TWI520212B - 選擇性氮化鈦蝕刻 - Google Patents

選擇性氮化鈦蝕刻 Download PDF

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TWI520212B
TWI520212B TW102146153A TW102146153A TWI520212B TW I520212 B TWI520212 B TW I520212B TW 102146153 A TW102146153 A TW 102146153A TW 102146153 A TW102146153 A TW 102146153A TW I520212 B TWI520212 B TW I520212B
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plasma
titanium nitride
selectivity
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TW201430946A (zh
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劉杰
張景春
王安川
英格爾尼汀Ｋ
朴勝浩
陳智君
徐菁鎂
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應用材料股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream

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  • Plasma & Fusion (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Description

選擇性氮化鈦蝕刻 【相關申請案的交叉引用】
本專利申請案主張於2013年3月8日提出申請的美國專利申請案第13/791,125號的優先權權益，第13/791,125號申請案主張於2012年12月21日提出申請的美國臨時專利申請案第61/740,587號的優先權權益，上述二申請案之標題皆為「選擇性氮化鈦蝕刻(Selective Titanium Nitride Etching)」。為了所有的目的將該二申請案之整體揭示內容以引用方式併入本文中。
本技術係關於半導體製程及設備。更具體言之，本技術係關於半導體基板上的材料之選擇性蝕刻。
積體電路是採用在基板表面上產生圖案複雜的材料層的製程才能被製成。在基板上產生圖案化的材料需要使用受控制的方法來去除曝露的材料。化學蝕刻被使用於各種的目的，包括將光阻中的圖案轉移到下面的層、薄化層或薄化已經存在表面上的特徵的橫向尺寸。往往理想的是具有蝕刻一種材料比蝕刻另一種材料更快以便利例如圖案轉移製程的 蝕刻製程。這樣的蝕刻製程被說成對第一種材料有選擇性。由於材料、電路及製程的多樣性的結果，蝕刻製程已經被開發出具有對各種材料的選擇性。
濕HF蝕刻優先於其他介電質和半導體地去除氧化矽。然而，濕製程無法穿透一些受限的溝槽，而且有時會使剩餘的材料變形。在基板處理區域內形成的局部電漿中產生的乾蝕刻可以穿透更受限的溝槽，並表現出變形較少的細微剩餘結構。然而，局部電漿會在放電時由於產生電弧而損壞基板。
因此，需要一種在半導體基板上選擇性地蝕刻材料和結構的改良方法和系統。本技術滿足了這些和其他的需求。
茲描述在圖案化異質結構上相對於其他材料蝕刻曝露的氮化鈦的方法，而且該方法可以包括從含氟前驅物形成的遠端電漿蝕刻。使包括來自遠端電漿的電漿流出物的前驅物組合流入基板處理區域，以在各種的操作條件下以高的氮化鈦選擇率蝕刻該圖案化結構。該方法可被用於以比各種金屬、氮化物及氧化物化合物更快的速率去除氮化鈦。
該至少一另外的前驅物可以包括一或更多個選自於由氦氣、氬氣及分子氫(H2)所組成之群組的前驅物。該含氟前驅物可以包括一或更多個選自於由原子氟、雙原子氟、三氟化氮、四氟化碳、氟化氫及二氟化氙所組成之群組的前驅物。可以進行該方法，使得該半導體基板駐留的該處理區域在該蝕刻製程的過程中係無電漿。
該方法可以包括具有由氦氣和氬氣中之一者或兩者所組成的另外的前驅物。被輸入該處理區域的該前驅物組合可以大致上沒有氫。該曝露的第二材料可以包括氧化矽及/或氮化矽，並且該蝕刻操作之選擇率(曝露的氮化鈦區域：曝露的氧化矽區域)可以大於或約為5：1，而且在揭示的實施例中可以大於或約為10：1。在該蝕刻製程的過程中該基板的溫度可以被保持低於或約為50℃，而且在揭示的實施例中可以被保持在或低於約10℃。
該方法可以包括的是該至少一另外的前驅物包含氫，而且可以另外包括一或更多種載送氣體，該載送氣體包括氦氣或氬氣。該曝露的第二材料可以包括鎢，並且該蝕刻操作之選擇率(曝露的氮化鈦區域：曝露的鎢區域)可以大於或約為50：1，而且在揭示的實施例中，該蝕刻操作之選擇率(曝露的氮化鈦區域：曝露的鎢區域)可以大於或約為100：1。該圖案化基板可以進一步包括另外的曝露區域或材料，而且在揭示的實施例中，該基板進一步包含曝露的氮化矽區域。該蝕刻操作之選擇率(曝露的氮化鈦區域：曝露的氮化矽區域)可以大於或約為10：1。該圖案化基板可以進一步包括曝露的氧化矽區域，並且該蝕刻操作之選擇率(曝露的氮化鈦區域：曝露的氧化矽區域)可以大於或約為5：1。該圖案化基板可以進一步包括曝露的氮化鉭區域，並且該蝕刻操作之選擇率(曝露的氮化鈦區域：曝露的氮化鉭區域)可以大於或約為10：1。在該蝕刻製程的過程中該基板的溫度可以被保持在或高於約50℃，而且在揭示的實施例中，在該蝕 刻製程的過程中該基板的溫度可以被保持在或高於約200℃。該方法可以包括使該氫流入該基板處理區域而未在進入處理區域之前被任何遠端電漿激發。該方法在該遠端電漿區域中使用的該電漿可以是電容耦合電漿。
這樣的技術可以提供許多優於傳統技術的效益。例如，可以基於改良的選擇率來增加製程產量。此外，有了改良的、相對於多種材料的選擇性蝕刻，可以需要較少的、對曝露材料的保護。茲結合以下的描述和附圖來更詳細地描述這些和其他的實施例以及該等實施例之許多優點和特徵。
110‧‧‧操作
120‧‧‧操作
130‧‧‧操作
140‧‧‧操作
150‧‧‧操作
160‧‧‧操作
200‧‧‧製程腔室部分
201‧‧‧遠端電漿系統(RPS)
203‧‧‧冷卻板材
205‧‧‧氣體入口組合件
210‧‧‧流體供應系統
214‧‧‧上板
215‧‧‧第一電漿區域
216‧‧‧下板
217‧‧‧面板
218‧‧‧空間
219‧‧‧第一流體通道
220‧‧‧絕緣環
221‧‧‧第二流體通道
223‧‧‧離子抑制器
225‧‧‧噴灑頭
227‧‧‧小孔
231‧‧‧通孔
233‧‧‧基板處理區域
240‧‧‧電源
255‧‧‧基板
258‧‧‧氣體供應區域
259‧‧‧孔
265‧‧‧基座
300‧‧‧系統
302‧‧‧前開式晶圓傳送盒(FOUP)
304‧‧‧機器人手臂
306‧‧‧保持區域
308a-f‧‧‧基板處理腔室
310‧‧‧第二機器人手臂
藉由參照本說明書的剩餘部分及圖式可以實現對揭示的技術之本質與優點的進一步瞭解。
第1圖圖示依據所揭示實施例的氮化鈦選擇性蝕刻製程之流程圖。
第2A圖圖示依據所揭示技術的基板處理腔室之示意性剖面圖。
第2B圖圖示依據所揭示技術的一部分基板處理腔室之示意性剖面圖。
第2C圖圖示依據所揭示技術的噴灑頭之底部平面圖。
第3圖圖示依據所揭示技術的示例性基板處理系統之頂部平面圖。
在附圖中，相似的組件及/或特徵可以具有相同的數值參考標號。另外，相同類型的各個組件可以藉由在該參考 標號之後接續字母來進行區分，該字母可以在類似的組件及/或特徵之間進行區分。假使只在說明書中使用第一數值參考標號，則該描述係適用於任何一個具有相同第一數值參考標號的類似組件及/或特徵，而與該字母字尾無關。
本技術包括用於相對於其他材料去除在圖案化半導體基板上的氮化鈦的改良製程和化學曲線。雖然傳統的製程可以以比其他材料更慢或相等的速率去除氮化鈦，但目前所描述的技術允許以改良的速率去除氮化鈦。在這樣做時，基板產量可以以各種方式加以改良。例如，可以提高組合物被蝕刻的速率。此外，相對於將被去除的氮化鈦，可以需要較少的最初沉積或位於圖案化基板中、上或作為部分圖案化基板的材料。假使與氮化鈦位於基板上的另外的材料將被保持，但例如蝕刻速率與氮化鈦相同，則該另外的材料通常將需要被初始沉積或位置超出將被保持的，該將被保持的與將被去除的氮化鈦量之蝕刻速率成比例。因此，製程時間可能增加。然而，假使可以提高對氮化鈦的選擇率，則較少的第二材料將被去除，而且較少的另外材料將需要已初始沉積或位在基板上。因此，製程時間可被縮短。
描述了相對於圖案化異質結構上的其他材料蝕刻曝露的氮化鈦的方法，而且該方法可以包括從含氟前驅物形成的遠端電漿蝕刻。使包括來自遠端電漿的電漿流出物的前驅物組合流入基板處理區域，以在各種操作條件下以高的氮化鈦選擇率蝕刻圖案化結構。該方法可被用於以比各種金屬、 氮化物及氧化物化合物更快的速率去除氮化鈦。
選擇性乾蝕刻製程可被用於在圖案化半導體基板上相對於一種材料地去除另一種材料。然而，取決於曝露的材料，製程氣體和製程條件可能難以提供一種材料的適當蝕刻速率而不損壞另一種材料的曝露特徵。某些前驅物化學品的存在可能會直接影響各種材料的蝕刻速率和選擇性。本發明人已有利地確定，可以藉由在遠端電漿中激發含氟前驅物並基於要被保持的材料來限制與含氟前驅物一起使用的另外的前驅物來增強氮化鈦高於各種材料的選擇性。
為了更好地瞭解和理解本發明，現在參照第1圖，第1圖圖示依據所揭示實施例的氮化鈦選擇性蝕刻製程之流程圖。在第一操作之前，基板可以被圖案化而留下了曝露的氮化鈦區域和曝露的第二材料區域，該第二材料可以包括氮化鉭、鎢、氮化矽、氧化矽等中之一或更多者。可以已經進行了各種前段處理，包括閘、通孔及其他結構的形成。然後可以在操作110將圖案化的基板輸送到基板處理區域。在揭示的實施例中，假使在與進行蝕刻製程相同的腔室中進行先前的操作，則基板可以已經位在處理區域中。在操作120可以使三氟化氮(NF3)流入電漿區域，該電漿區域與處理區域分開但流體耦接。可以連同三氟化氮使用其他的氟來源，或是可以使用其他的氟來源來取代三氟化氮。一般來說，使含氟前驅物流入電漿區域，而且該含氟前驅物包含至少一選自於由原子氟、雙原子氟、三氟化氮、四氟化碳、氟化氫及二氟化氙所組成之群組的前驅物。
本文中可以將分離的電漿區域稱為遠端電漿區域，而且該分離的電漿區域可以在與處理腔室不同的模組內或在該處理腔室內的隔室內。可以在遠端電漿區域內形成電漿，藉以從含氟前驅物產生電漿流出物。在操作130，可以使一或更多種另外的前驅物另外流入電漿區域，或者可以導引一或更多種另外的前驅物繞過電漿區域而未被激發地流入處理區域。在揭示的實施例中，該另外的前驅物可以包括載送氣體，例如氦氣或氬氣，而且該另外的前驅物可以另外包括氫源，包括分子氫(H2)。在操作140，包括電漿流出物的前驅物之組合被導引流入處理區域。如前所述，該等前驅物可以已經在遠端電漿區域中預先混合，或是該等前驅物可以被彼此流體隔離直到被分開輸入處理區域。
在操作150，可以使用包括電漿流出物的前驅物組合選擇性地蝕刻圖案化基板，使得在圖案化基板上曝露的氮化鈦區域被以高於曝露的第二材料的速率去除。在操作160，反應性化學物種可以被從基板處理區域去除，然後可以從處理區域移出基板。使用本文所述的氣相乾蝕刻製程，發明人已經證實的是，關於與其他材料的蝕刻速率相比的氮化鈦蝕刻速率，超過5：1的蝕刻選擇率是有可能的。使用本文所述的方法可以實現的選擇率可另外以比第二材料更快的速率蝕刻氮化鈦，該第二材料(例如鎢)通常蝕刻地比氮化鈦更快，如以下將更詳細描述的。在本技術的實施例中，氮化鈦蝕刻速率可以比曝露的第二材料的蝕刻速率快約5倍或更多倍、快約10倍或更多倍、快約15倍或更多倍、快約20倍或更多 倍、快約50倍或更多倍、快約75倍或更多倍、快約100倍或更多倍等或更快。
取決於另外的前驅物或示例的製程中使用的前驅物，氮化鈦相對於曝露的第二材料的蝕刻速率可以被影響。例如，在揭示的實施例中，另外的前驅物可以是選自於由氦氣、氬氣及分子氫(H2)所組成之群組的一或更多種前驅物。在其他的實施例中，可以使用其他的含氫前驅物，包括例如氨。取決於另外被曝露的材料，可以將這些氣體組合使用來調整蝕刻特性。
當曝露的材料包括氮化鈦和某些其他包括氮化矽或氧化矽的材料時，該一或更多種另外的前驅物可以只包括載送氣體，例如氦氣及/或氬氣。在一個實施例中，該另外的前驅物只由氦氣及/或氬氣所組成。換句話說，包括電漿流出物且被輸送到處理區域的前驅物組合可以完全或大致上沒有任何氫或含氫前驅物。可以使該另外的前驅物與含氟前驅物一起流入電漿區域，以產生電漿流出物。當這些包括電漿流出物的前驅物組合被輸入處理區域時，曝露的氮化鈦區域對比曝露的氧化矽區域的蝕刻操作之選擇率可以高達、大於或約為2：1。該蝕刻選擇率還可以高達、大於或約為5：1、10：1、15：1、17：1、20：1等或更高。就被蝕刻材料的方面來說，在一分鐘的處理時間中約有100埃或更多的氮化鈦可以被蝕刻，同時有少於或約為20埃的氧化矽可以被去除。在其他的實施例中，少於或約為15埃、12埃、10埃、9埃、8埃、7埃、6埃、5埃、4埃、3埃、2埃、1埃或0埃的氧化矽可以被去除， 最後的情況表示在氮化鈦的蝕刻過程中氧化矽被保持了。
在蝕刻製程的過程中，基板可以被保持在或低於約400℃，而且可以被保持在或低於約300℃、200℃、100℃、80℃、75℃、50℃、25℃、10℃、0℃或更低。在製程的過程中，處理腔室可以被保持在或低於約100托，而且可以被保持在或低於約50托、25托、15托、5托、1托、0.1托等，或介於約0.1毫托和約10托之間。藉由將基板的溫度保持在較低的溫度(例如約10℃或更低)並且將製程腔室保持在低於約10托的壓力下，發明人已經確定的是，可以在氮化鈦的去除過程中進一步限制氧化物的去除量。
通常某些材料的蝕刻速率可以比氮化鈦更快，包括金屬，例如鎢。舉例來說，假使進行上述的蝕刻製程，則任何曝露的鎢可以被蝕刻地比曝露的氮化鈦更快。假使將要去除氮化鈦區域但要保持曝露的鎢區域，則這些蝕刻製程可能會難以控制，而且可能會損壞鎢的特徵。為了解決鎢對氮化鈦的選擇性，發明人已經確定的是，藉由包括氫作為其中一種另外的前驅物，則鎢的蝕刻速率可以被明顯減緩，使得對氮化鈦的選擇性反轉了，而且在揭示的實施例中，鎢的蝕刻速率可以被降低至約零。
在實施例中，前驅物可以包括分子氫與含氟自由基或替代的含氫前驅物。氫可以被包括在含氟自由基和載送氣體或以上討論被輸入遠端電漿區域的氣體中，電漿流出物在遠端電漿區域形成。或者，氫可以被與含氟前驅物分開輸送，使得氫繞過遠端電漿區域。例如，當使用諸如以下討論的雙 通道噴灑頭時，氫可以被輸入噴灑頭板材界定的空間中。因此，氫可以被輸送到處理區域而未被任何遠端電漿激發，而且氫可以在進入處理區域之後才與電漿流出物接觸。
當這些包括氫並含有電漿流出物的前驅物組合被輸入處理區域時，曝露的氮化鈦區域對比曝露的鎢區域的蝕刻操作之選擇率可以高達、大於或約為10：1。該蝕刻選擇率還可以高達、大於或約為20：1、50：1、100：1、500：1、1000：1等或更高，高達製程完全選擇針對氮化鈦並且沒有鎢被去除的點。就被蝕刻材料的方面來說，在一分鐘的處理時間中有高達或約3埃或更多的、6埃或更多的、或是10埃或更多的氮化鈦可以被蝕刻，同時有少於或約為1埃的鎢可以被去除。在其他的實施例中，少於或約為0.5埃、0.1埃、0.05埃、0.01埃、0.005埃、0.001埃、0.0001埃或0埃的鎢可以被去除，以上最後的情況表示曝露的鎢區域被完全保持了。
此製程還可以另外相對於其他材料來去除氮化鈦。例如，當氮化鈦被用於閘應用作為界面層或作為用於圖案化低介電常數(k)堆疊的硬遮罩時，另外的曝露材料可以包括一或更多種材料，諸如包括鎢的金屬及包括氮化矽、氧化矽和氮化鉭的材料。在許多的應用中，這些層將在氮化鈦的去除過程中被盡可能地保持。利用本技術所涵蓋的製程，可以相對於全部的這些材料來蝕刻氮化鈦，而且氮化鈦相對於每個材料的選擇率可以為至少或約5：1。在揭示的實施例中，氮化鈦可以相對於氧化矽被蝕刻，而且蝕刻操作的選擇率可以大於或約為2：1或是大於或約為5：1。氮化鈦可以相對於氮化 矽被蝕刻，而且蝕刻操作的選擇率可以大於或約為5：1或是大於或約為10：1。氮化鈦還可以相對於氮化鉭被蝕刻，而且蝕刻操作的選擇率可以大於或約為5：1或是大於或約為10：1。
藉由利用氫前驅物，含氟前驅物的電漿密度可以被降低，從而可以降低材料的蝕刻速率。這接著可能減少這些製程的基板產量。蝕刻速率時常可以藉由提高基板溫度來提高，但這又可能提高要保持的材料被蝕刻的速率。然而，發明人已經確定的是，本技術所描述的利用氫的製程化學品在溫度被升高時可以協同地作用，使得氮化鈦被去除的速率可以提高到比其他要保持的材料的蝕刻速率更快。因此，該製程可以允許基板被保持在或高於約0℃或介於約0℃和約400℃之間，但還可以被保持在或高於約10℃、25℃、50℃、75℃、80℃、100℃、200℃、300℃、400℃或更高。處理腔室可以被保持在或低於約100托，而且可以被保持在或低於約50托、25托、15托、5托、1托、0.1托等，或介於約0.1毫托和約10托之間。
可以將所述的製程結合其他的製程用於各式各樣的操作，其中鎢和氮化鈦可以皆位在圖案化基板上並被曝露出。例如，在包括NAND或三維NAND元件的閘結構中，鎢和氮化鈦可以皆位在基板上分別作為閘金屬和阻障材料。在處理過程中，可能需要使曝露的閘金屬凹入，同時保持一部分的氮化鈦，或是另外以較緩慢的速率蝕刻氮化鈦。因此，所述沒有氫的化學品可被用於較低的基板溫度，從而可以用比氮化鈦更快的速率來去除鎢。
該凹入操作可以曝露出氮化鈦區域或另外的氮化鈦區域，而且可以另外曝露出例如氮化鉭、氮化矽及氧化矽區域。一旦鎢已經凹入但又另外被保持住，則可能需要進一步蝕刻氮化鈦及或其他曝露的材料，且未進一步蝕刻或最少地進一步蝕刻剩餘的鎢。因此，可以進行所述協同利用氫作為前驅物且溫度升高的製程。例如，可以將基板溫度升高，同時將氫併入前驅物流體。因此，可以最少化鎢的進一步蝕刻，同時可以去除曝露的氮化鈦。以此方式，藉由組合這些蝕刻製程，可以在原地修改調整相對於鎢的氮化鈦蝕刻。藉由利用組合的製程，鎢可以被蝕刻地比氮化鈦更快，氮化鈦可以被蝕刻地比鎢更快，或是可以藉由調整氫濃度及/或某些處理條件(例如溫度)而以大致上相似或直接等同的速率蝕刻這兩種材料。如將被瞭解的，可以利用另外修改腔室壓力和電漿功率而進一步視可能的需要來調整蝕刻製程。有利的是，可以進行這些製程的調整而毋需破壞真空條件或將基板移到另外的腔室。這與傳統的技術相比可以縮短總處理時間並節省成本。蝕刻製程參數、化學品及組分的其他實例係揭示於以下描述示例性處理腔室和系統的過程中。
示例性處理系統
第2A圖圖示示例性的製程腔室部分200之剖面圖，製程腔室部分200在處理腔室內具有分開的電漿產生區域。在薄膜的蝕刻過程中，該薄膜例如氮化鈦、氮化鉭、鎢、矽、多晶矽、氧化矽、氮化矽、矽氧氮化物或矽氧碳化物等，可以使製程氣體經由氣體入口組合件205流入第一電漿區域 215。遠端電漿系統(RPS)201可以選擇性地被包括在系統中，而且可以處理第一氣體，然後該第一氣體經由氣體入口組合件205前進。入口組合件205可以包括兩個或更多個不同的氣體供應通道，其中第二通道(未圖示，若被包括的話)可以繞過RPS 201。因此，在揭示的實施例中，前驅物氣體可以以未被激發的狀態被輸送到處理腔室。在另一個實例中，通過RPS設置的第一通道可被用於製程氣體，而在揭示的實施例中繞過RPS的第二通道可被用於處理氣體。製程氣體可以在RPS 201內被激發，然後進入第一電漿區域215。因此，在揭示的實施例中，例如如上所討論的含氟前驅物可以通過RPS 201或繞過RPS單元。將可類似地理解這種配置所涵蓋的各種其他實例。
依據揭示的實施例，冷卻板材203、面板217、離子抑制器223、噴灑頭225及上面放置基板255的基板支座265被圖示出並且可以每個皆被包括。基座265可以具有熱交換通道，熱交換流體流過該熱交換通道來控制基板的溫度。這個架構可以容許基板255的溫度被冷卻或加熱來保持相對的低溫，例如介於約-20℃至約200℃之間。熱交換流體可以包含乙二醇及/或水。還可以使用嵌入的電阻加熱器元件來電阻式地加熱基座265的晶圓支撐盤(可以包含鋁、陶瓷或上述之組合)，以實現相對的高溫，例如從高達或約100℃至約或約1100℃。加熱元件可以作為一個或更多個迴圈被形成在基座內，並且加熱器元件的外部可以與支撐盤的周邊相鄰，而加熱器元件的內部係沿著具有較小半徑的同心圓路 徑。接到加熱器元件的接線可以通過基座265的底桿，基座265的底桿可被進一步設置來旋轉。
面板217可以是金字塔形、圓錐形或具有狹窄頂部擴展到寬底部的另一個類似結構。面板217可以另外地如圖示為平坦的，並且包括複數個用於分配製程氣體的貫通通道。取決於RPS 201的用途，電漿產生氣體及/或電漿激發物種可以通過面板217中的複數個孔，如第2B圖所圖示，以更均勻地輸入第一電漿區域215。
示例性的架構可以包括使氣體入口組合件205開放進入氣體供應區域258，藉由面板217將氣體供應區域258與第一電漿區域215分隔，使得氣體/物種流經面板217中的孔進入第一電漿區域215。可以選擇結構和操作的特徵，以防止電漿從第一電漿區域215明顯回流返回進入供應區域258、氣體入口組合件205及流體供應系統210。結構特徵可以包括選擇使回流電漿失活的面板217中的孔之尺寸和橫截面幾何形狀。操作特徵可以包括保持氣體供應區域258和第一電漿區域215之間的壓力差，該壓力差保持電漿單向流動通過噴灑頭225。圖示面板217(或腔室的導電頂部)和噴灑頭225具有位於特徵之間的絕緣環220，絕緣環220允許AC電位被相對於噴灑頭225及/或離子抑制器223施加到面板217。絕緣環220可以位於面板217和噴灑頭225及/或離子抑制器223之間，以能夠在該第一電漿區域中形成電容耦合電漿(CCP)。擋板(未圖示)可以被另外放置在第一電漿區域215中或以其他方式與氣體入口組合件205耦接，以影響經由 氣體入口組合件205進入該區域的流體流動。
離子抑制器223可以包含板材或其他在整個結構中界定複數個孔的幾何形狀，該結構設以抑制離子化帶電物種遷移出電漿激發區域215，同時允許未帶電的中性或自由基物種通過離子抑制器223進入該抑制器和噴灑頭之間的活化氣體輸送區域。在揭示的實施例中，離子抑制器223可以包含具有各種孔架構的多孔板材。這些未帶電的物種可以包括高反應性的物種，該高反應性的物種被以較低反應性的載送氣體輸送通過該等孔。如以上所指出的，可以減少離子物種遷移通過該等孔，而且在一些情況下可以完全抑制離子物種遷移通過該等孔。控制離子物種通過離子抑制器223的量可以對被帶入而與下方的晶圓基板接觸的氣體混合物提供增加的控制，進而可以增加對氣體混合物之沉積及/或蝕刻特性的控制。例如，調整氣體混合物的離子濃度可以明顯改變氣體混合物的蝕刻選擇性，例如TiNx：SiOx蝕刻比、TiN：W蝕刻比等。在進行沉積的替代實施例中，還可以對介電質材料平移保形對可流動類型沉積的平衡。
離子抑制器223中的複數個孔可設以控制活性氣體通過離子抑制器223的通道，該活性氣體例如離子、自由基及/或中性物種。例如，可以控制孔的深寬比、或孔的直徑對長度及/或孔的幾何形狀，從而減少活化氣體中通過離子抑制器223的離子化帶電物種的流量。離子抑制器223中的孔可以包括面向電漿激發區域215的錐形部分以及面向噴灑頭225的圓柱形部分。可以設計圓柱形部分的形狀和尺寸來控制 離子物種通到噴灑頭225的流量。還可以施加可調整的電偏壓到離子抑制器223作為控制通過抑制器的離子物種流量的另外的手段。
離子抑制元件223可以發揮減少或消除離子化帶電物種從電漿產生區域前進到基板的量的功能。未帶電的中性和自由基物種仍可能通過離子抑制器中的開口而與基板反應。應當指出的是，完全消除圍繞基板的反應區域中的離子化帶電物種並不總是所期望的目標。在許多的情況下，離子物種必須到達基板，以進行蝕刻及/或沉積製程。在這些情況下，離子抑制器可以有助於以協助製程的水平控制反應區域中的離子物種濃度。
噴灑頭225與離子抑制器223的組合可以允許電漿存在於腔室電漿區域215中，以避免在基板處理區域233中直接激發氣體，同時還允許激發的物種從腔室電漿區域215進入基板處理區域233。以這種方式中，腔室可設以防止電漿接觸被蝕刻的基板255。這可以有利地保護若直接被產生的電漿接觸可能會被損壞、錯位或以其他方式變形的各種複雜結構和圖案化在基板上的薄膜。此外，當允許電漿接觸基板或接近基板的水平時，可以提高氧化物物種的蝕刻速率。因此，假使曝露的第二材料是氧化物，則可以藉由將電漿保持在基板的遠端來進一步保護這個材料。
該處理系統可以進一步包括與處理腔室電耦接的電源240，以提供電力給面板217、離子抑制器223、噴灑頭225及/或基座265，以在第一電漿區域215或處理區域233中產 生電漿。電源可設以視所進行的製程來輸送可調整的電力量至腔室。這樣的配置可允許可調整的電漿被用於所進行的製程。不像往往存在打開或關閉的功能的遠端電漿單元，可調整的電漿可設以輸送特定量的電力到電漿區域215。這接著可以允許發展出特定的電漿特性，使得前驅物可以被以特定的方式離解，以增強由這些前驅物產生的蝕刻輪廓。
電漿可以在噴灑頭225上方的腔室電漿區域215中或噴灑頭225下方的基板處理區域233中被點燃。腔室電漿區域215中可以存在電漿，以從含氟前驅物的進入流產生自由基-氟前驅物。可以在處理腔室的導電性頂部(例如面板217)和噴灑頭225及/或離子抑制器223之間施加通常在射頻(RF)範圍中的交流電壓，以在沉積過程中在腔室電漿區域215中點燃電漿。RF電源可以產生13.56MHz的高射頻頻率，但也可能會產生單獨的其他頻率或與13.56MHz頻率結合的其他頻率。
電漿功率可以有各種的頻率或多種頻率的組合。在示例性的處理系統中，電漿可以由被相對於離子抑制器223及/或噴灑頭225輸送到面板217的RF功率提供。在不同的實施例中，RF功率可以在約10瓦和約2000瓦之間、約100瓦和約2000瓦之間、約200瓦和約1500瓦之間或約200瓦和約1000瓦之間。在不同的實施例中，該示例性的處理系統中施加的RF頻率可以是小於約200kHz的低RF頻率、在約10MHz和約15MHz之間的高RF頻率或大於或約1GHz的微波頻率。電漿功率可以被電容耦合(CCP)或感應耦合(ICP) 進入遠端電漿區域。
當開啟基板處理區域233中的底部電漿以例如固化薄膜或清洗鄰接基板處理區域233的內表面時，可以使頂部電漿區域215停留在很低或無功率下。藉由在噴灑頭225和基座265或腔室底部之間施加交流電壓來點燃基板處理區域233中的電漿。可以在電漿存在的同時將清洗氣體引入基板處理區域233。
可以藉由本文所述的噴灑頭之實施例使流體(諸如前驅物，例如含氟前驅物)流入處理區域233。在電漿區域215中從製程氣體衍生的激發物種可以行進通過離子抑制器223及/或噴灑頭225中的孔，並與另外從噴灑頭的單獨部分流入處理區域233的前驅物反應。或者，假使所有的前驅物物種是在電漿區域215中被激發，則沒有另外的前驅物可以流過噴灑頭的該單獨部分。極少或沒有電漿可以存在於處理區域233中。在揭示的申請案中，前驅物的激發衍生物可以在基板上方的區域中結合，並且偶爾在基板上結合，以蝕刻結構或去除基板上的物種。
直接在第一電漿區域215中激發流體或在RPS單元201中激發流體可以提供幾個效益。由於第一電漿區域215中的電漿，可以增加處理區域233內衍生自流體的激發物種的濃度。這種增加可能是由於電漿在第一電漿區域215中的位置所致。處理區域233可以位於比遠端電漿系統(RPS)201更靠近第一電漿區域215，故留下較少的時間讓激發物種通過與其他氣體分子、腔室的壁及噴灑頭的表面碰撞而離開激發 態。
也可以提高處理區域233內衍生自製程氣體的激發物種的濃度之均勻性。這可以得自第一電漿區域215的形狀，第一電漿區域215的形狀可以更類似於處理區域233的形狀。在RPS 201中產生的激發物種相對於通過靠近噴灑頭225中心的孔的物種可以行進更遠的距離，以通過鄰近噴灑頭225邊緣的孔。較大的距離可能會導致激發物種的激發減少，而且例如可能會導致靠近基板邊緣的生長速率較緩慢。在第一電漿區域215中激發流體可以減輕流過RPS 201或者是繞過RPS單元周圍的流體的這種變化。
處理氣體可以在第一電漿區域215中被激發，而且可以以激發態通過噴灑頭225到達處理區233。雖然可以在處理區域233中產生電漿，但也可以替代地不在處理區域中產生電漿。在一個實例中，處理氣體或前驅物的唯一激發可以是來自在電漿區域215中激發處理氣體，以與在處理區域233中的他者反應。如前面所討論的，這可能是為了保護基板255上的圖案化結構。
