TWI223351B - Method for discharging wafer after dry etching metal layer - Google Patents

Abstract

A method for discharging wafer after dry etching metal layer. First, a substrate with patterned metal layer is provided, and the surface of the patterned metal layer is covered with a patterned photoresist layer. Next, a dry etching is performed for stripping the patterned photoresist layer, and a vapor gas of H2O without providing RF power (RF POWER=0) is introduced for discharging remained charges which is produced both from forming the patterned metal layer and from dry etching the patterned photoresist layer.

Description

1223351 V. Description of the invention (1) Technical field of the invention The present invention relates to a method for releasing residual charges on a wafer, and in particular to a method for releasing residual charges on a wafer after dry etching a metal layer. The definition of the previous project is completed (~ the ion bombardment wall is used in the process (positive electrical polymerization needs to use the trade name), and the anode with the metallic effect is cleared ac anode: technically speaking, and later i ns Itup, it is first removed by plasma bombardment, but the polymerization residual charge is 40, and if it is left down, it is more difficult to leave only a cleaning solution (the solution is connected to the upper layer of the wafer). The effect of the washing step is on): Ψ + 80H-- In the current semiconductor process, etching the metal layer to complete the removal of the photoresist pattern can be done in the same process cavity.) As shown in Figures 1A to 1B, in this electrical beam engraving method 1 5 # 刻The gold-metal layer 2Q ~, 3 5 on the substrate Γ 光 is a photoresist pattern 3 0 so that the photoresist pattern 30 is high energy. After the above process, it is easy to place polymer residues 60 and charges on the metal layer side. The accumulated charge 50) affects the progress of subsequent processes. When performing the ashing step, only the photoresist can be removed and the above will be removed. Therefore, traditionally, after the ashing step, for example, ACT9 3 5 (ACT is the manufacturer's name) or EKC (the factory performs a cleaning step to remove the polymerization residues, but accumulates the charge remaining due to the electropolymerization process, which makes tungsten insert The plug will be subject to "charging effect" (charging and ionized) and after the removal of polymerization residues, a Galvanic reaction with the cleaning solution (G a 1 vanic ---------> W 042- + 4 M + 6e— 1 if IS 1111 I iiliilil i II 1 IHilif 1 〇503-9547TWf (Nl); TSMC2002-1103; david.ptd Page 6 1223351 V. Description of the invention (2) Cathode: 5 02 + 3 H2 0 + 6 e _---- > 6 Ο H ~ Galvanic reaction: W + + 40H —---- > W02 + 4e ~ + 2H20

As a result, the plug was cut off by the invaded I insect, resulting in a disconnection (as indicated by symbol 65 in Figure 2). This phenomenon was also mentioned in the relevant literature at the 3rd International Symposium on Plasma Process-Induced Damage conference in 1998- The Corrosion of Tungsten Due to Plasma Charging in a Metal Plasma Etcher ° The current method to solve the corrosion problem of tungsten plugs is disclosed in U.S. Patent No. 6,387,7 23 Utilizing inert gas rich in nitrogen at low pressure To perform a discharge process on the wafer to remove the accumulated charge on the wafer, or to immerse the tungsten plug in a low pH solution, such as diluted nitric acid (n 丨 tf ^ ac id) Passivation 'or using an electron beam to discharge a metal structure with this tungsten plug. & Can't provide sufficient and stable. However, the above-mentioned discharge procedure is still sufficient and stable reliability in actual manufacturing process', so it is necessary to continue to develop more discharge methods. SUMMARY OF THE INVENTION Therefore, the main object of the present invention is to provide a method for wafer discharge after a layer. After dry-etching a metal layer, engraving, an appropriate amount of high-temperature water is filled under radio frequency power (RF POWER). === The charge remaining on the wafer due to the plasma process. ..., L 1 person releases 1

1223351

Wafer discharge method, by passing an appropriate amount of high-temperature water gas in the process of removing the photoresist pattern and the polymerization residue, thereby enabling the three processes of removing the photoresist pattern, removing the polymerization residue and releasing the wafer charge Completed in the same process cavity at a time 'reduces process time and improves production efficiency.

