JP5525224B2 - 表示装置 - Google Patents
表示装置 Download PDFInfo
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- JP5525224B2 JP5525224B2 JP2009220148A JP2009220148A JP5525224B2 JP 5525224 B2 JP5525224 B2 JP 5525224B2 JP 2009220148 A JP2009220148 A JP 2009220148A JP 2009220148 A JP2009220148 A JP 2009220148A JP 5525224 B2 JP5525224 B2 JP 5525224B2
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- layer
- semiconductor layer
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- semiconductor
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Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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Description
したがって、本発明は以下に示す実施の形態及び実施例の記載内容のみに限定して解釈されるものではない。なお、図面を用いて本発明の構成を説明するにあたり、同じものを指す符号は異なる図面間でも共通して用いる。
本実施の形態では、本発明の一形態である表示装置について、ブロック図等を参照して説明する。
本実施の形態では、実施の形態1にて説明した表示装置の駆動回路の回路図等について図3乃至図6を参照して説明する。
本実施の形態においては、実施の形態1及び実施の形態2に示す表示装置において、論理回路部、スイッチ部、及び画素部の薄膜トランジスタの構造について示す。表示装置に用いる薄膜トランジスタは、p型よりもn型の方が、キャリアの移動度が高い。また、同一の基板上に形成する薄膜トランジスタを全て同じ極性に統一すると、工程数を抑えることができ、好ましい。そのため、本実施の形態では、n型の薄膜トランジスタについて説明する。
ここでは、図7に示す表示装置の作製方法について、図15乃至図18を用いて示す。
本実施の形態では、n型の薄膜トランジスタの作製方法(方法1)について説明する。
または、シリコンまたはゲルマニウムを含む堆積性気体と、水素と、ヘリウム、ネオン、クリプトン等の希ガスとを混合し、グロー放電プラズマにより形成する。シリコンまたはゲルマニウムを含む堆積性気体の流量に対して、水素の流量を10〜2000倍、好ましくは10〜200倍に希釈して、微結晶シリコン、微結晶シリコンゲルマニウム、微結晶ゲルマニウム等を形成する。
ドライエッチングの条件は、露出している第3の半導体層363〜366にダメージが入らず、且つ第3の半導体層363〜366に対するエッチングレートが低い条件を用いる。つまり、露出している第3の半導体層363〜366表面にほとんどダメージを与えず、且つ露出している第3の半導体層363〜366の厚さがほとんど減少しない条件を用いる。エッチングガスとしては、Cl2、CF4、またはN2等を用いる。また、エッチング方法については特に限定はなく、誘導結合型プラズマ(ICP:Inductively Coupled Plasma)方式、容量結合型プラズマ(CCP:Capacitively Coupled Plasma)方式、電子サイクロトン共鳴プラズマ(ECR:Electron Cyclotron Resonance)方式、反応性イオンエッチング(RIE:Reactive Ion Etching)方式等を用いることができる。
本実施の形態では、本発明の一形態である表示装置に設けられる保護回路について図面を参照して説明する。実施の形態1の図2における保護回路134〜136に用いられる保護回路の具体的な回路構成の例について、図24を参照して説明する。以下の説明ではn型トランジスタを設ける場合についてのみ説明するが、本発明はこれに限定されない。
本実施の形態では、本発明の表示装置の端子部について図25を参照して説明する。
次に、上記実施の形態にて説明した液晶表示装置及び発光表示装置に搭載する表示パネルまたは発光パネルの一形態について、図面(断面図)を参照して説明する。
本発明に係る薄膜トランジスタを有する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用のモニタ、電子ペーパー、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機等の大型ゲーム機等が挙げられる。
に示す電子書籍は、電子辞書としての機能を持たせた構成としてもよい。
に示すデジタルフォトフレームは、筐体711に表示部712が組み込まれている。表示部712は、各種画像を表示することが可能であり、例えば、デジタルカメラ等で撮影した画像データを表示させることで、通常の写真立てと同様に機能させることができる。
Claims (2)
- スイッチ部またはバッファ部と、論理回路部と、画素部と、を有し、
前記画素部は、第1のトランジスタと、前記第1のトランジスタに電気的に接続された画素電極と、容量素子と、を有し、
前記スイッチ部またはバッファ部は、第1のゲート電極と第2のゲート電極との間に第1の絶縁層、半導体層、及び第2の絶縁層を有する第2のトランジスタを有し、
前記論理回路部は、第3のトランジスタ及び第4のトランジスタと、配線と、を有し、
前記第1のトランジスタ乃至第4のトランジスタは、同じ極性であり、
前記配線は、前記第3のトランジスタのゲート電極と、前記第3のトランジスタのソース電極又はドレイン電極の一方と、前記第4のトランジスタのソース電極又はドレイン電極の一方と、電気的に接続され、
前記画素電極は、前記容量素子の一方の電極として機能する領域を有し、
前記画素電極と、前記第2のゲート電極と、前記配線とは、同一の導電膜を加工する工程を経て形成されたものであることを特徴とする表示装置。 - 請求項1において、
端子部を有し、
前記端子部は、第1の導電層と、第2の導電層と、第3の導電層と、を有し、
前記第1の導電層は、前記第2の導電層と電気的に接続され、
前記第3の導電層は、前記第1の導電層及び前記第2の導電層の下方に設けられ、フローティングであることを特徴とする表示装置。
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JP2017198121A Active JP6480536B2 (ja) | 2008-09-30 | 2017-10-12 | 半導体装置 |
JP2019020686A Active JP6567786B2 (ja) | 2008-09-30 | 2019-02-07 | 半導体装置、表示装置 |
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JP2017198121A Active JP6480536B2 (ja) | 2008-09-30 | 2017-10-12 | 半導体装置 |
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JP6480536B2 (ja) | 2019-03-13 |
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JP6567786B2 (ja) | 2019-08-28 |
JP6870130B2 (ja) | 2021-05-12 |
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JP6228253B2 (ja) | 2017-11-08 |
JP2021121020A (ja) | 2021-08-19 |
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JP2022115858A (ja) | 2022-08-09 |
JP2016154245A (ja) | 2016-08-25 |
JP5938059B2 (ja) | 2016-06-22 |
JP2010109342A (ja) | 2010-05-13 |
US20100079425A1 (en) | 2010-04-01 |
JP2019124944A (ja) | 2019-07-25 |
JP7404575B2 (ja) | 2023-12-25 |
JP2019200431A (ja) | 2019-11-21 |
JP2024037859A (ja) | 2024-03-19 |
JP2020109516A (ja) | 2020-07-16 |
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