TWI729495B - 高溫rf加熱器座 - Google Patents

高溫rf加熱器座 Download PDF

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TWI729495B
TWI729495B TW108133168A TW108133168A TWI729495B TW I729495 B TWI729495 B TW I729495B TW 108133168 A TW108133168 A TW 108133168A TW 108133168 A TW108133168 A TW 108133168A TW I729495 B TWI729495 B TW I729495B
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substrate support
matcher
rod
electrode
support assembly
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TW202030828A (zh
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秀南 朴
大衛 班傑明森
熹坤 王
迪米奇 路柏曼斯基
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美商應用材料股份有限公司
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Abstract

說明一種半導體處理系統，此系統可以包括具有基板支撐表面的基板支撐組件。示例性的基板支撐組件可包括界定基板支撐表面的陶瓷加熱器。組件可包括接地板，陶瓷加熱器位於接地板上。組件可包括與接地板耦接的桿。組件可包含電極，電極嵌入陶瓷加熱器於距離基板支撐表面的一深度處。腔室或系統亦可包含RF匹配器，RF匹配器經配置以透過桿提供AC電流與RF功率至電極。RF匹配器可沿著桿與基板支撐組件耦合。基板支撐組件和RF匹配器可以在半導體處理系統內垂直平移。

Description

高溫RF加熱器座
與相關申請案的交互參照：本申請案主張對於申請於2018年9月17日的美國專利申請案第16/132,806號的優先權。在此引入上述申請案的全部內容以作為參考。
本技術係關於製造半導體的組件與設備。更特定而言，本技術係關於基板底座組件和其他半導體處理設備。
藉由在基板表面上產生具有錯綜複雜圖案的材料層，而使積體電路的製造成為可能。在基板上產生圖案化材料，需要用於形成與移除材料的受控方法。發生這些製程的溫度，可能會直接影響最終產品。在處理期間，通常藉由支撐基板的組件來控制和維持基板溫度。此外，可形成基板層級電漿，以產生可以在基板處理中使用的自由基流出物。隨著基板處理變得更加複雜，許多電漿操作會以破壞結構的功率位準發生，並且可無法提供對電漿特性的充分控制，從而導致效能變異。根據變異的程度，可能無法在整個基板表面上均勻地執行處理，並且，應用產生的不一致性可能會導致元件損壞。
另外，容納在半導體處理腔室內的結構可能會受到腔室內執行的製程的影響。例如，在腔室內產生的電漿流出物，可能轟擊或以其他方式與其他腔室組件相互作用，這可能導致腐蝕或侵蝕。
因此，由於這些和其他的原因，需要半導體處理腔室內的改進的設備和組件。本科技解決了此等與其他的需求。
說明一種半導體處理系統，此系統可以包括具有基板支撐表面的基板支撐組件。示例性的基板支撐組件可包括界定基板支撐表面的陶瓷加熱器。組件可包括接地板，陶瓷加熱器位於接地板上。組件可包括與接地板耦接的桿。組件可包含電極，電極嵌入陶瓷加熱器於距離基板支撐表面的一深度處。腔室或系統亦可包含RF匹配器，RF匹配器經配置以透過桿提供AC電流與RF功率至電極。RF匹配器可沿著桿與基板支撐組件耦合。基板支撐組件和RF匹配器可以在半導體處理系統內垂直平移。
在一些具體實施例中，電極嵌入陶瓷加熱器處距離基板支撐表面的深度可為少於或約5 mm。基板支撐組件可用以將基板加熱至大於或約200°C的溫度。基板支撐表面可塗覆有抗電漿材料，抗電漿材料包含氧化釔。處理系統可進一步包含RF棒，RF棒延伸於RF匹配器與基板支撐組件之間。半導體處理系統可進一步包含第二RF棒，第二RF棒放置在設置於桿內的陶瓷軸內，並與陶瓷加熱器擴散接合(diffusion bonded)。基板支撐組件在RF棒與電極之間包含少於十個耦合件。RF匹配器可包含RF帶，RF帶使RF功率源與RF棒耦接。RF匹配器可包含RF濾波器，RF濾波器使AC功率源與RF棒耦接。RF濾波器可包括電感器和電容器。電感器可以是（或包括）鐵氧體磁芯。電感器可提供至少2 µH的電感。RF匹配器可以被配置為提供脈衝RF功率。電極可經配置以在基板支撐組件上方在半導體處理系統內的一體積中產生RF偏壓電漿。
本技術的一些具體實施例還可包括具有基板支撐表面的基板支撐組件。基板支撐組件可包括界定基板支撐表面的陶瓷加熱器。基板支撐組件可包括接地板，陶瓷加熱器位於接地板上。基板支撐組件可包括與接地板耦接的桿。基板支撐組件可包含電極，電極嵌入陶瓷加熱器於距離基板支撐表面的一深度處。電極可經配置以在基板支撐組件上方的一體積中產生RF偏壓電漿。基板支撐組件亦可包含RF匹配器，RF匹配器經配置以透過桿提供AC電流與RF功率至電極。
