TWI520212B - 選擇性氮化鈦蝕刻 - Google Patents
選擇性氮化鈦蝕刻 Download PDFInfo
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- TWI520212B TWI520212B TW102146153A TW102146153A TWI520212B TW I520212 B TWI520212 B TW I520212B TW 102146153 A TW102146153 A TW 102146153A TW 102146153 A TW102146153 A TW 102146153A TW I520212 B TWI520212 B TW I520212B
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 title claims description 77
- 238000005530 etching Methods 0.000 title claims description 55
- 238000000034 method Methods 0.000 claims description 125
- 239000000758 substrate Substances 0.000 claims description 105
- 239000002243 precursor Substances 0.000 claims description 88
- 230000008569 process Effects 0.000 claims description 87
- 238000012545 processing Methods 0.000 claims description 79
- 239000000463 material Substances 0.000 claims description 65
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 31
- 229910052721 tungsten Inorganic materials 0.000 claims description 31
- 239000010937 tungsten Substances 0.000 claims description 31
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 30
- 239000011737 fluorine Substances 0.000 claims description 30
- 229910052731 fluorine Inorganic materials 0.000 claims description 30
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 28
- 239000001257 hydrogen Substances 0.000 claims description 25
- 229910052739 hydrogen Inorganic materials 0.000 claims description 25
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 22
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 20
- 229910052786 argon Inorganic materials 0.000 claims description 11
- 239000001307 helium Substances 0.000 claims description 11
- 229910052734 helium Inorganic materials 0.000 claims description 11
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical group [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 11
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims description 7
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 6
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 5
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- SPPCMVNDPDQNRG-UHFFFAOYSA-L [F-].[F-].[Sb++] Chemical compound [F-].[F-].[Sb++] SPPCMVNDPDQNRG-UHFFFAOYSA-L 0.000 claims description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 3
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 64
- 239000012530 fluid Substances 0.000 description 26
- 150000002500 ions Chemical class 0.000 description 24
