ATE480009T1 - Verfahren zur herstellung von detektoren auf siliziumbasis mit lasermikrostrukturierten oberflächenschichten mit elektronendonatoren - Google Patents

Verfahren zur herstellung von detektoren auf siliziumbasis mit lasermikrostrukturierten oberflächenschichten mit elektronendonatoren

Info

Publication number
ATE480009T1
ATE480009T1 AT05856921T AT05856921T ATE480009T1 AT E480009 T1 ATE480009 T1 AT E480009T1 AT 05856921 T AT05856921 T AT 05856921T AT 05856921 T AT05856921 T AT 05856921T AT E480009 T1 ATE480009 T1 AT E480009T1
Authority
AT
Austria
Prior art keywords
electron
laser
substrate
surface layers
microstructured surface
Prior art date
Application number
AT05856921T
Other languages
English (en)
Inventor
Eric Mazur
James Carey
Original Assignee
Harvard College
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/950,248 external-priority patent/US7354792B2/en
Priority claimed from US10/950,230 external-priority patent/US7057256B2/en
Application filed by Harvard College filed Critical Harvard College
Application granted granted Critical
Publication of ATE480009T1 publication Critical patent/ATE480009T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Laser Beam Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Lasers (AREA)
  • Silicon Compounds (AREA)
  • Lasers (AREA)
AT05856921T 2004-09-24 2005-09-23 Verfahren zur herstellung von detektoren auf siliziumbasis mit lasermikrostrukturierten oberflächenschichten mit elektronendonatoren ATE480009T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/950,248 US7354792B2 (en) 2001-05-25 2004-09-24 Manufacture of silicon-based devices having disordered sulfur-doped surface layers
US10/950,230 US7057256B2 (en) 2001-05-25 2004-09-24 Silicon-based visible and near-infrared optoelectric devices
PCT/US2005/034180 WO2006086014A2 (en) 2004-09-24 2005-09-23 Method for manufacturing of silicon-based detektors having laser-microstructured sulfur-doped surface layers

Publications (1)

Publication Number Publication Date
ATE480009T1 true ATE480009T1 (de) 2010-09-15

Family

ID=36607386

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05856921T ATE480009T1 (de) 2004-09-24 2005-09-23 Verfahren zur herstellung von detektoren auf siliziumbasis mit lasermikrostrukturierten oberflächenschichten mit elektronendonatoren

Country Status (6)

Country Link
EP (2) EP1794804B1 (de)
JP (3) JP2008515196A (de)
AT (1) ATE480009T1 (de)
DE (1) DE602005023323D1 (de)
HK (1) HK1108060A1 (de)
WO (1) WO2006086014A2 (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
EP1794804B1 (de) * 2004-09-24 2010-09-01 The President and Fellows of Harvard College Verfahren zur herstellung von detektoren auf siliziumbasis mit lasermikrostrukturierten oberflächenschichten mit elektronendonatoren
US8184284B2 (en) 2005-06-14 2012-05-22 Ebstein Steven M Laser-processed substrate for molecular diagnostics
US7715003B2 (en) 2005-06-14 2010-05-11 President & Fellows Of Harvard College Metalized semiconductor substrates for raman spectroscopy
EP1896805A4 (de) 2005-06-14 2010-03-31 Steven M Ebstein Anwendungen eines laserverarbeiteten substrats zur molekulardiagnose
US8294891B2 (en) 2007-01-23 2012-10-23 President And Fellows Of Harvard College Non-invasive optical analysis using surface enhanced raman spectroscopy
WO2009017846A1 (en) 2007-07-30 2009-02-05 President And Fellows Of Harvard College Substrates for raman spectroscopy having discontinuous metal coatings
US8058615B2 (en) 2008-02-29 2011-11-15 Sionyx, Inc. Wide spectral range hybrid image detector
WO2010042121A1 (en) * 2008-10-09 2010-04-15 Sionyx Inc. Method for contact formation in semiconductor device
JP5185205B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 半導体光検出素子
JP5185208B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 フォトダイオード及びフォトダイオードアレイ
JP2013065912A (ja) * 2009-02-24 2013-04-11 Hamamatsu Photonics Kk フォトダイオードの製造方法及びフォトダイオード
JP5185207B2 (ja) * 2009-02-24 2013-04-17 浜松ホトニクス株式会社 フォトダイオードアレイ
JP5185236B2 (ja) * 2009-02-24 2013-04-17 浜松ホトニクス株式会社 フォトダイオードの製造方法及びフォトダイオード
JP5185206B2 (ja) * 2009-02-24 2013-04-17 浜松ホトニクス株式会社 半導体光検出素子
JP5805680B2 (ja) * 2009-02-24 2015-11-04 浜松ホトニクス株式会社 フォトダイオード及びフォトダイオードアレイ
JP5185157B2 (ja) 2009-02-25 2013-04-17 浜松ホトニクス株式会社 フォトダイオードの製造方法及びフォトダイオード
JP5363222B2 (ja) * 2009-07-13 2013-12-11 浜松ホトニクス株式会社 半導体光検出素子及び半導体光検出素子の製造方法
JP5261304B2 (ja) * 2009-07-13 2013-08-14 浜松ホトニクス株式会社 半導体光検出素子及び半導体光検出素子の製造方法
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
JP5616099B2 (ja) * 2010-04-01 2014-10-29 浜松ホトニクス株式会社 距離センサ及び距離画像センサ
JP5726434B2 (ja) * 2010-04-14 2015-06-03 浜松ホトニクス株式会社 半導体光検出素子
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
WO2011160130A2 (en) 2010-06-18 2011-12-22 Sionyx, Inc High speed photosensitive devices and associated methods
DE102010061831A1 (de) * 2010-11-24 2012-05-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbauelement und Verfahren zu seiner Herstellung
CN102169810B (zh) * 2010-12-27 2013-07-03 清华大学 一种使用真空腔的激光处理装置和处理方法
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US20130016203A1 (en) 2011-07-13 2013-01-17 Saylor Stephen D Biometric imaging devices and associated methods
US8865507B2 (en) 2011-09-16 2014-10-21 Sionyx, Inc. Integrated visible and infrared imager devices and associated methods
CN102400227B (zh) * 2011-11-22 2013-03-13 深圳光启高等理工研究院 一种绒面黑硅材料的制备方法
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
JP5829223B2 (ja) * 2013-01-17 2015-12-09 浜松ホトニクス株式会社 フォトダイオードの製造方法及びフォトダイオード
US9762830B2 (en) 2013-02-15 2017-09-12 Sionyx, Llc High dynamic range CMOS image sensor having anti-blooming properties and associated methods
WO2014151093A1 (en) 2013-03-15 2014-09-25 Sionyx, Inc. Three dimensional imaging utilizing stacked imager devices and associated methods
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods
CN103794563B (zh) * 2014-02-19 2017-06-06 金蔚 一种增强硅基成像器件ccd或者cmos器件红外响应的方法
CN104505432A (zh) * 2014-12-16 2015-04-08 中国科学院长春光学精密机械与物理研究所 降低黑硅材料在红外波段吸收退化的方法
CN109421402B (zh) * 2017-08-29 2020-09-22 武汉大学 一种高导电石墨烯薄膜阵列的激光雕刻制备方法
TR201819952A2 (tr) * 2018-12-20 2020-07-21 Hacettepe Ueniversitesi Geni̇ş bant araliğinda çalişan bi̇r yarii̇letken fotodi̇yot ve elde etme yöntemi̇