在一些具體實施例中，RF匹配器可經配置以提供低於或約100 W的電漿功率至電極。RF匹配器可包含RF帶，RF帶使RF功率源與RF棒耦接，RF棒延伸於RF匹配器與基板支撐組件之間。RF匹配器可包含RF濾波器，RF濾波器使AC功率源與RF棒耦接。RF濾波器可包括電感器和電容器。基板支撐組件可經配置以將基板加熱至大於或約400°C的溫度。
本技術的一些具體實施例還可以包括半導體處理系統。系統可以包括具有基板支撐表面的基板支撐組件。基板支撐組件可包括界定基板支撐表面的陶瓷加熱器。基板支撐組件可包括接地板，陶瓷加熱器位於接地板上。基板支撐組件可包括與接地板耦接的桿。基板支撐組件亦可包含電極，電極嵌入陶瓷加熱器於距離基板支撐表面的一深度處。電極可經配置以在基板支撐組件上方的一體積中產生RF偏壓電漿。系統亦可包含RF匹配器，RF匹配器經配置以透過桿提供AC電流與RF功率至電極。RF匹配器可沿著桿與基板支撐組件耦合。RF匹配器可經配置以提供低於或約50 W的電漿功率至電極。RF匹配器與電極之間的電耦合件之特徵在於在操作時的損耗小於或約1 W。基板支撐組件與RF匹配器可在半導體處理系統內垂直平移。
此種技術可提供優於習知設備的數個益處。例如，根據本技術的一些具體實施例的組件，可能能夠在比習知裝置更高的溫度下操作。另外，本技術的系統可以以低功率產生穩定的電漿，從而提供了優於習知裝置的增強控制。結合下列說明與附加圖式更詳細地說明此些與其他的具體實施例（以及許多他們的優點與特徵）。
隨著元件特徵尺寸不斷縮小且複雜性不斷提高，控制材料的去除變得越來越重要。一種去除方法涉及在多部分蝕刻製程中循序去除薄材料層。一個這樣的蝕刻製程，可包括藉由使材料與惰性電漿流出物接觸來改性要去除的特徵或材料的表面，這可破壞材料的鍵結，並且可以促進隨後的化學製程中的去除，此化學製程可以在高溫度下進行。改性作業可以包括形成晶圓或基板層級的電漿，這允許轟擊暴露的特徵和材料。使用一些製程以去除薄材料層，諸如數埃或數奈米的材料，因此可尋求控制和最小化去除。
許多習知的電漿系統無法利用底座或基板支撐件作為熱電極，以在基板層級產生受控的低層級偏壓電漿。由於電漿源和匹配電路的限制，這些技術無法持續充分地在低功率下維持電漿。複雜的耦合器和系統，可產生對於低功率電漿而言太大的損耗。另外，可以使用相同的耦合器和材料，為底座組件上或內部的電阻加熱器輸送電流。電流分量可受到電漿功率的干擾，並可發生其他損耗。另外，根據底座配置，底座內的耦合可能不允許在高溫下操作，這可能會損壞在吸盤上的接合。
本技術的具體實施例藉由利用可將底座內的耦合最小化的特定組件和配置，來克服這些和其他的問題。另外，在RF匹配器中併入額外的濾波器可以減少雜訊，從而進一步減少損耗和干擾。最後，在底座中使用的材料可包括被選擇為限制界面接合損傷的材料，否則此界面接合損傷可能在更高溫度的作業條件下發生。在描述了其中可以佈置根據本技術的一些具體實施例的底座的示例性系統之後，本揭示內容將描述各種基板支撐組件的數種特徵。
圖1圖示根據具體實施例的具有沉積、蝕刻、烘烤與固化腔室的處理系統100的一個具體實施例的俯視平面圖。在圖式中，一對前開式晶圓傳送盒(FOUPs)102供應各種尺寸的基板，基板由機械臂104接收，並放入低壓固持區域106中，然後放入位於串聯部分109a-c中的基板處理腔室108a-f之一者。可使用第二機械臂110以將基板晶圓在固持區域106與基板處理腔室108a-f之間來回運輸。每一基板處理腔室108a-f可被配置以執行各種基板處理作業，包含本文所說明的乾式蝕刻處理，以及循環層沉積（CLD）、原子層沉積（ALD）、化學氣相沉積（CVD）、物理氣相沉積（PVD）、蝕刻、預清洗、脫氣、定向以及其他的基板製程。
基板處理腔室108a-f可包含一或更多個系統組件，以對基板晶圓上的介電薄膜進行沉積、退火、固化及（或）蝕刻。在一個配置中，可使用兩對處理腔室（例如108c-d與108e-f）在基板上沉積介電材料，並可使用第三對處理腔室（例如108a-b）以蝕刻所沉積的介電質。在另一配置中，可使用全部三對腔室（例如108a-f）以在基板上蝕刻介電薄膜。所說明的製程的任一者或更多者，可被實行於與圖示於不同具體實施例中的製造系統分離的一或多個腔室中。將理解到系統100思及到對於介電薄膜的沉積、蝕刻、退火與固化腔室的額外配置。
圖2A圖示示例性處理腔室200的截面圖，處理腔室200內具有分區電漿產生區域。在薄膜蝕刻期間內（例如氮化鈦、氮化鉭、鎢、矽、多晶矽、氧化矽、氮化矽、氮氧化矽、碳氧化矽等等），製程氣體可透過氣體入口組件205流入第一電漿區域215。視情況，系統可包含遠端電漿系統(RPS)201，RPS 201可處理第一氣體，第一氣體隨後行進通過氣體入口組件205。入口組件205可包含兩或更多個分異的氣體供應通道，其中第二通道（未圖示）可繞過RPS 201（若有包含）。
圖示冷卻板203、面板217、離子抑制器223、噴淋頭225與基板支座265（其上設置有基板255），可根據具體實施例而包含這些每一者。底座265可具有熱交換通道，熱交換流體流動通過熱交換通道以控制基板溫度，在處理作業期間內可操作基板溫度以加熱及（或）冷卻基板或晶圓。底座265的晶圓支撐板（可包含鋁、陶瓷或以上之結合）亦可使用嵌入式電阻式加熱器元件而受到電阻式加熱，以達到相對較高的溫度，諸如從上至（或約）100°C直至1100°C以上（或約1100°C）。
面板217可以是金字塔形、圓錐形或其他類似結構，且頂部較窄而擴展到較寬的底部。此外如圖所示，面板217可以是平的，並且包括用於分配製程氣體的複數個貫通通道。電漿產生氣體及（或）電漿激發物質（取決於RPS 201的用途），可穿過在面板217中的複數個孔，如圖2B所示，以更均勻地輸送到第一電漿區域215中。
