TW201841205A - 用於電漿均勻度之徑向及方位控制的系統與方法 - Google Patents

用於電漿均勻度之徑向及方位控制的系統與方法 Download PDF

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TW201841205A
TW201841205A TW107102323A TW107102323A TW201841205A TW 201841205 A TW201841205 A TW 201841205A TW 107102323 A TW107102323 A TW 107102323A TW 107102323 A TW107102323 A TW 107102323A TW 201841205 A TW201841205 A TW 201841205A
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processing chamber
waveguide cavity
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小林悟
菅井英夫
尼可萊 卡寧
壽南 朴
托恩 崔恩
迪米奇 路柏曼斯基
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Abstract

一種系統包括處理腔室、界定波導空腔的殼體、和在殼體內的第一導電板。第一導電板面向處理腔室。該系統亦包括可調整第一導電板的至少一位置的一或更多個調整裝置、以及在波導空腔與處理腔室之間的與殼體耦接的第二導電板。電磁輻射可經由第二導電板中的孔從波導空腔傳播到處理腔室中。該系統亦包括密封處理腔室而與波導空腔隔開的介電板、以及將電磁輻射發送到波導空腔中的一或更多個電子設備組。當至少一種處理氣體在腔室內且電磁輻射從波導空腔傳播到處理腔室中時，形成電漿。

Description

用於電漿均勻度之徑向及方位控制的系統與方法
本揭示係在電磁輻射的領域中。更具體言之，揭示了採用波導及相關控制系統以提供在處理腔室中徑向及/或方位控制電漿的實施例。
半導體處理常常產生電漿以產出與半導體晶圓本身或其他處理相關材料（例如，光阻劑）相互作用的離子化及/或能量激發的物質。為了產出及/或維持電漿，一般採用一或更多個射頻（RF）及/或微波產生器來產生振盪電場及/或磁場。亦可採用相同場及/或DC場來將離子化及/或能量激發的物質引導至待處理的半導體晶圓（多個半導體晶圓）。場可產生及/或耦接至腔室中，其中以多種方式產生電漿。各種已知方法常用於匹配電源（RF產生器）的阻抗與負載（電漿），使得來自RF產生器的功率可在無大量功率反射回RF產生器的情況下輸送到電漿。這係出於能量效率以及保護RF產生器的電子部件免遭破壞的原因。特別當採用微波能量時，通常將反射的功率引導至虛擬負載，其中反射的功率作為熱量消散，接著必須移除熱量。因此，反射的功率造成雙重能量浪費：用於產生功率的能量和用於移除廢熱的能量。
在一實施例中，一種系統包括處理腔室、界定波導空腔的殼體、和在殼體內的第一導電板。第一導電板跨波導空腔面向處理腔室。該系統亦包括可調整第一導電板的至少一位置的一或更多個調整裝置、以及在波導空腔與處理腔室之間的與殼體耦接的第二導電板。電磁輻射可經由第二導電板中的孔從波導空腔傳播到處理腔室中。該系統亦包括密封處理腔室而與波導空腔隔開的介電板該介電板，使得當處理腔室抽空時，波導空腔不會被抽空。該系統進一步包括將電磁輻射發送到波導空腔中的一或更多個電子設備組。當至少一種處理氣體在腔室內且電磁輻射從波導空腔傳播到處理腔室中時，形成電漿。
在一實施例中，一種電漿處理系統包括可操作以抽空的處理腔室、用於將一或更多種處理氣體引入處理腔室中的一或更多個處理氣體供應器、界定波導空腔的殼體、及可將電磁輻射發送到波導空腔中的一或更多個電子設備組。一或更多個電子設備組的每個匹配其驅動阻抗與由波導空腔呈現的對電磁輻射的阻抗。第一導電板在殼體內並在波導空腔離處理腔室的遠側上。至少三個調整裝置與第一導電板和殼體耦接。調整裝置可在一位置範圍內調整第一導電板的至少一位置、及第一導電板相對於殼體的傾斜。第二導電板與殼體耦接且插入波導空腔與處理腔室之間。第二導電板其中形成複數個孔以用於允許波導空腔內的電磁輻射經由孔傳播到處理腔室中。介電板密封處理腔室而與波導空腔隔開，使得當處理腔室抽空時，波導空腔不會被抽空。當第一導電板經調整成位置範圍內的特徵模態位置且一或更多個電子設備組將電磁輻射發送到波導空腔中時，波導空腔可支援第一與第二導電板之間的特徵模態。當至少一種處理氣體在腔室內且電磁輻射從波導空腔傳播到處理腔室中時，形成電漿。
在一實施例中，一種用於產生電漿來處理工件的方法包括將一或更多種處理氣體引入處理腔室中。處理腔室至少部分用介電板密封，該介電板能夠支承對應於處理腔室抽空的壓差。該方法亦包括將電磁輻射傳播到波導空腔中，該波導空腔鄰接處理腔室設置。波導空腔至少部分由第一導電板和第二導電板圍界，該第一導電板面向處理腔室且從處理腔室跨波導空腔，該第二導電板在波導空腔與介電板之間。第二導電板形成孔，該等孔允許電磁輻射經由第二導電板、經由介電板而傳播到腔室中。該方法進一步包括點燃來自處理氣體的電漿、以及利用經由第二導電板的孔傳播到處理腔室中的電磁輻射供應功率以維持電漿。
在一實施例中，一種用於在處理腔室中提供電磁輻射以供電給電漿的方法包括將一或更多種處理氣體引入處理腔室中、以及將電磁輻射從至少兩個位置P和Q傳播到波導空腔中，該波導空腔鄰接處理腔室設置。波導空腔與處理腔室分離，使得處理腔室可在不抽空波導空腔的情況下抽空，而波導空腔內的電磁輻射仍可傳播到處理腔室中。位置P和Q以相應角度θp 和θq 設置在波導空腔的周緣四周。電磁輻射以微波頻率ω與旋轉頻率Ω在波導空腔內提供。該方法進一步包括點燃來自處理氣體的電漿、以及藉由從波導空腔傳播到處理腔室中的電磁輻射供應功率以維持電漿。
在一實施例中，一種產生電漿的系統包括可抽空的處理腔室和鄰接處理腔室設置的波導空腔。波導空腔與處理腔室分離，而不阻擋波導空腔內的電磁輻射傳播到處理腔室中。該系統亦包括，用於將一或更多種處理氣體引入處理腔室中的一或更多個處理氣體供應器、及第一電子設備組和第二電子設備組。第一和第二電子設備組的每個將電磁輻射發送到波導空腔中。該系統進一步包括控制器，該控制器將相應的第一和第二輸入波形提供到第一和第二電子設備組的每個。第一和第二輸入波形的每個具有微波頻率ω，並且第一和第二輸入波形具有相應振幅，當由電子設備組放大時，該等振幅向波導空腔內的電磁輻射提供旋轉頻率Ω。當一或更多種處理氣體中的至少一種處理氣體在腔室內且電磁輻射從波導空腔傳播到處理腔室中時，形成電漿。
在一實施例中，一種用於在處理腔室中電漿處理的方法包括將一或更多種處理氣體引入處理腔室中。處理腔室鄰接波導空腔設置，並且波導空腔與處理腔室分離，而不阻擋波導空腔內的電磁輻射傳播到處理腔室中。該方法亦包括將電磁輻射傳播到波導空腔中。電磁輻射以微波頻率ω提供。在波導空腔內供應的功率的第一部分由波導空腔內以橫向電場（TE ）模態共振的電磁輻射的一部分供應。在波導空腔內供應的功率的第二部分由波導空腔內以第二TE 模態共振的電磁輻射的一部分供應。該方法進一步包括點燃來自處理氣體的電漿；以及藉由從波導空腔傳播到處理腔室中的電磁輻射供應功率以維持電漿。
在一實施例中，一種用於在處理腔室中處理工件的方法包括將工件放置在處理腔室中。處理腔室鄰接波導空腔設置。波導空腔與處理腔室分離，而不阻擋波導空腔內的電磁輻射傳播到處理腔室中。該方法亦包括用第一電漿處理工件及利用第二電漿處理工件。第一和第二電漿的每個藉由下列步驟產生：將一或更多種處理氣體引入處理腔室中、將電磁輻射傳播到波導空腔中、點燃來自處理氣體的電漿、及以藉由從波導空腔傳播到處理腔室中的電磁輻射供應功率以維持電漿。用於第一電漿的功率的至少一部分由波導空腔內以第一TE 模態共振的電磁輻射供應，並且用於第二電漿的功率的至少一部分由波導空腔內以第二TE 模態共振的電磁輻射供應。第一TE 模態的階次不同於第二TE 模態。
附加實施例及特徵在以下描述中部分闡述，並且部分將在查閱本說明書時對熟習此項技術者顯而易見或可藉由實踐本發明而瞭解到。本發明的特徵和優點可藉由本說明書中所述的工具、組合和方法來實現並達成。本領域中一般技藝人士在閱讀及理解本揭示時不僅能夠實踐具體描述的概念，亦容易認識到所揭示特徵的替代、等效物、修改、和中間組合，全部上述內容係在本揭示的範疇內。
