CN112740396A - 高温rf加热器底座 - Google Patents

高温rf加热器底座 Download PDF

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Publication number
CN112740396A
CN112740396A CN201980060581.9A CN201980060581A CN112740396A CN 112740396 A CN112740396 A CN 112740396A CN 201980060581 A CN201980060581 A CN 201980060581A CN 112740396 A CN112740396 A CN 112740396A
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substrate support
matcher
support assembly
electrode
plasma
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CN201980060581.9A
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S·朴
D·本杰明森
X·王
D·卢博米尔斯基
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Applied Materials Inc
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Applied Materials Inc
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    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
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    • H01J37/32183—Matching circuits
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Abstract

描述了半导体处理系统，所述半导体处理系统可以包括具有基板支撑表面的基板支撑组件。示例性的基板支撑组件可包括限定基板支撑表面的陶瓷加热器。组件可包括接地板，陶瓷加热器安置在接地板上。组件可包括与接地板耦接的杆。组件可包括电极，电极嵌入在陶瓷加热器内距离基板支撑表面的一定深度处。腔室或系统还可包括RF匹配器，RF匹配器被配置成通过杆向电极提供AC电流与RF功率。RF匹配器可沿着杆与基板支撑组件耦接。基板支撑组件和RF匹配器可以在半导体处理系统内垂直平移。

Description

高温RF加热器底座
相关申请的交叉引用
本申请案要求于2018年9月17日提交的美国专利申请第16/132,806号的优先权，所述申请的全部内容出于所有目的以其整体结合于此。
技术领域
本技术涉及用于半导体制造的部件与设备。更具体地，本技术涉及基板底座组件和其他半导体处理设备。
背景技术
通过在基板表面上产生复杂图案化的材料层的工艺，使集成电路成为可能。在基板上产生图案化材料需要用于形成和去除材料的受控方法。发生这些工艺的温度可直接影响最终产品。在处理期间，通常用支撑基板的组件来控制和维持基板温度。此外，可形成基板水平的等离子体，以产生可以在基板处理中使用的自由基流出物。随着基板处理变得更加复杂，许多等离子体操作在损坏结构的功率水平发生，并且可能无法提供对等离子体特性的充分控制，从而导致效能变化。根据变化的程度，可能无法在整个基板表面上均匀地执行工艺，并且，由于应用产生的不一致性，可能发生装置故障。
另外，容纳在半导体处理腔室内的结构可能会受到腔室内执行的工艺的影响。例如，在腔室内产生的等离子体流出物可能轰击或以其他方式与其他腔室部件相互作用，这可能导致腐蚀或侵蚀。
因此，由于这些和其他的原因，需要半导体处理腔室内的改进的设备和组件。本技术解决了这些与其他的需求。
发明内容
描述了半导体处理系统，所述半导体处理系统可以包括具有基板支撑表面的基板支撑组件。示例性的基板支撑组件可包括限定基板支撑表面的陶瓷加热器。组件可包括接地板，陶瓷加热器安置在接地板上。组件可包括与接地板耦接的杆。组件可包括电极，电极嵌入在陶瓷加热器内距离基板支撑表面的一定深度处。腔室或系统还可包括RF匹配器，RF匹配器被配置成通过杆向电极提供AC电流与RF功率。RF匹配器可沿着杆与基板支撑组件耦接。基板支撑组件和RF匹配器可以在半导体处理系统内垂直平移。
在一些实施例中，电极嵌入在陶瓷加热器中距离基板支撑表面的深度可为少于或约5mm。基板支撑组件可被配置成将基板加热至大于或约200℃的温度。基板支撑表面可涂覆有抗等离子体材料，抗等离子体材料包括氧化钇。处理系统可进一步包括在RF匹配器与基板支撑组件之间延伸的RF棒。处理系统可进一步包括第二RF棒，第二RF棒定位在设置在杆内的陶瓷轴内，并与陶瓷加热器扩散接合(diffusion bonded)。基板支撑组件可在RF棒与电极之间包括少于十个耦合件。RF匹配器可包括将RF功率源与RF棒耦接的RF带。RF匹配器可包括将AC功率源与RF棒耦接的RF滤波器。RF滤波器可包括电感器和电容器。电感器可以是或包括铁氧体磁芯。电感器可提供至少2μH的电感。RF匹配器可以被配置为提供脉冲RF功率。电极可被配置成在半导体处理系统内在基板支撑组件上方的体积中产生RF偏压等离子体。