示例性配置可包括使氣體入口組件205通向由面板217與第一電漿區域215分隔的氣體供應區域258，使得氣體/物質流過面板217中的孔進入第一電漿區域215。可選擇結構和操作特徵，以防止電漿從第一電漿區域215大量回流到供應區域258、氣體入口組件205和流體供應系統210中。面板217或腔室的導電頂部以及噴淋頭225，被圖示為具有位於特徵之間的絕緣環220，絕緣環220允許將AC電位相對於噴淋頭225及（或）離子抑制器223施加到面板217。絕緣環220可以位於面板217和噴淋頭225及（或）離子抑制器223之間，使得能夠在第一電漿區域中形成電容耦合電漿（CCP）。擋板（未示出）可另外位於第一電漿區域215中，或以其他方式與氣體入口組件205耦合，以影響通過氣體入口組件205進入區域的流體流動。
離子抑制器223可包括界定貫穿整個結構的複數個孔的板或其他幾何形狀，複數個孔配置成抑制離子帶電物質從第一電漿區域215遷移出來，同時允許不帶電的中性或自由基物質通過離子抑制器223進入抑制器和噴淋頭之間的活化氣體輸送區域。在具體實施例中，離子抑制器223可包括具有各種孔配置的多孔板。這些不帶電荷的物質可包括高反應性物質，高反應性物質與較少反應性的載氣(carrier gas)通過孔輸送。如上所述，可減少離子物質通過孔的遷移，並且在一些情況下可完全抑制遷移。控制通過離子抑制器223的離子物質的量，可有利地提升對於接觸下方晶圓基板的氣體混合物的控制，這可又提升對氣體混合物的沉積及（或）蝕刻特性的控制。例如，調整氣體混合物的離子濃度可顯著改變氣體混合物的蝕刻選擇性，例如SiNx：SiOx蝕刻比、Si：SiOx蝕刻比等等。在進行沉積的替代性具體實施例中，這也可以改變對於介電材料的保形 - 可流動式沉積的平衡。
離子抑制器223中的複數個孔可用以控制活化氣體（即離子、自由基及（或）中性物質）通過離子抑制器223。例如，可控制孔的縱橫比（孔徑與長度比），及（或）孔的幾何形狀，以使得減少通過離子抑制器223的活化氣體中的離子帶電物質的流動。離子抑制器223中的孔可包括面對電漿激發區域215的錐形部分，以及面對噴淋頭225的圓柱形部分。圓柱形部分的形狀和尺寸可被設置，以控制通向噴淋頭225的離子物質的流動。亦可對離子抑制器223施加可調節的電偏壓，作為控制離子物質流過抑制器的額外手段。
離子抑制器223可用於減少或消除從電漿產生區域行進到基板的離子帶電物質的量。不帶電的中性和自由基物質仍然可以通過離子抑制器中的開口以與基板反應。應當注意，在具體實施例中可不執行在基板周圍的反應區域中完全消除離子帶電物質。在某些情況下，離子物質旨在到達基板以執行蝕刻及（或）沉積製程。在這些情況下，離子抑制器可幫助將反應區域中離子物質的濃度控制在有助於此製程的水平。
噴淋頭225與離子抑制器223的組合，可允許存在於第一電漿區域215中的電漿避免直接激發基板處理區域233中的氣體，同時仍然允許激發物質從腔室電漿區域215行進到基板處理區域233中。以這種方式，腔室可用以防止電漿接觸被蝕刻的基板255。這可以有利地保護在基板上圖案化的各種複雜結構和膜，如果直接與產生的電漿接觸，則這些複雜結構和膜可能損壞、錯位或翹曲。另外，當允許電漿接觸基板或接近基板位準時，氧化物種類蝕刻的速率可以增加。因此，如果材料的暴露區域是氧化物，則可以藉由使電漿遠離基板來進一步保護此材料。
處理系統還可包括電源供應器240，電源供應器240與處理腔室電耦合，以向面板217、離子抑制器223、噴淋頭225及（或）底座265提供電力，以在第一電漿區域215或處理區域233中產生電漿。電源供應器可用以根據所執行的製程向腔室輸送可調節的功率量。這樣的配置可以允許將可調諧電漿用於正在執行的製程中。與遠端電漿單元（通常具有開啟或關閉功能）不同，可調諧電漿可用以向電漿區域215輸送特定量的功率。這又可以允許產生特定的電漿特性，使得前驅物可以以特定方式解離，以增強由這些前驅物產生的蝕刻輪廓。
電漿可以在噴淋頭225上方的腔室電漿區域215中或者在噴淋頭225下方的基板處理區域233中被點燃。電漿可以存在於腔室電漿區域215中，以從例如含氟前驅物或其他前驅物的流入物中產生自由基前驅物。通常在射頻（RF）範圍內的AC電壓可以施加在處理腔室的導電頂部（諸如面板217）和噴淋頭225及（或）離子抑制器223之間，以在沉積期間點燃腔室電漿區域215中的電漿。RF電源供應器可產生13.56 MHz的高RF頻率，但是也可以單獨產生其他頻率或者與13.56MHz頻率組合產生其他頻率。
圖2B圖示影響通過面板217的處理氣體分佈的特徵的詳細視圖253。如第2A圖與第2B圖圖示，面板217、冷卻板203和氣體入口組件205相交以限定氣體供應區域258，製程氣體可以從氣體入口205輸送到氣體供應區域258中。氣體可以填充氣體供應區域258並且通過面板217中的孔259流到第一電漿區域215。孔259可用以基本上單向的方式引導流動，使得製程氣體可以流入處理區域233，但是可以在穿過面板217之後部分地或完全地防止回流到氣體供應區域258中。
用於處理腔室部分200的諸如噴淋頭225的氣體分配組件，可以被稱為雙通道噴淋頭（DCSH），並且在圖3中描述的具體實施例中另外詳述。雙通道噴淋頭可提供允許在處理區域233外分離蝕刻劑的蝕刻製程，以在被輸送到處理區域之前限制腔室組件和彼此之間的相互作用。