- 238000005516 engineering process Methods 0.000 description 14
- 239000012159 carrier gas Substances 0.000 description 11
- 239000000203 mixture Substances 0.000 description 9
- 239000011148 porous material Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 230000005284 excitation Effects 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 150000003254 radicals Chemical class 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910000449 hafnium oxide Inorganic materials 0.000 description 5
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910010421 TiNx Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Description
本專利申請案主張於2013年3月8日提出申請的美國專利申請案第13/791,125號的優先權權益,第13/791,125號申請案主張於2012年12月21日提出申請的美國臨時專利申請案第61/740,587號的優先權權益,上述二申請案之標題皆為「選擇性氮化鈦蝕刻(Selective Titanium Nitride Etching)」。為了所有的目的將該二申請案之整體揭示內容以引用方式併入本文中。
本技術係關於半導體製程及設備。更具體言之,本技術係關於半導體基板上的材料之選擇性蝕刻。
積體電路是採用在基板表面上產生圖案複雜的材料層的製程才能被製成。在基板上產生圖案化的材料需要使用受控制的方法來去除曝露的材料。化學蝕刻被使用於各種的目的,包括將光阻中的圖案轉移到下面的層、薄化層或薄化已經存在表面上的特徵的橫向尺寸。往往理想的是具有蝕刻一種材料比蝕刻另一種材料更快以便利例如圖案轉移製程的
蝕刻製程。這樣的蝕刻製程被說成對第一種材料有選擇性。由於材料、電路及製程的多樣性的結果,蝕刻製程已經被開發出具有對各種材料的選擇性。
濕HF蝕刻優先於其他介電質和半導體地去除氧化矽。然而,濕製程無法穿透一些受限的溝槽,而且有時會使剩餘的材料變形。在基板處理區域內形成的局部電漿中產生的乾蝕刻可以穿透更受限的溝槽,並表現出變形較少的細微剩餘結構。然而,局部電漿會在放電時由於產生電弧而損壞基板。
因此,需要一種在半導體基板上選擇性地蝕刻材料和結構的改良方法和系統。本技術滿足了這些和其他的需求。
茲描述在圖案化異質結構上相對於其他材料蝕刻曝露的氮化鈦的方法,而且該方法可以包括從含氟前驅物形成的遠端電漿蝕刻。使包括來自遠端電漿的電漿流出物的前驅物組合流入基板處理區域,以在各種的操作條件下以高的氮化鈦選擇率蝕刻該圖案化結構。該方法可被用於以比各種金屬、氮化物及氧化物化合物更快的速率去除氮化鈦。
該至少一另外的前驅物可以包括一或更多個選自於由氦氣、氬氣及分子氫(H2)所組成之群組的前驅物。該含氟前驅物可以包括一或更多個選自於由原子氟、雙原子氟、三氟化氮、四氟化碳、氟化氫及二氟化氙所組成之群組的前驅物。可以進行該方法,使得該半導體基板駐留的該處理區域在該蝕刻製程的過程中係無電漿。
該方法可以包括具有由氦氣和氬氣中之一者或兩者所組成的另外的前驅物。被輸入該處理區域的該前驅物組合可以大致上沒有氫。該曝露的第二材料可以包括氧化矽及/或氮化矽,並且該蝕刻操作之選擇率(曝露的氮化鈦區域:曝露的氧化矽區域)可以大於或約為5:1,而且在揭示的實施例中可以大於或約為10:1。在該蝕刻製程的過程中該基板的溫度可以被保持低於或約為50℃,而且在揭示的實施例中可以被保持在或低於約10℃。
該方法可以包括的是該至少一另外的前驅物包含氫,而且可以另外包括一或更多種載送氣體,該載送氣體包括氦氣或氬氣。該曝露的第二材料可以包括鎢,並且該蝕刻操作之選擇率(曝露的氮化鈦區域:曝露的鎢區域)可以大於或約為50:1,而且在揭示的實施例中,該蝕刻操作之選擇率(曝露的氮化鈦區域:曝露的鎢區域)可以大於或約為100:1。該圖案化基板可以進一步包括另外的曝露區域或材料,而且在揭示的實施例中,該基板進一步包含曝露的氮化矽區域。該蝕刻操作之選擇率(曝露的氮化鈦區域:曝露的氮化矽區域)可以大於或約為10:1。該圖案化基板可以進一步包括曝露的氧化矽區域,並且該蝕刻操作之選擇率(曝露的氮化鈦區域:曝露的氧化矽區域)可以大於或約為5:1。該圖案化基板可以進一步包括曝露的氮化鉭區域,並且該蝕刻操作之選擇率(曝露的氮化鈦區域:曝露的氮化鉭區域)可以大於或約為10:1。在該蝕刻製程的過程中該基板的溫度可以被保持在或高於約50℃,而且在揭示的實施例中,在該蝕
刻製程的過程中該基板的溫度可以被保持在或高於約200℃。該方法可以包括使該氫流入該基板處理區域而未在進入處理區域之前被任何遠端電漿激發。該方法在該遠端電漿區域中使用的該電漿可以是電容耦合電漿。
這樣的技術可以提供許多優於傳統技術的效益。例如,可以基於改良的選擇率來增加製程產量。此外,有了改良的、相對於多種材料的選擇性蝕刻,可以需要較少的、對曝露材料的保護。茲結合以下的描述和附圖來更詳細地描述這些和其他的實施例以及該等實施例之許多優點和特徵。
110‧‧‧操作
