TWI530995B - 用於蝕刻sin膜的方法 - Google Patents
用於蝕刻sin膜的方法 Download PDFInfo
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- TWI530995B TWI530995B TW101108501A TW101108501A TWI530995B TW I530995 B TWI530995 B TW I530995B TW 101108501 A TW101108501 A TW 101108501A TW 101108501 A TW101108501 A TW 101108501A TW I530995 B TWI530995 B TW I530995B
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- Prior art keywords
- plasma
- gas
- region
- substrate
- fluorine
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- 238000000034 method Methods 0.000 title claims description 76
- 239000007789 gas Substances 0.000 claims description 256
- 150000002500 ions Chemical class 0.000 claims description 126
- 230000001629 suppression Effects 0.000 claims description 103
- 239000000758 substrate Substances 0.000 claims description 90
- 238000006243 chemical reaction Methods 0.000 claims description 62
- 230000008569 process Effects 0.000 claims description 46
- 229910052731 fluorine Inorganic materials 0.000 claims description 38
- 239000011737 fluorine Substances 0.000 claims description 37
- -1 fluoride ions Chemical class 0.000 claims description 27
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 26
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 22
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 9
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 238000001914 filtration Methods 0.000 claims description 3
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 3
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 claims 1
- 229910000420 cerium oxide Inorganic materials 0.000 claims 1
- 230000005764 inhibitory process Effects 0.000 claims 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 239000002002 slurry Substances 0.000 claims 1
- 210000002381 plasma Anatomy 0.000 description 189
- 230000005284 excitation Effects 0.000 description 29
- 239000000463 material Substances 0.000 description 24
- 239000002243 precursor Substances 0.000 description 23
- 150000003254 radicals Chemical class 0.000 description 22
- 239000000203 mixture Substances 0.000 description 20
- 230000007935 neutral effect Effects 0.000 description 19
- 238000000151 deposition Methods 0.000 description 13
- 230000008021 deposition Effects 0.000 description 13
- 230000007704 transition Effects 0.000 description 11
- 230000000977 initiatory effect Effects 0.000 description 9
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000012530 fluid Substances 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 230000009969 flowable effect Effects 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 239000000615 nonconductor Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000036470 plasma concentration Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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- H01—ELECTRIC ELEMENTS