除了流體前驅物之外，可以為了不同的目的在不同的時間引導其他的氣體，包括載送氣體，以幫助輸送。在沉積過程中，可以引導處理氣體來從腔室壁、基板、沉積薄膜及/或薄膜去除不要的物種。可以在電漿中激發處理氣體，然後使用處理氣體來減少或去除腔室內殘留的內容物。在其他所揭示的實施例中，也可以使用沒有電漿的處理氣體。當處理氣體包括水蒸汽時，可以使用質量流量計(MFM)、噴射 閥或由市售的水蒸汽產生器來實現輸送。可以經由RPS單元或繞過RPS單元將處理氣體引到處理區域233，而且可以進一步在第一電漿區域中激發處理氣體。
第2B圖圖示藉由面板217影響處理氣體分佈的特徵之詳細視圖。如第2A圖和第2B圖中所圖示，面板217、冷卻板203及氣體入口組合件205相交以界定出氣體供應區域258，製程氣體可以從氣體入口205被輸入氣體供應區域258。氣體可以填滿氣體供應區域258並通過面板217中的孔259流到第一電漿區域215。孔259可設以以大致上單向的方式導引流動，使得製程氣體可以流入處理區域233，但是也可以在穿過面板217之後被部分地或完全地防止回流進入氣體供應區域258。
可以將用於處理腔室部分200的氣體分配組合件(例如噴灑頭225)稱為雙通道噴灑頭(DCSH)並另外詳述於本文中的第2A圖及第2C圖所描述的實施例中。該雙通道噴灑頭可以準備用於蝕刻製程，該蝕刻製程允許在處理區域233外部分離蝕刻劑，以在被輸入處理區域之前提供有限的、與腔室組件和彼此的交互作用。
噴灑頭225可以包含上板214和下板216。該等板可以彼此耦接，以界定該等板之間的空間218。該等板的耦接可以便於提供通過上板和下板的第一流體通道219及通過下板216的第二流體通道221。所形成的通道可設以單獨經由第二流體通道221提供從空間218通過下板216的流體進出，並且可以將第一流體通道219與該等板之間的空間218和第 二流體通道221流體隔離。可以經由氣體分配組合件225的一側流體進出空間218。雖然第2圖的示例性系統包括雙通道噴灑頭，但應當理解的是，可以使用替代的分配組合件來在到達處理區域233之前將第一和第二前驅物保持流體隔離。例如，可以使用多孔板和板下面的管，雖然其他的架構也可以以降低的效率進行操作或無法提供如同所述雙通道噴灑頭一樣均勻的處理。
在圖示的實施例中，噴灑頭225可以經由第一流體通道219分配製程氣體，該製程氣體含有在腔室電漿區域215中被電漿激發之後的電漿流出物。在實施例中，被引入RPS 201及/或腔室電漿區域215的製程氣體可以含有氟，例如CF4、NF3或XeF2。該製程氣體還可以包括載送氣體，例如氦氣、氬氣、氮氣(N2)等。電漿流出物可以包括製程氣體的離子化或中性衍生物，而且本文中還可以將電漿流出物稱為自由基-氟前驅物，以指稱引入的製程氣體之原子組分。
第2C圖為依據揭示的實施例用於處理腔室的噴灑頭225之仰視圖。噴灑頭225與第2A圖中圖示的噴灑頭一致。圖示第一流體通道219的一個視圖的通孔231可以具有複數種形狀和架構，以控制並影響通過噴灑頭225的前驅物流動。圖示第二流體通道221的小孔227可以大致上均勻地分佈在噴灑頭的表面上，即使在通孔231之間亦然，此可有助於在前驅物離開噴灑頭時提供比其他架構更均勻的前驅物混合。
在2011年10月3日提出申請的專利申請案序號第 13/251,714號中更完整地描述了另外的雙通道噴灑頭以及此處理系統和腔室，為了所有的目的以不與所主張特徵及本文中的描述不一致的程度將該申請案以引用方式併入本文中。
可以將腔室電漿區域215或遠端電漿系統中的區域稱為遠端電漿區域。在實施例中，自由基前驅物(例如自由基-氟前驅物)係形成於遠端電漿區域中並進入基板處理區域，在基板處理區域中自由基前驅物可以或可以不與另外的前驅物結合。在實施例中，另外的前驅物只被自由基-氟前驅物激發。在實施例中，基本上可以將電漿功率僅施加於遠端電漿區域，以確保自由基-氟前驅物提供主要的激發。在不同的實施例中，可以使三氟化氮或另一種含氟前驅物以約25sccm和約500sccm之間、約50sccm和約150sccm之間或約75sccm和約125sccm之間的速率流入腔室電漿區域215。
進入腔室的前驅物之結合流動速率可以佔整體氣體混合物的0.05%至約20%體積；其餘的是載送氣體。在實施例中可以使含氟前驅物流入遠端電漿區域，但電漿流出物可以具有相同的體積流量比。在含氟前驅物的情況中，在含氟氣體穩定遠端電漿區域內的壓力之前可以先使淨化或載送氣體進入遠端電漿區域。
在前驅物、任何載送氣體和電漿流出物流入基板處理區域233的過程中，可以將基板處理區域233保持在各種壓力下。在不同的實施例中，可以將該壓力保持在約0.1毫托和約100托之間、約1托和約20托之間或約1托和約5托之間。
可以將沉積系統的實施例結合到更大的製造系統中，以生產積體電路晶片。第3圖圖示依據所揭示實施例的一個這樣的沉積、蝕刻、烘烤及固化腔室系統300。在該圖中，一對前開式晶圓傳送盒(FOUP)302供應各種尺寸的基板，該等基板由機器人手臂304接收，並在被放入其中一個基板處理腔室308a-f之前被放入低壓保持區域306。可以使用第二機器人手臂310來在保持區域306和基板處理腔室308a-f之間來回運送基板晶圓。可以整體配備每個基板處理腔室308a-f，以進行數種基板處理操作，除了循環層沉積(CLD)、原子層沉積(ALD)、化學氣相沉積(CVD)、物理氣相沉積(PVD)、蝕刻、預清洗、除氣、定向及其他的基板製程之外，該基板處理操作還包括本文所述的乾蝕刻製程。
基板處理腔室308a-f可以包括一或多個系統組件，用於沉積、退火、固化及/或蝕刻基板晶圓上的介電質薄膜在一個架構中，可以使用兩對處理腔室(例如308c-d和308e-f)來在基板上沉積介電質材料，並且可以使用第三對處理腔室(例如308a-b)蝕刻沉積的介電質。在另一個架構中，可以配置全部的三對腔室(例如308a-f)來在基板上蝕刻介電質薄膜。可以在與不同的實施例中所圖示的製造系統分離的腔室中進行所描述的任一或多種製程。
在前面的描述中，為了說明的目的，已經闡述許多的細節，以提供對本發明各種實施例的瞭解。然而，對於本技術領域中具有通常知識者而言，顯而易見的是，可以不使用這些細節中的一些、或是使用其他的細節來實施某些實施 例。
有了揭示的幾個實施例，在本技術領域中具有通常知識者將理解到，可以在不偏離本發明之精神下使用各種修改、替代結構以及均等物。此外，並未描述數個習知的製程及元件，以避免不必要地混淆本發明。因此，不應將以上描述視為限制本發明之範圍。
當提供數值的範圍時，應瞭解到，除非內文以其他方式清楚指明，否則在該範圍的上限與下限之間、每個到下限單位的最小部分之中間值亦為具體揭示的。在陳述範圍中的任何陳述值或中間值與該陳述範圍中的任何其他陳述值或中間值之間的每個較小範圍亦被涵括。該等較小範圍的上限與下限可獨立地被包括或排除於該範圍中，而且不論是該等較小範圍包括任一限值、不包括二限值或是包括二限值，該等較小範圍中的每個範圍亦被涵括於本發明中，取決於該陳述範圍中任何經具體排除的限值。當該陳述範圍包括該等限值中之一者或二者時，排除該等包括的限值中之任一者或二者的範圍亦被包括。
除非內文以其他方式清楚指明，否則本文中與所附申請專利範圍中使用的單數形「一」及「該」包括複數的指示對象。因此，舉例來說，提及「一孔」係包括複數個該種孔，而提及「該板材」係包括提及一或多個板材及其為本技術領域中具有通常知識者所習知的均等物，以此類推。
同樣地，當用於本說明書中及以下申請專利範圍中時，字眼「包含」、「含有」及「包括」意欲指明陳述的特 徵、整數、組件或步驟之存在，但該等字眼並不排除一或多個其他的特徵、整數、組件、步驟、動作或基團的存在或加入。

Claims (21)

  1. 一種在一基板處理腔室之一基板處理區域中蝕刻一圖案化基板的方法，其中該圖案化基板包括一曝露的氮化鈦區域及一包含一曝露的第二材料區域，該方法包含以下步驟：使一含氟前驅物流入一與該基板處理區域流體耦接的遠端電漿區域，同時在該遠端電漿區域中形成一電漿，以產生電漿流出物，其中該基板處理區域係藉由一噴灑頭或腔室壁與該遠端電漿區域至少部分分離；使至少一另外的前驅物流入該基板處理區域；以及使用包括該電漿流出物的前驅物組合蝕刻該曝露的氮化鈦區域，其中氮化鈦被以一比該曝露的第二材料更快的速率蝕刻，且其中該曝露的第二材料包含氧化矽、氮化矽、以及鎢之至少一者。
  2. 如請求項1所述之方法，其中該至少一另外的前驅物係選自於由氦氣、氬氣及分子氫(H2)所組成之群組。
  3. 如請求項1所述之方法，其中該含氟前驅物包含一選自於由原子氟、雙原子氟、三氟化氮、四氟化碳、氟化氫及二氟化氙所組成之群組的前驅物。
  4. 如請求項1所述之方法，其中該遠端電漿區域中的該電漿為一電容耦合電漿。
  5. 如請求項1所述之方法，其中該基板處理區域在該蝕刻製程的過程中係無電漿。
  6. 如請求項1所述之方法，其中該至少一另外的前驅物係由氦氣和氬氣中之任一者或氦氣和氬氣兩者所組成。
  7. 如請求項6所述之方法，其中包括該電漿流出物的該前驅物組合大致上沒有氫。
  8. 如請求項6所述之方法，其中該曝露的第二材料包含氧化矽，並且該蝕刻操作之選擇率大於或約為5：1，該選擇率係曝露的氮化鈦區域：曝露的氧化矽區域。
  9. 如請求項8所述之方法，其中該蝕刻操作之選擇率大於或約為10：1，該選擇率係曝露的氮化鈦區域：曝露的氧化矽區域。
  10. 如請求項6所述之方法，其中在該蝕刻製程的過程中該基板的溫度被保持在或低於約50℃。
  11. 如請求項10所述之方法，其中在該蝕刻製程的過程中該基板的溫度被保持在或低於約10℃。
  12. 如請求項1所述之方法，其中該至少一另外的前驅物包 含氫。
  13. 如請求項12所述之方法，其中該曝露的第二材料包含鎢，並且該蝕刻操作之選擇率大於或約為50：1，該選擇率係曝露的氮化鈦區域：曝露的鎢區域。
  14. 如請求項13所述之方法，其中該蝕刻操作之選擇率大於或約為100：1，該選擇率係曝露的氮化鈦區域：曝露的鎢區域。
  15. 如請求項13所述之方法，其中該圖案化基板進一步包含一曝露的氮化矽區域，並且該蝕刻操作之選擇率大於或約為10：1，該選擇率係曝露的氮化鈦區域：曝露的氮化矽區域。
  16. 如請求項13所述之方法，其中該圖案化基板進一步包含一曝露的氧化矽區域，並且該蝕刻操作之選擇率大於或約為5：1，該選擇率係曝露的氮化鈦區域：曝露的氧化矽區域。
  17. 如請求項13所述之方法，其中該圖案化基板進一步包含一曝露的氮化鉭區域，並且該蝕刻操作之選擇率大於或約為10：1，該選擇率係曝露的氮化鈦區域：曝露的氮化鉭區域。
  18. 如請求項12所述之方法，其中在該蝕刻製程的過程中該基板的溫度被保持在或高於約50℃。
  19. 如請求項18所述之方法，其中在該蝕刻製程的過程中該基板的溫度被保持在或高於約200℃。
  20. 如請求項12所述之方法，其中使該氫流入該基板處理區域而未先在一遠端電漿中被激發。
  21. 如請求項12所述之方法，其中該氫包含分子氫(H2)。
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Families Citing this family (142)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9478434B2 (en) 2014-09-24 2016-10-25 Applied Materials, Inc. Chlorine-based hardmask removal
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9570320B2 (en) * 2014-10-09 2017-02-14 Lam Research Corporation Method to etch copper barrier film
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
KR102485541B1 (ko) 2015-06-26 2023-01-05 도쿄엘렉트론가부시키가이샤 다른 필름 또는 마스크에 대한 실리콘-함유 반사 방지 코팅 또는 실리콘 산질화물의 제어 가능한 식각 선택비에 따른 기상 식각
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10267728B2 (en) * 2016-09-28 2019-04-23 Lam Research Corporation Systems and methods for detecting oxygen in-situ in a substrate area of a substrate processing system
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) * 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
JP6823533B2 (ja) * 2017-04-24 2021-02-03 東京エレクトロン株式会社 チタンシリサイド領域を形成する方法
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
WO2019027738A1 (en) * 2017-08-04 2019-02-07 Micromaterials Llc ENHANCED METAL CONTACT LANDING STRUCTURE
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10636675B2 (en) 2017-09-27 2020-04-28 Applied Materials, Inc. Methods of etching metal-containing layers
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
JP6795481B2 (ja) * 2017-11-07 2020-12-02 日立金属株式会社 絶縁電線
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
TWI716818B (zh) 2018-02-28 2021-01-21 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
JP6770988B2 (ja) * 2018-03-14 2020-10-21 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置および半導体装置の製造方法
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
TWI753250B (zh) * 2018-05-01 2022-01-21 美商應用材料股份有限公司 選擇性蝕刻方法及改善蝕刻選擇性的方法
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US11715643B2 (en) 2019-07-18 2023-08-01 Tokyo Electron Limited Gas phase etch with controllable etch selectivity of metals
US11183397B2 (en) 2019-10-18 2021-11-23 Beijing E-Town Semiconductor Technology, Co., Ltd Selective etch process using hydrofluoric acid and ozone gases
WO2021202229A1 (en) * 2020-03-31 2021-10-07 Mattson Technology, Inc. Processing of workpieces using fluorocarbon plasma
CN113539971B (zh) * 2020-04-10 2022-12-02 长鑫存储技术有限公司 半导体结构及其形成方法
US11769671B2 (en) * 2020-09-11 2023-09-26 Applied Materials, Inc. Systems and methods for selective metal compound removal
US11631589B2 (en) * 2021-05-04 2023-04-18 Applied Materials, Inc. Metal etch in high aspect-ratio features

Family Cites Families (1167)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2369620A (en) 1941-03-07 1945-02-13 Battelle Development Corp Method of coating cupreous metal with tin
US3451840A (en) 1965-10-06 1969-06-24 Us Air Force Wire coated with boron nitride and boron
US3537474A (en) 1968-02-19 1970-11-03 Varian Associates Push button vacuum control valve and vacuum system using same
US3969077A (en) 1971-12-16 1976-07-13 Varian Associates Alkali metal leak detection method and apparatus
US4632857A (en) 1974-05-24 1986-12-30 Richardson Chemical Company Electrolessly plated product having a polymetallic catalytic film underlayer
US4397812A (en) 1974-05-24 1983-08-09 Richardson Chemical Company Electroless nickel polyalloys
US4232060A (en) 1979-01-22 1980-11-04 Richardson Chemical Company Method of preparing substrate surface for electroless plating and products produced thereby
US4006047A (en) 1974-07-22 1977-02-01 Amp Incorporated Catalysts for electroless deposition of metals on comparatively low-temperature polyolefin and polyester substrates
US3937857A (en) 1974-07-22 1976-02-10 Amp Incorporated Catalyst for electroless deposition of metals
US4265943A (en) 1978-11-27 1981-05-05 Macdermid Incorporated Method and composition for continuous electroless copper deposition using a hypophosphite reducing agent in the presence of cobalt or nickel ions
US4234628A (en) 1978-11-28 1980-11-18 The Harshaw Chemical Company Two-step preplate system for polymeric surfaces
US4214946A (en) 1979-02-21 1980-07-29 International Business Machines Corporation Selective reactive ion etching of polysilicon against SiO2 utilizing SF6 -Cl2 -inert gas etchant
US4209357A (en) 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus
IT1130955B (it) 1980-03-11 1986-06-18 Oronzio De Nora Impianti Procedimento per la formazione di elettroci sulle superficie di membrane semipermeabili e sistemi elettrodo-membrana cosi' prodotti
US4361418A (en) 1980-05-06 1982-11-30 Risdon Corporation High vacuum processing system having improved recycle draw-down capability under high humidity ambient atmospheric conditions
NL8004005A (nl) 1980-07-11 1982-02-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US4381441A (en) 1980-10-30 1983-04-26 Western Electric Company, Inc. Methods of and apparatus for trimming film resistors
US4368223A (en) 1981-06-01 1983-01-11 Asahi Glass Company, Ltd. Process for preparing nickel layer
DE3205345A1 (de) 1982-02-15 1983-09-01 Philips Patentverwaltung Gmbh, 2000 Hamburg "verfahren zur herstellung von fluordotierten lichtleitfasern"
US4585920A (en) 1982-05-21 1986-04-29 Tegal Corporation Plasma reactor removable insert
JPS591671A (ja) 1982-05-28 1984-01-07 Fujitsu Ltd プラズマｃｖｄ装置
JPS6060060A (ja) 1983-09-12 1985-04-06 株式会社日立製作所 鉄道車両の扉開閉装置
US4579618A (en) 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
US4656052A (en) 1984-02-13 1987-04-07 Kyocera Corporation Process for production of high-hardness boron nitride film
US4571819A (en) 1984-11-01 1986-02-25 Ncr Corporation Method for forming trench isolation structures
JPS61276977A (ja) 1985-05-30 1986-12-06 Canon Inc 堆積膜形成法
US4807016A (en) 1985-07-15 1989-02-21 Texas Instruments Incorporated Dry etch of phosphosilicate glass with selectivity to undoped oxide
US4714520A (en) 1985-07-25 1987-12-22 Advanced Micro Devices, Inc. Method for filling a trench in an integrated circuit structure without producing voids
US4749440A (en) 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
US4690746A (en) 1986-02-24 1987-09-01 Genus, Inc. Interlayer dielectric process
US4715937A (en) 1986-05-05 1987-12-29 The Board Of Trustees Of The Leland Stanford Junior University Low-temperature direct nitridation of silicon in nitrogen plasma generated by microwave discharge
US4892753A (en) 1986-12-19 1990-01-09 Applied Materials, Inc. Process for PECVD of silicon oxide using TEOS decomposition
US4951601A (en) 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
US5000113A (en) 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US5228501A (en) 1986-12-19 1993-07-20 Applied Materials, Inc. Physical vapor deposition clamping mechanism and heater/cooler
US4872947A (en) 1986-12-19 1989-10-10 Applied Materials, Inc. CVD of silicon oxide using TEOS decomposition and in-situ planarization process
US4960488A (en) 1986-12-19 1990-10-02 Applied Materials, Inc. Reactor chamber self-cleaning process
JPS63204726A (ja) 1987-02-20 1988-08-24 Anelva Corp 真空処理装置
US4868071A (en) 1987-02-24 1989-09-19 Polyonics Corporation Thermally stable dual metal coated laminate products made from textured polyimide film
US5322976A (en) 1987-02-24 1994-06-21 Polyonics Corporation Process for forming polyimide-metal laminates
DE3856483T2 (de) 1987-03-18 2002-04-18 Kabushiki Kaisha Toshiba, Kawasaki Verfahren zur Herstellung von Dünnschichten
US4793897A (en) 1987-03-20 1988-12-27 Applied Materials, Inc. Selective thin film etch process
US4786360A (en) 1987-03-30 1988-11-22 International Business Machines Corporation Anisotropic etch process for tungsten metallurgy
US5198034A (en) 1987-03-31 1993-03-30 Epsilon Technology, Inc. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
DE3884653T2 (de) 1987-04-03 1994-02-03 Fujitsu Ltd Verfahren und Vorrichtung zur Gasphasenabscheidung von Diamant.