本技术的一些实施例还可包括具有基板支撑表面的基板支撑组件。基板支撑组件可包括限定基板支撑表面的陶瓷加热器。基板支撑组件可包括接地板，陶瓷加热器安置在接地板上。基板支撑组件可包括与接地板耦接的杆。基板支撑组件可包括电极，电极嵌入在陶瓷加热器内距离基板支撑表面的一定深度处。电极可被配置成在基板支撑组件上方的体积中产生RF偏压等离子体。基板支撑组件还可包括RF匹配器，RF匹配器被配置成通过杆向电极提供AC电流与RF功率。
在一些实施例中，RF匹配器可被配置成向电极提供低于或约100W的等离子体功率。RF匹配器可包括将RF功率源与RF棒耦接RF带，RF棒在RF匹配器与基板支撑组件之间延伸。RF匹配器可包括将AC功率源与RF棒耦接的RF滤波器。RF滤波器可包括电感器和电容器。基板支撑组件可被配置成将基板加热至大于或约400℃的温度。
本技术的一些实施例还可以包括半导体处理系统。系统可以包括具有基板支撑表面的基板支撑组件。基板支撑组件可包括限定基板支撑表面的陶瓷加热器。基板支撑组件可包括接地板，陶瓷加热器安置在接地板上。基板支撑组件可包括与接地板耦接的杆。基板支撑组件还可包括电极，电极嵌入在陶瓷加热器内距离基板支撑表面的一定深度处。电极可被配置成在基板支撑组件上方的体积中产生RF偏压等离子体。系统还可包括RF匹配器，RF匹配器被配置成通过杆向电极提供AC电流与RF功率。RF匹配器可沿着杆与基板支撑组件耦接。RF匹配器可被配置成向电极提供低于或约50W的等离子体功率。RF匹配器与电极之间的电耦合件由在操作中的损耗为小于或约1W来表征。基板支撑组件与RF匹配器可在半导体处理系统内垂直平移。
这种技术可提供优于常规设备的数个益处。例如，根据本技术的一些实施例的组件可以能够在比常规装置更高的温度下操作。另外，本技术的系统可以在低功率下产生稳定的等离子体，从而提供了比常规装置增加的控制。结合以下描述与附图更详细地描述这些与其他的实施例以及它们的许多优点与特征。
附图说明
参照说明书的其余部分与附图，可实现对所公开的实施例的本质与优点的进一步理解。
图1示出了根据本技术的一些实施例的示例性处理工具的一个实施例的俯视平面图。
图2A示出了处理腔室的一个实施例的示意性截面图，在所述处理腔室中可以找到根据本技术的一些实施例的底座。
图2B示出了根据本技术的一些实施例的图2A所示的处理腔室的一部分的详细视图。
图3示出根据本技术的实施例的示例性喷头的仰视平面图。
图4示出了根据本技术的一些实施例的基板支撑组件的透视截面示意图。
图5示出了根据本技术的一些实施例的基板支撑组件的截面示意图。
图6示出了根据本技术的一些实施例的基板支撑组件的部分截面示意图。
图7示出了根据本技术的一些实施例的RF匹配器的示意图。
图8示出了根据本技术的一些实施例的RF匹配器的示意图。
图9示出了根据本技术的一些实施例的RF匹配器的示意图。
包括若干图式作为示意图。应理解，附图用于说明目的，并且不应被认为是按比例绘制，除非特别说明为按比例绘制。此外，作为示意图，提供附图以帮助理解，并且可不包括与实际表示相比的所有方面或信息，并可包括用于说明目的的额外或放大的材料。
在附图中，类似的部件和/或特征可具有相同的附图标记。此外，相同类型的各种部件可通过在附图标记后跟随在类似部件之间进行区分的字母来加以区分。如果说明书中仅使用了第一附图标记，则其描述可适用于具有相同的第一附图标记的类似部件中的任何一个部件而不论字母如何。
具体实施方式
随着装置特征持续减小尺寸和增加复杂性，材料的受控去除变得越来越重要。一种去除方法涉及在多部分蚀刻工艺中顺序地去除薄材料层。一个这样的蚀刻工艺可包括通过使材料与惰性等离子体流出物接触来改性要去除的特征或材料的表面，这可损坏材料的键合，并且可以促进随后的化学工艺中的去除，这可以在高温下执行。改性操作可以包括形成晶片或基板水平的等离子体，这允许轰击暴露的特征和材料。使用一些工艺以去除材料薄层，诸如数埃(Angstrom)或数纳米的材料，并且因此可寻求控制和最小化去除。
许多常规的等离子体系统无法使用底座或基板支撑件作为热电极以在基板水平产生受控的、低水平的偏压等离子体。由于等离子体源和匹配电路的限制，这些技术无法一致地且充分地在低功率下维持等离子体。复杂的耦合件和系统可产生对于低功率等离子体而言太大的损耗。另外，可以使用相同的耦合件和材料来为底座组件上或底座组件内的电阻加热器输送电流。电流分量可受到等离子体功率的干扰，并可发生进一步损耗。另外，取决于底座配置，底座内的耦合件可能不允许在高温下操作，这可能会损坏在吸盘上的接合。
本技术的实施例通过使用可使底座内的耦合件最小化的特定部件和配置来克服这些和其他的问题。另外，在RF匹配器中并入额外的滤波器可以减少噪声，从而进一步减少损耗和干扰。最后，在底座中使用的材料可包括被选择为限制界面接合损伤的材料，否则界面接合损伤可能在较高温度的操作条件下发生。在描述了其中可以布置根据本技术的一些实施例的底座的示例性系统之后，本公开内容将描述各种基板支撑组件的数种特征。
图1示出根据实施例的具有沉积、蚀刻、烘烤与固化腔室的处理系统100的一个实施例的俯视平面图。在附图中，一对前开式标准舱(FOUP)102供应各种尺寸的基板，所述基板由机械臂104接收并放入低压保持区域106中，然后放入定位在串联区段109a-c中的基板处理腔室108a-f中的一个基板处理腔室。可使用第二机械臂110以将基板晶片从保持区域106运输到基板处理腔室108a-f并返回。每个基板处理腔室108a-f可被配备成执行各种基板处理操作，包括本文所描述的干式蚀刻工艺，以及循环层沉积(CLD)、原子层沉积(ALD)、化学气相沉积(CVD)、物理气相沉积(PVD)、蚀刻、预清洗、脱气、定向以及其他的基板工艺。
基板处理腔室108a-f可包括一个或多个系统部件，以用于对基板晶片上的介电薄膜进行沉积、退火、固化和/或蚀刻。在一个配置中，可使用两对处理腔室(例如108c-d与108e-f)在基板上沉积介电材料，并可使用第三对处理腔室(例如108a-b)以蚀刻所沉积的介电质。在另一配置中，可将全部三对腔室(例如108a-f)配置成在基板上蚀刻介电薄膜。可在与不同实施例中示出的制造系统分离的(多个)腔室中执行所描述的工艺的任何一个或多个工艺。应理解，系统100构想到用于介电薄膜的沉积、蚀刻、退火与固化腔室的额外配置。
图2A示出示例性处理腔室系统200的截面图，处理腔室系统200具有在处理腔室内划分的等离子体生成区域。在膜蚀刻(例如，氮化钛、氮化钽、钨、硅、多晶硅、氧化硅、氮化硅、氮氧化硅、碳氧化硅等)期间内，工艺气体可通过气体入口组件205流入第一等离子体区域215中。远程等离子体系统(RPS)201可以可选地包括在系统中，并且可处理第一气体，第一气体随后行进通过气体入口组件205。入口组件205可包括两个或更多个不同的气体供应通道，其中第二通道(未示出)可绕过RPS 201(如果包括的话)。
示出冷却板203、面板217、离子抑制器223、喷头225与基板支撑件265(其上设置有基板255)，并且可根据实施例而包括这些部件中的每一者。底座265可具有热交换通道，热交换流体通过热交换通道流动以控制基板温度，这可在处理操作期间操作以加热和/或冷却基板或晶片。底座265的晶片支撑板(可包括铝、陶瓷或其组合)还可使用嵌入式电阻加热器元件来电阻地加热，以便达到相对较高的温度，诸如从高达或约100℃至高于或约1100℃。
面板217可以是金字塔形、圆锥形或具有扩展到宽的底部的窄的顶部的另一类似结构。此外如图所示，面板217可以是平的，并且包括用于分配工艺气体的多个贯通通道。取决于RPS 201的使用，等离子体产生气体和/或等离子体激发物质可穿过面板217中的多个孔(如图2B所示)，以更均匀地输送到第一等离子体区域215中。
示例性配置可包括使气体入口组件205通向由面板217从第一等离子体区域215分隔的气体供应区域258，使得气体/物质流过面板217中的孔进入第一等离子体区域215。可选择结构和操作特征，以防止等离子体从第一等离子体区域215显著回流到供应区域258、气体入口组件205和流体供应系统210中。面板217或腔室的导电顶部以及喷头225，被示出为具有位于特征之间的绝缘环220，绝缘环220允许将AC电位相对于喷头225和/或离子抑制器223施加到面板217。绝缘环220可以定位在面板217与喷头225和/或离子抑制器223之间，使得能够在第一等离子体区域中形成电容耦合等离子体(CCP)。挡板(未示出)可附加地位于第一等离子体区域215中，或以其他方式与气体入口组件205耦接，以影响通过气体入口组件205进入区域的流体流动。
离子抑制器223可包括在整个结构中限定的多个孔隙(aperture)的板或其他几何形状，所述多个孔隙配置成抑制离子带电物质从第一等离子体区域215迁移出来，同时允许不带电的中性或自由基物质通过离子抑制器223进入抑制器与喷头之间的活化气体输送区域。在实施例中，离子抑制器223可包括具有各种孔隙配置的多孔板。这些不带电荷的物质可包括通过孔隙以较低反应性的载气输送的高反应性物质。如上所述，可减少离子物质通过孔隙的迁移，并且在一些情况下可完全抑制离子物质通过孔隙的迁移。控制通过离子抑制器223的离子物质的量可有利地提供对与下面的晶片基板接触的气体混合物的增加的控制，这进而可增加对气体混合物的沉积和/或蚀刻特性的控制。例如，对气体混合物的离子浓度的调整可显著改变气体混合物的蚀刻选择性(例如，SiNx：SiOx蚀刻比、Si：SiOx蚀刻比等)。在执行沉积的替代实施例中，这也可以改变对于介电材料的保形到可流动样式的沉积的平衡。
离子抑制器223中的多个孔隙可被配置成控制活化气体(即离子、自由基和/或中性物质)通过离子抑制器223。例如，可控制孔的长宽比、或孔的直径与长度比和/或孔的几何形状，使得通过离子抑制器223的活化气体中的离子带电物质的流动减少。离子抑制器223中的孔可包括面对等离子体激发区域215的锥形部分和面对喷头225的圆柱形部分。圆柱形部分可被成形和尺寸设计成控制通向喷头225的离子物质的流动。也可将可调节的电偏压施加到离子抑制器223上作为控制离子物质通过所述抑制器的流动的附加手段。
离子抑制器223可起到减少或消除从等离子体生成区域行进到基板的离子带电物质的量的作用。不带电的中性和自由基物质仍然可以通过离子抑制器中的开口来与基板反应。应当注意，在实施例中可以不执行将围绕基板的反应区域中的离子带电物质完全消除。在某些情况下，离子物质旨在到达基板以便执行蚀刻和/或沉积工艺。在这些情况下，离子抑制器可帮助将反应区域中离子物质的浓度控制在有助于工艺的水平。