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/311—Etching the insulating layers by chemical or physical means
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Description
本發明之美國對應案根據35 U.S.C.§ 119(e)主張西元2011年3月14日提出申請的美國臨時申請案第61/452,575號的優先權,此案件的內容為了所有目的在此藉由參照而整體地被併入到本文。
本發明之美國對應案亦和西元2011年4月18日提出申請的美國非臨時專利申請案第13/088,930號相關、西元2011年10月3日提出申請的美國非臨時專利申請案第13/251,663號相關及同時提出申請的美國非臨時專利申請案(代理人卷號A15599/T102910,客戶卷號015599 USA/DSM/PMD)相關,此等案件的內容分別為了所有目的在此藉由參照而整體地被併入到本文。
本發明關於用以蝕刻SIN膜的方法。
藉由在基材表面上產生複雜圖案化材料層的製程是可以製造積體電路的。在基材上產生圖案化材料需要受控的用於移除暴露材料的方法。化學蝕刻用在各種目的,包括將光阻劑中的圖案轉移到下方層內、將層予以薄化或增加已經存在於表面上的特徵結構的橫向尺寸。時
常,期望具有能蝕刻一種材料比蝕刻另一材料更快的蝕刻製程。這樣的蝕刻製程被稱為對於第一材料具有選擇性。由於材料、電路與製程的多樣性,已經以朝向各種材料的選擇性來發展蝕刻製程。
用以製造半導體積體電路的電漿沉積與蝕刻製程已經廣泛使用長達數十年。這些製程通常涉及從氣體的電漿的形成,其中該等氣體被暴露於處理腔室內的足以將氣體予以離子化的功率的電場。所需要以形成這些電漿的溫度會比所需要以將同樣的氣體予以熱離子化的溫度更低得多。因此,電漿產生製程可用以在比僅藉由加熱氣體而行的明顯更低的腔室處理溫度下產生反應性自由基與離子物種。此容許電漿能從基材表面沉積與/或蝕刻材料,而不必將基材溫度升高到高於會熔化、分解或損壞基材上的材料的閥值。
示範性電漿沉積製程包括位在基材晶圓的暴露表面上的介電材料(諸如氧化矽)的電漿增強化學氣相沉積(PECVD)。傳統的PECVD涉及處理腔室中的氣體與/或沉積前驅物的混合及從氣體引發電漿而產生會在基材上反應且沉積材料的反應性物種。電漿通常靠近基材的暴露表面,以促進有效的反應產物的沉積。
相似地,電漿蝕刻製程包括以下步驟:使基材的選擇部分暴露於電漿引發蝕刻物種,電漿引發蝕刻物種會從基材化學地反應與/或物理地濺射材料。可藉由調整蝕刻劑氣體、電漿激發能量與基材和充電電漿物種之間的電
偏壓及其他參數來控制被電漿蝕刻的材料的移除速率、選擇性與方向。一些電漿技術(諸如高密度電漿化學氣相沉積(HDP-CVD))倚賴同時的電漿蝕刻與沉積,以在基材上沉積膜。
儘管電漿環境比高溫沉積環境大體上更不具有對於基材之破壞性,但電漿環境仍產生製造挑戰。對於會過度蝕刻(over-etch)淺溝渠與間隙的賦能電漿而言,蝕刻精確性會是問題。電漿中的賦能物種(特別是離子化物種)會在被沉積的材料中造成不希望的反應,此會不利地影響材料的效能。因此,需要能對電漿成分提供更精確控制的系統與方法,其中該等電漿成分在製造期間和基材晶圓接觸。
描述系統與方法,以用於電漿與基材晶圓的表面之間的環境的改善控制,其中該基材晶圓被暴露於電漿與/或電漿的流出物。可至少部分地藉由設置在電漿與基材之間的離子抑制構件來實現此改善控制,該離子抑制構件可減少或消除抵達基材的多個被離子充電的物種。調整抵達基材表面的離子物種的濃度可容許在基材上的電漿輔助蝕刻與/或沉積的期間的蝕刻速率、蝕刻選擇性與沉積化學作用(及其他參數)的更精確控制。
在實施例中,提供一種從包含氮化矽層與氧化矽層的
基材選擇性地蝕刻氮化矽的方法。該方法包括以下步驟:使含氟氣體流動到基材處理腔室的電漿產生區域內;及施加能量到該含氟氣體,以在該電漿產生區域中產生電漿。該電漿包含氟自由基與氟離子。該方法亦包括以下步驟:過濾該電漿,以提供具有比氟離子更高濃度的氟自由基的反應性氣體;及使該反應性氣體流動到該基材處理腔室的氣體反應區域內。該方法亦包括以下步驟:使該基材暴露於該基材處理腔室的該氣體反應區域中的該反應性氣體。相較於該反應性氣體蝕刻該氧化矽層而言,該反應性氣體係以更高的蝕刻速率來蝕刻該氮化矽層。
在另一實施例中,提供一種提供比氧化矽蝕刻速率更高的氮化矽蝕刻速率的蝕刻製程。該製程包括以下步驟:從含氟氣體產生電漿。該電漿包含氟自由基與氟離子。該製程亦包括以下步驟:從該電漿移除一部分的氟離子,以提供具有比氟離子更高濃度的氟自由基的反應性氣體;及使包含氮化矽層與氧化矽層的基材暴露於該反應性氣體。相較於該反應性氣體蝕刻該氧化矽層而言,該反應性氣體係以更高的蝕刻速率來蝕刻該氮化矽層。
額外的實施例與特徵部分地被揭露在以下的發明說明中且對於熟習此技藝的人士在審閱本說明書後是明顯的或可藉由實施本發明而被瞭解。可藉由本說明書中所描述的設施手段、組合與方法來知悉且獲得本發明的特徵
與優點。
描述系統與方法,以用於半導體處理腔室內的電漿的產生與控制。電漿可源自處理腔室內、遠端電漿單元中的處理腔室外或上述兩者。在腔室內,電漿被包含住且電漿和基材晶圓分離,而具有位在電漿與基材晶圓之間的離子抑制構件的輔助。在一些情況中,此離子抑制構件亦可作用成作為電漿產生單元(例如電極)、氣體/前驅物分佈系統(例如噴頭)與/或處理系統的另一部件的一部分。在額外的情況中,離子抑制構件可主要作用成用以界定電漿產生區域與氣體反應區域之間的分隔,其中該氣體反應區域係蝕刻與/或沉積基材晶圓的暴露表面上的材料。
離子抑制構件係作用成用以減少或消除從電漿產生區域行進到基材的離子充電物種。未充電的中性與自由基物種可通過離子抑制件中的開口而在基材處反應。應注意,環繞基材的反應區域中的離子充電物種的完全消除並非總是期望的目標。在許多情況中,離子物種需要抵達基材,以為了執行蝕刻與/或沉積製程。在這些情況中,離子抑制件有助於控制反應區域中的離子物種的濃度於對製程有幫助的位準。
示範性處理系統組態
示範性處理系統組態包括設置在處理腔室內的離子抑制件,以控制抵達基材的電漿激發物種的類型與量。在一些實施例中,離子抑制件單元可以是穿孔板,穿孔板亦可作為電漿產生單元的電極。在額外的實施例中,離子抑制件可以是能將氣體與激發物種分佈到和基材接觸的反應區域的噴頭。在又更多實施例中,可藉由穿孔板離子抑制件與噴頭來實現離子抑制,其中電漿激發物種通過穿孔板離子抑制件與噴頭兩者而抵達反應區域。
