TWI605514B - 用於選擇性移除鎢之乾蝕刻 - Google Patents

用於選擇性移除鎢之乾蝕刻 Download PDF

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TWI605514B
TWI605514B TW103100685A TW103100685A TWI605514B TW I605514 B TWI605514 B TW I605514B TW 103100685 A TW103100685 A TW 103100685A TW 103100685 A TW103100685 A TW 103100685A TW I605514 B TWI605514 B TW I605514B
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plasma
tungsten
etching
zone
substrate
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TW201436032A (zh
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王希昆
徐菁鎂
英格爾尼汀Ｋ
李資慧
王安川
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應用材料股份有限公司
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
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    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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Description

用於選擇性移除鎢之乾蝕刻 【相關申請案之交插引用】
此申請案主張享有皆於2013年3月15號申請之美國專利申請案第13/840,206號及美國專利申請案第13/839,948號的優先權。美國專利申請案第13/840,206號主張享有Wang等人於2013年1月17號申請且發明名稱為「用於選擇性移除鎢之乾蝕刻(DRY-ETCH FOR SELECTIVE TUNGSTEN REMOVAL)」之美國專利臨時申請案第61/753,677號的所有權益。此申請案亦與Kim等人於2012年11月30號申請且發明名稱為「用於選擇性氧化移除之乾蝕刻法(DRY-ETCH FOR SELECTIVE OXIDATION REMOVAL)」的美國專利臨時申請案第61/732,074號有關。上述各美國專利申請案皆全文併入本案以供各種目的之用。
此申請案是有關用於從半導體基板上選擇性移除材料的乾蝕刻製程。
藉著能在基板表面上製造複雜圖案化材料層的製程可製成積體電路。在基板上製造圖案化材料需要能用來移除 露出材料的受控制方法。化學蝕刻法可用於各種用途，包括用於將光阻劑中的圖案轉移至下方層中、使已存在於表面上的膜層薄化或使特徵結構的橫向尺寸薄化。通常期望能具有蝕刻一種材料的速度比蝕刻另一種材料的速度快的蝕刻製程，以有助於進行圖案轉移製程。此種蝕刻製程便可稱為對第一種材料具有選擇性。由於材料、電路及製程的多樣性，已開發出對於各種材料具有選擇性的諸多蝕刻製程。然而，用來選擇性蝕刻金屬的選擇並不多。
乾蝕刻製程通常適用於從半導體基板上選擇性地移除材料。此適用性源自於乾蝕刻製程能夠溫和地從微型結構中移除材料且具有最小的物理性干擾。乾蝕刻製程亦允許藉著移除氣態試劑而使蝕刻速度驟止。某些乾蝕刻製程涉及到會使基板暴露於由一種或更多種前驅物所形成的遠端電漿副產物下。例如，進行氨與三氟化氮的遠端電漿激發作用使得當電漿流出物流入基板處理區內時能從已圖案化基板上選擇性地移除氧化矽。近來開發出數種遠端電漿蝕刻製程以用於相對於另一種介電質來選擇性移除各種介電質。然而，研發用來選擇性移除金屬和金屬原生氧化物的乾蝕刻製程較少。
故需要可選擇性且可精細地蝕刻暴露金屬表面的方法。
本發明描述相對於含矽薄膜(例如，氧化矽、氮碳化矽(silicon carbon nitride)及多晶矽((poly)silicon))及氧化鎢而選擇性蝕刻鎢的方法。該等方法包括由含氟前驅物及/或氫氣 (H2)形成遠端電漿蝕刻。使來自該遠端電漿的電漿流出物流入基板處理區中，且在該基板處理區中，電漿流出物與鎢進行反應。該電漿流出物與暴露的表面反應並選擇性地移除鎢，同時該等電漿流出物極緩慢地移除其他的暴露材料。且包括可於後續或同時進行的方法以移除例如可能因暴露在大氣中所生成的薄氧化鎢層。
本發明實施例包括在基板處理腔室的基板處理區中蝕刻已圖案化基板的方法。該已圖案化基板具有暴露的鎢區及暴露的第二材料區。該等方法包括使含氟前驅物流入與基板處理區流體連通的遠端電漿區中，同時在該電漿區中形成電漿以產生電漿流出物。該等方法進一步包括藉著使電漿流出物經由噴頭中的貫穿孔流入基板處理區中而從基板蝕除暴露的鎢。
