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Application filed by Taiwan Semiconductor Mfg Co LtdfiledCriticalTaiwan Semiconductor Mfg Co Ltd
Priority to TW92123693ApriorityCriticalpatent/TWI223351B/en
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Publication of TW200509245ApublicationCriticalpatent/TW200509245A/en
A method for discharging wafer after dry etching metal layer. First, a substrate with patterned metal layer is provided, and. the surface of the patterned metal layer is covered with a patterned photoresist layer. Next, a dry etching is performed for stripping the patterned photoresist layer, and a vapor gas of H20 without providing RF power (RF POWER =0 ) is introduced for discharging remained charges which is produced both from forming the patterned metal layer and from dry etching the patterned photoresist layer.
TW92123693A2003-08-282003-08-28Method for discharging wafer after dry etching metal layer
TWI223351B
(en)