US4913929A (en) 1987-04-21 1990-04-03 The Board Of Trustees Of The Leland Stanford Junior University Thermal/microwave remote plasma multiprocessing reactor and method of use
US4753898A (en) 1987-07-09 1988-06-28 Motorola, Inc. LDD CMOS process
US4886570A (en) 1987-07-16 1989-12-12 Texas Instruments Incorporated Processing apparatus and method
US4820377A (en) 1987-07-16 1989-04-11 Texas Instruments Incorporated Method for cleanup processing chamber and vacuum process module
US4904621A (en) 1987-07-16 1990-02-27 Texas Instruments Incorporated Remote plasma generation process using a two-stage showerhead
US4878994A (en) 1987-07-16 1989-11-07 Texas Instruments Incorporated Method for etching titanium nitride local interconnects
US4857140A (en) 1987-07-16 1989-08-15 Texas Instruments Incorporated Method for etching silicon nitride
US4838990A (en) 1987-07-16 1989-06-13 Texas Instruments Incorporated Method for plasma etching tungsten
US4828649A (en) 1987-07-16 1989-05-09 Texas Instruments Incorporated Method for etching an aluminum film doped with silicon
JPS6432627A (en) 1987-07-29 1989-02-02 Hitachi Ltd Low-temperature dry etching method
US4810520A (en) 1987-09-23 1989-03-07 Magnetic Peripherals Inc. Method for controlling electroless magnetic plating
US5180435A (en) 1987-09-24 1993-01-19 Research Triangle Institute, Inc. Remote plasma enhanced CVD method and apparatus for growing an epitaxial semiconductor layer
KR930003136B1 (ko) 1987-10-14 1993-04-22 후루가와덴기 고오교오 가부시기가이샤 프라즈마 cvd에 의한 박막 형성장치
US4865685A (en) 1987-11-03 1989-09-12 North Carolina State University Dry etching of silicon carbide
US4981551A (en) 1987-11-03 1991-01-01 North Carolina State University Dry etching of silicon carbide
US4851370A (en) 1987-12-28 1989-07-25 American Telephone And Telegraph Company, At&T Bell Laboratories Fabricating a semiconductor device with low defect density oxide
JPH029115A (ja) 1988-06-28 1990-01-12 Mitsubishi Electric Corp 半導体製造装置
US4904341A (en) 1988-08-22 1990-02-27 Westinghouse Electric Corp. Selective silicon dioxide etchant for superconductor integrated circuits
US4894352A (en) 1988-10-26 1990-01-16 Texas Instruments Inc. Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride
KR930004115B1 (ko) 1988-10-31 1993-05-20 후지쓰 가부시끼가이샤 애싱(ashing)처리방법 및 장치
US5030319A (en) 1988-12-27 1991-07-09 Kabushiki Kaisha Toshiba Method of oxide etching with condensed plasma reaction product
JP2981243B2 (ja) 1988-12-27 1999-11-22 株式会社東芝 表面処理方法
US4985372A (en) 1989-02-17 1991-01-15 Tokyo Electron Limited Method of forming conductive layer including removal of native oxide
JPH02121330U (zh) 1989-03-15 1990-10-02
JP2823276B2 (ja) 1989-03-18 1998-11-11 株式会社東芝 Ｘ線マスクの製造方法および薄膜の内部応力制御装置
US4877482A (en) * 1989-03-23 1989-10-31 Motorola Inc. Nitride removal method
US4946903A (en) 1989-03-27 1990-08-07 The Research Foundation Of State University Of Ny Oxyfluoropolymers having chemically reactive surface functionality and increased surface energies
US5186718A (en) 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
US5061838A (en) 1989-06-23 1991-10-29 Massachusetts Institute Of Technology Toroidal electron cyclotron resonance reactor
US5270125A (en) 1989-07-11 1993-12-14 Redwood Microsystems, Inc. Boron nutride membrane in wafer structure
US5013691A (en) 1989-07-31 1991-05-07 At&T Bell Laboratories Anisotropic deposition of silicon dioxide
US5028565A (en) 1989-08-25 1991-07-02 Applied Materials, Inc. Process for CVD deposition of tungsten layer on semiconductor wafer
US4994404A (en) 1989-08-28 1991-02-19 Motorola, Inc. Method for forming a lightly-doped drain (LDD) structure in a semiconductor device
US4980018A (en) 1989-11-14 1990-12-25 Intel Corporation Plasma etching process for refractory metal vias
DE69111493T2 (de) 1990-03-12 1996-03-21 Ngk Insulators Ltd Wafer-Heizgeräte für Apparate, zur Halbleiterherstellung Heizanlage mit diesen Heizgeräten und Herstellung von Heizgeräten.
JP2960466B2 (ja) 1990-03-19 1999-10-06 株式会社日立製作所 半導体デバイスの配線絶縁膜の形成方法及びその装置
US5089441A (en) 1990-04-16 1992-02-18 Texas Instruments Incorporated Low-temperature in-situ dry cleaning process for semiconductor wafers
US5328810A (en) 1990-05-07 1994-07-12 Micron Technology, Inc. Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process
US5147692A (en) 1990-05-08 1992-09-15 Macdermid, Incorporated Electroless plating of nickel onto surfaces such as copper or fused tungston
US5238499A (en) 1990-07-16 1993-08-24 Novellus Systems, Inc. Gas-based substrate protection during processing
US5083030A (en) 1990-07-18 1992-01-21 Applied Photonics Research Double-sided radiation-assisted processing apparatus
JPH04228572A (ja) 1990-08-10 1992-08-18 Sumitomo Electric Ind Ltd 硬質窒化ホウ素合成法
US5235139A (en) 1990-09-12 1993-08-10 Macdermid, Incorprated Method for fabricating printed circuits
US5089442A (en) 1990-09-20 1992-02-18 At&T Bell Laboratories Silicon dioxide deposition method using a magnetic field and both sputter deposition and plasma-enhanced cvd
KR930011413B1 (ko) 1990-09-25 1993-12-06 가부시키가이샤 한도오따이 에네루기 겐큐쇼 펄스형 전자파를 사용한 플라즈마 cvd 법
EP0478233B1 (en) 1990-09-27 1996-01-03 AT&T Corp. Process for fabricating integrated circuits
JPH04142738A (ja) 1990-10-04 1992-05-15 Sony Corp ドライエッチング方法
US5549780A (en) 1990-10-23 1996-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for plasma processing and apparatus for plasma processing
JP2640174B2 (ja) 1990-10-30 1997-08-13 三菱電機株式会社 半導体装置およびその製造方法
JP3206916B2 (ja) 1990-11-28 2001-09-10 住友電気工業株式会社 欠陥濃度低減方法、紫外線透過用光学ガラスの製造方法及び紫外線透過用光学ガラス
US5578130A (en) 1990-12-12 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Apparatus and method for depositing a film
EP0519079B1 (en) 1991-01-08 1999-03-03 Fujitsu Limited Process for forming silicon oxide film
JPH04239723A (ja) 1991-01-23 1992-08-27 Nec Corp 半導体装置の製造方法
JP2697315B2 (ja) 1991-01-23 1998-01-14 日本電気株式会社 フッ素含有シリコン酸化膜の形成方法
JP2787142B2 (ja) 1991-03-01 1998-08-13 上村工業 株式会社 無電解錫、鉛又はそれらの合金めっき方法
US5897751A (en) 1991-03-11 1999-04-27 Regents Of The University Of California Method of fabricating boron containing coatings
EP0511448A1 (en) 1991-04-30 1992-11-04 International Business Machines Corporation Method and apparatus for in-situ and on-line monitoring of a trench formation process
JPH04341568A (ja) 1991-05-16 1992-11-27 Toshiba Corp 薄膜形成方法及び薄膜形成装置
DE69224640T2 (de) 1991-05-17 1998-10-01 Lam Res Corp VERFAHREN ZUR BESCHICHTUNG EINES SIOx FILMES MIT REDUZIERTER INTRINSISCHER SPANNUNG UND/ODER REDUZIERTEM WASSERSTOFFGEHALT
JP2699695B2 (ja) 1991-06-07 1998-01-19 日本電気株式会社 化学気相成長法
US5203911A (en) 1991-06-24 1993-04-20 Shipley Company Inc. Controlled electroless plating
US6074512A (en) 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US5279865A (en) 1991-06-28 1994-01-18 Digital Equipment Corporation High throughput interlevel dielectric gap filling process
JPH0562936A (ja) 1991-09-03 1993-03-12 Mitsubishi Electric Corp プラズマ処理装置およびプラズマクリーニング方法
US5240497A (en) 1991-10-08 1993-08-31 Cornell Research Foundation, Inc. Alkaline free electroless deposition
JPH05226480A (ja) 1991-12-04 1993-09-03 Nec Corp 半導体装置の製造方法
US5279669A (en) 1991-12-13 1994-01-18 International Business Machines Corporation Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions
US5290382A (en) 1991-12-13 1994-03-01 Hughes Aircraft Company Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films
US5352636A (en) 1992-01-16 1994-10-04 Applied Materials, Inc. In situ method for cleaning silicon surface and forming layer thereon in same chamber
US5300463A (en) 1992-03-06 1994-04-05 Micron Technology, Inc. Method of selectively etching silicon dioxide dielectric layers on semiconductor wafers
JP3084497B2 (ja) 1992-03-25 2000-09-04 東京エレクトロン株式会社 ＳｉＯ２膜のエッチング方法
JP2773530B2 (ja) 1992-04-15 1998-07-09 日本電気株式会社 半導体装置の製造方法
JP2792335B2 (ja) 1992-05-27 1998-09-03 日本電気株式会社 半導体装置の製造方法
KR100293830B1 (ko) 1992-06-22 2001-09-17 리차드 에이치. 로브그렌 플라즈마 처리 쳄버내의 잔류물 제거를 위한 플라즈마 정결방법
US5252178A (en) 1992-06-24 1993-10-12 Texas Instruments Incorporated Multi-zone plasma processing method and apparatus
US5286297A (en) 1992-06-24 1994-02-15 Texas Instruments Incorporated Multi-electrode plasma processing apparatus
JP3688726B2 (ja) 1992-07-17 2005-08-31 株式会社東芝 半導体装置の製造方法
US5380560A (en) 1992-07-28 1995-01-10 International Business Machines Corporation Palladium sulfate solution for the selective seeding of the metal interconnections on polyimide dielectrics for electroless metal deposition
US5248371A (en) 1992-08-13 1993-09-28 General Signal Corporation Hollow-anode glow discharge apparatus
US5292370A (en) 1992-08-14 1994-03-08 Martin Marietta Energy Systems, Inc. Coupled microwave ECR and radio-frequency plasma source for plasma processing
US5271972A (en) 1992-08-17 1993-12-21 Applied Materials, Inc. Method for depositing ozone/TEOS silicon oxide films of reduced surface sensitivity
US5326427A (en) * 1992-09-11 1994-07-05 Lsi Logic Corporation Method of selectively etching titanium-containing materials on a semiconductor wafer using remote plasma generation
US5306530A (en) 1992-11-23 1994-04-26 Associated Universities, Inc. Method for producing high quality thin layer films on substrates
JP2809018B2 (ja) 1992-11-26 1998-10-08 日本電気株式会社 半導体装置およびその製造方法
US5382311A (en) 1992-12-17 1995-01-17 Tokyo Electron Limited Stage having electrostatic chuck and plasma processing apparatus using same
US5500249A (en) 1992-12-22 1996-03-19 Applied Materials, Inc. Uniform tungsten silicide films produced by chemical vapor deposition
US5756402A (en) 1992-12-28 1998-05-26 Kabushiki Kaisha Toshiba Method of etching silicon nitride film
US5624582A (en) 1993-01-21 1997-04-29 Vlsi Technology, Inc. Optimization of dry etching through the control of helium backside pressure
US5345999A (en) 1993-03-17 1994-09-13 Applied Materials, Inc. Method and apparatus for cooling semiconductor wafers
US5302233A (en) 1993-03-19 1994-04-12 Micron Semiconductor, Inc. Method for shaping features of a semiconductor structure using chemical mechanical planarization (CMP)
JP3236111B2 (ja) 1993-03-31 2001-12-10 キヤノン株式会社 プラズマ処理装置及び処理方法
US5800686A (en) 1993-04-05 1998-09-01 Applied Materials, Inc. Chemical vapor deposition chamber with substrate edge protection
KR0142150B1 (ko) 1993-04-09 1998-07-15 윌리엄 티. 엘리스 붕소 질화물을 에칭하기 위한 방법
US5416048A (en) 1993-04-16 1995-05-16 Micron Semiconductor, Inc. Method to slope conductor profile prior to dielectric deposition to improve dielectric step-coverage
EP0628644B1 (en) 1993-05-27 2003-04-02 Applied Materials, Inc. Improvements in or relating to susceptors suitable for use in chemical vapour deposition devices
US5591269A (en) 1993-06-24 1997-01-07 Tokyo Electron Limited Vacuum processing apparatus
US5413670A (en) 1993-07-08 1995-05-09 Air Products And Chemicals, Inc. Method for plasma etching or cleaning with diluted NF3
US5560779A (en) 1993-07-12 1996-10-01 Olin Corporation Apparatus for synthesizing diamond films utilizing an arc plasma
WO1995002900A1 (en) 1993-07-15 1995-01-26 Astarix, Inc. Aluminum-palladium alloy for initiation of electroless plating
DE69421465T2 (de) 1993-07-30 2000-02-10 Applied Materials, Inc. Verfahren zur Ablagerung von Silzium-Nitrid auf Siliziumoberflächen
US5483920A (en) 1993-08-05 1996-01-16 Board Of Governors Of Wayne State University Method of forming cubic boron nitride films
US5685946A (en) 1993-08-11 1997-11-11 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices
US5468597A (en) 1993-08-25 1995-11-21 Shipley Company, L.L.C. Selective metallization process
US5614055A (en) 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
US5865896A (en) 1993-08-27 1999-02-02 Applied Materials, Inc. High density plasma CVD reactor with combined inductive and capacitive coupling
US5384284A (en) 1993-10-01 1995-01-24 Micron Semiconductor, Inc. Method to form a low resistant bond pad interconnect
SE501888C2 (sv) 1993-10-18 1995-06-12 Ladislav Bardos En metod och en apparat för generering av en urladdning i egna ångor från en radiofrekvenselektrod för kontinuerlig självförstoftning av elektroden
JPH07130713A (ja) 1993-11-04 1995-05-19 Fujitsu Ltd ダウンフローエッチング装置
JPH07161703A (ja) 1993-12-03 1995-06-23 Ricoh Co Ltd 半導体装置の製造方法
US5505816A (en) 1993-12-16 1996-04-09 International Business Machines Corporation Etching of silicon dioxide selectively to silicon nitride and polysilicon
JPH07193214A (ja) 1993-12-27 1995-07-28 Mitsubishi Electric Corp バイアホール及びその形成方法
US5415890A (en) 1994-01-03 1995-05-16 Eaton Corporation Modular apparatus and method for surface treatment of parts with liquid baths
US5403434A (en) 1994-01-06 1995-04-04 Texas Instruments Incorporated Low-temperature in-situ dry cleaning process for semiconductor wafer
US5399237A (en) * 1994-01-27 1995-03-21 Applied Materials, Inc. Etching titanium nitride using carbon-fluoride and carbon-oxide gas
US5451259A (en) 1994-02-17 1995-09-19 Krogh; Ole D. ECR plasma source for remote processing
US5439553A (en) 1994-03-30 1995-08-08 Penn State Research Foundation Controlled etching of oxides via gas phase reactions
EP0680072B1 (en) 1994-04-28 2003-10-08 Applied Materials, Inc. A method of operating a high density plasma CVD reactor with combined inductive and capacitive coupling
US5468342A (en) 1994-04-28 1995-11-21 Cypress Semiconductor Corp. Method of etching an oxide layer
US6110838A (en) 1994-04-29 2000-08-29 Texas Instruments Incorporated Isotropic polysilicon plus nitride stripping
US5531835A (en) 1994-05-18 1996-07-02 Applied Materials, Inc. Patterned susceptor to reduce electrostatic force in a CVD chamber
US5665640A (en) 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US5628829A (en) 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
US5580421A (en) 1994-06-14 1996-12-03 Fsi International Apparatus for surface conditioning
US5767373A (en) 1994-06-16 1998-06-16 Novartis Finance Corporation Manipulation of protoporphyrinogen oxidase enzyme activity in eukaryotic organisms
EP0697467A1 (en) 1994-07-21 1996-02-21 Applied Materials, Inc. Method and apparatus for cleaning a deposition chamber
US5563105A (en) 1994-09-30 1996-10-08 International Business Machines Corporation PECVD method of depositing fluorine doped oxide using a fluorine precursor containing a glass-forming element
JPH08148470A (ja) 1994-11-21 1996-06-07 Sanyo Electric Co Ltd 半導体装置の製造方法
TW344897B (en) 1994-11-30 1998-11-11 At&T Tcorporation A process for forming gate oxides possessing different thicknesses on a semiconductor substrate
US5558717A (en) 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
US5772770A (en) 1995-01-27 1998-06-30 Kokusai Electric Co, Ltd. Substrate processing apparatus
JPH08279495A (ja) 1995-02-07 1996-10-22 Seiko Epson Corp プラズマ処理装置及びその方法
US5571576A (en) 1995-02-10 1996-11-05 Watkins-Johnson Method of forming a fluorinated silicon oxide layer using plasma chemical vapor deposition
US6039851A (en) 1995-03-22 2000-03-21 Micron Technology, Inc. Reactive sputter faceting of silicon dioxide to enhance gap fill of spaces between metal lines
US5571577A (en) 1995-04-07 1996-11-05 Board Of Trustees Operating Michigan State University Method and apparatus for plasma treatment of a surface
JP3386287B2 (ja) 1995-05-08 2003-03-17 堀池 靖浩 プラズマエッチング装置
US20010028922A1 (en) 1995-06-07 2001-10-11 Sandhu Gurtej S. High throughput ILD fill process for high aspect ratio gap fill
JP3599204B2 (ja) 1995-06-08 2004-12-08 アネルバ株式会社 Ｃｖｄ装置
JP2814370B2 (ja) 1995-06-18 1998-10-22 東京エレクトロン株式会社 プラズマ処理装置
US6197364B1 (en) 1995-08-22 2001-03-06 International Business Machines Corporation Production of electroless Co(P) with designed coercivity
US5755859A (en) 1995-08-24 1998-05-26 International Business Machines Corporation Cobalt-tin alloys and their applications for devices, chip interconnections and packaging
US6053982A (en) 1995-09-01 2000-04-25 Asm America, Inc. Wafer support system
US6228751B1 (en) 1995-09-08 2001-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US5719085A (en) 1995-09-29 1998-02-17 Intel Corporation Shallow trench isolation technique
US5716506A (en) 1995-10-06 1998-02-10 Board Of Trustees Of The University Of Illinois Electrochemical sensors for gas detection
US5635086A (en) 1995-10-10 1997-06-03 The Esab Group, Inc. Laser-plasma arc metal cutting apparatus
JPH09106899A (ja) 1995-10-11 1997-04-22 Anelva Corp プラズマｃｖｄ装置及び方法並びにドライエッチング装置及び方法
US5910340A (en) 1995-10-23 1999-06-08 C. Uyemura & Co., Ltd. Electroless nickel plating solution and method
US6015724A (en) 1995-11-02 2000-01-18 Semiconductor Energy Laboratory Co. Manufacturing method of a semiconductor device
US5648125A (en) 1995-11-16 1997-07-15 Cane; Frank N. Electroless plating process for the manufacture of printed circuit boards
US5599740A (en) 1995-11-16 1997-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Deposit-etch-deposit ozone/teos insulator layer method
JP4420986B2 (ja) 1995-11-21 2010-02-24 株式会社東芝 シャロウ・トレンチ分離半導体基板及びその製造方法
JPH09153481A (ja) 1995-11-30 1997-06-10 Sumitomo Metal Ind Ltd プラズマ処理装置
US5846598A (en) 1995-11-30 1998-12-08 International Business Machines Corporation Electroless plating of metallic features on nonmetallic or semiconductor layer without extraneous plating
US5756400A (en) 1995-12-08 1998-05-26 Applied Materials, Inc. Method and apparatus for cleaning by-products from plasma chamber surfaces
US5733816A (en) 1995-12-13 1998-03-31 Micron Technology, Inc. Method for depositing a tungsten layer on silicon
US6261637B1 (en) 1995-12-15 2001-07-17 Enthone-Omi, Inc. Use of palladium immersion deposition to selectively initiate electroless plating on Ti and W alloys for wafer fabrication
US6065424A (en) 1995-12-19 2000-05-23 Cornell Research Foundation, Inc. Electroless deposition of metal films with spray processor
US5883012A (en) 1995-12-21 1999-03-16 Motorola, Inc. Method of etching a trench into a semiconductor substrate
US5679606A (en) 1995-12-27 1997-10-21 Taiwan Semiconductor Manufacturing Company, Ltd. method of forming inter-metal-dielectric structure
WO1997024761A1 (en) 1995-12-27 1997-07-10 Lam Research Corporation Methods and apparatus for filling trenches in a semiconductor wafer
KR100260957B1 (ko) 1995-12-28 2000-07-01 츠치야 히로오 박판형상의 기판 이송방법 및 이송장치
US6191026B1 (en) 1996-01-09 2001-02-20 Applied Materials, Inc. Method for submicron gap filling on a semiconductor substrate
US5674787A (en) 1996-01-16 1997-10-07 Sematech, Inc. Selective electroless copper deposited interconnect plugs for ULSI applications
US5891513A (en) 1996-01-16 1999-04-06 Cornell Research Foundation Electroless CU deposition on a barrier layer by CU contact displacement for ULSI applications
US5824599A (en) 1996-01-16 1998-10-20 Cornell Research Foundation, Inc. Protected encapsulation of catalytic layer for electroless copper interconnect
US5872052A (en) 1996-02-12 1999-02-16 Micron Technology, Inc. Planarization using plasma oxidized amorphous silicon
US5648175A (en) 1996-02-14 1997-07-15 Applied Materials, Inc. Chemical vapor deposition reactor system and integrated circuit
US6004884A (en) 1996-02-15 1999-12-21 Lam Research Corporation Methods and apparatus for etching semiconductor wafers
US5656093A (en) 1996-03-08 1997-08-12 Applied Materials, Inc. Wafer spacing mask for a substrate support chuck and method of fabricating same
US5951601A (en) 1996-03-25 1999-09-14 Lesinski; S. George Attaching an implantable hearing aid microactuator
US5858876A (en) 1996-04-01 1999-01-12 Chartered Semiconductor Manufacturing, Ltd. Simultaneous deposit and etch method for forming a void-free and gap-filling insulator layer upon a patterned substrate layer
US5712185A (en) 1996-04-23 1998-01-27 United Microelectronics Method for forming shallow trench isolation
US5843847A (en) 1996-04-29 1998-12-01 Applied Materials, Inc. Method for etching dielectric layers with high selectivity and low microloading
US6176667B1 (en) 1996-04-30 2001-01-23 Applied Materials, Inc. Multideck wafer processing system
US6313035B1 (en) 1996-05-31 2001-11-06 Micron Technology, Inc. Chemical vapor deposition using organometallic precursors
US6048798A (en) 1996-06-05 2000-04-11 Lam Research Corporation Apparatus for reducing process drift in inductive coupled plasma etching such as oxide layer
US5820723A (en) 1996-06-05 1998-10-13 Lam Research Corporation Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US5846883A (en) 1996-07-10 1998-12-08 Cvc, Inc. Method for multi-zone high-density inductively-coupled plasma generation
US5993916A (en) 1996-07-12 1999-11-30 Applied Materials, Inc. Method for substrate processing with improved throughput and yield