噴淋頭225可包括上板214和下板216。該等板可彼此連接以在板之間限定體積218。板的連接可以是通過上板和下板提供第一流體通道219，並且通過下板216提供第二流體通道221。形成的通道可用以僅通過第二流體通道221提供從體積218通過下板216的流體通路，並且第一流體通道219可以與板和第二流體通道221之間的體積218流體隔離。體積218可通過氣體分配組件225的側面流體性接取。
第3圖為根據具體實施例的與處理腔室一起使用的噴淋頭325的仰視圖。噴淋頭325可對應於第2A圖中所示的噴淋頭225。顯示第一流體通道219的視圖的通孔365可具有複數種形狀和構造，以便控制和影響前驅物通過噴淋頭225的流動。顯示第二流體通道221的視圖的小孔375，可以基本上均勻地分佈在噴淋頭的表面上，在通孔365之中為平均，並且可以有助於在前驅物離開噴淋頭時提供比其他配置更均勻的前驅物混合。
先前討論的腔室以及可以在其中執行電漿或非電漿作業的任何其他腔室，可以包括可以用於執行示例性方法的額外基板支撐組件，這些示例性方法包括如前所述的蝕刻方法。看到圖4，圖4示出了根據本技術的一些具體實施例的基板支撐組件400的透視截面示意圖。支撐組件400可包括基板支座405和桿410。基板支座405可界定出基板支撐表面407，基板支撐表面407用以在半導體處理作業期間支撐基板。基板支撐表面407可以由金屬（諸如鋁）或陶瓷或其他材料製成，並且可以用提供改善的耐腐蝕性、改善的與基板的接觸或（例如）減少的電漿流出物的侵蝕的其他材料進行處理或塗覆。
桿410可以與基板支撐表面407相對地附接到基板支座405。桿410可包括一個或多個內部通道412，內部通道412用以輸送和接收溫度控制的流體，加壓流體、氣體、以及提供用於包括熱電偶、棒和其他連接物品的組件的導管。基板支座可包括多個組件，並且可包括加熱器板415，加熱器板415可以是陶瓷加熱器或任何其他類型的導電材料。加熱器板415可以包括嵌入式電極（將在下面進一步描述），並且可以接收用於加熱器415的溫度控制的電流。另外，基板支座可包括接地板417，加熱器板415可以位於接地板417上。接地板417可以與桿410耦合，並且可以與嵌入在加熱器板內的電極電隔離。例如，因為電流可以被傳遞到電極，所以加熱器415（可以是如前所述的陶瓷）可以作為絕緣體以限制與電極的短路。
桿410的一部分可以是帶螺紋的，或者可以包括螺紋輪廓413，螺紋輪廓413可以允許基板支撐組件400透過機動且具有類似螺紋的機構414垂直地上下移動。藉由允許減小底座與界定電漿處理區域的相對電極之間的間隙，提供垂直平移可以提供許多好處。藉由調節電漿窗口，可以在處理期間提供更多的控制。許多習知的支撐組件（尤其是具有RF電漿能力的支撐組件）位置可固定，並且不易移動（可能需要額外的耦合件），或者基於需要固定耦合件的單獨放置的電漿組件（諸如RF匹配器）而言可能不實用。本技術藉由將許多相關組件與可移動底座耦合，而允許具有可調節的電漿窗口。這些裝置可以與底座本身一起移動，這可以允許移動原本固定的組件。
基板支撐組件400可額外包括RF匹配器420，RF匹配器420可與桿410的一部分耦合，諸如在基板支撐組件延伸穿過的腔室底部403下方。RF匹配器420在此圖中被顯示為空的，但是下面將進一步詳細描述RF匹配器中包括的組件。RF匹配器420可以作為用於所傳送的RF功率的阻抗匹配網絡。通常，匹配網路可以連接在源和負載之間，此源可以是嵌入陶瓷加熱器內的電極。電路系統可以被設計和配置為向負載傳輸盡可能多的功率，同時示出等於源的輸出阻抗的複共軛的輸入阻抗，例如50歐姆。在低功率系統中，改善RF匹配可以提高產生的電漿的穩定性，並可以減少對通過組成組件呈現的其他源的干擾。RF匹配器420可以被配置為向嵌入式電極提供RF功率。在一些具體實施例中，RF匹配器420還可以提供用於操作電阻加熱元件的電流，諸如AC電流，此電阻加熱元件也可以是嵌入在陶瓷加熱器內的電極。下面更詳細地描述RF匹配器420的設計和配置。
RF匹配器420可以通過桿410向嵌入加熱器板415內的電極提供AC電流和/或RF功率。如圖所示，RF匹配器420可以與基板支撐組件耦合，並且可以直接耦合至桿。因此，匹配器可以與底座組件一起移動，從而允許底座的垂直平移而不會使通過組件的RF路徑複雜化。可以將未示出的RF產生器連接到RF匹配器，以在從大約400 kHz到大約60 MHz的各種工作頻率下提供RF功率，工作頻率可以包括400 kHz、2 MHz、13.56 MHz、27 MHz、40 MHz、60 MHz以及任何其他包含於其中的頻率，包括在較寬範圍內涵蓋的任何較窄頻率範圍。RF匹配器420可以被配置為操作或提供一定的電漿功率，在一些具體實施例中，具體可以為低功率電漿。例如，5 kW的RF匹配器可不能夠產生5 W的穩定電漿，而根據本技術的具體實施例的RF匹配器可用以產生低功率的穩定電漿。
例如，根據本技術的具體實施例的RF匹配器420，可以被配置為以小於或約1 kW的RF電漿功率進行操作，並且可以被特定配置為以小於或約500 W、小於或約100 W、小於或約90 W、小於或約80 W、小於或約70 W、小於或約60 W、小於或約50 W、小於或約40 W、小於或大約30 W、小於或大約20 W、小於或大約10 W、小於或大約9 W、小於或大約8 W、小於或大約7 W、小於或大約6 W、小於或大約5 W、小於或大約4 W、小於或大約3 W、或更少的RF電漿功率來進行操作。例如，在一些具體實施例中，基於由垂直平移能力所產生的減少的損耗和對腔室內的電漿窗口的控制，根據本技術的RF匹配器可以在本技術的具體實施例中產生穩定的電漿，其範圍在約5 W至約100 W之間。當產生較低位準功率的電漿時（諸如本地電漿），可較少發生跨基板的整個特徵上的結構損壞，並且可以提供更多的微調去除。例如，較低的功率可限制離子在基板表面的滲透，這可限制損壞和去除深度。