喷头225与离子抑制器223的组合可允许存在于第一等离子体区域215中的等离子体避免直接激发基板处理区域233中的气体，同时仍然允许被激发的物质从腔室等离子体区域215行进到基板处理区域233中。以这种方式，腔室可被配置成防止等离子体接触被蚀刻的基板255。这可以有利地保护在基板上图案化的各种复杂结构和膜，如果所述各种复杂结构和膜与所产生的等离子体直接接触，则可能损坏、移位或以其他方式翘曲。另外，当允许等离子体接触基板或接近基板水平时，氧化物物质蚀刻的速率可以增加。因此，如果材料的暴露区域是氧化物，则可以通过保持等离子体远离基板来进一步保护此材料。
处理系统可进一步包括与处理腔室电耦合的电源240，以向面板217、离子抑制器223、喷头225和/或底座265提供电力，以在第一等离子体区域215或处理区域233中产生等离子体。取决于所执行的工艺，电源可被配置成向腔室输送可调节的功率量。这样的配置可以允许将在正在执行的工艺中使用可调谐等离子体。与通常具有开启或关闭功能的远程等离子体单元不同，可调谐等离子体可被配置成向等离子体区域215输送特定量的功率。这进而可以允许开发特定的等离子体特性，使得前驱物可以以特定方式解离以增强由这些前驱物产生的蚀刻轮廓。
可以在喷头225上方的腔室等离子体区域215中或者在喷头225下方的基板处理区域233中点燃等离子体。等离子体可以存在于腔室等离子体区域215中，以从例如含氟前驱物或其他前驱物的流入中产生自由基前驱物。可将通常在射频(RF)范围内的AC电压施加在处理腔室的导电顶部(诸如面板217)和喷头225和/或离子抑制器223之间，以在沉积期间点燃腔室等离子体区域215中的等离子体。RF电源可产生13.56MHz的高RF频率，但是也可以单独产生其他频率或者与13.56MHz频率组合产生其他频率。
图2B示出影响通过面板217的处理气体分布的特征的详细视图253。如图2A与图2B所示，面板217、冷却板203和气体入口组件205相交以限定气体供应区域258，工艺气体可以从气体入口205输送到气体供应区域258中。气体可以填充气体供应区域258并且通过面板217中的孔隙259流到第一等离子体区域215。孔隙259可被配置成以基本上单向的方式引导流动，使得工艺气体可以流入处理区域233中，但是可以部分地或完全地防止工艺气体在穿过面板217之后回流到气体供应区域258中。
用于在处理腔室部分200中使用的气体分配组件(诸如喷头225)可以被称为双通道喷头(DCSH)，并且在图3中描述的实施例中另外详述。双通道喷头可提供蚀刻工艺，所述蚀刻工艺允许蚀刻剂在处理区域233之外的分离，以在被输送到处理区域中之前提供与腔室部件以及彼此之间的有限的相互作用。
喷头225可包括上板214和下板216。所述板可彼此耦接以在板之间限定体积218。板的耦接可使得提供穿过上板和下板的第一流体通道219，以及穿过下板216的第二流体通道221。形成的通道可被配置成提供仅经由第二流体通道221的从体积218穿过下板216的流体通路，并且第一流体通道219可以与板和第二流体通道221之间的体积218流体隔离。可通过气体分配组件225的侧面流体通入体积218。
图3为根据实施例的与处理腔室一起使用的喷头325的仰视图。喷头325可对应于图2A中所示的喷头225。示出第一流体通道219的视图的通孔365可具有多种形状和构造，以便控制和影响前驱物通过喷头225的流动。示出第二流体通道221的视图的小孔375可以基本上均匀地分布在喷头的表面上、甚至在通孔365之间，并且可以有助于在前驱物离开喷头时提供比其他配置更均匀的前驱物混合。
先前讨论的腔室以及可以在其中执行等离子体或非等离子体操作的任何其他腔室，可以包括可以用于执行示例性方法的额外基板支撑组件，所述示例性方法包括如前所述的蚀刻方法。转到图4，图4示出了根据本技术的一些实施例的基板支撑组件400的透视截面图。支撑组件400可包括基板支撑件405和杆410。基板支撑件405可限定基板支撑表面407，基板支撑表面407被配置成在半导体处理操作期间支撑基板。例如，基板支撑表面407可以由金属(诸如铝)或陶瓷或其他材料制成，并且可以用提供改善的耐腐蚀性、改善的与基板的接触或()减少的来自等离子体流出物的侵蚀的其他材料进行处理或涂覆。
杆410可以与基板支撑表面407相对地附接到基板支撑件405。杆410可包括一个或多个内部通道412，内部通道412被配置成输送和接收温度受控的流体、加压流体、气体，以及提供用于包括热电偶、棒和其他连接物品的部件的导管。基板支撑件可包括多个部件，并且可包括加热器板415，加热器板415可以是陶瓷加热器或任何其他类型的导电材料。加热器板415可以包括嵌入式电极，将在下面进一步描述所述嵌入式电极，并且所述嵌入式电极可以接收用于加热器415的温度控制的电流。另外，基板支撑件可包括接地板417，加热器板415可以定位在接地板417上。接地板417可以与杆410耦接，并且可以与嵌入在加热器板内的电极电隔离。例如，因为电流可以被递送到电极，所以加热器415(可以是如前所述的陶瓷)可以作为绝缘体来操作以限制来自电极的短路。
杆410的一部分可以是带螺纹的，或者可以包括螺纹轮廓413，螺纹轮廓413可以允许基板支撑组件400使用机动化且具有类似螺纹的机构414垂直地上下平移。提供垂直平移可通过允许减小限定等离子体处理区域的底座与相对的电极之间的间隙来提供许多益处。通过调节等离子体窗口，可以在处理期间提供更多的控制。许多常规的支撑组件、尤其是具有RF等离子体能力的那些支撑组件可固定在适当位置，并且不易(not amenable)移动，这可能需要额外的耦合，或者基于需要固定耦合的单独定位的等离子体部件(诸如RF匹配器)而言可能不实用。本技术通过将许多相关联的部件与可移动底座耦接来允许可调节的等离子体窗口。这些装置可以与底座本身一起移动，这可以允许以其他方式固定的部件的移动。
