TWI660420B - 使用遠端電漿源之加強式蝕刻製程 - Google Patents

使用遠端電漿源之加強式蝕刻製程 Download PDF

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TWI660420B
TWI660420B TW103106349A TW103106349A TWI660420B TW I660420 B TWI660420 B TW I660420B TW 103106349 A TW103106349 A TW 103106349A TW 103106349 A TW103106349 A TW 103106349A TW I660420 B TWI660420 B TW I660420B
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plasma
region
fluorine
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oxygen
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TW201443992A (zh
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英格爾尼汀Ｋ
路布米斯基德米崔
陳興隆
凡卡塔拉曼尙卡爾
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美商應用材料股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Abstract

蝕刻圖案化基板的方法可以包括使含氧前驅物流入與基板處理區域流體耦接的第一遠端電漿區域。可以在該第一遠端電漿區域中形成電漿的同時使含氧前驅物流入該區域，以產生含氧電漿流出物。該方法還可以包括使含氟前驅物流入與該基板處理區域流體耦接的第二遠端電漿區域，同時在該第二遠端電漿區域中形成電漿，以產生含氟電漿流出物。該方法可以包括使該含氧電漿流出物和含氟電漿流出物流入該處理區域，以及使用該流出物蝕刻位於該基板處理區域中的圖案化基板。

Description

使用遠端電漿源之加強式蝕刻製程 【相關申請案的交叉引用】
本專利申請案主張於2013年3月1日提出申請並且標題為「使用遠端電漿源之加強式蝕刻製程(Enhanced Etching Processes Using Remote Plasma Sources.)」的美國臨時專利申請案第61/771,264號的優先權權益，為了所有的目的將該申請案之全部揭示內容以引用方式併入本文中。
本技術係關於半導體製程和設備。更具體言之，本技術係關於蝕刻製程化學品及用於改良材料移除的系統。
藉由在基板表面上產生複雜圖案化材料層的製程使得積體電路成為可能。在基板上產生圖案化的材料需要受控制的、去除曝露材料的方法。化學蝕刻被使用於各種的目的，包括將光阻中的圖案轉移進入下面的層中、薄化各個層、或薄化已經存在表面上的特徵之側向尺寸。經常有人尋求擁有蝕刻一種材料比另一種更快以便利例如圖案轉移製程的蝕刻製程。這樣的蝕刻製程被稱為對第一種材料有選擇性。由於 材料、電路及製程多樣性的結果，已經開發出對各種材料具有選擇性的蝕刻製程。
濕HF蝕刻可優先於其他介電質和半導體去除氧化矽。然而，濕製程無法滲透一些侷限的溝槽，而且有時會使剩餘的材料變形。在基板處理區域內形成的局部電漿中產生的乾蝕刻可以滲透更受侷限的溝槽，而且其餘的細微結構表現出較少的變形。然而，局部的電漿會在釋放時通過電弧的產生而損壞基板。
因此，需要用於選擇性蝕刻半導體基板上的材料和結構的改良方法和系統。本技術解決了這些和其它的需求。
蝕刻圖案化基板的方法可以包括使含氧前驅物流入與基板處理區域流體耦接的第一遠端電漿區域。可以在該第一遠端電漿區域中形成電漿的同時使含氧前驅物流入該區域，以產生含氧電漿流出物。該方法還可以包括使含氟前驅物流入與該基板處理區域流體耦接的第二遠端電漿區域，同時在該第二遠端電漿區域中形成電漿，以產生含氟電漿流出物。該方法可以包括使該含氧電漿流出物和含氟電漿流出物流入該處理區域，以及使用該流出物蝕刻位於該基板處理區域中的圖案化基板。
還可以使至少一另外的前驅物與該含氧前驅物或該含氟前驅物中之一或兩者一起流入，而且該另外的前驅物可以選自於由氦、氬、氮及分子氫(H2)所組成之群組。該含氟前驅物可以選自於由原子氟、雙原子氟、三氟化氮、四氟 化碳、氟化氫及二氟化氙所組成之群組。在實施例中該含氟前驅物可以是三氟化氮，而且該含氟電漿流出物可以包括NF*和NF2*物種。在實施例中該含氟電漿流出物基本上還可以由NF*和NF2*物種所組成。該含氧前驅物可以包括選自於由分子氧、臭氧、一氧化二氮、一氧化氮及二氧化氮所組成之群組的前驅物。
該第一遠端電漿區域可以是與該基板處理室分離並流體耦接的遠端電漿單元。該第二遠端電漿區域可設以產生位於該處理室內的電容耦合電漿並與該處理區域流體耦接。該第二遠端電漿區域中的該電漿可以操作於低於或約500瓦的功率電平，而且在實施例中可以操作於低於或約200瓦的功率電平。在蝕刻製程過程中該基板處理區域可以是無電漿的。在揭示的實施例中，該含氟前驅物可以繞過該第一電漿區域。該方法還可以包括在蝕刻製程過程中將該基板溫度保持在或低於約100℃，而且可以包括在蝕刻製程過程中將該基板溫度保持在或低於約50℃。
蝕刻圖案化基板的方法還可以包括使含氧前驅物流入第一遠端電漿區域，該第一遠端電漿區域與基板處理室的第二遠端電漿區域流體耦接，同時在該第一遠端電漿區域中形成電漿，以產生含氧電漿流出物。該方法可以包括將該含氧電漿流出物輸入該第二遠端電漿區域。該方法還可以包括使含氟前驅物流入該第二遠端電漿區域，同時在該第二遠端電漿區域中形成電漿，以產生含氟電漿流出物。該第二遠端電漿區域可以與處理室的基板處理區域流體耦接。該方法可 以進一步包括將該含氧電漿流出物和含氟電漿流出物輸入該基板處理區域，以及使用該含氧和含氟電漿流出物蝕刻位於該基板處理區域中的圖案化基板。