120‧‧‧操作
130‧‧‧操作
140‧‧‧操作
150‧‧‧操作
160‧‧‧操作
200‧‧‧製程腔室部分
201‧‧‧遠端電漿系統(RPS)
203‧‧‧冷卻板材
205‧‧‧氣體入口組合件
210‧‧‧流體供應系統
214‧‧‧上板
215‧‧‧第一電漿區域
216‧‧‧下板
217‧‧‧面板
218‧‧‧空間
219‧‧‧第一流體通道
220‧‧‧絕緣環
221‧‧‧第二流體通道
223‧‧‧離子抑制器
225‧‧‧噴灑頭
227‧‧‧小孔
231‧‧‧通孔
233‧‧‧基板處理區域
240‧‧‧電源
255‧‧‧基板
258‧‧‧氣體供應區域
259‧‧‧孔
265‧‧‧基座
300‧‧‧系統
302‧‧‧前開式晶圓傳送盒(FOUP)
304‧‧‧機器人手臂
306‧‧‧保持區域
308a-f‧‧‧基板處理腔室
310‧‧‧第二機器人手臂
藉由參照本說明書的剩餘部分及圖式可以實現對揭示的技術之本質與優點的進一步瞭解。
第1圖圖示依據所揭示實施例的氮化鈦選擇性蝕刻製程之流程圖。
第2A圖圖示依據所揭示技術的基板處理腔室之示意性剖面圖。
第2B圖圖示依據所揭示技術的一部分基板處理腔室之示意性剖面圖。
第2C圖圖示依據所揭示技術的噴灑頭之底部平面圖。
第3圖圖示依據所揭示技術的示例性基板處理系統之頂部平面圖。
在附圖中,相似的組件及/或特徵可以具有相同的數值參考標號。另外,相同類型的各個組件可以藉由在該參考
標號之後接續字母來進行區分,該字母可以在類似的組件及/或特徵之間進行區分。假使只在說明書中使用第一數值參考標號,則該描述係適用於任何一個具有相同第一數值參考標號的類似組件及/或特徵,而與該字母字尾無關。
本技術包括用於相對於其他材料去除在圖案化半導體基板上的氮化鈦的改良製程和化學曲線。雖然傳統的製程可以以比其他材料更慢或相等的速率去除氮化鈦,但目前所描述的技術允許以改良的速率去除氮化鈦。在這樣做時,基板產量可以以各種方式加以改良。例如,可以提高組合物被蝕刻的速率。此外,相對於將被去除的氮化鈦,可以需要較少的最初沉積或位於圖案化基板中、上或作為部分圖案化基板的材料。假使與氮化鈦位於基板上的另外的材料將被保持,但例如蝕刻速率與氮化鈦相同,則該另外的材料通常將需要被初始沉積或位置超出將被保持的,該將被保持的與將被去除的氮化鈦量之蝕刻速率成比例。因此,製程時間可能增加。然而,假使可以提高對氮化鈦的選擇率,則較少的第二材料將被去除,而且較少的另外材料將需要已初始沉積或位在基板上。因此,製程時間可被縮短。
描述了相對於圖案化異質結構上的其他材料蝕刻曝露的氮化鈦的方法,而且該方法可以包括從含氟前驅物形成的遠端電漿蝕刻。使包括來自遠端電漿的電漿流出物的前驅物組合流入基板處理區域,以在各種操作條件下以高的氮化鈦選擇率蝕刻圖案化結構。該方法可被用於以比各種金屬、
氮化物及氧化物化合物更快的速率去除氮化鈦。
選擇性乾蝕刻製程可被用於在圖案化半導體基板上相對於一種材料地去除另一種材料。然而,取決於曝露的材料,製程氣體和製程條件可能難以提供一種材料的適當蝕刻速率而不損壞另一種材料的曝露特徵。某些前驅物化學品的存在可能會直接影響各種材料的蝕刻速率和選擇性。本發明人已有利地確定,可以藉由在遠端電漿中激發含氟前驅物並基於要被保持的材料來限制與含氟前驅物一起使用的另外的前驅物來增強氮化鈦高於各種材料的選擇性。
為了更好地瞭解和理解本發明,現在參照第1圖,第1圖圖示依據所揭示實施例的氮化鈦選擇性蝕刻製程之流程圖。在第一操作之前,基板可以被圖案化而留下了曝露的氮化鈦區域和曝露的第二材料區域,該第二材料可以包括氮化鉭、鎢、氮化矽、氧化矽等中之一或更多者。可以已經進行了各種前段處理,包括閘、通孔及其他結構的形成。然後可以在操作110將圖案化的基板輸送到基板處理區域。在揭示的實施例中,假使在與進行蝕刻製程相同的腔室中進行先前的操作,則基板可以已經位在處理區域中。在操作120可以使三氟化氮(NF3)流入電漿區域,該電漿區域與處理區域分開但流體耦接。可以連同三氟化氮使用其他的氟來源,或是可以使用其他的氟來源來取代三氟化氮。一般來說,使含氟前驅物流入電漿區域,而且該含氟前驅物包含至少一選自於由原子氟、雙原子氟、三氟化氮、四氟化碳、氟化氫及二氟化氙所組成之群組的前驅物。
本文中可以將分離的電漿區域稱為遠端電漿區域,而且該分離的電漿區域可以在與處理腔室不同的模組內或在該處理腔室內的隔室內。可以在遠端電漿區域內形成電漿,藉以從含氟前驅物產生電漿流出物。在操作130,可以使一或更多種另外的前驅物另外流入電漿區域,或者可以導引一或更多種另外的前驅物繞過電漿區域而未被激發地流入處理區域。在揭示的實施例中,該另外的前驅物可以包括載送氣體,例如氦氣或氬氣,而且該另外的前驅物可以另外包括氫源,包括分子氫(H2)。在操作140,包括電漿流出物的前驅物之組合被導引流入處理區域。如前所述,該等前驅物可以已經在遠端電漿區域中預先混合,或是該等前驅物可以被彼此流體隔離直到被分開輸入處理區域。
在操作150,可以使用包括電漿流出物的前驅物組合選擇性地蝕刻圖案化基板,使得在圖案化基板上曝露的氮化鈦區域被以高於曝露的第二材料的速率去除。在操作160,反應性化學物種可以被從基板處理區域去除,然後可以從處理區域移出基板。使用本文所述的氣相乾蝕刻製程,發明人已經證實的是,關於與其他材料的蝕刻速率相比的氮化鈦蝕刻速率,超過5:1的蝕刻選擇率是有可能的。使用本文所述的方法可以實現的選擇率可另外以比第二材料更快的速率蝕刻氮化鈦,該第二材料(例如鎢)通常蝕刻地比氮化鈦更快,如以下將更詳細描述的。在本技術的實施例中,氮化鈦蝕刻速率可以比曝露的第二材料的蝕刻速率快約5倍或更多倍、快約10倍或更多倍、快約15倍或更多倍、快約20倍或更多
倍、快約50倍或更多倍、快約75倍或更多倍、快約100倍或更多倍等或更快。