基板支撑组件400可附加地包括RF匹配器420，RF匹配器420可与杆410的一部分耦接，诸如在基板支撑组件延伸穿过的腔室底部403下方。RF匹配器420在此图中被示出为空的，但是下面将进一步详细描述RF匹配器中包括的部件。RF匹配器420可以作为用于所递送的RF功率的阻抗匹配网络来操作。通常，匹配网络可以连接在源和负载之间，所述负载可以是嵌入在陶瓷加热器内的电极。电路系统可以被设计和配置为向负载传输尽可能多的功率，同时示出等于源的输出阻抗的复共轭的输入阻抗，例如诸如50欧姆。在低功率系统中，改善RF匹配器可以提高所产生的等离子体的稳定性，并可以减少对通过组成部件呈现的其他源的干扰。RF匹配器420可以被配置为向嵌入式电极提供RF功率。在一些实施例中，RF匹配器420还可以提供用于操作电阻加热元件的电流(诸如AC电流)，所述电阻加热元件也可以是嵌入在陶瓷加热器内的电极。下面将更详细地描述RF匹配器420的设计和配置。
RF匹配器420可以通过杆410向嵌入在加热器板415内的电极提供AC电流和/或RF功率。如图所示，RF匹配器420可以与基板支撑组件耦接，并且可以直接耦接至杆。因此，匹配器可以与底座组件一起移动，从而允许底座的垂直平移而不会使通过组件的RF路径复杂化。可以将RF发生器(未示出)连接到RF匹配器，以用于在从约400kHz到约60MHz的各种工作频率下提供RF功率，并且所述工作频率可以包括400kHz、2MHz、13.56MHz、27MHz、40MHz、60MHz以及任何其他包括的频率，包括涵盖在较宽范围内的任何较窄的频率范围。RF匹配器420可以被配置为操作或提供某个等离子体功率，在一些实施例中，这可以具体地是低功率等离子体。例如，5kW的RF匹配器可不能够产生5W的稳定等离子体，而根据本技术的实施例的RF匹配器可被配置成以低功率产生稳定的等离子体。
例如，根据本技术的实施例的RF匹配器420可以被配置为以小于或约1kW的RF等离子体功率进行操作，并且可以被具体地配置为以小于或约500W、小于或约100W、小于或约90W、小于或约80W、小于或约70W、小于或约60W、小于或约50W、小于或约40W、小于或约30W、小于或约20W、小于或约10W、小于或约9W、小于或约8W、小于或约7W、小于或约6W、小于或约5W、小于或约4W、小于或约3W、或更小的RF等离子体功率来进行操作。例如，在一些实施例中，基于由于垂直平移能力所产生的减少的损耗和对腔室内的等离子体窗口的控制，根据本技术的RF匹配器可以在本技术的实施例中产生在约5W至约100W之间的范围内的稳定的等离子体。当产生较低水平功率的等离子体(诸如局部等离子体)时，可在跨基板的特征上发生较小的结构损坏，并且可以提供更多的微调去除。例如，较低的功率可限制在基板表面处的离子渗透，这可限制损坏和去除深度。
RF匹配器420与嵌入式电极之间的耦接可以包括多个部件和耦合件，所述部件和耦合件提供通过底座的RF功率传输路径。然而，在一些实施例中，可以指定部件和路径以减少系统内的耦合件、匝数和其他损耗源。第一RF棒425可以定位在RF匹配器420和组件杆410内，并且可以在RF匹配器420与底座之间延伸。第一RF棒425可以与梁棒(beam rod)430耦接，梁棒430可以是可在第一RF棒425(包括与第一RF棒425耦接的间隙部件)与第二RF棒435之间提供直接或间接耦接的耦合件或其他连接结构。第二RF棒435可延伸穿过杆并进入基板支撑件405，其中第二RF棒435可与嵌入在加热器板415内的电极耦接。在一些实施例中，第二RF棒435可以刚性地向上延伸穿过杆，并且可以是单件或多件式部件。所述部件中的任何部件都可以导电，并旨在最大程度使通过系统的损耗最小化。
如上所述，在低功率等离子体系统中，损耗可能是巨大的。例如，在3kW系统中，占1W损耗的损耗可能算是很优秀，因为损耗不到1％。但是，在提供5W等离子体功率的系统中，来自耦合件和材料的1W损耗是20％损耗，这可限制等离子体的稳定性，并可引起许多性能问题。耦合件、连接和材料均可各自造成损耗以及其他干扰，这将在下面进一步讨论。在一些实施例中，根据本技术的系统可以在RF发生器与并入底座内的电极之间具有少于10个的耦合件，并且操作以在腔室的处理区域内在基板支撑表面上方的体积中产生等离子体。
耦合件可包括通过RF匹配器的耦合件，或可包括RF棒425处的匹配器与基板支撑件内的电极之间的数个耦合件。另外，系统或这些位置中的任何位置可包括少于或约9个耦合件、少于或约8个耦合件、少于或约7个耦合件、少于或约6个耦合件、少于或约5个耦合件、少于或约5个耦合件、少于或约4个耦合件、少于或约3个耦合件、或少于或约2个耦合件，其中发生器或RF匹配器可包括与电极耦接的单个元件。用于RF棒或任何耦合件的材料可包括铜、铝、银、金，这可以包括将这些材料之一镀在较便宜的材料上。另外，系统中使用的电缆可以是50欧姆同轴电缆。从RF匹配器到电极的匝数也可影响损耗，其中匝数增加可增加损耗，并且在一些实施例中，RF传输路径可由在传输路径中从一个部件到下一个部件的少于或约10匝来表征，并在一些实施例中可由小于或约9匝、小于或约8匝、小于或约7匝、小于或约6匝、小于或约5匝、小于或约4匝、小于或约3匝、小于或约2匝、小于或约1匝、或无匝来表征。
