TW201501277A - 淺溝槽紋理化區域及相關方法 - Google Patents

淺溝槽紋理化區域及相關方法 Download PDF

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TW201501277A
TW201501277A TW102142822A TW102142822A TW201501277A TW 201501277 A TW201501277 A TW 201501277A TW 102142822 A TW102142822 A TW 102142822A TW 102142822 A TW102142822 A TW 102142822A TW 201501277 A TW201501277 A TW 201501277A
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Homayoon Haddad
Ju-Tao Jiang
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Sionyx Inc
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Abstract

本發明提供了光敏裝置及相關聯的方法。例如，在一觀點中，一光敏成像器裝置可包含：一半導體層，該半導體層具有形成至少一接面之多個摻雜區；以及被耦合到該半導體層之一紋理化區，該紋理化區定位成與電磁輻射交互作用。自一系列的淺溝槽隔離特徵形成該紋理化區。

Description

淺溝槽紋理化區域及相關方法 優先權資料
本申請案主張擁有於2013年6月29日提出申請的美國臨時專利申請案序號60/841,326的優先權之權益，本申請案特此引用該專利申請案之完整內容以供參照。
本發明關於淺溝槽紋理化區域及相關方法。
光與半導體材料之交互作用已成為一種重要的創新。矽成像裝置被用於諸如數位相機、光學式滑鼠、視訊攝影機、及細胞式電話等的各種技術。電荷耦合裝置(Charge-Coupled Device；簡稱CCD)被廣泛用於數位成像，且後來被有較佳性能的互補金屬氧化物半導體(Complementary Metal-Oxide-Semiconductor；簡稱CMOS)成像器加以改進。許多傳統的CMOS成像器利用前面照射(Front Side Illumination；簡稱FSI)。在這些例子中，電磁輻射入射到含有CMOS裝置及電路之半導體面。也 使用了背面照射(Back Side Illumination；簡稱BSI)CMOS成像器，且在許多設計中，電磁輻射入射到在CMOS裝置及電路對向之半導體面。通常利用矽製造CMOS感測器，且該等CMOS感測器可將入射的可見光轉換為光電流，且最終轉換為數位影像。然而，用於偵測入射的紅外線電磁輻射之矽基技術是有一些問題的，這是因為矽是一種具有大約1.1電子伏特(eV)的能隙之間接能隙(indirect bandgap)半導體。因此，矽對波長大於大約1100奈米的電磁輻射之吸收是非常低的。
本發明之揭示提供了具有增強光吸收特性之光電裝置，其中包括納入此類裝置及各種相關聯的方法之系統。例如，在一觀點中，提供了一種具有增強電磁輻射吸收之光電裝置。該裝置可包含被耦合到一支承基材之一半導體層、以及被定位在該半導體層與該支承基材之間的一陣列之淺溝槽隔離面特徵，該等面特徵被定位成與通過該半導體層之電磁輻射交互作用。在一觀點中，該半導體層是單晶矽。在另一觀點中，一裝置層可被耦合到該等面特徵的對向面上之該半導體層。
在一觀點中，一第一接合層可被耦合於該半導體層與該支承基材之間。雖然考慮到各種組態，但是在一特定觀點中，第一接合層可被耦合於該支承基材與該等面特徵之間。在另一觀點中，一第二接合層可被定位於該第一接合 層與該支承基材之間。在又一觀點中，一反射層可被配置於該第一接合層與該第二接合層之間。
該等面特徵可具有各種組態，且可在該半導體層與該半導體支承間之各種位置中形成該等面特徵。例如，在一觀點中，可在該支承基材中形成該等面特徵。在另一觀點中，可在該半導體層中形成該等面特徵。此外，在一觀點中，可根據一預定圖案而配置該等面特徵。在一特定觀點中，該預定圖案可以是一至少實質上均勻的網格。在特定觀點中，該預定圖案可以是一不均勻的配置。此外，在一觀點中，該等面特徵可具有一至少實質上一致的高度。在另一觀點中，該等面特徵的高度是不一致的。
此外，考慮到各種架構組態。例如，在一觀點中，可將該裝置在架構上配置成一前面照射光電裝置。在另一觀點中，可將該裝置在架構上配置成一背面照射光電裝置。
在另一觀點中，提供了一種製造光電裝置之方法。該方法可包含下列步驟：使用淺溝槽隔離蝕刻產生一陣列的面特徵；以及將該陣列的面特徵接合於一支承基材與一半導體層之間。在另一觀點中，產生該陣列的面特徵之該步驟可進一步包含下列步驟：在該半導體層的一面的至少一部分上產生該陣列的面特徵。在又一觀點中，產生該陣列的面特徵之該步驟進一步包含下列步驟：在該支承基材的一面的至少一部分上產生該陣列的面特徵。此外，在一觀點中，將該陣列的面特徵接合於該支承基材與該半導體層之間之該步驟可進一步包含下列步驟：將一第一接合層沉 積到該半導體層上；以及將該第一接合層接合到被配置在該支承基材上之一第二接合層。在某些觀點中，在將該半導體層接合到該支承基材之前，可先在該第一接合層及該第二接合層中之至少一接合層上沉積一反射層。在一進一步的觀點中，該方法可包含下列步驟：使該支承基材對向的一面上之該半導體層變薄到自大約1微米至大約10微米的厚度，而產生一初始薄化面，且在該薄化面上形成一裝置層。然後可視需要而進一步處理該半導體，而形成該光電裝置。
200‧‧‧前面照射裝置
202、302‧‧‧半導體層
204、304‧‧‧支承基材
206、208、306、308‧‧‧摻雜區
210、310‧‧‧紋理化層
212‧‧‧電路層
214、312‧‧‧光
300‧‧‧背面照射裝置裝置
402‧‧‧面特徵
404、504‧‧‧材料層
406、506、606‧‧‧空間
408、508、608‧‧‧線
若要進一步了解本發明揭示之本質及優點，請以與各圖式有關之方式參閱前文中對各實施例之詳細說明，在該等圖式中：第1圖根據本發明揭示的一實施例而提供了示出係為波長的函數的紋理化矽與標準矽比較之光吸收資料；第2圖是根據本發明揭示的另一實施例的一影像感測器之一橫斷面圖；第3圖是根據本發明揭示的另一實施例的一影像感測器之一橫斷面圖；第4圖是根據本發明揭示的另一實施例的與一基材相關聯的一紋理化層之一橫斷面圖；第5圖是根據本發明揭示的另一實施例的與該基材相關聯的一紋理化層之一橫斷面圖；以及 第6圖是根據本發明揭示的另一實施例的與該基材相關聯的一紋理化區之一橫斷面圖。
在本說明書中說明本發明的揭示之前，我們先要了解：該揭示不限於本說明書中揭示的特定結構、製程步驟、或材料，而是將延伸到對相關技術具有一般知識者所將認知的該等特定結構、製程步驟、或材料之等效物。我們亦應可了解：只是為了說明特定實施例而使用本說明書中採用的術語，且此種術語之意圖不在於限制。
定義
將根據下文所述之定義而使用下列術語。
請注意，在本說明書及最後的申請專利範圍之用法中，除非前後文中另有清楚的指示，否則單數形式“一”(“a”)及“該”(“the”)包括複數指示對象。因此，提及“一摻雜劑”時，包括一或多種此類摻雜劑，且提及“該層”時，包括意指一或多個此種層。
在本說明書的用法中，可互換地使用使用術語“光”及“電磁輻射”，且術語“光”及“電磁輻射”可意指在紫外線、可見光、近紅外線、及紅外線光譜中之電磁輻射。該等術語可進一步更廣泛地包括諸如無線電波、微波、X射線、及伽瑪射線等的電磁輻射。因此，術語“光”不限於可見光譜中之電磁輻射。本發明所述的光之許多例子特別意指可 見光及紅外線(及/或近紅外線)光譜中之電磁輻射。對於本發明之揭示而言，可見光範圍的波長被視為自大約350奈米至800奈米，且非可見光波長被視為長於大約800奈米或短於大約350奈米。此外，紅外線光譜被視為包括：該光譜的近紅外線部分(其中包括大約800奈米至1100奈米的波長)、該光譜的短波紅外線(“short wave infrared”)部分(其中包括大約1100奈米至3微米的波長)、以及該光譜的中波長至長波長紅外線(mid-to-long wavelength infrared)(或熱紅外線(thermal infrared))部分(其中包括大於大約3微米且可長達大約30微米的波長)。除非另有提到，否則本說明書中將這些紅外線部分一般被統稱為電磁頻譜的“紅外線”部分。
在本說明書的用法中，術語“偵測”意指對電磁輻射的感測、吸收、及/或收集。
在本說明書的用法中，術語“背面照射”意指一種電磁輻射入射到含有裝置電路的一面對向的半導體材料的一面上之裝置架構設計。換言之，電磁輻射在接觸該裝置電路之前，先入射到一半導體材料上，且通過該半導體材料。
在本說明書的用法中，術語“前面照射”意指一種電磁輻射入射到含有裝置電路的半導體材料的一面上之裝置架構設計。換言之，電磁輻射在接觸該半導體材料之前，先入射到該裝置電路上，且通過該裝置電路。
在本說明書的用法中，術語“吸收率”(“absorptance”)意指入射電磁輻射被一材料或裝置吸收的分數。
在本說明書的用法中，術語“紋理化層”及“紋理化面”可被互換使用，且意指一種具有奈米至微米尺寸的面變化的構形之面。可以各種已知的淺溝槽隔離(STI)技術形成此種面構形。請注意，至少在一觀點中特別放棄雷射消熔(laser ablation)技術。雖然該面的特性可根據所採用的材料及技術而是可變的，但是該面可包括微米尺寸的結構(例如，大約1微米至大約10微米。在又一觀點中，該面可包括自大約5奈米及大約10微米之奈米尺寸及/或微米尺寸的結構。在另一觀點中，面結構可自大約100奈米至大約1微米。可將各種準則用來量測此種結構的尺寸。例如，對於像圓錐體的結構而言，將自一結構的峰至該結構與一鄰接結構之間形成的谷量測該等上述的範圍。對於諸如奈米孔(nanopore)等的結構而言，該等上述範圍將是大約的直徑。此外，該等面結構可相互間隔各種平均距離。在一觀點中，各鄰近結構可間隔自大約50奈米至大約2微米的距離。該間隔將自結構的中心點至一鄰近結構的中心點。
在本說明書的用法中，術語“實質上”意指一行動、特徵、特性、狀態、結構、項目、或結果之完全或幾乎完全的程度或等級。本發明被“實質上”包封的一物體意指該物體被完全包封或被幾乎完全包封。在某些情形中，偏離絕對完全的確切容許程度係取決於特定的情境。然而，一般而言，接近完全時將有達到絕對的全面完成時相同的整體結果。“實質上”被用於負面含義而提及一行動、特徵、特 性、狀態、結構、項目、或結果之完全或幾乎完全的缺少時，同樣可使用“實質上”。例如，“實質上沒有”粒子之一成分將完全缺少粒子，或幾乎完全缺少粒子而使效果與完全缺少粒子時的效果相同。換言之，“實質上沒有”一要素或元素的一成分仍然可能實際上含有該項目，只要沒有該項目的可量測效果即可。
在本說明書的用法中，術語“大約”被用來而提供數值域終點的彈性，其方方式為提供某一值可“稍微高於”或“稍微低於”該終點。
在本說明書的用法中，為了便利，可在一共同列表中出現複數個項目、結構元件、成分元件、及/或材料。然而，應將這些列表詮釋為猶如該列表之每一成員被識別為一獨立的及唯一的成員。因此，不應在沒有相反指示下只根據該列表的任何個別成員及相同列表的任何其他成員出現在一共同組中，就將該個別成員視為該任何其他成員之事實上的等效物。
本說明書中可以一範圍格式表示或呈現濃度、量、及其他數值資料。我們應可了解：只是為了便利及簡潔而使用該範圍格式，且因而應彈性地詮釋為不只是包括被明確地陳述為該範圍的界限之數值，而且也包括該範圍內包含的所有個別數值或子範圍，猶如每一數值及子範圍被明確陳述一般。舉例而言，應將“大約1至大約5”的數值範圍詮釋為：不只是包括大約1至大約5之被明確陳述的值，而且也包括該所示範圍內之個別數值及子範圍。因此，該 數值範圍中包括諸如2、3、及4等的個別值、以及諸如自1至3、自2至4、及自3至5等的子範圍，且個別地包括1、2、3、4、及5。
該相同的原則適用於只以最小值或最大值之方式陳述數值的範圍。此外，不論所述特性的範圍之幅度有多大，都應適用此種詮釋。
揭示
傳統的矽光偵測成像器有有限的光吸收/偵測特性。例如，此類矽基偵測器對紅外光可能是大部分透明的，且薄矽層尤其是如此。在某些例子中，可將諸如砷化銦鎵(InGaAs)等的其他材料用於偵測波長大於大約1000奈米的紅外光，而矽通常仍然被用於偵測可見光譜(亦即，350奈米至800奈米波長的可見光)中之波長。傳統的矽材料需要用於偵測來自波長大於大約700奈米的電磁輻射的光子之相當長的光程長度。因此，可能在矽中之較淺的深度上吸收了可見光，且在標準晶圓深度(例如，大約為750微米)的矽中對較長波長(例如，900奈米)的吸收是很差的。為了可吸收較長的波長而增加矽層的厚度時，將因而大幅增加光偵測成像器的厚度。
根據本發明揭示的觀點之光電裝置由於較長光波長的有效光程長度比傳統裝置增加了，因而呈現增加的光吸收。傳統矽偵測器中之吸收深度是輻射強度減少到半導體面上的輻射強度值的大約36%之矽深度。採用本發明的矽 材料時之光子的增加之光程長度導致吸收深度的明顯減少、或減少之表觀或有效吸收深度。例如，矽的有效吸收深度可被減少到使這些較長的波長可在厚度小於850微米的矽層中被吸收。換言之，藉由增加光程長度，這些裝置能夠在較薄的矽材料內吸收較長的波長(例如，矽可吸收大於1000奈米的波長)。除了在薄矽材料(與700微米厚度比較下之小於30微米厚度之矽材料)中吸收較長波長的光之外，亦可利用此種薄材料增加響應速率(response rate)或響應速度(response speed)。
本發明揭示之光電裝置可以是前面照射(FSI)或背面照射(BSI)裝置。在一典型的FSI成像器中，入射光先經過電晶體及金屬電路，而進入半導體裝置。然而，光在進入成像器的光感測部分之前，可能先自該等電晶體及電路散射，因而導致光損耗(optical loss)及雜訊。因而可將一透鏡配置在FSI像素的上面，以便將該入射光導引且聚焦到該裝置的光感測有效區，因而至少部分地避開該電路。可考慮各種透鏡及透鏡組態，然而，在一觀點中，該透鏡可以是一微透鏡(micro-lens)。
另一方面，BSI成像器被配置成使入射光經由該電路對向的該光敏區而進入該裝置，且使紅外光先被大部分地吸收，然後才抵達該電路，因而大幅減少散射及/或雜訊。BSI設計亦可使成像器具有較大的靈敏度、較小的像素架構、及高填充係數(fill factor)。此外，我們亦應可了解：根據本發明揭示的觀點之裝置不論其為FSI或 BSI，都可被包含到互補金屬氧化物半導體(CMOS)成像器架構或電荷耦合裝置(CCD)成像器架構。
一般而言，且在沒有限制的情形下，本發明之揭示提供了諸如寬頻光敏二極體、像素、以及能夠偵測可見光及紅外線電磁輻射之成像器等的各種光電裝置，且包括提供了製造此種裝置之相關方法。例如，在一特定觀點中，提供了一種可加強吸收的電磁輻射光電裝置。該裝置可包含被耦合到一支承基材之一半導體層、以及被定位在該半導體層與該支承基材之間的一陣列之淺溝槽隔離面特徵，該等面特徵被定位成與通過該半導體層之電磁輻射交互作用。
因而已發現以一種在架構上適當之方式定位的該陣列之淺溝槽隔離面特徵可大幅增加矽材料的光吸收。例如，如第1圖所示，與無紋理化矽比較時，該紋理化區域可在至少大約700奈米至大約1100奈米的電磁頻譜範圍中增加矽的光吸收。
如第2圖所示，圖中示出一FSI裝置200，該FSI裝置200具有被耦合到一支承基材204之一半導體層202,其中該半導體層可包含用來形成至少一接面之一或多個摻雜區206、208。包含一陣列或複數個STI面特徵之一紋理化層210被定位在半導體層202與支承基材204之間。一電路層212被耦合到支承基材204的一對向面上之半導體層202。圖中示出光214照射在裝置200上，且先通過電路層212，然後才接觸半導體層202。並未被吸收且然 後通過半導體層202之光214接觸紋理化層210，而且被改向回到半導體層202，因而可讓光在後續的過程中被吸收。因此，當光214通過該裝置時，紋理化層210增加了光214的有效光程長度。在一觀點中，該半導體層可以是單晶矽。
請參閱第3圖，圖中示出一BSI裝置300，該BSI裝置300具有被耦合到一支承基材304之一半導體層302,其中該半導體層可包含用來形成至少一接面之一或多個摻雜區306、308。在此種情形中，支承基材304可以是一電路層、或包含一電路層之一基體基材。包含一陣列或複數個面特徵之一紋理化層310被定位在半導體層302與支承基材304之間。圖中示出光312照射在裝置300上，且在不接觸可被定位在支承基材304中或上的任何電路元件之情形下通過半導體層302。並未被吸收且然後通過半導體層302之光312接觸紋理化層310，而且被改向回到半導體層302。如同第2圖所示之FSI裝置，當光312通過該裝置時，紋理化層310增加了光312的有效光程長度。在一觀點中，該半導體層可以是單晶矽。
該FSI及BSI例子中之該等多個摻雜區可根據該裝置而具有相同的摻雜分佈(doping profile)或不同的摻雜分佈。此外，任何數目或任何組態的摻雜區被視為在本發明的範圍內。在某些觀點中，該半導體層可被摻雜，因而可被視為一摻雜區。
此外，該裝置可包含深溝槽隔離(Deep Trench Isolation；簡稱DTI)，用以隔離該成像器，且提供光補捉(light trapping)功能。在某些觀點中，該裝置除了該支承基材之外可包含一矽操作晶圓(handle wafer)，用以協助對該裝置的操縱。在某些觀點中，該支承基材可以是一矽操作晶圓。將一矽操作晶圓耦合到該半導體層的一種技術包括氧化物接合(oxide bonding)。可在美國專利申請案序號13/069,135中找到與基材、接合、及各種成像器細節有關之進一步細節，且本發明特此引用該專利申請案以供參照。
根據本發明揭示的觀點之光電裝置可包含能夠吸收特定波長範圍內的電磁輻射光電二極體或像素。此類成像器可以是被動式像素感測器(Passive Pixel Sensor；簡稱PPS)、主動式像素感測器(Active Pixel Sensor；簡稱APS)、或數位像素感測成像器(Digital Pixel Sensor Imager；簡稱DPS)等的成像器。此類裝置亦可在架構上被配置成三或四電晶體主動式像素感測器(3T APS或4T APS)。此外，具有4個以上的電晶體之裝置也是在本發明的範圍內。此類裝置亦可包含被用於CMOS成像器之針扎光電二極體(pinned photodiode)架構。此外，此類光電裝置亦可被用於飛行時間(Time-Of-Flight；簡稱TOF)應用、以及各種結構化燈光(structured light)應用。也考慮到可將此類裝置配置為滾動快門(rolling shutter)或全域快門(global shutter)讀出裝置。
在某些觀點中，一裝置可包含被定位在該紋理化層與 該等摻雜區間之一鈍化層(passivation layer)。在某些觀點中，如將於下文中更完整地說明的，可摻雜該鈍化層而產生一表面場(surface field)。請注意，不論是否設有該鈍化區，都可將該紋理化區設置在該半導體材料的光入射面、該半導體材料的該光入射面對向之一面、或該光入射面及該光入射面之對向面。此外，該裝置亦可包含被耦合到半導體層且可操作而自該等摻雜區傳輸電信號之一電傳輸元件。此外，一電傳輸元件可包括各種裝置，其中包括(但不限於)電晶體、感測節點、傳輸閘(transfer gate)、及傳輸電極(transfer electrode)等的裝置。
如前文所述，係由複數個面特徵構成該紋理化層，其中已在該半導體層與該支承基材間之一界面上以一陣列或其他群組之方式形成了這些面特徵。在某些觀點中，該紋理化區可覆蓋該半導體層與該支承基材間之整個界面，而在其他觀點中，該紋理化區可以只覆蓋該半導體層與該支承基材間之界面的一部分。例如，在一觀點中，該紋理化層可覆蓋至少在通過該半導體層的光將接觸該界面的區域中之材料間之界面。在另一觀點中，該紋理化層可覆蓋只有在通過該半導體層的光將接觸該界面的區域中之材料間之界面。因此，我們應可了解：該紋理化層之覆蓋區可取決於該裝置的設計、以及所需光補捉及/或光改向的預期圖案。本發明揭示之範圍將不必然受限於該界面包括紋理化層的程度。
此外，在某些觀點中，該半導體層與該支承基材之間 可設有一或多個中間層。這些層可被用於促進接合，被用於反射光，或用於各種其他用途。例如，在一觀點中，一或多個接合層可被用於促進將該支承基材接合到該半導體層。在此類情形中，將一第一接合層施加到該半導體層且將一第二接合層施加到該支承基材作為接合機構，可能是有利的。該接合層可包括能夠促進該支承基材與該半導體層間之接合的材料。非限制性例子可包括二氧化矽、氮化矽、及非晶矽(amorphous silicon)等的材料。特定接合層之厚度又可根據所利用的製造技術及設計者的偏好而改變。然而，在一觀點中，接合層可厚到足以促進接合，且薄到足以將該裝置內之波導效應(waveguide effect)最小化。在另一觀點中，接合層可具有自大約30奈米至大約3微米的厚度。在又一觀點中，接合層可具有自大約40奈米至大約2微米的厚度。
該紋理化層之位置可因而受到該支承基材與該半導體層耦合的本質以及該紋理化層的形成位置之影響。在一觀點中，可在該半導體層中或上形成該紋理化層。在另一觀點中，可在該支承基材中或上形成該紋理化層。對於在該半導體層中或上形成該紋理化層之情況而言，可將一或多個接合層耦合在該支承基材與該紋理化層之間。如果利用兩個或更多個接合層，則可在該紋理化層上形成一第一接合層，可在該支承基材上形成一第二接合層，然後可將該第一及第二接合層接合在一起。
對於在該支承基材中或上形成該紋理化層之情況而 言，可將一或多個接合層耦合在該半導體層與該紋理化層之間。例如，在一觀點中，可將一或多個接合層耦合於該支承基材與該等面特徵之間。如果利用兩個或更多個接合層，則可在該紋理化層上形成一第一接合層，可在該半導體層上形成一第二接合層，然後可將該第一及第二接合層接合在一起。