取決於另外的前驅物或示例的製程中使用的前驅物,氮化鈦相對於曝露的第二材料的蝕刻速率可以被影響。例如,在揭示的實施例中,另外的前驅物可以是選自於由氦氣、氬氣及分子氫(H2)所組成之群組的一或更多種前驅物。在其他的實施例中,可以使用其他的含氫前驅物,包括例如氨。取決於另外被曝露的材料,可以將這些氣體組合使用來調整蝕刻特性。
當曝露的材料包括氮化鈦和某些其他包括氮化矽或氧化矽的材料時,該一或更多種另外的前驅物可以只包括載送氣體,例如氦氣及/或氬氣。在一個實施例中,該另外的前驅物只由氦氣及/或氬氣所組成。換句話說,包括電漿流出物且被輸送到處理區域的前驅物組合可以完全或大致上沒有任何氫或含氫前驅物。可以使該另外的前驅物與含氟前驅物一起流入電漿區域,以產生電漿流出物。當這些包括電漿流出物的前驅物組合被輸入處理區域時,曝露的氮化鈦區域對比曝露的氧化矽區域的蝕刻操作之選擇率可以高達、大於或約為2:1。該蝕刻選擇率還可以高達、大於或約為5:1、10:1、15:1、17:1、20:1等或更高。就被蝕刻材料的方面來說,在一分鐘的處理時間中約有100埃或更多的氮化鈦可以被蝕刻,同時有少於或約為20埃的氧化矽可以被去除。在其他的實施例中,少於或約為15埃、12埃、10埃、9埃、8埃、7埃、6埃、5埃、4埃、3埃、2埃、1埃或0埃的氧化矽可以被去除,
最後的情況表示在氮化鈦的蝕刻過程中氧化矽被保持了。
在蝕刻製程的過程中,基板可以被保持在或低於約400℃,而且可以被保持在或低於約300℃、200℃、100℃、80℃、75℃、50℃、25℃、10℃、0℃或更低。在製程的過程中,處理腔室可以被保持在或低於約100托,而且可以被保持在或低於約50托、25托、15托、5托、1托、0.1托等,或介於約0.1毫托和約10托之間。藉由將基板的溫度保持在較低的溫度(例如約10℃或更低)並且將製程腔室保持在低於約10托的壓力下,發明人已經確定的是,可以在氮化鈦的去除過程中進一步限制氧化物的去除量。
通常某些材料的蝕刻速率可以比氮化鈦更快,包括金屬,例如鎢。舉例來說,假使進行上述的蝕刻製程,則任何曝露的鎢可以被蝕刻地比曝露的氮化鈦更快。假使將要去除氮化鈦區域但要保持曝露的鎢區域,則這些蝕刻製程可能會難以控制,而且可能會損壞鎢的特徵。為了解決鎢對氮化鈦的選擇性,發明人已經確定的是,藉由包括氫作為其中一種另外的前驅物,則鎢的蝕刻速率可以被明顯減緩,使得對氮化鈦的選擇性反轉了,而且在揭示的實施例中,鎢的蝕刻速率可以被降低至約零。
在實施例中,前驅物可以包括分子氫與含氟自由基或替代的含氫前驅物。氫可以被包括在含氟自由基和載送氣體或以上討論被輸入遠端電漿區域的氣體中,電漿流出物在遠端電漿區域形成。或者,氫可以被與含氟前驅物分開輸送,使得氫繞過遠端電漿區域。例如,當使用諸如以下討論的雙
通道噴灑頭時,氫可以被輸入噴灑頭板材界定的空間中。因此,氫可以被輸送到處理區域而未被任何遠端電漿激發,而且氫可以在進入處理區域之後才與電漿流出物接觸。
當這些包括氫並含有電漿流出物的前驅物組合被輸入處理區域時,曝露的氮化鈦區域對比曝露的鎢區域的蝕刻操作之選擇率可以高達、大於或約為10:1。該蝕刻選擇率還可以高達、大於或約為20:1、50:1、100:1、500:1、1000:1等或更高,高達製程完全選擇針對氮化鈦並且沒有鎢被去除的點。就被蝕刻材料的方面來說,在一分鐘的處理時間中有高達或約3埃或更多的、6埃或更多的、或是10埃或更多的氮化鈦可以被蝕刻,同時有少於或約為1埃的鎢可以被去除。在其他的實施例中,少於或約為0.5埃、0.1埃、0.05埃、0.01埃、0.005埃、0.001埃、0.0001埃或0埃的鎢可以被去除,以上最後的情況表示曝露的鎢區域被完全保持了。
此製程還可以另外相對於其他材料來去除氮化鈦。例如,當氮化鈦被用於閘應用作為界面層或作為用於圖案化低介電常數(k)堆疊的硬遮罩時,另外的曝露材料可以包括一或更多種材料,諸如包括鎢的金屬及包括氮化矽、氧化矽和氮化鉭的材料。在許多的應用中,這些層將在氮化鈦的去除過程中被盡可能地保持。利用本技術所涵蓋的製程,可以相對於全部的這些材料來蝕刻氮化鈦,而且氮化鈦相對於每個材料的選擇率可以為至少或約5:1。在揭示的實施例中,氮化鈦可以相對於氧化矽被蝕刻,而且蝕刻操作的選擇率可以大於或約為2:1或是大於或約為5:1。氮化鈦可以相對於氮化
矽被蝕刻,而且蝕刻操作的選擇率可以大於或約為5:1或是大於或約為10:1。氮化鈦還可以相對於氮化鉭被蝕刻,而且蝕刻操作的選擇率可以大於或約為5:1或是大於或約為10:1。
藉由利用氫前驅物,含氟前驅物的電漿密度可以被降低,從而可以降低材料的蝕刻速率。這接著可能減少這些製程的基板產量。蝕刻速率時常可以藉由提高基板溫度來提高,但這又可能提高要保持的材料被蝕刻的速率。然而,發明人已經確定的是,本技術所描述的利用氫的製程化學品在溫度被升高時可以協同地作用,使得氮化鈦被去除的速率可以提高到比其他要保持的材料的蝕刻速率更快。因此,該製程可以允許基板被保持在或高於約0℃或介於約0℃和約400℃之間,但還可以被保持在或高於約10℃、25℃、50℃、75℃、80℃、100℃、200℃、300℃、400℃或更高。處理腔室可以被保持在或低於約100托,而且可以被保持在或低於約50托、25托、15托、5托、1托、0.1托等,或介於約0.1毫托和約10托之間。
可以將所述的製程結合其他的製程用於各式各樣的操作,其中鎢和氮化鈦可以皆位在圖案化基板上並被曝露出。例如,在包括NAND或三維NAND元件的閘結構中,鎢和氮化鈦可以皆位在基板上分別作為閘金屬和阻障材料。在處理過程中,可能需要使曝露的閘金屬凹入,同時保持一部分的氮化鈦,或是另外以較緩慢的速率蝕刻氮化鈦。因此,所述沒有氫的化學品可被用於較低的基板溫度,從而可以用比氮化鈦更快的速率來去除鎢。