第1和2圖分別顯示處理系統的簡化剖視圖與透視圖,該處理系統包括離子抑制件110與噴頭104,離子抑制件110作為電容耦合電漿(capacitively coupled plasma,CCP)單元102的一部分,噴頭104亦可對離子抑制作出貢獻。處理系統亦能可選地包括位在處理腔室100外的部件,諸如流體供應系統114。處理系統100可保持不同於周圍壓力的內部壓力。例如,處理腔室內的壓力可從約1 mTorr到約100 Torr。
CCP單元102可作用成在處理腔室100內產生電漿。CCP單元102的部件可包括蓋或熱電極106與離子抑制構件110(在此亦稱為離子抑制件)。在一些實施例中,蓋106與離子抑制件110是導電電極,該等導電電極可相對於彼此被電偏壓以產生強到足以將該等電極之間的氣體予以離子化成電漿的電場。電絕緣體108可分離蓋106與離子抑制件110電極,以避免該蓋106電極及該離子抑制件110電極在電漿被產生時會短路。蓋106、絕緣
體108與離子抑制件110的電漿暴露表面可在CCP單元102中界定電漿激發區域112。
電漿產生氣體可從氣體供應系統114經由氣體入口116行進到電漿激發區域112內。電漿產生氣體可用以在激發區域112中引發電漿,或可維持已經被形成的電漿。在一些實施例中,電漿產生氣體在經由入口116向下行進到CCP單元102之前,電漿產生氣體可在設置於處理腔室100外的遠端電漿系統(未示出)中已經至少部分地被轉變成電漿激發物種。當電漿激發物種抵達電漿激發區域112時,該等電漿激發物種可在CCP單元102中進一步被激發,或通過電漿激發區域而不進行進一步激發。在一些運作中,由CCP單元102所提供的增加的激發的程度可隨著時間改變,取決於基材處理順序與/或條件。
電漿產生氣體與/或電漿激發物種可通過蓋106中的複數個孔洞(未示出),以為了能更均勻地輸送到電漿激發區域112內。示範性組態包括使入口116開放到藉由蓋106和電漿激發區域112分隔的氣體供應區域120內,以致氣體/物種流動通過蓋106中的孔洞到電漿激發區域112內。可選擇結構與運作特徵,以避免明顯的從電漿激發區域112回流到供應區域120、入口116與流體供應系統114內的電漿回流。結構特徵可包括蓋106中的孔洞的尺寸和剖面幾何形態的選擇,其中該等孔洞的尺寸和剖面幾何形態會將回流電漿予以停止(deactivate),如
下文參照第7A和7B圖所描述。運作特徵可包括維持氣體供應區域120與電漿激發區域112之間的壓力差,其中該壓力差可維持電漿通過離子抑制件110的單一方向流動。
如上所述,蓋106與離子抑制件110可分別作用成第一電極與第二電極,因此蓋106與/或離子抑制件110可接收電荷。在這些組態中,電功率(例如RF功率)可被施加到蓋106、離子抑制件110或上述兩者。例如,電功率可被施加到蓋106,而離子抑制件110被接地。基材處理系統可包括RF產生器140,RF產生器140提供電功率到蓋106與/或離子抑制件110。被充電的蓋106可促進電漿在電漿激發區域112內的均勻分佈(即減少局部電漿)。為了使電漿在電漿激發區域112中的形成成為可能,絕緣體108可將蓋106與離子抑制件110予以電絕緣。絕緣體108可從陶瓷製成且可具有高崩潰電壓以避免發出火花(sparking)。CCP單元102可更包括冷卻單元(未示出),冷卻單元包括一或更多個冷卻流體通道以利用循環冷卻劑(例如水)來冷卻被暴露於電漿的表面。
離子抑制件110可包括複數個孔洞122,該等孔洞122能抑制被離子充電的物種離開電漿激發區域112的遷移,同時容許未被充電的中性或自由基物種能通過離子抑制件110到被引發的氣體輸送區域124內。這些未被充電的物種可包括隨同較不具反應性的載體氣體被傳送通過孔洞122的高反應性物種。如上所述,離子物種通
過孔洞122的遷移可被減少,並且在一些情況中可完全地被抑制。控制離子物種通過離子抑制件110的量係提供增加的和下方晶圓基材接觸的氣體混合物的控制,此進而可增加氣體混合物的沉積與/或蝕刻特徵的控制。例如,氣體混合物的離子濃度的調整可顯著地改變該氣體混合物的蝕刻選擇性(例如SiNx:SiOx蝕刻比例、金屬:SiOx蝕刻比例、金屬:SiNx蝕刻比例、多晶矽:SiOx蝕刻比例等)。此亦可改變被沉積的介電材料的共形對可流動(conformal-to-flowable)的平衡。
該複數個孔洞122可設以控制被引發的氣體(即離子、自由基與/或中性物種)通過離子抑制件110的通過。例如,孔洞的深寬比(即孔洞直徑對長度)與/或孔洞的幾何形態可經控制,以致可減少在被引發的氣體中的被離子充電的物種通過離子抑制件110的流量。離子抑制件110中的孔洞可包括面對電漿激發區域112的錐狀化部分及面對噴頭104的圓柱形部分。圓柱形部分的形狀和尺寸可經設計,以控制離子物種通過到噴頭104的流量。可調整的電偏壓亦可被施加到離子抑制件110作為控制離子物種通過抑制件的流量的額外方式。
噴頭104設置在CCP單元102的離子抑制件110與氣體反應區域130(即氣體引發區域)之間,其中該氣體反應區域130和可被裝設在台座150上的基材接觸。氣體與電漿激發物種可通過離子抑制件110到被引發的氣體輸送區域124內,其中該氣體輸送區域124被界定在離子
抑制件110與噴頭104之間。這些氣體與物種的一部分可進一步通過噴頭104到和基材接觸的氣體反應區域130內。
噴頭可以是雙區域噴頭,該雙區域噴頭具有第一組通道126與第二組通道,第一組通道126用以容許電漿激發物種的通過,第二組通道係輸送第二氣體/前驅物混合物到氣體反應/引發區域130內。此兩組通道可避免電漿激發物種與第二氣體/前驅物混合物結合,直到該等電漿激發物種及該第二氣體/前驅物混合物抵達氣體反應區域130。在一些實施例中,離子抑制件110中的一或更多個孔洞122可和噴頭104中的一或更多個通道126對準,以容許至少一些電漿激發物種能通過孔洞122和通道126而不會改變該等至少一些電漿激發物種的流動方向。在額外的實施例中,第二組通道可在面對氣體反應區域130的開口處具有環形形狀,並且這些環形開口可繞著第一組通道126的圓形開口而同心地對準。
噴頭104中的第二組通道可流體地耦接到源氣體/前驅物混合物(未示出),其中該源氣體/前驅物混合物係經選擇用於待執行的製程。例如,當處理系統設以執行介電材料(諸如二氧化矽(SiOx))的沉積時,氣體/前驅物混合物可包括含矽氣體或前驅物(諸如矽烷、二矽烷、TSA、DSA、TEOS、OMCTS、TMDSO及其他含矽材料)。此混合物可在氣體反應區域130中和氧化氣體混合物反應,其中該氧化氣體混合物可包括電漿激發物種(諸如被電