在該方法中該含氟前驅物可以繞過該第一電漿區域，而且該第一遠端電漿區域可以是與該基板處理室分離且流體耦接的遠端電漿單元。該第二遠端電漿區域中的該電漿可以是在該處理室內形成於電極之間的電容耦合電漿。在揭示的實施例中，該第二遠端電漿區域中的該電漿可以操作於低於或約200瓦的功率電平。該方法可以進一步包括以第一電漿功率操作該第一遠端電漿區域，並以第二電漿功率操作該第二遠端電漿區域。在實施例中，該第一電漿功率和該第二電漿功率可以彼此不相同。
蝕刻圖案化基板的方法還可以包括使含氧前驅物流入第一遠端電漿區域，該第一遠端電漿區域與基板處理室的第二遠端電漿區域流體耦接，同時在該第一遠端電漿區域中形成電漿，以產生含氧電漿流出物。該方法可以包括將該含氧電漿流出物輸入該第二遠端電漿區域。該方法還可以包括使三氟化氮繞過該第一遠端電漿區域經由入口流入該第二遠端電漿區域，同時在該第二遠端電漿區域中以低於或約200瓦的功率電平形成電容耦合電漿，以產生NF*和NF2*電漿流出物。該第二遠端電漿區域可以與該處理室的基板處理區域流體耦接。該方法可以進一步包括將該含氧電漿流出物及NF*和NF2*電漿流出物輸入該基板處理區域，並使用該電漿流出物蝕刻位於該基板處理區域中的圖案化基板。在蝕刻過程中 該基板處理區域可以大致上無電漿，而且該圖案化基板可以具有曝露的氧化矽和氮化矽區域。
這樣的技術可以提供許多優於傳統技術的效益。舉例來說，可以基於較可調整的電漿分佈來實現改良的選擇性。另外，較低的操作功率可以改善腔室元件的保護和降解。茲結合以下的描述和附圖來更詳細地描述這些和其他的實施例以及該等實施例之許多優點和特徵。
100‧‧‧方法
110‧‧‧操作
120‧‧‧操作
130‧‧‧操作
140‧‧‧操作
200‧‧‧方法
210‧‧‧操作
220‧‧‧操作
230‧‧‧操作
240‧‧‧操作
250‧‧‧操作
300‧‧‧製程腔室部分
301‧‧‧遠端電漿系統
303‧‧‧冷卻板材
305‧‧‧入口組件
305b‧‧‧入口組件
305c‧‧‧入口組件
306a‧‧‧通道
306b‧‧‧通道
308a‧‧‧內部通道
308b‧‧‧通道
310‧‧‧流體供應系統
314‧‧‧上板
315‧‧‧電漿區域
316‧‧‧下板
317‧‧‧面板
318‧‧‧空間
319‧‧‧第一流體通道
320‧‧‧絕緣環
321‧‧‧第二流體通道
323‧‧‧離子抑制器
325‧‧‧噴灑頭
327‧‧‧小孔
331‧‧‧通孔
333‧‧‧基板處理區域
340‧‧‧電源
353‧‧‧特徵
355‧‧‧基板
358‧‧‧氣體供應區域
359‧‧‧孔
365‧‧‧基座
400‧‧‧系統
402‧‧‧前開式晶圓傳送盒
404‧‧‧機器人手臂
406‧‧‧保持區域
408a-f‧‧‧基板處理室
410‧‧‧第二機器人手臂
可以藉由參考剩餘部分的說明書和圖式來實現對所揭示技術的本質和優點的進一步瞭解。
第1圖圖示依據揭示技術之實施例的蝕刻製程之操作流程圖。
第2圖圖示依據揭示技術之實施例的蝕刻製程之另一操作流程圖。
第3A圖圖示依據揭示技術之實施例的基板處理系統之示意性剖視圖。
第3B圖圖示依據揭示技術之實施例的一部分基板處理室之示意性剖視圖。
第3C圖圖示依據揭示技術之實施例的一部分基板處理室之另一示意性剖視圖。
第3D圖圖示依據揭示技術之實施例的一部分基板處理室之另一示意性剖視圖。
第3E圖圖示依據揭示技術之實施例的噴灑頭之仰視圖。
第4圖圖示依據揭示技術之實施例的示例性基板處理系統之俯視圖。
在附圖中，相似的元件及/或特徵可以具有相同的數值參考標號。另外，可以藉由在參考標號後面接續可區分相似元件及/或特徵的字母來區分相同類型的各種元件。假使在說明書中只有使用第一個數值參考標號，則此描述係適用於具有相同第一數值參考標號的類似元件及/或特徵中之任一者，並與字母後綴無關。
本技術包括用於相對於其他材料選擇性地蝕刻圖案化半導體基板上的材料的改良製程和化學作用概況。雖然傳統的製程可能會討論蝕刻製程，但目前所描述的架構使用了多個電漿的架構來個別激發前驅物。所描述的技術可以藉由提供用於選擇前驅物的更短流動途徑而有利地最少化電漿物種的重組。此外，該技術可以藉由利用多個蝕刻操作使用來激發一或更多種前驅物的方法而允許改良電漿分佈。
該方法還可以有益地減少流經與處理室耦接的遠端電漿單元的物種之數量。例如，用於蝕刻的前驅物流體時常可以包括含氟前驅物及含氧及/或含氮前驅物。遠端電漿系統的電漿腔以及到處理室的分配元件可以被塗覆或內襯，以提供對抗反應性自由基的保護。然而，假使兩種自由基物種皆在遠端電漿單元內產生，則所產生的電漿流出物可能會與該單元的塗層或內襯進行不同的交互作用。因此，該單元可能會隨著時間而被前驅物降解。然而，在本技術中，可以使單 一種前驅物流過遠端電漿單元，因此該單元可以被特定地設計或塗覆，以防止個別前驅物的流出物造成降解。
該技術還表現出令人驚奇的優點，即藉由提供前驅物物種通過獨立的遠端電漿系統可以訂製出每種流體的特定離解和電漿特性，以提供改良的蝕刻性能。此外，藉由在腔室內利用減少的能量電容耦合電漿(CCP)可以減少腔室的降解，從而提供具有較少微粒污染的改良製程性能。因此，本文所描述的系統在化學調變方面提供了改良的靈活性，同時還提供了改良的蝕刻性能。將在下面更詳細地描述這些和其他的效益。
為了更好地瞭解和理解該技術，現在參照第1圖，第1圖圖示依據實施例的蝕刻製程之方法100的流程圖。在第一操作之前，可以將基板圖案化而留下矽、氧化矽、氮化矽以及其他氧化物、氮化物、金屬包括鎢、銅、鈦、鉭等、或其他元件的曝露區域。矽可以是非晶形的、結晶的或多晶的，在這種情況下矽通常被稱為多晶矽。可能已經或可能尚未在同一腔室中進行先前的沉積和形成製程。假使在不同的腔室中進行先前的沉積和形成製程，則可以將基板傳送進入處理室進行蝕刻製程。可能已經進行了各種前端處理，包括形成閘極、通孔及其他的結構。然後可以將圖案化的基板遞送到處理室的基板處理區域。