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4703996A (en) * 1984-08-24 1987-11-03 American Telephone And Telegraph Company, At&T Bell Laboratories Integrated optical device having integral photodetector
US5714404A (en) * 1993-11-18 1998-02-03 Regents Of The University Of California Fabrication of polycrystalline thin films by pulsed laser processing
US7390689B2 (en) * 2001-05-25 2008-06-24 President And Fellows Of Harvard College Systems and methods for light absorption and field emission using microstructured silicon
EP1794804B1 (de) * 2004-09-24 2010-09-01 The President and Fellows of Harvard College Verfahren zur herstellung von detektoren auf siliziumbasis mit lasermikrostrukturierten oberflächenschichten mit elektronendonatoren

Also Published As

Publication number Publication date
JP2008515196A (ja) 2008-05-08
JP2012064987A (ja) 2012-03-29
JP5899271B2 (ja) 2016-04-06
JP2014199940A (ja) 2014-10-23
EP2164107A2 (de) 2010-03-17
EP1794804A2 (de) 2007-06-13
HK1108060A1 (en) 2008-04-25
EP2164107A3 (de) 2010-09-15
EP1794804B1 (de) 2010-09-01
WO2006086014A2 (en) 2006-08-17
WO2006086014A3 (en) 2006-09-28
DE602005023323D1 (de) 2010-10-14

Similar Documents

Publication Publication Date Title
ATE480009T1 (de) Verfahren zur herstellung von detektoren auf siliziumbasis mit lasermikrostrukturierten oberflächenschichten mit elektronendonatoren
Zou et al. Synthesis and oxygen vacancy related NO2 gas sensing properties of ZnO: Co nanorods arrays gown by a hydrothermal method
DE502007001732D1 (de) Solarzellenmarkierverfahren und solarzelle
ATE445233T1 (de) Nitrid-halbleiterbauelement mit einem trägersubstrat und verfahren zu seiner herstellung
ATE522927T1 (de) Verfahren zur herstellung einer n-dotierten zone in einem halbleiterwafer und halbleiterbauelement
ATE433216T1 (de) Verfahren zur herstellung von lateralen halbleitervorrichtungen
DE602004029486D1 (de) Grossfläches gan-substrat mit einheitlich geringer versetzungsdichte und herstellungsverfahren dafür
JP2009260315A5 (de)
DE60314640D1 (de) Methoden zur abscheidung von atomschichten
ATE518256T1 (de) Verfahren zur herstellung eines nitrid-halbleiter-bauelements
JP2009520376A5 (de)
Nolasco et al. Femtosecond laser micromachining of GaN using different wavelengths from near-infrared to ultraviolet
Constantinescu et al. Laser-induced forward transfer of multi-layered structures for OTFT applications
CN102623639A (zh) 一步实现图案化和自修饰界面的有机薄膜晶体管制备方法
JP2012124263A5 (de)
Durbach et al. Laser-Driven One-and Two-Dimensional Subwavelength Periodic Patterning of Thin Films Made of a Metal–Organic MoS2 Precursor
ATE504087T1 (de) Verfahren zur gleichzeitigen rekristallisierung und dotierung von halbleiterschichten und nach diesem verfahren hergestellte halbleiterschichtsysteme
Takao et al. Fabrication of SiO/sub 2/microlenses on silicone rubber using a vacuum-ultraviolet F/sub 2/laser
RU2462366C1 (ru) Способ создания изображения из монокристаллов в теле листового невпитывающего материала
JP2003332190A (ja) 半導体ウエーハの表面処理方法
Abdelazim et al. Lateral electrodeposition of MoS2 semiconductor over an insulator
Abed et al. Study the effect of CO2 laser annealing on silicon nanostructures
Lalic Light emitting devices based on silicon nanostructures
ATE504861T1 (de) Herstellung von stempeln, masken und schablonen zur herstellung von halbleiterbauelementen
Murray et al. Femtosecond pulsed laser fabricated nanocomposite photonic materials on silicon

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties