WO2008117798A1 - 窒化珪素膜の形成方法、不揮発性半導体メモリ装置の製造方法、不揮発性半導体メモリ装置およびプラズマ処理装置 - Google Patents

窒化珪素膜の形成方法、不揮発性半導体メモリ装置の製造方法、不揮発性半導体メモリ装置およびプラズマ処理装置 Download PDF

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WO2008117798A1
WO2008117798A1 PCT/JP2008/055569 JP2008055569W WO2008117798A1 WO 2008117798 A1 WO2008117798 A1 WO 2008117798A1 JP 2008055569 W JP2008055569 W JP 2008055569W WO 2008117798 A1 WO2008117798 A1 WO 2008117798A1
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WIPO (PCT)
Prior art keywords
memory device
semiconductor memory
nonvolatile semiconductor
processing apparatus
nitride film
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PCT/JP2008/055569
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English (en)
French (fr)
Inventor
Masayuki Kohno
Tatsuo Nishita
Toshio Nakanishi
Yoshihiro Hirota
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Tokyo Electron Limited
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Priority to CN2008800101787A priority Critical patent/CN101652843B/zh
Priority to JP2009506343A priority patent/JPWO2008117798A1/ja
Priority to US12/532,743 priority patent/US8318614B2/en
Publication of WO2008117798A1 publication Critical patent/WO2008117798A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/318—Inorganic layers composed of nitrides
    • H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Non-Volatile Memory (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)

Abstract

複数の孔を有する平面アンテナ３１によりチャンバー１内にマイクロ波を導入するプラズマ処理装置１００を用い、チャンバー１内に窒素含有化合物と珪素含有化合物とを含む原料ガスを導入してマイクロ波によりプラズマを発生させ、該プラズマにより被処理体の表面に窒化珪素膜を堆積させる。このプラズマＣＶＤ工程の条件を調節することによって、窒化珪素膜のトラップ密度の大きさを制御する。
PCT/JP2008/055569 2007-03-26 2008-03-25 窒化珪素膜の形成方法、不揮発性半導体メモリ装置の製造方法、不揮発性半導体メモリ装置およびプラズマ処理装置 WO2008117798A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008800101787A CN101652843B (zh) 2007-03-26 2008-03-25 氮化硅膜的形成方法、非易失性半导体存储装置的制造方法、非易失性半导体存储装置和等离子体处理装置
JP2009506343A JPWO2008117798A1 (ja) 2007-03-26 2008-03-25 窒化珪素膜の形成方法、不揮発性半導体メモリ装置の製造方法、不揮発性半導体メモリ装置およびプラズマ処理装置
US12/532,743 US8318614B2 (en) 2007-03-26 2008-03-25 Method for forming silicon nitride film, method for manufacturing nonvolatile semiconductor memory device, nonvolatile semiconductor memory device and plasma apparatus

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007079851 2007-03-26
JP2007-079851 2007-03-26
JP2007254272 2007-09-28
JP2007-254272 2007-09-28

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US (1) US8318614B2 (ja)
JP (1) JPWO2008117798A1 (ja)
KR (1) KR20100014557A (ja)
CN (1) CN101652843B (ja)
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WO (1) WO2008117798A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009123335A1 (ja) * 2008-03-31 2009-10-08 東京エレクトロン株式会社 Ｍｏｓ型半導体メモリ装置の製造方法およびプラズマｃｖｄ装置
JP2011508434A (ja) * 2007-12-21 2011-03-10 アプライド マテリアルズ インコーポレイテッド 低ウェットエッチング速度の窒化シリコン膜
JP2012506640A (ja) * 2008-10-21 2012-03-15 アプライド マテリアルズ インコーポレイテッド 窒化シリコン電荷トラップ層を有する不揮発性メモリ
JP2014067909A (ja) * 2012-09-26 2014-04-17 Toshiba Corp 半導体装置
JP2015512567A (ja) * 2012-03-29 2015-04-27 サイプレス セミコンダクター コーポレーション ロジックｃｍｏｓフローへのｏｎｏ統合の方法
JP2015517211A (ja) * 2012-03-27 2015-06-18 サイプレス セミコンダクター コーポレーション 分割窒化物メモリ層を有するｓｏｎｏｓ積層体

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TW200511430A (en) * 2003-05-29 2005-03-16 Tokyo Electron Ltd Plasma processing apparatus and plasma processing method
JP5261291B2 (ja) * 2009-06-01 2013-08-14 東京エレクトロン株式会社 処理方法および記憶媒体
JP5473962B2 (ja) 2011-02-22 2014-04-16 東京エレクトロン株式会社 パターン形成方法及び半導体装置の製造方法
US9157730B2 (en) 2012-10-26 2015-10-13 Applied Materials, Inc. PECVD process
JP6742165B2 (ja) * 2016-06-14 2020-08-19 東京エレクトロン株式会社 窒化珪素膜の処理方法および窒化珪素膜の形成方法
CN106449682B (zh) * 2016-10-10 2019-04-05 上海华力微电子有限公司 一种降低背照式cmos图像传感器白像素的方法
US10312475B2 (en) * 2017-05-15 2019-06-04 Applied Materials, Inc. CVD thin film stress control method for display application
CN108417481B (zh) * 2018-03-22 2021-02-23 京东方科技集团股份有限公司 氮化硅介电层的处理方法、薄膜晶体管和显示装置

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JP2004247581A (ja) * 2003-02-14 2004-09-02 Sony Corp 不揮発性半導体記録装置およびその製造方法
JP2005354041A (ja) * 2004-05-11 2005-12-22 Tokyo Electron Ltd 基板の処理方法及び電子装置
JP2006196643A (ja) * 2005-01-13 2006-07-27 Renesas Technology Corp 不揮発性半導体記憶装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011508434A (ja) * 2007-12-21 2011-03-10 アプライド マテリアルズ インコーポレイテッド 低ウェットエッチング速度の窒化シリコン膜
WO2009123335A1 (ja) * 2008-03-31 2009-10-08 東京エレクトロン株式会社 Ｍｏｓ型半導体メモリ装置の製造方法およびプラズマｃｖｄ装置
JP2012506640A (ja) * 2008-10-21 2012-03-15 アプライド マテリアルズ インコーポレイテッド 窒化シリコン電荷トラップ層を有する不揮発性メモリ
JP2015517211A (ja) * 2012-03-27 2015-06-18 サイプレス セミコンダクター コーポレーション 分割窒化物メモリ層を有するｓｏｎｏｓ積層体
JP2015512567A (ja) * 2012-03-29 2015-04-27 サイプレス セミコンダクター コーポレーション ロジックｃｍｏｓフローへのｏｎｏ統合の方法
JP2014067909A (ja) * 2012-09-26 2014-04-17 Toshiba Corp 半導体装置
US9178052B2 (en) 2012-09-26 2015-11-03 Kabushiki Kaisha Toshiba Semiconductor device
US9741798B2 (en) 2012-09-26 2017-08-22 Kabushiki Kaisha Toshiba Semiconductor device

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TW200903643A (en) 2009-01-16
CN101652843B (zh) 2011-07-20
US20100052040A1 (en) 2010-03-04
JPWO2008117798A1 (ja) 2010-07-15
KR20100014557A (ko) 2010-02-10
US8318614B2 (en) 2012-11-27
CN101652843A (zh) 2010-02-17

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