在以下實施方式中提出部分的附加實施例和特徵，且所屬技術領域中熟悉該項技藝者在檢閱本案說明書或藉由實施所揭示之實施例時，將可明白或習得一部分的附加實施例和特徵。利用本案說明書中描述工具手段、組合方式及方法可實現並獲得所揭示之實施例的特徵和優點。
110、120、125、130、135、145‧‧‧處理步驟
1001‧‧‧基板處理腔室
1002‧‧‧遠端電漿系統
1003‧‧‧冷卻板
1005‧‧‧氣體入口組件
1010‧‧‧流體供應系統
1014‧‧‧上板
1015‧‧‧腔室電漿區
1016‧‧‧下板
1017‧‧‧面板
1018‧‧‧體積
1019‧‧‧第一流體通道
1020‧‧‧絕緣環
1021‧‧‧第二流體通道
1023‧‧‧離子抑制器
1025‧‧‧噴頭
1027‧‧‧小孔
1031‧‧‧貫穿孔
1033‧‧‧基板處理區
1040‧‧‧功率供應器
1055‧‧‧基板
1058‧‧‧氣體供應區
1059‧‧‧孔/縫隙
1065‧‧‧基板支座/基座
1101‧‧‧處理系統
1102‧‧‧裝載鎖定室
1104‧‧‧機械手臂
1106‧‧‧固定區
1108a‧‧‧處理腔室
1108b‧‧‧處理腔室
1108c‧‧‧處理腔室
1108d‧‧‧處理腔室
1108e‧‧‧處理腔室
1108f‧‧‧處理腔室
1110‧‧‧第二機械手臂
1155‧‧‧氣體操作系統
1157‧‧‧系統控制器
參閱本案說明書的其餘部分及圖式可進一步理解所揭示之實施例的本質和優點。
第1圖是根據揭示實施例所做之鎢選擇性蝕刻製程的流程圖。
第2A圖圖示根據本案揭示技術之基板處理腔室的 概要剖面圖。
第2B圖圖示根據本案揭示技術之基板處理腔室的局部概要剖面圖。
第2C圖圖示根據本案揭示技術之噴頭的仰視平面圖。
第3圖圖示根據本案揭示技術之示例性基板處理系統的俯視平面圖。
在附圖中，類似的元件及/或特徵可能具有相同的元件符號。再者，可在元件符號後方標示破折號及用來區別該等相似元件的第二符號而加以區分相同類型的不同元件。若在本案說明書中僅使用第一元件符號，則該說明內容適用於該等具有相同第一元件符號(不論其第二元件符號為何)之相似元件中的任一元件。
本發明描述相對於含矽薄膜(例如，氧化矽、氮碳化矽及多晶矽((poly)silicon))及氧化鎢而選擇性蝕刻鎢的方法。該等方法包括由含氟前驅物及/或氫氣(H2)形成遠端電漿蝕刻。使來自遠端電漿的電漿流出物流入基板處理區中，且在該基板處理區中，電漿流出物與鎢進行反應。該等電漿流出物與暴露的表面反應並選擇性地移除鎢，同時該等電漿流出物極緩慢地移除其他的暴露材料。且包括可於後續或同時進行的方法以移除例如可能因暴露在大氣中所生成的薄氧化鎢層。
本案中所討論的蝕刻製程可能包含離子抑制元件 (ion suppression element)以達到高的鎢選擇性。該離子抑制元件的功能是減少或消除從電漿產生區移動到基板處的離子帶電物種。不帶電的中性物種和自由基物種可通過該離子抑制器中的開孔而在基板處發生反應。該離子抑制器有助於將反應區中的離子物種濃度控制在可輔助製程進行的濃度水平。
根據本發明的某些實施例，可使用如示例性設備段落中所描述的離子抑制器提供用於選擇性蝕刻基板的自由基物種及/或中性物種。在一實施例中，例如，離子抑制器用於提供含氟電漿流出物以選擇性地蝕刻鎢。該離子抑制劑可用於提供反應性氣體，且該反應性氣體所含有的自由基濃度高於離子濃度。由於該離子抑制器過濾掉或除去電漿中大部分的帶電粒子，因此在蝕刻製程期間，無需對該基板施加偏壓。相較於包含濺射與轟擊作用的習知電漿蝕刻製程而言，此種使用自由基和其他中性物種的製程能減少電漿性損害(plasma damage)。本發明實施例亦優於習知濕式蝕刻製程，在習知濕式蝕刻製程中，液體的表面張力可能造成小特徵彎曲和剝落。
為了更佳地理解和領會本發明，現參閱第1圖，第1圖是根據揭示實施例所示的鎢選擇性蝕刻製程流程圖。由暴露於大氣中，因此在鎢的表面上亦可能具有薄的原生氧化物層。該鎢可能以毯覆層的形式覆於基板上，或是鎢可能存在於已圖案化基板表面的諸多不連續區域中。不論哪種情況，鎢形成基板表面的暴露表面。該基板隨後被輸送至處理區中(步驟110)。將基板輸送至處理區中之前，(及/或)將基板輸送至處理區之後，例如使用反應性氧源處理暴露的鎢區，則該 基板的暴露鎢區上可能存在氧化鎢薄層。
電漿區與處理區是隔開的，並將三氟化氮流體引入該電漿區中(步驟120)。可使用其他氟來源以增加或取代三氟化氮。通常可使含氟前驅物流入該電漿區中，且該含氟前驅物包含選自以下群組中的至少一種前驅物：原子氟(atomic fluorine)、雙原子氟(diatomic fluorine)、三氟化溴(bromine trifluoride)、三氟化氯(chlorine trifluoride)、三氟化氮(nitrogen trifluoride)、氟化氫(hydrogen fluoride)、六氟化硫(sulfur hexafluoride)及二氟化氙(xenon difluoride)。然而，本案發明人觀察到當輸送至遠端電漿區的前驅物混合物中使用三氟化氮時，對於本案中所揭示的所有實施例有較高的蝕刻速度。本案發明人推測是因為三氟化氮電漿流出物在進行去激化(deexcitation)及/或再結合(recombination)作用之前的激發態生命週期明顯較長。延長的生命週期允許蝕刻物種能在去激化或再結合之前便從遠端電漿區移動到基板附近。