第1圖示意性示出了根據一實施例的電漿處理系統100的主要元件。系統100經描繪為單個晶圓，半導體晶圓處理系統，但熟習此項技術者將顯而易見本文的技術和原理可應用到用於任何類型工件（例如，不一定為晶圓或半導體的物品）的電漿處理系統。處理系統100包括用於晶圓介面115、使用者介面120、處理腔室130、控制器140和一或更多個電源供應器150的殼體110。處理腔室130包括一或更多個底座135，晶圓介面115可將工件50（例如，晶圓，但可為不同類型的工件）放置在該底座上以用於處理。真空160（例如，一或更多個真空泵）可操作以抽空處理腔室130，且一或更多個氣體供應器155可連接以將處理氣體引入處理腔室130中。一或更多個射頻或微波產生器（RF Gen）165以一或更多個射頻或微波頻率供電而在處理腔室130內產生電漿。（由本文的實施例提供的電磁輻射可在本揭示中被稱為「微波」，儘管如此輻射可在微波、射頻或電磁譜的其他部分內。）RF Gen 165可在系統100外部或內部，且可採取一或更多個電子設備組的形式這將在後文進一步描述。RF Gen 165可在波導空腔167內發送微波，該波導空腔可在處理腔室130上方或下方設置，且在第1圖及第2A圖中圖示為在腔室130上方。波導空腔167可為圓柱形空腔，但這並非嚴格要求。處理腔室130靠近波導空腔167，且由至少一介電材料形成的板169鄰接波導空腔167圍界，該介電材料可透過微波，但不透過空氣或在腔室130中採用的處理氣體。因此，當腔室130抽空時，介電板169可支承波導空腔167與腔室130之間的壓差，而允許波導空腔167內的微波傳播到腔室130中。介電板169可例如由下列形成：耐火材料（多種耐火材料），諸如二氧化矽、氮化矽或中間氮氧化矽化合物；陶瓷（多種陶瓷），諸如氧化鋁、氧化釔等；塑膠（多種塑膠）及/或聚合物（多種聚合物）。在一些實施例中，複數個中空區域形成在介電板169的下表面上。此舉可有助於電漿點燃，特別係在相對高壓力（例如，約1托或更高）或低功率條件下，藉由有助於干擾可形成於介電板169下表面的電漿表面模態。其他結構亦可存在於波導空腔167與處理腔室130之間，如後文論述。
圖示為系統100的部分的元件以實例之方式而非詳盡列出。亦可包括許多其他可能的元件，諸如：氣體及/或真空配管、壓力及/或流量控制器；電極、磁芯及/或其他電磁設備；機械、壓力、溫度、化學、光學及/或電子感測器；觀察及/或其他出入口等，但為了說明清晰而未圖示。為了說明清晰，系統100內的所示元件內部連接和協作亦未圖示。除了RF產生器165之外，其他設施（諸如氣體供應器155、真空160、及/或通用電力170）也可與系統100連接。類似系統100中的所示元件，圖示為與系統100連接的設施意欲為說明性而非詳盡的；其他類型的設施（諸如加熱或冷卻流體、加壓空氣、網絡能力、廢物處置系統等）亦可與系統100連接，但為說明清晰而未圖示。
第2A圖係示出電漿處理系統200的一部分的示意性等角視圖，該電漿處理系統包括波導空腔167、將微波發送到波導空腔167中的微波輸入166、處理腔室130、和其中的工件50。虛線2B-2B’表示第2B圖所示出的截面圖的平面。在系統200中，殼體105界定波導空腔167和處理腔室130，且處理腔室130繞著與波導空腔167的共軸呈實質上徑向對稱。微波從微波輸入166經由微波輸入開口162傳播到波導空腔167中，接著經由導電板137的槽孔168進入處理腔室130中，以提供能量來點燃及/或維持電漿60。導電板137可由例如金屬形成，但亦可由其他導電材料、或用保護性（且未必導電）的材料部分或完全塗覆的導電材料形成。在第2A圖及第2B圖所示的實施例中，波導空腔167由介電板169圍界，該介電板面向導電板137且可與該導電板接觸。介電板169可例如由下列形成：耐火材料（多種耐火材料），諸如二氧化矽、氮化矽或中間化合物（例如，氮氧化矽）；陶瓷（多種陶瓷），諸如氧化鋁、氧化釔等；塑膠（多種塑膠）及/或聚合物（多種聚合物）。導電板137形成槽孔168，該槽孔允許微波經由介電板169傳播而至處理腔室130中。槽孔168例如可形成徑線槽孔天線。底座135經配置以將工件50呈給電漿60而進行處理。處理腔室130可包括埠口及/或機械開口（未圖示），以供插入及/或抽出工件50、引入氣體以形成電漿60、移除電漿及氣態反應產物、感測、觀察等。導電板137的優點在於導電板可係良好熱導體以有助於移除由電漿60和介電板169內的位移電流產生的熱。第2B圖係示出導電板137的示意性俯視平面圖，圖示了經由槽孔168暴露出的介電板169。
第2A圖、第4圖及第6圖至第10圖所示出的處理腔室、波導空腔等的定向係常見的，而非本文的系統操作所需。例如，第2A圖圖示了設置在底座135頂上的工件50（可為晶圓），該底座可為晶圓卡盤，其中至少在傳送操作期間，重力可用於使工件固持在位。因此，在下文描述中，使用術語「高度」應視為意指位置或距離且不一定在垂直方向中。如「垂直」和「頂部」等類似術語不將實施例限定在所示的定向，而應理解為根據實施例可操作的其他定向來修改。
因為壁和系統200的導電板137為等位面，波導空腔167可支援特徵模態-微波傳播模態，其中例如，波導空腔167的高度d1 為波導空腔167內微波的半軸波長的倍數，使得波導空腔167以對應微波頻率共振。亦即，當d1 =m2π/kz 時，特徵模態以波導空腔167的共振頻率形成。在此，軸向波數kz 定義為，其中ω係角頻率（ω=2πf ），f 係微波頻率，m 係正整數，且c 係光速，且κ 係徑向波數，為此空腔側壁上的邊界條件滿足空腔半徑R （亦即，且，其中J’m 係m 階的第一類白塞爾（Bessel）函數，y’mn 係m 階的第二類白塞爾函數）。
例如，在系統200中，當使用2.45 GHz的常見微波頻率時，d1 的一個值為約62 mm，但可根據導電板137上的槽孔的形狀與圖案、材料的細微變化、微波輸入開口162的準確幾何形狀等而變化。致使波導空腔167支援特徵模態的d1 值在本文中可稱作「特徵模態位置」。波導空腔167內的特徵模態有利於最大化從電子設備組輸送到電漿60中的功率，並最小化反射回電子設備組的功率。（介電板169的厚度和處理腔室130的高度亦可經設計成支援處理腔室130以相同微波頻率的特徵模態操作，如後文論述。）
提供具有一厚度及介電常數的介電板169亦可有助於支援在介電板169內以相同頻率共振，從而支援波導空腔167內的特徵模態。這可表示成條件d2 =m2π/kdz ，其中軸向波數kdz 定義為，εd 係介電板169的介電常數（或若介電板169由多種材料形成，則為有效介電常數），m 係任一正整數，且徑向波數κ 如上定義。此條件有幫助的原因係因為點燃電漿60，此有助於在介電板169正下方提供高場強度。電漿60可趨於形成及/或集中在處理腔室130內最靠近介電板169處（在此經由板137耦接的場最強）。此外，儘管腔室130的總有效高度可能並非關鍵，但亦可經選擇以支援處理腔室130的特徵模態操作。此條件可表示成淨「電高度」為所用的微波的半波長的倍數，以最大化整個處理腔室130中的電磁場強度，亦即，。又出於與上文關於波導空腔167所提及者相同的理由，當導電板137、介電板169和處理腔室130具有固定結構時，可能難以確保特徵模態條件。
殼體105的尺寸變化、材料變化等、導電板137內槽孔168的準確構造、電漿60在介電板169底下的分佈、及/或與波導空腔167相關的不對稱特徵（諸如感測器、扣件、出入口等）可使波導空腔167內全域或各處的特徵模態位置的有效值平移。由此，儘管殼體105和導電板137可以d1 定義特徵模態位置的目的來製造，實際值d1 可能不是所要的特徵模態位置。用於調整d1 和本文的空腔及腔室的其他尺寸的設備和方法將在下文結合第4圖至第6圖及第10圖至第12圖揭示。
介電板169的最佳厚度亦可由其他要求主導，諸如成本、大小、重量、機械強度和維持處理腔室130上方的真空密封的能力。處理腔室130可按大小製作以容納直徑高達300 mm或450 mm的工件50（例如，標稱直徑約12英吋或約18英吋的晶圓）。由此，可能需要介電板169來支承遍及面積約0.15 m2 至0.25 m2 的真空壓差，進而在正常大氣壓力下施加約22至40磅的淨力。當介電板169由介電常數約4的耐火材料或介電常數約10的陶瓷形成時，厚度小於約10 mm可能太易碎，而厚度大於約80 mm則可能太貴、大又重。在此示例性範圍內，如上所論述，所用的準確厚度可根據所用的微波輻射的波長和所用的材料的實際介電常數來最佳化。
第3圖係示出用於將微波提供至採用波導的電漿腔室的系統300的主要部件的示意圖。系統300的波導210例如可為第1圖及第2A圖的波導空腔167。通常，系統300在第3圖中由P和Q指示的兩個位置處供電給波導210。位置P和Q一般以共同頻率驅動（藉由後文描述的電子設備組225(1)、225(2)）一相位移，該相位移可對應於波導210周緣四周的P與Q間的角度偏移。座標參考系統圖示於波導210內。軸向方向z 表示沿圓柱軸的距離，該圓柱軸與波導210同心；亦即，方向z 進出第3圖的平面。徑向方向r 表示距圓柱軸的距離。方位方向θ 表示繞著圓柱軸的角度位置。如圖所示，位置P被看作θ 方向的原點。