漿產生的自由基氧(O)、被引發的分子氧(O2)與臭氧(O3)及其他物種)。電漿激發物種中過量的離子可被減少(這是因為物種移動通過離子抑制件110中的孔洞),且可進一步被減少(這是因為物種移動通過噴頭104中的通道126)。在另一實例中,當處理系統設以在基材表面上執行蝕刻時,源氣體/前驅物混合物可包括蝕刻劑(諸如氧化劑)、鹵素、水蒸氣與/或載體氣體,該等蝕刻劑、鹵素、水蒸氣與/或載體氣體在氣體反應區域130中和從噴頭104中的第一組通道被分佈的電漿激發物種混合。
處理系統可更包括功率供應器140,功率供應器140電耦接到CCP單元102以提供電功率到蓋106與/或離子抑制件110而在電漿激發區域112中產生電漿。功率供應器可設以輸送可調整的功率量到CCP單元102,取決於所執行的製程。例如,在沉積製程中,可調整被輸送到CCP單元102的功率,以設定沉積層的共形性。被沉積的介電膜通常在較低的電漿功率下是較可流動的,並且當電漿功率被增加時能從可流動的改變到共形的。例如,當電漿功率從約1000瓦被降低到約100瓦或更低(例如約900、800、700、600或500瓦或更小)時,被維持在電漿激發區域112中的含氬電漿可產生較可流動的氧化矽層,並且當電漿功率從約1000瓦或更大(例如約1000、1100、1200、1300、1400、1500、1600、1700瓦或更大)被增加時,被維持在電漿激發區域112中的含氬電漿可產生較共形的層。當電漿功率從低增加到高,從
可流動到共形的沉積膜的轉變可相當平順且連續,或經過相當分離的閥值。可調整電漿功率(單獨地調整,或除了其他沉積參數以外而調整),以選擇沉積膜的共形與可流動性質之間的平衡。
處理系統可又更包括台座150,台座150可運作以支撐且移動基材(例如晶圓基材)。台座150與噴頭104之間的距離有助於界定氣體反應區域130。台座在處理腔室100內是可垂直地或軸向地調整,以增加或減少氣體反應區域130且藉由將晶圓基材相對於被通過噴頭104的氣體重新設置而進行晶圓基材的沉積或蝕刻。台座150可具有熱交換通道,熱交換流體係流動通過熱交換通道以控制晶圓基材的溫度。熱交換流體的循環容許基材溫度能被維持在相對低的溫度(例如約-20℃到約90℃)。示範性熱交換流體包括乙二醇與水。
台座150亦可設以具有加熱構件(諸如電阻式加熱構件)以將基材維持在加熱溫度(例如約90℃到約1100℃)。示範性加熱構件可包括被嵌設在基材支撐盤中的單迴路加熱器構件,該單迴路加熱器構件以平行同心圓的形式形成有兩或更多個完全迴轉。加熱器構件的外部可行進成鄰近支撐盤的周邊,而內部可行進在具有較小半徑的同心圓的路徑上。加熱器構件的配線可通過台座的桿。
第3圖顯示通過處理系統的一對氣體混合物的氣體流動路徑的簡化示意圖,其中該處理系統包括離子抑制件板與噴頭兩者。在方塊305,第一氣體(諸如電漿產生氣
體混合物)經由氣體入口被供應到處理腔室。第一氣體可包括以下氣體的一或更多個氣體:CF4、NH3、NF3、Ar、He、H2O、H2、O2等。在方塊310,在處理腔室內,第一氣體可透過電漿放電被激發而形成一或更多個電漿流出物。或者(或除了原位電漿產生以外),耦接到處理腔室的遠端電漿系統(RPS)可用以產生異位電漿(ex-situ plasma),異位電漿的電漿激發產物被引進到處理腔室內。RPS電漿激發產物可包括被離子充電的電漿物種及中性和自由基物種。
無論電漿流出物是由原位電漿單元、RPS單元或上述兩者產生,在方塊315,該等電漿流出物可通過處理腔室中的離子抑制件。當被電漿引發的第一氣體行進到處理腔室中的氣體反應區域時,離子抑制件可阻擋與/或控制離子物種的通過,同時容許自由基與/或中性物種的通過。在方塊320,第二氣體可被引進到處理腔室內。如上所述,第二氣體的內容物取決於所執行的製程。例如,第二氣體可包括用於沉積製程的沉積化合物(例如含矽化合物)及用於蝕刻製程的蝕刻劑。可避免第一與第二氣體之間的接觸和反應,直到這些氣體抵達處理腔室的氣體反應區域。
避免第一與第二氣體在氣體反應區域之前起交互作用的一種方式是使該等第一與第二氣體流動通過雙區域噴頭(dual-zone showerhead,DZSH)中的不同通道。方塊330顯示被引發的第一氣體與第二氣體通過DZSH 33,DZSH
33具有第一複數個通道,第一複數個通道容許被引發的第一氣體能通過噴頭而不會和通過第二複數個通道的第二氣體起交互作用。在方塊335,在離開DZSH之後,第一與第二氣體可在處理腔室的氣體反應區域中混合在一起。取決於所執行的製程,結合的氣體可反應以在基材的暴露表面上沉積材料、從基材蝕刻材料或上述兩者。
現在參照第4圖,第4圖顯示處理系統400的簡化剖視圖,其中該處理系統400具有亦作為離子抑制構件的噴頭428。在所顯示的組態中,用於電漿產生的第一氣體源402係流體地耦接到可選的RPS單元404,其中第一電漿可在RPS單元404處被產生,並且電漿流出物可在RPS單元404處經由氣體入口408被傳送到處理腔室406內。在處理腔室406內,氣體可通過氣體分佈板412中的通孔410到被界定在板412與噴頭428之間的氣體區域414內。在一些實施例中,此區域414可以是電漿激發/引發區域,其中氣體分佈板412與噴頭428作為第一與第二電極以進一步激發氣體與/或產生第一電漿。氣體分佈板412中的通孔410可依通孔410之尺寸與幾何形態被建構成將回流電漿予以停止。板412與噴頭428可和RF功率產生器422耦接,RF功率產生器422供應電荷到板412與噴頭428以激發氣體與/或產生電漿。在一個實施例中,噴頭428被接地,而電荷被施加到板412。
氣體區域414中的激發氣體或引發氣體可通過噴頭428到鄰近基材418的氣體反應區域416內,以從基材
的表面蝕刻材料與/或沉積材料在基材的表面上。噴頭428可以是DZSH,DZSH容許激發氣體能從氣體區域414通過到氣體反應區域416內,同時亦容許第二氣體(即前驅物氣體/混合物)能從外部源(未示出)經由第二氣體入口(未示出)流動到氣體反應區域416內。DZSH可避免引發/激發氣體和第二氣體混合,直到氣體流動到氣體反應區域416內。
激發氣體可流動通過DZSH中的複數個孔洞424,該等孔洞424可依孔洞424之尺寸與幾何形態被建構成控制或避免電漿(即被離子充電的物種)的通過,同時容許引發/激發氣體(即反應性自由基或未被充電的中性物種)的通過。第7A圖提供可被用在DZSH中的孔洞組態的示範性實施例。除了孔洞424以外,DZSH可包括複數個通道426,第二氣體流動通過通道426。第二氣體(前驅物氣體)可經由一或更多個穿孔(未示出)離開噴頭428,該等穿孔設置成鄰近該等孔洞424。DZSH可作為第二氣體輸送系統與離子抑制構件兩者。