在實施例中，假使先前的操作是在蝕刻製程將發生的同一腔室中進行，則基板可能已經位在處理區域中。在操作110，在電漿形成於第一遠端電漿區域時可以使含氧前驅物 流入與基板處理區域流體耦接的第一遠端電漿區域，以產生含氧電漿流出物。含氧前驅物可以包括各種的含氧化合物，而且可以包括一或更多種前驅物，該前驅物例如分子氧、臭氧、一氧化二氮(N2O)、一氧化氮(NO)、二氧化氮(NO2)及其他的含氧前驅物。該前驅物可以在電漿中解離，以產生各種電漿流出物，該等電漿流出物可以包括O*、NO*及其他可用於蝕刻操作的物種。
在操作120，可以使含氟前驅物流入第二遠端電漿區域，該第二遠端電漿區域與該處理區域是分開但流體耦接的。在前驅物的輸送過程中，可以在第二遠端電漿區域中形成電漿，而且可以使用該電漿來產生含氟電漿流出物。在此製程中可以使用幾個氟的來源，而且一般來說，可以使含氟前驅物流入包括至少一種前驅物的第二遠端電漿區域，該前驅物係選自於由原子氟、雙原子氟、三氟化氮、四氟化碳、氟化氫及二氟化氙所組成的群組。該含氟前驅物可以包括三氟化氮，而且所產生的含氟電漿流出物可以包括NF*和NF2*物種。如以下將進一步說明的，在第二遠端電漿區域中形成的電漿可以被特別地設置成以限制自由基氟物種或F*物種的方式激發含氟前驅物，使得含氟電漿流出物基本上由NF*和NF2*物種所組成。
該第一和第二遠端電漿區域中之任一者或兩者在本文中可以被稱為遠端電漿區域，而且可以在與處理室不同的模組中，或是作為該處理室內的隔室或界定的區域。可以在遠端電漿區域內形成電漿，以從含氧和含氟前驅物產生電漿 流出物。在操作130，可以使含氧電漿流出物和含氟電漿流出物流入腔室的處理區域。在操作140可以使用含氧和含氟電漿流出物的組合選擇性地蝕刻圖案化的基板，使得基板上的曝露材料可以被蝕刻。
已經進行了蝕刻之後，可以從基板處理區域去除反應性化學物種，然後可以從處理區域移出基板。當大致上以這種方式進行時，該方法可以允許氮化矽區域被以比矽或氧化矽區域更快的速率蝕刻。使用本文所述的氣相乾蝕刻製程，與其他材料(例如矽及/或氧化矽)的蝕刻速率相比，就氮化矽的蝕刻速率建立超過2：1的蝕刻選擇率是可能的。在本技術的實施例中，氮化矽的蝕刻速率可以超過矽及/或氧化矽的蝕刻速率高達或約5倍或更多、約10倍或更多、約15倍或更多、約20倍或更多、約50倍或更多、約75倍或更多、約100倍或更多等等或更大。
前驅物的氣流比率可以包括各種的流動比率，例如小於、大於、或約為1：1000、1：500、1：250、1：100、1：50、1：25、1：15、1：10、1：5、1：1、5：1、10：1、15：1、25：1、50：1、100：1、250：1、500：1、1000：1等的原子流動比率(O：F)。一或更多種另外的前驅物可以被與含氧及/或含氟前驅物中之任一者或兩者一起輸送。該另外的前驅物可以包括相對惰性的氣體，而且可以是選自於由氦、氬、氮及分子氫(H2)所組成之群組的一或更多種前驅物。惰性氣體可被用於改良電漿穩定性及/或攜帶液體前驅物到遠端電漿區域。
可以使用不同氣體的流動速率和比例來控制蝕刻速 率和蝕刻選擇性。在實施例中，含氟前驅物可以包括流動速率在約1sccm(標準立方公分每分鐘)和5000sccm之間的NF3。可以包括流動速率在約1sccm和5000sccm之間的含氧前驅物，而且可以在任一前驅物流中包括流動速率在約0sccm和3000sccm之間的一或更多種載送氣體。在實施例中可以保持高的O：F原子流動速率或比率，以減少或消除形成在基板材料上的固體殘餘物，例如氧化物。固體殘餘物的形成可以消耗一些氧化矽，從而可以降低蝕刻製程的矽選擇性。
在本技術的實施例中，可以在從遠端電漿區域傳送到基板處理區域的過程中使用離子抑制器來過濾來自電漿流出物的離子。離子抑制器的功能是減少或消除從電漿產生區域行進到基板的離子性帶電物種。未帶電的中性和自由基物種可以通過離子抑制器的開口而在基板進行反應。應注意的是，完全消除在基板周圍的反應區域中的離子性帶電物種並不總是所期望的目標。在許多情況下，離子物種必須到達基板來進行蝕刻及/或沉積製程。在這些情況下，離子抑制器有助於將反應區域中的離子物種濃度控制在可以協助製程的水平。在實施例中，氣體分配組件的上板可以包括離子抑制器。
在蝕刻製程的過程中，基板可以被保持在等於或低於約400℃下，而且可以被保持在等於或低於約300℃、200℃、100℃、80℃、75℃、50℃、25℃、10℃、0℃或更低。在製程的過程中，處理室可以被保持在等於或低於約100托，而且可以被保持在等於或低於約50托、25托、15托、5托、1托、0.1托等，或介於約0.1毫托和約10托之間。藉由 將基板溫度保持在較低的溫度，例如約10℃或更低，並將製程腔室保持在低於約10托的壓力下，可以在去除氮化矽的過程中進一步限制氧化物的去除量。
如上所述，可以將第一和第二遠端電漿區域與基板處理區域流體耦接，以輸送電漿流出物到處理區域，同時在蝕刻製程的過程中處理區域是無電漿的。在本文中可以將基板處理區域描述為在蝕刻圖案化基板的過程中是無電漿的。無電漿並不一定意味著該區域沒有電漿。該電漿區域內形成的離子化物種和自由電子可以前進通過噴灑頭或歧管中的孔隙或孔，但基板所在的區域基本上不被施加到電漿區域的電漿功率激發。在腔室電漿區域中的電漿邊界是難以界定的，而且可能會通過噴灑頭的孔侵入基板處理區域。在感應耦合電漿的情況下，可以在基板處理區域內直接產生少量的離子化。
在揭示的實施例中，第一和第二遠端電漿區域可以是相似的或彼此不同的。第一遠端電漿區域可以是與處理室分離並且可與該腔室流體耦接的遠端電漿單元(「RPS單元」)。在各種實施例中，該遠端單元可以在低於或約10W至高達或約10或15kW之間的功率電平下操作。RPS單元的電源和電漿分佈可以被有利地調整到符合所用的特定前驅物，例如含氧前驅物。以這種方式進行，該單元可以在設計用於某離解程度的該前驅物的功率電平下操作。當需要更完整的離解來產生例如O*和NO*物種時，處理該含氧前驅物的RPS單元可以在遠更高的功率電平下操作。因此，該RPS單 元可以在高達或高於約1000W和高達或高於約10kW或更大之間操作。在實施例中，示例性處理系統中施加的射頻(RF)頻率可以為低於約500kHz的低RF頻率、介於約10MHz和約15MHz的高RF頻率或大於或約1GHz的微波頻率。如此一來，該RPS單元可設以在基於該第一前驅物的組成所選擇的第一功率電平下操作。
該第二遠端電漿區域可以位於該處理室中被保持獨立於該基板處理區域的一部分內。例如，該第二遠端電漿區域可以被界定在該腔室內並以噴灑頭或歧管與該處理區域分離。該第二遠端電漿區域可以是形成於該區域內的電容耦合電漿(「CCP」)。在揭示的架構中，該第二遠端電漿區域可以流體式地位在該第一遠端電漿區域和該處理區域之間。該第二遠端電漿區域可以由兩個或更多的允許電漿被形成於該區域內的電極所界定。含氟前驅物可以被輸送進入該第二遠端電漿區域，而且可以被輸送以便繞過該第一電漿區域。
在示例性的實施例中，可以使含氟前驅物的解離程度不同於該含氧前驅物的解離。該含氟前驅物可以具有較弱的前驅物分子鍵結能，或者可能需要較低的解離程度，因此可以在該第二遠端電漿區域內以不同的功率電平形成電漿。當含氟前驅物僅部分解離時，可以有利地產生改良的蝕刻輪廓。例如，當含氟前驅物被完全離解時，F*自由基物種可能會不利地攻擊腔室壁及/或基板。然而，當含氟前驅物(例如三氟化氮)部分解離成NF*和NF2*物種時，在進行特定蝕刻時腔室和基板可以較不受影響。因此，可以以較低的功率電 平操作CCP，以僅產生部分離解的含氟前驅物。
部分解離可以減少F*自由基物種的量，使得含氟電漿流出物基本上由NF*和NF2*物種所組成。舉例來說，雖然若含氟前驅物為三氟化氮時一些F*和未激發的NF3物種可以存在，但這些物種可以在被引入腔室處理區域的流出物中被減到最少。例如，使含氟電漿流出物基本上由NF*和NF2*組成可能意味著該含氟電漿流出物包含至少約75%由輸入處理區域的含氟前驅物所衍生的物種混合物。基本上由NF*和NF2*組成還可能意味著此兩種物種包含至少約80%、85%、90%、95%、99%、99.9%等或更多的由輸入處理區域的含氟前驅物所衍生的物種混合物。假使使用了其他包括氮以外的物種的前驅物，例如二氟化氙，則相同的考量也可適用，使得完全離解的F*物種被最少化。
操作傳統的CCP可能會降解腔室的元件，該元件可以去除可能不慎地散佈在基板上的顆粒。由於可能提供橫跨半導體基板的短路的金屬顆粒，這樣的顆粒可能會影響從這些基板形成的元件之性能。然而，所揭示技術的CCP可以操作於降低的或顯著降低的功率下，因為CCP可以只被使用來部分離解含氟前驅物及/或保持含氧電漿流出物，而且不會完全離子化電漿區域內的物種。例如，CCP可被操作於低於或約1kW、500W、250W、200W、150W、100W、50W、20W等或更低的功率電平。此外，CCP可以產生平坦的電漿分佈，從而在空間內提供均勻的電漿分佈。如此一來，可以將更均勻的電漿輸送到腔室處理區域的下游，從而提供改良 的、橫跨基板的蝕刻輪廓。
此外，藉由提供另外的電漿源，例如CCP源，在RPS單元產生的電漿顆粒可以持續或增強，並且重組的速率可以被進一步調整。舉例來說，含氧電漿流出物可以被輸入其中形成CCP的第二遠端電漿區域中。在此第二遠端電漿區域中的電漿可以保持RPS內產生的離解程度，並防止電漿流出物在進入腔室處理區域之前重組。
來到第2圖，圖示的是依據所揭示實施例的蝕刻製程之操作的方法200之另一流程圖。方法200可以包括一或更多個如先前關於第1圖所討論的操作。該方法可以包括在操作210使含氧前驅物流入與基板處理室的第二遠端電漿區域流體耦接的第一遠端電漿區域，同時在第一遠端電漿區域中形成電漿，以產生含氧電漿流出物。第一遠端電漿區域可以是如前面所討論與處理室分離並與處理室流體耦接的RPS單元，或者可以是從腔室的其他區域隔出的一部分腔室。在操作220，該含氧電漿流出物可以被輸入第二遠端電漿區域，該第二遠端電漿區域可以是隔出的部分處理室。
在操作230，可以使含氟前驅物流入第二遠端電漿區域，同時在其中形成電漿，以產生含氟電漿流出物。第二遠端電漿區域可以與腔室的基板處理區域流體耦接，而且可以被至少部分界定該第二遠端電漿區域的電極物理性分離。可以允許含氧電漿流出物和含氟前驅物/電漿流出物在該第二遠端電漿區域內混合，以產生更均勻的物種混合物。在操作240，含氧電漿流出物和含氟電漿流出物可以被輸入基板處理 區域。噴灑頭、離子抑制器、歧管或其他的材料分配器可以被定位在第二遠端電漿區域和腔室的處理區域之間，並且可以同時作為用於第二遠端電漿區域的電極以及前驅物被輸入處理區域的機制。噴灑頭可以進一步混合前驅物，以改善整體分佈的均勻性。在操作250，可以使用電漿流出物來蝕刻圖案化的基板。
可以繞過第一遠端電漿區域而將含氟前驅物直接輸入第二遠端電漿區域。以這種方式，可以將與含氧前驅物不同的電漿分佈使用於含氟前驅物，以影響前驅物的解離或電漿分佈。第二遠端電漿區域可以是電極或界定第二遠端電漿區域的腔室元件之間形成的CCP。該CCP可以如前面所討論的操作於約200瓦或更低的功率電平，以提供輸入第二遠端電漿區域的含氟前驅物之有限或部分解離。
在揭示的實施例中，該第一和第二遠端電漿區域的操作可以是相似或不同的。例如，可能需要含氧前驅物有完全解離或較高程度的解離，或是可能需要更多的能量來斷裂前驅物的鍵結。因此，第一遠端電漿區域可以操作於第一電漿功率。第二遠端電漿區域可以操作於較低的功率，以提供有限量的含氟前驅物解離。這兩種功率電平可以是彼此不同的，並且第二遠端電漿區域可以操作於低於第一遠端電漿區域的功率電平的電平。
以這樣的方式執行該方法可以藉由降低製程的操作功率來提供另外的益處。不僅操作於較低電平的CCP將產生含氟電漿流出物，而且輸入第二遠端電漿區域的含氧電漿流 出物可以與含氟前驅物相互作用，以幫助該前驅物解離而產生含氟電漿流出物。藉由利用組合的製程，諸如氮化矽的氮化物可以被蝕刻地比矽、氧化矽及其他基板上曝露的材料更快。如將可被瞭解的，可以使用對腔室壓力和電漿功率的其他修改來進一步將蝕刻製程調整為可能被需要的。有利的是，可以進行這些製程的調整，而不需破壞真空條件或將基板移到另外的腔室中。這可以縮短整體的處理時間，並比傳統的技術節省成本。蝕刻製程參數、化學品及元件的其他實例係揭示於以下描述示例性處理室和系統的過程中。
示例性處理系統
