JP4845273B2 - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法 Download PDF

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JP4845273B2
JP4845273B2 JP2001046401A JP2001046401A JP4845273B2 JP 4845273 B2 JP4845273 B2 JP 4845273B2 JP 2001046401 A JP2001046401 A JP 2001046401A JP 2001046401 A JP2001046401 A JP 2001046401A JP 4845273 B2 JP4845273 B2 JP 4845273B2
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electrode
insulating film
semiconductor layer
region
wiring
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JP2001313397A5 (enExample
JP2001313397A (ja
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舜平 山崎
潤 小山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • G—PHYSICS
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
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    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
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    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
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