RF匹配器420和嵌入式電極之間的耦合，可以包括多個組件和耦合件，這些組件和耦合件提供通過底座的RF功率傳輸路徑。然而，在一些具體實施例中，可以指定組件和路徑以減少系統內的耦合件、匝數和其他損耗源。第一RF棒425可以定位在RF匹配器420和組件桿410內，並且可以在RF匹配器420和底座之間延伸。第一RF棒425可以與束棒430耦合，束棒430可以是耦合件或其他連接結構，可在第一RF棒425（包括與第一RF棒425耦合的間隙組件）和第二RF棒435之間提供直接或間接的耦合。第二RF棒435可延伸穿過桿並進入基板支座405，在此處第二RF棒435可與嵌入在加熱器板415內的電極耦合。在一些具體實施例中，第二RF棒435可以剛性地向上延伸穿過桿，並且可以是單件或多件式組件。任何組件都可以導電，並旨在最大程度降低系統損耗。
如上所述，在低功率電漿系統中，損耗可能是巨大的。例如，在3 kW系統中，佔1 W損耗的損耗可能算是很優秀，因為損耗不到1％。但是，在提供5 W電漿功率的系統中，來自耦合件和材料的1 W損耗為20％損耗，這可限制電漿的穩定性，並可引起許多效能問題。耦合件、連結和材料均可能導致損耗以及其他干擾，這將在下面進一步討論。在一些具體實施例中，根據本技術的系統可以在RF產生器與併入底座內的電極之間具有少於10個的耦合件，這些耦合件用於在腔室的處理區域內在基板支撐表面上方的體積中產生電漿。
耦合件可包括通過RF匹配器的耦合件，或可包括RF棒425處的匹配器與基板支座內的電極之間的數個耦合件。另外，系統或這些位置中的任何一個可包括少於或大約9個耦合件、少於或大約8個耦合件、少於或大約7個耦合件、少於或大約6個耦合件、少於或大約5個耦合件、少於或大約5個耦合件、少於或大約4個耦合件、少於或大約3個耦合件、或少於或大約2個耦合件，其中產生器或RF匹配器可包括與電極耦合的單個元件。用於RF棒或任何耦合件的材料，可包括銅、鋁、銀、金，其可以包括將這些材料之一鍍在較便宜的材料上。另外，系統中使用的電纜可以是50歐姆同軸電纜。從RF匹配器到電極的匝數也可影響損耗，其中匝數增加可能會增加損耗，在一些具體實施例中，射頻傳輸路徑的特徵在於在傳輸路徑中從一個組件到下一個組件之間的匝數少於或約10匝，並可特徵在於小於或約9匝、小於或約8匝、小於或約7匝、小於或約6匝、小於或約5匝、小於或約4匝、小於或約3匝、小於或約2匝、小於或約1匝、或在一些具體實施例中無匝。
結合起來，這些材料以及如下所述的濾波器可以結合起來以限制系統內的損耗。損耗可相對於RF電漿的功率輸出。例如，1 W的損耗在100 W的電漿配置中可能表示1％的損耗，但在5 W的電漿配置中可能表示20％的損耗。因此，本技術可在操作中產生小於或約10 W的損耗，而不論電漿功率如何，並且可產生小於或約9 W、小於或約8 W、小於或約7 W、小於或大約6 W、小於或大約5 W、小於或大約4 W、小於或大約3 W、小於或大約2 W、小於或大約1 W或更少的損耗。類似地，並且基於操作RF匹配器的特定電漿功率，系統可以被配置為提供小於或大約20％的操作損耗，並且可以提供小於或大約18％、小於或約16％、小於或約14％、小於或約12％、小於或約10％、小於或約9％、小於或約8％、小於或約7％、小於或約約6％、小於或約5％、小於或約4％、小於或約3％、小於或約2％、小於或約1％或以下的損耗。
圖5示出了根據本技術的一些具體實施例的基板支撐組件400的部分截面示意圖。如圖所示，組件可包括基板支座405和桿410。接地板417可以與桿耦接。如圖所示，可以在接地板417和加熱器板415之間形成間隙，以限制部件之間的短路。該圖還示出了可以在桿410內形成的多個通道。通道412a可以提供用於通道的連通，諸如淨化氣體或包括真空吸附的其他流體通道，並且可以與基板支座耦合。另外，可以包括通道412b以提供與加熱器板415和第二RF棒435的耦合，加熱器板415可以是陶瓷的，第二RF棒435可以與嵌入式電極耦合。熱電偶440也可以併入底座內，以在操作期間提供準確的溫度測量。
如前所述，本基板支撐組件可以被配置為允許高溫加熱基板。許多習知的底座將矽接合(silicon bonding)用於靜電吸盤（或其他基板支座）上的某些連結。此矽接合通常在高於約200℃的溫度下退化。本技術的具體實施例在基板支座內可以不包括矽接合，並且可以包括部件之間的擴散接合。例如，加熱器板415可以是陶瓷加熱器，諸如陶瓷板。儘管可以使用任何耦合件，但是在一些具體實施例中，通道412b可以是陶瓷軸，第二RF棒435可以通過陶瓷軸設置。通道412b可以包括與加熱器板415的擴散接合，從而產生用以承受高溫處理的接合。因此，根據本技術的具體實施例的底座，可用以加熱基板並且承受大於或大約200℃的溫度，並且可用以加熱基板並且承受大於或大約250℃、大於或等於300°C、大於或大約350°C、大於或大約400°C、大於或大約450°C、大於或大約500°C、大於或大約550°C、大於或等於約600℃、大於或等於約650℃、大於或等於約700℃、或更高的溫度。儘管許多使用嵌入式電阻加熱器的習知底座無法在這些溫度下工作，或者可能會發生耦合擊穿，從而使組件脫耦或翹曲，但本技術可用以在這些範圍內安全作業而不會造成效能或結構退化。