該隔開的電漿區可能是指本文中的遠端電漿區，及可能位在與該處理腔室區隔開的不同模組中，或可能是該處理腔室內的隔室。含碳與氫的前驅物(在此例子中是甲基氟CH3F)亦流入該電漿區中(步驟125)，在該電漿區中，該含碳與氫的前驅物伴隨三氟化氮在電漿中同時被激發。原子氫的流動速率可大於原子氟的流動速率以維持鎢的移除速度。在此實例中，所貢獻的氟來自于該碳源和三氟化碳。必須考慮到每個前驅物的貢獻以計算H：F的原子流量比(atomic flow ratio)。亦可加入雙原子氫(H2)，且在某些情況中需要雙原子 氫(H2)才可能達到大於H：F=1的原子流動速率比。
遠端電漿區中形成的電漿流出物隨後流入基板處理區中(步驟130)。選擇性地蝕刻基板上的鎢(步驟135)，使得移除鎢的速度遠快於各種其他材料的移除速度。文中揭示之所有實例中揭示的選擇性蝕刻法蝕刻鎢的速度可明顯快於以下任一材料：氧化鎢、氮化鈦或含矽材料(在本發明實施例中可例如矽(如，多晶矽)、氧化矽、氮化矽或氮碳化矽)。此種製程可具有廣泛基礎用途，但發現此種製程在移除用來填充高深寬比小溝槽的鎢縫隙填充物層(例如可用於形成垂直積體記憶子元件之間的暫時性間隔物)方面上有明確功效。本發明可能涉及維持氟(F)與氫(H)的原子流量比，藉以達到高的鎢蝕刻選擇性。認為氟與氫共存能進行以下兩種反應：(1)其中一個反應是消耗氫(來自CH3F)以將原生氧化鎢轉化成鎢並經由排放系統排除水氣，及(2)另一反應是消耗氟並以六氟化鎢(WF6)廢氣的形式移除鎢。本案發明人發現，使原子流量比(H：F)維持大於1：1時，儘管該聯合製程能夠移除原生氧化鎢薄層，但該聯合製程對鎢的選擇性高於對各種其他材料(包括氧化鎢在內)的選擇性。移除該基板處理區中的該等反應性化學物種及任何製程流出物，且隨後從該處理區移出基板(步驟145)。
在揭示實施例中，原子氣流量比(H：F)大於或約為1：1、大於或約為2：1，或是大於或約為3：1。在本發明實施例中使用小於或約為15：1、小於或約為12：1、小於或約為10：1或是小於或約為7：1的原子氣流量比(H：F)以達到 期望的選擇性。本案發明人亦發現到，當鎢表面上未出現原生氧化物時，文中所述的選擇性乾蝕刻法無需使用任何氫成分便能達到期望的選擇性。對於除本發明實施例中所述材料以外的材料而言，本文所揭示之製程的蝕刻選擇性(鎢：除了鎢以外的第二材料)可大於或約為10：1、大於或約為20：1、大於或約為50：1，或是大於或約為100：1。本案發明人發現本發明中所揭示之製程相對於各種特定材料展現出鎢蝕刻選擇性。在所揭示的實施例中，相對於多晶矽而言的鎢蝕刻選擇性可大於或約為100：1、大於或約為150：1、大於或約為200：1或是大於或約為250：1。在本發明實施例中，相對於氧化矽而言的鎢蝕刻選擇性可大於或約為15：1、大於或約為25：1、大於或約為30：1或是大於或約為40：1。在本發明實施例中，相對於氮碳化矽而言的鎢蝕刻選擇性可大於或約為3：1、大於或約為5：1、大於或約為7：1或是大於或約為10：1。在本發明實施例中，相對於氧化鎢而言的鎢蝕刻選擇性可大於或約為10：1、大於或約為20：1、大於或約為50：1或是大於或約為100：1。
含氟前驅物及含碳與氫之前驅物的流體可進一步包含一種或更多種惰性氣體，例如He、N2、Ar。惰性氣體可用於增進電漿穩定性、製程均勻性及諸如此類者。氬氣可作為添加物而有助於促進形成穩定電漿。當含有氦氣時通常可提高製程均勻性。此等添加物可出現在本案說明書各處的實施例中。不同氣體的流動速率和比例可用來控制蝕刻速度及蝕刻選擇性。
在揭示實施例中，以介於約25sccm(標準立方公分/分鐘)至400sccm間的流動速率供應含氟氣體(例如，NF3)，以介於約50sccm至600sccm間的流動速率供應CH3F，以介於約0slm(標準公升/分鐘)至3slm間的流動速率供應He，及以介於約0slm至3slm間的流動速率供應Ar。所屬技術領域中具有通常技術者將意識到可根據諸多因子(包括處理腔室的結構配置、基板尺寸、欲蝕刻之特徵的幾何形狀和佈局，及諸如此類因子)而使用其他氣體及/或氣流。使氫氣流(H2)流入遠端電漿區中能降低甲基氟所需的流動速率。本案發明人亦發現流入氫氣(H2)與四氟化碳(CF4)的組合物可有效替代CH3F、CH2F2或CHF3及通式為CxHyFz的前驅物(換言之，即部分氟化的烴類化合物)。因此，進入揭示實施例中之遠端電漿區中的含碳與氫之前驅物(如文中所述者)包括由含氫前驅物與含碳前驅物所組成之氣流。
該方法亦包含當該含氟前驅物及該含碳與氫之前驅物(CH3F)位於遠端電漿區內時，對該含氟前驅物及該含碳與氫之前驅物(CH3F)施加能量以產生電漿流出物。所屬技術領域中具有通常技術者可領會該電漿可包含諸多帶電物種及中性物種(包括自由基和離子)。可使用已知的技術(例如，射頻激發、電容耦合功率、感應耦合功率及諸如此類技術)產生該電漿。在實施例中使用電容耦合電漿單元施加能量。在本發明實施例中，遠端電漿源功率可介於約40瓦(watt)至約500瓦、介於約75瓦至約400瓦、介於約150瓦至約350瓦，或介於約200瓦至約300瓦。該最窄的射頻(RF)功率實施例可 使相對於各種其他暴露材料(包括氮碳化矽)選擇性移除鎢的步驟達到最佳化。在所揭示的實施例中，遠端電漿區中的壓力可能是可使基板處理區中的壓力最終介於約0.01托耳(Torr)至約50托耳之間或介於約0.1托耳至約5托耳之間。電容耦合電漿單元可配置在遠離該處理腔室的氣體反應區之處。例如，可利用噴頭使該電容耦合電漿單元和電漿產生區與該氣體反應區隔開。
