FR2807569B1 - Perfectionnement apportes aux diodes schottky - Google Patents
Perfectionnement apportes aux diodes schottkyInfo
- Publication number
- FR2807569B1 FR2807569B1 FR0004583A FR0004583A FR2807569B1 FR 2807569 B1 FR2807569 B1 FR 2807569B1 FR 0004583 A FR0004583 A FR 0004583A FR 0004583 A FR0004583 A FR 0004583A FR 2807569 B1 FR2807569 B1 FR 2807569B1
- Authority
- FR
- France
- Prior art keywords
- schottky diodes
- schottky
- diodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0004583A FR2807569B1 (fr) | 2000-04-10 | 2000-04-10 | Perfectionnement apportes aux diodes schottky |
PCT/FR2001/001101 WO2001078152A2 (fr) | 2000-04-10 | 2001-04-10 | Dispositif semi-conducteur du type diode schottky |
US10/239,629 US20040046224A1 (en) | 2000-04-10 | 2001-04-10 | Schottky-diode semiconductor device |
KR1020027013518A KR20030011820A (ko) | 2000-04-10 | 2001-04-10 | 쇼트키-다이오드 타입의 반도체 디바이스 |
JP2001574907A JP2003530700A (ja) | 2000-04-10 | 2001-04-10 | ショットキーダイオードタイプの半導体装置及びその使用方法 |
EP01923789A EP1273046A2 (fr) | 2000-04-10 | 2001-04-10 | Dispositif semi-conducteur du type diode schottky |
AU2001250477A AU2001250477A1 (en) | 2000-04-10 | 2001-04-10 | Schottky-diode semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0004583A FR2807569B1 (fr) | 2000-04-10 | 2000-04-10 | Perfectionnement apportes aux diodes schottky |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2807569A1 FR2807569A1 (fr) | 2001-10-12 |
FR2807569B1 true FR2807569B1 (fr) | 2004-08-27 |
Family
ID=8849086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0004583A Expired - Fee Related FR2807569B1 (fr) | 2000-04-10 | 2000-04-10 | Perfectionnement apportes aux diodes schottky |
Country Status (7)
Country | Link |
---|---|
US (1) | US20040046224A1 (fr) |
EP (1) | EP1273046A2 (fr) |
JP (1) | JP2003530700A (fr) |
KR (1) | KR20030011820A (fr) |
AU (1) | AU2001250477A1 (fr) |
FR (1) | FR2807569B1 (fr) |
WO (1) | WO2001078152A2 (fr) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002084745A2 (fr) | 2001-04-11 | 2002-10-24 | Silicon Wireless Corporation | Dispositifs semi-conducteurs de puissance presentant des zones ecran de base s'etendant lateralement qui empechent de traverser la base et procedes de fabrication associes |
US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
US7057256B2 (en) | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
US7238976B1 (en) * | 2004-06-15 | 2007-07-03 | Qspeed Semiconductor Inc. | Schottky barrier rectifier and method of manufacturing the same |
EP1790013A1 (fr) | 2004-08-31 | 2007-05-30 | Freescale Semiconductor, Inc. | Dispositif de puissance a semi-conducteurs |
US7737522B2 (en) * | 2005-02-11 | 2010-06-15 | Alpha & Omega Semiconductor, Ltd. | Trench junction barrier controlled Schottky device with top and bottom doped regions for enhancing forward current in a vertical direction |
US7671439B2 (en) * | 2005-02-11 | 2010-03-02 | Alpha & Omega Semiconductor, Ltd. | Junction barrier Schottky (JBS) with floating islands |
DE102005046706B4 (de) | 2005-09-29 | 2007-07-05 | Siced Electronics Development Gmbh & Co. Kg | JBS-SiC-Halbleiterbauelement |
WO2007075996A2 (fr) * | 2005-12-27 | 2007-07-05 | Qspeed Semiconductor Inc. | Appareil et procédé pour structure de redresseur à rétablissement rapide |
US7633135B2 (en) * | 2007-07-22 | 2009-12-15 | Alpha & Omega Semiconductor, Ltd. | Bottom anode Schottky diode structure and method |
US7560355B2 (en) * | 2006-10-24 | 2009-07-14 | Vishay General Semiconductor Llc | Semiconductor wafer suitable for forming a semiconductor junction diode device and method of forming same |
DE102007009227B4 (de) * | 2007-02-26 | 2009-01-02 | Infineon Technologies Ag | Halbleiterbauelement mit gleichrichtenden Übergängen sowie Herstellungsverfahren zur Herstellung desselben |
TW200847448A (en) * | 2007-05-30 | 2008-12-01 | Intersil Inc | Junction barrier schottky diode |
US8368166B2 (en) * | 2007-05-30 | 2013-02-05 | Intersil Americas Inc. | Junction barrier Schottky diode |
US7750426B2 (en) * | 2007-05-30 | 2010-07-06 | Intersil Americas, Inc. | Junction barrier Schottky diode with dual silicides |
JP2007311822A (ja) * | 2007-07-23 | 2007-11-29 | Toshiba Corp | ショットキーバリヤダイオード |
JP2009076866A (ja) * | 2007-08-31 | 2009-04-09 | Sumitomo Electric Ind Ltd | ショットキーバリアダイオード |