圖6示出了根據本技術的一些具體實施例的基板支撐組件400的部分截面示意圖。該圖示出了加熱器板415和桿410，並且提供了第二RF棒435和熱電偶440的連結的視圖，因為部件可以端接在基板支座內。該圖可以額外示出諸如通過真空連結445的吸附能力，這可以允許將基板或晶圓夾持到基板支座上。另外，如前所述，基板支座可包括電極450，電極450嵌入加熱板內，距基板支撐表面407的一定深度。電極450可以作為RF電極，藉由RF電極可以在基板支撐表面上方的一定空間中產生RF偏壓電漿，並且RF偏壓電漿可以在基板支撐表面與另一電極（諸如氣體分配組件或面板，如前所述）之間形成的包絡內。藉由提供例如可相對於固定面板的基座的垂直平移能力，可以改性電漿窗口以提供對所形成的電漿的更大控制。電極450可以是（或包括）導電材料，諸如銅、鎢、鋁或具有多種外形尺寸的其他材料，包括網格、細絲或其他構造。電極450既可以作為用於產生RF偏壓的電極，也可以作為可接收電流並產生熱量以控制板415的溫度的電阻元件。
在一些具體實施例中，電極450可以被嵌入在加熱板415內，並且可以被嵌入在部件內的一定深度處。例如，在一些具體實施例中，電極450可以以小於或約5 mm的深度嵌入在基板支撐組件的陶瓷加熱器板內。在一些具體實施例中，電極可以被嵌入為更靠近表面，並且可以被嵌入加熱器板中小於或約4 mm、小於或約3 mm、小於或約2 mm、小於或約1 mm的深度、小於或約0.5 mm的深度、或更小的深度。藉由將電極嵌入諸如基板支撐表面的頂表面附近，可以在電極和相對電極之間增加較小的距離，並且可以將基板定位成更靠近電極。
加熱器板還可包括一個或多個塗層，以限制或減少腐蝕和侵蝕中的一者或兩者。因為一些蝕刻可包括物理過程和化學過程，所以基板支座以及基板可以一起暴露於侵蝕性的電漿成分以及腐蝕性的化學蝕刻劑。因此為了保護不受這些材料影響，陶瓷可以塗覆有一種或多種材料。塗層可包括限制腐蝕的材料或限制侵蝕的材料。在一些具體實施例中，可以使用混合塗層，混合塗層可包括第一層和第二層，但是應當理解，根據本技術的一些具體實施例，可以在基板支座上單獨形成任一層。
例如，混合塗層的第一層可以共形地延伸穿過基板支座。第一層可以是抗腐蝕層，抗腐蝕層用以保護基板支座不受包括含鹵素的流出物或蝕刻劑材料的反應性蝕刻劑的影響。在具體實施例中，第一層可以是（或包括）陽極氧化層、化學鍍鎳層、氧化鋁層或鈦酸鋇層。由於抗腐蝕塗層的形成製程，可以實現基板支座405的完全覆蓋。混合塗層的第二層可以是基板上的單個塗層，也可以被包括在第一層的外部。第二層可以包括氧化釔或其他高效能材料，諸如電子束塗層或包括鋁、鋯或其他材料的氧化釔。
如前所述，RF匹配器420可用於向電極450提供RF功率和AC電流。當兩者一起傳遞時，可產生干擾。因此，RF匹配器420可包括被配置為減少干擾的濾波器。其餘附圖將描述RF匹配器420上的變異。圖7示出了根據本技術的一些具體實施例的RF匹配器700的視圖。RF匹配器可以包括其中可以佈置多個部件的殼體705。殼體705可包括多個輸入端口，輸入端口可包括RF功率輸入710和AC功率輸入715。RF匹配器可具有位於兩個入口之間的分隔器720，並且分隔器720可沿著RF匹配器向上保持分離，穿過形成穿過分隔器靠近端子連結處的窗口，諸如其中第一RF棒可從RF匹配器的側壁延伸，諸如通過裝置背面，如圖所示。
可以從RF入口710（其中RF功率源可以與RF匹配器耦合）延伸出RF帶725，RF帶725可以是（或包括）先前描述的任何材料，例如銅。RF帶725可延伸到主耦合件730，主耦合件可以是RF匹配器700和底座之間的耦合件，諸如其中可以延伸第一RF棒。佈線735可以從AC入口715延伸，佈線735將AC功率源耦合到RF濾波器740。然後，佈線745可以從濾波器延伸到初級耦合件730。因此，初級耦合件730可將RF功率和AC功率兩者都連接到RF棒，其中功率可以被傳遞到嵌入在基板支座內的電極。
RF濾波器740可以在濾波器中一起包括電感器和電容器，該電感器和電容器包括一組電感器和電容器。濾波器的組件可能會在作業期間限制RF扼流或RF干擾。如圖中所示，電感器742可以是甜甜圈形狀，並且可以是鐵氧體磁芯，例如對於每個電感器，鐵氧體磁芯可以繞磁芯纏繞多個繞組。鐵氧體可以是錳鋅或鎳鋅鐵（III）氧化物。電感器可以用以提供至少約2 µH的電感，這可以限制感應磁場，並限制元件中的渦流。電容器可以作為接地路徑延伸，並且可以提供大於或約為0.005 µF的電容。圖7的濾波器可以提供較低效率的濾波，並且取決於工作RF功率，濾波器的干擾減小可能受到限制。因此，可以使用額外的配置來增加電感。
圖8示出了根據本技術的一些具體實施例的RF匹配器800的視圖。RF匹配器800可以包括RF匹配器700的許多組件，並且可以包括上述的任何組件和材料。例如，RF匹配800可包括RF輸入810、AC輸入815、分隔器820和初級耦合件830。RF匹配器800還可以包括濾波器840，濾波器840可以包括一組電感器和電容器。電感器842可以包括多個額外的電感器匝，並且可以包括圓柱形設計。電感器可以提供超過10 µH的電感，而電容器可以提供大於0.01 µF的電容。圖8的設計可以在工作條件下提高濾波效率，並且可以減少干擾。
圖9示出了根據本技術的一些具體實施例的RF匹配器900的視圖。RF匹配器900可以包括RF匹配器700與800的許多組件，並且可以包括上述的任何組件和材料。在一些具體實施例中，RF匹配器900可以包括RF匹配器700和RF匹配器800兩者的電感器。例如，RF匹配900可包括RF輸入910、AC輸入915、分隔器920和初級耦合件930。RF匹配器900還可以包括濾波器940，濾波器940可以包括一組初始電感器942，初始電感器942可類似於RF匹配器800的電感器。然後，RF濾波器900可以包括鐵氧體磁芯944，鐵氧體磁芯944可以提供進一步的電感。濾波器可以提供大於或大約20 µH的電感，而電容器可以提供大於或大約0.02 µF的電容。