According to the above object, the present invention provides a wafer discharge method for dry etching a metal behind. First, a substrate with a patterned metal layer is provided, and the surface of the patterned metal layer is covered with a patterned photoresist layer. Then, the patterned photoresist layer is removed by dry etching, and then water vapor is passed in at a radio frequency power of zero to release the patterned metal layer and the patterned photoresist layer remaining on the substrate—by dry etching Of its charge. ., Eh? : The other purposes and many advantages will be fully disclosed by the evaluation of the following preferred embodiments, Tian Mingming, and with reference to the attached drawings. Embodiments Some embodiments of the present invention will be described in detail as follows, in which-different parts are not drawn according to actual dimensions. Certain scales and basins: Related rulers? It is more exaggerated to provide a clearer description; those skilled in the art understand the present invention. At the same time, the preferred embodiment is not intended to limit the scope of patent application of the present invention / = = 2

Equivalent alterations made without departing from the spirit disclosed by the present invention should be included in the scope of patent application described below. / > 1 Example Schematic diagram and Figure 4 with lower layer of metal Please refer to the flow chart of the process cross section of Figures 3A to 3D at the same time. As shown in FIG. 3A, first, a

1223351

The semiconductor substrate 100 of the layer 110 (S300), and the material of the lower metal layer 110 is, for example, aluminum, copper, or a combination of the foregoing. Here, it is an aluminum-copper alloy. The semiconductor and the substrate 100 are, for example, a silicon substrate. A metal interlayer dielectric layer is formed on the lower metal layer 1 10. The preferred structure of the metal interlayer dielectric layer 12 is a fluorosilicone glass layer (HDP-FSG) deposited by a high-degree plasma method. ) 、 Enhanced plasma method 1 @ Jizhill silica glass layer (PE-FSG) and stacked plasma layer deposited by enhanced plasma method without exchange oxide layer (PE-USG), other materials can also be : Such as tetraethoxysilane (TEOS). 'To form a plug 140 electrically connecting the upper and lower metallized layers 110 and Γ30 in the metal interlayer dielectric layer 120. The material is, for example, aluminum, copper, tungsten back, titanium nitrogen, or a combination of the foregoing. This is tungsten. Next, an upper layer 6 of the metal layer 130 is deposited on the interlayer dielectric layer 120. The material is, for example, aluminum or an aluminum alloy, here is an aluminum alloy, and a patterned photoresist layer 15 is formed on the upper layer of the metal. Layer 1 3 0. The substrate containing the above structure is placed in an etching machine, such as a RIE machine, and an etching step is performed. The patterned photoresist layer 150 is used as the second mask to etch the upper metal layer 130 to obtain a pattern.上层 金 层 130。 The upper layer of gold 130.

Next, first pass in DI water for about 5 ~ 60 seconds to make the plasma etching system reach a stable state, which is 30 seconds; the process force is about 3 Torr, here is 2 Torr; RF power is zero, process temperature is about 20 0 ~ 300 ° C, here is 25 (TC; water vapor flow is about 5 50 ~ cm3 / min, here is 6 50 cm3 / Then, seeing Figure 3B, Mai performed a first-plasma dry etching process 9 ((S310)) to remove the patterned photoresist layer 150. The etching source was water vapor,