结合起来，这些材料以及如下所述的滤波器可以组合以限制系统内的损耗。损耗可相对于RF等离子体的功率输出。例如，1W的损耗可表示100W的等离子体配置中的1％的损耗，但可表示5W的等离子体配置中的20％的损耗。因此，本技术可在操作中产生小于或约10W的损耗，而不论等离子体功率如何，并且可产生小于或约9W、小于或约8W、小于或约7W、小于或约6W、小于或约5W、小于或约4W、小于或约3W、小于或约2W、小于或约1W或更小的损耗。类似地，并且基于操作RF匹配器的特定等离子体功率，系统可以被配置为提供小于或约20％的操作损耗，并且可以提供小于或约18％、小于或约16％、小于或约14％、小于或约12％、小于或约10％、小于或约9％、小于或约8％、小于或约7％、小于或约约6％、小于或约5％、小于或约4％、小于或约3％、小于或约2％、小于或约1％或更小的损耗。
图5示出了根据本技术的一些实施例的基板支撑组件400的局部截面示意图。如图所示，组件可包括基板支撑件405和杆410。接地板417可以与杆耦接。如图所示，可以在接地板417与加热器板415之间形成间隙，以限制部件之间的短路。附图还示出了可以在杆410内形成的多个通道。通道412a可以提供用于通路(诸如净化气体或包括真空吸附的其他流体通道)的连通，并且可以与基板支撑件耦接。另外，可以包括通道412b以提供与加热器板415和第二RF棒435的耦接，加热器板415可以是陶瓷的，第二RF棒435可以与嵌入式电极耦接。热电偶440也可以并入底座内，以在操作期间提供准确的温度测量。
如前所述，本基板支撑组件可以被配置为允许对基板的高温加热。许多常规的底座将硅接合用于静电吸盘(或其他基板支撑件上的某些连结。此硅接合通常在高于约200℃的温度下退化。本技术的实施例可以包括在基板支撑件内没有硅接合，并且可以包括部件之间的扩散接合。例如，加热器板415可以是陶瓷加热器，诸如陶瓷板。尽管可以使用任何耦合件，但是在一些实施例中，通道412b可以是陶瓷轴，第二RF棒435可以通过所述陶瓷轴设置。通道412b可以包括与加热器板415的扩散接合，从而产生配置成承受高温处理的接合。因此，根据本技术的实施例的底座可被配置成加热基板并且承受大于或约200℃的温度，并且可被配置成加热基板并且承受大于或约250℃、大于或等于300℃、大于或约350℃、大于或约400℃、大于或约450℃、大于或约500℃、大于或约550℃、大于或等于约600℃、大于或等于约650℃、大于或等于约700℃、或更高的温度。虽然使用嵌入式电阻加热器的许多常规底座无法在这些温度下工作，或者可能受到耦合击穿，从而可使部件解耦或翘曲，但本技术可被配置成在这些范围内安全地操作而不会造成性能或结构退化。
图6示出了根据本技术的一些实施例的基板支撑组件400的局部截面示意图。附图示出了加热器板415和杆410，并且提供了第二RF棒435与热电偶440的连接的视图，因为部件可以端接在基板支撑件内。附图可以额外示出诸如通过真空连接445之类的吸附能力，这可以允许将基板或晶片夹持到基板支撑件上。另外，如前所述，基板支撑组件可包括电极450，电极450嵌入加热板内距离基板支撑表面407的一定深度处。电极450可以作为RF电极来操作，可通过所述RF电极在基板支撑表面上方的一定空间体积中产生RF偏压等离子体，并且RF偏压等离子体可以在基板支撑表面与另一电极(诸如如前所述的气体分配组件或面板)之间形成的包络内。通过提供例如可相对于固定的面板垂直平移底座的能力，可以修改等离子体窗口以提供对所形成的等离子体的更大控制。电极450可以是或包括具有任何数量的形状因子(包括网格、细丝或其他构造)的导电材料，诸如铜、钨、铝、或其他材料。电极450既可以作为用于产生RF偏压的电极来操作，也可以作为可接收电流并产生热量以控制板415的温度的电阻元件。
在一些实施例中，电极450可以被嵌入在加热板415内，并且可以被嵌入在部件内的一定深度处。例如，在一些实施例中，电极450可以以小于或约5mm的深度嵌入在基板支撑组件的陶瓷加热器板内。在一些实施例中，电极可以被嵌入为更靠近表面，并且可以被嵌入加热器板中小于或约4mm、小于或约3mm、小于或约2mm、小于或约1mm的深度、小于或约0.5mm、或更小的深度。通过将电极嵌入在顶表面(诸如基板支撑表面)附近，可以在电极与相对电极之间增加较小的距离，并且可以将基板定位成更靠近电极。
加热器板还可包括一个或多个涂层，以限制或减少腐蚀和侵蚀中的一者或两者。因为一些蚀刻可包括物理工艺和化学工艺两者，所以基板支撑件以及基板可以一起暴露于侵蚀性的等离子体成分以及腐蚀性的化学蚀刻剂。因此为了保护陶瓷免受这些材料的影响，陶瓷可以涂覆有一种或多种材料。涂层可包括限制腐蚀的材料或限制侵蚀的材料。在一些实施例中，可以使用混合涂层，所述混合涂层可包括第一层和第二层，但是应当理解，根据本技术的一些实施例，可以在基板支撑件上单独形成任一个层。
例如，混合涂层的第一层可以共形地延伸跨过基板支撑件。第一层可以是抗腐蚀层，所述抗腐蚀层被配置成保护基板支撑件免受包括含卤素的流出物或蚀刻剂材料的反应性蚀刻剂的影响。在实施例中，第一层可以是或包括阳极氧化、化学镀镍、氧化铝或钛酸钡。由于抗腐蚀涂层的形成工艺，可以实现基板支撑件405的完全覆盖。混合涂层的第二层可以是基板上的单个涂层，所述第二层也可以被包括在第一层的外部。第二层可以包括氧化钇或其他高性能材料，诸如电子束涂层或包括铝、锆或其他材料的氧化钇。