US5846332A (en) 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
US6170428B1 (en) 1996-07-15 2001-01-09 Applied Materials, Inc. Symmetric tunable inductively coupled HDP-CVD reactor
US5781693A (en) 1996-07-24 1998-07-14 Applied Materials, Inc. Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween
US20010012700A1 (en) 1998-12-15 2001-08-09 Klaus F. Schuegraf Semiconductor processing methods of chemical vapor depositing sio2 on a substrate
US5661093A (en) 1996-09-12 1997-08-26 Applied Materials, Inc. Method for the stabilization of halogen-doped films through the use of multiple sealing layers
US5888906A (en) 1996-09-16 1999-03-30 Micron Technology, Inc. Plasmaless dry contact cleaning method using interhalogen compounds
US5747373A (en) 1996-09-24 1998-05-05 Taiwan Semiconductor Manufacturing Company Ltd. Nitride-oxide sidewall spacer for salicide formation
US5846375A (en) 1996-09-26 1998-12-08 Micron Technology, Inc. Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment
US5904827A (en) 1996-10-15 1999-05-18 Reynolds Tech Fabricators, Inc. Plating cell with rotary wiper and megasonic transducer
US5951776A (en) 1996-10-25 1999-09-14 Applied Materials, Inc. Self aligning lift mechanism
KR100237825B1 (ko) 1996-11-05 2000-01-15 윤종용 반도체장치 제조설비의 페디스탈
US5804259A (en) 1996-11-07 1998-09-08 Applied Materials, Inc. Method and apparatus for depositing a multilayered low dielectric constant film
US5935334A (en) 1996-11-13 1999-08-10 Applied Materials, Inc. Substrate processing apparatus with bottom-mounted remote plasma system
US5939831A (en) 1996-11-13 1999-08-17 Applied Materials, Inc. Methods and apparatus for pre-stabilized plasma generation for microwave clean applications
US5812403A (en) 1996-11-13 1998-09-22 Applied Materials, Inc. Methods and apparatus for cleaning surfaces in a substrate processing system
US5882786A (en) 1996-11-15 1999-03-16 C3, Inc. Gemstones formed of silicon carbide with diamond coating
US5844195A (en) 1996-11-18 1998-12-01 Applied Materials, Inc. Remote plasma source
US5855681A (en) 1996-11-18 1999-01-05 Applied Materials, Inc. Ultra high throughput wafer vacuum processing system
US6152070A (en) 1996-11-18 2000-11-28 Applied Materials, Inc. Tandem process chamber
US5830805A (en) 1996-11-18 1998-11-03 Cornell Research Foundation Electroless deposition equipment or apparatus and method of performing electroless deposition
US5695810A (en) 1996-11-20 1997-12-09 Cornell Research Foundation, Inc. Use of cobalt tungsten phosphide as a barrier material for copper metallization
FR2756663B1 (fr) 1996-12-04 1999-02-26 Berenguer Marc Procede de traitement d'un substrat semi-conducteur comprenant une etape de traitement de surface
US5951896A (en) 1996-12-04 1999-09-14 Micro C Technologies, Inc. Rapid thermal processing heater technology and method of use
US6312554B1 (en) 1996-12-05 2001-11-06 Applied Materials, Inc. Apparatus and method for controlling the ratio of reactive to non-reactive ions in a semiconductor wafer processing chamber
JPH10172792A (ja) 1996-12-05 1998-06-26 Tokyo Electron Ltd プラズマ処理装置
US5843538A (en) 1996-12-09 1998-12-01 John L. Raymond Method for electroless nickel plating of metal substrates
US6120640A (en) 1996-12-19 2000-09-19 Applied Materials, Inc. Boron carbide parts and coatings in a plasma reactor
US5953635A (en) 1996-12-19 1999-09-14 Intel Corporation Interlayer dielectric with a composite dielectric stack
US5948702A (en) * 1996-12-19 1999-09-07 Texas Instruments Incorporated Selective removal of TixNy
US5913140A (en) 1996-12-23 1999-06-15 Lam Research Corporation Method for reduction of plasma charging damage during chemical vapor deposition
KR100234539B1 (ko) 1996-12-24 1999-12-15 윤종용 반도체장치 제조용 식각 장치
US5955037A (en) 1996-12-31 1999-09-21 Atmi Ecosys Corporation Effluent gas stream treatment system having utility for oxidation treatment of semiconductor manufacturing effluent gases
DE19700231C2 (de) 1997-01-07 2001-10-04 Geesthacht Gkss Forschung Vorrichtung zum Filtern und Trennen von Strömungsmedien
US5882424A (en) 1997-01-21 1999-03-16 Applied Materials, Inc. Plasma cleaning of a CVD or etch reactor using a low or mixed frequency excitation field
US5913147A (en) 1997-01-21 1999-06-15 Advanced Micro Devices, Inc. Method for fabricating copper-aluminum metallization
JPH10223608A (ja) 1997-02-04 1998-08-21 Sony Corp 半導体装置の製造方法
US5800621A (en) 1997-02-10 1998-09-01 Applied Materials, Inc. Plasma source for HDP-CVD chamber
US6035101A (en) 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
US6013584A (en) 1997-02-19 2000-01-11 Applied Materials, Inc. Methods and apparatus for forming HDP-CVD PSG film used for advanced pre-metal dielectric layer applications
US6190233B1 (en) 1997-02-20 2001-02-20 Applied Materials, Inc. Method and apparatus for improving gap-fill capability using chemical and physical etchbacks
US5990000A (en) 1997-02-20 1999-11-23 Applied Materials, Inc. Method and apparatus for improving gap-fill capability using chemical and physical etchbacks
US6479373B2 (en) 1997-02-20 2002-11-12 Infineon Technologies Ag Method of structuring layers with a polysilicon layer and an overlying metal or metal silicide layer using a three step etching process with fluorine, chlorine, bromine containing gases
US6059643A (en) 1997-02-21 2000-05-09 Aplex, Inc. Apparatus and method for polishing a flat surface using a belted polishing pad
US5789300A (en) 1997-02-25 1998-08-04 Advanced Micro Devices, Inc. Method of making IGFETs in densely and sparsely populated areas of a substrate
KR100295518B1 (ko) 1997-02-25 2001-11-30 아끼구사 나오유끼 질화실리콘층의에칭방법및반도체장치의제조방법
TW418461B (en) 1997-03-07 2001-01-11 Tokyo Electron Ltd Plasma etching device
US5850105A (en) 1997-03-21 1998-12-15 Advanced Micro Devices, Inc. Substantially planar semiconductor topography using dielectrics and chemical mechanical polish
TW376547B (en) 1997-03-27 1999-12-11 Matsushita Electric Ind Co Ltd Method and apparatus for plasma processing
US6030666A (en) 1997-03-31 2000-02-29 Lam Research Corporation Method for microwave plasma substrate heating
US6017414A (en) 1997-03-31 2000-01-25 Lam Research Corporation Method of and apparatus for detecting and controlling in situ cleaning time of vacuum processing chambers
US5786276A (en) 1997-03-31 1998-07-28 Applied Materials, Inc. Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of CH3F or CH2F2 and CF4 and O2
JPH10284360A (ja) 1997-04-02 1998-10-23 Hitachi Ltd 基板温度制御装置及び方法
US5968610A (en) 1997-04-02 1999-10-19 United Microelectronics Corp. Multi-step high density plasma chemical vapor deposition process
US5866483A (en) 1997-04-04 1999-02-02 Applied Materials, Inc. Method for anisotropically etching tungsten using SF6, CHF3, and N2
US6174450B1 (en) 1997-04-16 2001-01-16 Lam Research Corporation Methods and apparatus for controlling ion energy and plasma density in a plasma processing system
US6149828A (en) 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
US6204200B1 (en) 1997-05-05 2001-03-20 Texas Instruments Incorporated Process scheme to form controlled airgaps between interconnect lines to reduce capacitance
US5969422A (en) 1997-05-15 1999-10-19 Advanced Micro Devices, Inc. Plated copper interconnect structure
US5838055A (en) 1997-05-29 1998-11-17 International Business Machines Corporation Trench sidewall patterned by vapor phase etching
US6189483B1 (en) 1997-05-29 2001-02-20 Applied Materials, Inc. Process kit
US6083344A (en) 1997-05-29 2000-07-04 Applied Materials, Inc. Multi-zone RF inductively coupled source configuration
US6136685A (en) 1997-06-03 2000-10-24 Applied Materials, Inc. High deposition rate recipe for low dielectric constant films
US5937323A (en) 1997-06-03 1999-08-10 Applied Materials, Inc. Sequencing of the recipe steps for the optimal low-k HDP-CVD processing
US6706334B1 (en) 1997-06-04 2004-03-16 Tokyo Electron Limited Processing method and apparatus for removing oxide film
US5872058A (en) 1997-06-17 1999-02-16 Novellus Systems, Inc. High aspect ratio gapfill process by using HDP
US5885749A (en) 1997-06-20 1999-03-23 Clear Logic, Inc. Method of customizing integrated circuits by selective secondary deposition of layer interconnect material
US5933757A (en) 1997-06-23 1999-08-03 Lsi Logic Corporation Etch process selective to cobalt silicide for formation of integrated circuit structures
US6150628A (en) 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6518155B1 (en) 1997-06-30 2003-02-11 Intel Corporation Device structure and method for reducing silicide encroachment
US6184121B1 (en) 1997-07-10 2001-02-06 International Business Machines Corporation Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the same
US5944049A (en) 1997-07-15 1999-08-31 Applied Materials, Inc. Apparatus and method for regulating a pressure in a chamber
JPH1136076A (ja) 1997-07-16 1999-02-09 Tokyo Electron Ltd Ｃｖｄ成膜装置およびｃｖｄ成膜方法
US6090212A (en) 1997-08-15 2000-07-18 Micro C Technologies, Inc. Substrate platform for a semiconductor substrate during rapid high temperature processing and method of supporting a substrate
US5814365A (en) 1997-08-15 1998-09-29 Micro C Technologies, Inc. Reactor and method of processing a semiconductor substate
US6007635A (en) 1997-11-26 1999-12-28 Micro C Technologies, Inc. Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing
US5926737A (en) 1997-08-19 1999-07-20 Tokyo Electron Limited Use of TiCl4 etchback process during integrated CVD-Ti/TiN wafer processing
US6364957B1 (en) 1997-10-09 2002-04-02 Applied Materials, Inc. Support assembly with thermal expansion compensation
US6688375B1 (en) 1997-10-14 2004-02-10 Applied Materials, Inc. Vacuum processing system having improved substrate heating and cooling
JP3874911B2 (ja) 1997-10-15 2007-01-31 株式会社Ｎｅｏｍａｘマテリアル 微小プラスチック球へのめっき方法
GB9722028D0 (en) 1997-10-17 1997-12-17 Shipley Company Ll C Plating of polymers
US6379575B1 (en) 1997-10-21 2002-04-30 Applied Materials, Inc. Treatment of etching chambers using activated cleaning gas
US6136693A (en) 1997-10-27 2000-10-24 Chartered Semiconductor Manufacturing Ltd. Method for planarized interconnect vias using electroless plating and CMP
US6013191A (en) 1997-10-27 2000-01-11 Advanced Refractory Technologies, Inc. Method of polishing CVD diamond films by oxygen plasma
US6536449B1 (en) 1997-11-17 2003-03-25 Mattson Technology Inc. Downstream surface cleaning process
US6063712A (en) 1997-11-25 2000-05-16 Micron Technology, Inc. Oxide etch and method of etching
US5849639A (en) 1997-11-26 1998-12-15 Lucent Technologies Inc. Method for removing etching residues and contaminants
US6077780A (en) 1997-12-03 2000-06-20 Advanced Micro Devices, Inc. Method for filling high aspect ratio openings of an integrated circuit to minimize electromigration failure
US6143476A (en) 1997-12-12 2000-11-07 Applied Materials Inc Method for high temperature etching of patterned layers using an organic mask stack
US5976327A (en) 1997-12-12 1999-11-02 Applied Materials, Inc. Step coverage and overhang improvement by pedestal bias voltage modulation
US6083844A (en) * 1997-12-22 2000-07-04 Lam Research Corporation Techniques for etching an oxide layer
US6406759B1 (en) 1998-01-08 2002-06-18 The University Of Tennessee Research Corporation Remote exposure of workpieces using a recirculated plasma
JPH11204442A (ja) 1998-01-12 1999-07-30 Tokyo Electron Ltd 枚葉式の熱処理装置
US6140234A (en) 1998-01-20 2000-10-31 International Business Machines Corporation Method to selectively fill recesses with conductive metal
US6635578B1 (en) 1998-02-09 2003-10-21 Applied Materials, Inc Method of operating a dual chamber reactor with neutral density decoupled from ion density
US5932077A (en) 1998-02-09 1999-08-03 Reynolds Tech Fabricators, Inc. Plating cell with horizontal product load mechanism
US6054379A (en) 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
US6627532B1 (en) 1998-02-11 2003-09-30 Applied Materials, Inc. Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition
US6340435B1 (en) 1998-02-11 2002-01-22 Applied Materials, Inc. Integrated low K dielectrics and etch stops
US6197688B1 (en) 1998-02-12 2001-03-06 Motorola Inc. Interconnect structure in a semiconductor device and method of formation
US6171661B1 (en) 1998-02-25 2001-01-09 Applied Materials, Inc. Deposition of copper with increased adhesion
US6892669B2 (en) 1998-02-26 2005-05-17 Anelva Corporation CVD apparatus
JP4151862B2 (ja) 1998-02-26 2008-09-17 キヤノンアネルバ株式会社 Ｃｖｄ装置
US6177222B1 (en) 1998-03-12 2001-01-23 Xerox Corporation Coated photographic papers
US6551939B2 (en) 1998-03-17 2003-04-22 Anneal Corporation Plasma surface treatment method and resulting device
US5920792A (en) 1998-03-19 1999-07-06 Winbond Electronics Corp High density plasma enhanced chemical vapor deposition process in combination with chemical mechanical polishing process for preparation and planarization of intemetal dielectric layers
US6197181B1 (en) 1998-03-20 2001-03-06 Semitool, Inc. Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece
US6565729B2 (en) 1998-03-20 2003-05-20 Semitool, Inc. Method for electrochemically depositing metal on a semiconductor workpiece
US6194038B1 (en) 1998-03-20 2001-02-27 Applied Materials, Inc. Method for deposition of a conformal layer on a substrate
US6602434B1 (en) 1998-03-27 2003-08-05 Applied Materials, Inc. Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process window
US6395150B1 (en) 1998-04-01 2002-05-28 Novellus Systems, Inc. Very high aspect ratio gapfill using HDP
WO1999052135A1 (en) 1998-04-02 1999-10-14 Applied Materials, Inc. Method for etching low k dielectrics
US6117245A (en) 1998-04-08 2000-09-12 Applied Materials, Inc. Method and apparatus for controlling cooling and heating fluids for a gas distribution plate
US6113771A (en) 1998-04-21 2000-09-05 Applied Materials, Inc. Electro deposition chemistry
US6416647B1 (en) 1998-04-21 2002-07-09 Applied Materials, Inc. Electro-chemical deposition cell for face-up processing of single semiconductor substrates
US6179924B1 (en) 1998-04-28 2001-01-30 Applied Materials, Inc. Heater for use in substrate processing apparatus to deposit tungsten
US6093594A (en) 1998-04-29 2000-07-25 Advanced Micro Devices, Inc. CMOS optimization method utilizing sacrificial sidewall spacer
US6030881A (en) 1998-05-05 2000-02-29 Novellus Systems, Inc. High throughput chemical vapor deposition process capable of filling high aspect ratio structures
US6218288B1 (en) 1998-05-11 2001-04-17 Micron Technology, Inc. Multiple step methods for forming conformal layers
US6007785A (en) 1998-05-20 1999-12-28 Academia Sinica Apparatus for efficient ozone generation
DE69835276T2 (de) 1998-05-22 2007-07-12 Applied Materials, Inc., Santa Clara Verfahren zur Herstellung einer selbst-planarisierten dielektrischen Schicht für eine seichte Grabenisolation
US6086677A (en) 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
KR100296137B1 (ko) 1998-06-16 2001-08-07 박종섭 보호막으로서고밀도플라즈마화학기상증착에의한절연막을갖는반도체소자제조방법
JP2000012514A (ja) 1998-06-19 2000-01-14 Hitachi Ltd 後処理方法
US6147009A (en) 1998-06-29 2000-11-14 International Business Machines Corporation Hydrogenated oxidized silicon carbon material
US6562128B1 (en) 2001-11-28 2003-05-13 Seh America, Inc. In-situ post epitaxial treatment process
EP1112125B1 (en) 1998-06-30 2006-01-25 Semitool, Inc. Metallization structures for microelectronic applications and process for forming the structures
US6037018A (en) 1998-07-01 2000-03-14 Taiwan Semiconductor Maufacturing Company Shallow trench isolation filled by high density plasma chemical vapor deposition
US6248429B1 (en) 1998-07-06 2001-06-19 Micron Technology, Inc. Metallized recess in a substrate
JP2000026975A (ja) 1998-07-09 2000-01-25 Komatsu Ltd 表面処理装置
KR100265866B1 (ko) 1998-07-11 2000-12-01 황철주 반도체 제조장치
US6063683A (en) 1998-07-27 2000-05-16 Acer Semiconductor Manufacturing, Inc. Method of fabricating a self-aligned crown-shaped capacitor for high density DRAM cells
US6436816B1 (en) 1998-07-31 2002-08-20 Industrial Technology Research Institute Method of electroless plating copper on nitride barrier
US6074954A (en) 1998-08-31 2000-06-13 Applied Materials, Inc Process for control of the shape of the etch front in the etching of polysilicon
US6383951B1 (en) 1998-09-03 2002-05-07 Micron Technology, Inc. Low dielectric constant material for integrated circuit fabrication
US6440863B1 (en) 1998-09-04 2002-08-27 Taiwan Semiconductor Manufacturing Company Plasma etch method for forming patterned oxygen containing plasma etchable layer
US6165912A (en) 1998-09-17 2000-12-26 Cfmt, Inc. Electroless metal deposition of electronic components in an enclosable vessel
US6037266A (en) 1998-09-28 2000-03-14 Taiwan Semiconductor Manufacturing Company Method for patterning a polysilicon gate with a thin gate oxide in a polysilicon etcher
JP3725708B2 (ja) 1998-09-29 2005-12-14 株式会社東芝 半導体装置
US6277733B1 (en) 1998-10-05 2001-08-21 Texas Instruments Incorporated Oxygen-free, dry plasma process for polymer removal
JP3764594B2 (ja) 1998-10-12 2006-04-12 株式会社日立製作所 プラズマ処理方法
US6180523B1 (en) 1998-10-13 2001-01-30 Industrial Technology Research Institute Copper metallization of USLI by electroless process
US6228758B1 (en) 1998-10-14 2001-05-08 Advanced Micro Devices, Inc. Method of making dual damascene conductive interconnections and integrated circuit device comprising same
US6251802B1 (en) 1998-10-19 2001-06-26 Micron Technology, Inc. Methods of forming carbon-containing layers
US6107199A (en) 1998-10-24 2000-08-22 International Business Machines Corporation Method for improving the morphology of refractory metal thin films
JP3064268B2 (ja) 1998-10-29 2000-07-12 アプライド マテリアルズ インコーポレイテッド 成膜方法及び装置
US6176198B1 (en) 1998-11-02 2001-01-23 Applied Materials, Inc. Apparatus and method for depositing low K dielectric materials
US6462371B1 (en) 1998-11-24 2002-10-08 Micron Technology Inc. Films doped with carbon for use in integrated circuit technology
US6203863B1 (en) 1998-11-27 2001-03-20 United Microelectronics Corp. Method of gap filling
US6258220B1 (en) 1998-11-30 2001-07-10 Applied Materials, Inc. Electro-chemical deposition system
US6228233B1 (en) 1998-11-30 2001-05-08 Applied Materials, Inc. Inflatable compliant bladder assembly
US6251236B1 (en) 1998-11-30 2001-06-26 Applied Materials, Inc. Cathode contact ring for electrochemical deposition
US6015747A (en) 1998-12-07 2000-01-18 Advanced Micro Device Method of metal/polysilicon gate formation in a field effect transistor
US6242349B1 (en) 1998-12-09 2001-06-05 Advanced Micro Devices, Inc. Method of forming copper/copper alloy interconnection with reduced electromigration
US6364954B2 (en) 1998-12-14 2002-04-02 Applied Materials, Inc. High temperature chemical vapor deposition chamber
EP1014434B1 (de) 1998-12-24 2008-03-26 ATMEL Germany GmbH Verfahren zum anisotropen plasmachemischen Trockenätzen von Siliziumnitrid-Schichten mittels eines Fluor-enthaltenden Gasgemisches
KR20000044928A (ko) 1998-12-30 2000-07-15 김영환 반도체 소자의 트랜치 형성 방법
DE19901210A1 (de) 1999-01-14 2000-07-27 Siemens Ag Halbleiterbauelement und Verfahren zu dessen Herstellung
US6499425B1 (en) 1999-01-22 2002-12-31 Micron Technology, Inc. Quasi-remote plasma processing method and apparatus
TW428256B (en) 1999-01-25 2001-04-01 United Microelectronics Corp Structure of conducting-wire layer and its fabricating method
JP3330554B2 (ja) 1999-01-27 2002-09-30 松下電器産業株式会社 エッチング方法
US6245669B1 (en) 1999-02-05 2001-06-12 Taiwan Semiconductor Manufacturing Company High selectivity Si-rich SiON etch-stop layer
US6010962A (en) 1999-02-12 2000-01-04 Taiwan Semiconductor Manufacturing Company Copper chemical-mechanical-polishing (CMP) dishing
US6245670B1 (en) 1999-02-19 2001-06-12 Advanced Micro Devices, Inc. Method for filling a dual damascene opening having high aspect ratio to minimize electromigration failure
US6291282B1 (en) 1999-02-26 2001-09-18 Texas Instruments Incorporated Method of forming dual metal gate structures or CMOS devices
US6136163A (en) 1999-03-05 2000-10-24 Applied Materials, Inc. Apparatus for electro-chemical deposition with thermal anneal chamber
US6312995B1 (en) 1999-03-08 2001-11-06 Advanced Micro Devices, Inc. MOS transistor with assisted-gates and ultra-shallow “Psuedo” source and drain extensions for ultra-large-scale integration
US6197705B1 (en) 1999-03-18 2001-03-06 Chartered Semiconductor Manufacturing Ltd. Method of silicon oxide and silicon glass films deposition
US6797189B2 (en) 1999-03-25 2004-09-28 Hoiman (Raymond) Hung Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon
US6238582B1 (en) 1999-03-30 2001-05-29 Veeco Instruments, Inc. Reactive ion beam etching method and a thin film head fabricated using the method
US6144099A (en) 1999-03-30 2000-11-07 Advanced Micro Devices, Inc. Semiconductor metalization barrier
JP2000290777A (ja) 1999-04-07 2000-10-17 Tokyo Electron Ltd ガス処理装置、バッフル部材、及びガス処理方法
US6263830B1 (en) 1999-04-12 2001-07-24 Matrix Integrated Systems, Inc. Microwave choke for remote plasma generator
US6099697A (en) 1999-04-13 2000-08-08 Applied Materials, Inc. Method of and apparatus for restoring a support surface in a semiconductor wafer processing system
US6110836A (en) 1999-04-22 2000-08-29 Applied Materials, Inc. Reactive plasma etch cleaning of high aspect ratio openings
US6541671B1 (en) 2002-02-13 2003-04-01 The Regents Of The University Of California Synthesis of 2H- and 13C-substituted dithanes
JP3099066B1 (ja) 1999-05-07 2000-10-16 東京工業大学長 薄膜構造体の製造方法
JP3482904B2 (ja) 1999-05-10 2004-01-06 松下電器産業株式会社 プラズマ処理方法及び装置
US7091605B2 (en) 2001-09-21 2006-08-15 Eastman Kodak Company Highly moisture-sensitive electronic device element and method for fabrication
EP1198610A4 (en) 1999-05-14 2004-04-07 Univ California PLASMA POWER GENERATING DEVICE WITH A LARGE PRESSURE RANGE AT LOW TEMPERATURES
US6129829A (en) 1999-05-14 2000-10-10 Thompson; Donald E. Electrostatic filter for dielectric fluid
JP2000331993A (ja) 1999-05-19 2000-11-30 Mitsubishi Electric Corp プラズマ処理装置
US6323128B1 (en) 1999-05-26 2001-11-27 International Business Machines Corporation Method for forming Co-W-P-Au films
JP3320685B2 (ja) 1999-06-02 2002-09-03 株式会社半導体先端テクノロジーズ 微細パターン形成方法
US6174812B1 (en) 1999-06-08 2001-01-16 United Microelectronics Corp. Copper damascene technology for ultra large scale integration circuits
US20020033233A1 (en) 1999-06-08 2002-03-21 Stephen E. Savas Icp reactor having a conically-shaped plasma-generating section
US6821571B2 (en) 1999-06-18 2004-11-23 Applied Materials Inc. Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
US6161576A (en) 1999-06-23 2000-12-19 Mks Instruments, Inc. Integrated turbo pump and control valve system
US6110530A (en) 1999-06-25 2000-08-29 Applied Materials, Inc. CVD method of depositing copper films by using improved organocopper precursor blend
FR2795555B1 (fr) 1999-06-28 2002-12-13 France Telecom Procede de fabrication d'un dispositif semi-conducteur comprenant un empilement forme alternativement de couches de silicium et de couches de materiau dielectrique
US6277752B1 (en) 1999-06-28 2001-08-21 Taiwan Semiconductor Manufacturing Company Multiple etch method for forming residue free patterned hard mask layer
US6415736B1 (en) 1999-06-30 2002-07-09 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6245192B1 (en) 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6258223B1 (en) 1999-07-09 2001-07-10 Applied Materials, Inc. In-situ electroless copper seed layer enhancement in an electroplating system
US6516815B1 (en) 1999-07-09 2003-02-11 Applied Materials, Inc. Edge bead removal/spin rinse dry (EBR/SRD) module
US6352081B1 (en) 1999-07-09 2002-03-05 Applied Materials, Inc. Method of cleaning a semiconductor device processing chamber after a copper etch process
US6351013B1 (en) 1999-07-13 2002-02-26 Advanced Micro Devices, Inc. Low-K sub spacer pocket formation for gate capacitance reduction
US6342733B1 (en) 1999-07-27 2002-01-29 International Business Machines Corporation Reduced electromigration and stressed induced migration of Cu wires by surface coating
US6281135B1 (en) 1999-08-05 2001-08-28 Axcelis Technologies, Inc. Oxygen free plasma stripping process
US6237527B1 (en) 1999-08-06 2001-05-29 Axcelis Technologies, Inc. System for improving energy purity and implant consistency, and for minimizing charge accumulation of an implanted substrate
US6235643B1 (en) 1999-08-10 2001-05-22 Applied Materials, Inc. Method for etching a trench having rounded top and bottom corners in a silicon substrate
DE60041341D1 (de) 1999-08-17 2009-02-26 Tokyo Electron Ltd Gepulstes plasmabehandlungsverfahren und vorrichtung
JP4220075B2 (ja) 1999-08-20 2009-02-04 東京エレクトロン株式会社 成膜方法および成膜装置
US6322716B1 (en) 1999-08-30 2001-11-27 Cypress Semiconductor Corp. Method for conditioning a plasma etch chamber
US6375748B1 (en) 1999-09-01 2002-04-23 Applied Materials, Inc. Method and apparatus for preventing edge deposition
US6441492B1 (en) 1999-09-10 2002-08-27 James A. Cunningham Diffusion barriers for copper interconnect systems
US6548414B2 (en) 1999-09-14 2003-04-15 Infineon Technologies Ag Method of plasma etching thin films of difficult to dry etch materials
US6503843B1 (en) 1999-09-21 2003-01-07 Applied Materials, Inc. Multistep chamber cleaning and film deposition process using a remote plasma that also enhances film gap fill
US6432819B1 (en) 1999-09-27 2002-08-13 Applied Materials, Inc. Method and apparatus of forming a sputtered doped seed layer
US6287643B1 (en) 1999-09-30 2001-09-11 Novellus Systems, Inc. Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor
US6153935A (en) 1999-09-30 2000-11-28 International Business Machines Corporation Dual etch stop/diffusion barrier for damascene interconnects
US6321587B1 (en) 1999-10-15 2001-11-27 Radian International Llc Solid state fluorine sensor system and method
US6423284B1 (en) 1999-10-18 2002-07-23 Advanced Technology Materials, Inc. Fluorine abatement using steam injection in oxidation treatment of semiconductor manufacturing effluent gases
US6364949B1 (en) 1999-10-19 2002-04-02 Applied Materials, Inc. 300 mm CVD chamber design for metal-organic thin film deposition
KR100338768B1 (ko) 1999-10-25 2002-05-30 윤종용 산화막 제거방법 및 산화막 제거를 위한 반도체 제조 장치
US20010041444A1 (en) 1999-10-29 2001-11-15 Jeffrey A. Shields Tin contact barc for tungsten polished contacts
DE29919142U1 (de) 1999-10-30 2001-03-08 Agrodyn Hochspannungstechnik GmbH, 33803 Steinhagen Plasmadüse
US6551924B1 (en) 1999-11-02 2003-04-22 International Business Machines Corporation Post metalization chem-mech polishing dielectric etch
KR20010051575A (ko) 1999-11-09 2001-06-25 조셉 제이. 스위니 살리사이드 처리를 위한 화학적 플라즈마 세정
JP3366301B2 (ja) 1999-11-10 2003-01-14 日本電気株式会社 プラズマｃｖｄ装置
US8114245B2 (en) 1999-11-26 2012-02-14 Tadahiro Ohmi Plasma etching device
US6599842B2 (en) 1999-11-29 2003-07-29 Applied Materials, Inc. Method for rounding corners and removing damaged outer surfaces of a trench
TW484170B (en) 1999-11-30 2002-04-21 Applied Materials Inc Integrated modular processing platform
US6342453B1 (en) 1999-12-03 2002-01-29 Applied Materials, Inc. Method for CVD process control for enhancing device performance
TW514996B (en) 1999-12-10 2002-12-21 Tokyo Electron Ltd Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
US6277763B1 (en) 1999-12-16 2001-08-21 Applied Materials, Inc. Plasma processing of tungsten using a gas mixture comprising a fluorinated gas and oxygen
AU2577001A (en) 1999-12-22 2001-07-03 Tokyo Electron Limited Method and system for reducing damage to substrates during plasma processing with a resonator source
US6350697B1 (en) 1999-12-22 2002-02-26 Lam Research Corporation Method of cleaning and conditioning plasma reaction chamber
US6534809B2 (en) 1999-12-22 2003-03-18 Agilent Technologies, Inc. Hardmask designs for dry etching FeRAM capacitor stacks
US6238513B1 (en) 1999-12-28 2001-05-29 International Business Machines Corporation Wafer lift assembly
KR20010058774A (ko) 1999-12-30 2001-07-06 박종섭 반도체 소자의 제조 방법
KR100767762B1 (ko) 2000-01-18 2007-10-17 에이에스엠 저펜 가부시기가이샤 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치
US6477980B1 (en) 2000-01-20 2002-11-12 Applied Materials, Inc. Flexibly suspended gas distribution manifold for plasma chamber
US6772827B2 (en) 2000-01-20 2004-08-10 Applied Materials, Inc. Suspended gas distribution manifold for plasma chamber
US6656831B1 (en) 2000-01-26 2003-12-02 Applied Materials, Inc. Plasma-enhanced chemical vapor deposition of a metal nitride layer
US6494959B1 (en) 2000-01-28 2002-12-17 Applied Materials, Inc. Process and apparatus for cleaning a silicon surface
JP3723712B2 (ja) 2000-02-10 2005-12-07 株式会社日立国際電気 基板処理装置及び基板処理方法
US6743473B1 (en) 2000-02-16 2004-06-01 Applied Materials, Inc. Chemical vapor deposition of barriers from novel precursors
US6573030B1 (en) 2000-02-17 2003-06-03 Applied Materials, Inc. Method for depositing an amorphous carbon layer
US6350320B1 (en) 2000-02-22 2002-02-26 Applied Materials, Inc. Heater for processing chamber
US6319766B1 (en) 2000-02-22 2001-11-20 Applied Materials, Inc. Method of tantalum nitride deposition by tantalum oxide densification
US6391788B1 (en) 2000-02-25 2002-05-21 Applied Materials, Inc. Two etchant etch method
US6958098B2 (en) 2000-02-28 2005-10-25 Applied Materials, Inc. Semiconductor wafer support lift-pin assembly
JP3979791B2 (ja) 2000-03-08 2007-09-19 株式会社ルネサステクノロジ 半導体装置およびその製造方法
KR100350056B1 (ko) 2000-03-09 2002-08-24 삼성전자 주식회사 다마신 게이트 공정에서 자기정렬콘택패드 형성 방법
US6900596B2 (en) 2002-07-09 2005-05-31 Applied Materials, Inc. Capacitively coupled plasma reactor with uniform radial distribution of plasma
US6527968B1 (en) 2000-03-27 2003-03-04 Applied Materials Inc. Two-stage self-cleaning silicon etch process
JP3433721B2 (ja) 2000-03-28 2003-08-04 ティーディーケイ株式会社 ドライエッチング方法及び微細加工方法
JP4056195B2 (ja) 2000-03-30 2008-03-05 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
AU2001247685A1 (en) 2000-03-30 2001-10-15 Tokyo Electron Limited Method of and apparatus for tunable gas injection in a plasma processing system
DE10016340C1 (de) 2000-03-31 2001-12-06 Promos Technologies Inc Verfahren zur Herstellung von flaschenförmigen Tiefgräben zur Verwendung in Halbleitervorrichtungen
US6558564B1 (en) 2000-04-05 2003-05-06 Applied Materials Inc. Plasma energy control by inducing plasma instability
JP2001355074A (ja) 2000-04-10 2001-12-25 Sony Corp 無電解メッキ処理方法およびその装置
US7892974B2 (en) 2000-04-11 2011-02-22 Cree, Inc. Method of forming vias in silicon carbide and resulting devices and circuits
US6762129B2 (en) 2000-04-19 2004-07-13 Matsushita Electric Industrial Co., Ltd. Dry etching method, fabrication method for semiconductor device, and dry etching apparatus
JP2001308023A (ja) 2000-04-21 2001-11-02 Tokyo Electron Ltd 熱処理装置及び方法
US6387207B1 (en) 2000-04-28 2002-05-14 Applied Materials, Inc. Integration of remote plasma generator with semiconductor processing chamber
US6458718B1 (en) 2000-04-28 2002-10-01 Asm Japan K.K. Fluorine-containing materials and processes
KR100367662B1 (ko) 2000-05-02 2003-01-10 주식회사 셈테크놀러지 하이퍼서멀 중성입자 발생 장치 및 이를 채용하는 중성입자 처리 장치
JP3662472B2 (ja) 2000-05-09 2005-06-22 エム・エフエスアイ株式会社 基板表面の処理方法
EP1435654A3 (en) 2000-05-10 2004-07-14 Ibiden Co., Ltd. Electrostatic chuck
US6679981B1 (en) 2000-05-11 2004-01-20 Applied Materials, Inc. Inductive plasma loop enhancing magnetron sputtering
CN1327493C (zh) 2000-05-17 2007-07-18 东京毅力科创株式会社 处理装置部件的装配机构及其装配方法
US6335261B1 (en) 2000-05-31 2002-01-01 International Business Machines Corporation Directional CVD process with optimized etchback
US6729081B2 (en) 2000-06-09 2004-05-04 United Solar Systems Corporation Self-adhesive photovoltaic module
US6603269B1 (en) 2000-06-13 2003-08-05 Applied Materials, Inc. Resonant chamber applicator for remote plasma source
US6509623B2 (en) 2000-06-15 2003-01-21 Newport Fab, Llc Microelectronic air-gap structures and methods of forming the same
US6391753B1 (en) 2000-06-20 2002-05-21 Advanced Micro Devices, Inc. Process for forming gate conductors
US6645550B1 (en) 2000-06-22 2003-11-11 Applied Materials, Inc. Method of treating a substrate
US6427623B2 (en) 2000-06-23 2002-08-06 Anelva Corporation Chemical vapor deposition system
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
JP4371543B2 (ja) * 2000-06-29 2009-11-25 日本電気株式会社 リモートプラズマｃｖｄ装置及び膜形成方法
US6303418B1 (en) 2000-06-30 2001-10-16 Chartered Semiconductor Manufacturing Ltd. Method of fabricating CMOS devices featuring dual gate structures and a high dielectric constant gate insulator layer
DE10032607B4 (de) 2000-07-07 2004-08-12 Leo Elektronenmikroskopie Gmbh Teilchenstrahlgerät mit einer im Ultrahochvakuum zu betreibenden Teilchenquelle und kaskadenförmige Pumpanordnung für ein solches Teilchenstrahlgerät
US6440870B1 (en) 2000-07-12 2002-08-27 Applied Materials, Inc. Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
US6794311B2 (en) 2000-07-14 2004-09-21 Applied Materials Inc. Method and apparatus for treating low k dielectric layers to reduce diffusion
KR100366623B1 (ko) 2000-07-18 2003-01-09 삼성전자 주식회사 반도체 기판 또는 ｌｃｄ 기판의 세정방법
US6764958B1 (en) 2000-07-28 2004-07-20 Applied Materials Inc. Method of depositing dielectric films
US6677242B1 (en) 2000-08-12 2004-01-13 Applied Materials Inc. Integrated shallow trench isolation approach
US6446572B1 (en) 2000-08-18 2002-09-10 Tokyo Electron Limited Embedded plasma source for plasma density improvement
US6800830B2 (en) 2000-08-18 2004-10-05 Hitachi Kokusai Electric, Inc. Chemistry for boron diffusion barrier layer and method of application in semiconductor device fabrication
US6335288B1 (en) 2000-08-24 2002-01-01 Applied Materials, Inc. Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD
US6372657B1 (en) 2000-08-31 2002-04-16 Micron Technology, Inc. Method for selective etching of oxides
US6465366B1 (en) 2000-09-12 2002-10-15 Applied Materials, Inc. Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers
JP2002100578A (ja) 2000-09-25 2002-04-05 Crystage Co Ltd 薄膜形成装置
JP4717295B2 (ja) 2000-10-04 2011-07-06 株式会社半導体エネルギー研究所 ドライエッチング装置及びエッチング方法
US6461974B1 (en) 2000-10-06 2002-10-08 Lam Research Corporation High temperature tungsten etching process
DK200001497A (da) 2000-10-08 2002-04-09 Scanavo As Opbevaringsindretning for en databærer
KR100375102B1 (ko) 2000-10-18 2003-03-08 삼성전자주식회사 반도체 장치의 제조에서 화학 기상 증착 방법 및 이를수행하기 위한 장치
US6403491B1 (en) 2000-11-01 2002-06-11 Applied Materials, Inc. Etch method using a dielectric etch chamber with expanded process window
US6610362B1 (en) 2000-11-20 2003-08-26 Intel Corporation Method of forming a carbon doped oxide layer on a substrate
KR100382725B1 (ko) 2000-11-24 2003-05-09 삼성전자주식회사 클러스터화된 플라즈마 장치에서의 반도체소자의 제조방법
US6291348B1 (en) 2000-11-30 2001-09-18 Advanced Micro Devices, Inc. Method of forming Cu-Ca-O thin films on Cu surfaces in a chemical solution and semiconductor device thereby formed
AUPR179500A0 (en) 2000-11-30 2000-12-21 Saintech Pty Limited Ion source
US6544340B2 (en) 2000-12-08 2003-04-08 Applied Materials, Inc. Heater with detachable ceramic top plate
US6448537B1 (en) 2000-12-11 2002-09-10 Eric Anton Nering Single-wafer process chamber thermal convection processes
US6533910B2 (en) 2000-12-29 2003-03-18 Lam Research Corporation Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof
US6500772B2 (en) 2001-01-08 2002-12-31 International Business Machines Corporation Methods and materials for depositing films on semiconductor substrates
US20020124867A1 (en) 2001-01-08 2002-09-12 Apl Co., Ltd. Apparatus and method for surface cleaning using plasma
FR2819341B1 (fr) 2001-01-11 2003-06-27 St Microelectronics Sa Procede d'integration d'une cellule dram
US6879981B2 (en) 2001-01-16 2005-04-12 Corigin Ltd. Sharing live data with a non cooperative DBMS
JP4644943B2 (ja) 2001-01-23 2011-03-09 東京エレクトロン株式会社 処理装置
US6743732B1 (en) 2001-01-26 2004-06-01 Taiwan Semiconductor Manufacturing Company Organic low K dielectric etch with NH3 chemistry
JP2002222934A (ja) 2001-01-29 2002-08-09 Nec Corp 半導体装置およびその製造方法
US6893969B2 (en) 2001-02-12 2005-05-17 Lam Research Corporation Use of ammonia for etching organic low-k dielectrics
US6537733B2 (en) 2001-02-23 2003-03-25 Applied Materials, Inc. Method of depositing low dielectric constant silicon carbide layers
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6348407B1 (en) 2001-03-15 2002-02-19 Chartered Semiconductor Manufacturing Inc. Method to improve adhesion of organic dielectrics in dual damascene interconnects
JP3924483B2 (ja) 2001-03-19 2007-06-06 アイピーエス リミテッド 化学気相蒸着装置
JP5013353B2 (ja) 2001-03-28 2012-08-29 隆 杉野 成膜方法及び成膜装置
US7084070B1 (en) 2001-03-30 2006-08-01 Lam Research Corporation Treatment for corrosion in substrate processing
US6670278B2 (en) 2001-03-30 2003-12-30 Lam Research Corporation Method of plasma etching of silicon carbide
US20020177321A1 (en) 2001-03-30 2002-11-28 Li Si Yi Plasma etching of silicon carbide
FR2823032B1 (fr) 2001-04-03 2003-07-11 St Microelectronics Sa Resonateur electromecanique a poutre vibrante
JP3707394B2 (ja) 2001-04-06 2005-10-19 ソニー株式会社 無電解メッキ方法
US20030019428A1 (en) 2001-04-28 2003-01-30 Applied Materials, Inc. Chemical vapor deposition chamber
US6914009B2 (en) 2001-05-07 2005-07-05 Applied Materials Inc Method of making small transistor lengths
US6740601B2 (en) 2001-05-11 2004-05-25 Applied Materials Inc. HDP-CVD deposition process for filling high aspect ratio gaps
JP4720019B2 (ja) 2001-05-18 2011-07-13 東京エレクトロン株式会社 冷却機構及び処理装置
US20020197823A1 (en) 2001-05-18 2002-12-26 Yoo Jae-Yoon Isolation method for semiconductor device
US6717189B2 (en) 2001-06-01 2004-04-06 Ebara Corporation Electroless plating liquid and semiconductor device
CN1516895A (zh) 2001-06-14 2004-07-28 马特森技术公司 用于铜互连的阻挡层增强工艺
US6573606B2 (en) 2001-06-14 2003-06-03 International Business Machines Corporation Chip to wiring interface with single metal alloy layer applied to surface of copper interconnect
US6506291B2 (en) 2001-06-14 2003-01-14 Applied Materials, Inc. Substrate support with multilevel heat transfer mechanism
US20060191637A1 (en) 2001-06-21 2006-08-31 John Zajac Etching Apparatus and Process with Thickness and Uniformity Control
US6685803B2 (en) 2001-06-22 2004-02-03 Applied Materials, Inc. Plasma treatment of processing gases
US6770166B1 (en) 2001-06-29 2004-08-03 Lam Research Corp. Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor
JP2003019433A (ja) 2001-07-06 2003-01-21 Sekisui Chem Co Ltd 放電プラズマ処理装置及びそれを用いた処理方法
KR100403630B1 (ko) 2001-07-07 2003-10-30 삼성전자주식회사 고밀도 플라즈마를 이용한 반도체 장치의 층간 절연막 형성방법
US6531377B2 (en) 2001-07-13 2003-03-11 Infineon Technologies Ag Method for high aspect ratio gap fill using sequential HDP-CVD
US6596599B1 (en) 2001-07-16 2003-07-22 Taiwan Semiconductor Manufacturing Company Gate stack for high performance sub-micron CMOS devices
US20030029715A1 (en) 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
US6846745B1 (en) 2001-08-03 2005-01-25 Novellus Systems, Inc. High-density plasma process for filling high aspect ratio structures
US6596654B1 (en) 2001-08-24 2003-07-22 Novellus Systems, Inc. Gap fill for high aspect ratio structures
JP3914452B2 (ja) 2001-08-07 2007-05-16 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
US6984288B2 (en) 2001-08-08 2006-01-10 Lam Research Corporation Plasma processor in plasma confinement region within a vacuum chamber
TW554069B (en) 2001-08-10 2003-09-21 Ebara Corp Plating device and method
EP1418619A4 (en) 2001-08-13 2010-09-08 Ebara Corp SEMICONDUCTOR COMPONENTS AND MANUFACTURING METHOD THEREFOR AND PLATING SOLUTION
JP2003059914A (ja) 2001-08-21 2003-02-28 Hitachi Kokusai Electric Inc プラズマ処理装置
US20030038305A1 (en) 2001-08-21 2003-02-27 Wasshuber Christoph A. Method for manufacturing and structure of transistor with low-k spacer
US6762127B2 (en) 2001-08-23 2004-07-13 Yves Pierre Boiteux Etch process for dielectric materials comprising oxidized organo silane materials
US6753506B2 (en) 2001-08-23 2004-06-22 Axcelis Technologies System and method of fast ambient switching for rapid thermal processing
US20030129106A1 (en) 2001-08-29 2003-07-10 Applied Materials, Inc. Semiconductor processing using an efficiently coupled gas source
US6796314B1 (en) 2001-09-07 2004-09-28 Novellus Systems, Inc. Using hydrogen gas in a post-etch radio frequency-plasma contact cleaning process
US20030054608A1 (en) 2001-09-17 2003-03-20 Vanguard International Semiconductor Corporation Method for forming shallow trench isolation in semiconductor device
US6555467B2 (en) 2001-09-28 2003-04-29 Sharp Laboratories Of America, Inc. Method of making air gaps copper interconnect
US6656837B2 (en) 2001-10-11 2003-12-02 Applied Materials, Inc. Method of eliminating photoresist poisoning in damascene applications
AU2002301252B2 (en) 2001-10-12 2007-12-20 Bayer Aktiengesellschaft Photovoltaic modules with a thermoplastic hot-melt adhesive layer and a process for their production
US20030072639A1 (en) 2001-10-17 2003-04-17 Applied Materials, Inc. Substrate support
JP3759895B2 (ja) 2001-10-24 2006-03-29 松下電器産業株式会社 エッチング方法
US7780785B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
KR100443121B1 (ko) 2001-11-29 2004-08-04 삼성전자주식회사 반도체 공정의 수행 방법 및 반도체 공정 장치
US6794290B1 (en) 2001-12-03 2004-09-21 Novellus Systems, Inc. Method of chemical modification of structure topography