該凹入操作可以曝露出氮化鈦區域或另外的氮化鈦區域,而且可以另外曝露出例如氮化鉭、氮化矽及氧化矽區域。一旦鎢已經凹入但又另外被保持住,則可能需要進一步蝕刻氮化鈦及或其他曝露的材料,且未進一步蝕刻或最少地進一步蝕刻剩餘的鎢。因此,可以進行所述協同利用氫作為前驅物且溫度升高的製程。例如,可以將基板溫度升高,同時將氫併入前驅物流體。因此,可以最少化鎢的進一步蝕刻,同時可以去除曝露的氮化鈦。以此方式,藉由組合這些蝕刻製程,可以在原地修改調整相對於鎢的氮化鈦蝕刻。藉由利用組合的製程,鎢可以被蝕刻地比氮化鈦更快,氮化鈦可以被蝕刻地比鎢更快,或是可以藉由調整氫濃度及/或某些處理條件(例如溫度)而以大致上相似或直接等同的速率蝕刻這兩種材料。如將被瞭解的,可以利用另外修改腔室壓力和電漿功率而進一步視可能的需要來調整蝕刻製程。有利的是,可以進行這些製程的調整而毋需破壞真空條件或將基板移到另外的腔室。這與傳統的技術相比可以縮短總處理時間並節省成本。蝕刻製程參數、化學品及組分的其他實例係揭示於以下描述示例性處理腔室和系統的過程中。
第2A圖圖示示例性的製程腔室部分200之剖面圖,製程腔室部分200在處理腔室內具有分開的電漿產生區域。在薄膜的蝕刻過程中,該薄膜例如氮化鈦、氮化鉭、鎢、矽、多晶矽、氧化矽、氮化矽、矽氧氮化物或矽氧碳化物等,可以使製程氣體經由氣體入口組合件205流入第一電漿區域
215。遠端電漿系統(RPS)201可以選擇性地被包括在系統中,而且可以處理第一氣體,然後該第一氣體經由氣體入口組合件205前進。入口組合件205可以包括兩個或更多個不同的氣體供應通道,其中第二通道(未圖示,若被包括的話)可以繞過RPS 201。因此,在揭示的實施例中,前驅物氣體可以以未被激發的狀態被輸送到處理腔室。在另一個實例中,通過RPS設置的第一通道可被用於製程氣體,而在揭示的實施例中繞過RPS的第二通道可被用於處理氣體。製程氣體可以在RPS 201內被激發,然後進入第一電漿區域215。因此,在揭示的實施例中,例如如上所討論的含氟前驅物可以通過RPS 201或繞過RPS單元。將可類似地理解這種配置所涵蓋的各種其他實例。
依據揭示的實施例,冷卻板材203、面板217、離子抑制器223、噴灑頭225及上面放置基板255的基板支座265被圖示出並且可以每個皆被包括。基座265可以具有熱交換通道,熱交換流體流過該熱交換通道來控制基板的溫度。這個架構可以容許基板255的溫度被冷卻或加熱來保持相對的低溫,例如介於約-20℃至約200℃之間。熱交換流體可以包含乙二醇及/或水。還可以使用嵌入的電阻加熱器元件來電阻式地加熱基座265的晶圓支撐盤(可以包含鋁、陶瓷或上述之組合),以實現相對的高溫,例如從高達或約100℃至約或約1100℃。加熱元件可以作為一個或更多個迴圈被形成在基座內,並且加熱器元件的外部可以與支撐盤的周邊相鄰,而加熱器元件的內部係沿著具有較小半徑的同心圓路
徑。接到加熱器元件的接線可以通過基座265的底桿,基座265的底桿可被進一步設置來旋轉。
面板217可以是金字塔形、圓錐形或具有狹窄頂部擴展到寬底部的另一個類似結構。面板217可以另外地如圖示為平坦的,並且包括複數個用於分配製程氣體的貫通通道。取決於RPS 201的用途,電漿產生氣體及/或電漿激發物種可以通過面板217中的複數個孔,如第2B圖所圖示,以更均勻地輸入第一電漿區域215。
示例性的架構可以包括使氣體入口組合件205開放進入氣體供應區域258,藉由面板217將氣體供應區域258與第一電漿區域215分隔,使得氣體/物種流經面板217中的孔進入第一電漿區域215。可以選擇結構和操作的特徵,以防止電漿從第一電漿區域215明顯回流返回進入供應區域258、氣體入口組合件205及流體供應系統210。結構特徵可以包括選擇使回流電漿失活的面板217中的孔之尺寸和橫截面幾何形狀。操作特徵可以包括保持氣體供應區域258和第一電漿區域215之間的壓力差,該壓力差保持電漿單向流動通過噴灑頭225。圖示面板217(或腔室的導電頂部)和噴灑頭225具有位於特徵之間的絕緣環220,絕緣環220允許AC電位被相對於噴灑頭225及/或離子抑制器223施加到面板217。絕緣環220可以位於面板217和噴灑頭225及/或離子抑制器223之間,以能夠在該第一電漿區域中形成電容耦合電漿(CCP)。擋板(未圖示)可以被另外放置在第一電漿區域215中或以其他方式與氣體入口組合件205耦接,以影響經由
氣體入口組合件205進入該區域的流體流動。
離子抑制器223可以包含板材或其他在整個結構中界定複數個孔的幾何形狀,該結構設以抑制離子化帶電物種遷移出電漿激發區域215,同時允許未帶電的中性或自由基物種通過離子抑制器223進入該抑制器和噴灑頭之間的活化氣體輸送區域。在揭示的實施例中,離子抑制器223可以包含具有各種孔架構的多孔板材。這些未帶電的物種可以包括高反應性的物種,該高反應性的物種被以較低反應性的載送氣體輸送通過該等孔。如以上所指出的,可以減少離子物種遷移通過該等孔,而且在一些情況下可以完全抑制離子物種遷移通過該等孔。控制離子物種通過離子抑制器223的量可以對被帶入而與下方的晶圓基板接觸的氣體混合物提供增加的控制,進而可以增加對氣體混合物之沉積及/或蝕刻特性的控制。例如,調整氣體混合物的離子濃度可以明顯改變氣體混合物的蝕刻選擇性,例如TiNx:SiOx蝕刻比、TiN:W蝕刻比等。在進行沉積的替代實施例中,還可以對介電質材料平移保形對可流動類型沉積的平衡。
離子抑制器223中的複數個孔可設以控制活性氣體通過離子抑制器223的通道,該活性氣體例如離子、自由基及/或中性物種。例如,可以控制孔的深寬比、或孔的直徑對長度及/或孔的幾何形狀,從而減少活化氣體中通過離子抑制器223的離子化帶電物種的流量。離子抑制器223中的孔可以包括面向電漿激發區域215的錐形部分以及面向噴灑頭225的圓柱形部分。可以設計圓柱形部分的形狀和尺寸來控制