因此，波導210可被視為雙驅動波導；操作的雙驅動模態提供了源自兩組驅動電子設備而非以雙倍功率操作的單組驅動電子設備的高微波能量密度。使用兩（或更多）組驅動電子設備可係有利的，每組驅動電子設備以比高功率操作的單組低的功率操作。以較高功率操作的電子設備組可需要具有高電壓、電流、或散熱定額的部件，此類部件可能遠比用於較低功率組的部件昂貴或更難以獲得。例如，低成本且高品質的微波場效電晶體（FET）近來已變得可用於本文的電子設備組225，但此類高電壓、電流及/或功率耗散型FET仍保持昂貴或難以獲得。
系統300的操作最好地理解為開始於訊號產生器215，該訊號產生器提供兩個微波訊號220(1)、220(2)，訊號220(1)、220(2)處於相同頻率，但可具有相對於彼此的相位移，該相位移可對應於驅動位置之間的機械偏移。例如，若位置P和Q繞著波導210的周緣彼此相距90度，則標稱相位移應為π/2。測定及控制相位移校正即將在下文論述。在某些實施例中，訊號產生器215可控制訊號320的頻率及/或振幅，以及其相位。控制頻率應用為調諧系統300，使得可在波導210和相鄰處理腔室中建立特徵模態條件。這可用於電子校正波導和腔室尺寸、材料、不對稱腔室特徵等中的難以控制的不規則性，儘管亦可採取機械方式（例如，參見下文第4圖至第6圖及第10圖至第12圖）。控制振幅的應用為提供旋轉模態控制，使得所產生電漿中的局部不規則性可以平滑，如下文進一步論述（例如，參見第13圖、第14圖）。
微波訊號220(1)、220(2)驅動電路，該等電路被稱作第一電子設備組225(1)和第二電子設備組225(2)。每個電子設備組225(1)、225(2)開始於固態放大器230，該固態放大器升壓相應微波訊號220(1)、220(2)的功率以產生放大的微波訊號235(1)、235(2)。如上所論述，固態放大器230可包括一或更多個微波FET。每個放大的微波訊號235(1)、235(2)進入並經過循環器240，該循環器用於保護相應固態放大器230，以免功率自波導210反射。循環器240因此將輸入功率從固態放大器230傳遞到相應調諧器250中，同時將任何反射回虛擬負載245中的功率分流。
調諧器250調整由放大的微波訊號235(1)、235(2)經歷的阻抗，以匹配由部件呈現的阻抗，該等部件諸如同軸轉波導轉換器265、波導210和相鄰處理腔室（例如，第1圖的處理腔室130，第3圖中未圖示）。調諧器250可例如為三極短截線調諧器。放大的調諧訊號接著經過相應同軸轉波導轉換器265，並且在具有輻射孔270（對應於第2A圖示意性標記的微波輸入166，該微波輸入止於微波輸入開口162）的相應波導處進入波導210中。
作為達成可接受阻抗匹配所需調諧的部分，調諧器250可改變向波導210傳遞的訊號相位，使得儘管訊號係在波導210周緣附近具有機械相位移的位置處供應，訊號本身可能不再具有相同的電相位移。例如，若P和Q機械偏移90度，則調諧器可使P與Q處的微波間的相位移平移至除π/2之外的值。因此，可激發不對稱橢圓或線性旋轉模態，而非在波導210中激發對稱圓形旋轉模態。此微波構造的不對稱性可繼而導致相鄰處理腔室（例如第1圖、第2A圖的處理腔室130，其中電漿由波導210中的微波供電）中的處理像差。例如，不對稱微波構造可導致相應地不對稱電漿，且因此導致電漿蝕刻深度的局部歪斜。
解決上述不對稱類型的一種方式為對微波訊號220(1)與220(2)間的相位延遲、且接著放大的微波訊號235(1)與235(2)間的相位延遲提供電校正。例如，雙相位訊號產生器215可接收來自訊號控制器312的校正訊號313，該校正訊號提供用於調整訊號220(1)、220(2)的資訊。例如，校正訊號313可引導雙相位訊號產生器215，以提供微波訊號220(1)、220(2)間的已校正或已靶向的相位移。因此，在P與Q點間具有π/2的機械偏移的系統300中，微波訊號220(1)、220(2)的相位彼此相差π/2或π/2加上或減去目標相位差，使得P和Q點處的所量測的相位差為所期，如下文論述。在另一實例中，校正訊號313可引導雙相位訊號產生器215，以升壓及/或衰減微波訊號320(1)、320(2)之一或兩者，這可有利地幫助保持微波場的圓形旋轉。
監測天線211(1)和211(2)分別在跨波導210距P和Q點180度的位置處設置，並且經由其相應接線318(1)和318(2)將類比訊號提供至訊號控制器312。波導210本身內的此等量測將擷取由調諧器250引入的任何相位移及/或振幅偏移。監測天線211可監測波導210內的微波的電場或磁場分量。監測天線211(1)和211(2)在跨波導210距P和Q點180度的位置（或至少每個天線211遠離P和Q的任一點至少30度）可使返回訊號控制器312的訊號包括波導210的作用，此作用不易由位於P和Q點處的監測天線監測。訊號控制器312可經由其相應的接線318(1)和318(2)從監測天線211(1)和211(2)接收訊號，及可測定P和Q點處的訊號的振幅和該等訊號之間的相位移。例如，訊號控制器312可進行同相和正交相位解調（IQ解調），以量測來自監測天線211(1)和211(2)的訊號的振幅和相位移。訊號控制器312可接著採用所量測的相位移及/或振幅來計算並提供對應的數位校正訊號313至雙相位訊號產生器215。數位校正訊號313可經選擇為期望相位移（例如，π/2值）或與假定的期望相位差的偏移（例如，當獲得期望相位差時，校正因子為零）。或者，數位校正訊號可經選擇以調整微波訊號320(1)、320(2)之一或兩者的振幅。雙相位訊號產生器315可接著提供具有相位移及/或振幅的微波訊號320(1)和320(2)，使得當微波訊號經由系統傳播時，將P與Q點間的相位移驅動成期望相位差，及/或在點P和Q處的量測振幅為所期。
視情況，使用者輸入裝置314可將一或更多個目標參數316提供至訊號控制器312。使用者輸入裝置314可以各種方式實現，諸如藉由物理交換器提供直接由訊號控制器312接收的輸出，或作為自使用者介面（例如，鍵盤、其他按鈕、或圖形使用者介面（GUI））獲取目標參數的系統管理硬體和軟體的一部分。目標參數316例如可包括如監測天線211(1)和211(2)處量測的期望相位差或對驅動到波導210中的微波的一或兩者的振幅調整。目標參數316連同來自監測天線211(1)和211(2)的類比訊號可由訊號控制器312採用以產生數位校正訊號313。例如，當採用目標相位差時，可首先基於來自監測天線211(1)和312(1)的訊號產生數位校正訊號313，隨後可藉由加上或減去目標參數316來調整數位校正訊號313。一旦發送數位校正訊號313，雙相位訊號產生器315可提供具有對應偏移的訊號320(1)和320(2)，直到在P與Q點間的相位移根據目標參數驅動為止，並且將數位校正訊號313驅動成其目標值或零。在另一實例中，當採用目標振幅調整時，雙相位訊號產生器215可回應此而調整訊號320(1)、320(2)之一或兩者的振幅。
如本文所揭示，可選的使用者輸入裝置314可因此提供有用的獨立自由度，以用於最佳化半導體處理系統，該半導體處理系統包括系統300或其他具有類似能力的系統。例如，對應的半導體處理系統可藉由處理（例如，蝕刻）晶圓來最佳化。除了鍵入使用者輸入裝置314中的不同目標參數以外，每個晶圓可用相同處理參數處理。藉由指示蝕刻系統效能（例如，蝕刻速率、選擇性、歸因於蝕的刻線寬變化等）的晶圓量測以及系統監測（例如，系統穩定時間、終點偵測參數等），可評估系統效能。接著可基於晶圓量測、系統監測及/或其組合來選擇目標參數的最佳值。
熟習此項技術者將理解儘管訊號控制器312與雙相位訊號產生器215協作以調整微波訊號320(1)和320(2)的相位，調諧器250亦繼續調整阻抗匹配，以最小化反射的功率。因此，系統300不犧牲阻抗匹配，而是提供額外的用於電子設備組255(1)和255(2)的相位及/或振幅調整的能力，以最佳化鄰接波導210的處理腔室中的電漿對稱性。亦即，在實施例中，在系統300的操作期間，訊號產生器315調整相位移，同時調諧器250提供阻抗匹配。在其他實施例中，在系統300的操作期間，訊號產生器315調整振幅，同時調諧器250提供阻抗匹配。
本文的實施例認識到隨著晶圓大小變大且半導體製造中產生的幾何形狀變小，對晶圓周圍的處理環境的所有態樣的均勻度控制的需求將增加。由此，本文的實施例調整產生電漿的微波構造，不僅用以匹配阻抗，亦用以在匹配阻抗後調整相位及/或振幅，進而改良晶圓周圍產生的電漿的對稱性。即使在仔細注意處理腔室的對稱性、晶圓在處理腔室中的位置等時，電漿的不對稱性可由許多原因（例如，用於氣體或電漿輸入與輸出的機械不對稱埠口、感測器、晶圓位置、晶圓平坦面、電纜長度、上述任一部件的材料變化等）引起。為矯正此等原因，除了阻抗匹配之外，附加控制度可提供額外且有用的工具，以改良電漿處理的均勻度。儘管系統300可經由電子調整振幅和相位而提供一些控制，下文所述的進一步機械及電氣調整亦有助益。