在此第一實施例過程中的基板溫度通常可介於約-30℃至約400℃之間。在實施例中，在此段落中所描述的乾蝕刻期間，基板溫度可高於或約為-30℃、可高於或約為-10℃、可高於或約為10℃，或可高於或約為25℃。在所揭示的實施例中，該基板溫度可低於或約為400℃、可低於或約為350℃、可低於或約為250℃。發現隨著基板溫度升高(從約10℃升高到100℃)，鎢的蝕刻速度會隨之提高，但使用較低溫度可藉著抑制例如氧化鎢的蝕刻速度而有助於達到高選擇性。
在步驟120~135之前可包含提供氫氣(H2)流至遠端電漿區的附加步驟。本案發明人發現激發分子氫(H2)所生成的電漿流出物可能移除原生氧化鎢中的氧。淨效果是此附加步驟暴露出主要為鎢的區域以進行第1圖中所示的進一步處理。部分取決於鎢暴露在大氣中所形成的原生氧化物薄度而定，此步驟期間於遠端電漿區中添加含氟前驅物的動作是選用性的。
在描述示例性處理腔室及系統的過程中揭示了附加 製程參數。
示例性處理系統
第2A圖圖示示例性基板處理腔室1001的剖面圖，在該處理腔室內具有隔開的電漿產生區。在薄膜(氮化鈦、氮化鉭、鎢、細、多晶矽、氧化矽、氮化矽、氮氧化矽、碳氧化矽，等等)蝕刻期間，製程氣體可經由氣體入口組件1005流入腔室電漿區1015。該系統中可選用性地包含遠端電漿系統(RPS)1002，且該遠端電漿系統1002可處理第一氣體，隨後該第一氣體行經氣體入口組件1005。氣體入口組件1005可包含兩個或更多個獨立的氣體供應通道，其中若含有第二氣體通道時，該第二氣體通道(圖中未示出)可繞開該RPS 1002。因此，在所揭示之實施例中，可將該等前驅物氣體以未激發的狀態輸送至處理腔室。於另一實例裡，在所揭示的實施例中，配置成通過該RPS的第一通道可供製程氣體(process gas)使用，及繞開該RPS的第二通道可用供處理氣體(treatment gas)使用。製程氣體進入腔室電漿區1015之前，可先在該RPS 1002中激發該製程氣體。因此，在所揭示的實施例中，以上所討論的含氟前驅物例如可通過RPS 1002或繞開該RPS單元。且同樣能理解此種配置所涵蓋的各種其他實例。
圖中示出冷卻板1003、面板1017、離子抑制器1023、噴頭1025及在上方放置有基板1055的基板支座1065(亦稱為基座)，且可根據所揭示的實施例而包含上述個別元件。基座1065可具有熱交換通道，熱交換流體流經該熱交換通道以控制基板溫度。此種配置可允許冷卻或加熱基板 1055的溫度以維持相對低溫，例如介於約-20℃至約200℃或兩者之間。熱交換流體可包括乙二醇(ethylene glycol)及/或水。基座1065的晶圓支撐盤可包括鋁、陶瓷或兩者之組合，亦可使用包埋式電阻加熱元件以電阻加熱該基座1065的晶圓支撐盤以達到相對高溫，例如可從高於或約100℃至高於或約1100℃。在該基座內可形成加熱元件(例如一個或更多個線圈)，且該加熱元件的外側部分可緊鄰環繞著該支撐盤的周長，同時該加熱器的內側部分則以較小半徑的同心圓路徑延伸。該加熱元件的配線可通過基座1065的轉柄，且該轉柄進一步配置成可旋轉。
面板1017可為角錐形、圓錐形或另一種具有窄頂部逐漸擴大成寬底部的類似形狀。面板1017可如圖所示般另呈平坦狀且包含複數個用來分配製程氣體的貫穿通道。根據所使用的RPS 1002而定，電漿生成氣體及/或電漿激發物種可通過面板1017中的複數個孔(如第2B圖所示)以將該等氣體及/或物種更均勻地輸送至腔室電漿區1015中。
示例性的結構配置可包括使氣體入口組件1005通向氣體供應區1058，且藉由面板1017隔開該氣體供應區1058與腔室電漿區1015，以使該等氣體/物種流經面板1017中的該等孔而進入腔室電漿區1015中。結構特徵及操作特徵可經過選擇以防止電漿從腔室電漿區1015回流至供應區1058、氣體入口組件1005及流體供應系統1010中。該等結構特徵可包括選擇面板1017中之該等孔的尺寸和截面幾何形狀以避免出現回流電漿。該等操作特徵可包括維持氣體供應區1058與 腔室電漿區1015之間的壓差，該壓差可保持電漿單向地流過噴頭1025。圖中示出該面板1017(或該腔室的導電頂部)及噴頭1025具有位在該等特徵之間的絕緣環1020，該絕緣環允許相對於噴頭1025及/或離子抑制器1023對該面板1017施加交流(AC)電位。絕緣環1020可設置在面板1017與噴頭1025及/或離子抑制器1023之間，使得第一電漿區中可形成電容耦合電漿(CCP)。該腔室電漿區1015中可附加地設置擋板(未圖示)或該擋板可與氣體入口組件1005連接，藉以影響經由氣體入口組件1005流入該區中的流體流動。
