JP2012134475A - 酸化物半導体膜および半導体装置 - Google Patents
酸化物半導体膜および半導体装置 Download PDFInfo
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- JP2012134475A JP2012134475A JP2011260854A JP2011260854A JP2012134475A JP 2012134475 A JP2012134475 A JP 2012134475A JP 2011260854 A JP2011260854 A JP 2011260854A JP 2011260854 A JP2011260854 A JP 2011260854A JP 2012134475 A JP2012134475 A JP 2012134475A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
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Abstract
【解決手段】結晶性を有する領域を含み、当該結晶性を有する領域は、a−b面が膜表面に概略平行であり、c軸が膜表面に概略垂直である結晶よりなる酸化物半導体膜は、電気伝導度が安定しており、可視光や紫外光などの照射に対してもより電気的に安定な構造を有する。このような酸化物半導体膜をトランジスタに用いることによって、安定した電気的特性を有する、信頼性の高い半導体装置を提供することができる。
【選択図】図1
Description
本実施の形態では、本発明に係る一態様として、酸化物半導体膜について、図1乃至図5を用いて説明する。
本実施の形態では、実施の形態1に示す、結晶性を有する領域を含む酸化物半導体膜を用いたトランジスタおよび当該トランジスタの作製方法について図6乃至図10を用いて説明する。図6は、半導体装置の構成の一形態である、トップゲート構造のトランジスタ120の作製工程を示す断面図である。
本実施の形態では、先の実施の形態に示す、結晶性を有する領域を含む酸化物半導体膜を用いたトランジスタとは異なる構造のトランジスタについて図11および図12を用いて説明する。
本実施の形態では、同一基板上に少なくとも駆動回路の一部と、画素部に配置するトランジスタを作製する例について以下に説明する。
本明細書に開示する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ等のカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。上記実施の形態で説明した表示装置を具備する電子機器の例について説明する。
本項目では、先の実施の形態に従って酸化物半導体膜を作製し、当該酸化物半導体膜を透過型電子顕微鏡(TEM:transmission electron microscope)を用いて観察した結果について説明する。
本項目では、先の実施の形態に従って酸化物半導体膜を作製し、当該酸化物半導体膜を電子スピン共鳴(ESR:Electron Spin Resonance)法を用いて評価した結果について説明する。
本項目では、先の実施の形態に従って酸化物半導体膜を作製し、当該酸化物半導体膜を低温フォトルミネッセンス(PL:photoluminescence)測定を用いて評価した結果について説明する。
本実施例では、先の実施の形態に従って酸化物半導体膜を用いたトランジスタを作製し、当該トランジスタに光を照射しながらゲートに負電圧を印加してストレスを与え、ストレスを与えた時間に応じて変化するトランジスタのしきい値電圧を評価した結果について説明する。なお、このようなストレスによりトランジスタのしきい値電圧などが変化することを光負バイアス劣化という。
本項目では、先の実施の形態に従って酸化物半導体膜を用いたトランジスタを作製し、当該トランジスタに光応答欠陥評価法を用いて酸化物半導体膜の光照射に対する安定性を評価した結果について説明する。
本項目では、先の実施の形態に従って酸化物半導体膜を作製し、当該酸化物半導体膜をTDS(Thermal Desorption Spectroscopy)分析を用いて評価した結果について説明する。
本項目では、先の実施の形態に従って酸化物半導体膜を作製し、当該酸化物半導体膜を二次イオン質量分析(SIMS:Secondary Ion Mass Spectrometry)を用いて評価した結果について説明する。
12 In原子
13 Ga原子
14 Zn原子
15 O原子
31 処理室
33 排気手段
35 ガス供給手段
37 電源装置
40 基板支持体
41 ターゲット
43 イオン
45 原子
47 原子
51 基板
53 下地絶縁膜
55 酸化物半導体膜
56 酸化物半導体膜
59 酸化物半導体膜
63 ゲート絶縁膜
65 ゲート電極
69 絶縁膜
120 トランジスタ
130 トランジスタ
140 トランジスタ