1223351 V. Description of the invention (5) Oxygen, high-purity nitrogen, or a combination thereof, which is a combination of nitrogen: water vapor: oxygen; the ratio is 1: 1; 4: 16; the flow rate here is about 200 cubic meters Cm / min: 300 cm3 / min: 3500 cm3 / min, the ratios are about 1: 1 · 5: 17; the time is about 15 seconds; the process pressure is about 1 ~ 3 Torr 'here is 2 Torr; RF power is about 1,000 watts to 2,000 watts, here is 1400 watts; process temperature is about 2,000. 〇3〇〇. (:, Here is 250 ° C. 〇〇 (^ 313Λ 图 Λshows' Next, a second plasma drying 1 insect engraving process 200 (S310) to remove the adhesion to the 180, etching source is water Vapor, the process pressure of the polymer residue on the limb base 100 of Japan is about l · ~ 3 · Tor, here is about 5 ~ 30 seconds, here is 20 seconds; ~ 200,000 watts, Here it is 400 watts · Torr; RF power is about 1000 watts and this is 25 (TC; water vapor flow range temperature is about 20000. 0300. 00, in minutes / minutes, at This is 6 50 cubic meters, 850 cubic meters per minute to 7,50 cubic meters and the second plasma etching process, here knife / minute. Then repeat the first engraving process S3 2 0 several times. Next, as shown in Figure 3 D As shown in the figure, the electrical program S3 30 is performed by repeatedly applying the first and second plasma etching to the semiconductor substrate 100 without repeatedly applying water vapor 21 to release the RF power (RF P0WER). = 〇) on the semiconductor substrate 100 ℃ under the electro-etching process described above and left in it, the flow of water vapor is about 160 charges, 17), in minutes, here is 65 0 cubic meters; square Cm / min ~ 750 mcm / value, does not change with the access time t = minutes; the process pressure is a fixed ~ 3 0 0 ° c, here is 2 7 0 ° c

The process temperature is also a fixed value, not ρ 'Έ 1 ~ 3 Torr, here it is 2 Torr; the system ΠΠ Π 〇r such as i 4 varies depending on the access time, about 2 0 〇C & outside 'Visual processes require additional reopening

0503-9547TWf (Nl); TSMC2002-1103; david.ptd 10th

Page 1223351 V. Description of the invention (6) Inject a high-purity nitrogen (N 2-S) S 3 4 0 for about 5 seconds, the flow rate is about 200 cm 3 / min, the RF power is zero, and the process temperature is about 2 5 0 t: and cooperate with an extraction step S 340 to further remove the residual substances and suspended particles generated in the above process. In order to prove that the method of the present invention is indeed effective, a circuit pattern with 800,000 plugs (via, abbreviated as Rc0_8 0 0k) is specially designed. If any of the plugs pass through a weak alkaline solution (in this system When EKC (manufacturer's name) solution is used for immersion, a galvanic reaction with a weak alkaline solution occurs due to incomplete charge release, and an open circuit occurs due to erosion, the resistance value of rc0_8 0 0 k will be 1 diamond. High (> 1 5 ohm). Figures 5A (a) and 5 A (b) show that the Rc0_80 Ok measured at 15 ohms (abscissa) after the dry etching process is used to remove the photoresist layer and the polymerization residue, and then treated with the EKC solution. ) The percentage is still 95% to 97%, that is, about 3% to 5% still has an Rc value greater than 15 ohms. Figures 5B (a) and 5B (b) are after the wafer discharge method of the present invention for dry-etching a metal layer is used, and then treated with an EKC solution. The Rc0_80 Ok measured at 15 ohms The percentage is 100%, that is, the resistance value of none of the 10,000 plugs exceeds 15 ohms. It can be seen from the above that the present invention can completely discharge the wafer, and avoids the problem of resistance increase caused by the Galvanic reaction in the subsequent processing of the EKC solution. FIG. 6 is a comparison chart of the conventional dry etching process and the RC0_80 0K failure rate of the present invention. It can be seen from the figure that when the conventional process is adopted, the curve of the rc0_00 00K failure rate fluctuates up and down and is very unstable. However, after using the present invention (6 0 1), R c 0-8 0 The 0 K failure rate drops to 0%, where the abscissa

