FI20115073A0 - Laitteisto, menetelmä ja reaktiokammio - Google Patents

Laitteisto, menetelmä ja reaktiokammio

Info

Publication number
FI20115073A0
FI20115073A0 FI20115073A FI20115073A FI20115073A0 FI 20115073 A0 FI20115073 A0 FI 20115073A0 FI 20115073 A FI20115073 A FI 20115073A FI 20115073 A FI20115073 A FI 20115073A FI 20115073 A0 FI20115073 A0 FI 20115073A0
Authority
FI
Finland
Prior art keywords
procedure
reaction chamber
chamber
reaction
Prior art date
Application number
FI20115073A
Other languages
English (en)
Swedish (sv)
Inventor
Mikko Soederlund
Pekka Soininen
Jarmo Maula
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Priority to FI20115073A priority Critical patent/FI20115073A0/fi
Publication of FI20115073A0 publication Critical patent/FI20115073A0/fi
Priority to US13/991,977 priority patent/US10167551B2/en
Priority to DE112012000579T priority patent/DE112012000579T5/de
Priority to PCT/FI2012/050061 priority patent/WO2012101326A1/en
Priority to CN201280004806.7A priority patent/CN103298974B/zh
Priority to TW101102786A priority patent/TWI573183B/zh
Priority to US16/201,714 priority patent/US10590536B2/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
FI20115073A 2011-01-26 2011-01-26 Laitteisto, menetelmä ja reaktiokammio FI20115073A0 (fi)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FI20115073A FI20115073A0 (fi) 2011-01-26 2011-01-26 Laitteisto, menetelmä ja reaktiokammio
US13/991,977 US10167551B2 (en) 2011-01-26 2012-01-24 Apparatus, method and reaction chamber
DE112012000579T DE112012000579T5 (de) 2011-01-26 2012-01-24 Anlage, Verfahren und Reaktionskammer
PCT/FI2012/050061 WO2012101326A1 (en) 2011-01-26 2012-01-24 Apparatus, method and reaction chamber
CN201280004806.7A CN103298974B (zh) 2011-01-26 2012-01-24 装置、方法以及反应腔室
TW101102786A TWI573183B (zh) 2011-01-26 2012-01-30 處理基板表面之裝置、將基板載入用以處理基板表面之裝置之方法及反應腔室
US16/201,714 US10590536B2 (en) 2011-01-26 2018-11-27 Apparatus, method and reaction chamber

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20115073A FI20115073A0 (fi) 2011-01-26 2011-01-26 Laitteisto, menetelmä ja reaktiokammio

Publications (1)

Publication Number Publication Date
FI20115073A0 true FI20115073A0 (fi) 2011-01-26

Family

ID=43528559

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20115073A FI20115073A0 (fi) 2011-01-26 2011-01-26 Laitteisto, menetelmä ja reaktiokammio

Country Status (6)