第4圖係示出電漿處理系統400的一部分的示意性截面圖，該電漿處理系統調整波導空腔467內可移動導電板420的高度d1 。在系統400中，與殼體405耦接的導電板437形成波導空腔467的下界。介電板469鄰接導電板437且與該導電板直接接觸。類似上文結合第2A圖的論述，d1 和d2 分別影響波導空腔467和介電板469支援特徵模態的能力。儘管頻率調整可用於調整一個或其他此等佈置來支援特徵模態，頻率調整可能無法同時在波導467和介電板469中建立特徵模態條件。亦即，附加調整自由度係有用的。
系統400包括一或更多個調整裝置410，該調整裝置與殼體405和可移動導電板420耦接。可移動導電板420跨微波空腔467面向處理腔室430，亦即，板420係在波導空腔467離處理腔室430的遠側上。調整裝置410在第4圖中圖示為螺桿，但如下所論述，許多其他類型的調整裝置可使用。在第4圖所示出的實施例中，裝置410延伸穿過殼體405的天花板415中的開口412。每個裝置410的高度和殼體405內可移動導電板420的對應高度可用對應螺母411調整。此附加自由度例如允許例如首先調諧微波頻率，以支援板469內的特徵模態條件；接著可調諧d1 ，使得可移動導電板420處於波導467內的特徵模態位置。藉由調諧此等結構的每個來支援其相應特徵模態，在介電板469的下表面處提供了有效耦接和高場強度（例如，用於點燃電漿）。d3 表示介電板469在處理腔室430的地板表面上方的高度，且將至少在某種程度上受限於提供用於工件支架和工件本身（例如，第2A圖的底座135和工件50）的間隙的需求。
如同上文論述的導電板137，導電板437和420可由例如金屬形成，但亦可由其他導電材料、或用保護性（例如，未必導電）的材料部分或完全塗覆的導電材料形成。
儘管圖示桿與螺母的調節裝置來說明調整裝置410的概念，但熟習此項技術者將明瞭任何類型的機械或電磁致動器均可替代所示的桿與螺母的組合。例如，齒輪裝置、彈簧加載裝置、磁性致動器、步進馬達、壓電致動器或其他電磁裝置均可代替。本領域中一般技藝人士在閱讀及理解本揭示時將很容易認識到可用作調整裝置或致動器的替代、等效物、修改、和中間組合。在一些實施例中，複數個中空區域在介電板469的下表面上形成，以促進電漿點燃，如結合第1圖的介電板169所論述。
某些實施例採用單個裝置410來調整跨波導空腔467的d1 ，而其他實施例則使用三個裝置410來相對於板437調整由可移動導電板420形成的平面。裝置410到可移動導電板420的連接可包括允許可移動導電板420相對於裝置410傾斜的撓性材料或接頭。又一些其他實施例可使用更多具有可變形導電板420的裝置410，以提供對d1 和波導空腔467內的微波的點對點控制，而不考慮可移動導電板420或底板437的平面性。視情況，每個裝置410在可移動導電板420上方由導電波紋管413圍住，該等波紋管與天花板415機械及電氣耦接。波紋管413因此確保可移動導電板420處於與殼體405相同的電位，並且可含有任何可能脫落的顆粒，其中裝置410經過天花板415並嚙合螺母411。
在系統400中，在可移動導電板420與殼體405的側面之間可能需要小的間隙，以確保導電板420可自由移動。這可藉由允許一些微波經由間隙傳播而不利地影響波導空腔467內的微波的傳播，此舉可干擾特徵模態條件。如第4圖中表示為A的區域示出於第5A圖直至第5D圖中，作為管控此影響的選項。第5A圖所示出的RF墊片或第5B圖所示出的RF扼流器之一可安裝在可移動導電板420四周，且將因此存在於區域A’以及區域A中（例如，A及A’在殼體405的周緣四周彼此呈180度）。
第5A圖示出了插入可移動導電板420與殼體405之間的RF墊片440。RF墊片440將通常有效減少微波洩漏，但可能刮擦可移動導電板420和殼體405的一或兩者。此舉可能產生金屬顆粒，該等金屬顆粒可能不期望地影響及回應於微波而在波導空腔467四周移動。
第5B圖示出了RF扼流器431，該RF扼流器包括與可移動導電板420耦接的導電支架442、及由支架442抵靠可移動導電板420的頂表面固持的介電材料444。有利地，介電材料444具有側向尺寸L1 =，其中ε1 係材料444的介電常數，λ 係微波波長，且m 係大於零的任一整數。
第5C圖示出了RF扼流器432，該RF扼流器包括RF扼流器431的特徵並增加了第二介電材料445。有利地，介電材料444具有尺寸L2 =，其中ε2 係材料445的介電常數，λ 係微波波長，且p 係大於零的任一整數。應考量介電質會摩擦殼體405的事實；柔軟及/或不脫落的介電質可用作材料445，該等介電質諸如聚四氟乙烯（例如，Teflon®）或聚醚醚酮（PEEK）。
第5D圖示出了RF扼流器433，該RF扼流器僅包括第二介電材料445。在此實施例中，有利地，介電材料445具有尺寸L3 =，其中ε2 係材料445的介電常數，λ 係微波波長，且n 係大於零的任一奇數。L3 經選擇以防止電磁波在介電質填充的間隙中激發，因此減少微波經由間隙的洩漏。
本文的某些實施例可解決諸如訊號產生器、放大電子設備及/或其他部件（例如，第3圖的電子設備組225）無法提供足夠寬的調諧範圍或期望多種共振模態的情況。對此的一種方式為移除界定波導空腔（例如，空腔167或467）的導電板，使得殼體（例如，殼體405）定義單個空腔。
第6圖係示出包括第4圖的電漿處理系統400的大部分特徵的電漿處理系統470的一部分的示意性截面圖。然而，系統470不包括空腔467的底部處的導電板。因為系統470中所用的部件與系統400中的彼等相同，相同元件符號用於此等部件，但因為電氣行為不同，一些尺寸標示方式不同。d2 1現表示空腔467的氣隙高度，而d22 表示介電板469的厚度。
電氣上，系統470係由殼體405和具有厚度dp 的可移動導電板420圍界的單個空腔。然而，介電板469的厚度及介電常數以及所示尺寸d21 仍會影響微波如何在空腔內傳播，包括影響特徵模態條件。因此，用於調整可移動導電板420的高度的機構（本文再次圖示為調整裝置410和螺母411）仍為調諧空腔467內的微波條件的有用工具。當然，熟習此項技術者明瞭任何類型的機械或電磁致動器均可替代所示桿與螺母組合；結合系統400的關於此等特徵的所有論述可等效應用到系統470。利用使此高度調整裝置就位，d2 1可被認為係最小值0至最大值d21 最大值 的變量，其中可移動導電板420將緊靠天花板415（可移動導電板420的下表面將為天花板415下方的可移動板的厚度dp ）。實際上，0和d21 最大值 的極限可進一步受限於可移動板機構的行程極限。
有利地，系統470可調整以支援殼體405的一部分（標記為空腔475）內的至少一個特徵模態。此舉允許場有效往下耦接至介電板469的下表面，其中該等場將耦接至電漿60中。當d21 處於其最小值時，特徵模態將具有最大頻率f 最大值 ；當d21 處於其最大值時，特徵模態將具有最小頻率f 最小值 。有利地，驅動微波輸入466的電子設備組支援從f 最小值 到f 最大值 的所有頻率，使得可針對可移動導電板420的任何實體設定支援特徵模態。針對可獲自電子設備組的任何頻率，一般將存在一個可用於可移動導電板420的特徵模態位置，儘管若d21 最大值 足夠大，則可存在一個以上的可用特徵模態位置。
第7圖係示出包括第6圖的電漿處理系統470的大部分特徵的電漿處理系統480的一部分的示意性截面圖。然而，系統480不包括可移動天花板。當殼體405、其中部件的特性以及尺寸d21 和d22 為熟知及/或可控制時，可能提供其中具有真空密封的介電板469的單式殼體，其中調諧尺寸使得特徵模態由空腔485支援，空腔485類似第6圖的系統470的空腔475。另外，若驅動微波輸入466的電子設備組支援頻率調整，則可能調諧微波頻率以支援空腔485內的特徵模態，儘管如此事實上d21 和d22 係固定的。或者，若在密封殼體405之前調整d21 （例如，藉由利用調整介電板469的高度的臨時機構特性化通電的系統480，連同該臨時機構稍後可抽出），則可利用更少的活動零件或調整提供呈更緊湊形式的完成系統480。類似第4圖的系統400，大小、重量、成本、所用材料等的考量可用於選擇尺寸d21 及d22 。d22 尤其需要足夠厚以在處理腔室430抽空時承受遍及介質板469的大氣壓力，但當d22 非常高時，介電板469將變得又重又貴。
