JPS57113265A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS57113265A
JPS57113265A JP55188127A JP18812780A JPS57113265A JP S57113265 A JPS57113265 A JP S57113265A JP 55188127 A JP55188127 A JP 55188127A JP 18812780 A JP18812780 A JP 18812780A JP S57113265 A JPS57113265 A JP S57113265A
Authority
JP
Japan
Prior art keywords
alloy film
film
layer
sputtering
liquid crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55188127A
Other languages
Japanese (ja)
Inventor
Wakao Miyazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP55188127A priority Critical patent/JPS57113265A/en
Publication of JPS57113265A publication Critical patent/JPS57113265A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

Abstract

PURPOSE:To prevent defective picture display due to disconnection, and to make uniform the characteristic of reflection by sputtering Al or an Al alloy film for wiring and driving a liquid crystal in an argon gas atmosphere having 1-serveral % oxygen content and whitening the surface. CONSTITUTION:A P<+> diffusion layer 22, a field oxide film 23 and a gate oxide film 24 are formed onto a P type single crystal silicon substrate 21, and polycrystal silicon 25 is shaped. An N<+> diffusion layer 26 functioning as a source and a drain is formed, a layer insulating film 27 is shaped onto the layer 26, and a contact hole is opened. Al or the Al alloy film is molded by sputtering the whole in the argon gas into which 1-several % oxygen is mixed. Accordigly, the surface of the Al or the Al alloy film is whitened. A liquid crystal driving electrode 29 is formed together with video signal line wiring 28 through photolithography technique.
JP55188127A 1980-12-29 1980-12-29 Semiconductor device and its manufacture Pending JPS57113265A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55188127A JPS57113265A (en) 1980-12-29 1980-12-29 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55188127A JPS57113265A (en) 1980-12-29 1980-12-29 Semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPS57113265A true JPS57113265A (en) 1982-07-14

Family

ID=16218184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55188127A Pending JPS57113265A (en) 1980-12-29 1980-12-29 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS57113265A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0795774A2 (en) * 1996-03-11 1997-09-17 Canon Kabushiki Kaisha Liquid crystal device and process for production thereof
EP0896243A2 (en) * 1997-08-04 1999-02-10 Matsushita Electric Industrial Co., Ltd. Reflection type liquid crystal display apparatus
US9592839B2 (en) 2012-04-02 2017-03-14 Kawasaki Jukogyo Kabushiki Kaisha Railcar

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0795774A2 (en) * 1996-03-11 1997-09-17 Canon Kabushiki Kaisha Liquid crystal device and process for production thereof
EP0795774A3 (en) * 1996-03-11 1998-03-25 Canon Kabushiki Kaisha Liquid crystal device and process for production thereof
US6320639B1 (en) 1996-03-11 2001-11-20 Canon Kabushiki Kaisha Liquid crystal device and process for production thereof
EP0896243A2 (en) * 1997-08-04 1999-02-10 Matsushita Electric Industrial Co., Ltd. Reflection type liquid crystal display apparatus
EP0896243A3 (en) * 1997-08-04 1999-09-08 Matsushita Electric Industrial Co., Ltd. Reflection type liquid crystal display apparatus
US6011605A (en) * 1997-08-04 2000-01-04 Matsushita Electric Industrial Co., Ltd. Liquid crystal display with a metallic reflecting electrode having a two layer film of Ti and Al alloy
US9592839B2 (en) 2012-04-02 2017-03-14 Kawasaki Jukogyo Kabushiki Kaisha Railcar

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