第3A圖圖示示例性的製程系統部分300之剖面圖，製程系統部分300在處理室內具有隔開的電漿產生區域。在薄膜的蝕刻過程中，該薄膜例如氮化鈦、氮化鉭、鎢、矽、多晶矽、氧化矽、氮化矽、氧氮化矽或氧碳化矽等，可以使製程氣體經由氣體入口組件305流入第一電漿區域315。腔室內的電漿區域315可以類似於先前討論的第二遠端電漿區域，而且可以如以下所討論的在處理區域333的遠端。遠端電漿系統(「RPS」)301可以被包括在系統中，而且可以處理第一氣體，然後該第一氣體經由氣體入口組件305前進。RPS單元301可以類似於先前討論的第一遠端電漿區域。入口組件305可以包括兩個或更多個不同的氣體供應通道，其中第二通道可以繞過RPS 301，如以下將參照第3B圖和第3C圖討論的。因此，在揭示的實施例中，至少一種前驅物氣體可以以未被激發的狀態被輸送到處理室，例如含氟前驅物。 在另一個實例中，通過RPS設置的第一通道可被用於含氧前驅物，而在揭示的實施例中繞過RPS的第二通道可被用於含氟前驅物。含氧前驅物可以在RPS 301內被激發，然後進入第一電漿區域315。因此，在揭示的實施例中，例如如上所討論的含氟前驅物及/或含氧前驅物可以通過RPS 301或繞過RPS單元。這種配置所涵蓋的各種其他實例將可類似地被瞭解。
依據揭示的實施例，冷卻板材303、面板317、離子抑制器323、噴灑頭325及上面放置基板355的基座365被圖示出並且可以每個皆被包括。基座365可以具有熱交換通道，熱交換流體流過該熱交換通道來控制基板的溫度。這個架構可以容許基板355的溫度被冷卻或加熱來保持相對的低溫，例如介於約-20℃至約200℃之間。熱交換流體可以包含乙二醇及/或水。還可以使用嵌入的電阻加熱器元件來電阻式地加熱基座365的晶圓支撐盤(可以包含鋁、陶瓷或上述之組合)，以實現相對的高溫，例如從高達或約100℃至約或約1100℃。加熱元件可以作為一或更多個迴圈被形成在基座內，並且加熱器元件的外部可以與支撐盤的周邊相鄰，而加熱器元件的內部係沿著具有較小半徑的同心圓路徑。接到加熱器元件的接線可以通過基座365的底桿，基座365的底桿可被進一步設置來旋轉。
面板317可以是金字塔形、圓錐形或具有狹窄頂部擴展到寬底部的另一個類似結構。面板317可以另外地如圖示為平坦的，並且包括複數個用於分配製程氣體的貫通通道。取決於RPS 301的用途，電漿產生氣體及/或電漿激發物種可以通過面板317中的複數個孔，如第3D圖所圖示，以更均勻地輸入第一電漿區域315。
示例性的架構可以包括使氣體入口組件305開放進入氣體供應區域358，藉由面板317將氣體供應區域358與第一電漿區域315分隔，使得氣體/物種流經面板317中的孔進入第一電漿區域315。可以選擇結構和操作的特徵，以防止電漿從第一電漿區域315明顯回流返回進入供應區域358、氣體入口組件305及流體供應系統310。結構特徵可以包括選擇面板317中的孔之尺寸和橫截面幾何形狀，以使回流電漿失活。操作特徵可以包括保持氣體供應區域358和第一電漿區域315之間的壓力差，該壓力差保持電漿單向流動通過噴灑頭325。圖示面板317(或腔室的導電頂部)和噴灑頭325具有位於特徵之間的絕緣環320，絕緣環320允許AC電位被相對於噴灑頭325及/或離子抑制器323施加到面板317，離子抑制器323可以與噴灑頭325電耦接或類似地被絕緣。絕緣環320可以位於面板317和噴灑頭325及/或離子抑制器323之間，以能夠在該第一電漿區域中形成電容耦合電漿(CCP)。擋板(未圖示)可以被另外放置在第一電漿區域315中或以其他方式與氣體入口組件305耦接，以影響經由氣體入口組件305進入該區域的流體流動。
離子抑制器323可以包含板材或其他在整個結構中界定複數個孔的幾何形狀，該結構設以抑制離子化帶電物種遷移出第一電漿區域315，同時允許未帶電的中性或自由基物 種通過離子抑制器323進入該抑制器和噴灑頭之間的活化氣體輸送區域。在揭示的實施例中，離子抑制器323可以包含具有各種孔架構的多孔板材。這些未帶電的物種可以包括高反應性的物種，該高反應性的物種被以較低反應性的載送氣體輸送通過該等孔。如以上所指出的，可以減少離子物種遷移通過該等孔，而且在一些情況下可以完全抑制離子物種遷移通過該等孔。控制離子物種通過離子抑制器323的量可以對被帶入而與下方的晶圓基板接觸的氣體混合物提供增加的控制，進而可以增加對氣體混合物之沉積及/或蝕刻特性的控制。例如，調整氣體混合物的離子濃度可以明顯改變氣體混合物的蝕刻選擇性，例如SiNx：SiOx蝕刻比、SiN：S蝕刻比等。在進行沉積的替代實施例中，還可以對介電質材料平移保形對可流動類型沉積的平衡。
離子抑制器323中的複數個孔可設以控制活性氣體通過離子抑制器323，該活性氣體例如離子、自由基及/或中性物種。例如，可以控制孔的深寬比、或孔的直徑對長度及/或孔的幾何形狀，從而減少活化氣體中通過離子抑制器323的離子化帶電物種的流量。離子抑制器323中的孔可以包括面向第一電漿區域315的錐形部分以及面向噴灑頭325的圓柱形部分。可以設計圓柱形部分的形狀和尺寸來控制離子物種通到噴灑頭325的流量。還可以施加可調整的電偏壓到離子抑制器323作為控制通過抑制器的離子物種流量的另外手段。
離子抑制元件323可以發揮減少或消除離子化帶電 物種從電漿產生區域前進到基板的量的功能。未帶電的中性和自由基物種仍可以通過離子抑制器中的開口而與基板反應。應當指出的是，完全消除圍繞基板的反應區域中的離子化帶電物種並不總是所期望的目標。在許多的情況下，離子物種必須到達基板，以進行蝕刻及/或沉積製程。在這些情況下，離子抑制器可以有助於以協助製程的水平控制反應區域中的離子物種濃度。
噴灑頭325與離子抑制器323的組合可以允許電漿存在於第一電漿區域315中，以避免在基板處理區域333中直接激發氣體，同時還允許激發的物種從第一電漿區域315進入基板處理區域333。以這種方式中，腔室可設以防止電漿接觸被蝕刻的基板355。這可以有利地保護若直接被產生的電漿接觸可能會被損壞、錯位或以其他方式變形的各種複雜結構和圖案化在基板上的薄膜。此外，當允許電漿接觸基板或接近基板的水平時，可以提高氧化物物種的蝕刻速率。因此，假使曝露的材料是氧化物，則可以藉由將電漿保持在基板的遠端來進一步保護這個材料。