第8圖係示出包括第7圖的電漿處理系統480的大部分特徵的電漿處理系統490的一部分的示意性截面圖。然而，系統490係由頂部注入的微波輸入468供電，而非由第4圖、第6圖及第7圖的系統400、470和480中所示的側面注入的微波輸入466供電。儘管其他實施例理論上可使用頂部注入的微波輸入，如輸入468，整合此類輸入與此等實施例的可移動板可能很難。如同系統480，可以提供呈緻密形式的系統490，特別係在整合一或更多個側面注入的微波輸入466有困難的應用中。
在實施例中，藉由將d21 減至零，可進一步修改第7圖及第8圖的設計。第9圖係示出包括與第7圖的電漿處理系統480類似的特徵的電漿處理系統495的一部分的示意性截面圖，其中d21 設定為零，亦即消除空腔467。如同系統480和490，可提供呈緻密形式的系統495。在系統495的替代實施例中，側面注入的微波輸入466可用第8圖的系統490的頂部注入的微波輸入468代替。
第10圖係示出包括第4圖的電漿處理系統400和第7圖的處理系統480的大部分特徵與操作概念的電漿處理系統500的一部分的示意性截面圖。系統500在板437與介電板520之間引入間隙510，類似介電板469，介電板520密封處理腔室430而與間隙510和空腔467隔開，使得當處理腔室430抽空時，彼等區域不會被抽空。空腔505可經定義成包括間隙510和介電板520。接著以類似第7圖的處理系統480的方式，若驅動微波輸入466的電子設備組支援頻率調整，則可能調諧微波頻率，以支援空腔505內的特徵模態，儘管如此事實上d21 和d22 係固定的。亦即，頻率調整可用於調諧空腔505，以支援另一個特徵模態，而可移動導電板420可用於調諧空腔467，以支援另一個可能的類似特徵模態（例如，若TE112 在空腔505內激發，則有利地TE111 可在空腔467內激發）。
第11圖係示出包括第10圖的電漿處理系統500的大部分特徵與操作概念的電漿處理系統550的一部分的示意性截面圖。系統550引入可控制高度的可調整介電層530，例如該介電層可為液體介電質層（或用液體介電質填充的液囊），該介電質層在微波頻率下不會吸收顯著能量。用於可調整介電層530的適宜材料為全氟聚醚（PFPE），其具有介電常數ε=1.94及損耗正切tanδ=2×10-4 。空腔505可定義成包括間隙510、可調整介電層530和介電板520。空腔505內的高度d21 可定義為間隙510的高度d211 與可調整介電層530的高度d212 的電長度和，亦即，其中ε 液體 係介電層530的介電常數。控制器540可經由流體連接來增加或移除液體介電質的部分，且因此機械調節可調整介電層530，以建立或維持空腔505內的特徵模態條件。此舉提供了用於最佳化系統550的操作的額外自由度，因為可移動導電板420可用於最佳化空腔467，並且可調整介電層530可用於最佳化空腔505，而無需調諧經由微波輸入466供應的微波頻率。因此，若供電給微波輸入466的電子設備組係可調諧的，則可調諧性可保留以最佳化其他特徵（例如，建立或維持處理腔室430內的特徵模態條件）。或者，可使用不可調諧的電子設備組以降低成本。
第12圖係示出包括第10圖的電漿處理系統500的大部分特徵與操作概念的電漿處理系統560的一部分的示意性截面圖。系統560引入包括微波空腔467的上殼體515和包括處理腔室430的下殼體517。上殼體515與下殼體517的相對位置經由致動器570調整，如同調整裝置410，該致動器可為機械、磁性、電磁、壓電或等等。調整上殼體515與下殼體517的相對位置致使分別增加或減小間隙510的高度。空腔507可定義成包括間隙510和介電板520，因此，致動器570的延伸或收縮可以類似可調整介電層530調諧系統550的空腔505（第11圖）的方式來調諧空腔507。第5A圖所示出的RF墊片或第5B圖所示出的RF扼流器之一可安裝在上殼體515與下殼體517之間的界面處，且因此將存在於區域B’以及區域B中（例如，B和B’在殼體515、517的周緣四周彼此呈180度）。
現論述的方法提供了在處理期間減輕不均勻度的局部作用的手段。尺寸變化、材料不均勻度、設備不對稱性等可致使處理腔室的某些區域比其他區域具有更劇烈的電漿作用。此等作用可能在系統內局部化或普遍化；亦即，一些製程不均勻度可影響難以預先預測的個別位置，而其他不均勻度可相對於圓柱形波導210徑向或方位預測。當此等作用發生時，由電漿處理的工件50的對應區域可能受到不均勻地處理。
第13圖示出了工件50（例如，半導體晶圓）上的製程變化的示例性圖案。歸因於一或更多個細微參數變化，該等參數諸如氣體分佈均勻度、電場均勻度、處理腔室材料變化、及/或存在不對稱物品（諸如與處理腔室相關的感測器、出入口、工件處置裝備等），區域580經處理成具有標稱結果，而區域588則處理成具有較差結果。區域580與588之間的顯著表現差異僅出於說明的目的。亦即，區域588可接受處理（例如，蝕刻或沉積），該處理可與區域580中接受的處理僅相差數個百分比，但仍可期望儘可能減少百分比。
在實施例中，經由純電氣構件，可實現區域588的作用以繞工件50旋轉，而工件50本身保持固定。第14圖示出了慢速旋轉波處理對工件50的處理的作用。在本文中使用術語「慢速旋轉(slow rotating)」或「緩慢旋轉(slowly rotating)」意指以遠比電磁輻射的傳播頻率低的速率或頻率（例如，不超過1/1000th ）隨時間改變的波圖案。例如，本文的標稱微波頻率可為約2.5 GHz，但慢速旋轉模態將具有頻率＜1 MHz，且通常為＜10 KHz。
如圖所示（且可類似地可在順時針方向中旋轉），可使區域588的重影輪廓（標記為588’）在工件50上方逆時針方向中旋轉。旋轉區域588’可看作平滑或抹去最初存在於區域588中的作用，使得工件50無一部分受到與初始區域588相同程度的影響。在所示實例中，區域588’不會在工件50的內部和外部區域上方旋轉，因此此等區域仍被標記為區域580’。小部分區域588’在靠近工件的內部和外部區域的帶582上方旋轉，而大部分區域588’在帶582之間的帶584上方旋轉。（應理解僅出於說明之目的將工件50繪示成具有帶；處理作用將在彼此中逐漸減弱，而非在帶582及/或584的邊緣處形成階梯函數變化。）由此，相較於初始區域588中的此等處理作用的密集度，存在於初始區域588中的處理作用可散佈在更大面積上方且將跨帶582和584減小。
選擇Ω以使得在電漿處理過程期間發生許多場旋轉允許對應的電漿不均勻度旋轉，因此平滑由不均勻度致使的「熱」或「冷」處理點（例如，如區域588）對工件的影響。Ω亦可由使用者根據量測的處理均勻度結果來憑經驗調整。
波導空腔內的旋轉波圖案對相鄰處理腔室中產生的電漿的作用亦可取決於旋轉速度而不同。當Ω低於約100 Hz時，電漿點燃可緊接在場旋轉之後。因此，不僅場、還有電漿均以旋轉頻率Ω旋轉。當Ω高於約1000 Hz時，電漿不可在場之後，但對電場強度的總體分佈敏感，進而產生徑向對稱的均勻電漿分佈。在介於約100 Hz與1000 Hz之間的中間值處，作用係旋轉及徑向對稱電漿分佈的混合。在歸因於隨機原因的局部電漿作用與旋轉頻率間亦可存在相互作用，使得有時調整旋轉頻率Ω增加或減少局部處理不均勻度。此等相互作用可藉由在各種旋轉頻率Ω上特性化製程效能及選擇提供最佳均勻度的Ω值而定位。有利地，此等作用可以純電子方式實現，例如藉由令使用者簡單地輸入適當微波訊號的期望值及令處理裝備（例如，訊號產生器215）的控制器按照以下論述計算適當微波訊號。亦即，無需機械裝備修改。
現在利用第3圖的系統300所示的座標系統的上下文中考量上文提及的系統200、300、400、470、480、495、500、550和560的任一者的構造。在所論述的一些實施例中，針對廣義TE 和TM 模態（例如，TEmnl /TMmnl ），提供具有旋轉角頻率Ω（Ω/2π~0.1-1000 Hz）的慢速波旋轉，作為在處理期間減輕不均勻度的局部作用的手段。
假設微波以載波頻率ω自第3圖的系統300中的微波輸入P和Q注入，其中時變振幅分別與cos(Ωt )和cos(Ωt +φ)呈比例。在此φ表示稍後測定的時間相位延遲，且t 表示時間。藉由自微波輸入P注入而激發的圓柱形空腔中的TEmnl /TMmnl 模態可表示成：式(1) 其中取決於徑向（r）與軸向（z）座標的項包括在係數a 中，且m 係正整數。
式(1)亦可寫成複數形式：式(2)
以相同方式，藉由自微波輸入Q注入而激發的TEmnl /TMmnl 模態可以複數形式描述成：式(3)
改寫式(2)與(3)，式(4)式(5)
因此，空腔內產生的波可由下式給出：式(6)
為了提供逆時針旋轉，必須滿足下列條件：式(7)式(8) 或同樣地，式(9)式(10) 其中r和s係任意整數。
同時求解式(9)與(10)，逆時針旋轉的條件可表示成：式(11)式(12)
以相同方式，針對順時針旋轉，式(7)和(8)變成：式(13)式(14) 且式(9)與(10)變成：式(15)式(16)