0503-9547TWf (Nl) * TSMC2002-1103; david.ptd Page 11 1223351 V. Description of the invention (7) (W239) R c 0 __ 8 Ο Ο K Losbei 1 Figures 7A ~ 7C {Deviation ( In the standard, the standard of knowledge, the standard of knowledge, the standard of the present invention can be used in the manufacturing process. Although the present invention defines the present invention, the spirit and scope of the scope of the present invention should be changed to the point of reference. (602), so its measurement rate is increased again. It is a comparison chart of the conventional standard process and the yield rate and standard dev ^ Uon (STDEV) of the present invention. In the figure, the partial production value is 2.09, and the present invention is 1.61; Figure 7B == :. 74 ′ The invention is 102; in the first flat difference value is 171, Shi &. The melon is 1.03, which proves that the degree of sin is true and η, and that it has a good ability to improve. It has been disclosed as above with a better example, but it is not used. (However, he knows this technology m, and he can make changes to the door without departing from the scope of the invention.) The protection of the invention depends on the definition of the solid. 1223351 Brief description of the drawings 1A ~ 1B are schematic cross-sectional diagrams showing the conventional metal etching process; Figure 2 is an electron microscope diagram showing the structure of the conventional metal wire; Figures 3A to 3D are schematic cross-sectional diagrams showing the manufacturing process of the embodiment of the present invention. Figure 4 is a schematic diagram of the process flow of the embodiment of the present invention; Figures 5A to 5B are RcO showing the embodiment of the present invention to verify- 8 0K test resistance vs. percentage diagram; Figure 6 is a graph showing the relationship between the RcO_80 0K test failure rate of the present invention and the conventional process; and Figures 7 A to 7C are the standard process and the present invention of the conventional process Comparison of yield and standard deviation (STDEV). Symbol Description 15 Plasma Etching; 30 Photoresist Pattern; 40 Positive Charge; 60 Polymer Residue; 100 Semiconductor Substrate; 120 Interlayer Dielectric Layer; 140 plugs; 1 60 positive charge; 1 8 polymer residue; 2 0 second plasma etching process; 10 substrates; 2 metal layers; 3 5 plasma bombardment; 5 0 negative charges; 6 5 plugs being invaded by money ; Patterned metal layer below 110; patterned metal layer above 130; patterned photoresist layer of 150; negative charge of 170; first plasma etching process of 190;

0503-9547TWf (Nl); TSMC2002-1103; david.ptd Page 13 1223351 Brief description of the diagram 210 Water vapor is passed in without RF power (RF POWER = 0) 6 0 1 Water vapor is passed in to bake; 6 0 2 steamless baking; S300 provides a substrate with a lower patterned metal layer; S 3 10 removes the patterned photoresist layer with a first plasma dry etching process, and removes the adhesion to the pattern with a second plasma dry etching process Polymerized residue on the metal layer and the substrate; S3 2 0 repeats the first and second plasma dry etching processes; S 3 3 0 passes a water vapor with zero RF power to perform the discharge process; S 3 4 0 Introduce nitrogen and carry out the plate gas step.

0503-9547TWf (Nl); TSMC2002-1103; david.ptd page 14

Claims (1)