該處理系統可以進一步包括與處理室電耦接的電源340，以提供電力給面板317、離子抑制器323、噴灑頭325及/或基座365，以在第一電漿區域315或處理區域333中產生電漿。電源可設以視所進行的製程來輸送可調整的電力量至腔室。這樣的配置可允許可調整的電漿被用於所進行的製程。不像往往存在打開或關閉的功能的遠端電漿單元，可調整的電漿可設以輸送特定量的電力到電漿區域315。這接著可 以允許發展出特定的電漿特性，使得前驅物可以被以特定的方式離解，以強化由這些前驅物產生的蝕刻輪廓。例如，此可提供部分離解的三氟化氮，如先前所例示。
電漿可以在噴灑頭325上方的第一電漿區域315中或噴灑頭325下方的基板處理區域333中被點燃。電漿可以存在第一電漿區域315中，以從含氟前驅物的進入流產生自由基-氟前驅物。可以在處理室的導電性頂部(例如面板317)和噴灑頭325及/或離子抑制器323之間施加通常在射頻(「RF」)範圍中的交流電壓，以在沉積過程中在第一電漿區域315中點燃電漿。RF電源可以產生13.56MHz的高射頻頻率，但也可能會產生單獨的其他頻率或與13.56MHz頻率結合的其他頻率。
電漿功率可以有各種的頻率或多種頻率的組合。在示例性的處理系統中，電漿可以由被相對於離子抑制器323及/或噴灑頭325輸送到面板317的RF功率提供。在不同的實施例中，RF功率可以在約10瓦和約2000瓦之間、約100瓦和約2000瓦之間、約200瓦和約1500瓦之間、約0瓦和約500瓦之間或約200瓦和約1000瓦之間。在不同的實施例中，該示例性的處理系統中施加的RF頻率可以是小於約200kHz的低RF頻率、在約10MHz和約15MHz之間的高RF頻率或大於或約1GHz的微波頻率。電漿功率可以被電容耦合或感應耦合進入遠端電漿區域。在替代的配置中，該腔室可設以使用UV或電子束源來激發或活化反應性物種。這些性能可被用以與電漿結合或取代電漿。
當開啟基板處理區域333中的底部電漿以例如固化薄膜或清洗鄰接基板處理區域333的內表面時，可以使頂部電漿區域315停留在很低或無功率下。可以藉由在噴灑頭325和基座365或腔室底部之間施加交流電壓來點燃基板處理區域333中的電漿。可以在電漿存在的同時將清洗氣體引入基板處理區域333。
可以藉由本文所述的噴灑頭之實施例使流體(諸如前驅物，例如含氟前驅物)流入處理區域333。在電漿區域315中從製程氣體衍生的激發物種可以行進通過離子抑制器323及/或噴灑頭325中的孔，並與另外經由噴灑頭流入處理區域333的前驅物(例如含氧前驅物)反應。或者，假使所有的前驅物物種是在電漿區域315中被激發，則沒有另外的前驅物可以流過噴灑頭的單獨部分。極少或沒有電漿可以存在於處理區域333中。在揭示的申請案中，前驅物的激發衍生物可以在基板上方的區域中結合，並且偶爾在基板上結合，以蝕刻結構或去除基板上的物種。
直接在第一電漿區域315中激發流體或在RPS單元301中激發流體可以提供幾個效益。由於第一電漿區域315中的電漿，可以增加處理區域333內衍生自流體的激發物種的濃度。這種增加可能是由於電漿在第一電漿區域315中的位置所致。處理區域333可以位於比遠端電漿系統(RPS)301更靠近第一電漿區域315，故留下較少的時間讓激發物種經由與其他氣體分子、腔室壁及噴灑頭的表面碰撞而離開激發態。
還可以提高處理區域333內衍生自製程氣體的激發 物種的濃度之均勻性。這可以得自第一電漿區域315的形狀，第一電漿區域315的形狀可以更類似於處理區域333的形狀。在RPS 301中產生的激發物種相對於通過靠近噴灑頭325中心的孔的物種可以行進更遠的距離，以通過鄰近噴灑頭325邊緣的孔。較大的距離可能會導致激發物種的激發減少，而且例如可能會導致靠近基板邊緣的蝕刻速率較緩慢。在第一電漿區域315中激發流體可以減輕流過RPS 301或者是繞過RPS單元周圍的流體的這種變化。
處理氣體可以在第一電漿區域315中被激發，而且可以以激發態通過噴灑頭325到達處理區333。雖然可以在處理區域333中產生電漿，但也可以替代地不在處理區域中產生電漿。在一個實例中，處理氣體或前驅物的唯一激發可以是來自在RPS 301和電漿區域315中激發處理氣體，以與在處理區域333中的他者反應。如前面所討論的，這可能是為了保護基板355上的圖案化結構。
除了流體前驅物之外，可以為了不同的目的在不同的時間引導其他的氣體，包括載送氣體，以幫助輸送。在沉積過程中，可以引導處理氣體來從腔室壁、基板、沉積薄膜及/或薄膜去除不要的物種。可以在電漿中激發處理氣體，然後使用處理氣體來減少或去除腔室內殘留的內容物。在其他所揭示的實施例中，也可以使用沒有電漿的處理氣體。當處理氣體包括水蒸汽時，可以使用質量流量計(MFM)、噴射閥或由市售的水蒸汽產生器來實現輸送。可以經由RPS單元或繞過RPS單元將處理氣體引到處理區域333，而且可以進 一步在第一電漿區域中激發處理氣體。
第3B圖和第3C圖圖示入口組件305的特徵之示例性詳細視圖，入口組件305提供一或更多種前驅物到處理室。如第3B圖所圖示，第一和第二前驅物可以被輸送通過入口組件305b中的獨立通道。例如，已在RPS單元301中被活化的含氧前驅物可以進入入口組件305，並沿著通道306a前往氣體供給區域358，用以輸入電漿區域315。通道306a可以是圍繞內部通道308a的環形或半環形外部通道，內部通道308a可以為第二前驅物提供可繞過RPS單元301的流體路徑。例如，含氟前驅物可以經由通道308a被輸往電漿區域315。通道308a可以延伸通過氣體供應區域358，以將前驅物直接輸入電漿區域315，或者通道308a可以將前驅物輸入氣體供應區域358，用以與被沿著路徑306a輸送的前驅物進行初步混合。
