JPS6459215A - Thin film transistor for liquid crystal display - Google Patents

Thin film transistor for liquid crystal display

Info

Publication number
JPS6459215A
JPS6459215A JP62215404A JP21540487A JPS6459215A JP S6459215 A JPS6459215 A JP S6459215A JP 62215404 A JP62215404 A JP 62215404A JP 21540487 A JP21540487 A JP 21540487A JP S6459215 A JPS6459215 A JP S6459215A
Authority
JP
Japan
Prior art keywords
film
electrode
gate
defect
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62215404A
Other languages
Japanese (ja)
Inventor
Saburo Oikawa
Akio Mimura
Kikuo Ono
Nobutake Konishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62215404A priority Critical patent/JPS6459215A/en
Publication of JPS6459215A publication Critical patent/JPS6459215A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To prevent an image display part from having a picture element defect and deterioration in picture quality owing to a gate contact resistance defect by forming an electrode protective film of a motor layer on the surface of a gate signal line electrode. CONSTITUTION:A gate insulating film 10 is formed on a transparent insulated substrate 18, a gate electrode film 16 is formed, and then a source area 12, a drain area 13, and a channel area 11 are formed. Then a passivation film 17-1 is formed as the flank protective film for the source and drain areas 12 and 13 and gate insulating film 10. Here, an SiO2 film is formed by an atmospheric CVD method and then a normal Al-Si film is deposited as a gate signal line electrode 2, but an Al-Si base Si rich electrode protective layer 2-1 is formed continuously by sputtering on the surface layer as a protective layer. Then the insulating protective film 17 is formed and contact holes 6, 4, and 9 for the source area, drain area, and gate electrode are bored. Consequently, a defect of a screen and picture quality deterioration due to a gate signal electrode contact defect are precluded.
JP62215404A 1987-08-31 1987-08-31 Thin film transistor for liquid crystal display Pending JPS6459215A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62215404A JPS6459215A (en) 1987-08-31 1987-08-31 Thin film transistor for liquid crystal display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62215404A JPS6459215A (en) 1987-08-31 1987-08-31 Thin film transistor for liquid crystal display

Publications (1)

Publication Number Publication Date
JPS6459215A true JPS6459215A (en) 1989-03-06

Family

ID=16671764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62215404A Pending JPS6459215A (en) 1987-08-31 1987-08-31 Thin film transistor for liquid crystal display

Country Status (1)

Country Link
JP (1) JPS6459215A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1128430A2 (en) * 2000-02-22 2001-08-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP2012142571A (en) * 2011-12-26 2012-07-26 Semiconductor Energy Lab Co Ltd Semiconductor device
US9153352B2 (en) 2001-07-27 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same
US9704996B2 (en) 2000-04-12 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1128430A2 (en) * 2000-02-22 2001-08-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
EP1128430A3 (en) * 2000-02-22 2010-11-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US9318610B2 (en) 2000-02-22 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US9869907B2 (en) 2000-02-22 2018-01-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US9704996B2 (en) 2000-04-12 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9153352B2 (en) 2001-07-27 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same
US9917107B2 (en) 2001-07-27 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same
US10854636B2 (en) 2001-07-27 2020-12-01 Semiconductor Energy Laboratory Co., Ltd. Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same
JP2012142571A (en) * 2011-12-26 2012-07-26 Semiconductor Energy Lab Co Ltd Semiconductor device

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