如前文所述，可在任何兩個上文中提及的層或材料之間額外地配置一光反射層。例如，在一觀點中，可將一反射層施加到該紋理化層的一面。在另一觀點中，可將一反射層施加到一接合層的任一面。在一特定觀點中，可使一反射層定位在一第一與第二接合層之間。該反射層可包含能夠將光反射回到該半導體層的任何材料。非限制性例子可包括金屬、陶瓷、氧化物、玻璃、及分散式布瑞格反射器(distributed Bragg reflector)堆疊等的材料，其中包括該等材料的合金及組合。
可以能夠以一種可重複且可預設的方式蝕刻之製程製造該紋理化層之該等面特徵。然而，在一觀點中，可以任何數目的淺溝槽隔離(STI)技術形成該等面特徵。雖然此類製造技術是已知的，但是先前並未將該等製造技術用於產生各電路元件間之電絕緣區。因此，已將此種實施方式用於電路元件的周圍。然而，本發明之範圍係有關在與光交互作用的位置上的面特徵陣列之產生。利用該交互作用，光可被該面特徵陣列改向、擴散、聚焦、或其以其他方式操縱。
此外，STI技術可被用於形成有各種形狀及圖案等的特性之此類面特徵。例如，在一觀點中，可根據一預定圖案而將該等面特徵配置到一陣列中。在一特定觀點中，該預定圖案可以是一均勻的或實質上均勻的網格。此外，預定圖案可以是一有組織的、整齊的、或週期性的圖案。在另一觀點中，該預定圖案可以是一不均勻的或實質上不均勻的圖案。面特徵陣列之圖案也可以是雜亂的、準週期性的(quasi-periodic)、或隨機的等的圖案。
如前文所述，該紋理化層可被用於擴散光，使光改向，且因而增加該裝置的量子效率(quantum efficiency)。在某些例子中，一部分的光通過該半導體層而接觸該紋理化層。該紋理化層之該等面特徵因而有助於增加該半導體層之有效光程長度。這些面特徵可以是微米尺寸的及/或奈米尺寸的，且可以是可經由STI技術而形成的任何形狀或組態。這些形狀及組態之非限制性例子包括圓錐形、柱形、角錐形、倒轉的特徵、溝槽、及突出構造等的形狀及組態，其中包括該等形狀及組態之組合。此外，諸如特徵尺寸、維度、材料類型、摻雜分佈、紋理位置等的因素之操縱可讓特定波長或特定範圍的波長穿隧通過該紋理化層。在一觀點中，調整該裝置時，可讓特定波長或特定範圍的波長被吸收。在另一觀點中，調整該裝置時，可讓特定波長或特定範圍的波長經由濾波而被減少或消除。
根據本發明揭示的觀點之紋理化層可讓該裝置內之半導體層經歷多次光(尤其是較長波長的光(亦即，紅外 線))通過。此種內反射(internal reflection)可增加有效光程長度，因而可是諸如矽等的材料在小於標準矽的厚度下吸收光。如前文所述，以此種方式增加矽中之電磁輻射的有效光程長度時，將增加該裝置的量子效率，因而導致較佳的信號雜訊比。
可根據該裝置之設計及所需特性而改變被用於製造該紋理化層的材料。因此，將可被用於建構紋理化區的任何材料視為在本發明之範圍內。在一觀點中，可在該半導體層(例如，一矽磊晶層)上直接形成該紋理化區。在另一觀點中，可在該半導體層之上沉積一額外的材料，用以支持該紋理化層的形成。此類材料之非限制性例子包括半導體材料、介電材料、矽、多晶矽、非晶矽、及透明導電氧化物等的材料，其中包括該等材料之複合物及組合。在一特定觀點中，該紋理化層可以是一紋理化多晶矽層。因此，可將一多晶矽層沉積到該半導體層之上，且可直接沉積到該半導體層之上或沉積到一中間鈍化層之上，然後使該鈍化層產生紋理，而形成該紋理化區。在另一觀點中，該紋理化層可以是一紋理化介電層。在此種情形中，該紋理化層可以是構成被配置在該半導體層上的一鈍化區的一介電層之一部分。在又一觀點中，該紋理化層可以是一透明導電氧化物或另一半導體材料。在介電層之情形中，該紋理化層可以是一鈍化層的一紋理化部分，或可自被沉積在一鈍化層之上的其他介電材料形成該紋理化層。
可將各種方法用於形成STI特徵，且任何此類淺溝槽 形成技術被視為在本發明的範圍內。請注意，在一觀點中，特別自本發明的範圍中放棄涉及雷射消熔技術之紋理化技術。
在某些情形中，可使用被圖案化的光罩且利用微影技術，然後蝕刻而形成特定結構或圖案，而形成該紋理化層。在一觀點中，STI技術可被用於形成該紋理化區。考慮到了各種STI技術，且任何此類技術被視為在本發明的範圍內。在一非限制性例子中，在將利用淺溝槽蝕刻的材料上沉積一氧化物材料。在該氧化物材料上沉積一氮化物材料的均勻塗層，然後將一光阻材料的一有圖案之塗層用來作為一光罩。因此，該光罩之圖案將界定該紋理化區之未來圖案。然後可將一些蝕刻製程中之任何蝕刻製程施加到該分層材料。因此，在該光阻之下的該分層材料之各區域被保護而不被蝕刻，而並非位於該光阻之下的該分層材料之各區域利用該製程而被蝕刻。該製程持續被執行，而在該光阻材料間之該等未被保護的區域中產生被蝕刻通過該氮化物材料、該氧化物材料且進入該基材的淺溝槽(或洞)。在蝕刻了該淺溝槽之後，可以任何適當的製程去除該光阻材料。請注意，雖然術語“淺溝槽”被用來描述該蝕刻製程，但是所形成的蝕刻圖案不限於溝槽，而是亦可包括洞、坑、及圓錐體等的圖案。
在某些觀點中，可以開放空間之方式留下該等被蝕刻區。在其他觀點中，可執行額外的處理，而填補該等被蝕刻區。例如，可沿著該等溝槽之側面及底部沉積類似於氧 化物襯墊之一氧化物材料。可利用一熱氧化製程、一直接氧化物沉積、或任何其他適用之製程沉積該氧化物材料。一旦該等被蝕刻區被充分地填補之後，可以諸如化學機械研磨(CMP)處理等的技術進一步處理所形成的表面，然後一旦露出該表面之後，可去除該氮化物層。
在另一觀點中，可沿著側壁及/或底部而在一摻雜分佈下以高濃度摻雜該等被蝕刻區，而產生一表面場。背表面場(back surface field)可被用來阻止光生載子(photo-generated carrier)自接面朝向該紋理化層移動，且因而應相應地設計該摻雜分佈。該等電磁輻射中之該背表面場的使用因而可被用於在電氣上鈍化該紋理化層周圍的區域。
該等面特徵可根據所形成的裝置之所需特性而具有各種組態、結構、及尺寸。在一觀點中，例如，如第4圖所示，圖中示出在諸如該半導體層等的一材料層404中形成形成一些面特徵402。該例子中之該等面特徵被均勻地配置成由一系列的空間或洞406以及線408或柱構成之一均勻的網格圖案。考慮到各種均勻的網格圖案，且在一觀點中，根據自該被蝕刻材料的上面或下面檢視，該圖案可包括被一些空間圍繞的一系列被均勻間隔開之柱，或被一些柱圍繞的一系列被均勻間隔開之空間。在另一觀點中，該均勻的網格圖案可包括被一系列均勻間隔的空間或洞圍繞的一系列之線(且係在該等線之間切割出該系列的空間或洞)，或被一系列均勻間隔的線圍繞的一系列之空間或洞 (且係在該等線之間切割出該系列的空間或洞)。
此外，如前文所述，面特徵的蝕刻圖案可以是預定的不均勻圖案。例如，如第5圖所示，被蝕刻到材料層504內之空間506是大約相同的尺寸及形狀，且線或柱508的寬度有變化。第6圖示出空間606及線或柱608都有變化之一蝕刻圖案。請注意，考慮到各種蝕刻圖案，且本發明之範圍不應受此限制。關於不均勻圖案，在某些觀點中，該等圖案可以是隨機的，線或柱、空間、或以上兩者都可以是隨機的。
除了STI製程形成的圖案之外，蝕刻的深度也可能影響到光吸收。例如，在一觀點中，該等面特徵可具有均勻的或實質上均勻的深度或高度。雖然該深度或高度可根據該裝置的預期用途及設計而改變，但是在一觀點中，該高度或深度可自大約50奈米至大約2微米。請注意，在標準STI製程中，處理深度是大約0.35微米，且該處理深度也被視為在本發明的範圍內。在另一觀點中，該等面特徵可具有不均勻的深度或高度，且因而深度或高度可在該紋理化層的面上改變。根據該裝置的所需設計，此類變化在某些例子中可以是隨機的，且在其他例子中可以是不隨機的。在一觀點中，該深度或高度可自大約50奈米至大約2微米。在某些觀點中，可使用分離的深度級別。例如，在一觀點中，一級別可具有0.35微米的深度，而另一級別可具有0.7微米的深度。藉由使用不同的光罩，可實現不同的深度級別。同樣地，可蝕刻後續的級別，而產 生一第三級別、一第四級別、或更多的級別。請注意，在某些觀點中，每一級別可具有自大約50奈米至大約2微米的深度。
如前文所述，根據本發明揭示的觀點之各種裝置可呈現比傳統的光敏裝置更多的吸收。例如，對於厚度自大約1微米至大約10微米的根據本發明揭示的觀點之主動半導體層而言，該吸收特性可如下所述：在一觀點中，該半導體層可吸收入射的700奈米光之自大約60%至大約80%；在另一觀點中，該半導體層可吸收入射的850奈米光之自大約40%至大約60%；在又一觀點中，該半導體層可吸收入射的940奈米光之自大約25%至大約40%；在一進一步的觀點中，該半導體層可吸收入射的1000奈米光之自大約15%至大約30%；以及在又一進一步的觀點中，該半導體層可吸收入射的1064奈米光之自大約5%至大約10%。此外，視架構而定，根據本發明揭示的觀點之裝置可呈現對特定波長的光之小於上述吸收值之自大約1%至大約5%之外部量子效率(External Quantum Efficiency)。此外，又請注意，本發明揭示之裝置具有與不具有紋理化區的標準磊晶裝置至少實質上相同之暗電流(dark current)。
雖然本發明之揭示將重點放在矽材料，但是我們應可了解：也考慮使用各種半導體材料，且該等半導體材料應被視為在本發明揭示之範圍內。此類半導體材料之非限制性例子包括四族材料、由二族及六族材料構成之化合物及合金、由三族及五族材料構成之化合物及合金、以及上述 半導體材料之組合。更具體而言，例示之四族材料可包括矽、碳(例如，鑽石)、鍺、以及上述材料之組合。四族材料之各種例示組合可包括碳化矽(SiC)及矽鍺(SiGe)。在一特定觀點中，該半導體材料可以是或可包括矽。例示之矽材料可包括非晶矽(a-Si)、微晶矽(microcrystalline silicon)、多晶矽、及單晶矽、以及其他晶體類型。在另一觀點中，該半導體材料可包括矽、碳、鍺、氮化鋁、氮化鎵、砷化銦鎵、砷化鋁鎵、以及上述半導體材料之組合中之至少一者。在又一觀點中，該半導體材料可包括使用於製造成像器之任何材料，其中包括矽、矽鍺、及砷化銦鎵等的材料，且包括上述材料之組合。
矽半導體層之厚度可以是可進行電磁輻射偵測及轉換功能之任何厚度，且因而矽材料之任何此類厚度被視為在本發明揭示之範圍內。在某些觀點中，該紋理化層增加了該裝置的效率，使該矽材料可以比先前所能達到的厚度更薄。減少該矽材料之厚度時，將減少製造此種裝置所需的矽之量。例如，在一觀點中，該矽材料具有自大約500奈米至大約50微米的厚度。在另一觀點中，該矽材料具有小於或等於大約100微米的厚度。在又一觀點中，該矽材料具有自大約1微米至大約10微米的厚度。在一進一步的觀點中，該矽材料可具有自大約5微米至大約50微米的厚度。在又一進一步的觀點中，該矽材料可具有自大約5微米至大約10微米的厚度。
考慮到將各種摻雜劑材料用於形成該等多個摻雜區且在該等淺溝槽區上產生一表面場，且可被用於該等製程之此類摻雜劑被視為在本發明之範圍內。請注意，可根據被摻雜的材料以及所形成的材料之預期用途而改變所採用之特定摻雜劑。
摻雜劑可以是電荷提供(charge donating)或接受摻雜劑物種。更具體而言，電子提供或電洞提供物種可使一區域的極性變為比該半導體層更正或更負。例如，在一觀點中，該摻雜區可以是p型摻雜。在另一觀點中，該摻雜區可以是n型摻雜。可在該摻雜區上或該摻雜區附近形成一高濃度摻雜區，而產生一針扎二極體。在一非限制性例子中，該半導體層之極性可以是負的，且可分別以p+及n型摻雜劑摻雜一摻雜區及一高濃度摻雜區。在某些觀點中，可使用該等區域的n(--)、n(-)、n(+)、n(++)、p(--)、p(-)、p(+)、p(++)型摻雜。在一觀點中，摻雜劑材料之非限制性例子可包括硫(S)、氟(F)、硼(B)、磷(P)、氮(N)、砷(As)、硒(Se)、碲(Te)、鍺(Ge)、氬(Ar)、鎵(Ga)、銦(In)、銻(Sb)、以及上述材料之組合。

Claims (22)

  1. 一種具有增強電磁輻射吸收之光電裝置，包含：被耦合到一支承基材之一半導體層；以及被定位在該半導體層與該支承基材之間的一陣列之淺溝槽隔離面特徵，該面特徵被定位成與通過該半導體層之電磁輻射交互作用。
  2. 如申請專利範圍第1項之裝置，其中該半導體層是單晶矽。
  3. 如申請專利範圍第1項之裝置，進一步包含被耦合在該半導體層與該支承基材之間的一第一接合層。
  4. 如申請專利範圍第3項之裝置，其中該第一接合層被耦合在該支承基材與該等面特徵之間。
  5. 如申請專利範圍第3項之裝置，進一步包含被定位在該第一接合層與該支承基材之間的一第二接合層。
  6. 如申請專利範圍第5項之裝置，進一步包含被配置在該第一接合層與該第二接合層之間的一反射層。
  7. 如申請專利範圍第1項之裝置，其中在該支承基材中形成該面特徵。
  8. 如申請專利範圍第1項之裝置，其中在該半導體層中形成該面特徵。
  9. 如申請專利範圍第1項之裝置，其中根據一預定圖案而配置該面特徵。
  10. 如申請專利範圍第9項之裝置，其中該預定圖案是一至少實質上均勻的網格。
  11. 如申請專利範圍第9項之裝置，其中該預定圖案是一不均勻的配置。
  12. 如申請專利範圍第1項之裝置，其中該面特徵具有一至少實質上一致的高度。
  13. 如申請專利範圍第1項之裝置，其中該面特徵的高度是不一致的。
  14. 如申請專利範圍第1項之裝置，進一步包含一裝置層，該裝置層被耦合到該面特徵的對向面上的該半導體層。
  15. 如申請專利範圍第1項之裝置，其中該裝置在架構上被配置成一前面照射光電裝置。
  16. 如申請專利範圍第1項之裝置，其中該裝置在架構上被配置成一背面照射光電裝置。
  17. 一種製造光電裝置之方法，包含：使用淺溝槽隔離蝕刻在一半導體層上產生一陣列的面特徵；以及將該陣列的面特徵接合於一支承基材與該半導體層之間。
  18. 如申請專利範圍第17項之方法，其中產生該陣列的面特徵進一步包含：在該半導體層的一面的至少一部分上產生該陣列的面特徵。
  19. 如申請專利範圍第17項之方法，其中產生該陣列的面特徵進一步包含：在該支承基材的一面的至少一部分上產生該陣列的面特徵。
  20. 如申請專利範圍第17項之方法，其中將該陣列的面特徵接合於該支承基材與該半導體層之間進一步包含：將一第一接合層沉積到該半導體層上；以及將該第一接合層接合到被配置在該支承基材上之一第二接合層。
  21. 如申請專利範圍第20項之方法，進一步包含：在將該半導體層接合到該支承基材之前，先在該第一接合層及該第二接合層中之至少一接合層上沉積一反射層。
  22. 如申請專利範圍第17項之方法，進一步包含：使該支承基材對向的一面上之該半導體層變薄到自大約2微米至大約10微米的厚度，而產生一初始薄化面；以及在該薄化面上形成一裝置層。
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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
US20120146172A1 (en) 2010-06-18 2012-06-14 Sionyx, Inc. High Speed Photosensitive Devices and Associated Methods
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US20130016203A1 (en) 2011-07-13 2013-01-17 Saylor Stephen D Biometric imaging devices and associated methods
US9064764B2 (en) * 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
KR20150130303A (ko) 2013-02-15 2015-11-23 사이오닉스, 아이엔씨. 안티 블루밍 특성 및 관련 방법을 가지는 높은 동적 범위의 cmos 이미지 센서
WO2014151093A1 (en) 2013-03-15 2014-09-25 Sionyx, Inc. Three dimensional imaging utilizing stacked imager devices and associated methods
WO2014209421A1 (en) * 2013-06-29 2014-12-31 Sionyx, Inc. Shallow trench textured regions and associated methods
US9337229B2 (en) * 2013-12-26 2016-05-10 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing method thereof

Family Cites Families (755)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3487223A (en) 1968-07-10 1969-12-30 Us Air Force Multiple internal reflection structure in a silicon detector which is obtained by sandblasting
US4017887A (en) 1972-07-25 1977-04-12 The United States Of America As Represented By The Secretary Of The Air Force Method and means for passivation and isolation in semiconductor devices
US3973994A (en) 1974-03-11 1976-08-10 Rca Corporation Solar cell with grooved surface
US3922571A (en) 1974-06-12 1975-11-25 Bell Telephone Labor Inc Semiconductor voltage transformer
US3994012A (en) 1975-05-07 1976-11-23 The Regents Of The University Of Minnesota Photovoltaic semi-conductor devices
JPS52109884A (en) 1976-03-11 1977-09-14 Nec Corp Stripe type hetero junction semoonductor laser
GB1573309A (en) 1976-03-24 1980-08-20 Mullard Ltd Semiconductor devices and their manufacture
US4201450A (en) 1978-04-03 1980-05-06 Polaroid Corporation Rigid electro-optic device using a transparent ferroelectric ceramic element
US4176365A (en) 1978-05-08 1979-11-27 Sperry Rand Corporation Josephson tunnel junction device with hydrogenated amorphous silicon, germanium or silicon-germanium alloy tunneling barrier
GB2030766A (en) 1978-09-02 1980-04-10 Plessey Co Ltd Laser treatment of semiconductor material
US4181538A (en) 1978-09-26 1980-01-01 The United States Of America As Represented By The United States Department Of Energy Method for making defect-free zone by laser-annealing of doped silicon
JPS55120175A (en) 1979-03-12 1980-09-16 Clarion Co Ltd Variable capacitance diode with plural super-capacitance variable electrode structures
US4277793A (en) 1979-07-16 1981-07-07 Rca Corporation Photodiode having enhanced long wavelength response
GB2207801B (en) 1979-07-30 1989-05-24 Secr Defence Thermal imaging devices
US4242149A (en) 1979-07-31 1980-12-30 The United States Of America As Represented By The Secretary Of The Army Method of making photodetectors using ion implantation and laser annealing
US4253882A (en) 1980-02-15 1981-03-03 University Of Delaware Multiple gap photovoltaic device
US4322571A (en) 1980-07-17 1982-03-30 The Boeing Company Solar cells and methods for manufacture thereof
US4343832A (en) 1980-10-02 1982-08-10 Motorola, Inc. Semiconductor devices by laser enhanced diffusion