1223351 VI. Application Patent Scope 1. A method for wafer discharge after dry etching a metal layer, including at least the following steps: providing a substrate with a metal layer; patterning the metal layer by dry etching; and RF power Water vapor was passed in below zero to release the charge remaining on the substrate. 2. The method for discharging a wafer after dry-etching a metal layer as described in item 1 of the scope of patent application, wherein the substrate is a silicon substrate. 3. The method for discharging a wafer after dry-etching a metal layer as described in item 1 of the scope of the patent application, wherein the material of the patterned metal layer is selected from the group consisting of copper, copper, or a combination thereof. 4. The method for discharging a wafer after dry etching a metal layer as described in item 1 of the scope of the patent application, wherein the step of passing in the water vapor and the step of removing the patterned photoresist layer by a dry etching method are The same (I n-situ) process. 5. The method for discharging a wafer after dry-etching a metal layer as described in item 1 of the scope of patent application, wherein the material of the water vapor is selected from pure water (DI water). The method for discharging a wafer after dry-etching a metal layer according to the item, wherein the time for passing in the water vapor is 1 second to 60 seconds. 7. The method for discharging a wafer after dry-etching a metal layer as described in item 1 of the scope of the patent application, wherein the process pressure when the water vapor is passed in is 1 Torr to 3 Torr. 0503-9547TWf (Nl); TSMC2002-1103; david.ptd Page 15 V 1223351 6. The scope of application for patents is that the process temperature when dry etching the metal layer after the gas treatment is 8. Use as described in item 1 of the scope of patent applications The wafer discharge method 'wherein the water is passed between 200 ° C and 300 ° C. 9. The method for discharging a wafer after dry-etching a metal layer as described in item 1 of the scope of the patent application, wherein the flow rate of the hydrazone is 550 cubic centimeters per minute (SCCM) to 75η * +…, cubic centimeters per minute . 1 〇—A method for wafer discharge after dry etching a metal layer, including at least the following steps: providing a substrate with a patterned metal layer, and the patterned metal layer surface is covered with a patterned photoresist layer; A plasma dry etching process is used to remove the patterned photoresist layer, and a second electro-drying process is used to remove the polymer residues attached to the patterned metal layer and the substrate; and / or a discharge is performed on the substrate. A program, injecting water vapor at a radio frequency power of zero to release the charges remaining on the substrate due to the first and second plasma etching processes. L · Electric Paddle Dry Etching Process and the 19th Jf ^ Used for 萆 6 Rice Carved Metallic Layers 1 2 · As described in the scope of the patent application, m 4 + + L I Wafer discharge, wafer rtr, ★ large βP 1 1 · After-use wafer discharge method as described in item 10 of the patent application scope, wherein the second plasma dry etching process is repeated alternately After several times, the yen and yen discharge method, in which the order of the plasma dry etching process can be interchanged, π # ~ W 7 1 soil grab +. For dry etching metal layer 13. As claimed in item 10 of the scope of patent application The process of wafer discharge is also engraved with the plasma discharge method after ΗϊτΛ * two rounds, 丄 ^% ^, where the first 0503-9547W (Nl); TSMC2002-1103; david.ptd Page 16 1223351 6. The scope of the patent application source is selected from the group consisting of water vapor (DI water), oxygen (O3), high-purity nitrogen (N2 ~ S) or the foregoing Of combination. 1 4 · The method for discharging a wafer after the metal layer is dried as described in item 10 of the scope of the patent application, wherein the flow ratio of nitrogen: water vapor: oxygen is 2 ~ 3: 3 ~ 4: 3 1 ~ 3 5. 15. The method for discharging a wafer after the metal layer is etched as described in item 10 of the scope of patent application, wherein the first plasma etching time is 5 seconds to 30 seconds. 16 · The method for crystal-tuning discharge after the metal layer is engraved as described in item 10 of the scope of patent application, wherein the pressure of the first electropolymer nick is 1 Torr to 3 Torr. 17 · The method for discharging a wafer after the metal layer is etched as described in item 10 of the scope of the patent application, wherein the RF power of the YH-Electro-etching is as described for the dry worm. The temperature of the metal layer_plasma etching is 1000 watts to 2000 watts. 