如上所述,混合氣體可沉積材料在基材418的表面上與/或從基材418的表面蝕刻材料,其中該基材418可設置在盤420上。盤420可在處理腔室406內垂直地移動。基材418在處理腔室406內的處理可能受到孔洞424的組態、氣體區域414內的壓力與/或基材418在處理腔室內的位置影響。又,孔洞424的組態與/或氣體區域414內的壓力可控制被容許通過到氣體反應區域416內的離
子物種(電漿)的濃度。除了改變蝕刻選擇性以外,氣體混合物的濃度可改變被沉積的介電材料的共形對可流動(conformal-to-flowable)的平衡。
現在參照第5圖,第5圖顯示另一處理系統500的簡化剖視圖,其中該另一處理系統500具有作為離子抑制構件的板512(即離子抑制件板)。在所顯示的組態中,第一氣體源502係流體地耦接到RPS單元504,其中第一電漿可在RPS單元504處被產生,並且電漿流出物可在RPS單元504處經由氣體入口508被傳送到處理腔室506內。電漿流出物可被傳送到被界定在離子抑制件板512與氣體入口508之間的氣體區域514。在氣體區域514內,氣體可通過離子抑制件512中的通孔510到被界定在離子抑制件512與基材518之間的氣體反應/引發區域516內。基材518可如上所述被支撐在盤520上,以致基材可在處理腔室506內移動。
如上所述,該等通孔510可依通孔510之尺寸與幾何形態被建構成使得可避免與/或控制被離子充電的物種(即電漿)的通過,同時容許未被充電的中性或自由基物種(即引發氣體)的通過。可藉由改變在氣體區域514內的電漿的壓力來控制離子物種的通過。可藉由控制被輸送通過氣體入口508的氣體的量來控制氣體區域514中的壓力。前驅物氣體(即第二氣體)可在一或更多個第二氣體入口522處被引進到處理腔室506內,其中該等第二氣體入口522垂直地設置在離子抑制件512下方或垂
直地設置成平行離子抑制件512。第二氣體入口522可在處理腔室506壁中包括一或更多個穿孔、管等(未示出)且可更包括一或更多個氣體分佈通道(未示出)以將前驅物氣體輸送到該等穿孔、管等。在一個實施例中,離子抑制件512包括一或更多個第二氣體入口,前驅物氣體流動通過該等第二氣體入口。離子抑制件512的第二氣體入口可將前驅物氣體輸送到氣體反應區域516內。在這樣的實施例中,離子抑制件512係如上所述作用成離子抑制件與雙區域噴頭兩者。通過通孔510的引發氣體及被引進到處理腔室506中的前驅物氣體可在氣體反應區域516中被混合以用於蝕刻與/或沉積製程。
已經描述了處理腔室的示範性實施例,現在將焦點導向離子抑制件的示範性實施例,諸如氣體分佈板412和512及噴頭428。
示範性離子抑制件
第6A圖顯示根據本發明的實施例的離子抑制構件600(離子抑制件)的簡化透視圖。離子抑制構件600可相應於第4圖與/或第5圖的離子抑制件板。此透視圖顯示離子抑制構件或板600的頂部。離子抑制板600可具有大體上圓形的形狀且可包括複數個電漿流出物管道602,其中各個管道602包括一或更多個通孔,該等通孔能容許電漿流出物從第一區域(例如電漿區域)到第二區域(例如氣體反應區域或噴頭)的通過。在一個實施例中,管道602的通孔可被配置成形成一或更多個圓形圖
案,儘管其他組態是可行的。如上所述,通孔可依通孔之幾何形態或尺寸被建構成控制或避免離子物種的通過,同時容許未被充電的中性或自由基物種的通過。該等通孔可具有朝向離子抑制板600的頂表面的較大內徑及朝向離子抑制板的底表面的較小內徑。又,該等通孔可具有大體上圓柱形、圓錐形或任何上述組合的形狀。通孔的組態的示範性實施例被提供在第7A-B圖中。
該複數個管道可實質上均勻地被分佈在離子抑制板600的表面上,此可提供均勻的中性或自由基物種通過離子抑制板到第二區域內的通過。在一些實施例(諸如第5圖的實施例)中,處理腔室可僅包括離子抑制板600,而在其他實施例中,處理腔室可包括離子抑制板600與噴頭(諸如第6B圖的噴頭)兩者,或處理腔室可包括作為雙區域噴頭和離子抑制板兩者的單一板。
第6B圖顯示根據本發明的實施例的噴頭620的簡化仰視圖。噴頭620可相應於第4圖所示的噴頭。如上所述,噴頭620可垂直地設置成鄰近氣體反應區域或位在氣體反應區域上方。相似於離子抑制板600,噴頭620可具有大體上圓形的形狀且可包括複數個第一孔洞622與複數個第二孔洞624。該複數個第一孔洞622可容許電漿流出物通過噴頭620到氣體反應區域內,而該複數個第二孔洞624可容許前驅物氣體(諸如矽前驅物)、蝕刻劑等通過到氣體反應區域內。
該複數個第一孔洞622可以是從噴頭620的頂表面延
伸通過噴頭的通孔。在一個實施例中,該複數個第一孔洞622的各者可具有朝向噴頭620的頂表面的較小內徑(ID)及朝向底表面的較大ID。此外,該複數個第一孔洞622的底部邊緣可被去角(chamfer)626,以有助於當電漿流出物離開噴頭時能均勻地分佈電漿流出物在氣體反應區域中且藉此促進電漿流出物和前驅物氣體的均勻混合。該等第一孔洞622的較小ID可介於約0.5 mm與約20 mm之間。在一個實施例中,較小ID可介於約1 mm與6 mm之間。該等第一孔洞622的剖面形狀可以是大體上圓柱形、圓錐形或任何上述的組合。又,當處理腔室中使用離子抑制構件600與噴頭620兩者時,該等第一孔洞622可和該等管道602的該等通孔同心地對準。同心對準可促進處理腔室中引發氣體通過離子抑制構件600與噴頭620兩者的通過。
在另一實施例中,該複數個第一孔洞622可以是從噴頭620的頂表面延伸通過噴頭的通孔,其中各個第一孔洞622具有朝向噴頭的頂表面的較大ID及朝向噴頭的底表面的較小ID。又,該等第一孔洞622可包括在較大與較小ID之間過渡的錐狀化區域。這樣的組態可避免或調節電漿通過孔洞的通過,同時容許引發氣體的通過。這樣的實施例可被用來取代離子抑制構件600,或添加到離子抑制構件600。這樣的通孔的示範性實施例被提供在第7A圖中。
該複數個第一孔洞622的數量可介於約60個與約2000
個之間。該複數個第一孔洞622亦可具有各種形狀,但大體上是圓形。在處理腔室包括離子抑制板600與噴頭620兩者的實施例中,該複數個第一孔洞622可和該等管道實質上對準,以促進電漿流出物通過離子抑制板與噴頭的通過。
該複數個第二孔洞624可從噴頭620的底表面部分地延伸通過噴頭。該複數個第二孔洞可耦接到或連接到複數個通道(未示出),該複數個通道係將前驅物氣體(例如沉積化合物、蝕刻劑等)從外部氣體源(未示出)輸送到該等第二孔洞624。該等第二孔洞可包括在噴頭620的底表面處的較小ID及在噴頭的內部中的較大ID。該等第二孔洞624的數量在不同實施例中可介於約100個與約5000個之間或介於約500個與約2000個之間。該等第二孔洞的較小ID的直徑(即孔洞在底表面處的直徑)可介於約0.1 mm與約2 mm之間。該等第二孔洞624可具有大體上圓形的形狀且可同樣地具有圓柱形、圓錐形或任何上述組合的形狀。該等第一與第二孔洞可皆均勻地被分佈在噴頭620的底表面上,以促進電漿流出物與前驅物氣體的均勻混合。