同時求解式(15)與(16)，順時針旋轉的條件可表示成：式(17)式(18)
比較式(11)&(12)與(17)&(18)，埠口Q的角度θq 具有相同形式，而逆時針與順時針旋轉間的時間相位延遲（φant 和φclk ）相差π。
明確地，式(11)&(12)、(17)&(18)可求解為：
第一種情況：r=1，s=0。 式(19)
第二種情況：r=2，s=0。 式(20)
回到逆時針旋轉的情況，式(6)的所得場可以複數形式表示成：式(21) 及以實數形式表示成：式(22) 這意味著所得波按角頻率Ω/m 在逆時針方向中緩慢旋轉。
式(4)與(5)在逆時針旋轉下可表示成： 式(23)
以實數形式為： 式(24)
為導出埠口P和Q的輸入波形，必須將P和Q的座標代入θ為： 式(25-1)
等式(25-1)提供在（逆時針旋轉）的情況下，埠口P和Q處的輸入波形的通式。
在式(20)的情況下，亦即θp =0，且式(7)：，式(25-1)變成： 式(25-2)
式(25-2)提供在（逆時針旋轉）且的情況下，埠口P和Q處的輸入波形。
針對順時針旋轉，對應於式(21)至(25-2)的等式分別表示如下：式(26)式(27) 式(28) 式(29) 式(30-1)
式(30-1)提供在（順時針旋轉）的情況下，埠口P和Q處的輸入波形的通式。
在式(20)的情況下，亦即θp =0，且式(7)： 式(30-2)
等式(30-2)提供在（順時針旋轉）且的情況下，埠口P和Q處的輸入波形。
以上推導可用作將輸入提供到電子設備組的基礎，使得微波空腔內的給定波圖案可隨時間旋轉。例如，可能期望發送頻率ω的微波，並使所得波圖案以角頻率Ω旋轉。參看第3圖，已知從電子設備組225(1)和225(2)輸送電磁輻射的相對位置P和Q。訊號產生器215可預程式化以選擇ω及/或Ω，或使用使用者輸入裝置314鍵入以作為使用者偏好事項。在已知所有此等參數的情況下，若旋轉應在逆時針方向中，則訊號產生器215根據等式25-2計算Ap 和Aq ，或若旋轉應在逆時針方向中，則根據等式30-2計算Ap 和Aq ，並且根據所計算的Ap 和Aq 提供輸入訊號220(1)和220(2)。
與上文論述的垂直特徵模態相反，某些均勻度問題亦可藉由激發微波空腔內的不同徑向的特徵模態來解決，以更改徑向電漿特性。例如，假定特性化顯示發現存在如同第13圖的區域588的區域。區域588不在工件50內的中心處，而是差不多在其中心與邊緣之間。利用習知微波源難以移除不均勻度致使的區域588。
移除不均勻度的新建議為使用如第15圖所示出的電場590產生電漿60，該電漿具有不對稱的高邊緣輪廓。電漿60的分佈由給定位置處的電場的平方決定。如第16圖所示，第15圖所示出的場可藉由將第一TE 模態（諸如TE111 模態591）疊加至不同階次的第二TE 模態（諸如TE011 模態591）上而產生。僅考慮電場Eθ 的方位分量，因為TE011 模態591的徑向分量總是為零。此舉可導致TE111 模態591和TE011 模態593的共振頻率略微不同。例如，針對直徑約400 mm的特定空腔，TE111 模態593的共振頻率=2.431 GHz，而針對相同空腔，TE011 模態591的共振頻率=2.467 GHz。由此，隨著時間流逝，所得場590的形狀（第15圖）將改變。為避免此情況，電磁輻射頻率ω111 和ω011 間的相位差必須定期重設為零。
如上文所論述，不同階次的TE 模態亦可利用慢速旋轉供應。例如，針對TE111 模態591的輸入功率可以下列形式在P和Q點處（第3圖）注入， 式(31) 進而產生逆時針旋轉。時間相依的慢速旋轉角頻率Ω可經分配來減輕不均勻度。然而，針對TE011 模態593的功率注入具有一定的自由度，因為TE011 模態593係方位對稱的。針對TE011 模態593提供輸入功率的一個代表性形式將使用下列形式， 式(32)
Ω的時間相依分配可由訊號產生器215實現。通常，不同階次模態（諸如TE11X 與TE01X ，其中x=1或2）間的頻率差取決於供電腔室的大小而跨越約30至140 MHz。能電腦處理的硬體（諸如微處理器或FPGA）可在訊號產生器215內實現，以決定及重設此等模態相對於彼此的時間相位。
上文剛剛論述的策略亦可用於裝備能力或其他製程限制致使簡單徑向處理不均勻度的情況。例如，第21A圖示出了在用標稱電漿製程處理之後的工件50，該標稱電漿製程在外部區域710與內部區域720中產生不同結果。在蝕刻製程的情況下，區域720可能經歷標稱蝕刻，而區域710經歷減少的蝕刻，但此情境亦可相反或應用到另一製程類型（例如，沉積製程）。若標稱製程以蝕刻時間t1 利用由TE011 模態激發的電漿提供，則額外蝕刻時間t2 可加至該製程，其中蝕刻利用由高邊緣模態（諸如TE211 ）激發的電漿提供。如同上文的處理策略，這簡單地僅經由電子手段實現，亦即，訊號產生器215可提供適當頻率、相位及/或振幅變化，以提供TE011 、TE211 及/或其他模態。無需機械裝備改變。第21B圖示意性示出了實現此策略的程序，其中第一程段730（例如，使用TE011 模態的標稱蝕刻製程）以標稱功率進行直到時間t1 ，且隨後第二程段740（例如，使用TE211 模態及/或其他模態的訂制高邊緣蝕刻製程）繼續進行時間增量t2 。相較於程段730，電漿功率在程段740中圖示為減小，但情況不一定如此，程段740的功率可等於或甚至大於程段730的功率。亦可增加進一步的程段。本領域中一般技藝人士將容易認識到此技術的替代、等效物、修改、擴充、和中間組合。
腔室幾何形狀及/或構造亦可使慢速旋轉及/或多階TE模態的實現變得具有挑戰性，特別係當相同頻率必須在兩個不同空腔中共振時（例如，如在第10圖、第11圖及第12圖的系統500、550和560中）。解決此挑戰的途徑為以低品質因子設計共振空腔的一或兩者，使得共振峰在振幅上較不明顯，但在頻率方面較寬。
第17圖係方法600的流程圖，該方法產生電漿來處理工件。方法600可使用本文所揭示的系統100、400、500、550和560的一或更多個來實現。方法600的第一步驟602將一或更多種處理氣體引入處理腔室（例如，處理腔室130或430）中。處理腔室至少部分用介電板（例如，介電板169、469、520）密封，該介電板能夠支承對應於處理腔室抽空的壓差。方法600的第二步驟604將電磁輻射（例如，來自電子設備組225(2)、225(2)）傳播到波導空腔（例如，空腔167或467）中，該波導空腔鄰接處理腔室設置。波導空腔至少部分由第一導電板（例如，導電板420）圍界，該第一導電板面向處理腔室且從處理腔室跨波導空腔設置。空腔亦至少部分由第二導電板（例如，板437）圍界，該第二導電板設置在波導空腔與介電板之間。第二導電板形成複數個孔（例如，槽孔168），該孔允許電磁輻射經由第二導電板、經由介電板而傳播到腔室中。第三步驟606點燃來自處理氣體的電漿。第四步驟608利用經由第二導電板的孔傳播到處理腔室中的電磁輻射供應功率以維持電漿。
方法600可變化，以便使用本文所揭示的任何裝備變化，其中該等裝備變化與所列步驟602直至608相容。本領域中一般技藝人士在閱讀及理解本揭示時，基於本文揭示的概念和裝備能力，不僅能夠實踐具體列出的方法600，亦很容易認識到所揭示的步驟的替代、等效物、修改、擴充、和中間組合。
第18圖係方法610的流程圖，該方法在處理腔室中提供電磁輻射以供電給電漿。方法610可使用本文所揭示的系統100、400、470、480、490、500、550和560的一或更多個來實現。方法600的第一步驟612將一或更多種處理氣體引入處理腔室（例如，處理腔室130或430）中。方法610的第二步驟614將電磁輻射（例如，來自電子設備組225(2)、225(2)）從至少兩個位置P和Q（第4圖）傳播到波導空腔（例如，空腔167或467）中，該波導空腔鄰接處理腔室設置。波導空腔與處理腔室分離（例如，藉由介電板，諸如介電板169、469、520），使得處理腔室可在不抽空波導空腔的情況下抽空，而波導空腔內的電磁輻射仍可傳播到處理腔室中。位置P和Q以相應角度θp 和θq 設置在波導空腔的周緣四周（第4圖），且電磁輻射以微波頻率ω與旋轉頻率Ω在波導空腔內提供（等式1-32）。第三步驟616點燃來自處理氣體的電漿。第四步驟618藉由從波導傳播到處理腔室中的電磁輻射供應功率以維持電漿。
方法610可變化，以便使用本文所揭示的任何裝備變化，其中該等裝備變化與所列步驟612直至618相容。本領域中一般技藝人士在閱讀及理解本揭示時，基於本文所揭示的概念和裝備能力，不僅能夠實踐具體列出的方法610，亦很容易認識到所揭示步驟的替代、等效物、修改、擴充、和中間組合。
