JP5185157B2 - フォトダイオードの製造方法及びフォトダイオード - Google Patents
フォトダイオードの製造方法及びフォトダイオード Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 139
- 239000012535 impurity Substances 0.000 claims description 122
- 239000000758 substrate Substances 0.000 claims description 95
- 230000001788 irregular Effects 0.000 claims description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 239000010703 silicon Substances 0.000 claims description 27
- 238000005530 etching Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 238000007493 shaping process Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 147
- 230000035945 sensitivity Effects 0.000 description 26
- 230000003595 spectral effect Effects 0.000 description 22
- 230000000052 comparative effect Effects 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 239000000969 carrier Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
Claims (8)
- 互いに対向する第1主面及び第2主面を有する半導体基板と、前記半導体基板の前記第2主面上に設けられた絶縁層と、前記絶縁層上に設けられた第1導電型の第1不純物領域と、前記第1不純物領域上に設けられていると共に前記第1不純物領域よりも不純物濃度が低い第1導電型の低濃度不純物領域と、を有するシリコン基板を準備する工程と、
前記低濃度不純物領域内に、第2導電型の不純物領域を含む光感応領域を形成する工程と、
前記第1不純物領域及び前記低濃度不純物領域をメサ状に整形することにより前記光感応領域を含み、光入射面とされる主面を有する半導体メサ部を形成する工程と、
前記低濃度不純物領域よりも高い不純物濃度を有する第1導電型の第2不純物領域を前記半導体メサ部の表面に形成すると共に前記低濃度不純物領域よりも高い不純物濃度を有する第1導電型の第3不純物領域を前記半導体メサ部の側面に形成し、前記第1不純物領域、前記第2不純物領域、及び前記第3不純物領域を電気的に接続させる工程と、
前記半導体基板における前記光感応領域に対応する部分を該部分の周辺部分を残して前記第1主面側から薄化する工程と、
前記シリコン基板の薄化されている部分に、前記第1主面側からパルスレーザ光を照射して、不規則な凹凸を前記シリコン基板における前記半導体メサ部の前記主面に対向する面に光学的に露出させて形成する工程と、
不規則な前記凹凸を形成する前記工程の後に、前記シリコン基板を熱処理する工程と、
前記シリコン基板を熱処理する工程の後に、前記光感応領域の前記不純物領域と電気的に接続するように前記半導体メサ部上に第1電極を形成すると共に、前記第2不純物領域と電気的に接続するように前記半導体メサ部上に第2電極を形成する工程と、を備え、
前記半導体メサ部の前記主面から入射した光が前記低濃度不純物領域内を進む、表面入射型のフォトダイオードを製造することを特徴とするフォトダイオードの製造方法。 - 不規則な前記凹凸を形成する前記工程では、パルスレーザ光としてピコ秒〜フェムト秒パルスレーザ光を照射することを特徴とする請求項1に記載のフォトダイオードの製造方法。
- 前記絶縁層が酸化シリコンからなり、
薄化する前記工程では、前記絶縁層をエッチングストップ層として前記半導体基板を前記第1主面側からエッチングすることを特徴とする請求項1又は2に記載のフォトダイオードの製造方法。 - 前記第1不純物領域の厚みを、不規則な前記凹凸の高低差よりも大きくすることを特徴とする請求項1〜3のいずれか一項に記載のフォトダイオードの製造方法。
- 互いに対向する第1主面及び第2主面を有する半導体基板と、前記半導体基板の第2主面上に設けられた絶縁層と、前記絶縁層上に設けられていると共に該絶縁層との接合面の反対側に形成された主面を有する半導体メサ部と、を有するシリコン基板部と、
前記半導体メサ部の前記主面上に設けられた第1電極及び第2電極と、を備え、
前記半導体メサ部は、
前記絶縁層との接合面に設けられた第1導電型の第1不純物領域と、
前記第1の不純物領域上に設けられており、前記第1不純物領域よりも不純物濃度が低い第1導電型の低濃度不純物領域と、
前記低濃度不純物領域内に設けられており、第2導電型の不純物領域を含む光感応領域と、
前記低濃度不純物領域内において前記半導体メサ部の前記主面に設けられており、前記低濃度不純物領域よりも不純物濃度が高い第1導電型の第2不純物領域と、
前記低濃度不純物領域内において前記半導体メサ部の側面に設けられており、前記低濃度不純物領域よりも不純物濃度が高い第1導電型の第3不純物領域と、を有し、
前記シリコン基板部は、前記光感応領域に対応する部分が該部分の周辺部分を残して前記半導体基板側より薄化され、
前記シリコン基板部の薄化されている部分における前記半導体メサ部の前記主面に対向する面には不規則な凹凸が形成されていると共に該面が光学的に露出しており、
前記第3不純物領域は、前記第1不純物領域及び前記第2不純物領域と電気的に接続され、
前記第1電極は、前記光感応領域の前記不純物領域と電気的に接続され、前記第2電極は、前記第2不純物領域と電気的に接続され、
前記半導体メサ部の前記主面が光入射面とされて、前記半導体メサ部の前記主面から入射した光が前記低濃度不純物領域内を進む、表面入射型であることを特徴とするフォトダイオード。 - 前記第1不純物領域に不規則な前記凹凸が形成されると共に前記第1不純物領域が光学的に露出していることを特徴とする請求項5に記載のフォトダイオード。
- 前記第1不純物領域の厚みが、不規則な前記凹凸の高低差よりも大きいことを特徴とする請求項5又は6に記載のフォトダイオード。
- 前記半導体メサ部の前記主面から入射し、前記低濃度不純物領域内を進む光が、不規則な前記凹凸により反射、散乱、又は拡散されることを特徴とする請求項5〜7のいずれか一項に記載のフォトダイオード。
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JP2009042352A JP5185157B2 (ja) | 2009-02-25 | 2009-02-25 | フォトダイオードの製造方法及びフォトダイオード |
US13/148,091 US8564087B2 (en) | 2009-02-25 | 2010-02-15 | Photodiode manufacturing method and photodiodes |
EP10746103.0A EP2403010B1 (en) | 2009-02-25 | 2010-02-15 | Photodiode |
PCT/JP2010/052205 WO2010098222A1 (ja) | 2009-02-25 | 2010-02-15 | フォトダイオードの製造方法及びフォトダイオード |
TW099105368A TWI466309B (zh) | 2009-02-25 | 2010-02-24 | Method for manufacturing photodiode and photodiode |
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EP2403010A4 (en) | 2014-01-15 |
EP2403010B1 (en) | 2016-05-25 |
TW201114055A (en) | 2011-04-16 |
EP2403010A1 (en) | 2012-01-04 |
US8564087B2 (en) | 2013-10-22 |
WO2010098222A1 (ja) | 2010-09-02 |
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