如先前所解释的，RF匹配器420可用于向电极450提供RF功率和AC电流两者。当两者一起递送时，可产生干扰。因此，RF匹配器420可包括被配置为减少干扰的滤波器。其余附图将描述RF匹配器420的变体。图7示出了根据本技术的一些实施例的RF匹配器700的视图。RF匹配器可以包括壳体705，在壳体705中可以设置多个部件。壳体705可包括多个输入端口，所述输入端口可包括RF功率输入710和AC功率输入715。RF匹配器可具有定位在两个入口之间的分隔器720，并且分隔器720可沿着RF匹配器向上保持分离通过穿过所述分隔器形成的靠近端子连接的窗口，诸如其中第一RF棒可(诸如如图所示通过装置背面)从RF匹配器的侧壁延伸。
可以从RF入口710(其中RF功率源可以与RF匹配器耦接)铺设RF带725，RF带725可以是或包括先前描述的材料中的任何材料，例如诸如铜。RF带725可延伸到主耦合件730，主耦合件730可以是RF匹配器700与底座之间的耦合件，诸如其中第一RF棒可以延伸。可以从AC入口715铺设布线735，从而将AC功率源耦接到RF滤波器740。然后，布线745可以从滤波器延伸到主耦合件730。因此，主耦合件730可将RF功率和AC功率两者都连接到RF棒，其中功率可以被递送到嵌入在基板支撑件内的电极。
RF滤波器740可以在滤波器中一起包括电感器和电容器，所述电感器和电容器包括一组电感器和电容器。滤波器的部件可在操作期间限制RF扼流或RF干扰。如图中所示，电感器742可以是甜甜圈形状，并且可以是铁氧体磁芯，诸如对于每个电感器，铁氧体磁芯可以绕磁芯制造多个绕组。铁氧体可以是锰锌或镍锌铁(III)氧化物。电感器可以操作以提供至少约2μH的电感，这可以限制感应磁场，并限制装置中的涡流。电容器可以作为接地路径延伸，并且可以提供大于或约为0.005μF的电容。图7的滤波器可以提供较低效率的滤波，并且取决于工作RF功率，滤波器在干扰减小方面可能受到限制。因此，可以使用附加的配置来增加电感。
图8示出了根据本技术的一些实施例的RF匹配器800的视图。RF匹配器800可以包括RF匹配器700的许多部件，并且可以包括上述的任何组件和材料。例如，RF匹配器800可包括RF输入810、AC输入815、分隔器820和主耦合件830。RF匹配器800还可以包括滤波器840，滤波器840可以包括一组电感器和电容器。电感器842可以包括电感器的多个额外的匝数，并且可以包括圆柱形设计。电感器可以提供超过10μH的电感，并且电容器可以提供大于0.01μF的电容。图8的设计可以在工作条件下提高滤波效率，并且可以改善干扰减少。
图9示出了根据本技术的一些实施例的RF匹配器900的视图。RF匹配器900可以包括RF匹配器700与RF匹配器800的许多部件，并且可以包括上述的任何部件和材料。在一些实施例中，RF匹配器900可以包括RF匹配器700和RF匹配器800两者的电感器。例如，RF匹配器900可包括RF输入910、AC输入915、分隔器920和主耦合件930。RF滤波器900还可以包括滤波器940，滤波器940可以包括一组初始电感器942，初始电感器942可类似于RF匹配器800的电感器。然后，RF滤波器900可以包括铁氧体磁芯944，铁氧体磁芯944可以提供进一步的电感。滤波器可以提供大于或约20μH的电感，并且电容器可以提供大于或约0.02μF的电容。
根据本技术的一些实施例的半导体处理系统还可以用脉冲RF功率来操作，所述脉冲RF功率可以由RF匹配器提供。脉冲可增强对等离子体特性的控制。在可以在腔室的一个部分中形成远程等离子体并且可以在腔室上方的空间中形成局部等离子体的一些实施例中，可以执行步进式RF脉冲以控制离子能量和自由基密度。
如先前所解释的，一些蚀刻操作可以包括使用RF偏压等离子体局部地形成破坏性的惰性等离子体，这可以产生改性的表面。然后，可以用在远程等离子体区域中形成的反应性化学物质来去除这些表面。因此，在一些实施例中，可以用离子轰击来执行改性操作，同时可以从在远程等离子体区域中形成的自由基蚀刻剂中去除离子。调整开关脉冲(诸如调整占空比或脉冲频率)可以允许调谐蚀刻剂材料。这可以允许对离子和自由基的比例的控制。这些变化可以使用同步或异步脉冲来执行。因此，为了额外的离子产生，RF偏压等离子体的脉冲可以包括较长的开启周期，并且为了增加蚀刻剂自由基，远程等离子体的脉冲可以包括较长的开启周期。根据本技术的实施例，可以在腔室中执行关于脉冲的这些和任何其他的变体。通过改善RF匹配器和路径递送，本技术可以在较低的操作功率下允许更稳定的等离子体，这可以提供改进的半导体特征的微调蚀刻。
在前面的描述中，出于解释的目的，已经阐述了许多细以便提供对本技术的各种实施例的理解。然而，对于本领域技术人员而言，将显而易见的是，某些实施例可以在没有这些细节中的一些细节的情况下或者在具有附加细节的情况下实践。
已公开了数个实施例，本领域技术人员将理解，可使用各种修改、替代构造、以及等同体而不脱离所公开的实施例的精神。另外，许多公知的工艺和要素未被描述以免不必要地模糊本技术。因此，上文的描述不应被视为限制本技术的范围。