第19圖係方法620的流程圖，該方法用於在處理腔室中的電漿處理。方法620可使用本文所揭示的系統100、400、470、480、490、500、550和560的一或更多個來實現。方法620的第一步驟622將一或更多種處理氣體引入處理腔室（例如，處理腔室130或430）中。處理腔室鄰接波導空腔（例如，空腔167或467）設置，且波導空腔與處理腔室分離，而不阻擋波導空腔內的電磁輻射傳播到處理腔室中（例如，藉由介電板，諸如介電板169、469、520）。方法620的第二步驟624將電磁輻射傳播到波導空腔中（例如，從電子設備組225(2)、225(2)）。電磁輻射以微波頻率ω提供。在波導空腔內供應的功率的第一部分由波導空腔內以第一TE 模態共振的電磁輻射的一部分供應，且在波導空腔內供應的的功率的第二部分由波導空腔內以第二TE 模態共振的電磁輻射的一部分供應（第15圖、第16圖）。第三步驟626點燃來自處理氣體的電漿。第四步驟628藉由從波導傳播到處理腔室中的電磁輻射供應功率以維持電漿。
方法620可變化，以便使用本文所揭示的任何裝備變化，其中該等裝備變化與所列步驟622直至628相容。本領域中一般技藝人士在閱讀及理解本揭示時，基於本文所揭示的概念和裝備能力，不僅能夠實踐具體列出的方法620，亦很容易認識到所揭示的步驟的替代、等效物、修改、擴充和中間組合。
第20圖係方法630的流程圖，該方法用於在處理腔室中處理工件。方法630可使用本文所揭示的系統100、400、470、480、490、500、550和560的一或更多個來實現。方法620的第一步驟622將工件放置在處理腔室（例如，處理腔室130或430）中。處理腔室鄰接波導空腔（例如，空腔167或467）設置，且波導空腔與處理腔室分離，而不阻擋波導空腔內的電磁輻射傳播到處理腔室中。方法630的第二步驟634在處理腔室中用第一電漿（例如，電漿60）處理工件。步驟634包括將一或更多種處理氣體引入處理腔室中、將電磁輻射傳播到波導空腔中（例如，從電子設備組225(2)、225(2)）、點燃來自處理氣體的電漿、以及藉由從波導空腔傳播到處理腔室中的電磁輻射供應功率以維持電漿。用於第一電漿的功率的至少一部分由波導空腔內以第一TE 模態共振的電磁輻射供應。方法630的第三步驟636在處理腔室中用第二電漿（例如，電漿60）處理工件。步驟636包括將一或更多種處理氣體引入處理腔室中、將電磁輻射傳播到波導空腔中（例如，從電子設備組225(2)、225(2)）、點燃來自處理氣體的電漿、以及藉由從波導空腔傳播到處理腔室中的電磁輻射供應功率以維持電漿。用於第一電漿的功率的至少一部分由波導空腔內以第二TE 模態共振的電磁輻射供應。第一TE 模態的階次不同於第二TE 模態。
方法630可變化，以便使用本文所揭示的任何裝備變化，其中該等裝備變化與所列步驟632直至636相容。本領域中一般技藝人士在閱讀及理解本揭示時，基於本文所揭示的概念和裝備能力，不僅能夠實踐具體列出的方法630，亦很容易認識到所揭示的步驟的替代、等效物、修改、擴充和中間組合。
在已描述了若干實施例之後，熟習此項技術者將認識到在不脫離本發明的精神的情況下可使用各種修改、替代構造、和等效物。此外，一些熟知的製程和元件並未描述，以免不必要地混淆本發明。由此，以上描述不應視為限制本發明的範疇。
應理解提供數值範圍時，除非上下文另外清楚指明，亦具體揭示了介於該範圍的上限與下限之間的每個中間值直到下限單位的十分之一。介於所述範圍內的任何所述值或中間值與該所述範圍內的任何其他所述值或中間值之間的每個較小範圍也包含在內。此等較小範圍的上限和下限可獨立地包括在該範圍內或排除在該範圍外，並且任一個限值、沒有一個限值或兩個限值包括在該等較小範圍中的每個範圍亦包含在本發明內，依所述範圍中任何特別排除的限值而定。當所述範圍包括限值之一或兩者時，排除彼等所包括的限值的任一者或兩者的範圍亦包括在內。
除非上下文另外清楚指明，如本文和隨附申請專利範圍中使用的單數形式「一(a)」、「一(an)」、和「該(the)」包括複數參考。因此，例如，提及「一製程」包括複數個此類製程，且提及「該電極」包括提及一或更多個電極和熟習此項技術者已知的其等效物。再者，當在本說明書和以下申請專利範圍中使用時，「包含(comprise)」、「包含(comprising)」、「包括(include)」、「包括(including)」、和「包括(includes)」等用語意欲規定存在所述特徵、整數、部件、或步驟，但並不排除存在或增加一或更多個其他特徵、整數、部件、步驟、動作、或群組。
50‧‧‧工件
60‧‧‧電漿
100‧‧‧電漿處理系統
105、110‧‧‧殼體
115‧‧‧晶圓介面
120‧‧‧使用者介面
130‧‧‧處理腔室
135‧‧‧底座
137‧‧‧導電板
140‧‧‧控制器
150‧‧‧電源供應器
155‧‧‧氣體供應器
160‧‧‧真空
162‧‧‧開口
165‧‧‧RF產生器
166‧‧‧微波輸入
167‧‧‧波導空腔
168‧‧‧槽孔
169‧‧‧介電板
170‧‧‧通用電力
200‧‧‧電漿處理系統
210‧‧‧波導
211、211(1)-(2)‧‧‧天線
215‧‧‧訊號產生器
220(1)-(2)‧‧‧訊號
225、225(1)-(2)‧‧‧電子設備組
230‧‧‧固態放大器
235(1)-(2)‧‧‧放大的微波訊號
240‧‧‧循環器
245‧‧‧虛擬負載
250‧‧‧調諧器
265‧‧‧轉換器
270‧‧‧孔
300‧‧‧系統
312‧‧‧訊號控制器
313‧‧‧校正訊號
314‧‧‧使用者輸入裝置
315‧‧‧訊號產生器
316‧‧‧目標參數
318(1)-(2)‧‧‧接線
320、320(1)-(2)‧‧‧訊號
400‧‧‧電漿處理系統
405‧‧‧殼體
410‧‧‧調整裝置
411‧‧‧螺母
412‧‧‧開口
413‧‧‧波紋管
415‧‧‧天花板
420、437‧‧‧導電板
430‧‧‧處理腔室
431-433‧‧‧扼流器
440‧‧‧RF墊片
442‧‧‧支架
444、445‧‧‧介電材料
466、468‧‧‧微波輸入
467‧‧‧波導空腔
469‧‧‧介電板
470、480、490、495‧‧‧電漿處理系統
475、485‧‧‧空腔
500、550、560‧‧‧電漿處理系統
505‧‧‧空腔
510‧‧‧間隙
515、517‧‧‧殼體
520‧‧‧介電板
530‧‧‧介電層
540‧‧‧控制器
570‧‧‧致動器
580、588、588’‧‧‧區域
582、584‧‧‧帶
590‧‧‧電場
591TE111 ‧‧‧模態
593TE011 ‧‧‧模態
600、610、620、630‧‧‧方法
602、604、606、608、612、614、616、618、622、624、626、628、632、634、636‧‧‧步驟
710‧‧‧外部區域
720‧‧‧內部區域
730、740‧‧‧程段
A、A’、B、B’‧‧‧區域
d1、d2、d3、d21、d22、dp‧‧‧高度
Eθ ‧‧‧電場
L1、L2、L3‧‧‧尺寸
本揭示可參考以下詳述的描述連同下文簡要描述的圖式來理解，其中若干圖式中始終使用相同的元件符號來表示相似的部件。應注意，出於說明清晰的目的，圖式中某些元件可能未按比例繪製。物品的具體實例可使用括號中的數字表示（例如，監測天線211(1)、211(2)），而無括號的數字表示任一此種物品（例如，監測天線211）。在圖示出物品的多個實例的情況下，為了說明清晰，可僅標示一些實例。
第1圖示意性地示出了根據一實施例的電漿處理系統的主要元件。
第2A圖係示出根據一實施例的電漿處理系統的一部分的示意性等角視圖。
第2B圖係示出形成第2A圖的電漿處理系統的部分的導電板的示意性俯視平面圖。
第3圖係示出根據一實施例的用於將微波提供至採用波導的電漿腔室的系統的主要部件的示意圖。
第4圖係示出根據一實施例的調整波導空腔內的可移動板的位置的電漿處理系統的一部分的示意性截面圖。
第5A圖係示出根據一實施例的用於減少微波在可移動板與殼體之間的洩漏的RF墊片的第4圖的區域的示意圖。
第5B圖係示出根據一實施例的用於減少微波在可移動板與殼體之間的洩漏的第一RF扼流器的第4圖的區域的示意圖。
第5C圖係示出根據一實施例的用於減少微波在可移動板與殼體之間的洩漏的第二RF扼流器的第4圖的區域的示意圖。
第5D圖係示出根據一實施例的用於減少微波在可移動板與殼體之間的洩漏的第三RF扼流器的第4圖的區域的示意圖。
第6圖係示出根據一實施例的包括第4圖的電漿處理系統的大部分特徵的電漿處理系統的一部分的示意性截面圖。
第7圖係示出根據一實施例的包括第6圖的電漿處理系統的大部分特徵的電漿處理系統的一部分的示意性截面圖。
第8圖係示出根據一實施例的包括第7圖的電漿處理系統的大部分特徵的電漿處理系統的一部分的示意性截面圖。
第9圖係示出根據一實施例的包括與第7圖的電漿處理系統類似的特徵的電漿處理系統的一部分的示意性截面圖。
