SE0900641L - Förfarande för framställning av halvledaranordning - Google Patents

Förfarande för framställning av halvledaranordning

Info

Publication number
SE0900641L
SE0900641L SE0900641A SE0900641A SE0900641L SE 0900641 L SE0900641 L SE 0900641L SE 0900641 A SE0900641 A SE 0900641A SE 0900641 A SE0900641 A SE 0900641A SE 0900641 L SE0900641 L SE 0900641L
Authority
SE
Sweden
Prior art keywords
impurity
stage
type channel
channel layer
layer
Prior art date
Application number
SE0900641A
Other languages
English (en)
Other versions
SE533083C2 (sv
Inventor
Rajesh Kumar Malhan
Adolf Schoener
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Publication of SE0900641L publication Critical patent/SE0900641L/sv
Publication of SE533083C2 publication Critical patent/SE533083C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/40—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/203—
    • H01L21/2033—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Drying Of Semiconductors (AREA)
SE0900641A 2008-05-13 2009-05-12 Förfarande för framställning av halvledaranordning SE533083C2 (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008125683A JP2009277757A (ja) 2008-05-13 2008-05-13 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
SE0900641L true SE0900641L (sv) 2009-11-14
SE533083C2 SE533083C2 (sv) 2010-06-22

Family

ID=41416046

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0900641A SE533083C2 (sv) 2008-05-13 2009-05-12 Förfarande för framställning av halvledaranordning

Country Status (2)

Country Link
JP (1) JP2009277757A (sv)
SE (1) SE533083C2 (sv)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102057078B (zh) * 2008-06-04 2015-04-01 陶氏康宁公司 降低半导体外延内记忆效应的方法
JP5698043B2 (ja) * 2010-08-04 2015-04-08 株式会社ニューフレアテクノロジー 半導体製造装置
JP2013201190A (ja) 2012-03-23 2013-10-03 Toshiba Corp 接合形電界効果トランジスタ及びその製造方法
JP6541257B2 (ja) * 2015-06-22 2019-07-10 昭和電工株式会社 炭化珪素膜の成膜装置のクリーニング方法
JP6547444B2 (ja) * 2015-06-24 2019-07-24 株式会社デンソー 炭化珪素半導体のエピタキシャル成長方法
JP2017165615A (ja) * 2016-03-16 2017-09-21 住友電気工業株式会社 炭化珪素のエピタキシャル成長装置
JP6786939B2 (ja) * 2016-08-05 2020-11-18 富士電機株式会社 炭化珪素半導体基板および炭化珪素半導体基板の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0258325A (ja) * 1988-08-24 1990-02-27 Matsushita Electric Ind Co Ltd 半導体薄膜気相成長装置
JP3070309B2 (ja) * 1992-12-07 2000-07-31 富士電機株式会社 薄膜太陽電池の製造方法
JP3624963B2 (ja) * 1995-01-27 2005-03-02 川崎マイクロエレクトロニクス株式会社 成膜装置のクリーニング方法
JP2802747B2 (ja) * 1996-02-23 1998-09-24 株式会社半導体エネルギー研究所 プラズマ処理方法
JP3603598B2 (ja) * 1997-08-04 2004-12-22 住友化学株式会社 ３−５族化合物半導体の製造方法
JP4487655B2 (ja) * 2004-04-14 2010-06-23 株式会社デンソー 半導体装置の製造方法
ITMI20041677A1 (it) * 2004-08-30 2004-11-30 E T C Epitaxial Technology Ct Processo di pulitura e processo operativo per un reattore cvd.

Also Published As

Publication number Publication date
JP2009277757A (ja) 2009-11-26
SE533083C2 (sv) 2010-06-22

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