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS5771188A (en) 1980-10-21 1982-05-01 Mitsubishi Electric Corp Amorphous solar cell
US4568960A (en) 1980-10-23 1986-02-04 Rockwell International Corporation Blocked impurity band detectors
US4452826A (en) 1980-11-24 1984-06-05 Hughes Aircraft Company Use of polysilicon for smoothing of liquid crystal MOS displays
JPS57173966A (en) 1981-04-20 1982-10-26 Fuji Photo Film Co Ltd Solid state image pickup device
US4546945A (en) 1981-04-30 1985-10-15 Sea Co Services Limited Freight-carrying platforms
US4593303A (en) 1981-07-10 1986-06-03 Fairchild Camera & Instrument Corporation Self-aligned antiblooming structure for charge-coupled devices
DE3280293D1 (de) 1981-11-04 1991-02-21 Kanegafuchi Chemical Ind Biegsame photovoltaische einrichtung.
US4419533A (en) 1982-03-03 1983-12-06 Energy Conversion Devices, Inc. Photovoltaic device having incident radiation directing means for total internal reflection
US4514582A (en) 1982-09-17 1985-04-30 Exxon Research And Engineering Co. Optical absorption enhancement in amorphous silicon deposited on rough substrate
US4663188A (en) 1982-09-27 1987-05-05 Rca Corporation Method for making a photodetector with enhanced light absorption
JPS59127879A (ja) 1983-01-12 1984-07-23 Semiconductor Energy Lab Co Ltd 光電変換装置およびその作製方法
US4493942A (en) 1983-01-18 1985-01-15 Exxon Research And Engineering Co. Solar cell with two-dimensional reflecting diffraction grating
US4536608A (en) 1983-04-25 1985-08-20 Exxon Research And Engineering Co. Solar cell with two-dimensional hexagonal reflecting diffraction grating
JPH0785135B2 (ja) 1983-09-05 1995-09-13 オリンパス光学工業株式会社 内視鏡装置
DE3437561A1 (de) 1983-10-13 1985-04-25 Canon K.K., Tokio/Tokyo Bildaufnahmevorrichtung
AU565214B2 (en) 1983-12-23 1987-09-10 Unisearch Limited Laser grooved solar cell
JPS60138918A (ja) 1983-12-27 1985-07-23 Toshiba Corp 半導体装置の製造方法
US4617593A (en) 1984-08-07 1986-10-14 Texas Instruments Incorporated Visible and near infrared imaging system
US4703996A (en) 1984-08-24 1987-11-03 American Telephone And Telegraph Company, At&T Bell Laboratories Integrated optical device having integral photodetector
AU560866B2 (en) 1984-09-25 1987-04-16 Matsushita Electric Works Ltd. Passive infrared detector
US4679068A (en) 1985-07-25 1987-07-07 General Electric Company Composite visible/thermal-infrared imaging system
US4648936A (en) 1985-10-11 1987-03-10 The United States Of America As Represented By The United States Department Of Energy Dopant type and/or concentration selective dry photochemical etching of semiconductor materials
US4673770A (en) 1985-10-21 1987-06-16 Joseph Mandelkorn Glass sealed silicon membrane solar cell
US4777490A (en) 1986-04-22 1988-10-11 General Electric Company Monolithic antenna with integral pin diode tuning
JPS63153A (ja) 1986-05-26 1988-01-05 Fujitsu Ltd 電荷転送装置
JPH0642291B2 (ja) 1986-08-25 1994-06-01 キヤノン株式会社 集積化光ヘツド
US4723086A (en) 1986-10-07 1988-02-02 Micronix Corporation Coarse and fine motion positioning mechanism
JPS63116421A (ja) 1986-11-05 1988-05-20 Mitsubishi Electric Corp 半導体装置の製造方法
US4894526A (en) 1987-01-15 1990-01-16 American Telephone And Telegraph Company, At&T Bell Laboratories Infrared-radiation detector device
JPS63116421U (zh) 1987-01-23 1988-07-27
GB8703743D0 (en) 1987-02-18 1987-03-25 British Telecomm Semiconductor laser structures
US4775425A (en) 1987-07-27 1988-10-04 Energy Conversion Devices, Inc. P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same
US4751571A (en) 1987-07-29 1988-06-14 General Electric Company Composite visible/thermal-infrared imaging apparatus
US4773944A (en) 1987-09-08 1988-09-27 Energy Conversion Devices, Inc. Large area, low voltage, high current photovoltaic modules and method of fabricating same
US4772335A (en) * 1987-10-15 1988-09-20 Stemcor Corporation Photovoltaic device responsive to ultraviolet radiation
US4968354A (en) 1987-11-09 1990-11-06 Fuji Electric Co., Ltd. Thin film solar cell array
US5146296A (en) 1987-12-03 1992-09-08 Xsirius Photonics, Inc. Devices for detecting and/or imaging single photoelectron
AU612226B2 (en) 1987-12-17 1991-07-04 Unisearch Limited Solar cells with tilted geometrical features
US4886958A (en) 1988-03-25 1989-12-12 Texas Instruments Incorporated Autofocus system for scanning laser inspector or writer
US5182231A (en) 1988-04-07 1993-01-26 Hitachi, Ltd. Method for modifying wiring of semiconductor device
US4838952A (en) 1988-04-29 1989-06-13 Spectrolab, Inc. Controlled reflectance solar cell
US4965784A (en) 1988-05-31 1990-10-23 Sandia Corporation Method and apparatus for bistable optical information storage for erasable optical disks
US6048588A (en) 1988-07-08 2000-04-11 Cauldron Limited Partnership Method for enhancing chemisorption of material
US5081049A (en) 1988-07-18 1992-01-14 Unisearch Limited Sculpted solar cell surfaces
DE3827433C2 (de) 1988-08-12 1994-04-21 Deutsche Aerospace Verfahren zur Herstellung eines flexiblen Trägersubstrates
US5873821A (en) 1992-05-18 1999-02-23 Non-Invasive Technology, Inc. Lateralization spectrophotometer
JPH02152226A (ja) 1988-12-02 1990-06-12 Fujitsu Ltd 半導体装置の製造方法
JP2864518B2 (ja) 1989-03-09 1999-03-03 ソニー株式会社 半導体装置の製造方法
JP2738557B2 (ja) 1989-03-10 1998-04-08 三菱電機株式会社 多層構造太陽電池
US5101260A (en) 1989-05-01 1992-03-31 Energy Conversion Devices, Inc. Multilayer light scattering photovoltaic back reflector and method of making same
US5383217A (en) 1989-05-09 1995-01-17 Nikon Corporation Exposure apparatus with laser source requiring new gas introduction
JPH0348594A (ja) 1989-07-17 1991-03-01 Sanyo Electric Co Ltd バーストゲートパルス発生回路
JPH03131083A (ja) 1989-10-17 1991-06-04 Mitsubishi Electric Corp 半導体レーザ装置の製造方法
JPH0795602B2 (ja) * 1989-12-01 1995-10-11 三菱電機株式会社 太陽電池及びその製造方法
JP2647982B2 (ja) 1989-12-11 1997-08-27 日本電気株式会社 光記憶体
WO1991014284A1 (en) 1990-03-06 1991-09-19 Unisearch Limited Schottky junction charge coupled device
US5164324A (en) 1990-03-29 1992-11-17 The United States Of America As Represented By The Secretary Of The Navy Laser texturing
US5322988A (en) 1990-03-29 1994-06-21 The United States Of America As Represented By The Secretary Of The Navy Laser texturing
JP3154418B2 (ja) 1990-06-21 2001-04-09 キヤノン株式会社 半導体光増幅装置、光通信システム、双方向光通信システム、光通信ネットワーク、及び集積型光ノード
JP2689698B2 (ja) 1990-07-19 1997-12-10 国際電信電話株式会社 αパラメータ符号を反転させた半導体素子
GB9018957D0 (en) 1990-08-31 1990-10-17 Champion Spark Plug Europ Electronic switch comprising a photosensitive semiconductor
US5114876A (en) 1990-12-07 1992-05-19 The United States Of America As Represented By The United States Department Of Energy Selective epitaxy using the gild process
US5223043A (en) 1991-02-11 1993-06-29 The United States Of America As Represented By The United States Department Of Energy Current-matched high-efficiency, multijunction monolithic solar cells
US5234790A (en) 1991-03-04 1993-08-10 E. I. Du Pont De Nemours And Company Peel-apart photosensitive element
JPH04318970A (ja) 1991-04-17 1992-11-10 Mitsubishi Electric Corp 光検知装置の製造方法
US5413100A (en) 1991-07-17 1995-05-09 Effets Biologiques Exercice Non-invasive method for the in vivo determination of the oxygen saturation rate of arterial blood, and device for carrying out the method
US5705828A (en) 1991-08-10 1998-01-06 Sanyo Electric Co., Ltd. Photovoltaic device
JP3047666B2 (ja) 1993-03-16 2000-05-29 富士電機株式会社 シリコンオキサイド半導体膜の成膜方法
US5507881A (en) 1991-09-30 1996-04-16 Fuji Electric Co., Ltd. Thin-film solar cell and method of manufacturing same
DE4134110A1 (de) 1991-10-15 1993-04-22 Wacker Chemitronic Verfahren zum rotationssaegen sproedharter werkstoffe, insbesondere solcher mit durchmessern ueber 200 mm in duenne scheiben vermittels innenlochsaege und vorrichtung zur durchfuehrung des verfahrens
GB2261079B (en) 1991-10-31 1995-06-14 Asahi Optical Co Ltd Surface reflecting mirror
JPH05267695A (ja) 1991-11-06 1993-10-15 Mitsubishi Electric Corp 赤外線撮像装置
JP3048732B2 (ja) * 1991-11-25 2000-06-05 三洋電機株式会社 光起電力装置
US5356488A (en) 1991-12-27 1994-10-18 Rudolf Hezel Solar cell and method for its manufacture
FR2687009B1 (fr) 1992-01-31 1994-04-29 Sgs Thomson Microelectronics Composant de protection pour circuit automobile.
EP0566156B1 (en) 1992-04-17 1997-08-27 Terumo Kabushiki Kaisha Infrared sensor and method for production thereof
US5236863A (en) * 1992-06-01 1993-08-17 National Semiconductor Corporation Isolation process for VLSI
US5923071A (en) 1992-06-12 1999-07-13 Seiko Instruments Inc. Semiconductor device having a semiconductor film of low oxygen concentration
JP3194021B2 (ja) 1992-07-03 2001-07-30 経済産業省産業技術総合研究所長 レ−ザアニ−リング装置
JPH0690014A (ja) 1992-07-22 1994-03-29 Mitsubishi Electric Corp 薄型太陽電池及びその製造方法，エッチング方法及び自動エッチング装置，並びに半導体装置の製造方法
JPH0653538A (ja) 1992-07-28 1994-02-25 Toshiba Corp 半導体受光素子
US5244817A (en) 1992-08-03 1993-09-14 Eastman Kodak Company Method of making backside illuminated image sensors
US5296045A (en) 1992-09-04 1994-03-22 United Solar Systems Corporation Composite back reflector for photovoltaic device
JPH06104414A (ja) 1992-09-18 1994-04-15 Toshiba Corp 固体撮像装置
DE4234471C1 (de) 1992-10-13 1994-01-20 Fraunhofer Ges Forschung Vorrichtung zur Absorption infraroter Strahlung
US5346850A (en) 1992-10-29 1994-09-13 Regents Of The University Of California Crystallization and doping of amorphous silicon on low temperature plastic
JP3431647B2 (ja) 1992-10-30 2003-07-28 株式会社半導体エネルギー研究所 半導体装置とその作製方法およびメモリ装置の作製方法およびレーザードーピング処理方法
JP3200484B2 (ja) 1992-12-04 2001-08-20 富士ゼロックス株式会社 自己倍周波レーザー素子
FR2699015B1 (fr) 1992-12-04 1995-02-24 Sgs Thomson Microelectronics Dispositif de protection contre des surtensions.