根據本技術的一些具體實施例的半導體處理系統還可以用脈衝RF功率來操作，此脈衝RF功率可以由RF匹配器提供。脈衝可增強對電漿特性的控制。在可以在腔室的一部分中形成遠端電漿並且可以在腔室上方的空間中形成本地電漿的一些實施例中，可以執行步進式RF脈衝以控制離子能量和自由基密度。
如先前所解釋的，一些蝕刻作業可以包括利用RF偏壓電漿局部地形成破壞性的惰性電漿，這可以產生改性的表面。然後，可以用在遠端電漿區域中形成的反應性化學物質去除這些表面。因此，在一些具體實施例中，可以用離子轟擊來執行改性作業，同時可以從在遠端電漿區域中形成的自由基蝕刻劑中去除離子。調整開關脈衝，諸如調整工作週期或脈衝頻率，可以允許調諧蝕刻劑材料。這可以允許控制離子和自由基的比例。這些變化可以通過同步或非同步脈衝來執行。因此，為了額外的離子產生，RF偏壓電漿的脈衝可以包括較長的開啟週期，並且為了增加蝕刻劑自由基，遠端電漿的脈衝可以包括較長的開啟週期。根據本技術的具體實施例，可以在腔室中執行關於脈衝的這些和任何其他的變異。藉由改善RF匹配器和路徑傳遞，本技術可以在較低的操作功率下允許更穩定的電漿，這可以提供改進的半導體特徵的微調蝕刻。
在上文說明中，為了解釋的目的，闡述了多種細節，以期通透瞭解本科技的各種具體實施例。然而在本發明技術領域中具有通常知識者將顯然瞭解到，特定具體實施例的實作可並不需要這些特定細節的一些（或是需要額外的細節）。
在已揭示了數種具體實施例之後，在本發明技術領域中具有通常知識者將理解到，可使用各種修改、替代性結構與均等範圍，而不脫離所揭示具體實施例的精神。此外，並未說明一些為人熟知的製程與要素，以避免不必要地遮蔽本技術。因此，上文的說明不應被視為限制本技術的範圍。
在提供一系列值的情況下，應當理解，除非上下文另有明確規定，否則還具體揭露了此範圍的上限和下限之間的每個中間值，至下限單位的最小部分。在所述範圍內的任何陳述值或未陳述的介入值與所述範圍內的任何其他陳述或介入值之間的任何較小範圍都包括在內。這些較小範圍的上限和下限可以獨立地包括在此範圍內或排除在此範圍內，且包含上下限之一者、兩者、或皆不包含的較小範圍中的每一範圍也被包含在本技術內，且受制於所陳述範圍中任何特別排除的限制。在所陳述的範圍包含上下限之一者或兩者時，也包含了排除了這些上下限之任一者或兩者的範圍。
說明書與附加申請專利範圍中所使用的單數形式「一(a)」、「一(an)」以及「該」，包含複數的參照物，除非背景內容清楚表示並非如此。因此，例如，對「一材料」的引用，包含複數個此種材料，且對於「此通道」的引用，包含對於一或更多種通道的引用以及在本發明技術領域中具有通常知識者所能知的均等範圍，諸如此類。
此外，本說明書和下列申請專利範圍中使用的詞語「包含(comprise(s))」、「包含(comprising)」、「含有(contain(s))」、「含有(containing)」、「包括(include(s))」和「具有(including)」，意為指明所陳述的特徵、整數、組件、或步驟的存在，但他們不排除存在或添加一個或多個其他特徵、整數、組件、作業、步驟、或組。
100:處理系統 102:前開式晶圓傳送盒(FOUPs) 104:機械臂 106:固持區域 108a-f:基板處理腔室 109a-c:串聯部分 110:機械臂 200:處理腔室 201:遠端電漿系統 203:冷卻板 205:氣體入口組件 210:流體供應系統 214:上板 215:電漿區域 216:下板 217:面板 218:體積 219:流體通道 220:絕緣環 221:流體通道 223:離子抑制器 225:噴淋頭 233:基板處理區域 240:電源供應器 253:詳細視圖 255:基板 258:供應區域 259:孔 265:基板支座 325:噴淋頭 365:通孔 375:小孔 400:基板支撐組件 403:腔室底部 405:基板支座 407:基板支撐表面 410:桿 412:內部通道 412a:通道 412b:通道 413:螺紋輪廓 414:螺紋機構 415:加熱器板 417:接地板 420:RF匹配器 425:RF棒 430:束棒 435:第二RF棒 440:束棒 445:真空連結 450:電極 700:RF匹配器 705:殼體 710:RF功率輸入 715:AC功率輸入 720:分隔器 725:RF帶 730:初級耦合件 735:佈線 740:RF濾波器 742:電感器 745:佈線 800:RF匹配器 810:RF輸入 815:AC輸入 820:分隔器 830:初級耦合件 840:濾波器 842:電感器 900:RF匹配器 910:RF輸入 915:AC輸入 920:分隔器 930:初級耦合件 940:濾波器 942:初始電感器 944:鐵氧體磁芯
參照說明書的其餘部分與圖式，可進一步理解所揭示具體實施例的本質與優點。
圖1示出了根據本技術的一些具體實施例的示例性處理工具的一個具體實施例的俯視圖。
圖2A示出了處理腔室的一個具體實施例的示意性截面圖，其中可以找到根據本技術的一些具體實施例的底座。
圖2B示出了根據本技術的一些實施例的圖2A所示的處理腔室的一部分的詳細視圖。
第3圖圖示根據本技術的具體實施例的示例性噴淋頭的仰視平面圖。
圖4示出了根據本技術的一些具體實施例的基板支撐組件的透視截面示意圖。
圖5示出了根據本技術的一些具體實施例的基板支撐組件的截面示意圖。
圖6示出了根據本技術的一些具體實施例的基板支撐組件的部分截面示意圖。