離子抑制器1023可包括板或其他幾何結構，該板或其他幾何結構界定出複數個貫穿該結構的孔，該等孔是配置用於抑制離子性帶電物種遷移出腔室電漿區1015，同時允許不帶電的中性物種或自由基物種通過該離子抑制器1023而進入位在該抑制器與該噴頭之間的活化氣體輸送區中。在所揭示的實施例中，離子抑制器1023可包括具有各種孔配置的多孔板(perforated plate)。此等不帶電物種可包括高反應性物種，可使用低反應性載氣(less reactive carrier gas)運送該等高反應性物種通過該等孔。如上述可減少離子物種通過該等孔的遷移作用，且在某些情況下，可完全抑制離子物種的遷移。控制通過離子抑制器1023之離子物種的量可提高對於該與下方晶圓基板接觸之氣體混合物的控制，從而可提高對於該氣體混合物之沉積及/或蝕刻特性的控制。例如，調整該氣體混合物的離子濃度能明顯改變該氣體混合物的蝕刻選擇性，例如改變W：WOx的蝕刻比、W：SiCN的蝕刻比，等等。在進 行沉積的替代實施例中，調整該氣體混合物的離子濃度亦能改變介電材料之共形與可流動式沉積製程(conformal-to-flowable style deposition)的平衡。
離子抑制器1023中的複數個孔可配置成可控制該活化氣體(即，離子物種、自由基物種及/或中性物種)通過該離子抑制器1023。例如，可控制該等孔的深寬比(或該等孔的直徑比上長度)及/或該等孔的幾何形狀，使得流動通過該離子抑制器1023之活化氣體中的離子性帶電物種減少。離子抑制器1023中的孔可包含面向腔室電漿區1015的漸細部分(tapered portion)及面向噴頭1025的圓柱狀部分。可塑造該圓柱狀部分的形狀和尺寸以控制通過噴頭1025的離子物種流動。亦可對離子抑制器1023施加可調電偏壓以作為控制離子物種流過該抑制器的附加手段。
離子抑制元件1023的功能可減少或消除從該電漿產生區行進到該基板處的離子性帶電物種的數量。不帶電的中性物種及自由基物種仍可通過該離子抑制器中的開孔而與該基板發生反應。應注意，所期望的目標並非總是希望完全消除環繞在基板周圍之反應區內的離子性帶電物種。在許多情況下，可能需要使離子物種到達該基板處，藉以進行蝕刻及/或沉積製程。在這些情況下，該離子抑制器可幫助將該反應區中的離子物種濃度控制在可輔助該製程進行的濃度水平。
噴頭1025與離子抑制器1023的結合可允許在腔室電漿區1015中出現電漿而避免在基板處理區1033中直接激 發氣體，同時仍允許已激發的物種從腔室電漿區1015移動進入基板處理區1033中。以此方式配置該腔室可防止電漿與欲進行蝕刻的基板接觸1055。此方式可能有利於保護已圖刻在基板上的各種複雜結構和薄膜，若該等結構和薄膜與所產生的電漿直接接觸，該等結構和薄膜可能受損、錯位或彎曲。此外，當允許電漿接觸基板或接近該基板的水平位置時，氧化物種的蝕刻速度可能提高。因此，若所暴露出的第二材料是氧化物，藉著使該電漿保持遠離該基板可進一步保護此材料。
該處理系統可進一步包含功率供應器1040，該功率供應器1040與該處理腔室電性連接以提供電功率至該面板1017、離子抑制器1023、噴頭1025及/或基座1065以在該腔室電漿區1015或處理區1033中產生電漿。該功率供應器可配置成根據所執行的製程而輸送可調整的功率量至該腔室。此種配置允許在欲進行的製程中使用可調式電漿。不同於遠端電漿單元通常呈現具有開或關的功能，可調式電漿可配置用以輸送特定量的功率至腔室電漿區1015。此可調式電漿配置從而允許建立特定的電漿特性，使得前驅物可採特定的方式解離以加強此等前驅物所製造的蝕刻輪廓(etching profile)。
可在噴頭1025上方的腔室電漿區1015中或在噴頭1025下方的基板處理區1033中點燃電漿。電漿可出現在腔室電漿區1015以由流入的含氟前驅物產生自由基氟前驅物。在沉積期間，可於該處理腔室的導電頂部(例如，面板1017)與噴頭1025及/或離子抑制器1023之間施加通常在射頻(RF)範 圍內的AC電壓以在腔室電漿區1015中點燃電漿。RF功率供應器可產生13.56MHz的高RF頻率，但亦可單獨產生其他頻率或搭配13.56MHz的頻率產生其他頻率。
電漿功率可為各種頻率或由多種頻率所形成的組合。在示例性處理系統中，相對于離子抑制器1023及/或噴頭1025而輸送RF功率給面板1017可提供電漿。在不同實施例中，該RF功率可介於約10瓦至約2000瓦、介於約100瓦至約2000瓦、介於約200瓦至約1500瓦或介於約200瓦至約1000瓦之間。在不同實施例中，該示例性處理系統中所施用的RF頻率可為低於約200kHz的低RF頻率、介於約10MHz至約15MHz之間的高RF頻率，或大於或約為1GHz的微波頻率。該電漿功率可採電容耦合(CCP)或感應耦合(ICP)方式耦合至該遠端電漿區中。
當打開該基板處理區1033中的底部電漿以用於例如使薄膜固化或清洗包圍著基板處理區1033的內部表面時，腔室電漿區1015(圖式中的上方電漿)可處在低功率或無功率下。藉著在噴頭1055與基座1065或該腔室的底部之間施加AC電壓可點燃基板處理區1033中的電漿。可在出現電漿時，將清洗氣體引入基板處理區1033中。
可使用本文中所述噴頭的實施例使流體(如前驅物，例如含氟前驅物)流入處理區1033中。源自腔室電漿區1015中之製程氣體的已激發物種可通過離子抑制器1023中的孔及/或噴頭1025並與從該噴頭之隔開部分(separate portion)流入處理區1033中的附加前驅物發生反應。或者， 若在腔室電漿區1015中激發所有前驅物物種，則可能不會有附加前驅物流經該噴頭的該隔開部分。該處理區1033中可能出現少量電漿或無電漿。在所揭示的應用中，該等前驅物的激發衍生物可在基板上方的區域中匯合(combine)，且偶爾會在基板上匯合以蝕刻基板或移除基板上的物種。