離子物種通到噴灑頭225的流量。還可以施加可調整的電偏壓到離子抑制器223作為控制通過抑制器的離子物種流量的另外的手段。
離子抑制元件223可以發揮減少或消除離子化帶電物種從電漿產生區域前進到基板的量的功能。未帶電的中性和自由基物種仍可能通過離子抑制器中的開口而與基板反應。應當指出的是,完全消除圍繞基板的反應區域中的離子化帶電物種並不總是所期望的目標。在許多的情況下,離子物種必須到達基板,以進行蝕刻及/或沉積製程。在這些情況下,離子抑制器可以有助於以協助製程的水平控制反應區域中的離子物種濃度。
噴灑頭225與離子抑制器223的組合可以允許電漿存在於腔室電漿區域215中,以避免在基板處理區域233中直接激發氣體,同時還允許激發的物種從腔室電漿區域215進入基板處理區域233。以這種方式中,腔室可設以防止電漿接觸被蝕刻的基板255。這可以有利地保護若直接被產生的電漿接觸可能會被損壞、錯位或以其他方式變形的各種複雜結構和圖案化在基板上的薄膜。此外,當允許電漿接觸基板或接近基板的水平時,可以提高氧化物物種的蝕刻速率。因此,假使曝露的第二材料是氧化物,則可以藉由將電漿保持在基板的遠端來進一步保護這個材料。
該處理系統可以進一步包括與處理腔室電耦接的電源240,以提供電力給面板217、離子抑制器223、噴灑頭225及/或基座265,以在第一電漿區域215或處理區域233中產
生電漿。電源可設以視所進行的製程來輸送可調整的電力量至腔室。這樣的配置可允許可調整的電漿被用於所進行的製程。不像往往存在打開或關閉的功能的遠端電漿單元,可調整的電漿可設以輸送特定量的電力到電漿區域215。這接著可以允許發展出特定的電漿特性,使得前驅物可以被以特定的方式離解,以增強由這些前驅物產生的蝕刻輪廓。
電漿可以在噴灑頭225上方的腔室電漿區域215中或噴灑頭225下方的基板處理區域233中被點燃。腔室電漿區域215中可以存在電漿,以從含氟前驅物的進入流產生自由基-氟前驅物。可以在處理腔室的導電性頂部(例如面板217)和噴灑頭225及/或離子抑制器223之間施加通常在射頻(RF)範圍中的交流電壓,以在沉積過程中在腔室電漿區域215中點燃電漿。RF電源可以產生13.56MHz的高射頻頻率,但也可能會產生單獨的其他頻率或與13.56MHz頻率結合的其他頻率。
電漿功率可以有各種的頻率或多種頻率的組合。在示例性的處理系統中,電漿可以由被相對於離子抑制器223及/或噴灑頭225輸送到面板217的RF功率提供。在不同的實施例中,RF功率可以在約10瓦和約2000瓦之間、約100瓦和約2000瓦之間、約200瓦和約1500瓦之間或約200瓦和約1000瓦之間。在不同的實施例中,該示例性的處理系統中施加的RF頻率可以是小於約200kHz的低RF頻率、在約10MHz和約15MHz之間的高RF頻率或大於或約1GHz的微波頻率。電漿功率可以被電容耦合(CCP)或感應耦合(ICP)
進入遠端電漿區域。
當開啟基板處理區域233中的底部電漿以例如固化薄膜或清洗鄰接基板處理區域233的內表面時,可以使頂部電漿區域215停留在很低或無功率下。藉由在噴灑頭225和基座265或腔室底部之間施加交流電壓來點燃基板處理區域233中的電漿。可以在電漿存在的同時將清洗氣體引入基板處理區域233。
可以藉由本文所述的噴灑頭之實施例使流體(諸如前驅物,例如含氟前驅物)流入處理區域233。在電漿區域215中從製程氣體衍生的激發物種可以行進通過離子抑制器223及/或噴灑頭225中的孔,並與另外從噴灑頭的單獨部分流入處理區域233的前驅物反應。或者,假使所有的前驅物物種是在電漿區域215中被激發,則沒有另外的前驅物可以流過噴灑頭的該單獨部分。極少或沒有電漿可以存在於處理區域233中。在揭示的申請案中,前驅物的激發衍生物可以在基板上方的區域中結合,並且偶爾在基板上結合,以蝕刻結構或去除基板上的物種。
直接在第一電漿區域215中激發流體或在RPS單元201中激發流體可以提供幾個效益。由於第一電漿區域215中的電漿,可以增加處理區域233內衍生自流體的激發物種的濃度。這種增加可能是由於電漿在第一電漿區域215中的位置所致。處理區域233可以位於比遠端電漿系統(RPS)201更靠近第一電漿區域215,故留下較少的時間讓激發物種通過與其他氣體分子、腔室的壁及噴灑頭的表面碰撞而離開激發
態。
也可以提高處理區域233內衍生自製程氣體的激發物種的濃度之均勻性。這可以得自第一電漿區域215的形狀,第一電漿區域215的形狀可以更類似於處理區域233的形狀。在RPS 201中產生的激發物種相對於通過靠近噴灑頭225中心的孔的物種可以行進更遠的距離,以通過鄰近噴灑頭225邊緣的孔。較大的距離可能會導致激發物種的激發減少,而且例如可能會導致靠近基板邊緣的生長速率較緩慢。在第一電漿區域215中激發流體可以減輕流過RPS 201或者是繞過RPS單元周圍的流體的這種變化。
處理氣體可以在第一電漿區域215中被激發,而且可以以激發態通過噴灑頭225到達處理區233。雖然可以在處理區域233中產生電漿,但也可以替代地不在處理區域中產生電漿。在一個實例中,處理氣體或前驅物的唯一激發可以是來自在電漿區域215中激發處理氣體,以與在處理區域233中的他者反應。如前面所討論的,這可能是為了保護基板255上的圖案化結構。
除了流體前驅物之外,可以為了不同的目的在不同的時間引導其他的氣體,包括載送氣體,以幫助輸送。在沉積過程中,可以引導處理氣體來從腔室壁、基板、沉積薄膜及/或薄膜去除不要的物種。可以在電漿中激發處理氣體,然後使用處理氣體來減少或去除腔室內殘留的內容物。在其他所揭示的實施例中,也可以使用沒有電漿的處理氣體。當處理氣體包括水蒸汽時,可以使用質量流量計(MFM)、噴射