18. If the wafer discharge method after item 10 of the scope of patent application is applied, the π-th plasma for dry etching of metal layers and plasma / plasma etching process is from 2000 ° C to 300 ° ° C. 19. The method for discharging a wafer after applying for item 10 of the patent scope, wherein the source is selected from DI water. It is used to dry etch the metal layer 20. The method for wafer discharge after 5 seconds of etching as described in item 10 of the patent application scope, wherein the > '' / to 30 seconds. It is used for dry surname Carved metal layer 2 1. If the scope of patent application for item 10 household catties $ 0503-9547TWf (Nl); TSMC2002-1103; david.ptd page 17 1223351 The plasma cutting pressure is 1 Torr 6. Application scope of patent The wafer discharge method of this second one, in which the ear is 3 Torr. ο ^ ^ used for dry etching of the metal layer 22. The method for subsequent wafer discharge as described in the scope of the patent application No. 丨 〇, wherein the radio frequency power of the plasma etching is 1,000 watts to 2 0 0 0 watts. 23. The method for discharging a wafer after wide metal: two metals Λ, as described in item i 0 of the scope of patent application, wherein the second plasma etching: wide eight milk flow is 55. Cubic centimeters per minute (sccm) to 75 millimeters. 24. According to the method for applying wafer discharge after ^ layer described in the scope of the patent application, the step of passing in the water vapor into the basin is performed together with the first and second plasma dry etching. (In-si tu ', 26. As described in item 10 of the scope of patent application, the method for wafer discharge after \' to the metal layer, wherein the time between the day when the water vapor is passed is 1 Seconds to 60 seconds. 27. The method for discharging a wafer after an insect-etched metal layer as described in item No. 丨 0 of the patent application scope, wherein the private pressure of the garment through which the water strip is inserted is 1 Torr (Torr) to 3 Torr. Person # 28. As described in item 10 of the scope of patent application, the wafer discharge method after the second c-etched metal layer, wherein the process temperature when the hydrotherapy gas is introduced is 2 0 0 ° C to 300 ° C. ^ 2 9 · Use as described in item 10 of the scope of patent application & 1 1 etched metal layer 25 · Use as described in the scope of patent application Wafer discharge method after H metal layer, wherein the material of the water and tea gas "& from pure water (DI water 0503-9547TWf (Nl); TSMC2002-1103; david.ptd Page 18 1223351 Six, the method of wafer discharge after patent application, wherein the flow of water vapor is 550 cubic centimeters per minute (SCCM) to 750 Cubic centimeters / minute. 3 0. A method for discharging a wafer after a dry-etched metal layer includes at least the following steps: Provide a substrate having a lower patterned metal layer, wherein a metal interlayer dielectric layer is formed on the lower patterned metal On the layer, an upper patterned metal layer is formed on the metal interlayer dielectric layer, a via passes through the metal interlayer dielectric layer to electrically connect the upper and lower patterned metal layers, and a patterned light A resist layer is on the upper patterned metal layer; the fraudulent photoresist layer is removed by a first electric dry etching process; and a second electric song dry etching process is used to remove the upper patterned metal layer and the substrate. Polymerized residues on the substrate; repeated the first and second plasma etching processes several times; and performing a discharge procedure on the substrate to pass water vapor at a radio frequency power of zero to release the remaining in the plasma etching process The charge on the substrate. 3 1 · The method for discharging a wafer after dry-etching a metal layer as described in item 30 of the scope of patent application, wherein the material of the lower and upper patterned metal layer is selected from the group consisting of Ming, copper, or the foregoing Of combination. 32. The method for discharging a wafer after dry-etching a metal layer as described in item 30 of the scope of patent application, wherein the material of the plug is selected from the group consisting of aluminum, copper, crane, or a combination thereof. 33. The method for discharging a wafer after dry-etching a metal layer as described in item 30 of the scope of patent application, wherein before performing the first plasma etching process 0503-9547TWf (Nl); TSMC2002-1103; david.ptd Page 19 1223351 Scope of patent application First, a water vapor is passed in, and the time is about 5 to 30 seconds to make the plasma etching system reach a stable state. 