直接在腔室電漿區1015中激發該等流體或在RPS單元1002中激發該等流體可提供數種好處。由於電漿處於腔室電漿區1015中，因此在處理區1033中可提高源自該等流體之激發物種的濃度。電漿位置位於腔室電漿區1015中可造成激發物種濃度提高。該處理區1033可位於較靠近腔室電漿區1015之處而離遠端電漿系統(RPS)1002較遠，留給該等激發物種經由與其他氣體分子、腔室壁面及噴頭表面碰撞而脫離激發態的時間較少。
在該處理區1033中亦可提高源自該製程氣體之激發物種的濃度均勻性。腔室電漿區1015的形狀可造成濃度均勻性提高，該腔室電漿區1015的形狀可能更類似於該處理區1033的形狀。就在RPS 1002中所生成的激發物種而言，相對於通過靠近噴頭1025中心處之孔的物種而言，激發物種可能要行經更遠的距離才能通過靠近噴頭1025邊緣處的孔。較遠的距離可能導致激發物種的激發狀態下降，且例如可能導致靠近基板邊緣處的成長作用較慢。在腔室電漿區1015中激發該等流體可減輕該流體流過RPS 1002或繞過該RPS單元時所造成的此種差異(variation)。
可在腔室電漿區1015中激發該等製程氣體，且處於 激發態的製程氣體可通過噴頭1025而前往處理區域1033。雖然可在處理區1033中生成電漿，但也可不在該處理區中生成電漿。在一實例中，僅有製程氣體或前驅物的激發作用是在腔室電漿區1015中激發該等製程氣體以使該等製程氣體在處理區1033中彼此反應。如先前所討論般，此做法可保護已圖刻在基板1055上的結構。
除了該等流體前驅物以外，可在不同時間引入其他氣體(包括供輸送用的載氣)以用於不同目的。在沉積過程中可引入處理氣體以從腔室壁、基板、所沉積的薄膜及/或該膜上去除不想要的物種。可在電漿中激發處理氣體，且隨後該處理氣體可用於減少或移除腔室內側的殘留成分。在其他揭示實施例中，可在無電漿下使用該處理氣體。當該處理氣體含有水蒸汽時，可使用質量流量計(MFM)、噴射閥或使用市售水蒸汽產生器進行輸送。可經由該RPS單元或繞過該RPS單元將該處理氣體引入處理區1033中，及可進一步在第一電漿區中激發該處理氣體。
第2B圖圖示會影響通過面板1017之製程氣體分配作用的特徵詳細視圖。如第2A圖及第2B圖所示，面板1017、冷卻板1003及氣體入口組件1005共同界定出氣體供應區1058，且可從氣體入口1005輸送製程氣體進入該氣體供應區1058中。該等氣體可填充該氣體供應區1058且經由面板1017中的孔1059流至腔室電漿區1015。該等孔1059配置成可引導流體採實質單一方向的方式流動，使得製程氣體可流入處理區1033，但在製程氣體通過面板1017之後可部分或完全防 止該等製程氣體回流至氣體供應區1058中。
可用於該處理腔室區段1001中的氣體分配組件(例如，噴頭1025)可稱為雙通道噴頭(DCSH)，且於文中第2A圖及第2C圖所述的實施例中另外對氣體分配組件做詳細描述。該雙通道噴頭可供蝕刻製程使用，以允許在該處理區1033以外之處隔開多種蝕刻劑，藉以在輸送蝕刻劑進入該處理區之前限制該等蝕刻劑與腔室元件及蝕刻劑彼此之間的交互作用。
噴頭1025可包括上板1014及下板1016。該等板可彼此耦接以在該等板之間界定出體積1018。耦接該等板是為了可提供貫穿該上板和下板的第一流體通道1019及貫穿該下板1016的第二流體通道1021。所形成的通道可經過配置以使流體可從該體積1018僅經由第二流體通道1021通過該下板1016，且該等第一流體通道1019可與介在該等板與該等第二流體通道1021之間的體積1018流體隔開。該體積1018可讓流體流過該氣體分配組件1025的一側。儘管第2圖的示例性系統包含雙通道噴頭，但應瞭解到可使用能讓第一前驅物與第二前驅物在到達處理區1033之前保持流體隔離的替代性分配組件。例如，在該板下方可使用多孔板和管子，雖然其他配置方式可能運作效率較低或無法提供如同所述雙通道噴頭所提供的均勻處理。
在所示實施例中，噴頭1025可藉由第一流體通道1019來分散製程氣體，該等製程氣體中含有在腔室電漿區1015中利用電漿所激發的電漿流出物。在實施例中，引入該 RPS 1002及/或腔室電漿區1015中的製程氣體可含有氟，例如CF4、NF3或XeF2。製程氣體亦可包含載氣，例如氦氣、氬氣、氮氣(N2)，等等。當提到所引入之製程氣體的原子組成時，電漿流出物可包括該製程氣體的離子化衍生物或中性衍生物，且電漿流出物在本文中亦可指自由基氟前驅物。
第2C圖是噴頭1025的仰視圖(bottom view)，該噴頭1025可根據揭示實施例與處理腔室併用。噴頭1025對應於第2A圖中所示的噴頭。貫穿孔1031呈現出第一流體通道1019的視圖，該等貫穿孔可具有複數種造型及配置方式以控制和影響前驅物通過噴頭1025的流動情形。小孔1027呈現出第二流體通道1021的視圖，該等小孔1027可實質平均地分散在該噴頭的整個表面上，甚至分散在該等貫穿孔1031之間，且相較於其他結構配置而言，當該等前驅物離開該噴頭時，該等小孔可能有助於提供更均勻的前驅物混合作用。
在2011年10月3日所申請之專利申請第13/251,714號中更完整地描述附加的雙通道噴頭及此處理系統和腔室，該案在不與本案所請特徵及內容相抵觸的情況下以引用方式併入本案中以用於各種目的。
