CN101424847B - Tft-lcd像素结构及其制造方法 - Google Patents
Tft-lcd像素结构及其制造方法 Download PDFInfo
- Publication number
- CN101424847B CN101424847B CN 200710176465 CN200710176465A CN101424847B CN 101424847 B CN101424847 B CN 101424847B CN 200710176465 CN200710176465 CN 200710176465 CN 200710176465 A CN200710176465 A CN 200710176465A CN 101424847 B CN101424847 B CN 101424847B
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- Prior art keywords
- layer
- amorphous silicon
- tft
- light
- pixel
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title abstract description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 70
- 239000010408 film Substances 0.000 claims abstract description 44
- 239000010409 thin film Substances 0.000 claims abstract description 40
- 238000002161 passivation Methods 0.000 claims abstract description 35
- 238000000151 deposition Methods 0.000 claims abstract description 17
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 16
- 238000001039 wet etching Methods 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 34
- 229920002120 photoresistant polymer Polymers 0.000 claims description 30
- 238000009413 insulation Methods 0.000 claims description 18
- 239000012528 membrane Substances 0.000 claims description 17
- 238000005516 engineering process Methods 0.000 claims description 14
- 238000004380 ashing Methods 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 9
- 238000001259 photo etching Methods 0.000 claims description 9
- 238000004062 sedimentation Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 21
- 238000005530 etching Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 8
- 239000011733 molybdenum Substances 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 6
- 229910000809 Alumel Inorganic materials 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910001182 Mo alloy Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910001080 W alloy Inorganic materials 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200710176465 CN101424847B (zh) | 2007-10-29 | 2007-10-29 | Tft-lcd像素结构及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200710176465 CN101424847B (zh) | 2007-10-29 | 2007-10-29 | Tft-lcd像素结构及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101424847A CN101424847A (zh) | 2009-05-06 |
CN101424847B true CN101424847B (zh) | 2010-06-02 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200710176465 Active CN101424847B (zh) | 2007-10-29 | 2007-10-29 | Tft-lcd像素结构及其制造方法 |
Country Status (1)
Country | Link |
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CN (1) | CN101424847B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8471973B2 (en) * | 2009-06-12 | 2013-06-25 | Au Optronics Corporation | Pixel designs of improving the aperture ratio in an LCD |
CN103337497A (zh) * | 2013-06-28 | 2013-10-02 | 北京京东方光电科技有限公司 | 一种阵列基板及其制造方法、显示装置 |
CN106324896B (zh) * | 2016-10-27 | 2019-03-15 | 京东方科技集团股份有限公司 | 显示基板及其驱动方法和制备方法、显示面板、显示装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1205087A (zh) * | 1996-10-16 | 1999-01-13 | 精工爱普生株式会社 | 液晶装置用的基板、液晶装置和投射型显示装置 |
CN1334483A (zh) * | 2000-07-26 | 2002-02-06 | 精工爱普生株式会社 | 电光装置,电光装置用基板及投影型显示装置 |
EP1365277A3 (en) * | 2002-05-21 | 2004-12-29 | Seiko Epson Corporation | Electro-optical device and electronic apparatus |
CN101000897A (zh) * | 2000-02-22 | 2007-07-18 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
-
2007
- 2007-10-29 CN CN 200710176465 patent/CN101424847B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1205087A (zh) * | 1996-10-16 | 1999-01-13 | 精工爱普生株式会社 | 液晶装置用的基板、液晶装置和投射型显示装置 |
CN101000897A (zh) * | 2000-02-22 | 2007-07-18 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
CN1334483A (zh) * | 2000-07-26 | 2002-02-06 | 精工爱普生株式会社 | 电光装置,电光装置用基板及投影型显示装置 |
EP1365277A3 (en) * | 2002-05-21 | 2004-12-29 | Seiko Epson Corporation | Electro-optical device and electronic apparatus |
Also Published As
Publication number | Publication date |
---|---|
CN101424847A (zh) | 2009-05-06 |
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Owner name: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY Effective date: 20141128 Owner name: JINGDONGFANG SCIENCE AND TECHNOLOGY GROUP CO., LTD Free format text: FORMER OWNER: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY CO., LTD. Effective date: 20141128 |
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Free format text: CORRECT: ADDRESS; FROM: 100176 DAXING, BEIJING TO: 100015 CHAOYANG, BEIJING |
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Effective date of registration: 20141128 Address after: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee after: BOE Technology Group Co., Ltd. Patentee after: Beijing BOE Photoelectricity Science & Technology Co., Ltd. Address before: 100176 Beijing economic and Technological Development Zone, West Central Road, No. 8 Patentee before: Beijing BOE Photoelectricity Science & Technology Co., Ltd. |
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Effective date of registration: 20201130 Address after: 215200 No. 1700, Wujiang economic and Technological Development Zone, Suzhou, Jiangsu, Zhongshan North Road Patentee after: Gaochuang (Suzhou) Electronics Co.,Ltd. Patentee after: BOE TECHNOLOGY GROUP Co.,Ltd. Address before: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee before: BOE TECHNOLOGY GROUP Co.,Ltd. Patentee before: BEIJING BOE OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |
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