Country Link
US (2) US10167551B2 (fi)
CN (1) CN103298974B (fi)
DE (1) DE112012000579T5 (fi)
FI (1) FI20115073A0 (fi)
TW (1) TWI573183B (fi)
WO (1) WO2012101326A1 (fi)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104201294B (zh) * 2014-07-10 2016-10-05 深圳市华星光电技术有限公司 一种操作平台
US20190032212A1 (en) * 2016-02-10 2019-01-31 Beneq Oy An apparatus for atomic layer deposition
US20210162037A1 (en) 2016-05-04 2021-06-03 Curevac Ag Influenza mrna vaccines
TWI650889B (zh) * 2016-07-22 2019-02-11 南韓商Ｎｃｄ股份有限公司 在ｏｌｅｄ上形成無機薄層的方法
FI129502B (fi) * 2019-04-25 2022-03-31 Beneq Oy Lähtöaineen syöttökaappi
CN110195216A (zh) * 2019-07-15 2019-09-03 浙江祺跃科技有限公司 一种原子层沉积设备
CN113564564B (zh) * 2021-07-02 2022-10-21 华中科技大学 原子层沉积装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6174377B1 (en) * 1997-03-03 2001-01-16 Genus, Inc. Processing chamber for atomic layer deposition processes
JP3367421B2 (ja) 1998-04-16 2003-01-14 東京エレクトロン株式会社 被処理体の収納装置及び搬出入ステージ
JP2001291655A (ja) * 2000-04-07 2001-10-19 Tokyo Electron Ltd 疎水化処理の評価方法、レジストパターンの形成方法及びレジストパターン形成システム
DE10161469A1 (de) 2001-12-13 2003-07-03 Schott Glas Volumenoptimierter Reaktor zur beidseitig gleichzeitigen Beschichtung von Brillengläsern
US6916374B2 (en) 2002-10-08 2005-07-12 Micron Technology, Inc. Atomic layer deposition methods and atomic layer deposition tools
FI119478B (fi) * 2005-04-22 2008-11-28 Beneq Oy Reaktori
GB0510051D0 (en) * 2005-05-17 2005-06-22 Forticrete Ltd Interlocking roof tiles
JP2008192642A (ja) 2007-01-31 2008-08-21 Tokyo Electron Ltd 基板処理装置
US20080202419A1 (en) 2007-02-27 2008-08-28 Smith John M Gas manifold directly attached to substrate processing chamber
EP2011898B1 (en) * 2007-07-03 2021-04-07 Beneq Oy Method in depositing metal oxide materials
US7897525B2 (en) 2008-12-31 2011-03-01 Archers Inc. Methods and systems of transferring, docking and processing substrates
FI123539B (fi) * 2009-02-09 2013-06-28 Beneq Oy ALD-reaktori, menetelmä ALD-reaktorin lataamiseksi ja tuotantolinja
FI122940B (fi) 2009-02-09 2012-09-14 Beneq Oy Reaktiokammio
FI123487B (fi) 2009-06-15 2013-05-31 Beneq Oy Laitteisto atomikerroskasvatuksen suorittamiseksi substraatin pinnalle

Also Published As

Publication number Publication date
US20190127850A1 (en) 2019-05-02
TW201241893A (en) 2012-10-16
US20130269608A1 (en) 2013-10-17
CN103298974A (zh) 2013-09-11
US10590536B2 (en) 2020-03-17
CN103298974B (zh) 2015-06-10
DE112012000579T5 (de) 2013-11-21
US10167551B2 (en) 2019-01-01
WO2012101326A1 (en) 2012-08-02
TWI573183B (zh) 2017-03-01

Similar Documents

Publication Publication Date Title
SMT201600292B (it) Apparecchio per produrre radicali idrossile
BR112013029511A2 (pt) método de tratamento de gás de síntese
DK2905062T3 (da) Apparat til behandling af udstødningsgas
DK2934836T3 (da) Splitting apparatus
BR112013033167A2 (pt) método, e, aparelho
IT1403981B1 (it) Apparato di taglio
BR112013028879A2 (pt) aparelho de filtragem
BR112014012552A2 (pt) aparelho, e método
FI20115073A0 (fi) Laitteisto, menetelmä ja reaktiokammio
BR112013024934A2 (pt) aparelho de geração de 1-metilciclopropeno
BR112014011709A2 (pt) método, e aparelho
BR112014006670A2 (pt) aparelho, e método
BR112014010797A2 (pt) aparelho de ionização
CO6980642A2 (es) Reformador transportable
DK2701707T3 (da) Fremgangsmåde til behandling af dyskinesi
DK3284479T3 (da) Fremgangsmåde til fremstilling af medikamenter til bekæmpelse af tumorer
DK2809343T3 (da) Fremgangsmåde til fermentering
BR112013033026A2 (pt) método, e aparelho
DK2609859T3 (da) Røntgenapparat
DK2476534T3 (da) Fremgangsmåde til formning
IT1402066B1 (it) Apparato di formatura
IT1403733B1 (it) Apparato per l'essiccazione di gas.
BR112013029496A2 (pt) câmara de biorreator
FI20115631A0 (fi) Immunostimulatoriset yhdisteet ja niiden käyttö
BR112014005073A2 (pt) método, e, aparelho

Legal Events

Date Code Title Description
FD Application lapsed