US5373182A (en) 1993-01-12 1994-12-13 Santa Barbara Research Center Integrated IR and visible detector
JP3526308B2 (ja) 1993-02-18 2004-05-10 株式会社日立製作所 受光素子
JP3315191B2 (ja) 1993-03-22 2002-08-19 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
FR2704094B1 (fr) 1993-04-13 1995-07-07 Sgs Thomson Microelectronics Réseau de diodes monolithique.
US20020037517A1 (en) 1993-05-28 2002-03-28 Hutchens T. William Methods for sequencing biopolymers
JP2590690B2 (ja) 1993-06-15 1997-03-12 日本電気株式会社 半導体装置
US5473138A (en) 1993-07-13 1995-12-05 Singh; Rajiv K. Method for increasing the surface area of ceramics, metals and composites
US5381431A (en) 1993-08-13 1995-01-10 Massachusetts Institute Of Technology Picosecond Q-switched microlasers
FR2710455B1 (fr) 1993-09-24 1995-12-15 Frederic Ghirardi Procédé de réalisation d'une structure intégrée monolithique incorporant des composants opto-électroniques et structure ainsi réalisée.
FR2711276B1 (fr) 1993-10-11 1995-12-01 Neuchatel Universite Cellule photovoltaïque et procédé de fabrication d'une telle cellule.
TW299897U (en) 1993-11-05 1997-03-01 Semiconductor Energy Lab A semiconductor integrated circuit
US5714404A (en) 1993-11-18 1998-02-03 Regents Of The University Of California Fabrication of polycrystalline thin films by pulsed laser processing
JP3271222B2 (ja) 1994-02-22 2002-04-02 ソニー株式会社 固体撮像装置
US5792280A (en) 1994-05-09 1998-08-11 Sandia Corporation Method for fabricating silicon cells
US5600130A (en) 1994-06-17 1997-02-04 The Regents Of The University Of Colorado Two-dimensional optoelectronic array module
US5523570A (en) 1994-07-15 1996-06-04 Loral Infrared & Imaging Systems, Inc. Double direct injection dual band sensor readout input circuit
US5510271A (en) 1994-09-09 1996-04-23 Georgia Tech Research Corporation Processes for producing low cost, high efficiency silicon solar cells
JP3119090B2 (ja) 1994-10-05 2000-12-18 株式会社日立製作所 水中レーザ加工装置及びその装置を用いた水中施工方法
FI97186C (fi) 1994-11-11 1996-10-25 Nokia Telecommunications Oy Ylikuormituksen esto tietoliikenneverkon solmussa
FR2727571A1 (fr) 1994-11-25 1996-05-31 Sgs Thomson Microelectronics Thyristor a sensibilite en retournement controlee
US5627081A (en) 1994-11-29 1997-05-06 Midwest Research Institute Method for processing silicon solar cells
US5589704A (en) 1995-01-27 1996-12-31 Lucent Technologies Inc. Article comprising a Si-based photodetector
JP3211604B2 (ja) 1995-02-03 2001-09-25 株式会社日立製作所 半導体装置
CA2168484C (en) 1995-03-13 2000-12-05 Mehmet Reha Civanlar Client-server architecture using internet and public switched networks
US5626687A (en) 1995-03-29 1997-05-06 The United States Of America As Represented By The United States Department Of Energy Thermophotovoltaic in-situ mirror cell
JP3287173B2 (ja) 1995-04-07 2002-05-27 三菱電機株式会社 赤外線検出素子
US5569624A (en) 1995-06-05 1996-10-29 Regents Of The University Of California Method for shallow junction formation
US5758644A (en) 1995-06-07 1998-06-02 Masimo Corporation Manual and automatic probe calibration
FR2735225B1 (fr) 1995-06-12 1997-09-05 Motorola Semiconducteurs Capteur de position optoelectronique et systeme de compensation pour un tel capteur
DE19522539C2 (de) 1995-06-21 1997-06-12 Fraunhofer Ges Forschung Solarzelle mit einem, eine Oberflächentextur aufweisenden Emitter sowie Verfahren zur Herstellung derselben
FR2735907B1 (fr) 1995-06-22 1997-09-05 Sgs Thomson Microelectronics Assemblage monolitique de composants semiconducteurs incluant une diode rapide
JP3143591B2 (ja) 1995-09-14 2001-03-07 キヤノン株式会社 表示装置
GB9520901D0 (en) 1995-10-12 1995-12-13 Philips Electronics Nv Electronic device manufacture
US5641362A (en) 1995-11-22 1997-06-24 Ebara Solar, Inc. Structure and fabrication process for an aluminum alloy junction self-aligned back contact silicon solar cell
JP3416364B2 (ja) 1995-11-27 2003-06-16 三洋電機株式会社 光起電力素子及びその製造方法
US5597621A (en) 1995-12-01 1997-01-28 University Of Florida Method of manufacturing photoluminescing semiconductor material using lasers
JP3608858B2 (ja) 1995-12-18 2005-01-12 三菱電機株式会社 赤外線検出器及びその製造方法
US6072117A (en) 1996-02-27 2000-06-06 Canon Kabushiki Kaisha Photovoltaic device provided with an opaque substrate having a specific irregular surface structure
JP3444081B2 (ja) 1996-02-28 2003-09-08 株式会社日立製作所 ダイオード及び電力変換装置
US5641969A (en) 1996-03-28 1997-06-24 Applied Materials, Inc. Ion implantation apparatus
US5766127A (en) 1996-04-15 1998-06-16 Ohmeda Inc. Method and apparatus for improved photoplethysmographic perfusion-index monitoring
JP3516552B2 (ja) 1996-04-30 2004-04-05 シャープ株式会社 受光素子の製造方法
US5871826A (en) 1996-05-30 1999-02-16 Xerox Corporation Proximity laser doping technique for electronic materials
EP0904675B1 (en) 1996-06-14 2000-10-18 Matsushita Electric Industrial Co., Ltd. Screen printing method and screen printing apparatus
US6133119A (en) 1996-07-08 2000-10-17 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method manufacturing same
JP2833588B2 (ja) 1996-07-30 1998-12-09 日本電気株式会社 フォトディテクタおよびその製造方法
DE19637182A1 (de) 1996-09-12 1998-03-19 Wacker Siltronic Halbleitermat Verfahren zur Herstellung von Halbleiterscheiben aus Silicium mit geringer Defektdichte
KR100269287B1 (ko) 1996-11-22 2000-11-01 윤종용 반도체장치의hsg형성방법
US5802091A (en) 1996-11-27 1998-09-01 Lucent Technologies Inc. Tantalum-aluminum oxide coatings for semiconductor devices
JP3917698B2 (ja) 1996-12-12 2007-05-23 株式会社半導体エネルギー研究所 レーザーアニール方法およびレーザーアニール装置
US5751005A (en) 1996-12-20 1998-05-12 Raytheon Company Low-crosstalk column differencing circuit architecture for integrated two-color focal plane arrays
US6080988A (en) 1996-12-20 2000-06-27 Nikon Corporation Optically readable radiation-displacement-conversion devices and methods, and image-rendering apparatus and methods employing same
US5808350A (en) 1997-01-03 1998-09-15 Raytheon Company Integrated IR, visible and NIR sensor and methods of fabricating same
US6106689A (en) 1997-01-20 2000-08-22 Canon Kabushiki Kaisha Process for forming zinc oxide film and processes for producing semiconductor device substrate and photo-electricity generating device using the film
JPH10209168A (ja) 1997-01-24 1998-08-07 Nec Corp 半導体装置の製造方法
JPH10209039A (ja) 1997-01-27 1998-08-07 Nikon Corp 投影露光方法及び投影露光装置
ES2244049T3 (es) 1997-03-03 2005-12-01 British Telecommunications Public Limited Company Control de seguridad.
EP0867701A1 (en) 1997-03-28 1998-09-30 Interuniversitair Microelektronica Centrum Vzw Method of fabrication of an infrared radiation detector and more particularly an infrared sensitive bolometer
US6117499A (en) 1997-04-09 2000-09-12 Komag, Inc. Micro-texture media made by polishing of a selectively irradiated surface
US5886391A (en) * 1997-04-18 1999-03-23 Micron Technology, Inc. Antireflective structure
US5781392A (en) 1997-05-12 1998-07-14 Tii Industries, Inc. Balanced overvoltage protector for a dual-wire system
JP3924352B2 (ja) 1997-06-05 2007-06-06 浜松ホトニクス株式会社 裏面照射型受光デバイス
US5918140A (en) 1997-06-16 1999-06-29 The Regents Of The University Of California Deposition of dopant impurities and pulsed energy drive-in
DE19729396A1 (de) 1997-07-09 1999-01-14 Siemens Ag Elektrischer Kontakt für ein II-VI-Halbleiterbauelement und Verfahren zum Herstellen des elektrischen Kontaktes
US6107618A (en) 1997-07-14 2000-08-22 California Institute Of Technology Integrated infrared and visible image sensors
US6097031A (en) 1997-07-25 2000-08-01 Honeywell Inc. Dual bandwith bolometer
JPH1177348A (ja) 1997-08-29 1999-03-23 Canon Inc 溶接方法及び光起電力素子
US6107641A (en) 1997-09-10 2000-08-22 Xerox Corporation Thin film transistor with reduced parasitic capacitance and reduced feed-through voltage
IL135139A0 (en) 1997-09-19 2001-05-20 Nikon Corp Stage apparatus, scanning type exposure apparatus, and device produced with the same
JPH1197724A (ja) 1997-09-25 1999-04-09 Citizen Watch Co Ltd 太陽電池およびその製造方法
JP3168961B2 (ja) 1997-10-06 2001-05-21 住友電気工業株式会社 ダイヤモンド基板及びダイヤモンド基板の評価方法並びにダイヤモンド表面弾性波フィルタ
US6041246A (en) 1997-10-14 2000-03-21 Transonic Systems, Inc. Single light sensor optical probe for monitoring blood parameters and cardiovascular measurements
DE19752208A1 (de) 1997-11-25 1999-06-02 Bosch Gmbh Robert Thermischer Membransensor und Verfahren zu seiner Herstellung
JPH11168069A (ja) 1997-12-03 1999-06-22 Nec Corp 半導体装置の製造方法
US6128379A (en) 1997-12-03 2000-10-03 Telcordia Technologies, Inc. Intelligent data peripheral systems and methods
US6229192B1 (en) 1998-01-27 2001-05-08 Ois Optical Imaging Systems, Inc. Image sensor or LCD including switching pin diodes
US6131512A (en) 1998-02-03 2000-10-17 Agfa-Gevaert, N.V. Printing master comprising strain gauges
JP4208281B2 (ja) 1998-02-26 2009-01-14 キヤノン株式会社 積層型光起電力素子
DE19811878C2 (de) 1998-03-18 2002-09-19 Siemens Solar Gmbh Verfahren und Ätzlösung zum naßchemischen pyramidalen Texturätzen von Siliziumoberflächen
JP3592075B2 (ja) 1998-04-16 2004-11-24 松下電器産業株式会社 円板形状体の位置決め装置
US6756104B2 (en) 1998-04-21 2004-06-29 Lsp Technologies, Inc. Surface finishes on laser rods and slabs for laser peening systems
AU3775199A (en) 1998-04-29 1999-11-16 Carnegie Wave Energy Limited Apparatus and method of monitoring a subject's eyes using two different wavelengths of light
US6160833A (en) 1998-05-06 2000-12-12 Xerox Corporation Blue vertical cavity surface emitting laser
JP4139931B2 (ja) 1998-06-27 2008-08-27 マグナチップセミコンダクター有限会社 イメ―ジセンサのピンドフォトダイオ―ド及びその製造方法
AUPP437598A0 (en) 1998-06-29 1998-07-23 Unisearch Limited A self aligning method for forming a selective emitter and metallization in a solar cell
US6198147B1 (en) 1998-07-06 2001-03-06 Intel Corporation Detecting infrared and visible light
DE19838439C1 (de) 1998-08-24 2000-04-27 Fraunhofer Ges Forschung Dünnfilmphotodiode und Verfahren zur Herstellung
US6465860B2 (en) 1998-09-01 2002-10-15 Kabushiki Kaisha Toshiba Multi-wavelength semiconductor image sensor and method of manufacturing the same
EP0986110A1 (de) 1998-09-10 2000-03-15 Electrowatt Technology Innovation AG Lichtempfindliches Halbleiterelement und Verwendung zur Regelung von Flammen
US6721585B1 (en) 1998-10-15 2004-04-13 Sensidyne, Inc. Universal modular pulse oximeter probe for use with reusable and disposable patient attachment devices
US6071796A (en) 1998-10-30 2000-06-06 Sharp Laboratories Of America, Inc. Method of controlling oxygen incorporation during crystallization of silicon film by excimer laser anneal in air ambient
US6121130A (en) 1998-11-16 2000-09-19 Chartered Semiconductor Manufacturing Ltd. Laser curing of spin-on dielectric thin films
US6377699B1 (en) 1998-11-25 2002-04-23 Iridian Technologies, Inc. Iris imaging telephone security module and method
US6111300A (en) 1998-12-01 2000-08-29 Agilent Technologies Multiple color detection elevated pin photo diode active pixel sensor
US6333485B1 (en) 1998-12-11 2001-12-25 International Business Machines Corporation Method for minimizing sample damage during the ablation of material using a focused ultrashort pulsed beam
US6049058A (en) 1998-12-15 2000-04-11 Lsp Technologies, Inc. Laser peening process and apparatus with uniform pressure pulse confinement
US6420706B1 (en) 1999-01-08 2002-07-16 Sarnoff Corporation Optical detectors using nulling for high linearity and large dynamic range
US6429036B1 (en) 1999-01-14 2002-08-06 Micron Technology, Inc. Backside illumination of CMOS image sensor
US6514840B2 (en) 1999-04-13 2003-02-04 International Business Machines Corporation Micro heating of selective regions
US6876003B1 (en) 1999-04-15 2005-04-05 Sumitomo Electric Industries, Ltd. Semiconductor light-emitting device, method of manufacturing transparent conductor film and method of manufacturing compound semiconductor light-emitting device
US6331445B1 (en) 1999-05-07 2001-12-18 National Research Council Of Canada Phototonic device with strain-induced three dimensional growth morphology
US6727521B2 (en) 2000-09-25 2004-04-27 Foveon, Inc. Vertical color filter detector group and array
JP2001007381A (ja) 1999-06-24 2001-01-12 Nippon Hoso Kyokai <Nhk> 光電変換膜とその作製方法
JP2003504856A (ja) 1999-07-02 2003-02-04 ディジラッド・コーポレーション 半導体装置に対する間接的裏面コンタクト
JP2001024936A (ja) 1999-07-09 2001-01-26 Matsushita Electric Ind Co Ltd 画像取込装置
US6657178B2 (en) 1999-07-20 2003-12-02 Intevac, Inc. Electron bombarded passive pixel sensor imaging
JP3422290B2 (ja) 1999-07-22 2003-06-30 日本電気株式会社 半導体薄膜の製造方法
US6168965B1 (en) 1999-08-12 2001-01-02 Tower Semiconductor Ltd. Method for making backside illuminated image sensor
US6290713B1 (en) 1999-08-24 2001-09-18 Thomas A. Russell Flexible illuminators for phototherapy
US6313901B1 (en) 1999-09-01 2001-11-06 National Semiconductor Corporation Liquid crystal display fabrication process using a final rapid thermal anneal
US7112545B1 (en) 1999-09-10 2006-09-26 The Board Of Trustees Of The University Of Arkansas Passivation of material using ultra-fast pulsed laser
US6486522B1 (en) 1999-09-28 2002-11-26 Pictos Technologies, Inc. Light sensing system with high pixel fill factor
US6984571B1 (en) 1999-10-01 2006-01-10 Ziptronix, Inc. Three dimensional device integration method and integrated device
WO2001031842A2 (en) 1999-10-26 2001-05-03 Telefonaktiebolaget Lm Ericsson (Publ) System and method for improved resource management in an integrated telecommunications network having a packet-switched network portion and a circuit-switched network portion
US6562705B1 (en) 1999-10-26 2003-05-13 Kabushiki Kaisha Toshiba Method and apparatus for manufacturing semiconductor element
EP1096577B9 (en) 1999-10-27 2016-06-01 Kaneka Corporation Method of producing a thin-film photovoltaic device
US6867806B1 (en) 1999-11-04 2005-03-15 Taiwan Advanced Sensors Corporation Interlace overlap pixel design for high sensitivity CMOS image sensors
WO2001035601A1 (en) 1999-11-10 2001-05-17 Rainfinity, Inc. Distributed traffic controlling system and method for network data
US6272768B1 (en) 1999-11-12 2001-08-14 Michael J. Danese Apparatus for treating an object using ultra-violet light
US6457478B1 (en) 1999-11-12 2002-10-01 Michael J. Danese Method for treating an object using ultra-violet light
JP4124396B2 (ja) 1999-12-17 2008-07-23 独立行政法人科学技術振興機構 ホログラムの製造方法および装置