圖7示出了根據本技術的一些具體實施例的RF匹配的示意圖。
圖8示出了根據本技術的一些具體實施例的RF匹配的示意圖。
圖9示出了根據本技術的一些具體實施例的RF匹配的示意圖。
包括數個圖式以作為示意圖。應瞭解到圖示係用於說明，且不應被視為按比例繪製，除非特定說明其為按比例繪製。此外，作為示意圖，提供圖式以幫助理解，且可不包含相較於實際呈現的所有態樣或資訊，並可包含額外或誇示的內容以供說明。
在附加圖式中，類似的組件及（或）特徵可具有相同的元件符號。再者，相同類型的各個組件，可由元件符號之後的字母來分辨，此字母分辨類似的組件。若說明書中僅使用了首個元件符號，則其說明可適用於具有相同的首個元件符號的類似組件之任意者，不論其字尾字母為何。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
400:基板支撐組件
403:腔室底部
405:基板支座
407:基板支撐表面
410:桿
412:內部通道
413:螺紋輪廓
414:螺紋機構
415:加熱器板
417:接地板
420:RF匹配器
425:RF棒
430:束棒
435:第二RF棒

Claims (19)

  1. 一種半導體處理系統，包含：一基板支撐組件，該基板支撐組件具有一基板支撐表面，該基板支撐組件包含：一陶瓷加熱器，該陶瓷加熱器界定該基板支撐表面；一接地板，該陶瓷加熱器放置在該接地板上；一桿，該接地板耦接至該桿；一電極，該電極嵌入該陶瓷加熱器於距離該基板支撐表面的一深度處；一RF匹配器，該RF匹配器經配置以通過該桿提供一AC電流與一RF功率至該電極，其中該RF匹配器沿著該桿與該基板支撐組件耦接，且其中該基板支撐組件與RF匹配器可在該半導體處理系統內垂直平移；以及一RF棒，該RF棒延伸於該RF匹配器與該基板支撐組件之間。
  2. 如請求項1所述之半導體處理系統，其中該電極嵌入該陶瓷加熱器處距離該基板支撐表面的該深度為少於或約5mm。
  3. 如請求項1所述之半導體處理系統，其中該基板支撐組件經配置以將一基板加熱至大於或約 200℃的一溫度。
  4. 如請求項1所述之半導體處理系統，其中該基板支撐表面塗覆有一抗電漿材料，該抗電漿材料包含氧化釔。
  5. 如請求項1所述之半導體處理系統，該半導體處理系統進一步包含一第二RF棒，該第二RF棒放置在設置於該桿內的一陶瓷軸內，並與該陶瓷加熱器擴散接合。
  6. 如請求項1所述之半導體處理系統，其中該基板支撐組件在該RF棒與該電極之間包含少於十個耦合件。
  7. 如請求項1所述之半導體處理系統，其中該RF匹配器包含一RF帶，該RF帶使一RF功率源與該RF棒耦接。
  8. 如請求項1所述之半導體處理系統，其中該RF匹配器包含一RF濾波器，該RF濾波器使一AC功率源與該RF棒耦接。
  9. 如請求項8所述之半導體處理系統，其中該RF濾波器包含一電感器與一電容器。
  10. 如請求項9所述之半導體處理系統，其中該電感器包含一鐵氧體磁芯。
  11. 如請求項9所述之半導體處理系統，其中 該電感器提供至少2μH。
  12. 如請求項1所述之半導體處理系統，其中該RF匹配器經配置以提供一脈衝RF功率，且其中該電極經配置以在該基板支撐組件上方在該半導體處理系統內的一體積中產生一RF偏壓電漿。
  13. 一種基板支撐組件，該基板支撐組件具有一基板支撐表面，該基板支撐組件包含：一陶瓷加熱器，該陶瓷加熱器界定該基板支撐表面；一接地板，該陶瓷加熱器放置在該接地板上；一桿，該接地板耦接至該桿；一電極，該電極嵌入該陶瓷加熱器於距離該基板支撐表面的一深度處，其中該電極經配置以在該基板支撐組件上方的一體積中產生一RF偏壓電漿；一RF匹配器，該RF匹配器經配置以透過該桿提供一AC電流與一RF功率至該電極；以及一RF棒，該RF棒延伸於該RF匹配器與該基板支撐組件之間。
  14. 如請求項13所述之基板支撐組件，其中該RF匹配器經配置以提供低於或約100W的一電漿功率至該電極。
  15. 如請求項13所述之基板支撐組件，其中該 RF匹配器包含一RF帶，該RF帶使一RF功率源與該RF棒耦接。
  16. 如請求項15所述之基板支撐組件，其中該RF匹配器包含一RF濾波器，該RF濾波器使一AC功率源與該RF棒耦接。
  17. 如請求項16所述之基板支撐組件，其中該RF濾波器包含一電感器與一電容器。
  18. 如請求項13所述之基板支撐組件，其中該基板支撐組件經配置以將一基板加熱至大於或約400℃的一溫度。
  19. 一種半導體處理系統，包含：一基板支撐組件，該基板支撐組件具有一基板支撐表面，該基板支撐組件包含：一陶瓷加熱器，該陶瓷加熱器界定該基板支撐表面；一接地板，該陶瓷加熱器放置在該接地板上；一桿，該接地板耦接至該桿；一電極，該電極嵌入該陶瓷加熱器於距離該基板支撐表面的一深度處，其中該電極經配置以在該基板支撐組件上方的一體積中產生一RF偏壓電漿；以及一RF匹配器，該RF匹配器經配置以通過該桿提供 一AC電流與一RF功率至該電極，其中該RF匹配器沿著該桿與該基板支撐組件耦接，其中該RF匹配器經配置以提供低於或約50W的一電漿功率至該電極，其中該RF匹配器與該電極之間的電耦合件之特徵在於在操作時的損耗小於或約1W，且其中該基板支撐組件與RF匹配器可在該半導體處理系統內垂直平移。
TW108133168A 2018-09-17 2019-09-16 高溫rf加熱器座 TWI729495B (zh)

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