閥或由市售的水蒸汽產生器來實現輸送。可以經由RPS單元或繞過RPS單元將處理氣體引到處理區域233,而且可以進一步在第一電漿區域中激發處理氣體。
第2B圖圖示藉由面板217影響處理氣體分佈的特徵之詳細視圖。如第2A圖和第2B圖中所圖示,面板217、冷卻板203及氣體入口組合件205相交以界定出氣體供應區域258,製程氣體可以從氣體入口205被輸入氣體供應區域258。氣體可以填滿氣體供應區域258並通過面板217中的孔259流到第一電漿區域215。孔259可設以以大致上單向的方式導引流動,使得製程氣體可以流入處理區域233,但是也可以在穿過面板217之後被部分地或完全地防止回流進入氣體供應區域258。
可以將用於處理腔室部分200的氣體分配組合件(例如噴灑頭225)稱為雙通道噴灑頭(DCSH)並另外詳述於本文中的第2A圖及第2C圖所描述的實施例中。該雙通道噴灑頭可以準備用於蝕刻製程,該蝕刻製程允許在處理區域233外部分離蝕刻劑,以在被輸入處理區域之前提供有限的、與腔室組件和彼此的交互作用。
噴灑頭225可以包含上板214和下板216。該等板可以彼此耦接,以界定該等板之間的空間218。該等板的耦接可以便於提供通過上板和下板的第一流體通道219及通過下板216的第二流體通道221。所形成的通道可設以單獨經由第二流體通道221提供從空間218通過下板216的流體進出,並且可以將第一流體通道219與該等板之間的空間218和第
二流體通道221流體隔離。可以經由氣體分配組合件225的一側流體進出空間218。雖然第2圖的示例性系統包括雙通道噴灑頭,但應當理解的是,可以使用替代的分配組合件來在到達處理區域233之前將第一和第二前驅物保持流體隔離。例如,可以使用多孔板和板下面的管,雖然其他的架構也可以以降低的效率進行操作或無法提供如同所述雙通道噴灑頭一樣均勻的處理。
在圖示的實施例中,噴灑頭225可以經由第一流體通道219分配製程氣體,該製程氣體含有在腔室電漿區域215中被電漿激發之後的電漿流出物。在實施例中,被引入RPS 201及/或腔室電漿區域215的製程氣體可以含有氟,例如CF4、NF3或XeF2。該製程氣體還可以包括載送氣體,例如氦氣、氬氣、氮氣(N2)等。電漿流出物可以包括製程氣體的離子化或中性衍生物,而且本文中還可以將電漿流出物稱為自由基-氟前驅物,以指稱引入的製程氣體之原子組分。
第2C圖為依據揭示的實施例用於處理腔室的噴灑頭225之仰視圖。噴灑頭225與第2A圖中圖示的噴灑頭一致。圖示第一流體通道219的一個視圖的通孔231可以具有複數種形狀和架構,以控制並影響通過噴灑頭225的前驅物流動。圖示第二流體通道221的小孔227可以大致上均勻地分佈在噴灑頭的表面上,即使在通孔231之間亦然,此可有助於在前驅物離開噴灑頭時提供比其他架構更均勻的前驅物混合。
在2011年10月3日提出申請的專利申請案序號第
13/251,714號中更完整地描述了另外的雙通道噴灑頭以及此處理系統和腔室,為了所有的目的以不與所主張特徵及本文中的描述不一致的程度將該申請案以引用方式併入本文中。
可以將腔室電漿區域215或遠端電漿系統中的區域稱為遠端電漿區域。在實施例中,自由基前驅物(例如自由基-氟前驅物)係形成於遠端電漿區域中並進入基板處理區域,在基板處理區域中自由基前驅物可以或可以不與另外的前驅物結合。在實施例中,另外的前驅物只被自由基-氟前驅物激發。在實施例中,基本上可以將電漿功率僅施加於遠端電漿區域,以確保自由基-氟前驅物提供主要的激發。在不同的實施例中,可以使三氟化氮或另一種含氟前驅物以約25sccm和約500sccm之間、約50sccm和約150sccm之間或約75sccm和約125sccm之間的速率流入腔室電漿區域215。
進入腔室的前驅物之結合流動速率可以佔整體氣體混合物的0.05%至約20%體積;其餘的是載送氣體。在實施例中可以使含氟前驅物流入遠端電漿區域,但電漿流出物可以具有相同的體積流量比。在含氟前驅物的情況中,在含氟氣體穩定遠端電漿區域內的壓力之前可以先使淨化或載送氣體進入遠端電漿區域。
在前驅物、任何載送氣體和電漿流出物流入基板處理區域233的過程中,可以將基板處理區域233保持在各種壓力下。在不同的實施例中,可以將該壓力保持在約0.1毫托和約100托之間、約1托和約20托之間或約1托和約5托之間。
可以將沉積系統的實施例結合到更大的製造系統中,以生產積體電路晶片。第3圖圖示依據所揭示實施例的一個這樣的沉積、蝕刻、烘烤及固化腔室系統300。在該圖中,一對前開式晶圓傳送盒(FOUP)302供應各種尺寸的基板,該等基板由機器人手臂304接收,並在被放入其中一個基板處理腔室308a-f之前被放入低壓保持區域306。可以使用第二機器人手臂310來在保持區域306和基板處理腔室308a-f之間來回運送基板晶圓。可以整體配備每個基板處理腔室308a-f,以進行數種基板處理操作,除了循環層沉積(CLD)、原子層沉積(ALD)、化學氣相沉積(CVD)、物理氣相沉積(PVD)、蝕刻、預清洗、除氣、定向及其他的基板製程之外,該基板處理操作還包括本文所述的乾蝕刻製程。
基板處理腔室308a-f可以包括一或多個系統組件,用於沉積、退火、固化及/或蝕刻基板晶圓上的介電質薄膜在一個架構中,可以使用兩對處理腔室(例如308c-d和308e-f)來在基板上沉積介電質材料,並且可以使用第三對處理腔室(例如308a-b)蝕刻沉積的介電質。在另一個架構中,可以配置全部的三對腔室(例如308a-f)來在基板上蝕刻介電質薄膜。可以在與不同的實施例中所圖示的製造系統分離的腔室中進行所描述的任一或多種製程。