GB9930257D0 (en) 1999-12-22 2000-02-09 Suisse Electronique Microtech Optoelectronic sensor
KR100683390B1 (ko) 1999-12-28 2007-02-15 매그나칩 반도체 유한회사 이미지센서의 제조 방법
JP2001189478A (ja) 1999-12-28 2001-07-10 Sanyo Electric Co Ltd 半導体素子及びその製造方法
US6586318B1 (en) 1999-12-28 2003-07-01 Xerox Corporation Thin phosphorus nitride film as an N-type doping source used in laser doping technology
US6501065B1 (en) 1999-12-29 2002-12-31 Intel Corporation Image sensor using a thin film photodiode above active CMOS circuitry
US6366804B1 (en) 1999-12-29 2002-04-02 Ge Medical Systems Information Technologies, Inc. Method of and apparatus for Identifying a portion of a waveform representing a physiological event
US6291302B1 (en) 2000-01-14 2001-09-18 Advanced Micro Devices, Inc. Selective laser anneal process using highly reflective aluminum mask
JP3398638B2 (ja) 2000-01-28 2003-04-21 科学技術振興事業団 発光ダイオードおよび半導体レーザーとそれらの製造方法
JP2001236671A (ja) 2000-02-22 2001-08-31 Pioneer Electronic Corp 光ピックアップ装置及びレーザダイオードチップ
US6413135B1 (en) * 2000-02-29 2002-07-02 Micron Technology, Inc. Spacer fabrication for flat panel displays
EP1139409A3 (en) 2000-02-29 2003-01-02 Agere Systems Guardian Corporation Selective laser anneal on semiconductor material
JP2001257927A (ja) 2000-03-09 2001-09-21 Technosonic:Kk 被写体追尾装置
US6830993B1 (en) 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
FR2807569B1 (fr) 2000-04-10 2004-08-27 Centre Nat Rech Scient Perfectionnement apportes aux diodes schottky
US6483116B1 (en) 2000-04-25 2002-11-19 Innovative Technology Licensing, Llc High performance ultraviolet imager for operation at room temperature
JP2001326201A (ja) 2000-05-16 2001-11-22 Ebara Corp ポリッシング装置
US6682383B2 (en) 2000-05-17 2004-01-27 Electronics And Telecommunications Research Institute Cathode structure for field emission device and method of fabricating the same
JP3713418B2 (ja) 2000-05-30 2005-11-09 光正 小柳 ３次元画像処理装置の製造方法
US6483929B1 (en) 2000-06-08 2002-11-19 Tarian Llc Method and apparatus for histological and physiological biometric operation and authentication
US7211214B2 (en) 2000-07-18 2007-05-01 Princeton University Laser assisted direct imprint lithography
JP2002043594A (ja) 2000-07-21 2002-02-08 Sharp Corp 光透過型薄膜太陽電池モジュール
US6680495B2 (en) 2000-08-04 2004-01-20 Amberwave Systems Corporation Silicon wafer with embedded optoelectronic material for monolithic OEIC
US6388204B1 (en) 2000-08-29 2002-05-14 International Business Machines Corporation Composite laminate circuit structure and methods of interconnecting the same
JP2002072980A (ja) 2000-08-31 2002-03-12 Nec Corp カラー映像表示方法および装置
DE10042733A1 (de) 2000-08-31 2002-03-28 Inst Physikalische Hochtech Ev Multikristalline laserkristallisierte Silicium-Dünnschicht-Solarzelle auf transparentem Substrat
US6580053B1 (en) 2000-08-31 2003-06-17 Sharp Laboratories Of America, Inc. Apparatus to control the amount of oxygen incorporated into polycrystalline silicon film during excimer laser processing of silicon films
JP4919546B2 (ja) 2000-09-18 2012-04-18 東芝モバイルディスプレイ株式会社 多結晶シリコン膜の形成方法
US6900839B1 (en) 2000-09-29 2005-05-31 Rockwell Science Center, Llc High gain detector amplifier with enhanced dynamic range for single photon read-out of photodetectors
IL138884A (en) 2000-10-05 2006-07-05 Conmed Corp Pulse oximeter and a method of its operation
TW466785B (en) 2000-10-11 2001-12-01 Ultratera Corp Thin-type photosensitive semiconductor device
US6689209B2 (en) 2000-11-03 2004-02-10 Memc Electronic Materials, Inc. Process for preparing low defect density silicon using high growth rates
US7352454B2 (en) 2000-11-09 2008-04-01 Canesta, Inc. Methods and devices for improved charge management for three-dimensional and color sensing
JP3994655B2 (ja) 2000-11-14 2007-10-24 住友電気工業株式会社 半導体受光素子
US6498336B1 (en) 2000-11-15 2002-12-24 Pixim, Inc. Integrated light sensors with back reflectors for increased quantum efficiency
WO2002041363A2 (en) 2000-11-16 2002-05-23 Solarflex Technologies, Inc. System and methods for laser assisted deposition
US20020060322A1 (en) 2000-11-20 2002-05-23 Hiroshi Tanabe Thin film transistor having high mobility and high on-current and method for manufacturing the same
JP4461657B2 (ja) 2000-12-07 2010-05-12 セイコーエプソン株式会社 光電変換素子
JP2002190386A (ja) 2000-12-20 2002-07-05 Daicel Chem Ind Ltd 有機エレクトロルミネッセンス素子用材料およびその製造方法
US6797920B2 (en) 2000-12-20 2004-09-28 Daicel Chemical Industries, Ltd. Material for organic electroluminescent device and its manufacturing method
US6509204B2 (en) 2001-01-29 2003-01-21 Xoptix, Inc. Transparent solar cell and method of fabrication
FR2820883B1 (fr) 2001-02-12 2003-06-13 St Microelectronics Sa Photodiode a grande capacite
US6782154B2 (en) 2001-02-12 2004-08-24 Rensselaer Polytechnic Institute Ultrafast all-optical switch using carbon nanotube polymer composites
US6597025B2 (en) 2001-03-15 2003-07-22 Koninklijke Philips Electronics N.V. Light sensitive semiconductor component
US6734455B2 (en) 2001-03-15 2004-05-11 Micron Technology, Inc. Agglomeration elimination for metal sputter deposition of chalcogenides
JP2002343993A (ja) 2001-03-15 2002-11-29 Canon Inc 薄膜多結晶太陽電池及びその形成方法
JP4433131B2 (ja) 2001-03-22 2010-03-17 キヤノン株式会社 シリコン系薄膜の形成方法
JP2002289879A (ja) 2001-03-27 2002-10-04 Toshiba Corp ダイオード
GB0108795D0 (en) 2001-04-07 2001-05-30 Power Innovations Ltd Overvoltage protection device
JP2004537161A (ja) 2001-04-11 2004-12-09 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 高抵抗率ｃｚシリコンにおけるサーマルドナー生成の制御
US6586738B2 (en) 2001-04-13 2003-07-01 Mcnc Electromagnetic radiation detectors having a micromachined electrostatic chopper device
DE10124030A1 (de) * 2001-05-16 2002-11-21 Atmel Germany Gmbh Verfahren zur Herstellung eines Silizium-Wafers
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7390689B2 (en) 2001-05-25 2008-06-24 President And Fellows Of Harvard College Systems and methods for light absorption and field emission using microstructured silicon
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7354792B2 (en) 2001-05-25 2008-04-08 President And Fellows Of Harvard College Manufacture of silicon-based devices having disordered sulfur-doped surface layers
US6796144B2 (en) 2001-05-30 2004-09-28 Battelle Memorial Institute System and method for glass processing and temperature sensing
US6735225B2 (en) 2001-06-07 2004-05-11 Lambda Physik Ag Chirp compensation method and apparatus
US7075079B2 (en) 2001-06-27 2006-07-11 Wood Roland A Sensor for dual wavelength bands
FR2827707B1 (fr) 2001-07-20 2003-11-21 Fr De Detecteurs Infrarouges S Procede de realisation d'un detecteur bolometrique et detecteur realise selon ce procede
US6720595B2 (en) 2001-08-06 2004-04-13 International Business Machines Corporation Three-dimensional island pixel photo-sensor
JP2003058269A (ja) 2001-08-09 2003-02-28 Mitsubishi Heavy Ind Ltd 個人認証システム
JP2003069061A (ja) 2001-08-24 2003-03-07 Sharp Corp 積層型光電変換素子
US6777317B2 (en) 2001-08-29 2004-08-17 Ultratech Stepper, Inc. Method for semiconductor gate doping
KR100390919B1 (ko) 2001-09-05 2003-07-12 주식회사 하이닉스반도체 반도체소자의 제조방법
US6803555B1 (en) 2001-09-07 2004-10-12 Indigo Systems Corporation Two-stage auto-zero amplifier circuit for electro-optical arrays
JP2003104121A (ja) 2001-09-27 2003-04-09 Matsushita Electric Ind Co Ltd 後方視界表示装置
US6607927B2 (en) 2001-09-28 2003-08-19 Agere Systems, Inc. Method and apparatus for monitoring in-line copper contamination
CA2359269A1 (en) 2001-10-17 2003-04-17 Biodentity Systems Corporation Face imaging system for recordal and automated identity confirmation
FR2832224B1 (fr) 2001-11-15 2004-01-16 Commissariat Energie Atomique Dispositif electronique monolithique multicouches et procede de realisation d'un tel dispositif
US7109517B2 (en) 2001-11-16 2006-09-19 Zaidi Saleem H Method of making an enhanced optical absorption and radiation tolerance in thin-film solar cells and photodetectors
US7202102B2 (en) 2001-11-27 2007-04-10 Jds Uniphase Corporation Doped absorption for enhanced responsivity for high speed photodiodes
EP1461834A4 (en) * 2001-11-29 2010-06-09 Origin Energy Solar Pty Ltd SEMICONDUCTOR texturing
US6759262B2 (en) 2001-12-18 2004-07-06 Agilent Technologies, Inc. Image sensor with pixel isolation system and manufacturing method therefor
FR2834128B1 (fr) 2001-12-21 2005-03-04 St Microelectronics Sa Dispositif de protection bidirectionnel a faible capacite
US6667528B2 (en) 2002-01-03 2003-12-23 International Business Machines Corporation Semiconductor-on-insulator lateral p-i-n photodetector with a reflecting mirror and backside contact and method for forming the same
US6923625B2 (en) 2002-01-07 2005-08-02 Integrated Sensing Systems, Inc. Method of forming a reactive material and article formed thereby
KR100843001B1 (ko) 2002-01-16 2008-07-01 동화약품공업주식회사 구강점막 부착형 필름제제
JP2003242125A (ja) 2002-02-18 2003-08-29 Canon Inc 携帯情報端末、認証補助端末及び個人認証方法
JP2003258285A (ja) 2002-02-27 2003-09-12 Sharp Corp 表面凹凸構造の作製方法及び太陽電池
US6583936B1 (en) 2002-03-11 2003-06-24 Eastman Kodak Company Patterned roller for the micro-replication of complex lenses
US20050088634A1 (en) 2002-03-15 2005-04-28 Nikon Corporation Exposure system and device production process
JP2003308130A (ja) 2002-04-15 2003-10-31 Matsushita Electric Ind Co Ltd 情報装置
US7012643B2 (en) 2002-05-08 2006-03-14 Ball Aerospace & Technologies Corp. One chip, low light level color camera
JP4123415B2 (ja) 2002-05-20 2008-07-23 ソニー株式会社 固体撮像装置
US6946715B2 (en) 2003-02-19 2005-09-20 Micron Technology, Inc. CMOS image sensor and method of fabrication
JP2004047682A (ja) 2002-07-11 2004-02-12 Toshiba Corp 固体撮像装置
US20060006482A1 (en) 2002-07-16 2006-01-12 Stmicroelectronics N.V. Tfa image sensor with stability-optimized photodiode
KR100460066B1 (ko) 2002-07-19 2004-12-04 주식회사 하이닉스반도체 반도체소자의 제조방법
US7078702B2 (en) 2002-07-25 2006-07-18 General Electric Company Imager
GB2392307B8 (en) 2002-07-26 2006-09-20 Detection Technology Oy Semiconductor structure for imaging detectors
US7705349B2 (en) 2002-08-29 2010-04-27 Micron Technology, Inc. Test inserts and interconnects with electrostatic discharge structures
JP4403687B2 (ja) 2002-09-18 2010-01-27 ソニー株式会社 固体撮像装置およびその駆動制御方法
EP1540733B1 (en) 2002-09-19 2008-07-16 Quantum Semiconductor, LLC Light-sensing device
WO2004032197A2 (en) 2002-10-03 2004-04-15 Pan Jit Americas, Inc. Low temperature texturing layer to enhance adhesion of subsequent layers
CA2408483C (en) 2002-10-17 2011-01-04 Yujie Han Laser chemical fabrication of nanostructures
US6929974B2 (en) 2002-10-18 2005-08-16 Motorola, Inc. Feedthrough design and method for a hermetically sealed microdevice
KR20040036087A (ko) 2002-10-23 2004-04-30 주식회사 하이닉스반도체 광의 파장에 따라 포토다이오드의 깊이가 다른 씨모스이미지센서 및 그 제조 방법
JP4387091B2 (ja) 2002-11-05 2009-12-16 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
DE10253679A1 (de) 2002-11-18 2004-06-03 Infineon Technologies Ag Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
TW569351B (en) 2002-11-22 2004-01-01 Au Optronics Corp Excimer laser anneal apparatus and the application of the same
US6753585B1 (en) 2002-12-05 2004-06-22 National Semiconductor Corporation Vertical color photo-detector with increased sensitivity and compatible video interface
CN100388511C (zh) 2002-12-10 2008-05-14 北京力诺桑普光伏高科技有限公司 单晶硅太阳能电池的表面结构及其制作方法
JP2004193350A (ja) 2002-12-11 2004-07-08 Sharp Corp 太陽電池セルおよびその製造方法
US7211501B2 (en) 2002-12-12 2007-05-01 Intel Corporation Method and apparatus for laser annealing
US7453129B2 (en) 2002-12-18 2008-11-18 Noble Peak Vision Corp. Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
EP1434264A3 (en) 2002-12-27 2017-01-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method using the transfer technique
DE10305009A1 (de) 2003-02-07 2004-09-02 Robert Bosch Gmbh Vorrichtung und Verfahren zur Bilderzeugung
US7176528B2 (en) 2003-02-18 2007-02-13 Corning Incorporated Glass-based SOI structures
DE10310740A1 (de) 2003-03-10 2004-09-30 Forschungszentrum Jülich GmbH Verfahren zur Herstellung einer spannungsrelaxierten Schichtstruktur auf einem nicht gitterangepassten Substrat, sowie Verwendung eines solchen Schichtsystems in elektronischen und/oder optoelektronischen Bauelementen
JP2004273886A (ja) 2003-03-11 2004-09-30 Hitachi Cable Ltd 結晶薄膜半導体装置および光起電力装置
JP2004273887A (ja) 2003-03-11 2004-09-30 Hitachi Cable Ltd 結晶薄膜半導体装置及び太陽電池素子
AU2003213430A1 (en) 2003-03-19 2004-10-11 Fujitsu Limited Semiconductor device, process for producing the same and imaging device
US6864156B1 (en) 2003-04-04 2005-03-08 Xilinx, Inc. Semiconductor wafer with well contacts on back side
IL155536A0 (en) 2003-04-21 2003-11-23 Yissum Res Dev Co Voltage tunable integrated infrared imager
TWI227913B (en) 2003-05-02 2005-02-11 Au Optronics Corp Method of fabricating polysilicon film by excimer laser crystallization process
US7161173B2 (en) 2003-05-20 2007-01-09 Burgener Ii Robert H P-type group II-VI semiconductor compounds
US7273788B2 (en) 2003-05-21 2007-09-25 Micron Technology, Inc. Ultra-thin semiconductors bonded on glass substrates
US7008854B2 (en) 2003-05-21 2006-03-07 Micron Technology, Inc. Silicon oxycarbide substrates for bonded silicon on insulator
US6911375B2 (en) 2003-06-02 2005-06-28 International Business Machines Corporation Method of fabricating silicon devices on sapphire with wafer bonding at low temperature
US20040256561A1 (en) 2003-06-17 2004-12-23 Allyson Beuhler Wide band light sensing pixel array
US7560750B2 (en) 2003-06-26 2009-07-14 Kyocera Corporation Solar cell device
US7148528B2 (en) 2003-07-02 2006-12-12 Micron Technology, Inc. Pinned photodiode structure and method of formation
US7247527B2 (en) 2003-07-31 2007-07-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device, and laser irradiation apparatus
US7358498B2 (en) 2003-08-04 2008-04-15 Technest Holdings, Inc. System and a method for a smart surveillance system
US6984816B2 (en) 2003-08-13 2006-01-10 Motorola, Inc. Vertically integrated photosensor for CMOS imagers
US6927432B2 (en) 2003-08-13 2005-08-09 Motorola, Inc. Vertically integrated photosensor for CMOS imagers
AP2149A (en) 2003-08-14 2010-09-01 Univ Johannesburg Method for the preparation of group IB-IIIA-VIA quaternary or higher alloy semiconductor films.