第10圖係示出根據一實施例的包括第4圖和第7圖的電漿處理系統的大部分特徵和操作概念的電漿處理系統的一部分的示意性截面圖。
第11圖係示出根據一實施例的包括第10圖的電漿處理系統的大部分特徵和操作概念的電漿處理系統的一部分的示意性截面圖。
第12圖係示出根據一實施例的包括第10圖的電漿處理系統的大部分特徵和操作概念的另一電漿處理系統的一部分的示意性截面圖。
第13圖示出了工件上的製程變化的示例性圖案。
第14圖示出了根據一實施例的旋轉波製程對工件處理的作用。
第15圖示出了根據一實施例的可在具有腔室壁的腔室內激發的某些徑向特徵模態。
第16圖示出了對應於第15圖中示出的每個特徵模態的尖峰電場強度的位置。
第17圖係根據一實施例的產生電漿來處理工件的方法的流程圖。
第18圖係根據一實施例的在處理腔室中提供電磁輻射以供電給電漿的方法的流程圖。
第19圖係根據一實施例的用於在處理腔室中電漿處理的方法的流程圖。
第20圖係根據一實施例的用於在處理腔室中處理工件的方法630的流程圖。
第21A圖示出了根據一實施例的在外部區域與內部區域中產生不同結果的用標稱電漿製程處理之後的工件。
第21B圖示意性示出了根據一實施例的實現處理策略的程序，其中第一程段以標稱功率進行，且隨後第二程段繼續進行附加時間增量。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無

Claims (20)

  1. 一種產生一電漿來處理一工件的系統，包含： 一處理腔室，可操作以抽空；一殼體，界定一波導空腔；一第一導電板，設置在該殼體內，其中該第一導電板面向該處理腔室並設置在該波導空腔離該處理腔室的一遠側上；一或更多個調整裝置，與該第一導電板和該殼體耦接，其中該一或更多個調整裝置可操作以在一位置範圍內調整該第一導電板的至少一位置；一第二導電板，與該殼體耦接且插入該波導空腔與該處理腔室之間，該第二導電板其中形成複數個孔，以允許該波導空腔內的電磁輻射經由該等孔傳播到該處理腔室中；一介電板，密封該處理腔室而與該波導空腔隔開，使得當該處理腔室抽空時，該波導空腔不會被抽空；以及一或更多個電子設備組，將該電磁輻射發送到該波導空腔中，使得當至少一種處理氣體在該處理腔室內且該電磁輻射從該波導空腔傳播到該處理腔室中時，形成該電漿。
  2. 如請求項1所述之系統，其中當該第一導電板經調整成該位置範圍內的一特徵模態位置且該一或更多個電子設備組將該電磁輻射發送到該波導空腔中時，該波導空腔能夠支援一特徵模態。
  3. 如請求項1所述之系統，其中該處理腔室設置在該殼體內。
  4. 如請求項1所述之系統，其中該一或更多個調整裝置由三個該等調整裝置組成，使得調整該等三個調整裝置調整了該第一導電板在該位置範圍內的該位置及該第一導電板相對於該殼體的一傾斜。
  5. 如請求項1所述之系統，進一步包含與該一或更多個調整裝置一一對應的一或更多個導電波紋管，其中該一或更多個導電波紋管的每個圍繞其相應調整裝置，並電氣連接該第一導電板與該殼體。
  6. 如請求項1所述之系統，其中該一或更多個調整裝置的每個包含與該第一導電板耦接的一螺桿、一齒輪裝置、一磁性致動器、一步進馬達、或一壓電致動器。
  7. 如請求項1所述之系統，進一步包含設置有該第一導電板的一RF墊片或一RF扼流器，以減少微波經由該第一導電板與該殼體間的一間隙的洩漏。
  8. 如請求項1所述之系統，進一步包含設置有該第一導電板的一RF扼流器，以減少微波經由該第一導電板與該殼體間的一間隙的洩漏，其中該RF扼流器包括： 一導電支架，設置在該第一導電板的一周圍四周，在該第一導電板背離該第二導電板的一側上；以及一介電材料，由該導電支架抵靠該第一導電板固定，其中該介電材料具有一側向尺寸L1 =，其中ε1 係該介電材料的一介電常數，λ係該電磁輻射的該波長，且m 係大於零的任一整數。
  9. 如請求項1所述之系統，其中該一或更多個電子設備組的每個匹配其驅動阻抗與由該波導空腔呈現的對該電磁輻射的一阻抗。
  10. 如請求項1所述之系統，進一步包含一訊號產生器，該訊號產生器至少用於： 將一第一微波訊號提供到該一或更多個電子設備組中的一第一電子設備組；以及將一第二微波訊號提供到該一或更多個電子設備組中的一第二電子設備組；並且其中：該等第一和第二微波訊號具有一共同頻率；以及該等第一和第二電子設備組分別放大該等第一和第二微波訊號，以提供該電磁輻射。
  11. 如請求項10所述之系統，進一步包含： 至少兩個監測天線，其中該等監測天線的每個設置在該波導的一周緣四周、離該等第一和第二電子設備組將該電磁輻射發送到該波導空腔中的位置至少30度；以及一訊號控制器，用於：從該等至少兩個監測天線接收類比訊號；至少基於來自該等至少兩個監測天線的該等類比訊號，測定一數位校正訊號；以及將該數位校正訊號發送到該訊號產生器；其中該訊號產生器回應於該數位校正訊號來調整該等第一和第二微波訊號的一相位和一振幅的至少一者。
  12. 如請求項11所述之系統，其中該第一電子設備組包括： 一調諧器，匹配該第一電子設備組的一驅動阻抗與由該波導空腔呈現的一阻抗；一虛擬負載；以及一循環器，將自該波導空腔反射回該第一電子設備組的任何功率分流到該虛擬負載中；其中該訊號產生器調整該等第一和第二微波訊號的該相位和該振幅的至少一者，且同時該調諧器匹配該驅動阻抗。
  13. 如請求項10所述之系統，其中該訊號產生器調整該共同頻率，以支援該介電板內的一特徵模態。
  14. 如請求項1所述之系統，其中該第二導電板鄰接該介電板且與該介電板直接接觸。
  15. 如請求項1所述之系統，其中該第二導電板與該介電板平行，在該第二導電板與該介電板之間有一間隙。
  16. 如請求項15所述之系統，進一步包含一訊號產生器，該訊號產生器至少用於： 將一第一微波訊號提供到該一或更多個電子設備組中的一第一電子設備組；以及將一第二微波訊號提供到該一或更多個電子設備組中的一第二電子設備組；該等第一和第二微波訊號具有一共同頻率；其中該等第一和第二電子設備組的每個分別放大該等第一和第二微波訊號，以提供該電磁輻射；以及該訊號產生器調整該共同頻率，以支援由該間隙和該介電板所形成的一空腔內的一特徵模態。
  17. 如請求項15所述之系統，進一步包含： 一可調整介電層，包含一液體介電質，設置在該間隙內，用於調整由該間隙、該可調整介電層和該介電板所形成的一空腔內的一特徵模態條件；以及一控制器，經構造以增加或移除該液體介電質的部分，以調整該可調整介電層的一厚度。
  18. 如請求項15所述之系統，其中該殼體係一上殼體，且進一步包含： 一下殼體，包括該處理腔室，其中該介電板與該下殼體耦接；以及一致動器，可操作以調整該上殼體相對於該下殼體的相對位置；其中調整該上殼體相對於該下殼體的該相對位置導致調整該第二導電板與該介電板之間的該間隙的距離，以支援該電磁輻射在由該間隙和該介電板所形成一空腔內的一特徵模態。
  19. 一種電漿處理系統，包含： 一處理腔室，可操作以抽空；一或更多個處理氣體供應器，用於將一或更多種處理氣體引入該處理腔室中；一殼體，界定一波導空腔；一或更多個電子設備組，可操作以將電磁輻射發送到該波導空腔中，其中該一或更多個電子設備組的每個匹配其驅動阻抗與由該波導空腔呈現的對該電磁輻射的一阻抗；一第一導電板，設置在該殼體內並在該波導空腔離該處理腔室的一遠側上；至少三個調整裝置，與該第一導電板和該殼體耦接，其中該等至少三個調整裝置可操作以調整該第一導電板在一位置範圍內的至少一位置及該第一導電板相對於該殼體的一傾斜；一第二導電板，與該殼體耦接且插入該波導空腔與該處理腔室之間，該第二導電板其中形成複數個孔，以允許該波導空腔內的該電磁輻射經由該等孔傳播到該處理腔室中；以及一介電板，密封該處理腔室而與該波導空腔隔開，使得當該處理腔室抽空時，該波導空腔不會被抽空；其中：當該第一導電板經調整成該位置範圍內的一特徵模態位置且該一或更多個電子設備組將該電磁輻射發送到該波導空腔中時，該波導空腔能夠支援該等第一和第二導電板之間的一特徵模態；以及當該一或更多種處理氣體中的至少一種處理氣體在該處理腔室內且該電磁輻射從該波導空腔傳播到該處理腔室中時，形成該電漿。
  20. 如請求項19所述之電漿處理系統，進一步包含一訊號產生器，該訊號產生器至少用於： 將一第一微波訊號提供到該一或更多個電子設備組中的一第一電子設備組；以及將一第二微波訊號提供到該一或更多個電子設備組中的一第二電子設備組；並且其中：該等第一和第二微波訊號具有一共同頻率；該等第一和第二電子設備組分別放大該等第一和第二微波訊號，以提供該電磁輻射；以及該等第一和第二電子設備組的每個匹配其相應驅動阻抗與由該波導空腔呈現的對該電磁輻射的一阻抗。
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