150 トランジスタ
160 トランジスタ
170 トランジスタ
180 トランジスタ
351 基板
353 下地絶縁膜
359 酸化物半導体膜
363 ゲート絶縁膜
365 ゲート電極
369 絶縁膜
371 金属酸化物膜
373 金属酸化物膜
55a 種結晶
55b 酸化物半導体膜
56a 種結晶
56b 酸化物半導体膜
61a ソース電極
61b ドレイン電極
361a ソース電極
361b ドレイン電極
500 基板
501 画素部
502 走査線駆動回路
503 走査線駆動回路
504 信号線駆動回路
510 容量配線
512 ゲート配線
513 ゲート配線
514 ドレイン電極層
516 トランジスタ
517 トランジスタ
518 液晶素子
519 液晶素子
520 画素
521 スイッチング用トランジスタ
522 駆動用トランジスタ
523 容量素子
524 発光素子
525 信号線
526 走査線
527 電源線
528 共通電極
1001 本体
1002 筐体
1004 キーボードボタン
1021 本体
1022 固定部
1023 表示部
1024 操作ボタン
1025 外部メモリスロット
1030 筐体
1031 筐体
1032 表示パネル
1033 スピーカー
1034 マイクロフォン
1035 操作キー
1036 ポインティングデバイス
1037 カメラ用レンズ
1038 外部接続端子
1040 太陽電池セル
1041 外部メモリスロット
1050 テレビジョン装置
1051 筐体
1052 記憶媒体再生録画部
1053 表示部
1054 外部接続端子
1055 スタンド
1056 外部メモリ
1003a 表示部
1003b 表示部
Claims (11)
- 結晶性を有する領域を含み、
前記結晶性を有する領域は、a−b面が膜表面に概略平行であり、c軸が膜表面に概略垂直である結晶よりなり、
前記c軸方向から電子線を照射した電子線回折強度測定において、散乱ベクトルの大きさが3.3nm−1以上4.1nm−1以下のピークにおける半値全幅と、散乱ベクトルの大きさが5.5nm−1以上7.1nm−1以下のピークにおける半値全幅が0.2nm−1以上である酸化物半導体膜。 - 前記散乱ベクトルの大きさが3.3nm−1以上4.1nm−1以下のピークにおける半値全幅が0.4nm−1以上0.7nm−1以下であり、
前記散乱ベクトルの大きさが5.5nm−1以上7.1nm−1以下のピークにおける半値全幅が0.45nm−1以上1.4nm−1以下である請求項1に記載の酸化物半導体膜。 - ESR測定におけるg=1.93近傍のピークのスピン密度が1.3×1018(spins/cm3)より小さい請求項1または2に記載の酸化物半導体膜。
- 前記結晶性を有する領域を複数含み、結晶のa軸あるいはb軸の方向は、互いに異なる請求項1乃至請求項3のいずれか一に記載の酸化物半導体膜。
- InGaO3(ZnO)m(mは非自然数)で表される構造を有する請求項1乃至請求項4のいずれか一に記載の酸化物半導体膜。
- 第1の絶縁膜と、
前記第1の絶縁膜上に設けられた、結晶性を有する領域を含む酸化物半導体膜と、
前記酸化物半導体膜と接するように設けられたソース電極およびドレイン電極と、
前記酸化物半導体膜上に設けられた第2の絶縁膜と、
前記第2の絶縁膜上に設けられたゲート電極と、を有し、
前記結晶性を有する領域は、a−b面が膜表面に概略平行であり、c軸が膜表面に概略垂直である結晶よりなる半導体装置。 - ゲート電極と、
前記ゲート電極上に設けられた第1の絶縁膜と、
前記第1の絶縁膜上に設けられた、結晶性を有する領域を含む酸化物半導体膜と、
前記酸化物半導体膜と接するように設けられたソース電極およびドレイン電極と、
前記酸化物半導体膜上に設けられた第2の絶縁膜と、を有し、
前記結晶性を有する領域は、a−b面が膜表面に概略平行であり、c軸が膜表面に概略垂直である結晶よりなる半導体装置。 - 前記第1の絶縁膜と前記酸化物半導体膜の間に第1の金属酸化物膜を有し、
前記第1の金属酸化物膜は、酸化ガリウムと酸化亜鉛とを含み、且つ結晶性を有する領域を含み、
前記結晶性を有する領域は、a−b面が膜表面に概略平行であり、c軸が膜表面に概略垂直である結晶よりなる請求項6または7に記載の半導体装置。 - 前記第1の金属酸化物膜において、酸化亜鉛の物質量は酸化ガリウムの物質量の25%未満である請求項8に記載の半導体装置。
- 前記酸化物半導体膜と前記第2の絶縁膜の間に第2の金属酸化物膜を有し、
前記第2の金属酸化物膜は、酸化ガリウムと酸化亜鉛とを含み、且つ結晶性を有する領域を含み、
前記結晶性を有する領域は、a−b面が膜表面に概略平行であり、c軸が膜表面に概略垂直である結晶よりなる請求項6乃至請求項9のいずれか一に記載の半導体装置。 - 前記第2の金属酸化物膜において、酸化亜鉛の物質量は酸化ガリウムの物質量の25%未満である請求項10に記載の半導体装置。
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