該腔室電漿區1015或RPS中的一區域可作為遠端電漿區。在實施例中，於該遠端電漿區中形成自由基前驅物(例如，自由基氟前驅物)，且該自由基前驅物行進而進入該基板處理區中，在基板處理區中，該自由基前驅物可能會與附加前驅物匯合(combine)或不會與附加前驅物匯合。在實施例中，僅使用該自由基氟前驅物激發該等附加前驅物。在實施 例中，電漿功率主要僅施加於該遠端電漿區，藉以確保該自由基氟前驅物提供主要激發作用。在所揭示的實施例中，可以介於約25sccm至約500sccm、介於約50sccm至約150sccm或介於約75sccm至約125sccm的速率使三氟化氮或另一種含氟前驅物流入腔室電漿區1015中。甲基氟或另一種部分氟化的烴類化合物可採用能使原子H：F之流動速率比大於例如1：1的流動速率來流動。
多種前驅物的合併流動速率(Combined flow rate)可占該總氣體混合物體積的0.05%至約20%；其餘部分是載氣。在實施例中，含氟前驅物可流入該遠端電漿區中，但電漿流出物可具有相同的體積流量比(volumetric flow ratio)。在含氟前驅物的例子中，淨化氣體或載氣可能比含氟氣體優先進入該遠端電漿區中以穩定該遠端電漿區內的壓力。
在前驅物、任何載氣及電漿流出物流入基板處理區1033的期間內，基板處理區1033可維持在各種不同壓力下。在不同實施例中，該壓力可能維持在約0.1毫托耳(mTorr)至約100托耳間、維持在約1托耳至約20托耳間或維持在約1托耳至約5托耳。
該等沉積系統的實施例可併入用於製造積體電路晶片的較大型製造系統中。第3圖根據揭示實施例圖示具有沉積腔室、蝕刻腔室、烘烤腔室及固化腔室的此種處理系統1101。在該等圖式中，一對前開制式晶圓盒(裝載鎖定腔室1102)供應各種尺寸的基板，機械手臂1104接收該等基板，且機械手臂1104在將該等基板置入該等基板處理腔室1108a~ 1108f中的其中一個腔室內之前，先將該等基板放置在低壓等候區(holding area)1106中。第二機械手臂1110可用於將基板晶圓從等候區1106傳送到基板處理腔室1108a~1108f，及將基板晶圓從基板處理腔室1108a~1108f傳回等候區1106。每個基板處理腔室1108a~1108f可配置成用於進行除了圓形層沉積(CLD)、原子層沉積(ALD)、化學氣相沉積(CVD)、物理氣相沉積(PVD)、蝕刻、預清潔、除氣、定向(orientation)及其他基板製程之外，還可進行諸多的基板處理步驟，包括本文描述的乾蝕刻製程。
該等基板處理腔室1108a~1108f可包含一個或更多個系統元件以用於在基板晶圓上沉積、退火、固化及/或蝕刻介電膜。在一種結構配置中，可使用兩對處理腔室(例如，1108c~1108d及1108e~1108f)以在基板上沉積介電材料，且可使用第三對處理腔室(例如，1108a~1108b)以蝕刻所沉積的介電質。在另一種結構配置中，可將三對腔室(例如，1108a~1108f)全都配置用於蝕刻基板上的介電膜。任何所述的一個或更多個製程可在與不同實施例中所示之製造系統隔開的腔室中進行。
在前述內容中，為達解說目的，舉出諸多細節以供了解本發明的各種實施例。然而，所屬技術領域中熟悉該項技藝者將明白可在無需使用此等細節中的某些細節或使用附加細節的情況下實施某些實施例。
當用於本文中時，「基板(substrate)」可能是在基板上形成有或沒有薄層的載體基板(support substrate)。已圖案化 的基板可能是絕緣體或含有各種不同摻雜濃度和分佈的半導體，且該已圖案化基板例如可能是用於製造積體電路的半導體基板。已圖案化基板暴露的矽主要是Si但可能包含少許濃度的其他元素成分，例如氮、氧、氫、碳及諸如此類者。已圖案化基板暴露的鎢主要是W但可能包含少許濃度的其他元素成分，例如氮、氧、氫、碳及諸如此類者。當然，「暴露的鎢」可僅由鎢組成。已圖案化基板暴露的「氮化矽」主要是Si3N4但可能包含少許濃度的其他元素成分，例如氧、氫、碳及諸如此類者。「暴露的氮化矽」可僅由矽和氮所組成。已圖案化基板暴露的「氧化矽」主要是SiO2但可能包含少許濃度的其他元素成分，例如氮、氫、碳及諸如此類者。在某些實施例中，使用文中揭示方法蝕刻的氧化矽膜由矽和氧所組成。「氧化鎢」主要是鎢和氧但可能包含少許濃度的其他元素成分，例如氮、氫、碳及諸如此類者。氧化鎢可由鎢和氧所組成。「氮化鈦」主要是鈦和氮但可能包含少許濃度的其他元素成分，例如氧、氫、碳及諸如此類者。氮化鈦可由鈦和氮所組成。
「前驅物(precursor)」一詞是用於表示任何參與反應藉以從表面上移除材料或在表面上沉積材料的製程氣體。「電漿流出物(plasma effluent)」描述從腔室電漿區離開且進入基板處理區中的氣體。電漿流出物是處於「激發態(excited state)」，其中至少一部分的氣體分子是處於振動激發(vibrationally-excited)狀態、解離(dissociated)狀態及/或離子化(ionized)狀態。「自由基前驅物(radical precursor)」是用來 描述參與反應以從表面上移除材料或在表面上沉積材料的電漿流出物(流出電漿的激發態氣體)。「自由基氟(radical-fluorine)或自由基氫(radical-hydrogen)」是含有氟(或氫)但也可能含有其他元素成分的自由基前驅物。「惰性氣體(inert gas)」一詞意指任何在蝕刻薄膜或被併入薄膜內時不會形成化學鍵的氣體。示例性的惰性氣體包括貴重氣體，但也可能包括其他氣體，只要當(通常)有微量的氣體困在薄膜中時，該氣體不會形成化學鍵即可。