JP4442157B2 (ja) 2003-08-20 2010-03-31 ソニー株式会社 光電変換装置及び固体撮像装置
US7067385B2 (en) 2003-09-04 2006-06-27 Micron Technology, Inc. Support for vertically oriented capacitors during the formation of a semiconductor device
TWI246783B (en) 2003-09-24 2006-01-01 Matsushita Electric Works Ltd Light-emitting device and its manufacturing method
EP1519422B1 (en) 2003-09-24 2018-05-16 Panasonic Intellectual Property Management Co., Ltd. Photovoltaic cell and its fabrication method
US7271405B2 (en) 2003-10-14 2007-09-18 Stc.Unm Intersubband detector with avalanche multiplier region
KR100543532B1 (ko) 2003-10-24 2006-01-20 준 신 이 모듈일체형 태양전지 및 그 제조방법
ATE367587T1 (de) 2003-10-29 2007-08-15 Fraunhofer Ges Forschung Abstandssensor und verfahren zur abstandserfassung
JP4507560B2 (ja) 2003-10-30 2010-07-21 日本電気株式会社 薄膜デバイス基板の製造方法
US7084460B2 (en) * 2003-11-03 2006-08-01 International Business Machines Corporation Method for fabricating SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) substrates
US7285433B2 (en) 2003-11-06 2007-10-23 General Electric Company Integrated devices with optical and electrical isolation and method for making
WO2005048319A2 (en) 2003-11-06 2005-05-26 Yale University Large-area detector
JP4578797B2 (ja) 2003-11-10 2010-11-10 パナソニック株式会社 撮像装置
US20050101160A1 (en) 2003-11-12 2005-05-12 Diwakar Garg Silicon thin film transistors and solar cells on plastic substrates
US7542085B2 (en) 2003-11-26 2009-06-02 Aptina Imaging Corporation Image sensor with a capacitive storage node linked to transfer gate
KR100603318B1 (ko) 2003-11-27 2006-07-20 삼성에스디아이 주식회사 반도체의 레이저 어닐링용 인라인 처리 장치
US7123298B2 (en) 2003-12-18 2006-10-17 Avago Technologies Sensor Ip Pte. Ltd. Color image sensor with imaging elements imaging on respective regions of sensor elements
WO2005065347A2 (en) 2003-12-29 2005-07-21 Sherwood Information Partners, Inc. System and method for mass storage using multiple-hard-disk-drive enclosure
JP3729826B2 (ja) 2004-01-09 2005-12-21 松下電器産業株式会社 固体撮像装置の製造方法
US20050150542A1 (en) 2004-01-13 2005-07-14 Arun Madan Stable Three-Terminal and Four-Terminal Solar Cells and Solar Cell Panels Using Thin-Film Silicon Technology
GB0401578D0 (en) 2004-01-24 2004-02-25 Koninkl Philips Electronics Nv Phototransistor
US6897118B1 (en) 2004-02-11 2005-05-24 Chartered Semiconductor Manufacturing Ltd. Method of multiple pulse laser annealing to activate ultra-shallow junctions
US7663057B2 (en) 2004-02-19 2010-02-16 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell
US7492027B2 (en) 2004-02-20 2009-02-17 Micron Technology, Inc. Reduced crosstalk sensor and method of formation
US7154136B2 (en) 2004-02-20 2006-12-26 Micron Technology, Inc. Isolation structures for preventing photons and carriers from reaching active areas and methods of formation
US7486705B2 (en) 2004-03-31 2009-02-03 Imra America, Inc. Femtosecond laser processing system with process parameters, controls and feedback
JP4317115B2 (ja) 2004-04-12 2009-08-19 国立大学法人東北大学 固体撮像装置、光センサおよび固体撮像装置の動作方法
US7419846B2 (en) 2004-04-13 2008-09-02 The Trustees Of Princeton University Method of fabricating an optoelectronic device having a bulk heterojunction
JP5095073B2 (ja) 2004-04-28 2012-12-12 株式会社イー・エム・ディー 半導体物質の表面改質方法、半導体装置の製造方法
JP5110239B2 (ja) 2004-05-11 2012-12-26 Ｊｓｒ株式会社 有機シリカ系膜の形成方法、膜形成用組成物
JP2005339425A (ja) 2004-05-31 2005-12-08 Sanyo Electric Co Ltd 本人認証装置
US7935941B2 (en) 2004-06-18 2011-05-03 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots spaced on-axis on non-adjacent structures
US7687740B2 (en) 2004-06-18 2010-03-30 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows
US7425471B2 (en) 2004-06-18 2008-09-16 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots spaced on-axis with cross-axis offset
US7629234B2 (en) 2004-06-18 2009-12-08 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laterally spaced laser beam spots with joint velocity profiling
US8466004B2 (en) 2004-06-24 2013-06-18 The Trustees Of Princeton University Solar cells
KR100745985B1 (ko) 2004-06-28 2007-08-06 삼성전자주식회사 이미지 센서
JP4130815B2 (ja) 2004-07-16 2008-08-06 松下電器産業株式会社 半導体受光素子及びその製造方法
JP2006033493A (ja) 2004-07-16 2006-02-02 Matsushita Electric Ind Co Ltd 撮像装置
US7880255B2 (en) 2004-07-19 2011-02-01 Micron Technology, Inc. Pixel cell having a grated interface
DE102004036220B4 (de) 2004-07-26 2009-04-02 Jürgen H. Werner Verfahren zur Laserdotierung von Festkörpern mit einem linienfokussierten Laserstrahl
CN1993807B (zh) 2004-08-06 2010-05-05 住友电气工业株式会社 形成p型半导体区域的方法及半导体元件
KR20060020400A (ko) 2004-08-31 2006-03-06 매그나칩 반도체 유한회사 광 손실을 감소시킨 시모스 이미지센서의 제조방법
KR100652379B1 (ko) 2004-09-11 2006-12-01 삼성전자주식회사 Ｃｍｏｓ 이미지 센서 및 그 제조 방법
US7235812B2 (en) 2004-09-13 2007-06-26 International Business Machines Corporation Method of creating defect free high Ge content (>25%) SiGe-on-insulator (SGOI) substrates using wafer bonding techniques
US7615808B2 (en) 2004-09-17 2009-11-10 California Institute Of Technology Structure for implementation of back-illuminated CMOS or CCD imagers
TWI244214B (en) 2004-09-23 2005-11-21 Au Optronics Corp Semiconductor device and method of fabricating a LTPS film
US7633097B2 (en) 2004-09-23 2009-12-15 Philips Lumileds Lighting Company, Llc Growth of III-nitride light emitting devices on textured substrates
DE602005023323D1 (de) 2004-09-24 2010-10-14 Harvard College Verfahren zur herstellung von detektoren auf siliziumbasis mit lasermikrostrukturierten oberflächenschichten mit elektronendonatoren
US7259413B2 (en) 2004-09-28 2007-08-21 Micron Technology, Inc. High dynamic range image sensor
CN100344001C (zh) 2004-09-30 2007-10-17 无锡尚德太阳能电力有限公司 一种制备多晶硅绒面的方法
JP4867152B2 (ja) 2004-10-20 2012-02-01 ソニー株式会社 固体撮像素子
KR101354162B1 (ko) 2004-10-20 2014-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레이저 조사방법, 레이저 조사장치, 및 반도체장치 제조방법
JP4501633B2 (ja) 2004-10-28 2010-07-14 ソニー株式会社 固体撮像素子とその製造方法
KR100682898B1 (ko) 2004-11-09 2007-02-15 삼성전자주식회사 적외선을 이용한 영상 장치 및 그의 영상 식별 방법
BRPI0517568B8 (pt) 2004-11-10 2022-03-03 Canon Kk Transistor de efeito de campo
US7645337B2 (en) 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
WO2006054758A1 (en) 2004-11-18 2006-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
CN101263078B (zh) 2004-11-24 2012-12-26 奈米系统股份有限公司 适用于纳米线薄膜的接触掺杂和退火系统以及工艺
JP2006147991A (ja) 2004-11-24 2006-06-08 Canon Inc 固体撮像素子及びそれを有する光学機器
US8637340B2 (en) 2004-11-30 2014-01-28 Solexel, Inc. Patterning of silicon oxide layers using pulsed laser ablation
US7521326B2 (en) 2004-12-03 2009-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7446807B2 (en) 2004-12-03 2008-11-04 Micron Technology, Inc. Imager pixel with capacitance for boosting reset voltage
US20060118781A1 (en) 2004-12-03 2006-06-08 Omnivision Technologies, Inc. Image sensor and pixel having a polysilicon layer over the photodiode
US7418115B2 (en) 2004-12-07 2008-08-26 Aoptix Technologies, Inc. Iris imaging using reflection from the eye
KR100690880B1 (ko) 2004-12-16 2007-03-09 삼성전자주식회사 픽셀별 광감도가 균일한 이미지 센서 및 그 제조 방법
JP2006173381A (ja) 2004-12-16 2006-06-29 Toyota Motor Corp 光起電力素子
CN101084290B (zh) 2004-12-21 2012-07-18 日立金属株式会社 荧光材料以及其制造方法，使用荧光材料的放射线检测器，与x射线ct装置
US7342268B2 (en) 2004-12-23 2008-03-11 International Business Machines Corporation CMOS imager with Cu wiring and method of eliminating high reflectivity interfaces therefrom
TWI269355B (en) 2004-12-29 2006-12-21 Ind Tech Res Inst Quantum-dot infrared photodetector
KR100660320B1 (ko) 2004-12-30 2006-12-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그의 제조방법
JP2006190757A (ja) 2005-01-05 2006-07-20 Konica Minolta Holdings Inc 有機半導体層の形成方法および有機薄膜トランジスタの製造方法
US7551059B2 (en) 2005-01-06 2009-06-23 Goodrich Corporation Hybrid infrared detector array and CMOS readout integrated circuit with improved dynamic range
EP1841482B1 (en) 2005-01-12 2016-07-06 ResMed Limited Reinforcing member for a patient interface
US7482532B2 (en) 2005-01-19 2009-01-27 Massachusetts Institute Of Technology Light trapping in thin film solar cells using textured photonic crystal
US7256112B2 (en) 2005-01-20 2007-08-14 Chartered Semiconductor Manufacturing, Ltd Laser activation of implanted contact plug for memory bitline fabrication
JP2006210701A (ja) 2005-01-28 2006-08-10 Sanyo Electric Co Ltd 固体撮像装置及びその製造方法
US7378635B2 (en) 2005-02-11 2008-05-27 Micron Technology, Inc. Method and apparatus for dark current and hot pixel reduction in active pixel image sensors
US20060180885A1 (en) 2005-02-14 2006-08-17 Omnivision Technologies, Inc. Image sensor using deep trench isolation
JP4839632B2 (ja) 2005-02-25 2011-12-21 ソニー株式会社 撮像装置
US7202543B2 (en) 2005-03-07 2007-04-10 Micron Technology, Inc. Method and structure to reduce optical crosstalk in a solid state imager
US7611060B2 (en) 2005-03-11 2009-11-03 Hand Held Products, Inc. System and method to automatically focus an image reader
WO2006101943A2 (en) 2005-03-16 2006-09-28 Lc Technologies, Inc. System and method for eyeball surface topography as a biometric discriminator
JP4826111B2 (ja) 2005-03-17 2011-11-30 ソニー株式会社 固体撮像素子および固体撮像素子の製造方法および画像撮影装置
US7642205B2 (en) 2005-04-08 2010-01-05 Mattson Technology, Inc. Rapid thermal processing using energy transfer layers
FR2884351A1 (fr) 2005-04-11 2006-10-13 St Microelectronics Sa Procede de fabrication d'un circuit integre comprenant une photodiode et circuit integre correspondant.
US7619670B2 (en) 2005-04-26 2009-11-17 Micron Technology Inc. Rolling shutter for prevention of blooming
DE112005003362T5 (de) 2005-05-11 2008-02-14 Mitsubishi Denki K.K. Solarbatterie und Herstellungsverfahren für diese
US7375378B2 (en) 2005-05-12 2008-05-20 General Electric Company Surface passivated photovoltaic devices
EP1882275A1 (en) 2005-05-17 2008-01-30 Interuniversitair Microelektronica Centrum Vzw Method for the production of photovoltaic cells
US7291539B2 (en) 2005-06-01 2007-11-06 International Business Machines Corporation Amorphization/templated recrystallization method for hybrid orientation substrates
EP1896805A4 (en) 2005-06-14 2010-03-31 Steven M Ebstein USES OF LASER-TREATED SUBSTRATE FOR MOLECULAR DIAGNOSIS
US7317579B2 (en) 2005-08-11 2008-01-08 Micron Technology, Inc. Method and apparatus providing graded-index microlenses
US7605397B2 (en) 2005-08-17 2009-10-20 Digirad Corporation Capacitive bypass
US7315014B2 (en) 2005-08-30 2008-01-01 Micron Technology, Inc. Image sensors with optical trench
JP5110519B2 (ja) 2005-08-30 2012-12-26 国立大学法人静岡大学 半導体測距素子及び固体撮像装置
US7432148B2 (en) 2005-08-31 2008-10-07 Micron Technology, Inc. Shallow trench isolation by atomic-level silicon reconstruction
KR100806577B1 (ko) 2005-09-07 2008-02-28 엘지전자 주식회사 생체 신호 측정 장치 및 방법
US20070052050A1 (en) 2005-09-07 2007-03-08 Bart Dierickx Backside thinned image sensor with integrated lens stack
US20080173620A1 (en) 2005-09-26 2008-07-24 Ultratech, Inc. Apparatuses and methods for irradiating a substrate to avoid substrate edge damage
US7666766B2 (en) 2005-09-27 2010-02-23 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus, method for forming film, and method for manufacturing photoelectric conversion device
US7608823B2 (en) 2005-10-03 2009-10-27 Teledyne Scientific & Imaging, Llc Multimode focal plane array with electrically isolated commons for independent sub-array biasing
US8350209B2 (en) * 2005-10-10 2013-01-08 X-Fab Semiconductor Foundries Ag Production of self-organized pin-type nanostructures, and the rather extensive applications thereof
JP2007122237A (ja) 2005-10-26 2007-05-17 Mitsubishi Electric Corp 偽造判定用撮像装置及び個人識別装置
WO2007056753A2 (en) 2005-11-08 2007-05-18 General Atomics Apparatus and methods for use in flash detection
JP4708965B2 (ja) 2005-11-10 2011-06-22 キヤノン株式会社 撮像装置
US20070115554A1 (en) 2005-11-22 2007-05-24 Breitung Eric M Antireflective surfaces, methods of manufacture thereof and articles comprising the same
US8816191B2 (en) * 2005-11-29 2014-08-26 Banpil Photonics, Inc. High efficiency photovoltaic cells and manufacturing thereof
US11211510B2 (en) 2005-12-13 2021-12-28 The Boeing Company Multijunction solar cell with bonded transparent conductive interlayer
KR100761829B1 (ko) 2005-12-15 2007-09-28 삼성전자주식회사 반도체 소자, 시모스 이미지 센서, 반도체 소자의 제조방법및 시모스 이미지 센서의 제조방법
US7456452B2 (en) 2005-12-15 2008-11-25 Micron Technology, Inc. Light sensor having undulating features for CMOS imager
US7576404B2 (en) 2005-12-16 2009-08-18 Icemos Technology Ltd. Backlit photodiode and method of manufacturing a backlit photodiode
US8753990B2 (en) 2005-12-21 2014-06-17 University Of Virginia Patent Foundation Systems and methods of laser texturing and crystallization of material surfaces
CN102420271B (zh) 2005-12-21 2016-07-06 太阳能公司 背面触点太阳能电池及制造方法
JP2007180643A (ja) 2005-12-27 2007-07-12 Sony Corp スイッチ装置、信号伝送回路装置及びスイッチング方法
JP2007180642A (ja) 2005-12-27 2007-07-12 Swcc Showa Device Technology Co Ltd 高精細画像シリアルデータ伝送装置
KR100741931B1 (ko) 2005-12-28 2007-07-23 동부일렉트로닉스 주식회사 이미지 센서 및 그의 제조방법
KR101181820B1 (ko) 2005-12-29 2012-09-11 삼성에스디아이 주식회사 태양 전지의 제조 방법