在提供值的范围的情况下，应当理解，除非上下文另有明确规定，否则此范围的上限和下限之间的直到下限单位的最小分数的每个中间值也被具体公开。在阐明的范围中的任何阐明的值或未阐明的中间值之间的任何更窄范围以及所述阐明的范围中的任何其他阐明的值或中间值被涵盖。那些较小范围的上限和下限可以独立地包括在所述范围内或排除在此范围外，并且在所述较小范围内包括任一限值、不包括任一限值、或包括两个限值中的每一个范围也涵盖在本发明内，受限于所阐明的范围中任何具体排除的限值。在所阐明的范围包括限值中的一个或两个的情况下，排除这些限值中的任一个或两者的范围也包括在本技术内。
如本文和所附权利要求中所使用的，单数形式的“一个(a)”、“一个(an)”以及“所述(the)”包括复数引用，除非上下文另外明确指出。因此，例如，对“材料”的引用包括多个此类材料，并且对于“通道”的引用包括对本领域技术人员已知的一种或多种通道的引用及其等同物的引用等等。
此外，当在本说明书和以下权利要求中使用时，术语“包括(comprise)”、“包括(comprising)”、“包含(contain)”、“包含(containing)”、“包括(include)”、“包括(including)”和“包括(includes)”旨在指明所阐明的特征、整数、部件、或步骤的存在，但所述术语不排除一个或多个其他特征、整数、部件、步骤、行为或组的存在或添加。

Claims (15)

1.一种半导体处理系统，包括：
基板支撑组件，所述基板支撑组件具有基板支撑表面，所述基板支撑组件包括：
陶瓷加热器，所述陶瓷加热器限定所述基板支撑表面；
接地板，所述陶瓷加热器安置在所述接地板上；
杆，所述接地板耦接至所述杆；
电极，所述电极嵌入在所述陶瓷加热器内距离所述基板支撑表面的一定深度处；以及
RF匹配器，所述RF匹配器被配置成通过所述杆向所述电极提供AC电流与RF功率，其中所述RF匹配器沿着所述杆与所述基板支撑组件耦接，并且其中所述基板支撑组件与RF匹配器在所述半导体处理系统内可垂直平移。
2.如权利要求1所述的半导体处理系统，其中所述电极嵌入在所述陶瓷加热器中距离所述基板支撑表面的所述深度为少于或约5mm。
3.如权利要求1所述的半导体处理系统，其中所述基板支撑组件被配置成将基板加热至大于或约200℃的温度。
4.如权利要求1所述的半导体处理系统，其中所述基板支撑表面涂覆有抗等离子体材料，所述抗等离子体材料包括氧化钇。
5.如权利要求1所述的半导体处理系统，进一步包括RF棒，所述RF棒在所述RF匹配器与所述基板支撑组件之间延伸。
6.如权利要求5所述的半导体处理系统，进一步包括第二RF棒，所述第二RF棒定位在设置在所述杆内的陶瓷轴内，并与所述陶瓷加热器扩散接合。
7.如权利要求5所述的半导体处理系统，其中所述基板支撑组件在所述RF棒与所述电极之间包括少于十个耦合件。
8.如权利要求5所述的半导体处理系统，其中所述RF匹配器包括RF带，所述RF带将RF功率源与所述RF棒耦接。
9.如权利要求5所述的半导体处理系统，其中所述RF匹配器包括RF滤波器，所述RF滤波器将AC功率源与所述RF棒耦接。
10.如权利要求9所述的半导体处理系统，其中所述RF滤波器包括电感器和电容器，其中所述电感器包括铁氧体磁芯，并且其中所述电感器提供至少2μH。
11.如权利要求1所述的半导体处理系统，其中所述RF匹配器被配置成提供脉冲RF功率，并且其中所述电极被配置成在所述半导体处理系统内在所述基板支撑组件上方的体积中产生RF偏压等离子体。
12.一种基板支撑组件，所述基板支撑组件具有基板支撑表面，所述基板支撑组件包括：
陶瓷加热器，所述陶瓷加热器限定所述基板支撑表面；
接地板，所述陶瓷加热器安置在所述接地板上；
杆，所述接地板耦接至所述杆；
电极，所述电极嵌入在所述陶瓷加热器内距离所述基板支撑表面的一定深度处，其中所述电极被配置成在所述基板支撑组件上方的体积中产生RF偏压等离子体；以及
RF匹配器，所述RF匹配器被配置成通过所述杆向所述电极提供AC电流与RF功率。
13.如权利要求12所述的基板支撑组件，其中所述RF匹配器被配置成向所述电极提供低于或约100W的等离子体功率，并且其中所述RF匹配器包括RF带，所述RF带将RF功率源与RF棒耦接，所述RF棒在所述RF匹配器与所述基板支撑组件之间延伸。
14.如权利要求13所述的基板支撑组件，其中所述RF匹配器包括RF滤波器，所述RF滤波器将AC功率源与所述RF棒耦接，并且其中所述RF滤波器包括电感器和电容器。
15.一种半导体处理系统，包括：
基板支撑组件，所述基板支撑组件具有基板支撑表面，所述基板支撑组件包括：
陶瓷加热器，所述陶瓷加热器限定所述基板支撑表面；
接地板，所述陶瓷加热器安置在所述接地板上；
杆，所述接地板耦接至所述杆；
电极，所述电极嵌入在所述陶瓷加热器内距离所述基板支撑表面的一定深度处，其中所述电极被配置成在所述基板支撑组件上方的体积中产生RF偏压等离子体；以及
RF匹配器，所述RF匹配器被配置成通过所述杆向所述电极提供AC电流与RF功率，其中所述RF匹配器沿着所述杆与所述基板支撑组件耦接，其中所述RF匹配器被配置成向所述电极提供低于或约50W的等离子体功率，其中所述RF匹配器与所述电极之间的电耦合件由在操作中的损耗为小于或约1W来表征，并且其中所述基板支撑组件与RF匹配器在所述半导体处理系统内可垂直平移。
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KR102586592B1 (ko) 2023-10-11
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