參照第7A圖,第7圖顯示通孔的示範性組態。所示出的通孔大體上包括朝向孔洞的上端的大內徑(ID)區域及朝向孔洞的底端或下端的較小ID區域。較小ID可介於約0.2 mm與約5 mm之間。又,孔洞的深寬比(即較小ID對孔洞長度)可以是約1到20。這樣的組態可實質上
阻擋與/或控制電漿流出物的離子物種的通過,同時容許自由基或中性物種的通過。例如,改變深寬比可調節被容許通過通孔的電漿的量。可藉由改變電漿在位於通孔正上方的區域內的壓力來進一步調節電漿通過。
現在參照特定組態,通孔702可包括在孔洞的上端處的大ID區域704及在孔洞的下端處的小ID區域706,而具有介於大ID與小ID之間的階梯化邊緣。通孔710可包括在上端處的大ID區域712及在孔洞的下端處的大ID區域716,而具有介於大ID區域712與大ID區域716之間的小ID區域714。大與小ID區域之間的過渡可被階梯化或被鈍化,以提供該等區域之間的突然過渡。
通孔720可包括在孔洞的上端處的大ID區域722及在孔洞的下端處的小ID區域726,而具有在大與小ID區域之間以角度θ過渡的錐狀化區域724。小ID區域726的高度728可取決於孔洞的總高度727、錐狀化區域724的角度θ、大ID與小ID。在一個實施例中,錐狀化區域724包含介於約15°與約30°之間且較佳為約22°的角度;總高度727介於約4 mm與約8 mm之間且較佳為約6.35 mm;大ID介於約1 mm與約4 mm之間且較佳為約2.54 mm;小ID介於約0.2 mm與約1.2 mm之間且較佳為約0.89 mm,以致小ID區域726的高度728介於約1 mm與約3 mm之間且較佳為約2.1 mm。
通孔730可包括在孔洞的上端處的第一ID區域732、同心地對準於第一ID區域732且垂直地設置於第一ID
區域732下方的第二ID區域734與同心地對準於第二ID區域734且垂直地設置於第二ID區域734下方的第三ID區域736。第一ID區域732可包含大ID,第二ID區域734可包含小ID,且第三ID區域736可包含比第二ID區域734稍大的ID。第三ID區域736可延伸到孔洞的下端或可向外地被錐狀化到出口ID 737。第三ID區域736與出口ID 737之間的的錐體能以角度θ3而錐狀化,該角度θ3可介於約15°與約30°之間且較佳為約22°。第二ID區域734可包括以角度θ1從第一ID區域732過渡的去角邊緣,該角度θ1可介於約110°與約140°之間。相似地,第二ID區域734可包括以角度θ2過渡成第三ID區域736的去角邊緣,該角度θ2亦可介於約110°與約140°之間。在一個實施例中,第一ID區域732的大ID可介於約2.5 mm與約7 mm之間且較佳為約3.8 mm;第二ID區域734的小ID可介於約0.2 mm與約5 mm之間且較佳為約0.4 mm;第三ID區域736的稍大ID可介於約0.75 mm與約2 mm之間且較佳為約1.1 mm;及出口ID可介於約2.5 mm與約5 mm之間且較佳為約3.8 mm。
該等大ID區域與小ID區域之間的過渡(鈍化、階梯化、錐狀化等)可實質上阻擋離子物種通過孔洞的通過,同時容許自由基或中性物種的通過。例如,現在參照第7B圖,第7B圖顯示通孔720的放大圖,該通孔720包括介於大ID區域722與小ID區域726之間的過渡區域724。錐狀化區域724可實質上避免電漿725穿過通孔
720。例如,當電漿725穿過進入到通孔720內時,離子物種會藉由接觸錐狀化區域724的壁而停止(deactivate)或接地(ground out),藉此限制電漿通過通孔的通過且將電漿包含在通孔720上方的區域內。然而,自由基或中性物種可通過通孔720。因此,通孔720可過濾電漿725,而避免或控制不希望的物種的通過。在示範性實施例中,通孔的小ID區域726包含1 mm或更小的ID。為了維持顯著的自由基與/或中性物種穿過通孔的濃度,可控制小ID區域的長度與/或錐狀化角度。
除了避免電漿的通過以外,在此所述的通孔可用以調節電漿的通過,以致期望的電漿位準能被容許通過通孔。調節電漿流通過通孔的流動之步驟可包括以下步驟:增加在離子抑制件板上方的氣體區域中的電漿的壓力,使得期望的電漿比例能通過離子抑制件而不會停止或接地。
現在參照第8圖,第8圖顯示CCP單元800的簡化圖。更詳細地說,所顯示的CCP單元800包括頂板802與底板804,頂板802與底板804界定電漿被包含在其內的電漿產生區域810。如上所述,電漿可由RPS(未示出)產生且經由通孔806被輸送到電漿產生區域810。替代地或此外,可例如藉由利用頂板802與底板804作為耦接到功率產生單元(未示出)的第一與第二電極在CCP單元800中產生電漿。
頂板802可包括通孔806,該通孔806容許製程氣體
與/或電漿能被輸送到電漿產生區域810內,同時避免電漿通過頂板802的回流。通孔806可建構成相似於通孔730,而具有第一、第二和第三ID區域(分別是820、822和824),去角邊緣(828和829)介於鄰近的區域之間且錐狀化區域826在第三ID區域824與出口ID之間過渡。當電漿穿過進入到通孔806內時,介於第三ID區域824與出口ID之間的錐狀化區域826與/或介於第二和第三ID區域(分別是822和824)之間的去角邊緣可藉由將離子物種予以停止或接地而避免電漿的回流。
相似地,底板804可包括通孔808,通孔808容許自由基或中性物種能通過通孔,同時避免或控制離子物種的通過。通孔808可建構成相似於通孔720,而具有大ID區域830、小ID區域832與錐狀化區域834,其中該錐狀化區域834在大ID區域830與小ID區域832之間過渡。錐狀化區域834可如上所解釋藉由將離子物種予以停止或接地而避免電漿通過通孔808的流動,同時容許自由基或中性物種能通過通孔。
為了進一步避免電漿通過通孔806與/或808的通過,頂板802與/或底板804可接收電荷,以將電漿予以電偏壓且將電漿包含在電漿產生區域810內與/或調整通過底板的引發氣體中的離子濃度。在CCP單元800中使用頂板802與底板804,電漿可實質上被產生與/或被維持在電漿產生區域810中,同時自由基與中性物種可被輸送到氣體反應區域而和一或更多個前驅物氣體混合,以從
基材表面蝕刻材料或沉積材料在基材表面上。
示範性製程