3 4 · The method for discharging a wafer after dry-etching a metal layer as described in item 33 of the scope of the patent application, wherein the process pressure when the water vapor is passed in is about 1 Torr to 3 Thing. … 3 5 · The method for discharging a wafer after the metal layer is etched as described in item 33 of the scope of the patent application, wherein the radio frequency power (RF POWER) used when the water vapor is passed is zero. 3 6 · The method for discharging a wafer after the metal layer is etched as described in item 33 of the scope of the patent application, wherein the process temperature on the day when the water vapor is applied is from 200 ° C to 3 0 0 ° C. 37. The method for discharging a wafer after dry-etching a metal layer as described in item 30 of the scope of the patent application, wherein the source of electropolymerization in the / dry etching process is selected from the group consisting of water (DI water). Carving a metal layer on the dry surface 38. The wafer discharge method after the time of the dry etching process as described in item 30 of the patent application scope, wherein the first electricity is 5 seconds to 3 G seconds, respectively. In the dry metal layer 39. The method for discharging the wafer after the pressure of the etching process as described in item 30 of the application for a patent, wherein the item ^^ # is used to dry etch the metal layer 40. If the application is for item 30 in the patent scope The wafer discharge method after the temperature of the dry etching process, wherein the first / electrical # are respectively 200 ° C to 300 ° C, and are respectively 1 Torr to 3 Torr. Dry etch metal layer 4 1 · As described in item 30 of the scope of patent application 0503-9547TWf (N1) i TSMC2002-1103; david.ptd Page 20 1223351 ——— * RF of plasma dry etching process VI. Wafer discharge method after patent application, where the first power is 1 0 0 watts to 2000 watts. # 细 方 丨 人 Η A 42. ^ ^ ^ ί, ® ^ 30 ^ ^ After the wafer discharge method, wherein the ζ plasma dry etching of the 7 gas flow rate is 5 0 cubic centimeters / 75 minutes per minute. 43. As described in item 30 of the scope of patent application, it is used for dry carving. The wafer discharge method after the metal layer, wherein the plasma source of the > plasma dry etching process is selected from water vapor, oxygen, high-purity nitrogen, or a combination thereof. 44. The method for discharging a wafer after dry-etching a metal layer as described in item 30 of the scope of application for a patent, wherein the > plasma dry etching process of nitrogen: water vapor, and the flow rate of oxygen is 2 to 3: 3 to 4 · 3 1 to 3 5. 4 5 · The method for discharging a wafer after dry etching a metal layer as described in item 30 of the scope of the patent application, wherein the time of the plasma dry etching process is 5 seconds to 30 seconds, respectively. 4 6 · The method for wafer discharge after dry etching a metal layer as described in item 30 of the scope of patent application, wherein the pressure of the plasma dry #etching process is 1 Torr (T 0rr) To 3 Torr. 4 7 · The method for discharging the wafer after the dry-etching metal layer as described in item 30 of the scope of patent application, wherein the temperature of the plasma plasma dry-etching process is between 200 ° C and 3 0 0 ° C. 4 8 · The method for discharging wafers after the metal layer is etched as described in item 30 of the scope of patent application, wherein the RF power of the plasma dry-etching process is 1 000 watts to 2 0 0 watts. 4 9 · Used for dry metal engraving as described in item 30 of the scope of patent application 0503-9547TWf (Nl); TSMC2002-1103; david.ptd Page 21 1223351 VI. Wafer discharge method after patent application, wherein the discharge procedure is the same as the first and second plasma dry etching Process. 50. The method for discharging a wafer after dry etching a metal layer as described in item 30 of the scope of the patent application, wherein the pressure of the discharge procedure is 1 Torr to 3 Torr. 51. The method for discharging a wafer after dry-etching a metal layer as described in item 30 of the scope of the patent application, wherein the temperature of the discharge procedure is 200 ° C to 300 ° C. 5 2. The method for crystal-circle discharge after dry-etching a metal layer as described in item 30 of the scope of patent application, wherein the first water vapor flow rate passed in the discharge procedure is 550 cm 3 / min. To 750 cubic centimeters per minute. 5 3 · The method for discharging a wafer after dry-etching a metal layer as described in item 30 of the scope of patent application, wherein a high-purity nitrogen gas is passed after the discharge process and a pumping step is performed to dry the above-mentioned dry layer. Residual materials and suspended particles in the etching plasma process are removed. 0503-9547TWf (Nl); TSMC2002-1103; david.ptd page 22