KR100809323B1 (ko) 2006-01-31 2008-03-05 삼성전자주식회사 크로스토크가 감소하고 감도가 증가한 이미지 센서
JP2008181468A (ja) 2006-02-13 2008-08-07 Smart Wireless Kk 赤外線顔認証装置、これを備える携帯端末器およびセキュリティ装置
KR20070081773A (ko) 2006-02-13 2007-08-17 스마트 와이어레스 가부시키가이샤 적외선 얼굴 인증장치, 이를 구비하는 휴대 단말기 및보안장치
USRE44604E1 (en) 2006-02-13 2013-11-19 Max-Viz, Inc. System for and method of synchronous acquisition of pulsed source light in performance of monitoring aircraft flight operation
US7804148B2 (en) 2006-02-16 2010-09-28 International Business Machines Corporation Opto-thermal mask including aligned thermal dissipative layer, reflective layer and transparent capping layer
US7621640B2 (en) 2006-02-17 2009-11-24 Beverly Lloyd Optical device for producing a virtual image
JP5092251B2 (ja) 2006-02-22 2012-12-05 住友電気工業株式会社 光検出装置
JP4992446B2 (ja) 2006-02-24 2012-08-08 ソニー株式会社 固体撮像装置及びその製造方法、並びにカメラ
US20070201859A1 (en) 2006-02-24 2007-08-30 Logitech Europe S.A. Method and system for use of 3D sensors in an image capture device
US7623165B2 (en) 2006-02-28 2009-11-24 Aptina Imaging Corporation Vertical tri-color sensor
US7648851B2 (en) 2006-03-06 2010-01-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating backside illuminated image sensor
WO2007102248A1 (ja) 2006-03-08 2007-09-13 Sharp Kabushiki Kaisha 半導体装置及びその製造方法
US7605440B2 (en) 2006-04-07 2009-10-20 Aptina Imaging Corporation Pixel cell isolation of charge storage and floating diffusion regions using doped wells
JP4965151B2 (ja) 2006-04-11 2012-07-04 ルネサスエレクトロニクス株式会社 固体撮像装置
JP2007287860A (ja) 2006-04-14 2007-11-01 Toshiba Corp 半導体装置の製造方法
US7777166B2 (en) 2006-04-21 2010-08-17 Cree, Inc. Solid state luminaires for general illumination including closed loop feedback control
JP4308220B2 (ja) 2006-04-24 2009-08-05 富士通株式会社 個人認識装置
JP4193870B2 (ja) 2006-05-09 2008-12-10 ソニー株式会社 固体撮像素子、撮像装置
US20100171948A1 (en) 2006-06-14 2010-07-08 President And Fellows Of Harvard College Metalized semiconductor substrates for raman spectroscopy
WO2008002405A2 (en) 2006-06-16 2008-01-03 Medtor Llc System and method for a non-invasive medical sensor
US7714368B2 (en) 2006-06-26 2010-05-11 Aptina Imaging Corporation Method and apparatus providing imager pixel array with grating structure and imager device containing the same
US8013919B2 (en) 2006-06-27 2011-09-06 Samsung Electronics Co., Ltd. CMOS image sensor with increased dynamic range based on multiple exposure periods of varying lengths
US20080000522A1 (en) 2006-06-30 2008-01-03 General Electric Company Photovoltaic device which includes all-back-contact configuration; and related processes
US7656024B2 (en) 2006-06-30 2010-02-02 Fairchild Semiconductor Corporation Chip module for complete power train
JP2008021875A (ja) 2006-07-13 2008-01-31 Toshiba Corp 固体撮像装置
US8355545B2 (en) 2007-04-10 2013-01-15 Lumidigm, Inc. Biometric detection using spatial, temporal, and/or spectral techniques
US8034724B2 (en) 2006-07-21 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7592593B2 (en) 2006-07-26 2009-09-22 Northrop Grumman Corporation Multi-band focal plane array
DE102006034786B4 (de) 2006-07-27 2011-01-20 Siltronic Ag Monokristalline Halbleiterscheibe mit defektreduzierten Bereichen und Verfahren zur Ausheilung GOI-relevanter Defekte in einer monokristallinen Halbleiterscheibe
KR20080014301A (ko) 2006-08-10 2008-02-14 삼성전자주식회사 딥트렌치 소자분리막을 포함하는 이면 조사형 ｃｍｏｓ이미지 센서 및 그 제조방법
KR100745991B1 (ko) 2006-08-11 2007-08-06 삼성전자주식회사 이미지 센서 및 그 제조 방법
WO2008025057A1 (en) 2006-08-31 2008-03-06 Newsouth Innovations Pty Limited Thin-film diode structure using a sacrificial doped dielectric layer
US20080057612A1 (en) * 2006-09-01 2008-03-06 Doan Hung Q Method for adding an implant at the shallow trench isolation corner in a semiconductor substrate
US8121356B2 (en) 2006-09-15 2012-02-21 Identix Incorporated Long distance multimodal biometric system and method
US20090038669A1 (en) 2006-09-20 2009-02-12 Translucent Photonics, Inc. Thin Film Solar Cell III
FR2906405B1 (fr) 2006-09-22 2008-12-19 Commissariat Energie Atomique Procede de realisation de regions dopees dans un substrat et de cellule photovoltaique
US8084684B2 (en) * 2006-10-09 2011-12-27 Solexel, Inc. Three-dimensional thin-film solar cells
JP4973115B2 (ja) 2006-10-16 2012-07-11 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および撮像装置
US7629582B2 (en) 2006-10-24 2009-12-08 Raytheon Company Dual band imager with visible or SWIR detectors combined with uncooled LWIR detectors
US7888159B2 (en) 2006-10-26 2011-02-15 Omnivision Technologies, Inc. Image sensor having curved micro-mirrors over the sensing photodiode and method for fabricating
US20080178932A1 (en) 2006-11-02 2008-07-31 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
US7651880B2 (en) 2006-11-04 2010-01-26 Sharp Laboratories Of America, Inc. Ge short wavelength infrared imager
DE102007012115A1 (de) 2006-11-30 2008-06-05 Osram Opto Semiconductors Gmbh Strahlungsdetektor
EP2108060A1 (en) 2006-12-11 2009-10-14 Lumenz, LLC Zinc oxide multi-junction photovoltaic cells and optoelectronic devices
US7763913B2 (en) 2006-12-12 2010-07-27 Aptina Imaging Corporation Imaging method, apparatus, and system providing improved imager quantum efficiency
JP5147226B2 (ja) 2006-12-15 2013-02-20 株式会社日立製作所 固体撮像素子、光検出器及びこれを用いた認証装置
JP2008160730A (ja) 2006-12-26 2008-07-10 Nikon Corp 信号ムラを修正する画像処理装置、較正方法、撮像装置、画像処理プログラム、および画像処理方法
JP4609428B2 (ja) 2006-12-27 2011-01-12 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および撮像装置
KR101364997B1 (ko) 2007-01-11 2014-02-19 삼성디스플레이 주식회사 백라이트 어셈블리 및 이를 구비한 표시 장치
US7582515B2 (en) 2007-01-18 2009-09-01 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US7808538B2 (en) 2007-01-22 2010-10-05 Omnivision Technologies, Inc. Image sensors with blooming reduction mechanisms
JP2008181970A (ja) 2007-01-23 2008-08-07 Sharp Corp アライメントマーク形成方法、アライメント方法、半導体装置の製造方法および固体撮像装置の製造方法
US20080179762A1 (en) 2007-01-25 2008-07-31 Au Optronics Corporation Layered structure with laser-induced aggregation silicon nano-dots in a silicon-rich dielectric layer, and applications of the same
JP4749351B2 (ja) 2007-01-30 2011-08-17 富士通株式会社 赤外線検出器
US7633629B2 (en) 2007-02-05 2009-12-15 Palo Alto Research Center Incorporated Tuning optical cavities
JP4243870B2 (ja) 2007-02-08 2009-03-25 ソニー株式会社 固体撮像装置及び撮像装置
US7803647B2 (en) 2007-02-08 2010-09-28 Taiwan Semiconductor Manufacturing Company, Ltd. Optical transmission improvement on multi-dielectric structure in advance CMOS imager
US8289430B2 (en) 2007-02-09 2012-10-16 Gentex Corporation High dynamic range imaging device
US20080191310A1 (en) 2007-02-12 2008-08-14 Weng-Jin Wu By-product removal for wafer bonding process
US20080198251A1 (en) 2007-02-15 2008-08-21 Micron Technology, Inc. Method, apparatus, and system providing multiple pixel integration periods
WO2008103293A1 (en) 2007-02-16 2008-08-28 Nanogram Corporation Solar cell structures, photovoltaic modules and corresponding processes
EP2133924A4 (en) 2007-02-16 2011-04-27 Mitsubishi Heavy Ind Ltd PHOTOELECTRIC CONVERTER AND MANUFACTURING METHOD THEREFOR
KR100825808B1 (ko) 2007-02-26 2008-04-29 삼성전자주식회사 후면 조명 구조의 이미지 센서 및 그 이미지 센서 제조방법
US7498650B2 (en) 2007-03-08 2009-03-03 Teledyne Licensing, Llc Backside illuminated CMOS image sensor with pinned photodiode
US20100143744A1 (en) 2007-03-09 2010-06-10 University Of Virginia Patent Foundation Systems and Methods of Laser Texturing of Material Surfaces and their Applications
US7468649B2 (en) 2007-03-14 2008-12-23 Flextronics International Usa, Inc. Isolated power converter
US8259293B2 (en) 2007-03-15 2012-09-04 Johns Hopkins University Deep submicron and nano CMOS single photon photodetector pixel with event based circuits for readout data-rate reduction communication system
US20080223436A1 (en) 2007-03-15 2008-09-18 Guardian Industries Corp. Back reflector for use in photovoltaic device
WO2008115814A2 (en) 2007-03-16 2008-09-25 Bp Corporation North America Inc. Solar cells
JP5268395B2 (ja) 2007-03-26 2013-08-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7728274B2 (en) 2007-03-30 2010-06-01 Subrahmanyam Pilla Imaging system with negative electron affinity photocathode
WO2008124154A2 (en) 2007-04-09 2008-10-16 Amberwave Systems Corporation Photovoltaics on silicon
US20080251812A1 (en) 2007-04-16 2008-10-16 Woo Sik Yoo Heteroepitaxial Crystal Quality Improvement
CN102017147B (zh) 2007-04-18 2014-01-29 因维萨热技术公司 用于光电装置的材料、系统和方法
KR20080097709A (ko) 2007-05-03 2008-11-06 동부일렉트로닉스 주식회사 이미지 센서 및 그의 제조방법
TWI426602B (zh) 2007-05-07 2014-02-11 Sony Corp A solid-state image pickup apparatus, a manufacturing method thereof, and an image pickup apparatus
JP5163935B2 (ja) 2007-05-17 2013-03-13 ソニー株式会社 イメージセンサ
JP4325703B2 (ja) 2007-05-24 2009-09-02 ソニー株式会社 固体撮像装置、固体撮像装置の信号処理装置および信号処理方法、ならびに撮像装置
DE102007024478A1 (de) 2007-05-25 2008-11-27 Friedrich-Schiller-Universität Jena Fotoempfindliches Halbleiterbauelement
TW200849462A (en) 2007-06-11 2008-12-16 Taiwan Semiconductor Mfg Isolation structure for image sensor device
US20080309913A1 (en) 2007-06-14 2008-12-18 James John Fallon Systems and methods for laser radar imaging for the blind and visually impaired
US7825966B2 (en) 2007-06-29 2010-11-02 Omnivision Technologies, Inc. High dynamic range sensor with blooming drain
KR100870821B1 (ko) 2007-06-29 2008-11-27 매그나칩 반도체 유한회사 후면 조사 이미지 센서
US8013238B2 (en) 2007-07-09 2011-09-06 Energy Related Devices, Inc. Micro concentrators elastically coupled with spherical photovoltaic cells
JP4304638B2 (ja) 2007-07-13 2009-07-29 オムロン株式会社 Ｃｉｓ系太陽電池及びその製造方法
JP4910923B2 (ja) 2007-07-20 2012-04-04 ソニー株式会社 撮像装置、撮像方法及び撮像プログラム
US8194232B2 (en) 2007-07-24 2012-06-05 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, position control method and position control system, and device manufacturing method
JP4379500B2 (ja) 2007-07-30 2009-12-09 ソニー株式会社 生体撮像装置
JPWO2009016846A1 (ja) 2007-08-02 2010-10-14 パナソニック株式会社 虹彩認証装置および虹彩認証システム
US20090039397A1 (en) 2007-08-09 2009-02-12 Micromedia Technology Corp. Image sensor structure
WO2009022270A2 (en) 2007-08-10 2009-02-19 Koninklijke Philips Electronics N.V. Motion detection in medical systems
JP2009055479A (ja) 2007-08-28 2009-03-12 Panasonic Corp イメージセンサ及び電磁波イメージング装置
US20090056797A1 (en) 2007-08-28 2009-03-05 Blue Square Energy Incorporated Photovoltaic Thin-Film Solar Cell and Method Of Making The Same
US8143514B2 (en) 2007-09-11 2012-03-27 Silicon China (Hk) Limited Method and structure for hydrogenation of silicon substrates with shaped covers
US20090078316A1 (en) 2007-09-24 2009-03-26 Qualcomm Incorporated Interferometric photovoltaic cell
JP5151375B2 (ja) 2007-10-03 2013-02-27 ソニー株式会社 固体撮像装置およびその製造方法および撮像装置
US8446470B2 (en) 2007-10-04 2013-05-21 Magna Electronics, Inc. Combined RGB and IR imaging sensor
US8269181B2 (en) 2007-10-10 2012-09-18 Positron Corporation Avalanche pixel sensors and related methods
US8035343B2 (en) 2007-10-15 2011-10-11 Black & Decker Inc. Method for balancing cells in a battery pack
US20090109305A1 (en) 2007-10-31 2009-04-30 Tiejun Dai One-step black level calibration for image sensors
US20090114630A1 (en) 2007-11-05 2009-05-07 Hawryluk Andrew M Minimization of surface reflectivity variations
CN101889348B (zh) 2007-11-19 2013-03-27 应用材料公司 使用图案化蚀刻剂物质以形成太阳能电池接点的工艺
JP5286046B2 (ja) 2007-11-30 2013-09-11 株式会社半導体エネルギー研究所 光電変換装置の製造方法
JP5248995B2 (ja) 2007-11-30 2013-07-31 株式会社半導体エネルギー研究所 光電変換装置の製造方法
TWI390008B (zh) 2007-12-12 2013-03-21 Solar cells and their light-emitting conversion layer
CN101465361A (zh) 2007-12-18 2009-06-24 台湾积体电路制造股份有限公司 图像传感器元件的隔离结构
JP5167799B2 (ja) 2007-12-18 2013-03-21 ソニー株式会社 固体撮像装置およびカメラ
US8981200B2 (en) 2007-12-19 2015-03-17 Tel Solar Ag Method for obtaining high performance thin film devices deposited on highly textured substrates
US7880168B2 (en) 2007-12-19 2011-02-01 Aptina Imaging Corporation Method and apparatus providing light traps for optical crosstalk reduction
US20090242019A1 (en) 2007-12-19 2009-10-01 Silexos, Inc Method to create high efficiency, low cost polysilicon or microcrystalline solar cell on flexible substrates using multilayer high speed inkjet printing and, rapid annealing and light trapping
DE102008026839A1 (de) * 2007-12-20 2009-07-02 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements in Dünnschichttechnik
US7897942B1 (en) 2007-12-20 2011-03-01 Kla-Tencor Corporation Dynamic tracking of wafer motion and distortion during lithography
US20090162966A1 (en) 2007-12-21 2009-06-25 The Woodside Group Pte Ltd Structure and method of formation of a solar cell
KR101387715B1 (ko) 2008-01-10 2014-04-22 엘지전자 주식회사 나노 텍스쳐링 구조를 갖는 반도체 웨이퍼 기판을 포함하는벌크형 태양전지의 제조방법
EP2398055B1 (en) 2008-01-10 2012-12-12 Stmicroelectronics Sa Pixel circuit for global electronic shutter
US8743247B2 (en) 2008-01-14 2014-06-03 International Business Machines Corporation Low lag transfer gate device
FR2926748B1 (fr) * 2008-01-25 2010-04-02 Commissariat Energie Atomique Objet muni d'un element graphique reporte sur un support et procede de realisation d'un tel objet.