根據本發明的一些實施例,如上所述的離子抑制件可用以提供用於蝕刻或沉積製程的自由基與/或中性物種。例如,在一個實施例中,離子抑制件用以提供氟自由基而選擇性地蝕刻氮化矽。使用氟自由基,可獲得高達約80:1或更大的氮化矽對氧化矽的蝕刻速率選擇性。這樣的製程的一種應用是在取代閘極製程中移除氮化矽。可選擇性地移除氮化矽閘極,而不會移除暴露的氧化矽區域(諸如閘極氧化物)。可以諸如金屬的閘極材料來取代氮化矽。
離子抑制件可用以提供具有比離子更高濃度的自由基的反應性氣體。由於電漿中大部分的被充電的微粒被離子抑制件過濾或移除,基材在蝕刻製程期間通常不被偏壓。相較於包括濺射和轟擊的傳統電漿蝕刻製程,這樣的使用自由基與其他中性物種的製程可減少電漿損壞。本發明的實施例相較於傳統濕式蝕刻製程亦是有利的,其中對於傳統濕式蝕刻製程而言,液體的表面張力會造成小特徵結構的彎曲和剝落。
第9圖是示出根據本發明實施例的從包含氮化矽層與氧化矽層的基材而選擇性地蝕刻氮化矽的示範性方法的簡化流程圖。此方法包括以下步驟:使含氟氣體流動到基材處理腔室的電漿產生區域內(902)。含氟氣體可包括HF、F2、NF3、CF4、CHF3、C2F6、C3F6、BrF3、ClF3、
SF6或諸如此類者。其他實施例可包括其他不含氟的含鹵素氣體,諸如Cl2、HBr、SiCl4與諸如此類者,以取代含氟氣體。在第9圖的示範性方法中,含氟氣體亦可包括一或更多個氧源,諸如O2、O3、N2O、NO或諸如此類者。使用氧可增加氮化矽的蝕刻速率,而對氧化矽的蝕刻速率具有最小的衝擊。含氟氣體亦可包括一或更多個惰性氣體,諸如H2、He、N2、Ar或諸如此類者。惰性氣體可用以改善電漿穩定性。不同氣體的流速與比例可用以控制蝕刻速率與蝕刻選擇性。在實施例中,含氟氣體包括流速介於約5 sccm與500 sccm之間的NF3、流速介於約0 sccm與5000 sccm之間的O2、流速介於約0 sccm與5000 sccm之間的He及流速介於約0 sccm與5000 sccm之間的Ar。此技術領域中具有一般技藝的人士可瞭解的是可使用其他氣體與/或流量,取決於許多因素(包括處理腔室組態、基材尺寸、被蝕刻的特徵結構的幾何形態與配置與諸如此類者)。
此方法亦包括以下步驟:施加能量到含氟氣體以在電漿產生區域中產生電漿(904)。如同此技術領域中具有一般技藝的人士所能瞭解者,電漿可包括許多被充電與中性的物種(包括自由基與離子)。可使用已知的技術(例如RF電容耦合、感應式耦合與諸如此類者)來產生電漿。在實施例中,使用在介於約15 W與5000 W之間的源功率與介於約0.2 Torr與30 Torr之間的壓力下的CCP單元來施加能量。CCP單元可設置在處理腔室的氣體反應
區域的遠處。例如,可藉由離子抑制件使CCP單元與電漿產生區域和氣體反應區域分離。
此方法亦包括以下步驟:過濾電漿,以提供具有比氟離子更高濃度的氟自由基的反應性氣體(906)。可使用設置在基材處理腔室的電漿產生區域與氣體反應區域之間的離子抑制件來過濾電漿。離子抑制件可包括複數個通道,該等通道容許氟自由基與中性物種在電漿產生區域與氣體反應區域之間的通過。離子抑制件可設以移除從電漿產生區域通過的離子的一些或全部。例如,在實施例中,可移除顯著部分的離子,以致反應性氣體實質上不含有離子。
此方法亦包括以下步驟:使反應性氣體流動到基材處理腔室的氣體反應區域內(908)。在實施例中,離子抑制件可設以作為噴頭,並且離開離子抑制件的反應性氣體可流動到鄰近基材的氣體反應區域內。或者,離開離子抑制件的反應性氣體可流動通過噴頭或另一氣體分佈器且進入到氣體反應區域內。
此方法亦包括以下步驟:使基材暴露於基材處理腔室的氣體反應區域中的反應性氣體(910)。在實施例中,基材的溫度可介於約-10℃與200℃之間,並且基材處理腔室中的壓力可介於約0.2 Torr與30 Torr之間。此技術領域中具有一般技藝的人士可瞭解的是可使用其他溫度與/或壓力,取決於許多因素,如上所解釋。相較於反應性氣體蝕刻氧化矽層而言,反應氣體係以更高的蝕刻速率
來蝕刻氮化矽層。
第10圖是示出根據本發明實施例而提供比氧化矽蝕刻速率更高的氮化矽蝕刻速率的示範性蝕刻製程的簡化流程圖。此製程包括以下步驟:從含氟氣體產生電漿,該電漿包含氟自由基與氟離子(1002)。如上所解釋,可在和氣體反應區域分離的基材處理腔室的電漿產生區域中形成電漿。此製程亦包括以下步驟:從電漿移除一部分的氟離子,以提供具有比氟離子更高濃度的氟自由基的反應性氣體(1004)。可使用離子抑制件來移除該部分的氟離子。此製程亦包括以下步驟:使包含氮化矽層與氧化矽層的基材暴露於反應性氣體,其中相較於反應性氣體蝕刻氧化矽層而言,反應性氣體係以更高的蝕刻速率來蝕刻氮化矽層(1006)。
應瞭解,第9-10圖中示出的示範性製程不被侷限在併同第1-5圖中示出的處理腔室或第6A、6B、7A、7B和8-9圖中示出的離子抑制構件的使用。反之,可使用其他硬體組態來執行根據本發明的實施例的製程。又,第9-10圖中示出的該些詳細步驟係根據本發明的實施例提供特定方法。根據替代的實施例,可由系統軟體來持續地重複上述的該些步驟,並且可執行該些步驟的其他順序。例如,可以不同的次序來執行上述的該些步驟。再者,第9-10圖中示出的個別步驟可包括多個子步驟,該等子步驟能依對個別步驟為適當的各種順序而被執行。又,取決於特定應用,可增加或移除額外的步驟。此技術領
域中具有一般技藝的人士可瞭解許多變化、變更與替代物。
應注意,本說明書通篇所討論的方法與設備僅被提供作為實例。各種實施例可依適當性而省略、取代或增加各種步驟或部件。例如,應瞭解,涉及特定實施例而描述的特徵可被結合在各種其他實施例中。又,可由硬體、軟體、韌體、中介體、微碼、硬體描述語言或任何上述組合來實施實施例。當被實施在軟體、韌體、中介體或微碼中時,用以執行必要任務的程式碼或碼片段可被儲存在電腦可讀媒體(諸如儲存媒體)中。處理器可適於執行必要任務。用語「電腦可讀媒體」包括但不限於可攜式或固定式儲存裝置、光學儲存裝置、SIM卡、其他智慧卡與能夠儲存、包含或承載指令或資料的各種其他媒體。
100‧‧‧處理腔室
102‧‧‧CCP單元
104‧‧‧噴頭
106‧‧‧蓋
108‧‧‧電絕緣體
110‧‧‧離子抑制件
112‧‧‧電漿激發區域
114‧‧‧流體供應系統
116‧‧‧氣體入口
120‧‧‧氣體供應區域
122‧‧‧孔洞
124‧‧‧氣體輸送區域
126‧‧‧第一組通道
130‧‧‧氣體反應區域
140‧‧‧RF產生器
150‧‧‧台座
305-335‧‧‧方塊
400‧‧‧處理系統
402‧‧‧第一氣體源
404‧‧‧RPS單元
406‧‧‧處理腔室
408‧‧‧氣體入口
410‧‧‧通孔
412‧‧‧氣體分佈板