US9102962B2 (en) * | 2007-10-16 | 2015-08-11 | Shiu Nan Chen | Production method for solid cultured active mushroom mycelium and fruit-body metabolites (AMFM) products thereof |
US8212327B2 (en) * | 2008-03-06 | 2012-07-03 | Sionyx, Inc. | High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme |
US7851881B1 (en) * | 2008-03-21 | 2010-12-14 | Microsemi Corporation | Schottky barrier diode (SBD) and its off-shoot merged PN/Schottky diode or junction barrier Schottky (JBS) diode |
US8106487B2 (en) * | 2008-12-23 | 2012-01-31 | Pratt & Whitney Rocketdyne, Inc. | Semiconductor device having an inorganic coating layer applied over a junction termination extension |
US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US8692198B2 (en) | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
EP2583312A2 (fr) | 2010-06-18 | 2013-04-24 | Sionyx, Inc. | Dispositifs photosensibles à grande vitesse et procédés associés |
US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
US20130016203A1 (en) | 2011-07-13 | 2013-01-17 | Saylor Stephen D | Biometric imaging devices and associated methods |
US8362585B1 (en) | 2011-07-15 | 2013-01-29 | Alpha & Omega Semiconductor, Inc. | Junction barrier Schottky diode with enforced upper contact structure and method for robust packaging |
US9064764B2 (en) | 2012-03-22 | 2015-06-23 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
JP6466346B2 (ja) | 2013-02-15 | 2019-02-06 | サイオニクス、エルエルシー | アンチブルーミング特性を有するハイダイナミックレンジcmos画像センサおよび関連づけられた方法 |
US9939251B2 (en) | 2013-03-15 | 2018-04-10 | Sionyx, Llc | Three dimensional imaging utilizing stacked imager devices and associated methods |
JP2014236171A (ja) * | 2013-06-05 | 2014-12-15 | ローム株式会社 | 半導体装置およびその製造方法 |
US9209345B2 (en) | 2013-06-29 | 2015-12-08 | Sionyx, Inc. | Shallow trench textured regions and associated methods |
US9070790B2 (en) * | 2013-08-29 | 2015-06-30 | Infineon Technologies Ag | Vertical semiconductor device and method of manufacturing thereof |
US9704949B1 (en) * | 2016-06-30 | 2017-07-11 | General Electric Company | Active area designs for charge-balanced diodes |
CN116093164B (zh) * | 2023-04-07 | 2023-07-11 | 深圳市晶扬电子有限公司 | 一种带有浮岛型保护环的高压肖特基二极管 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4837227B1 (fr) * | 1968-12-20 | 1973-11-09 | ||
GB1558506A (en) * | 1976-08-09 | 1980-01-03 | Mullard Ltd | Semiconductor devices having a rectifying metalto-semicondductor junction |
JPH06275816A (ja) * | 1993-03-18 | 1994-09-30 | Shindengen Electric Mfg Co Ltd | ショットキバリヤダイオ−ド |
DE69505646T2 (de) * | 1994-12-20 | 1999-05-20 | Koninklijke Philips Electronics N.V., Eindhoven | Schaltungsanordnung und sperrschicht-feldeffekttransistor zur anwendung in einer derartigen schaltungsanordnung |
US6037632A (en) * | 1995-11-06 | 2000-03-14 | Kabushiki Kaisha Toshiba | Semiconductor device |
JPH10117003A (ja) * | 1996-10-14 | 1998-05-06 | Hitachi Ltd | 定電圧ダイオード及びその製造方法 |
JP2002503401A (ja) * | 1998-04-08 | 2002-01-29 | シーメンス アクチエンゲゼルシヤフト | プレーナ構造用の高耐圧コーナー部シール体 |
DE19943143B4 (de) * | 1999-09-09 | 2008-04-24 | Infineon Technologies Ag | Halbleiterbauelement für hohe Sperrspannungen bei gleichzeitig niedrigem Einschaltwiderstand und Verfahren zu dessen Herstellung |
DE10061528C1 (de) * | 2000-12-11 | 2002-07-25 | Infineon Technologies Ag | Mittels Feldeffekt steuerbares Halbleiterbauelement |
-
2000
- 2000-04-10 FR FR0004583A patent/FR2807569B1/fr not_active Expired - Fee Related
-
2001
- 2001-04-10 EP EP01923789A patent/EP1273046A2/fr not_active Withdrawn
- 2001-04-10 AU AU2001250477A patent/AU2001250477A1/en not_active Abandoned
- 2001-04-10 KR KR1020027013518A patent/KR20030011820A/ko not_active Application Discontinuation
- 2001-04-10 WO PCT/FR2001/001101 patent/WO2001078152A2/fr not_active Application Discontinuation
- 2001-04-10 JP JP2001574907A patent/JP2003530700A/ja active Pending
- 2001-04-10 US US10/239,629 patent/US20040046224A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2001078152A2 (fr) | 2001-10-18 |
FR2807569A1 (fr) | 2001-10-12 |
EP1273046A2 (fr) | 2003-01-08 |
KR20030011820A (ko) | 2003-02-11 |
WO2001078152A3 (fr) | 2002-02-07 |
AU2001250477A1 (en) | 2001-10-23 |
JP2003530700A (ja) | 2003-10-14 |
US20040046224A1 (en) | 2004-03-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20051230 |