EP2240955B1 (en) 2008-01-31 2013-08-14 President and Fellows of Harvard College Engineering flat surfaces on materials doped via pulsed laser irradiation
US7982177B2 (en) 2008-01-31 2011-07-19 Omnivision Technologies, Inc. Frontside illuminated image sensor comprising a complex-shaped reflector
US8895839B2 (en) 2008-02-01 2014-11-25 President And Fellows Of Harvard College Multijunction photovoltaic device
US8063465B2 (en) 2008-02-08 2011-11-22 Omnivision Technologies, Inc. Backside illuminated imaging sensor with vertical pixel sensor
US7741666B2 (en) 2008-02-08 2010-06-22 Omnivision Technologies, Inc. Backside illuminated imaging sensor with backside P+ doped layer
US20090200631A1 (en) 2008-02-08 2009-08-13 Omnivision Technologies, Inc. Backside illuminated imaging sensor with light attenuating layer
US7800192B2 (en) 2008-02-08 2010-09-21 Omnivision Technologies, Inc. Backside illuminated image sensor having deep light reflective trenches
US7989859B2 (en) 2008-02-08 2011-08-02 Omnivision Technologies, Inc. Backside illuminated imaging sensor with silicide light reflecting layer
US8183510B2 (en) 2008-02-12 2012-05-22 Omnivision Technologies, Inc. Image sensor with buried self aligned focusing element
KR101028085B1 (ko) 2008-02-19 2011-04-08 엘지전자 주식회사 비대칭 웨이퍼의 식각방법, 비대칭 식각의 웨이퍼를포함하는 태양전지, 및 태양전지의 제조방법
US20090211627A1 (en) 2008-02-25 2009-08-27 Suniva, Inc. Solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation
US7816220B2 (en) 2008-02-27 2010-10-19 President & Fellows Of Harvard College Laser-induced structuring of substrate surfaces
JP2009206356A (ja) 2008-02-28 2009-09-10 Toshiba Corp 固体撮像装置およびその製造方法
US8058615B2 (en) 2008-02-29 2011-11-15 Sionyx, Inc. Wide spectral range hybrid image detector
US20090227061A1 (en) 2008-03-05 2009-09-10 Nicholas Bateman Establishing a high phosphorus concentration in solar cells
US7893464B2 (en) 2008-03-28 2011-02-22 Jds Uniphase Corporation Semiconductor photodiode and method of manufacture thereof
EP2105972A3 (en) 2008-03-28 2015-06-10 Semiconductor Energy Laboratory Co, Ltd. Photoelectric conversion device and method for manufacturing the same
JP4968151B2 (ja) 2008-04-07 2012-07-04 コニカミノルタホールディングス株式会社 光センサ
EP2109143B1 (en) * 2008-04-09 2013-05-29 Sony Corporation Solid-state imaging device, production method thereof, and electronic device
US20090256156A1 (en) 2008-04-09 2009-10-15 E-Phocus, Inc Hybrid imaging sensor with approximately equal potential photodiodes
US8077240B2 (en) 2008-04-23 2011-12-13 Inernational Business Machines Corporation Methods for enhancing quality of pixel sensor image frames for global shutter imaging
JP4697258B2 (ja) 2008-05-09 2011-06-08 ソニー株式会社 固体撮像装置と電子機器
US7964499B2 (en) * 2008-05-13 2011-06-21 Samsung Electronics Co., Ltd. Methods of forming semiconductor solar cells having front surface electrodes
US7759755B2 (en) 2008-05-14 2010-07-20 International Business Machines Corporation Anti-reflection structures for CMOS image sensors
EP2302705B1 (en) 2008-06-02 2018-03-14 LG Innotek Co., Ltd. Supporting substrate for fabrication of semiconductor light emitting device and semiconductor light emitting device using the same
JP2009290161A (ja) 2008-06-02 2009-12-10 Mitsubishi Electric Corp 光半導体装置
DE102008002270A1 (de) 2008-06-06 2009-12-17 Robert Bosch Gmbh Multispektraler Sensor
JP5520290B2 (ja) 2008-06-11 2014-06-11 インテバック・インコーポレイテッド 半導体装置及び太陽電池製造方法
US7851698B2 (en) 2008-06-12 2010-12-14 Sunpower Corporation Trench process and structure for backside contact solar cells with polysilicon doped regions
US8207444B2 (en) 2008-07-01 2012-06-26 Sunpower Corporation Front contact solar cell with formed electrically conducting layers on the front side and backside
US20100074396A1 (en) 2008-07-07 2010-03-25 Siemens Medical Solutions Usa, Inc. Medical imaging with black silicon photodetector
US20100013036A1 (en) 2008-07-16 2010-01-21 Carey James E Thin Sacrificial Masking Films for Protecting Semiconductors From Pulsed Laser Process
US8159328B2 (en) 2008-07-16 2012-04-17 George William Luckhardt Biometric authentication and verification
US20100013039A1 (en) 2008-07-21 2010-01-21 Omnivision Technologies, Inc. Backside-illuminated imaging sensor including backside passivation
KR20100013649A (ko) 2008-07-31 2010-02-10 삼성전자주식회사 광전소자 및 이의 제조 방법
JP4875033B2 (ja) 2008-08-14 2012-02-15 株式会社東芝 光デバイス
WO2010019161A1 (en) 2008-08-15 2010-02-18 Sionyx, Inc. Wideband semiconducting light detector
CN101656273B (zh) 2008-08-18 2011-07-13 中芯国际集成电路制造(上海)有限公司 选择性发射极太阳能电池单元及其制造方法
US20100044552A1 (en) 2008-08-19 2010-02-25 Lockheed Martin Corporation Automatic simultaneous dual gain readout integrated circuit using threshold voltage shifts of mosfet bulk to source potential
KR101010286B1 (ko) 2008-08-29 2011-01-24 엘지전자 주식회사 태양 전지의 제조 방법
US20100051809A1 (en) 2008-09-02 2010-03-04 Princeton Lightwave, Inc. Monolithic Dual Band Imager
US7915154B2 (en) 2008-09-03 2011-03-29 Piwczyk Bernhard P Laser diffusion fabrication of solar cells
WO2010028177A1 (en) 2008-09-03 2010-03-11 Sionyx, Inc. High sensitivity photodetectors, imaging arrays, and high efficiency photovoltaic devices produced using ion implantation and femtosecond laser irradiation
FR2935839B1 (fr) * 2008-09-05 2011-08-05 Commissariat Energie Atomique Capteur d'images cmos a reflexion lumineuse
US20100059385A1 (en) 2008-09-06 2010-03-11 Delin Li Methods for fabricating thin film solar cells
WO2010033127A1 (en) 2008-09-22 2010-03-25 Sionyx, Inc. Response-enhanced monolithic-hybrid pixel
US7968834B2 (en) 2008-09-22 2011-06-28 Sionyx, Inc. Response-enhanced monolithic-hybrid pixel
US8101856B2 (en) 2008-10-02 2012-01-24 International Business Machines Corporation Quantum well GaP/Si tandem photovoltaic cells
US7875948B2 (en) 2008-10-21 2011-01-25 Jaroslav Hynecek Backside illuminated image sensor
US7915652B2 (en) 2008-10-24 2011-03-29 Sharp Laboratories Of America, Inc. Integrated infrared and color CMOS imager sensor
EP2180513A1 (en) 2008-10-27 2010-04-28 Stmicroelectronics SA Near infrared/color image sensor
CN101404307A (zh) 2008-10-29 2009-04-08 中山大学 一种多晶硅太阳电池绒面制作方法
JP4862878B2 (ja) 2008-10-30 2012-01-25 ソニー株式会社 固体撮像装置、その製造方法および撮像装置
FR2938120B1 (fr) * 2008-10-31 2011-04-08 Commissariat Energie Atomique Procede de formation d'une couche monocristalline dans le domaine micro-electronique
US20100109060A1 (en) 2008-11-06 2010-05-06 Omnivision Technologies Inc. Image sensor with backside photodiode implant
CN101423942B (zh) 2008-11-13 2012-09-05 蒋冬 一种制备单晶硅绒面的碱腐蚀溶液及方法
US8125042B2 (en) 2008-11-13 2012-02-28 Samsung Electronics Co., Ltd. Semiconductor package and method of manufacturing the same
US8400537B2 (en) 2008-11-13 2013-03-19 Omnivision Technologies, Inc. Image sensors having gratings for color separation
JP5353201B2 (ja) 2008-11-21 2013-11-27 ソニー株式会社 固体撮像装置の製造方法
KR20100057983A (ko) 2008-11-24 2010-06-03 한국전자통신연구원 생체 인식 시스템의 다중 영상 획득 장치
US8487351B2 (en) 2008-11-28 2013-07-16 Samsung Electronics Co., Ltd. Image sensor and image sensing system including the same
US8093559B1 (en) 2008-12-02 2012-01-10 Hrl Laboratories, Llc Methods and apparatus for three-color infrared sensors
KR20100064699A (ko) 2008-12-05 2010-06-15 삼성전자주식회사 후면 조명 구조의 이미지 센서
US20100140768A1 (en) 2008-12-10 2010-06-10 Zafiropoulo Arthur W Systems and processes for forming three-dimensional circuits
US20100147383A1 (en) 2008-12-17 2010-06-17 Carey James E Method and apparatus for laser-processing a semiconductor photovoltaic apparatus
US8124993B2 (en) 2008-12-17 2012-02-28 Palo Alto Research Center Incorporated Selective decomposition of nitride semiconductors to enhance LED light extraction
CN101478013A (zh) 2008-12-30 2009-07-08 无锡尚德太阳能电力有限公司 一种反应离子刻蚀制备太阳电池硅片绒面的方法以及用该方法制造的太阳电池
US8048250B2 (en) * 2009-01-16 2011-11-01 Genie Lens Technologies, Llc Method of manufacturing photovoltaic (PV) enhancement films
US7745901B1 (en) 2009-01-29 2010-06-29 Sionyx, Inc. Highly-depleted laser doped semiconductor volume
KR101776955B1 (ko) 2009-02-10 2017-09-08 소니 주식회사 고체 촬상 장치와 그 제조 방법, 및 전자 기기
JP4816768B2 (ja) 2009-06-22 2011-11-16 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
US8118226B2 (en) 2009-02-11 2012-02-21 Datalogic Scanning, Inc. High-resolution optical code imaging using a color imager
US8953149B2 (en) 2009-02-17 2015-02-10 Microsoft Corporation CMOS three-dimensional image sensor detectors having reduced inter-gate capacitance, and enhanced modulation contrast
CN102369724B (zh) 2009-02-18 2016-05-04 谷歌公司 自动捕获信息，例如使用文档感知设备捕获信息
JP5185208B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 フォトダイオード及びフォトダイオードアレイ
JP5185205B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 半導体光検出素子
JP5185207B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 フォトダイオードアレイ
JP5185206B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 半導体光検出素子
JP5185157B2 (ja) 2009-02-25 2013-04-17 浜松ホトニクス株式会社 フォトダイオードの製造方法及びフォトダイオード
US20100224229A1 (en) 2009-03-09 2010-09-09 Pralle Martin U Multi-junction semiconductor photovoltaic apparatus and methods
US7964431B2 (en) 2009-03-19 2011-06-21 Twin Creeks Technologies, Inc. Method to make electrical contact to a bonded face of a photovoltaic cell
EP2234387B8 (en) 2009-03-24 2012-05-23 Sony Corporation Solid-state imaging device, driving method of solid-state imaging device, and electronic apparatus
US8604405B2 (en) 2009-03-31 2013-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Backside illuminated image sensor device with refractive index dependent layer thicknesses and method of forming the same
WO2010121309A1 (en) 2009-04-21 2010-10-28 Petar Branko Atanackovic Optoelectronic device with lateral pin or pin junction
US8207051B2 (en) 2009-04-28 2012-06-26 Sionyx, Inc. Semiconductor surface modification
KR101160112B1 (ko) 2009-04-29 2012-06-26 주식회사 효성 함몰전극형 태양전지의 제조방법
US20100300505A1 (en) 2009-05-26 2010-12-02 Chen Yung T Multiple junction photovolatic devices and process for making the same
US20100300507A1 (en) 2009-06-02 2010-12-02 Sierra Solar Power, Inc. High efficiency low cost crystalline-si thin film solar module
KR100984700B1 (ko) 2009-06-04 2010-10-01 엘지전자 주식회사 태양 전지 및 그 제조 방법
US8076746B2 (en) 2009-06-26 2011-12-13 Omnivision Technologies, Inc. Back-illuminated image sensors having both frontside and backside photodetectors
US8111724B2 (en) * 2009-07-07 2012-02-07 International Business Machines Corporation Temperature control device for optoelectronic devices
CN101634026A (zh) 2009-08-26 2010-01-27 北京市太阳能研究所有限公司 一种制备单晶硅绒面的腐蚀液及方法
CN101634027A (zh) 2009-08-26 2010-01-27 北京市太阳能研究所有限公司 一种制备单晶硅绒面的方法
KR101139443B1 (ko) 2009-09-04 2012-04-30 엘지전자 주식회사 이종접합 태양전지와 그 제조방법
US8906670B2 (en) 2009-09-11 2014-12-09 Pacific Bioscience Of California, Inc. Zero-mode waveguides with non-reflecting walls
EP2478560A4 (en) 2009-09-17 2014-06-18 Sionyx Inc LIGHT-SENSITIVE IMAGING DEVICES AND CORRESPONDING METHODS
US8476681B2 (en) 2009-09-17 2013-07-02 Sionyx, Inc. Photosensitive imaging devices and associated methods
EP2306520A1 (fr) 2009-09-30 2011-04-06 STMicroelectronics SA Capteur d'image face arrière
JP5538811B2 (ja) 2009-10-21 2014-07-02 キヤノン株式会社 固体撮像素子
WO2011050336A2 (en) 2009-10-22 2011-04-28 Sionyx, Inc. Semiconductor devices having an enhanced absorption region and associated methods
CN102725868A (zh) * 2009-11-30 2012-10-10 京瓷株式会社 光电转换模块及其制造方法、以及发电装置
EP2510550A4 (en) 2009-12-09 2014-12-24 Solexel Inc HIGH-EFFECT PHOTOVOLTAIC SOLAR CELL STRUCTURES WITH REAR-SIDE CONTACTS AND METHODS OF MAKING USING THREE-DIMENSIONAL SEMICONDUCTOR ABSORBERS
JP5297997B2 (ja) 2009-12-21 2013-09-25 株式会社日立メディアエレクトロニクス 個人認証装置及び移動通信端末
JP5172819B2 (ja) 2009-12-28 2013-03-27 株式会社東芝 固体撮像装置
KR20110079323A (ko) 2009-12-31 2011-07-07 주식회사 동부하이텍 이미지 센서 및 그 제조방법
US20130014814A1 (en) * 2010-01-08 2013-01-17 Massachusetts Institute Of Technology Nanostructured arrays for radiation capture structures
JP5351066B2 (ja) 2010-01-25 2013-11-27 浜松ホトニクス株式会社 Ｏｃｔ装置
WO2011097163A1 (en) 2010-02-03 2011-08-11 Battelle Memorial Institute Three-dimensional imaging system using a single lens system
CN102947953A (zh) 2010-03-24 2013-02-27 西奥尼克斯公司 具有增强的电磁辐射探测的器件和相关方法
JP5663925B2 (ja) 2010-03-31 2015-02-04 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
CN101818348A (zh) 2010-04-02 2010-09-01 浙江大学 一步法制备单晶硅太阳能电池绒面的方法
US8389377B2 (en) 2010-04-02 2013-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Sensor element isolation in a backside illuminated image sensor
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
WO2011140273A2 (en) 2010-05-04 2011-11-10 Sionyx, Inc. Photovoltaic devices and associated methods
CN201725796U (zh) 2010-06-01 2011-01-26 格科微电子（上海）有限公司 背面照光的cmos图像传感器
CN102270646A (zh) 2010-06-01 2011-12-07 格科微电子（上海）有限公司 背面照光的cmos图像传感器
CA2786760C (en) 2010-06-01 2018-01-02 Boly Media Communications (Shenzhen) Co., Ltd. Multi-spectrum photosensitive device
US8357974B2 (en) * 2010-06-30 2013-01-22 Corning Incorporated Semiconductor on glass substrate with stiffening layer and process of making the same
US20120001841A1 (en) 2010-06-30 2012-01-05 Jeff Gokingco Identifying ambient light type and illuminance compensation using a plurality of photodetectors
US8390089B2 (en) 2010-07-27 2013-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor with deep trench isolation structure
JP5726005B2 (ja) 2010-08-02 2015-05-27 アイメックＩｍｅｃ Ｃｍｏｓ撮像装置アレイの製造方法
DE102010038796B4 (de) 2010-08-02 2014-02-20 Von Ardenne Anlagentechnik Gmbh Dünnschichtsolarzelle und Verfahren zu ihrer Herstellung
WO2012027290A1 (en) 2010-08-23 2012-03-01 Red. Com, Inc. High dynamic range video
JP5218502B2 (ja) 2010-08-30 2013-06-26 ソニー株式会社 固体撮像装置の製造方法
JP2012054321A (ja) 2010-08-31 2012-03-15 Sony Corp 固体撮像素子及びその製造方法、並びに固体撮像装置及び撮像装置
US8378398B2 (en) 2010-09-30 2013-02-19 Omnivision Technologies, Inc. Photodetector isolation in image sensors
US8723094B2 (en) 2010-12-21 2014-05-13 Sionyx, Inc. Photodetecting imager devices having correlated double sampling and associated methods
JP2014500633A (ja) 2010-12-21 2014-01-09 サイオニクス、インク． 基板損傷の少ない半導体素子および関連方法
FR2969384A1 (fr) 2010-12-21 2012-06-22 St Microelectronics Sa Capteur d'image a intermodulation reduite
FR2969385A1 (fr) 2010-12-21 2012-06-22 St Microelectronics Crolles 2 Capteur d'images a taux d'intermodulation réduit
JP2012156334A (ja) 2011-01-26 2012-08-16 Sony Corp 固体撮像装置、固体撮像装置の製造方法及び電子機器
KR20120092326A (ko) 2011-02-11 2012-08-21 서울옵토디바이스주식회사 광 결정 구조를 갖는 비극성 발광 다이오드 및 그것을 제조하는 방법
JP2012169530A (ja) 2011-02-16 2012-09-06 Sony Corp 固体撮像装置、および、その製造方法、電子機器
JP5708025B2 (ja) 2011-02-24 2015-04-30 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
JP5810551B2 (ja) 2011-02-25 2015-11-11 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
JP6299058B2 (ja) 2011-03-02 2018-03-28 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
DE102011013076A1 (de) 2011-03-04 2012-09-06 Rolls-Royce Deutschland Ltd & Co Kg Strahltriebwerksvorrichtung mit einem Nebenstromkanal
JP2012191005A (ja) 2011-03-10 2012-10-04 Sony Corp 固体撮像素子、固体撮像素子の製造方法および撮像装置
JP2012212349A (ja) 2011-03-31 2012-11-01 Hitachi Solutions Ltd 生体認証装置
US9083905B2 (en) 2011-04-26 2015-07-14 Semiconductor Components Industries, Llc Structured light imaging system
US20120291859A1 (en) 2011-05-17 2012-11-22 Christopher Vineis Multi-Junction Semiconductor Photovoltaic Apparatus and Methods
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US20120313205A1 (en) 2011-06-10 2012-12-13 Homayoon Haddad Photosensitive Imagers Having Defined Textures for Light Trapping and Associated Methods
US9369641B2 (en) 2011-06-24 2016-06-14 Boly Media Communications (Shenzhen) Co., Ltd Multi-depth-of-field light-sensing device, and system and method for use thereof having plural light-sensing pixel layers sense light signals with different wavelength bands from different distances
CN103022062B (zh) 2011-07-19 2016-12-21 索尼公司 固体摄像器件及其制造方法和电子设备
US20130168792A1 (en) 2011-09-16 2013-07-04 Sionyx, Inc. Three Dimensional Architecture Semiconductor Devices and Associated Methods
US8865507B2 (en) 2011-09-16 2014-10-21 Sionyx, Inc. Integrated visible and infrared imager devices and associated methods
US20130168803A1 (en) 2011-09-16 2013-07-04 Sionyx, Inc. Semiconductor-On-Insulator Devices and Associated Methods
JP5794068B2 (ja) 2011-09-16 2015-10-14 ソニー株式会社 固体撮像素子および製造方法、並びに電子機器
US20140242744A1 (en) * 2011-09-26 2014-08-28 Solarity, Inc. Substrate and superstrate design and process for nano-imprinting lithography of light and carrier collection management devices
JP2013093553A (ja) 2011-10-04 2013-05-16 Canon Inc 光電変換装置及びその製造方法、並びに光電変換システム
KR101853333B1 (ko) 2011-10-21 2018-05-02 삼성전자주식회사 블랙 레벨 안정화를 위한 이미지 센서
US9593053B1 (en) 2011-11-14 2017-03-14 Hypersolar, Inc. Photoelectrosynthetically active heterostructures
JP5768684B2 (ja) 2011-11-29 2015-08-26 富士通株式会社 ステレオ画像生成装置、ステレオ画像生成方法及びステレオ画像生成用コンピュータプログラム
WO2013109157A1 (en) * 2012-01-18 2013-07-25 Wostec, Inc. Arrangements with pyramidal features having at least one nanostructured surface and methods of making and using
US9373732B2 (en) 2012-02-07 2016-06-21 Semiconductor Components Industries, Llc Image sensors with reflective optical cavity pixels
US8772898B2 (en) 2012-02-09 2014-07-08 Omnivision Technologies, Inc. Lateral light shield in backside illuminated imaging sensors
US9064764B2 (en) * 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
KR20140138886A (ko) * 2012-04-13 2014-12-04 아사히 가세이 이-매터리얼즈 가부시키가이샤 반도체 발광 소자용 광추출체 및 발광 소자
US9659981B2 (en) * 2012-04-25 2017-05-23 Taiwan Semiconductor Manufacturing Co., Ltd. Backside illuminated image sensor with negatively charged layer
US9136300B2 (en) 2013-01-11 2015-09-15 Digimarc Corporation Next generation imaging methods and systems
US9293500B2 (en) 2013-03-01 2016-03-22 Apple Inc. Exposure control for image sensors
KR20140147508A (ko) 2013-06-20 2014-12-30 삼성전자주식회사 이미지 센서
WO2014209421A1 (en) * 2013-06-29 2014-12-31 Sionyx, Inc. Shallow trench textured regions and associated methods
US9559215B1 (en) 2015-12-23 2017-01-31 Intel Corporation Method and apparatus for making p-channel thin film transistors for OLED and LED active matrix flat panel displays

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