第3C圖圖示入口組件305和輸送通道306b和308b的其他實施例。如圖示，該等前驅物可以被個別輸入入口組件305c的下部區域310，在下部區域310該等前驅物可被允許在到達氣體供應區域358之前進行初步相互作用。例如，含氧前驅物可被從RPS單元301沿著通道306b輸入入口組件305，而含氟前驅物可被輸送以便繞過RPS單元301並沿著通道308b進入入口組件305。通道306b和308b可以將該等前驅物輸入入口組件305c的下部區域310，在下部區域310該等前驅物在進入氣體供應區域358之前進行相互作用和混合。下部區域310可以包括鑽孔或形成於界定區域310的壁 內的通道或流動路徑，以改良混合並增加進入氣體供給區域358的流體紊流。例如，類似膛線的流動線可以在下部區域310內被蝕刻出，以使前驅物或電漿流出物在進入氣體供給區域358之前形成旋渦並混合。
第3D圖圖示藉由面板317影響處理氣體分佈的特徵353之詳細視圖。如第3A圖和第3D圖中所圖示，面板317、冷卻板303及氣體入口組件305相交以界定出氣體供應區域358，製程氣體可以從氣體入口305被輸入氣體供應區域358。氣體可以填滿氣體供應區域358並通過面板317中的孔359流到第一電漿區域315。孔359可設以以大致上單向的方式來引導流動，使得製程氣體可以流入處理區域333，但是也可以在穿過面板317之後被部分地或完全地防止回流進入氣體供應區域358。
可以將用於處理室部分300的氣體分配組件(例如噴灑頭325)稱為雙通道噴灑頭(「DCSH」)並另外詳述於本文中的第3A圖及第3E圖所描述的實施例中。該雙通道噴灑頭可以準備用於蝕刻製程，該蝕刻製程允許在處理區域333外部分離蝕刻劑，以在被輸入處理區域之前提供有限的、與腔室元件和彼此的交互作用。
噴灑頭325可以包含上板314和下板316。該等板可以彼此耦接，以界定該等板之間的空間318。該等板的耦接可以便於提供通過上板和下板的第一流體通道319及通過下板316的第二流體通道321。所形成的通道可設以單獨經由第二流體通道321提供從空間318通過下板316的流體進出， 並且可以將第一流體通道319與該等板之間的空間318和第二流體通道321流體隔離。可以經由氣體分配組件325的一側流體進出空間318。例如，可以將不與前述活化前驅物相互作用的其他前驅物經由第二流體通道321輸送到處理區域，使得該等活化前驅物和該等其他前驅物只在個別進入處理區域333時相互作用。雖然第3圖的示例性系統包括DCSH，但應當理解的是，可以使用替代的分配組件來在到達處理區域333之前將第一和第二前驅物保持流體隔離。例如，可以使用多孔板和板下面的管，雖然其他的配置也可以以降低的效率進行操作或無法提供如同所述雙通道噴灑頭一樣均勻的處理。或者，當所使用的唯一前驅物將被經由入口組件305輸送並且所有的前驅物將流自電漿區域315時，DCSH可能是不需要的，而且可以使用單一板材歧管或多孔板材來在將前驅物直接輸送到處理區域333的同時進一步混合前驅物。
在圖示的實施例中，噴灑頭325可以經由第一流體通道319分配製程氣體，在第一電漿區域315及/或RPS單元301中被電漿激發之後該製程氣體含有電漿流出物。在實施例中，被引入RPS 301的製程氣體可以包括含氧前驅物，而被輸入第一電漿區域315的前驅物可以含有氟，例如CF4、NF3或XeF2。該前驅物還可以包括一或更多種載送氣體，例如氦氣、氬氣、氮氣(N2)等。電漿流出物可以包括製程氣體的離子化或中性衍生物，而且本文中還可以將電漿流出物稱為自由基-氟前驅物，以指稱引入的製程氣體之原子組分。
第3E圖為依據揭示的實施例用於處理室的噴灑頭 325和下板316之仰視圖。噴灑頭325與第3A圖中圖示的噴灑頭一致。圖示第一流體通道319的一個視圖的通孔331可以具有複數種形狀和架構，以控制並影響通過噴灑頭325的前驅物流動。圖示第二流體通道321的一個視圖的小孔327可以大致上均勻地分佈在噴灑頭的表面上，即使在通孔331之間亦然，此可有助於在前驅物離開噴灑頭時提供比其他架構更均勻的前驅物混合。
可以將第一電漿區域315或遠端電漿系統中的區域稱為遠端電漿區域。在實施例中，一或更多種自由基前驅物，例如自由基-氟前驅物及/或自由基-氧前驅物係形成於遠端電漿區域中並進入基板處理區域，在基板處理區域中該等前驅物可以或可以不與另外的前驅物結合。在實施例中，另外的前驅物只被自由基-氟和自由基-氧前驅物激發。在實施例中，基本上可以將電漿功率僅施加於遠端電漿區域，以確保自由基-氟前驅物提供主要的激發。在不同的實施例中，可以使三氟化氮或另一種含氟前驅物以約25sccm和約500sccm之間、約50sccm和約150sccm之間或約75sccm和約125sccm之間的速率流入第一電漿區域315。
進入腔室的前驅物之結合流動速率以體積計可以佔整體氣體混合物的0.05%至約20%；其餘的是載送氣體。在實施例中可以使含氟前驅物流入遠端電漿區域，但電漿流出物可以具有相同的體積流量比。在含氟前驅物的情況下，可以在含氟氣體之前先使淨化或載送氣體進入遠端電漿區域，以穩定遠端電漿區域內的壓力。
在前驅物、任何載送氣體和電漿流出物流入基板處理區域333的過程中，可以將基板處理區域333保持在各種壓力下。在不同的實施例中，可以將該壓力保持在約0.1毫托和約100托之間、約1托和約20托之間或約1托和約5托之間。
可以將沉積系統的實施例結合到更大的製造系統中，以生產積體電路晶片。第4圖圖示依據所揭示實施例的沉積、蝕刻、烘烤及固化腔室的一個這種系統400。在該圖中，一對前開式晶圓傳送盒(「FOUP」)402供應各種尺寸的基板，該等基板由機器人手臂404接收，並在被放入其中一個基板處理室408a-f之前被放入低壓保持區域406。可以使用第二機器人手臂410來在保持區域406和基板處理室408a-f之間來回運送基板晶圓。可以整體配備每個基板處理室408a-f，以進行數種基板處理操作，除了循環層沉積、原子層沉積、化學氣相沉積、物理氣相沉積、蝕刻、預清洗、除氣、定向及其他的基板製程之外，該基板處理操作還包括本文所述的乾蝕刻製程。
基板處理室408a-f可以包括一或更多個系統元件，用於沉積、退火、固化及/或蝕刻基板晶圓上的介電質薄膜。在一個架構中，可以使用兩對處理室(例如408c-d和408e-f)來在基板上沉積介電質材料，並且可以使用第三對處理室(例如408a-b)來蝕刻沉積的介電質。在另一個架構中，可以將全部的三對腔室(例如408a-f)配置為蝕刻基板上的介電質薄膜。可以在與不同的實施例中所圖示的製造系統分離的腔 室中進行所描述的任一種或更多種製程。