在前面的描述中,為了說明的目的,已經闡述許多的細節,以提供對本發明各種實施例的瞭解。然而,對於本技術領域中具有通常知識者而言,顯而易見的是,可以不使用這些細節中的一些、或是使用其他的細節來實施某些實施
例。
有了揭示的幾個實施例,在本技術領域中具有通常知識者將理解到,可以在不偏離本發明之精神下使用各種修改、替代結構以及均等物。此外,並未描述數個習知的製程及元件,以避免不必要地混淆本發明。因此,不應將以上描述視為限制本發明之範圍。
當提供數值的範圍時,應瞭解到,除非內文以其他方式清楚指明,否則在該範圍的上限與下限之間、每個到下限單位的最小部分之中間值亦為具體揭示的。在陳述範圍中的任何陳述值或中間值與該陳述範圍中的任何其他陳述值或中間值之間的每個較小範圍亦被涵括。該等較小範圍的上限與下限可獨立地被包括或排除於該範圍中,而且不論是該等較小範圍包括任一限值、不包括二限值或是包括二限值,該等較小範圍中的每個範圍亦被涵括於本發明中,取決於該陳述範圍中任何經具體排除的限值。當該陳述範圍包括該等限值中之一者或二者時,排除該等包括的限值中之任一者或二者的範圍亦被包括。
除非內文以其他方式清楚指明,否則本文中與所附申請專利範圍中使用的單數形「一」及「該」包括複數的指示對象。因此,舉例來說,提及「一孔」係包括複數個該種孔,而提及「該板材」係包括提及一或多個板材及其為本技術領域中具有通常知識者所習知的均等物,以此類推。
同樣地,當用於本說明書中及以下申請專利範圍中時,字眼「包含」、「含有」及「包括」意欲指明陳述的特
徵、整數、組件或步驟之存在,但該等字眼並不排除一或多個其他的特徵、整數、組件、步驟、動作或基團的存在或加入。
Claims (21)
- 一種在一基板處理腔室之一基板處理區域中蝕刻一圖案化基板的方法,其中該圖案化基板包括一曝露的氮化鈦區域及一包含一曝露的第二材料區域,該方法包含以下步驟:使一含氟前驅物流入一與該基板處理區域流體耦接的遠端電漿區域,同時在該遠端電漿區域中形成一電漿,以產生電漿流出物,其中該基板處理區域係藉由一噴灑頭或腔室壁與該遠端電漿區域至少部分分離;使至少一另外的前驅物流入該基板處理區域;以及使用包括該電漿流出物的前驅物組合蝕刻該曝露的氮化鈦區域,其中氮化鈦被以一比該曝露的第二材料更快的速率蝕刻,且其中該曝露的第二材料包含氧化矽、氮化矽、以及鎢之至少一者。
- 如請求項1所述之方法,其中該至少一另外的前驅物係選自於由氦氣、氬氣及分子氫(H2)所組成之群組。
- 如請求項1所述之方法,其中該含氟前驅物包含一選自於由原子氟、雙原子氟、三氟化氮、四氟化碳、氟化氫及二氟化氙所組成之群組的前驅物。
- 如請求項1所述之方法,其中該遠端電漿區域中的該電漿為一電容耦合電漿。
- 如請求項1所述之方法,其中該基板處理區域在該蝕刻製程的過程中係無電漿。
- 如請求項1所述之方法,其中該至少一另外的前驅物係由氦氣和氬氣中之任一者或氦氣和氬氣兩者所組成。
- 如請求項6所述之方法,其中包括該電漿流出物的該前驅物組合大致上沒有氫。
- 如請求項6所述之方法,其中該曝露的第二材料包含氧化矽,並且該蝕刻操作之選擇率大於或約為5:1,該選擇率係曝露的氮化鈦區域:曝露的氧化矽區域。
- 如請求項8所述之方法,其中該蝕刻操作之選擇率大於或約為10:1,該選擇率係曝露的氮化鈦區域:曝露的氧化矽區域。
- 如請求項6所述之方法,其中在該蝕刻製程的過程中該基板的溫度被保持在或低於約50℃。
- 如請求項10所述之方法,其中在該蝕刻製程的過程中該基板的溫度被保持在或低於約10℃。
- 如請求項1所述之方法,其中該至少一另外的前驅物包 含氫。
- 如請求項12所述之方法,其中該曝露的第二材料包含鎢,並且該蝕刻操作之選擇率大於或約為50:1,該選擇率係曝露的氮化鈦區域:曝露的鎢區域。
- 如請求項13所述之方法,其中該蝕刻操作之選擇率大於或約為100:1,該選擇率係曝露的氮化鈦區域:曝露的鎢區域。
- 如請求項13所述之方法,其中該圖案化基板進一步包含一曝露的氮化矽區域,並且該蝕刻操作之選擇率大於或約為10:1,該選擇率係曝露的氮化鈦區域:曝露的氮化矽區域。
- 如請求項13所述之方法,其中該圖案化基板進一步包含一曝露的氧化矽區域,並且該蝕刻操作之選擇率大於或約為5:1,該選擇率係曝露的氮化鈦區域:曝露的氧化矽區域。
- 如請求項13所述之方法,其中該圖案化基板進一步包含一曝露的氮化鉭區域,並且該蝕刻操作之選擇率大於或約為10:1,該選擇率係曝露的氮化鈦區域:曝露的氮化鉭區域。
- 如請求項12所述之方法,其中在該蝕刻製程的過程中該基板的溫度被保持在或高於約50℃。
- 如請求項18所述之方法,其中在該蝕刻製程的過程中該基板的溫度被保持在或高於約200℃。
- 如請求項12所述之方法,其中使該氫流入該基板處理區域而未先在一遠端電漿中被激發。
- 如請求項12所述之方法,其中該氫包含分子氫(H2)。
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2013
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2014
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US20140179111A1 (en) | 2014-06-26 |
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US20150118857A1 (en) | 2015-04-30 |
WO2014099260A1 (en) | 2014-06-26 |
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