KR100641762B1 (ko) 2001-12-07 2006-11-06 동경 엘렉트론 주식회사 절연막의 질화 방법, 반도체 장치 및 반도체 장치의 제조방법, 기판 처리 장치 및 기판 처리 방법
US6905968B2 (en) 2001-12-12 2005-06-14 Applied Materials, Inc. Process for selectively etching dielectric layers
AU2002353145A1 (en) 2001-12-13 2003-06-30 Applied Materials, Inc. Self-aligned contact etch with high sensitivity to nitride shoulder
US6890850B2 (en) 2001-12-14 2005-05-10 Applied Materials, Inc. Method of depositing dielectric materials in damascene applications
US6605874B2 (en) 2001-12-19 2003-08-12 Intel Corporation Method of making semiconductor device using an interconnect
AU2002366943A1 (en) 2001-12-20 2003-07-09 Tokyo Electron Limited Method and apparatus comprising a magnetic filter for plasma processing a workpiece
US20030116087A1 (en) 2001-12-21 2003-06-26 Nguyen Anh N. Chamber hardware design for titanium nitride atomic layer deposition
US20030116439A1 (en) 2001-12-21 2003-06-26 International Business Machines Corporation Method for forming encapsulated metal interconnect structures in semiconductor integrated circuit devices
US20030124842A1 (en) 2001-12-27 2003-07-03 Applied Materials, Inc. Dual-gas delivery system for chemical vapor deposition processes
KR100484258B1 (ko) 2001-12-27 2005-04-22 주식회사 하이닉스반도체 반도체 소자 제조 방법
US6677247B2 (en) 2002-01-07 2004-01-13 Applied Materials Inc. Method of increasing the etch selectivity of a contact sidewall to a preclean etchant
US6827815B2 (en) 2002-01-15 2004-12-07 Applied Materials, Inc. Showerhead assembly for a processing chamber
JP2003217898A (ja) 2002-01-16 2003-07-31 Sekisui Chem Co Ltd 放電プラズマ処理装置
US6869880B2 (en) 2002-01-24 2005-03-22 Applied Materials, Inc. In situ application of etch back for improved deposition into high-aspect-ratio features
US6866746B2 (en) 2002-01-26 2005-03-15 Applied Materials, Inc. Clamshell and small volume chamber with fixed substrate support
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US7138014B2 (en) 2002-01-28 2006-11-21 Applied Materials, Inc. Electroless deposition apparatus
TWI239794B (en) 2002-01-30 2005-09-11 Alps Electric Co Ltd Plasma processing apparatus and method
US7226504B2 (en) 2002-01-31 2007-06-05 Sharp Laboratories Of America, Inc. Method to form thick relaxed SiGe layer with trench structure
US6632325B2 (en) 2002-02-07 2003-10-14 Applied Materials, Inc. Article for use in a semiconductor processing chamber and method of fabricating same
US6821348B2 (en) 2002-02-14 2004-11-23 3M Innovative Properties Company In-line deposition processes for circuit fabrication
JP3921234B2 (ja) 2002-02-28 2007-05-30 キヤノンアネルバ株式会社 表面処理装置及びその製造方法
US20060252265A1 (en) 2002-03-06 2006-11-09 Guangxiang Jin Etching high-kappa dielectric materials with good high-kappa foot control and silicon recess control
US20030168174A1 (en) 2002-03-08 2003-09-11 Foree Michael Todd Gas cushion susceptor system
US7256370B2 (en) 2002-03-15 2007-08-14 Steed Technology, Inc. Vacuum thermal annealer
JP3813562B2 (ja) 2002-03-15 2006-08-23 富士通株式会社 半導体装置及びその製造方法
US6913651B2 (en) 2002-03-22 2005-07-05 Blue29, Llc Apparatus and method for electroless deposition of materials on semiconductor substrates
US6541397B1 (en) 2002-03-29 2003-04-01 Applied Materials, Inc. Removable amorphous carbon CMP stop
US6843858B2 (en) 2002-04-02 2005-01-18 Applied Materials, Inc. Method of cleaning a semiconductor processing chamber
US20030190426A1 (en) 2002-04-03 2003-10-09 Deenesh Padhi Electroless deposition method
US6921556B2 (en) 2002-04-12 2005-07-26 Asm Japan K.K. Method of film deposition using single-wafer-processing type CVD
US6616967B1 (en) 2002-04-15 2003-09-09 Texas Instruments Incorporated Method to achieve continuous hydrogen saturation in sparingly used electroless nickel plating process
US6897532B1 (en) 2002-04-15 2005-05-24 Cypress Semiconductor Corp. Magnetic tunneling junction configuration and a method for making the same
US7013834B2 (en) 2002-04-19 2006-03-21 Nordson Corporation Plasma treatment system
KR100448714B1 (ko) 2002-04-24 2004-09-13 삼성전자주식회사 다층 나노라미네이트 구조를 갖는 반도체 장치의 절연막및 그의 형성방법
US6528409B1 (en) 2002-04-29 2003-03-04 Advanced Micro Devices, Inc. Interconnect structure formed in porous dielectric material with minimized degradation and electromigration
US6908862B2 (en) 2002-05-03 2005-06-21 Applied Materials, Inc. HDP-CVD dep/etch/dep process for improved deposition into high aspect ratio features
TW538497B (en) 2002-05-16 2003-06-21 Nanya Technology Corp Method to form a bottle-shaped trench
US6825051B2 (en) 2002-05-17 2004-11-30 Asm America, Inc. Plasma etch resistant coating and process
JP2003347278A (ja) 2002-05-23 2003-12-05 Hitachi Kokusai Electric Inc 基板処理装置、及び半導体装置の製造方法
US6500728B1 (en) 2002-05-24 2002-12-31 Taiwan Semiconductor Manufacturing Company Shallow trench isolation (STI) module to improve contact etch process window
US20030224217A1 (en) 2002-05-31 2003-12-04 Applied Materials, Inc. Metal nitride formation
KR100434110B1 (ko) 2002-06-04 2004-06-04 삼성전자주식회사 반도체 장치의 제조방법
US20050208215A1 (en) 2002-06-14 2005-09-22 Yuji Eguchi Oxide film forming method and oxide film forming apparatus
US6924191B2 (en) 2002-06-20 2005-08-02 Applied Materials, Inc. Method for fabricating a gate structure of a field effect transistor
DE10229037A1 (de) 2002-06-28 2004-01-29 Robert Bosch Gmbh Vorrichtung und Verfahren zur Erzeugung von Chlortrifluorid und Anlage zur Ätzung von Halbleitersubstraten mit dieser Vorrichtung
US20040072446A1 (en) 2002-07-02 2004-04-15 Applied Materials, Inc. Method for fabricating an ultra shallow junction of a field effect transistor
US6767844B2 (en) 2002-07-03 2004-07-27 Taiwan Semiconductor Manufacturing Co., Ltd Plasma chamber equipped with temperature-controlled focus ring and method of operating
US7357138B2 (en) 2002-07-18 2008-04-15 Air Products And Chemicals, Inc. Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
US7988398B2 (en) 2002-07-22 2011-08-02 Brooks Automation, Inc. Linear substrate transport apparatus
US20060046412A1 (en) 2002-08-06 2006-03-02 Tegal Corporation Method and system for sequential processing in a two-compartment chamber
US6921555B2 (en) 2002-08-06 2005-07-26 Tegal Corporation Method and system for sequential processing in a two-compartment chamber
US20060040055A1 (en) 2002-08-06 2006-02-23 Tegal Corporation Method and system for sequential processing in a two-compartment chamber
US20040058293A1 (en) 2002-08-06 2004-03-25 Tue Nguyen Assembly line processing system
JP3861036B2 (ja) 2002-08-09 2006-12-20 三菱重工業株式会社 プラズマｃｖｄ装置
US7541270B2 (en) 2002-08-13 2009-06-02 Micron Technology, Inc. Methods for forming openings in doped silicon dioxide
US20040033677A1 (en) 2002-08-14 2004-02-19 Reza Arghavani Method and apparatus to prevent lateral oxidation in a transistor utilizing an ultra thin oxygen-diffusion barrier
US6781173B2 (en) 2002-08-29 2004-08-24 Micron Technology, Inc. MRAM sense layer area control
US7223701B2 (en) 2002-09-06 2007-05-29 Intel Corporation In-situ sequential high density plasma deposition and etch processing for gap fill
US6946033B2 (en) 2002-09-16 2005-09-20 Applied Materials Inc. Heated gas distribution plate for a processing chamber
JP3991315B2 (ja) 2002-09-17 2007-10-17 キヤノンアネルバ株式会社 薄膜形成装置及び方法
US7335609B2 (en) 2004-08-27 2008-02-26 Applied Materials, Inc. Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials
KR100500852B1 (ko) 2002-10-10 2005-07-12 최대규 원격 플라즈마 발생기
US6991959B2 (en) 2002-10-10 2006-01-31 Asm Japan K.K. Method of manufacturing silicon carbide film
JP4606713B2 (ja) 2002-10-17 2011-01-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US6699380B1 (en) 2002-10-18 2004-03-02 Applied Materials Inc. Modular electrochemical processing system
US6802944B2 (en) 2002-10-23 2004-10-12 Applied Materials, Inc. High density plasma CVD process for gapfill into high aspect ratio features
US7628897B2 (en) 2002-10-23 2009-12-08 Applied Materials, Inc. Reactive ion etching for semiconductor device feature topography modification
US6853043B2 (en) 2002-11-04 2005-02-08 Applied Materials, Inc. Nitrogen-free antireflective coating for use with photolithographic patterning
JP2004165317A (ja) 2002-11-12 2004-06-10 Renesas Technology Corp 半導体装置およびその製造方法
KR100862658B1 (ko) 2002-11-15 2008-10-10 삼성전자주식회사 반도체 처리 시스템의 가스 주입 장치
US6861332B2 (en) 2002-11-21 2005-03-01 Intel Corporation Air gap interconnect method
US6713873B1 (en) 2002-11-27 2004-03-30 Intel Corporation Adhesion between dielectric materials
KR100898580B1 (ko) 2002-12-07 2009-05-20 주식회사 하이닉스반도체 반도체 소자의 소자분리막 형성방법
US6858532B2 (en) 2002-12-10 2005-02-22 International Business Machines Corporation Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling
JP3838969B2 (ja) 2002-12-17 2006-10-25 沖電気工業株式会社 ドライエッチング方法
DE10260352A1 (de) 2002-12-20 2004-07-15 Infineon Technologies Ag Verfahren zum Herstellen einer Kondensatoranordnung und Kondensatoranordnung
US20040118344A1 (en) 2002-12-20 2004-06-24 Lam Research Corporation System and method for controlling plasma with an adjustable coupling to ground circuit
US6720213B1 (en) 2003-01-15 2004-04-13 International Business Machines Corporation Low-K gate spacers by fluorine implantation
US6808748B2 (en) 2003-01-23 2004-10-26 Applied Materials, Inc. Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology
US7500445B2 (en) 2003-01-27 2009-03-10 Applied Materials, Inc. Method and apparatus for cleaning a CVD chamber
US7316761B2 (en) 2003-02-03 2008-01-08 Applied Materials, Inc. Apparatus for uniformly etching a dielectric layer
US7205248B2 (en) 2003-02-04 2007-04-17 Micron Technology, Inc. Method of eliminating residual carbon from flowable oxide fill
US7078351B2 (en) 2003-02-10 2006-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist intensive patterning and processing
KR101352995B1 (ko) 2003-02-14 2014-01-21 어플라이드 머티어리얼스, 인코포레이티드 수소-함유 라디칼을 이용한 자연 산화물 세정
DE10308870B4 (de) 2003-02-28 2006-07-27 Austriamicrosystems Ag Bipolartransistor mit verbessertem Basis-Emitter-Übergang und Verfahren zur Herstellung
US6913992B2 (en) 2003-03-07 2005-07-05 Applied Materials, Inc. Method of modifying interlayer adhesion
WO2004082007A1 (ja) 2003-03-12 2004-09-23 Tokyo Electron Limited 半導体処理用の基板保持構造及びプラズマ処理装置
US20040182315A1 (en) 2003-03-17 2004-09-23 Tokyo Electron Limited Reduced maintenance chemical oxide removal (COR) processing system
US6951821B2 (en) 2003-03-17 2005-10-04 Tokyo Electron Limited Processing system and method for chemically treating a substrate
KR100789063B1 (ko) 2003-04-11 2007-12-26 호야 가부시키가이샤 크롬계 박막의 에칭방법 및 포토마스크의 제조방법
US7037376B2 (en) 2003-04-11 2006-05-02 Applied Materials Inc. Backflush chamber clean
US7126225B2 (en) 2003-04-15 2006-10-24 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for manufacturing a semiconductor wafer with reduced delamination and peeling
US6942753B2 (en) 2003-04-16 2005-09-13 Applied Materials, Inc. Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
US20040211357A1 (en) 2003-04-24 2004-10-28 Gadgil Pradad N. Method of manufacturing a gap-filled structure of a semiconductor device
US6830624B2 (en) 2003-05-02 2004-12-14 Applied Materials, Inc. Blocker plate by-pass for remote plasma clean
US6903511B2 (en) 2003-05-06 2005-06-07 Zond, Inc. Generation of uniformly-distributed plasma
DE10320472A1 (de) 2003-05-08 2004-12-02 Kolektor D.O.O. Plasmabehandlung zur Reinigung von Kupfer oder Nickel
KR20040096365A (ko) 2003-05-09 2004-11-16 주식회사 하이닉스반도체 반도체소자의 제조방법
US6713835B1 (en) 2003-05-22 2004-03-30 International Business Machines Corporation Method for manufacturing a multi-level interconnect structure
US7081414B2 (en) 2003-05-23 2006-07-25 Applied Materials, Inc. Deposition-selective etch-deposition process for dielectric film gapfill
US7205240B2 (en) 2003-06-04 2007-04-17 Applied Materials, Inc. HDP-CVD multistep gapfill process
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7067432B2 (en) 2003-06-26 2006-06-27 Applied Materials, Inc. Methodology for in-situ and real-time chamber condition monitoring and process recovery during plasma processing
US7151277B2 (en) 2003-07-03 2006-12-19 The Regents Of The University Of California Selective etching of silicon carbide films
JP2005033023A (ja) 2003-07-07 2005-02-03 Sony Corp 半導体装置の製造方法および半導体装置
JP4245996B2 (ja) 2003-07-07 2009-04-02 株式会社荏原製作所 無電解めっきによるキャップ膜の形成方法およびこれに用いる装置
US7368392B2 (en) 2003-07-10 2008-05-06 Applied Materials, Inc. Method of fabricating a gate structure of a field effect transistor having a metal-containing gate electrode
US6995073B2 (en) 2003-07-16 2006-02-07 Intel Corporation Air gap integration
JP3866694B2 (ja) 2003-07-30 2007-01-10 株式会社日立ハイテクノロジーズ Ｌｓｉデバイスのエッチング方法および装置
US7256134B2 (en) 2003-08-01 2007-08-14 Applied Materials, Inc. Selective etching of carbon-doped low-k dielectrics
JP4239750B2 (ja) 2003-08-13 2009-03-18 セイコーエプソン株式会社 マイクロレンズ及びマイクロレンズの製造方法、光学装置、光伝送装置、レーザプリンタ用ヘッド、並びにレーザプリンタ
US20050035455A1 (en) 2003-08-14 2005-02-17 Chenming Hu Device with low-k dielectric in close proximity thereto and its method of fabrication
US7521000B2 (en) 2003-08-28 2009-04-21 Applied Materials, Inc. Process for etching photomasks
US7078312B1 (en) 2003-09-02 2006-07-18 Novellus Systems, Inc. Method for controlling etch process repeatability
US6903031B2 (en) 2003-09-03 2005-06-07 Applied Materials, Inc. In-situ-etch-assisted HDP deposition using SiF4 and hydrogen
US7282244B2 (en) 2003-09-05 2007-10-16 General Electric Company Replaceable plate expanded thermal plasma apparatus and method
US7030034B2 (en) 2003-09-18 2006-04-18 Micron Technology, Inc. Methods of etching silicon nitride substantially selectively relative to an oxide of aluminum
US6967405B1 (en) 2003-09-24 2005-11-22 Yongsik Yu Film for copper diffusion barrier
JP2005101141A (ja) 2003-09-24 2005-04-14 Renesas Technology Corp 半導体集積回路装置およびその製造方法
US7371688B2 (en) 2003-09-30 2008-05-13 Air Products And Chemicals, Inc. Removal of transition metal ternary and/or quaternary barrier materials from a substrate
US7071532B2 (en) 2003-09-30 2006-07-04 International Business Machines Corporation Adjustable self-aligned air gap dielectric for low capacitance wiring
JP4399227B2 (ja) 2003-10-06 2010-01-13 株式会社フジキン チャンバの内圧制御装置及び内圧被制御式チャンバ
TWI351725B (en) 2003-10-06 2011-11-01 Applied Materials Inc Apparatus to improve wafer temperature uniformity
US7581511B2 (en) 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
US7125792B2 (en) 2003-10-14 2006-10-24 Infineon Technologies Ag Dual damascene structure and method
US20070111519A1 (en) 2003-10-15 2007-05-17 Applied Materials, Inc. Integrated electroless deposition system
US7465358B2 (en) 2003-10-15 2008-12-16 Applied Materials, Inc. Measurement techniques for controlling aspects of a electroless deposition process
JP2005129688A (ja) 2003-10-23 2005-05-19 Hitachi Ltd 半導体装置の製造方法
KR100561848B1 (ko) 2003-11-04 2006-03-16 삼성전자주식회사 헬리컬 공진기형 플라즈마 처리 장치
US7709392B2 (en) 2003-11-05 2010-05-04 Taiwan Semiconductor Manufacturing Co., Ltd. Low K dielectric surface damage control
KR100550808B1 (ko) 2003-11-17 2006-02-09 주식회사 에스테크 전자파 차폐 성능이 우수한 다층 구조의 시트 및 그 제조방법
US20050109276A1 (en) 2003-11-25 2005-05-26 Applied Materials, Inc. Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber
US20050112876A1 (en) 2003-11-26 2005-05-26 Chih-Ta Wu Method to form a robust TiCI4 based CVD TiN film
US7202172B2 (en) 2003-12-05 2007-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Microelectronic device having disposable spacer
US7081407B2 (en) 2003-12-16 2006-07-25 Lam Research Corporation Method of preventing damage to porous low-k materials during resist stripping
US6958286B2 (en) 2004-01-02 2005-10-25 International Business Machines Corporation Method of preventing surface roughening during hydrogen prebake of SiGe substrates
US6893967B1 (en) 2004-01-13 2005-05-17 Advanced Micro Devices, Inc. L-shaped spacer incorporating or patterned using amorphous carbon or CVD organic materials
US7361605B2 (en) 2004-01-20 2008-04-22 Mattson Technology, Inc. System and method for removal of photoresist and residues following contact etch with a stop layer present
US20060033678A1 (en) 2004-01-26 2006-02-16 Applied Materials, Inc. Integrated electroless deposition system
US7012027B2 (en) 2004-01-27 2006-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Zirconium oxide and hafnium oxide etching using halogen containing chemicals
US7064078B2 (en) 2004-01-30 2006-06-20 Applied Materials Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme
US7291550B2 (en) 2004-02-13 2007-11-06 Chartered Semiconductor Manufacturing Ltd. Method to form a contact hole
JP4698251B2 (ja) 2004-02-24 2011-06-08 アプライド マテリアルズ インコーポレイテッド 可動又は柔軟なシャワーヘッド取り付け
US20050230350A1 (en) 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US20060051966A1 (en) 2004-02-26 2006-03-09 Applied Materials, Inc. In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber
US7780793B2 (en) 2004-02-26 2010-08-24 Applied Materials, Inc. Passivation layer formation by plasma clean process to reduce native oxide growth
US20070123051A1 (en) 2004-02-26 2007-05-31 Reza Arghavani Oxide etch with nh4-nf3 chemistry
WO2005087974A2 (en) 2004-03-05 2005-09-22 Applied Materials, Inc. Cvd processes for the deposition of amorphous carbon films
US8037896B2 (en) 2004-03-09 2011-10-18 Mks Instruments, Inc. Pressure regulation in remote zones
US7196342B2 (en) 2004-03-10 2007-03-27 Cymer, Inc. Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source
US7682985B2 (en) 2004-03-17 2010-03-23 Lam Research Corporation Dual doped polysilicon and silicon germanium etch
US7109521B2 (en) 2004-03-18 2006-09-19 Cree, Inc. Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls
US7582555B1 (en) 2005-12-29 2009-09-01 Novellus Systems, Inc. CVD flowable gap fill
US7244474B2 (en) 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US7291360B2 (en) 2004-03-26 2007-11-06 Applied Materials, Inc. Chemical vapor deposition plasma process using plural ion shower grids
US7695590B2 (en) 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US7358192B2 (en) 2004-04-08 2008-04-15 Applied Materials, Inc. Method and apparatus for in-situ film stack processing
US7785672B2 (en) 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US7018941B2 (en) 2004-04-21 2006-03-28 Applied Materials, Inc. Post treatment of low k dielectric films
TWI249774B (en) 2004-04-23 2006-02-21 Nanya Technology Corp Forming method of self-aligned contact for semiconductor device
US7115974B2 (en) 2004-04-27 2006-10-03 Taiwan Semiconductor Manfacturing Company, Ltd. Silicon oxycarbide and silicon carbonitride based materials for MOS devices
US7708859B2 (en) 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
US20050266691A1 (en) 2004-05-11 2005-12-01 Applied Materials Inc. Carbon-doped-Si oxide etch using H2 additive in fluorocarbon etch chemistry
US8328939B2 (en) 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US8074599B2 (en) 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
WO2005114749A1 (en) 2004-05-21 2005-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7049200B2 (en) 2004-05-25 2006-05-23 Applied Materials Inc. Method for forming a low thermal budget spacer
US7651583B2 (en) 2004-06-04 2010-01-26 Tokyo Electron Limited Processing system and method for treating a substrate
US7226852B1 (en) 2004-06-10 2007-06-05 Lam Research Corporation Preventing damage to low-k materials during resist stripping
US7253107B2 (en) 2004-06-17 2007-08-07 Asm International N.V. Pressure control system
US7122949B2 (en) 2004-06-21 2006-10-17 Neocera, Inc. Cylindrical electron beam generating/triggering device and method for generation of electrons
US20060005856A1 (en) 2004-06-29 2006-01-12 Applied Materials, Inc. Reduction of reactive gas attack on substrate heater
US8349128B2 (en) 2004-06-30 2013-01-08 Applied Materials, Inc. Method and apparatus for stable plasma processing
US20060000802A1 (en) 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
US7097779B2 (en) 2004-07-06 2006-08-29 Tokyo Electron Limited Processing system and method for chemically treating a TERA layer
JP2006049817A (ja) 2004-07-07 2006-02-16 Showa Denko Kk プラズマ処理方法およびプラズマエッチング方法
US7845309B2 (en) 2004-07-13 2010-12-07 Nordson Corporation Ultra high speed uniform plasma processing system
KR100614648B1 (ko) 2004-07-15 2006-08-23 삼성전자주식회사 반도체 소자 제조에 사용되는 기판 처리 장치
KR100584485B1 (ko) 2004-07-20 2006-05-29 동부일렉트로닉스 주식회사 반도체 소자의 금속 부식 방지 방법
US20060016783A1 (en) 2004-07-22 2006-01-26 Dingjun Wu Process for titanium nitride removal
US7217626B2 (en) 2004-07-26 2007-05-15 Texas Instruments Incorporated Transistor fabrication methods using dual sidewall spacers