在前面的描述中，為了說明的目的，已經闡述許多的細節，以提供對本技術之各種實施例的瞭解。然而，對於本技術領域中具有通常知識者而言，顯而易見的是，可以不使用這些細節中的一些、或是使用其他的細節來實施某些實施例。
有了揭示的幾個實施例，在本技術領域中具有通常知識者將理解到，可以在不偏離本發明之精神下使用各種修改、替代結構以及均等物。此外，並未描述數個習知的製程及元件，以避免不必要地混淆本技術。因此，不應將以上描述視為限制本技術之範圍。
當提供數值的範圍時，應瞭解到，除非內文以其他方式清楚指明，否則在該範圍的上限與下限之間、每個到下限單位的最小部分之中間值亦為具體揭示的。在陳述範圍中的任何陳述值或中間值與該陳述範圍中的任何其他陳述值或中間值之間的每個較小範圍亦被涵括。該等較小範圍的上限與下限可獨立地被包括或排除於該範圍中，而且不論是該等較小範圍包括任一限值、不包括二限值或是包括二限值，該等較小範圍中的每個範圍亦被涵括於本技術中，取決於該陳述範圍中任何經具體排除的限值。當該陳述範圍包括該等限值中之一者或二者時，排除該等包括的限值中之任一者或二者的範圍亦被包括。
除非內文以其他方式清楚指明，否則本文中與所附申請專利範圍中使用的單數形「一」及「該」包括複數的指 示對象。因此，舉例來說，提及「一操作」係包括複數個該種操作，而提及「該板材」係包括提及一或更多個板材及其為本技術領域中具有通常知識者所習知的均等物，以此類推。
同樣地，當用於本說明書中及以下申請專利範圍中時，字眼「包含」、「含有」及「包括」意欲指明陳述的特徵、整數、元件或操作之存在，但該等字眼並不排除一或更多個其他的特徵、整數、元件、操作、動作或基團的存在或加入。

Claims (15)

  1. 一種蝕刻一圖案化基板的方法，該方法包含以下步驟：使一含氧前驅物流入與一基板處理區域流體耦接的一第一遠端電漿區域，同時在該第一遠端電漿區域中形成一電漿，以產生含氧電漿流出物；使一含氟前驅物流入串聯地流體耦接在該第一遠端電漿區域與該基板處理區域之間的一第二遠端電漿區域，同時在該第二遠端電漿區域中形成一電漿，以產生含氟電漿流出物，其中該含氟前驅物繞過該第一遠端電漿區域；使該含氧電漿流出物在該第二遠端電漿區域中的該電漿的形成期間流入該第二遠端電漿區域，以和該含氟電漿流出物混合；將該含氧電漿流出物與該含氟電漿流出物從該第二遠端電漿區域一起流入該處理區域；以及使用該含氧和含氟電漿流出物蝕刻位於該基板處理區域中的一圖案化基板。
  2. 如請求項1所述之方法，其中至少一另外的前驅物與該含氧前驅物或該含氟前驅物中之一或兩者一起流入，而且該另外的前驅物係選自於由氦、氬、氮及分子氫(H2)所組成之群組。
  3. 如請求項1所述之方法，其中該含氟前驅物包含一選自於由原子氟、雙原子氟、三氟化氮、四氟化碳、氟化氫及二氟化氙所組成之群組的前驅物。
  4. 如請求項3所述之方法，其中該含氟前驅物包含三氟化氮，以及其中該含氟電漿流出物基本上係由NF*和NF2*物種所組成。
  5. 如請求項1所述之方法，其中該含氧前驅物包含一選自於由分子氧、臭氧、一氧化二氮、一氧化氮及二氧化氮所組成之群組的前驅物。
  6. 如請求項1所述之方法，其中該第二遠端電漿區域設以產生一電容耦合電漿。
  7. 如請求項6所述之方法，其中該第二遠端電漿區域中的該電漿係操作於一低於或約200瓦的功率電平。
  8. 如請求項1所述之方法，其中在蝕刻製程的過程中該基板溫度被保持在或低於約50℃。
  9. 如請求項1所述之方法，其中該第一遠端電漿區域包含耦接一基板處理腔室蓋組件的一遠端電漿系統(RPS)單元。
  10. 如請求項1所述之方法，其中將該含氧電漿流出物與該含氟電漿流出物流入該處理區域的操作包含將該等電漿流出物兩者流過將各遠端電漿區域與該基板處理區域分開的一噴灑頭。
  11. 一種蝕刻一圖案化基板的方法，該方法包含以下步驟：使一含氧前驅物流入一第一遠端電漿區域，該第一遠端電漿區域與一基板處理室的一第二遠端電漿區域流體耦接，同時在該第一遠端電漿區域中形成一電漿，以產生含氧電漿流出物；將該含氧電漿流出物輸入該第二遠端電漿區域；使一含氟前驅物流入該第二遠端電漿區域，同時在該第二遠端電漿區域中形成一電漿，以產生含氟電漿流出物，其中該第二遠端電漿區域與一基板處理區域流體耦接，及其中該第二遠端電漿區域在該第一遠端電漿區域與該基板處理區域之間流體耦接，及其中該含氟前驅物繞過該第一遠端電漿區域；將該含氧電漿流出物和含氟電漿流出物從該第二遠端電漿區域同時輸入該基板處理區域；以及使用該含氧和含氟電漿流出物蝕刻位於該基板處理區域中的一圖案化基板。
  12. 如請求項11所述之方法，其中該第二遠端電漿區域中的該電漿為一電容耦合電漿。
  13. 如請求項12所述之方法，其中該第二遠端電漿區域中的該電漿係操作於一低於或約200瓦的功率電平。
  14. 如請求項11所述之方法，其中該第一遠端電漿區域係操作於一第一電漿功率，並且該第二遠端電漿區域係操作於一第二電漿功率，以及其中該第一電漿功率和該第二電漿功率彼此不相同。
  15. 一種蝕刻一圖案化基板的方法，該方法包含以下步驟：使一含氧前驅物流入一第一遠端電漿區域，該第一遠端電漿區域與一基板處理室的一第二遠端電漿區域流體耦接，同時在該第一遠端電漿區域中形成一電漿，以產生含氧電漿流出物；將該含氧電漿流出物輸入該第二遠端電漿區域；在將該含氧電漿流出物輸入該第二遠端電漿區域期間，使三氟化氮繞過該第一遠端電漿區域經由一入口流入該第二遠端電漿區域，同時在該第二遠端電漿區域中以一低於或約200瓦的功率電平形成一電容耦合電漿，以產生NF*和NF2*電漿流出物，其中該第二遠端電漿區域與一基板處理區域流體耦接；將該含氧電漿流出物及NF*和NF2*電漿流出物從該第二遠端電漿區域輸入該基板處理區域；以及使用該含氧和NF*與NF2*電漿流出物蝕刻位於該基板處理區域中的一圖案化基板，其中在蝕刻過程中該基板處理區域大致上無電漿，及其中該圖案化基板具有曝露的氧化矽和氮化矽區域。
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