CN102400227B - 一种绒面黑硅材料的制备方法 - Google Patents
一种绒面黑硅材料的制备方法 Download PDFInfo
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- CN102400227B CN102400227B CN 201110146276 CN201110146276A CN102400227B CN 102400227 B CN102400227 B CN 102400227B CN 201110146276 CN201110146276 CN 201110146276 CN 201110146276 A CN201110146276 A CN 201110146276A CN 102400227 B CN102400227 B CN 102400227B
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- black silicon
- silicon chip
- film
- pile face
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- 229910021418 black silicon Inorganic materials 0.000 title claims abstract description 38
- 238000002360 preparation method Methods 0.000 title claims abstract description 38
- 239000002210 silicon-based material Substances 0.000 title claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 51
- 239000010703 silicon Substances 0.000 claims abstract description 51
- 239000004793 Polystyrene Substances 0.000 claims abstract description 37
- 229920002223 polystyrene Polymers 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000002245 particle Substances 0.000 claims abstract description 8
- 230000000737 periodic effect Effects 0.000 claims abstract description 5
- 238000001020 plasma etching Methods 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 8
- 238000007654 immersion Methods 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 4
- 239000011324 bead Substances 0.000 abstract 4
- 239000012528 membrane Substances 0.000 abstract 3
- 239000002356 single layer Substances 0.000 abstract 3
- 239000010410 layer Substances 0.000 abstract 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
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- Drying Of Semiconductors (AREA)
Abstract
Description
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN 201110146276 CN102400227B (zh) | 2011-11-22 | 2011-11-22 | 一种绒面黑硅材料的制备方法 |
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CN 201110146276 CN102400227B (zh) | 2011-11-22 | 2011-11-22 | 一种绒面黑硅材料的制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN102400227A CN102400227A (zh) | 2012-04-04 |
CN102400227B true CN102400227B (zh) | 2013-03-13 |
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CN 201110146276 Expired - Fee Related CN102400227B (zh) | 2011-11-22 | 2011-11-22 | 一种绒面黑硅材料的制备方法 |
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CN (1) | CN102400227B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109881250A (zh) * | 2014-05-09 | 2019-06-14 | 中国科学院宁波材料技术与工程研究所 | 一种单晶硅倒金字塔阵列结构绒面及其制备方法和应用 |
CN108381841A (zh) * | 2018-03-06 | 2018-08-10 | 中国工程物理研究院激光聚变研究中心 | 一种大尺寸超薄薄膜脱膜-捞膜装置及脱膜-捞膜的方法 |
CN110611013A (zh) * | 2019-09-17 | 2019-12-24 | 西北工业大学 | 在碲化锌表面制备亚波长微结构阵列的方法 |
CN113380605A (zh) * | 2021-06-04 | 2021-09-10 | 中国电子科技集团公司第四十四研究所 | 一种基于机械研磨辅助腐蚀的黑硅制作方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7057256B2 (en) * | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
US7442629B2 (en) * | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
EP1794804B1 (en) * | 2004-09-24 | 2010-09-01 | The President and Fellows of Harvard College | Method for manufacturing of silicon-based detectors having laser-microstructured surface layers having electron-donating constituents |
CN101824654B (zh) * | 2009-03-04 | 2012-04-11 | 中国科学院半导体研究所 | 一种制作黑硅材料的方法 |
CN101693519B (zh) * | 2009-10-21 | 2012-07-25 | 吉林大学 | 二氧化硅纳米锥阵列的制备方法 |
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- 2011-11-22 CN CN 201110146276 patent/CN102400227B/zh not_active Expired - Fee Related
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CN102400227A (zh) | 2012-04-04 |
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Correction item: Applicant name Correct: Shenzhen Kuang-Chi Institute of Advanced Technology Shenzhen Kuang-Chi Innovation Technology Co., Ltd. False: Shenzhen Kuang-Chi Innovation Technology Co., Ltd. Number: 14 Volume: 28 |
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Correction item: Applicant Correct: Shenzhen Kuang-Chi Institute of Advanced Technology Shenzhen Kuang-Chi Innovation Technology Co., Ltd. False: Shenzhen Kuang-Chi Innovation Technology Co., Ltd. Number: 14 Page: The title page Volume: 28 |
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Free format text: CORRECT: NAME OF APPLICANT; FROM: SHENZHEN KUANG-CHI INNOVATION TECHNOLOGY CO., LTD. TO: SHENZHEN KUANG-CHI INSTITUTE OF ADVANCED TECHNOLOGY SHENZHEN KUANG-CHI INNOVATION TECHNOLOGY CO., LTD. |
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Effective date of registration: 20201202 Address after: No.219 Yanjiang Road, Changjiang Town, Rugao City, Nantong City, Jiangsu Province Patentee after: Jiangsu Dingjie Medical Equipment Co.,Ltd. Address before: 518000, No. 9 software building, central high tech Zone, Nanshan District hi tech Zone, Guangdong, Shenzhen Patentee before: KUANG-CHI INSTITUTE OF ADVANCED TECHNOLOGY Patentee before: KUANG-CHI INNOVATIVE TECHNOLOGY Ltd. |
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Granted publication date: 20130313 |