US7192863B2 (en) 2004-07-30 2007-03-20 Texas Instruments Incorporated Method of eliminating etch ridges in a dual damascene process
US20060024954A1 (en) 2004-08-02 2006-02-02 Zhen-Cheng Wu Copper damascene barrier and capping layer
KR101309334B1 (ko) 2004-08-02 2013-09-16 비코 인스트루먼츠 인코포레이티드 화학적 기상 증착 반응기용 멀티 가스 분배 인젝터
US20060043066A1 (en) 2004-08-26 2006-03-02 Kamp Thomas A Processes for pre-tapering silicon or silicon-germanium prior to etching shallow trenches
US20060042752A1 (en) 2004-08-30 2006-03-02 Rueger Neal R Plasma processing apparatuses and methods
CN102610481B (zh) 2004-09-01 2016-04-13 朗姆研究公司 用于增加光阻移除率之装置及等离子体灰化方法
US7329576B2 (en) 2004-09-02 2008-02-12 Micron Technology, Inc. Double-sided container capacitors using a sacrificial layer
US7390710B2 (en) 2004-09-02 2008-06-24 Micron Technology, Inc. Protection of tunnel dielectric using epitaxial silicon
US7115525B2 (en) 2004-09-02 2006-10-03 Micron Technology, Inc. Method for integrated circuit fabrication using pitch multiplication
US7148155B1 (en) 2004-10-26 2006-12-12 Novellus Systems, Inc. Sequential deposition/anneal film densification method
US7053003B2 (en) 2004-10-27 2006-05-30 Lam Research Corporation Photoresist conditioning with hydrogen ramping
US20060093756A1 (en) 2004-11-03 2006-05-04 Nagarajan Rajagopalan High-power dielectric seasoning for stable wafer-to-wafer thickness uniformity of dielectric CVD films
US20060097397A1 (en) 2004-11-10 2006-05-11 Russell Stephen W Method for forming a dual layer, low resistance metallization during the formation of a semiconductor device
US7618515B2 (en) 2004-11-15 2009-11-17 Tokyo Electron Limited Focus ring, plasma etching apparatus and plasma etching method
US7256121B2 (en) 2004-12-02 2007-08-14 Texas Instruments Incorporated Contact resistance reduction by new barrier stack process
FR2878913B1 (fr) 2004-12-03 2007-01-19 Cit Alcatel Controle des pressions partielles de gaz pour optimisation de procede
KR20070087196A (ko) 2004-12-21 2007-08-27 어플라이드 머티어리얼스, 인코포레이티드 화학 기상 에칭 챔버로부터 부산물 증착을 제거하기 위한인-시튜 챔버 세정 방법
US20060130971A1 (en) 2004-12-21 2006-06-22 Applied Materials, Inc. Apparatus for generating plasma by RF power
US7365016B2 (en) 2004-12-27 2008-04-29 Dalsa Semiconductor Inc. Anhydrous HF release of process for MEMS devices
US20060148243A1 (en) 2004-12-30 2006-07-06 Jeng-Ho Wang Method for fabricating a dual damascene and polymer removal
US7253123B2 (en) 2005-01-10 2007-08-07 Applied Materials, Inc. Method for producing gate stack sidewall spacers
US20060162661A1 (en) 2005-01-22 2006-07-27 Applied Materials, Inc. Mixing energized and non-energized gases for silicon nitride deposition
US7829243B2 (en) 2005-01-27 2010-11-09 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication
GB0502149D0 (en) 2005-02-02 2005-03-09 Boc Group Inc Method of operating a pumping system
US7341943B2 (en) 2005-02-08 2008-03-11 Taiwan Semiconductor Manufacturing Co., Ltd. Post etch copper cleaning using dry plasma
JP4475136B2 (ja) 2005-02-18 2010-06-09 東京エレクトロン株式会社 処理システム、前処理装置及び記憶媒体
US7344912B1 (en) 2005-03-01 2008-03-18 Spansion Llc Method for patterning electrically conducting poly(phenyl acetylene) and poly(diphenyl acetylene)
JP4506677B2 (ja) 2005-03-11 2010-07-21 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
JP2006261217A (ja) 2005-03-15 2006-09-28 Canon Anelva Corp 薄膜形成方法
US7253118B2 (en) 2005-03-15 2007-08-07 Micron Technology, Inc. Pitch reduced patterns relative to photolithography features
WO2006102318A2 (en) 2005-03-18 2006-09-28 Applied Materials, Inc. Electroless deposition process on a contact containing silicon or silicide
US20060252252A1 (en) 2005-03-18 2006-11-09 Zhize Zhu Electroless deposition processes and compositions for forming interconnects
US20060210723A1 (en) 2005-03-21 2006-09-21 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
KR100610465B1 (ko) 2005-03-25 2006-08-08 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US7442274B2 (en) 2005-03-28 2008-10-28 Tokyo Electron Limited Plasma etching method and apparatus therefor
US7611944B2 (en) 2005-03-28 2009-11-03 Micron Technology, Inc. Integrated circuit fabrication
KR100689826B1 (ko) 2005-03-29 2007-03-08 삼성전자주식회사 불소 함유된 화학적 식각 가스를 사용하는 고밀도 플라즈마화학기상증착 방법들 및 이를 채택하여 반도체 소자를제조하는 방법들
US20060228889A1 (en) 2005-03-31 2006-10-12 Edelberg Erik A Methods of removing resist from substrates in resist stripping chambers
US7288482B2 (en) 2005-05-04 2007-10-30 International Business Machines Corporation Silicon nitride etching methods
KR100745067B1 (ko) 2005-05-18 2007-08-01 주식회사 하이닉스반도체 반도체 소자의 트렌치 소자분리막 및 그 형성방법
US7431856B2 (en) 2005-05-18 2008-10-07 National Research Council Of Canada Nano-tip fabrication by spatially controlled etching
US20060266288A1 (en) 2005-05-27 2006-11-30 Applied Materials, Inc. High plasma utilization for remote plasma clean
JP4853857B2 (ja) 2005-06-15 2012-01-11 東京エレクトロン株式会社 基板の処理方法，コンピュータ読み取り可能な記録媒体及び基板処理装置
JP4554461B2 (ja) 2005-07-26 2010-09-29 株式会社日立ハイテクノロジーズ 半導体装置の製造方法
DE102006038885B4 (de) 2005-08-24 2013-10-10 Wonik Ips Co., Ltd. Verfahren zum Abscheiden einer Ge-Sb-Te-Dünnschicht
US20070056925A1 (en) 2005-09-09 2007-03-15 Lam Research Corporation Selective etch of films with high dielectric constant with H2 addition
US20070071888A1 (en) 2005-09-21 2007-03-29 Arulkumar Shanmugasundram Method and apparatus for forming device features in an integrated electroless deposition system
DE102005047081B4 (de) 2005-09-30 2019-01-31 Robert Bosch Gmbh Verfahren zum plasmalosen Ätzen von Silizium mit dem Ätzgas ClF3 oder XeF2
US8102123B2 (en) 2005-10-04 2012-01-24 Topanga Technologies, Inc. External resonator electrode-less plasma lamp and method of exciting with radio-frequency energy
KR100703014B1 (ko) 2005-10-26 2007-04-06 삼성전자주식회사 실리콘 산화물 식각액 및 이를 이용한 반도체 소자의 제조 방법
US20070099806A1 (en) 2005-10-28 2007-05-03 Stewart Michael P Composition and method for selectively removing native oxide from silicon-containing surfaces
EP1780779A3 (en) 2005-10-28 2008-06-11 Interuniversitair Microelektronica Centrum ( Imec) A plasma for patterning advanced gate stacks
US7884032B2 (en) 2005-10-28 2011-02-08 Applied Materials, Inc. Thin film deposition
US7696101B2 (en) 2005-11-01 2010-04-13 Micron Technology, Inc. Process for increasing feature density during the manufacture of a semiconductor device
CN101448977B (zh) 2005-11-04 2010-12-15 应用材料股份有限公司 用于等离子体增强的原子层沉积的设备和工艺
US20070107750A1 (en) 2005-11-14 2007-05-17 Sawin Herbert H Method of using NF3 for removing surface deposits from the interior of chemical vapor deposition chambers
JP4918778B2 (ja) 2005-11-16 2012-04-18 株式会社日立製作所 半導体集積回路装置の製造方法
US20070117396A1 (en) 2005-11-22 2007-05-24 Dingjun Wu Selective etching of titanium nitride with xenon difluoride
US7662723B2 (en) 2005-12-13 2010-02-16 Lam Research Corporation Methods and apparatus for in-situ substrate processing
US7405160B2 (en) 2005-12-13 2008-07-29 Tokyo Electron Limited Method of making semiconductor device
JP2007173383A (ja) 2005-12-20 2007-07-05 Sharp Corp トレンチ素子分離領域の形成方法、窒化シリコン膜ライナーの形成方法、半導体装置の製造方法
US7449538B2 (en) 2005-12-30 2008-11-11 Hynix Semiconductor Inc. Hard mask composition and method for manufacturing semiconductor device
JP2007191792A (ja) 2006-01-19 2007-08-02 Atto Co Ltd ガス分離型シャワーヘッド
US7494545B2 (en) 2006-02-03 2009-02-24 Applied Materials, Inc. Epitaxial deposition process and apparatus
KR100752622B1 (ko) 2006-02-17 2007-08-30 한양대학교 산학협력단 원거리 플라즈마 발생장치
US20070207275A1 (en) 2006-02-21 2007-09-06 Applied Materials, Inc. Enhancement of remote plasma source clean for dielectric films
MX2008011661A (es) 2006-03-16 2008-09-22 Novartis Ag Compuestos organicos heterociclicos para el tratamiento de melanoma en particular.
WO2007112454A2 (en) 2006-03-28 2007-10-04 Stratusys Inc. Apparatus and method for processing substrates using one or more vacuum transfer chamber units
US8343280B2 (en) 2006-03-28 2013-01-01 Tokyo Electron Limited Multi-zone substrate temperature control system and method of operating
US7906032B2 (en) 2006-03-31 2011-03-15 Tokyo Electron Limited Method for conditioning a process chamber
US7780865B2 (en) 2006-03-31 2010-08-24 Applied Materials, Inc. Method to improve the step coverage and pattern loading for dielectric films
JP5042517B2 (ja) 2006-04-10 2012-10-03 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN100539080C (zh) 2006-04-12 2009-09-09 中芯国际集成电路制造(上海)有限公司 通过自对准形成多晶硅浮栅结构的方法
US7297564B1 (en) 2006-05-02 2007-11-20 Sharp Laboratories Of America, Inc. Fabrication of vertical sidewalls on (110) silicon substrates for use in Si/SiGe photodetectors
US7601607B2 (en) 2006-05-15 2009-10-13 Chartered Semiconductor Manufacturing, Ltd. Protruded contact and insertion of inter-layer-dielectric material to match damascene hardmask to improve undercut for low-k interconnects
JP5578389B2 (ja) 2006-05-16 2014-08-27 Ｎｌｔテクノロジー株式会社 積層膜パターン形成方法及びゲート電極形成方法
JP2007311540A (ja) 2006-05-18 2007-11-29 Renesas Technology Corp 半導体装置の製造方法
US20070266946A1 (en) 2006-05-22 2007-11-22 Byung-Chul Choi Semiconductor device manufacturing apparatus and method of using the same
US7790634B2 (en) 2006-05-30 2010-09-07 Applied Materials, Inc Method for depositing and curing low-k films for gapfill and conformal film applications
US20070277734A1 (en) 2006-05-30 2007-12-06 Applied Materials, Inc. Process chamber for dielectric gapfill
US20070281106A1 (en) 2006-05-30 2007-12-06 Applied Materials, Inc. Process chamber for dielectric gapfill
US7825038B2 (en) 2006-05-30 2010-11-02 Applied Materials, Inc. Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
US7932181B2 (en) 2006-06-20 2011-04-26 Lam Research Corporation Edge gas injection for critical dimension uniformity improvement
US7416989B1 (en) 2006-06-30 2008-08-26 Novellus Systems, Inc. Adsorption based material removal process
US7618889B2 (en) 2006-07-18 2009-11-17 Applied Materials, Inc. Dual damascene fabrication with low k materials
KR20080013174A (ko) * 2006-08-07 2008-02-13 주식회사 하이닉스반도체 캐패시터의 스토리지노드 분리 방법
US20080124937A1 (en) 2006-08-16 2008-05-29 Songlin Xu Selective etching method and apparatus
KR100818708B1 (ko) 2006-08-18 2008-04-01 주식회사 하이닉스반도체 표면 세정을 포함하는 반도체소자 제조방법
US20080063810A1 (en) 2006-08-23 2008-03-13 Applied Materials, Inc. In-situ process state monitoring of chamber
US7575007B2 (en) 2006-08-23 2009-08-18 Applied Materials, Inc. Chamber recovery after opening barrier over copper
US8110787B1 (en) 2006-08-23 2012-02-07 ON Semiconductor Trading, Ltd Image sensor with a reflective waveguide
US7452766B2 (en) 2006-08-31 2008-11-18 Micron Technology, Inc. Finned memory cells and the fabrication thereof
US20080075668A1 (en) 2006-09-27 2008-03-27 Goldstein Alan H Security Device Using Reversibly Self-Assembling Systems
CN101153396B (zh) 2006-09-30 2010-06-09 中芯国际集成电路制造(上海)有限公司 等离子刻蚀方法
JP2008103645A (ja) 2006-10-20 2008-05-01 Toshiba Corp 半導体装置の製造方法
US20080099147A1 (en) 2006-10-26 2008-05-01 Nyi Oo Myo Temperature controlled multi-gas distribution assembly
JP2008109043A (ja) 2006-10-27 2008-05-08 Oki Electric Ind Co Ltd 半導体装置の製造方法および半導体装置
US20080102640A1 (en) 2006-10-30 2008-05-01 Applied Materials, Inc. Etching oxide with high selectivity to titanium nitride
US7943005B2 (en) 2006-10-30 2011-05-17 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US7880232B2 (en) 2006-11-01 2011-02-01 Micron Technology, Inc. Processes and apparatus having a semiconductor fin
US7700479B2 (en) 2006-11-06 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Cleaning processes in the formation of integrated circuit interconnect structures
US7939422B2 (en) 2006-12-07 2011-05-10 Applied Materials, Inc. Methods of thin film process
US20080142483A1 (en) 2006-12-07 2008-06-19 Applied Materials, Inc. Multi-step dep-etch-dep high density plasma chemical vapor deposition processes for dielectric gapfills
JP2010512650A (ja) 2006-12-11 2010-04-22 アプライド マテリアルズ インコーポレイテッド 乾燥フォトレジスト除去プロセスと装置
TWM318795U (en) 2006-12-18 2007-09-11 Lighthouse Technology Co Ltd Package structure
WO2008074672A1 (en) 2006-12-20 2008-06-26 Nxp B.V. Improving adhesion of diffusion barrier on cu containing interconnect element
JP5229711B2 (ja) 2006-12-25 2013-07-03 国立大学法人名古屋大学 パターン形成方法、および半導体装置の製造方法
US20080157225A1 (en) 2006-12-29 2008-07-03 Suman Datta SRAM and logic transistors with variable height multi-gate transistor architecture
US7808053B2 (en) 2006-12-29 2010-10-05 Intel Corporation Method, apparatus, and system for flash memory
KR20080063988A (ko) 2007-01-03 2008-07-08 삼성전자주식회사 중성빔을 이용한 식각장치
JP4421618B2 (ja) 2007-01-17 2010-02-24 東京エレクトロン株式会社 フィン型電界効果トランジスタの製造方法
US7728364B2 (en) 2007-01-19 2010-06-01 International Business Machines Corporation Enhanced mobility CMOS transistors with a V-shaped channel with self-alignment to shallow trench isolation
KR100878015B1 (ko) 2007-01-31 2009-01-13 삼성전자주식회사 산화물 제거 방법 및 이를 이용한 트렌치 매립 방법
US20080202892A1 (en) 2007-02-27 2008-08-28 Smith John M Stacked process chambers for substrate vacuum processing tool
KR100853485B1 (ko) 2007-03-19 2008-08-21 주식회사 하이닉스반도체 리세스 게이트를 갖는 반도체 소자의 제조 방법
US20080233709A1 (en) 2007-03-22 2008-09-25 Infineon Technologies North America Corp. Method for removing material from a semiconductor
US7815814B2 (en) 2007-03-23 2010-10-19 Tokyo Electron Limited Method and system for dry etching a metal nitride
JP4988402B2 (ja) 2007-03-30 2012-08-01 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8419854B2 (en) 2007-04-17 2013-04-16 Ulvac, Inc. Film-forming apparatus
JP5135879B2 (ja) 2007-05-21 2013-02-06 富士電機株式会社 炭化珪素半導体装置の製造方法
KR100777043B1 (ko) 2007-05-22 2007-11-16 주식회사 테스 비정질 탄소막 형성 방법 및 이를 이용한 반도체 소자의제조 방법
US8084105B2 (en) 2007-05-23 2011-12-27 Applied Materials, Inc. Method of depositing boron nitride and boron nitride-derived materials
US7807578B2 (en) 2007-06-01 2010-10-05 Applied Materials, Inc. Frequency doubling using spacer mask
US7585716B2 (en) 2007-06-27 2009-09-08 International Business Machines Corporation High-k/metal gate MOSFET with reduced parasitic capacitance
KR100877107B1 (ko) 2007-06-28 2009-01-07 주식회사 하이닉스반도체 반도체 소자의 층간절연막 형성방법
KR101050454B1 (ko) 2007-07-02 2011-07-19 주식회사 하이닉스반도체 반도체 소자의 소자 분리막 및 그 형성방법
US8021514B2 (en) 2007-07-11 2011-09-20 Applied Materials, Inc. Remote plasma source for pre-treatment of substrates prior to deposition
JP5047881B2 (ja) * 2007-07-13 2012-10-10 東京応化工業株式会社 窒化チタン剥離液、及び窒化チタン被膜の剥離方法
DE102007033685A1 (de) 2007-07-19 2009-01-22 Robert Bosch Gmbh Verfahren zum Ätzen einer Schicht auf einem Silizium-Halbleitersubstrat
US8008166B2 (en) 2007-07-26 2011-08-30 Applied Materials, Inc. Method and apparatus for cleaning a substrate surface
JP5316412B2 (ja) 2007-08-31 2013-10-16 東京エレクトロン株式会社 半導体装置の製造方法
JP5347294B2 (ja) 2007-09-12 2013-11-20 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
US7781332B2 (en) 2007-09-19 2010-08-24 International Business Machines Corporation Methods to mitigate plasma damage in organosilicate dielectrics using a protective sidewall spacer
KR101519684B1 (ko) 2007-09-25 2015-05-12 램 리써치 코포레이션 플라즈마 프로세싱 장치용 샤워헤드 전극 어셈블리를 위한 온도 제어 모듈
US8298931B2 (en) 2007-09-28 2012-10-30 Sandisk 3D Llc Dual damascene with amorphous carbon for 3D deep via/trench application
US20090084317A1 (en) 2007-09-28 2009-04-02 Applied Materials, Inc. Atomic layer deposition chamber and components
KR101070292B1 (ko) 2007-09-28 2011-10-06 주식회사 하이닉스반도체 반도체장치의 리세스게이트 제조 방법
KR101177983B1 (ko) 2007-10-11 2012-08-29 발렌스 프로세스 이큅먼트, 인코포레이티드 화학 기상 증착 반응기
US7838390B2 (en) 2007-10-12 2010-11-23 Samsung Electronics Co., Ltd. Methods of forming integrated circuit devices having ion-cured electrically insulating layers therein
US7976631B2 (en) 2007-10-16 2011-07-12 Applied Materials, Inc. Multi-gas straight channel showerhead
US7871926B2 (en) 2007-10-22 2011-01-18 Applied Materials, Inc. Methods and systems for forming at least one dielectric layer
US8252696B2 (en) 2007-10-22 2012-08-28 Applied Materials, Inc. Selective etching of silicon nitride
KR101645043B1 (ko) 2007-10-31 2016-08-02 램 리써치 코포레이션 플라즈마 프로세싱 챔버, 플라즈마 프로세싱 콤포넌트 및 플라즈마 식각 챔버 프로세싱 콤포넌트 제조 방법
US8592318B2 (en) 2007-11-08 2013-11-26 Lam Research Corporation Pitch reduction using oxide spacer
US7964040B2 (en) 2007-11-08 2011-06-21 Applied Materials, Inc. Multi-port pumping system for substrate processing chambers
US7704849B2 (en) 2007-12-03 2010-04-27 Micron Technology, Inc. Methods of forming trench isolation in silicon of a semiconductor substrate by plasma
CN101999022A (zh) 2007-12-04 2011-03-30 帕勒拜尔股份公司 多层的太阳能元件
US8187486B1 (en) 2007-12-13 2012-05-29 Novellus Systems, Inc. Modulating etch selectivity and etch rate of silicon nitride thin films
JP2009170890A (ja) 2007-12-18 2009-07-30 Takashima & Co Ltd 可撓性膜状太陽電池複層体
US8512509B2 (en) 2007-12-19 2013-08-20 Applied Materials, Inc. Plasma reactor gas distribution plate with radially distributed path splitting manifold
US20090170331A1 (en) 2007-12-27 2009-07-02 International Business Machines Corporation Method of forming a bottle-shaped trench by ion implantation
US7910477B2 (en) 2007-12-28 2011-03-22 Texas Instruments Incorporated Etch residue reduction by ash methodology
US8018023B2 (en) 2008-01-14 2011-09-13 Kabushiki Kaisha Toshiba Trench sidewall protection by a carbon-rich layer in a semiconductor device
TW200933812A (en) 2008-01-30 2009-08-01 Promos Technologies Inc Process for forming trench isolation structure and semiconductor device produced thereby
US20090194810A1 (en) 2008-01-31 2009-08-06 Masahiro Kiyotoshi Semiconductor device using element isolation region of trench isolation structure and manufacturing method thereof
DE102008016425B4 (de) 2008-03-31 2015-11-19 Advanced Micro Devices, Inc. Verfahren zur Strukturierung einer Metallisierungsschicht durch Verringerung der durch Lackentfernung hervorgerufenen Schäden des dielektrischen Materials
US20090258162A1 (en) 2008-04-12 2009-10-15 Applied Materials, Inc. Plasma processing apparatus and method
JP2009266952A (ja) 2008-04-23 2009-11-12 Seiko Epson Corp デバイスの製造方法及び製造装置
US8318605B2 (en) 2008-04-25 2012-11-27 Applied Materials, Inc. Plasma treatment method for preventing defects in doped silicon oxide surfaces during exposure to atmosphere
US8252194B2 (en) 2008-05-02 2012-08-28 Micron Technology, Inc. Methods of removing silicon oxide
US8236133B2 (en) 2008-05-05 2012-08-07 Applied Materials, Inc. Plasma reactor with center-fed multiple zone gas distribution for improved uniformity of critical dimension bias
US20090277874A1 (en) 2008-05-09 2009-11-12 Applied Materials, Inc. Method and apparatus for removing polymer from a substrate
US8357435B2 (en) 2008-05-09 2013-01-22 Applied Materials, Inc. Flowable dielectric equipment and processes
US20090277587A1 (en) 2008-05-09 2009-11-12 Applied Materials, Inc. Flowable dielectric equipment and processes
US8277670B2 (en) 2008-05-13 2012-10-02 Lam Research Corporation Plasma process with photoresist mask pretreatment
KR100998011B1 (ko) 2008-05-22 2010-12-03 삼성엘이디 주식회사 화학기상 증착장치
DE102008026134A1 (de) 2008-05-30 2009-12-17 Advanced Micro Devices, Inc., Sunnyvale Mikrostrukturbauelement mit einer Metallisierungsstruktur mit selbstjustierten Luftspalten zwischen dichtliegenden Metallleitungen
US8161906B2 (en) 2008-07-07 2012-04-24 Lam Research Corporation Clamped showerhead electrode assembly
WO2010008021A1 (ja) 2008-07-15 2010-01-21 キヤノンアネルバ株式会社 プラズマ処理方法及びプラズマ処理装置
KR20100013980A (ko) 2008-08-01 2010-02-10 주식회사 하이닉스반도체 반도체 소자의 소자 분리막 형성 방법
US8702902B2 (en) 2008-08-20 2014-04-22 Vision Dynamics Holding B.V. Device for generating a plasma discharge for patterning the surface of a substrate
US8268729B2 (en) 2008-08-21 2012-09-18 International Business Machines Corporation Smooth and vertical semiconductor fin structure
KR100997502B1 (ko) 2008-08-26 2010-11-30 금호석유화학 주식회사 개환된 프탈릭 언하이드라이드를 포함하는 유기 반사 방지막 조성물과 이의 제조방법
KR101025741B1 (ko) 2008-09-02 2011-04-04 주식회사 하이닉스반도체 수직 채널 트랜지스터의 활성필라 제조방법
US8871645B2 (en) 2008-09-11 2014-10-28 Applied Materials, Inc. Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof
US7709396B2 (en) 2008-09-19 2010-05-04 Applied Materials, Inc. Integral patterning of large features along with array using spacer mask patterning process flow
US7968441B2 (en) 2008-10-08 2011-06-28 Applied Materials, Inc. Dopant activation anneal to achieve less dopant diffusion (better USJ profile) and higher activation percentage
US7928003B2 (en) 2008-10-10 2011-04-19 Applied Materials, Inc. Air gap interconnects using carbon-based films
US8563090B2 (en) 2008-10-16 2013-10-22 Applied Materials, Inc. Boron film interface engineering