文中各處使用的用語「縫隙(gap)」及「溝槽(trench)」並無暗示所蝕刻的幾何結構具有大的水平深寬比(horizontal aspect ratio)之意。從表面上方觀看，溝槽可能呈圓形、卵形、多角形、矩形或各種其他造型。溝槽可能是以環繞著島狀材料的護城河形式呈現。「介層窗(via)」一詞是指低深寬比的溝槽(從上方觀看)，該溝槽可能填充金屬或可能不填充金屬，藉以形成垂直的電性連接。當用於本文中時，共形(conformal)蝕刻製程是指以與表面相同的形狀而大致均勻地移除該表面上的材料，即，蝕刻層的表面與蝕刻前的表面大體上成平行。所述技術領域中具有通常技術者將認知到已蝕刻的界面可能不會100%的共形，故「大體上」一詞允許具有可接受的公差(tolerance)。
文中已揭示數個實施例，所屬技術領域中熟悉該項技藝者將意識到在不偏離所揭示實施例的精神下可做出各種修飾、替代結構配置及等效物。此外，未對諸多廣為人知的製程和元件進行描述以避免不必要地模糊本發明。因此，上 述說明不應用來限制本發明範圍。
若提供一範圍值時，需明白除非文中另有清楚指示，否則本文亦明確揭示介於該範圍上下限之間的每一個區間值且至該下限值單位的小數點第一位。本發明涵蓋介於所述範圍中的任何所述值或任何區間值之間或介於該所述範圍中的任何其他值或其他區間值之間的每個較小範圍。此等較小範圍的上限值和下限值可各自獨立地包含在該範圍內或從該範圍中排除，且本發明亦涵蓋每一個在所述較小範圍中包含其中一個限值、不含限值或含兩限值(取決於所述範圍中是否有任何特別排除的限值)的範圍。若所述範圍包含該等限值之其中一者或兩者，本發明亦涵蓋排除了該等所含限值之其中一個或兩個限值的範圍。
當用於本文及後附請求項中時，除非本文中另有明確指示，否則單數型用語「一」、「一個」、「該」包含複數之意。因此，例如，提到「一製程」時，其意包括複數個此種製程，及提到「該介電材料」時，則指包括一種或更多種介電材料及所屬技術領域中熟悉該項技藝者已知該等介電材料的等效物，及諸如此類者。
又，當本案說明書及後附請求項中使用「包括」、「包含」、「含有」及「具有」之用語時，是意欲指出所述特徵、整數、元件或步驟地存在，但該等用語並不排除可能存在或附加一個或更多個其他的特徵、整數、元件、步驟、動作或群組。
110、120、125、130、135、145‧‧‧處理步驟

Claims (13)

  1. 一種在一基板處理腔室之一基板處理區中蝕刻一已圖案化基板的方法，其中該已圖案化基板具有一暴露鎢區及一暴露第二材料區，該方法包括：使一含氟前驅物及氫氣(H2)流入與該基板處理區流體連通的一遠端電漿區中，同時在該電漿區中形成一電漿以產生電漿流出物，其中流入一含氟前驅物及氫氣(H2)的步驟造成進入該基板處理區中的一原子流量比(H：F)大於1：1；及藉著使該等電漿流出物經由一噴頭中的貫穿孔流入該基板處理區中而從該基板蝕刻該暴露的鎢。
  2. 如請求項1所述之方法，其中該暴露鎢區是由鎢所組成。
  3. 如請求項1所述之方法，其中蝕刻該暴露鎢區的步驟包括使用比該暴露第二材料區之蝕刻速度大10倍的一鎢蝕刻速度來蝕刻鎢。
  4. 如請求項1所述之方法，其中該蝕刻該鎢的步驟包括蝕刻鎢的速度比蝕刻矽的速度快且速度比約為100：1或更高，蝕刻鎢的速度比蝕刻氧化矽的速度快且速度比約為15：1或更高，蝕刻鎢的速度比蝕刻氮碳化矽的速度快且速度比約為3：1或更高，或蝕刻鎢的速度比蝕刻氧化鎢的速度快且速度比約為10：1或更高。
  5. 如請求項1所述之方法，其中該含氟前驅物包括三氟化氮。
  6. 如請求項1所述之方法，其中該含氟前驅物包括一部分氟化的烴類化合物。
  7. 如請求項1所述之方法，其中該含氟前驅物包括甲基氟。
  8. 如請求項1所述之方法，進一步包括一預處理步驟，該預處理步驟發生在蝕刻該暴露鎢區的步驟之前，其中該預處理步驟包括使氫氣(H2)流入該遠端電漿區及使該產生的電漿流出物流入該基板處理區中以移除覆蓋在一靠近表面處之鎢區上的一薄氧化鎢層而建立該暴露鎢區。
  9. 如請求項1所述之方法，其中該含氟前驅物包括四氟化碳。
  10. 如請求項1所述之方法，其中流入一含氟前驅物及氫氣(H2)的步驟造成進入該基板處理區中的一原子流量比(H：F)小於15：1。
  11. 如請求項1所述之方法，其中在該蝕刻步驟期間中，該基板處理區內的一壓力介於約0.01托耳(Torr)至約50托耳間。
  12. 如請求項1所述之方法，其中在該電漿區中形成一電漿以產生電漿流出物的步驟包括對該電漿區施加介於約10瓦(watts)至約400瓦之間的RF功率。
  13. 如請求項1所述之方法，其中在該蝕刻步驟期間，該基板的一溫度大於或約為-30℃且小於或約為400℃。
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US20140199850A1 (en) 2014-07-17

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