414‧‧‧氣體區域
416‧‧‧氣體反應區域
418‧‧‧基材
420‧‧‧盤
422‧‧‧RF功率產生器
424‧‧‧孔洞
426‧‧‧通道
428‧‧‧噴頭
500‧‧‧處理系統
502‧‧‧第一氣體源
504‧‧‧RPS單元
506‧‧‧處理腔室
508‧‧‧氣體入口
510‧‧‧通孔
512‧‧‧離子抑制件
514‧‧‧氣體區域
516‧‧‧氣體反應區域
518‧‧‧基材
520‧‧‧盤
522‧‧‧第二氣體入口
600‧‧‧離子抑制構件
602‧‧‧管道
620‧‧‧噴頭
622‧‧‧第一孔洞
624‧‧‧第二孔洞
626‧‧‧去角(chamfer)
702‧‧‧通孔
704‧‧‧大ID區域
706‧‧‧小ID區域
710‧‧‧通孔
712‧‧‧大ID區域
714‧‧‧小ID區域
716‧‧‧大ID區域
720‧‧‧通孔
722‧‧‧大ID區域
724‧‧‧錐狀化區域
725‧‧‧電漿
726‧‧‧小ID區域
727‧‧‧總高度
728‧‧‧高度
730‧‧‧通孔
732‧‧‧第一ID區域
734‧‧‧第二ID區域
736‧‧‧第三ID區域
737‧‧‧出口ID
800‧‧‧CCP單元
802‧‧‧頂板
804‧‧‧底板
806‧‧‧通孔
808‧‧‧通孔
810‧‧‧電漿產生區域
820‧‧‧第一ID區域
822‧‧‧第二ID區域
824‧‧‧第三ID區域
826‧‧‧錐狀化區域
828‧‧‧去角邊緣
829‧‧‧去角邊緣
830‧‧‧大ID區域
832‧‧‧小ID區域
834‧‧‧錐狀化區域
902-910‧‧‧步驟
1002-1006‧‧‧步驟
可藉由參考本說明書與圖式的其餘部分來實現本發明的本質與優點的進一步瞭解,其中一些圖式中所使用的類似元件符號係指稱類似的元件。在一些情況中,元件符號涉及具有子符號且子符號在連字號之後以代表多個類似元件之一。當元件符號被參照而沒有載明現有的子符號時,吾等意圖指稱所有這樣的多個類似元件。
第1圖顯示根據本發明實施例的處理系統的簡化剖視
圖,該處理系統包括處理腔室,該處理腔室具有電容耦合電漿(CCP)單元與噴頭;第2圖顯示根據本發明實施例的處理系統的簡化透視圖,該處理系統包括處理腔室,該處理腔室具有CCP單元與噴頭;第3圖顯示根據本發明實施例的通過處理系統的一對氣體混合物的氣體流動路徑的簡化示意圖;第4圖顯示根據本發明實施例的處理系統的簡化剖視圖,該處理系統包括處理腔室,該處理腔室具有亦作為離子抑制構件的噴頭;第5圖顯示根據本發明實施例的處理系統的簡化剖視圖,該處理系統包括處理腔室,該處理腔室具有離子抑制板,該離子抑制板使電漿區域和氣體反應區域分隔;第6A圖顯示根據本發明實施例的離子抑制構件的簡化透視圖;第6B圖顯示根據本發明實施例的亦作為離子抑制構件的噴頭的簡化透視圖;第7A圖顯示根據本發明實施例用於離子抑制構件中的開口的一些示範性孔洞幾何形態;第7B圖顯示根據本發明實施例用於離子抑制構件中的開口的孔洞幾何形態的示意圖;第8圖顯示根據本發明實施例的一對電極中的相對開口的示範性組態,其中該對電極有助於在處理腔室中界定電漿區域;
第9圖是示出根據本發明實施例的從包含氮化矽層與氧化矽層的基材而選擇性地蝕刻氮化矽的示範性方法的簡化流程圖;及第10圖是示出根據本發明實施例而提供比氧化矽蝕刻速率更高的氮化矽蝕刻速率的示範性蝕刻製程的簡化流程圖。
1002-1006‧‧‧步驟
Claims (17)
- 一種從包含一氮化矽層與一氧化矽層的一基材選擇性地蝕刻氮化矽的方法,該方法包含以下步驟:使一含氟氣體流動到一基材處理腔室的一電漿產生區域內;施加能量到該含氟氣體,以在該電漿產生區域中產生一電漿,該電漿包含氟自由基與氟離子;過濾該電漿,以提供具有比氟離子更高濃度的氟自由基的一反應性氣體,其中從該電漿產生區域行進通過一離子抑制板到該基材的氟離子被消除;使該反應性氣體流動到該基材處理腔室的一氣體反應區域內,其中使該反應性氣體流動包含使該等氟自由基通過一噴頭到一氣體反應區域內,其中該噴頭設置在該電漿產生區域與該氣體反應區域之間,及其中該噴頭與該離子抑制構件電絕緣;及使該基材暴露於該基材處理腔室的該氣體反應區域中的該反應性氣體,其中相較於該反應性氣體蝕刻該氧化矽層而言,該反應性氣體係以一更高的蝕刻速率來蝕刻該氮化矽層。
- 如請求項1之方法,其中該含氟氣體包含NF3。
- 如請求項1之方法,其中該含氟氣體包含O2、O3、N2O、NO的一或更多個氣體。
- 如請求項1之方法,其中該含氟氣體包含He或Ar的至少一者。
- 如請求項1之方法,其中使用一電容耦合電漿單元來施加能量到該含氟氣體。
- 如請求項1之方法,其中該反應性氣體實質上不含有氟離子。
- 如請求項1之方法,其中使用設置在該基材處理腔室的該電漿產生區域與該氣體反應區域之間的一離子抑制件來過濾該電漿,該離子抑制件包含複數個通道,該等通道容許氟自由基在該電漿產生區域與該氣體反應區域之間的通過。
- 一種提供在基材上比一氧化矽蝕刻速率更高的一氮化矽蝕刻速率的蝕刻製程,該製程包含以下步驟:在一電漿產生區域中從一含氟氣體產生一電漿,該電漿包含氟自由基與氟離子;從該電漿移除一部分的該等氟離子,以提供具有比氟離子更高濃度的氟自由基的一反應性氣體,其中從該電漿產生區域行進通過一離子抑制板到該基材的氟離子被消除,其中移除一部分的該等氟離子更包 含使該等氟自由基通過一噴頭到一氣體反應區域內,其中該噴頭設置在該電漿產生區域與該氣體反應區域之間,其中該噴頭與該離子抑制構件電絕緣,及其中該氣體反應區域容納包含一氮化矽層與一氧化矽層的一基材;使該基材暴露於該反應性氣體,其中相較於該反應性氣體蝕刻該氧化矽層而言,該反應性氣體係以一更高的蝕刻速率來蝕刻該氮化矽層。
- 如請求項8之製程,其中該含氟氣體包含NF3。
- 如請求項8之製程,其中該含氟氣體包含O2、O3、N2O、NO的一或更多個氣體。
- 如請求項8之製程,其中該含氟氣體包含He或Ar的至少一者。
- 如請求項8之製程,其中使用一電容耦合電漿單元來產生該電漿。
- 如請求項8之製程,其中該反應性氣體實質上不含有氟離子。
- 如請求項8之製程,其中使用一離子抑制件從該電漿 移除該部分的該等氟離子,該離子抑制件包含複數個通道,該等通道容許氟自由基的通過與氟離子的抑制。
- 如請求項8之製程,其中該基材在該氮化矽層的蝕刻期間未被偏壓。
- 如請求項1之製程,其中該離子抑制板界定複數個抑制穿孔,該等抑制穿孔的特徵在於各個抑制穿孔朝向各個抑制穿孔的下游端之圓柱形擴展。
- 如請求項16之製程,其中該噴頭定義複數個噴頭穿孔,及其中各個噴頭穿孔和一抑制穿孔同心地對準。
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