JPS6459863A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6459863A
JPS6459863A JP21687687A JP21687687A JPS6459863A JP S6459863 A JPS6459863 A JP S6459863A JP 21687687 A JP21687687 A JP 21687687A JP 21687687 A JP21687687 A JP 21687687A JP S6459863 A JPS6459863 A JP S6459863A
Authority
JP
Japan
Prior art keywords
amorphous silicon
tft
phosphorus
liquid crystal
serving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21687687A
Other languages
Japanese (ja)
Other versions
JP2667173B2 (en
Inventor
Mitsuhiro Uno
Sadakichi Hotta
Ikunori Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62216876A priority Critical patent/JP2667173B2/en
Publication of JPS6459863A publication Critical patent/JPS6459863A/en
Application granted granted Critical
Publication of JP2667173B2 publication Critical patent/JP2667173B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Abstract

PURPOSE:To obtain a thin film transistor (TFT) driving a liquid crystal display showing good image characteristics, by specifying a film thickness of an amorphous silicon semiconductor comprising phosphorus which improves an ohmic contact between a semiconductor layer and source and drain electrodes of the TFT for constituting an image display apparatus in combination with a liquid crystal. CONSTITUTION:A gate electrode 2 comprising chrome is formed on a glass substrate 1 and silicon nitride (4000A) serving as a gate insulating film 3, amorphous silicon (4000A) serving as a semiconductor layer 4, and amorphous silicon semiconductor layers 5a and 5b comprising phosphorus are sequentially and selectively deposited by a plasma chemical vapor deposition method, and aluminum serving as source and drain electrodes 6a and 6b is selectively formed to complete a TFT. At this time, by making the film thickness of the amorphous silicon semiconductor layer comprising phosphorus 80A-440A, a sufficient ON current and an ON/OFF ratio can be obtained and a liquid crystal display showing good image characteristics can be driven.
JP62216876A 1987-08-31 1987-08-31 Semiconductor device Expired - Lifetime JP2667173B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62216876A JP2667173B2 (en) 1987-08-31 1987-08-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62216876A JP2667173B2 (en) 1987-08-31 1987-08-31 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS6459863A true JPS6459863A (en) 1989-03-07
JP2667173B2 JP2667173B2 (en) 1997-10-27

Family

ID=16695298

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62216876A Expired - Lifetime JP2667173B2 (en) 1987-08-31 1987-08-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JP2667173B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0647971A1 (en) * 1993-04-23 1995-04-12 Kabushiki Kaisha Toshiba Thin film transistor and display using the transistor
KR100237004B1 (en) * 1996-07-09 2000-01-15 구본준 Manufacturing method of thin-film transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135968A (en) * 1980-03-27 1981-10-23 Canon Inc Amorphous silicon thin film transistor and manufacture thereof
JPS62128566A (en) * 1985-11-29 1987-06-10 Seiko Instr & Electronics Ltd Manufacture of thin film transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135968A (en) * 1980-03-27 1981-10-23 Canon Inc Amorphous silicon thin film transistor and manufacture thereof
JPS62128566A (en) * 1985-11-29 1987-06-10 Seiko Instr & Electronics Ltd Manufacture of thin film transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5811846A (en) * 1993-04-03 1998-09-22 Kabushiki Kaisha Toshiba Thin-film transistor and display device using the same
EP0647971A1 (en) * 1993-04-23 1995-04-12 Kabushiki Kaisha Toshiba Thin film transistor and display using the transistor
EP0647971A4 (en) * 1993-04-23 1995-05-03
US5563432A (en) * 1993-04-23 1996-10-08 Kabushiki Kaisha Toshiba Thin-film transistor and display device using the same
KR100237004B1 (en) * 1996-07-09 2000-01-15 구본준 Manufacturing method of thin-film transistor

Also Published As

Publication number Publication date
JP2667173B2 (en) 1997-10-27

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