US7910491B2 (en) 2008-10-16 2011-03-22 Applied Materials, Inc. Gapfill improvement with low etch rate dielectric liners
US20100099263A1 (en) 2008-10-20 2010-04-22 Applied Materials, Inc. Nf3/h2 remote plasma process with high etch selectivity of psg/bpsg over thermal oxide and low density surface defects
US8173547B2 (en) 2008-10-23 2012-05-08 Lam Research Corporation Silicon etch with passivation using plasma enhanced oxidation
US20100101727A1 (en) 2008-10-27 2010-04-29 Helin Ji Capacitively coupled remote plasma source with large operating pressure range
JP5396065B2 (ja) 2008-10-28 2014-01-22 株式会社日立製作所 半導体装置の製造方法
US20100144140A1 (en) 2008-12-10 2010-06-10 Novellus Systems, Inc. Methods for depositing tungsten films having low resistivity for gapfill applications
US8540844B2 (en) 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
US8058179B1 (en) 2008-12-23 2011-11-15 Novellus Systems, Inc. Atomic layer removal process with higher etch amount
KR20100074508A (ko) 2008-12-24 2010-07-02 주식회사 동부하이텍 반도체 소자의 제조 방법
JP2010154699A (ja) 2008-12-26 2010-07-08 Hitachi Ltd 磁束可変型回転電機
US20100183825A1 (en) 2008-12-31 2010-07-22 Cambridge Nanotech Inc. Plasma atomic layer deposition system and method
KR101587601B1 (ko) 2009-01-14 2016-01-25 삼성전자주식회사 비휘발성 메모리 장치의 제조 방법
US20100187694A1 (en) 2009-01-28 2010-07-29 Chen-Hua Yu Through-Silicon Via Sidewall Isolation Structure
US7964517B2 (en) 2009-01-29 2011-06-21 Texas Instruments Incorporated Use of a biased precoat for reduced first wafer defects in high-density plasma process
KR20100087915A (ko) 2009-01-29 2010-08-06 삼성전자주식회사 실린더형 스토리지 노드를 포함하는 반도체 메모리 소자 및그 제조 방법
JP5210191B2 (ja) 2009-02-03 2013-06-12 東京エレクトロン株式会社 窒化珪素膜のドライエッチング方法
CN102365906B (zh) 2009-02-13 2016-02-03 应用材料公司 用于等离子体腔室电极的rf总线与rf回流总线
US8148749B2 (en) 2009-02-19 2012-04-03 Fairchild Semiconductor Corporation Trench-shielded semiconductor device
WO2010102125A2 (en) 2009-03-05 2010-09-10 Applied Materials, Inc. Inductively coupled plasma reactor having rf phase control and methods of use thereof
WO2010105585A1 (de) 2009-03-17 2010-09-23 Roth & Rau Ag Substratbearbeitungsanlage und substratbearbeitungsverfahren
KR101539699B1 (ko) 2009-03-19 2015-07-27 삼성전자주식회사 3차원 구조의 비휘발성 메모리 소자 및 그 제조방법
US8312839B2 (en) 2009-03-24 2012-11-20 Applied Materials, Inc. Mixing frequency at multiple feeding points
US8272346B2 (en) 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
US8193075B2 (en) 2009-04-20 2012-06-05 Applied Materials, Inc. Remote hydrogen plasma with ion filter for terminating silicon dangling bonds
SG174993A1 (en) 2009-04-21 2011-11-28 Applied Materials Inc Cvd apparatus for improved film thickness non-uniformity and particle performance
US8492292B2 (en) 2009-06-29 2013-07-23 Applied Materials, Inc. Methods of forming oxide layers on substrates
KR101659303B1 (ko) 2009-07-15 2016-09-23 어플라이드 머티어리얼스, 인코포레이티드 Ｃｖｄ 챔버의 유동 제어 피쳐
US8124531B2 (en) 2009-08-04 2012-02-28 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US7935643B2 (en) 2009-08-06 2011-05-03 Applied Materials, Inc. Stress management for tensile films
US7989365B2 (en) 2009-08-18 2011-08-02 Applied Materials, Inc. Remote plasma source seasoning
EP2471065A4 (en) 2009-08-26 2013-01-30 Veeco Instr Inc SYSTEM FOR PRODUCING A PATTERN ON MAGNETIC RECORDING MEDIA
US8211808B2 (en) 2009-08-31 2012-07-03 Applied Materials, Inc. Silicon-selective dry etch for carbon-containing films
WO2011031858A1 (en) 2009-09-10 2011-03-17 Matheson Tri-Gas, Inc. High aspect ratio silicon oxide etch
US20110061810A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110065276A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110061812A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
JP5648349B2 (ja) 2009-09-17 2015-01-07 東京エレクトロン株式会社 成膜装置
US8329587B2 (en) 2009-10-05 2012-12-11 Applied Materials, Inc. Post-planarization densification
EP2315028A1 (en) 2009-10-26 2011-04-27 Atlas Antibodies AB PODXL protein in colorectal cancer
JP5257328B2 (ja) 2009-11-04 2013-08-07 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
US8455364B2 (en) 2009-11-06 2013-06-04 International Business Machines Corporation Sidewall image transfer using the lithographic stack as the mandrel
US8771538B2 (en) 2009-11-18 2014-07-08 Applied Materials, Inc. Plasma source design
US8742665B2 (en) 2009-11-18 2014-06-03 Applied Materials, Inc. Plasma source design
US20110127156A1 (en) 2009-11-30 2011-06-02 Applied Materials, Inc. Chamber for processing hard disk drive substrates
TWI579916B (zh) 2009-12-09 2017-04-21 諾菲勒斯系統公司 整合可流動氧化物及頂蓋氧化物之新穎間隙填充
US8202803B2 (en) 2009-12-11 2012-06-19 Tokyo Electron Limited Method to remove capping layer of insulation dielectric in interconnect structures
US20110151677A1 (en) 2009-12-21 2011-06-23 Applied Materials, Inc. Wet oxidation process performed on a dielectric material formed from a flowable cvd process
US8501629B2 (en) 2009-12-23 2013-08-06 Applied Materials, Inc. Smooth SiConi etch for silicon-containing films
JP4927158B2 (ja) 2009-12-25 2012-05-09 東京エレクトロン株式会社 基板処理方法、その基板処理方法を実行させるためのプログラムを記録した記録媒体及び基板処理装置
JP5710209B2 (ja) 2010-01-18 2015-04-30 東京エレクトロン株式会社 電磁波給電機構およびマイクロ波導入機構
JP5166458B2 (ja) 2010-01-22 2013-03-21 株式会社東芝 半導体装置及びその製造方法
JP5608384B2 (ja) 2010-02-05 2014-10-15 東京エレクトロン株式会社 半導体装置の製造方法及びプラズマエッチング装置
US8361338B2 (en) 2010-02-11 2013-01-29 Taiwan Semiconductor Manufacturing Company, Ltd. Hard mask removal method
US8992733B2 (en) 2010-02-15 2015-03-31 Daikin Industries, Ltd. Water and oil resistant agent for paper and paper treatment process
US8456009B2 (en) 2010-02-18 2013-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure having an air-gap region and a method of manufacturing the same
US8563445B2 (en) 2010-03-05 2013-10-22 Applied Materials, Inc. Conformal layers by radical-component CVD
KR20130007572A (ko) 2010-03-16 2013-01-18 쌘디스크 3디 엘엘씨 금속 산화물 저항률 전환층과 함께 사용하기 위한 하부 전극
JP5450187B2 (ja) 2010-03-16 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US8435902B2 (en) 2010-03-17 2013-05-07 Applied Materials, Inc. Invertable pattern loading with dry etch
US8288268B2 (en) 2010-04-29 2012-10-16 International Business Machines Corporation Microelectronic structure including air gap
US8475674B2 (en) 2010-04-30 2013-07-02 Applied Materials, Inc. High-temperature selective dry etch having reduced post-etch solid residue
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US8373239B2 (en) 2010-06-08 2013-02-12 International Business Machines Corporation Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectric
US20120009796A1 (en) 2010-07-09 2012-01-12 Applied Materials, Inc. Post-ash sidewall healing
US8278203B2 (en) 2010-07-28 2012-10-02 Sandisk Technologies Inc. Metal control gate formation in non-volatile storage
US9184028B2 (en) 2010-08-04 2015-11-10 Lam Research Corporation Dual plasma volume processing apparatus for neutral/ion flux control
US8869742B2 (en) 2010-08-04 2014-10-28 Lam Research Corporation Plasma processing chamber with dual axial gas injection and exhaust
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
KR20120029291A (ko) 2010-09-16 2012-03-26 삼성전자주식회사 반도체 소자 및 그 제조 방법
US8183134B2 (en) 2010-10-19 2012-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces
US20130224960A1 (en) 2010-10-29 2013-08-29 Applied Materials, Inc. Methods for etching oxide layers using process gas pulsing
JP5544343B2 (ja) 2010-10-29 2014-07-09 東京エレクトロン株式会社 成膜装置
US9111994B2 (en) 2010-11-01 2015-08-18 Magnachip Semiconductor, Ltd. Semiconductor device and method of fabricating the same
US8133349B1 (en) 2010-11-03 2012-03-13 Lam Research Corporation Rapid and uniform gas switching for a plasma etch process
US8389416B2 (en) 2010-11-22 2013-03-05 Tokyo Electron Limited Process for etching silicon with selectivity to silicon-germanium
KR20120058962A (ko) 2010-11-30 2012-06-08 삼성전자주식회사 반도체 장치의 제조 방법
US8741778B2 (en) 2010-12-14 2014-06-03 Applied Materials, Inc. Uniform dry etch in two stages
US9719169B2 (en) 2010-12-20 2017-08-01 Novellus Systems, Inc. System and apparatus for flowable deposition in semiconductor fabrication
JP5728221B2 (ja) 2010-12-24 2015-06-03 東京エレクトロン株式会社 基板処理方法及び記憶媒体
KR101529578B1 (ko) 2011-01-14 2015-06-19 성균관대학교산학협력단 플라즈마 기판 처리 장치 및 방법
US20120180954A1 (en) 2011-01-18 2012-07-19 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8363476B2 (en) 2011-01-19 2013-01-29 Macronix International Co., Ltd. Memory device, manufacturing method and operating method of the same
US9018692B2 (en) 2011-01-19 2015-04-28 Macronix International Co., Ltd. Low cost scalable 3D memory
US8771539B2 (en) 2011-02-22 2014-07-08 Applied Materials, Inc. Remotely-excited fluorine and water vapor etch
JP6114698B2 (ja) 2011-03-01 2017-04-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ デュアルロードロック構成内の除害及びストリップ処理チャンバ
TW201246362A (en) 2011-03-01 2012-11-16 Univ King Abdullah Sci & Tech Silicon germanium mask for deep silicon etching
FR2972563B1 (fr) 2011-03-07 2013-03-01 Altis Semiconductor Snc Procédé de traitement d'une couche de nitrure de métal oxydée
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
WO2012128783A1 (en) 2011-03-22 2012-09-27 Applied Materials, Inc. Liner assembly for chemical vapor deposition chamber
JP6003011B2 (ja) 2011-03-31 2016-10-05 東京エレクトロン株式会社 基板処理装置
JP5815967B2 (ja) 2011-03-31 2015-11-17 東京エレクトロン株式会社 基板洗浄装置及び真空処理システム
US8415250B2 (en) 2011-04-29 2013-04-09 International Business Machines Corporation Method of forming silicide contacts of different shapes selectively on regions of a semiconductor device
US20120285621A1 (en) 2011-05-10 2012-11-15 Applied Materials, Inc. Semiconductor chamber apparatus for dielectric processing
US9012283B2 (en) 2011-05-16 2015-04-21 International Business Machines Corporation Integrated circuit (IC) chip having both metal and silicon gate field effect transistors (FETs) and method of manufacture
US8562785B2 (en) 2011-05-31 2013-10-22 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
US8637372B2 (en) 2011-06-29 2014-01-28 GlobalFoundries, Inc. Methods for fabricating a FINFET integrated circuit on a bulk silicon substrate
US8883637B2 (en) 2011-06-30 2014-11-11 Novellus Systems, Inc. Systems and methods for controlling etch selectivity of various materials
US9054048B2 (en) 2011-07-05 2015-06-09 Applied Materials, Inc. NH3 containing plasma nitridation of a layer on a substrate
US20130034666A1 (en) 2011-08-01 2013-02-07 Applied Materials, Inc. Inductive plasma sources for wafer processing and chamber cleaning
US8771536B2 (en) 2011-08-01 2014-07-08 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
KR101271247B1 (ko) 2011-08-02 2013-06-07 주식회사 유진테크 에피택셜 공정을 위한 반도체 제조설비
CN102915902B (zh) 2011-08-02 2015-11-25 中微半导体设备(上海)有限公司 一种电容耦合式的等离子体处理装置及其基片加工方法
US20130045605A1 (en) 2011-08-18 2013-02-21 Applied Materials, Inc. Dry-etch for silicon-and-nitrogen-containing films
US8735291B2 (en) 2011-08-25 2014-05-27 Tokyo Electron Limited Method for etching high-k dielectric using pulsed bias power
US8679982B2 (en) 2011-08-26 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and oxygen
US8679983B2 (en) 2011-09-01 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
US20130217243A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Doping of dielectric layers
US8808562B2 (en) 2011-09-12 2014-08-19 Tokyo Electron Limited Dry metal etching method
US8927390B2 (en) 2011-09-26 2015-01-06 Applied Materials, Inc. Intrench profile
US20130260564A1 (en) 2011-09-26 2013-10-03 Applied Materials, Inc. Insensitive dry removal process for semiconductor integration
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
JP5740281B2 (ja) 2011-10-20 2015-06-24 東京エレクトロン株式会社 金属膜のドライエッチング方法
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
JP5779482B2 (ja) 2011-11-15 2015-09-16 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US8652298B2 (en) 2011-11-21 2014-02-18 Lam Research Corporation Triode reactor design with multiple radiofrequency powers
US8900364B2 (en) 2011-11-29 2014-12-02 Intermolecular, Inc. High productivity vapor processing system
US8603891B2 (en) 2012-01-20 2013-12-10 Micron Technology, Inc. Methods for forming vertical memory devices and apparatuses
US8747686B2 (en) 2012-01-27 2014-06-10 Applied Materials, Inc. Methods of end point detection for substrate fabrication processes
CN110004429B (zh) 2012-03-27 2021-08-31 诺发系统公司 钨特征填充
US9161428B2 (en) 2012-04-26 2015-10-13 Applied Materials, Inc. Independent control of RF phases of separate coils of an inductively coupled plasma reactor
US20130284369A1 (en) 2012-04-26 2013-10-31 Applied Materials, Inc. Two-phase operation of plasma chamber by phase locked loop
JP2013235912A (ja) 2012-05-08 2013-11-21 Tokyo Electron Ltd 被処理基体をエッチングする方法、及びプラズマエッチング装置
US20130298942A1 (en) 2012-05-14 2013-11-14 Applied Materials, Inc. Etch remnant removal
US9034773B2 (en) 2012-07-02 2015-05-19 Novellus Systems, Inc. Removal of native oxide with high selectivity
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9184030B2 (en) 2012-07-19 2015-11-10 Lam Research Corporation Edge exclusion control with adjustable plasma exclusion zone ring
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US8772888B2 (en) 2012-08-10 2014-07-08 Avalanche Technology Inc. MTJ MRAM with stud patterning
US8747680B1 (en) 2012-08-14 2014-06-10 Everspin Technologies, Inc. Method of manufacturing a magnetoresistive-based device
WO2014035933A1 (en) 2012-08-28 2014-03-06 Applied Materials, Inc. Methods and apparatus for forming tantalum silicate layers on germanium or iii-v semiconductor devices
JP6027374B2 (ja) 2012-09-12 2016-11-16 東京エレクトロン株式会社 プラズマ処理装置及びフィルタユニット
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US20140099794A1 (en) 2012-09-21 2014-04-10 Applied Materials, Inc. Radical chemistry modulation and control using multiple flow pathways
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US9018022B2 (en) 2012-09-24 2015-04-28 Lam Research Corporation Showerhead electrode assembly in a capacitively coupled plasma processing apparatus
US8765574B2 (en) 2012-11-09 2014-07-01 Applied Materials, Inc. Dry etch process
JP6035117B2 (ja) 2012-11-09 2016-11-30 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9064816B2 (en) 2012-11-30 2015-06-23 Applied Materials, Inc. Dry-etch for selective oxidation removal
US20140166618A1 (en) 2012-12-14 2014-06-19 The Penn State Research Foundation Ultra-high speed anisotropic reactive ion etching
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US9093389B2 (en) 2013-01-16 2015-07-28 Applied Materials, Inc. Method of patterning a silicon nitride dielectric film
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
JP2014154421A (ja) 2013-02-12 2014-08-25 Tokyo Electron Ltd プラズマ処理装置、プラズマ処理方法、および高周波発生器
US20140234466A1 (en) 2013-02-21 2014-08-21 HGST Netherlands B.V. Imprint mold and method for making using sidewall spacer line doubling
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US8801952B1 (en) 2013-03-07 2014-08-12 Applied Materials, Inc. Conformal oxide dry etch
US8946023B2 (en) 2013-03-12 2015-02-03 Sandisk Technologies Inc. Method of making a vertical NAND device using sequential etching of multilayer stacks
US20140262031A1 (en) 2013-03-12 2014-09-18 Sergey G. BELOSTOTSKIY Multi-mode etch chamber source assembly
TWI625424B (zh) 2013-03-13 2018-06-01 應用材料股份有限公司 蝕刻包含過渡金屬的膜之方法
US20140273451A1 (en) 2013-03-13 2014-09-18 Applied Materials, Inc. Tungsten deposition sequence
US9556507B2 (en) 2013-03-14 2017-01-31 Applied Materials, Inc. Yttria-based material coated chemical vapor deposition chamber heater
US9006106B2 (en) 2013-03-14 2015-04-14 Applied Materials, Inc. Method of removing a metal hardmask
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9276011B2 (en) 2013-03-15 2016-03-01 Micron Technology, Inc. Cell pillar structures and integrated flows
WO2014145263A1 (en) 2013-03-15 2014-09-18 Dr. Py Institute, Llc Single-use needle assembly and method
US8946076B2 (en) 2013-03-15 2015-02-03 Micron Technology, Inc. Methods of fabricating integrated structures, and methods of forming vertically-stacked memory cells
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
US9230819B2 (en) 2013-04-05 2016-01-05 Lam Research Corporation Internal plasma grid applications for semiconductor fabrication in context of ion-ion plasma processing
US20140308758A1 (en) 2013-04-10 2014-10-16 Applied Materials, Inc. Patterning magnetic memory
US20140311581A1 (en) 2013-04-19 2014-10-23 Applied Materials, Inc. Pressure controller configuration for semiconductor processing applications
US8895449B1 (en) 2013-05-16 2014-11-25 Applied Materials, Inc. Delicate dry clean
US20140342569A1 (en) 2013-05-16 2014-11-20 Applied Materials, Inc. Near surface etch selectivity enhancement
US9114438B2 (en) 2013-05-21 2015-08-25 Applied Materials, Inc. Copper residue chamber clean
US9082826B2 (en) 2013-05-24 2015-07-14 Lam Research Corporation Methods and apparatuses for void-free tungsten fill in three-dimensional semiconductor features
US10808317B2 (en) 2013-07-03 2020-10-20 Lam Research Corporation Deposition apparatus including an isothermal processing zone
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
KR102154112B1 (ko) 2013-08-01 2020-09-09 삼성전자주식회사 금속 배선들을 포함하는 반도체 장치 및 그 제조 방법
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US9051655B2 (en) 2013-09-16 2015-06-09 Applied Materials, Inc. Boron ionization for aluminum oxide etch enhancement
US8980758B1 (en) 2013-09-17 2015-03-17 Applied Materials, Inc. Methods for etching an etching stop layer utilizing a cyclical etching process
US8951429B1 (en) 2013-10-29 2015-02-10 Applied Materials, Inc. Tungsten oxide processing
US9236265B2 (en) 2013-11-04 2016-01-12 Applied Materials, Inc. Silicon germanium processing
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
CN104956476B (zh) 2013-11-06 2017-11-14 马特森技术有限公司 用于垂直nand器件的新型掩模去除方法策略
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9330937B2 (en) 2013-11-13 2016-05-03 Intermolecular, Inc. Etching of semiconductor structures that include titanium-based layers
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9117855B2 (en) 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
US20150170926A1 (en) 2013-12-16 2015-06-18 David J. Michalak Dielectric layers having ordered elongate pores
US20150170879A1 (en) 2013-12-17 2015-06-18 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US20150171008A1 (en) 2013-12-17 2015-06-18 GLOBAL FOUNDRIES Singapore Ptd. Ltd. Integrated circuits with dummy contacts and methods for producing such integrated circuits
US20150170943A1 (en) 2013-12-17 2015-06-18 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9263278B2 (en) 2013-12-17 2016-02-16 Applied Materials, Inc. Dopant etch selectivity control
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US9111907B2 (en) 2014-01-02 2015-08-18 Globalfoundries Inc. Silicide protection during contact metallization and resulting semiconductor structures
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US20150214066A1 (en) 2014-01-27 2015-07-30 Applied Materials, Inc. Method for material removal in dry etch reactor
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9136273B1 (en) 2014-03-21 2015-09-15 Applied Materials, Inc. Flash gate air gap
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
KR102175763B1 (ko) 2014-04-09 2020-11-09 삼성전자주식회사 반도체 메모리 장치 및 이의 제조 방법
US9881788B2 (en) 2014-05-22 2018-01-30 Lam Research Corporation Back side deposition apparatus and applications
US9773683B2 (en) 2014-06-09 2017-09-26 American Air Liquide, Inc. Atomic layer or cyclic plasma etching chemistries and processes
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US20150371865A1 (en) 2014-06-19 2015-12-24 Applied Materials, Inc. High selectivity gas phase silicon nitride removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US20150371861A1 (en) 2014-06-23 2015-12-24 Applied Materials, Inc. Protective silicon oxide patterning
US20160005833A1 (en) 2014-07-03 2016-01-07 Applied Materials, Inc. Feol low-k spacers
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US9165786B1 (en) 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures
US20160042968A1 (en) 2014-08-05 2016-02-11 Applied Materials, Inc. Integrated oxide and si etch for 3d cell channel mobility improvements
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9478434B2 (en) 2014-09-24 2016-10-25 Applied Materials, Inc. Chlorine-based hardmask removal
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
US9275834B1 (en) 2015-02-20 2016-03-01 Applied Materials, Inc. Selective titanium nitride etch

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