JP2015038980A - 酸化物半導体膜、酸化物半導体膜の作製方法および半導体装置 - Google Patents
酸化物半導体膜、酸化物半導体膜の作製方法および半導体装置 Download PDFInfo
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- JP2015038980A JP2015038980A JP2014145552A JP2014145552A JP2015038980A JP 2015038980 A JP2015038980 A JP 2015038980A JP 2014145552 A JP2014145552 A JP 2014145552A JP 2014145552 A JP2014145552 A JP 2014145552A JP 2015038980 A JP2015038980 A JP 2015038980A
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- 230000005540 biological transmission Effects 0.000 claims abstract description 9
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000002245 particle Substances 0.000 claims abstract description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 54
- 239000011701 zinc Substances 0.000 claims description 34
- 150000002500 ions Chemical class 0.000 claims description 7
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- 229910052581 Si3N4 Inorganic materials 0.000 description 35
- 239000001257 hydrogen Substances 0.000 description 35
- 229910052739 hydrogen Inorganic materials 0.000 description 35
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- 238000003776 cleavage reaction Methods 0.000 description 21
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- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
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- 239000000969 carrier Substances 0.000 description 4
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- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
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- 229910052727 yttrium Inorganic materials 0.000 description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 4
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Physical Vapour Deposition (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Semiconductor Memories (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
以下では、トランジスタの半導体膜に用いることが可能な酸化物半導体膜の構造について説明する。
以下では、本発明の一態様に係る結晶性の酸化物半導体膜であるnc−OS膜について説明する。
以下では、高い結晶性を有するターゲットからペレットを剥離させる方法について説明する。
以下では、上述の方法で成膜したnc−OS膜の物性について説明する。なお、nc−OS膜がIn−Ga−Zn酸化物膜である場合について例示する。
上述したnc−OS膜は、例えば、トランジスタの半導体膜などとして用いることができる。
以下では、本発明の一態様に係るトランジスタの構造および作製方法について説明する。
まず、トップゲートトップコンタクト型のトランジスタの一例について説明する。
次に、ボトムゲートトップコンタクト型のトランジスタの一例について説明する。
以下では、上述したトランジスタを適用した表示装置について説明する。
以下では、上述したトランジスタを有する半導体記憶装置であるメモリセルの回路構成およびその動作について、図16を参照して説明する。
以下では、メモリ1と異なる半導体記憶装置の回路構成およびその動作について、図17を参照して説明する。
図18は、上述したトランジスタまたは半導体記憶装置を少なくとも一部に用いたCPUの具体的な構成を示すブロック図である。
図19(A)において、テレビジョン装置8000は、筐体8001に表示部8002が組み込まれており、表示部8002により映像を表示し、スピーカー部8003から音声を出力することが可能である。
103 nc−OS膜
120 イオン
130 領域
150 基板
160 バッキングプレート
170a マグネット
170b マグネット
170c マグネット
180 ターゲット
185 劈開面
190 磁力線
200 基板
202 下地絶縁膜
204 ゲート電極
206 酸化物半導体膜
212 ゲート絶縁膜
216a ソース電極
216b ドレイン電極
218 保護絶縁膜
226a 配線
226b 配線
300 基板
304 ゲート電極
306 酸化物半導体膜
312 ゲート絶縁膜
316a ソース電極
316b ドレイン電極
318 保護絶縁膜
326a 配線
326b 配線
500 メモリセル
511 トランジスタ
512 トランジスタ
513 トランジスタ
514 容量素子
600 記憶装置
602 記憶素子部
604 駆動回路
606 駆動回路
608 記憶素子
610 記憶回路
612 記憶回路
614 トランジスタ
616 トランジスタ
618 トランジスタ
620 トランジスタ
622 トランジスタ
624 トランジスタ
626 トランジスタ
628 トランジスタ
630 端子
632 端子
634 端子
636 端子
638 端子
640 データ保持部
642 データ保持部
644 データ保持部
646 データ保持部
648 容量素子
650 容量素子
701 画素部
702 トランジスタ
703 画素
704 走査線駆動回路
705 容量素子
705a 容量素子
706 信号線駆動回路
707 走査線
709 信号線
715 容量線
721 液晶素子
731 発光素子
733 トランジスタ
735 トランジスタ
737 配線
739 配線
741 配線
811 基板
813 ゲート電極
815 ゲート絶縁膜
815a 窒化物絶縁膜
815b 酸化物絶縁膜
817a 酸化物半導体膜
817b 導電膜
819 電極
820 電極
883 酸化物絶縁膜
885 酸化物絶縁膜
887 窒化物絶縁膜
891 ゲート電極
892 電極
893 開口部
894 開口部
1141 スイッチング素子
1142 メモリセル
1143 メモリセル群
1189 ROMインターフェース
1190 基板
1191 ALU
1192 ALUコントローラ
1193 インストラクションデコーダ
1194 インタラプトコントローラ
1195 タイミングコントローラ
1196 レジスタ
1197 レジスタコントローラ
1198 バスインターフェース
1199 ROM
8000 テレビジョン装置
8001 筐体
8002 表示部
8003 スピーカー部
8100 警報装置
8101 マイクロコンピュータ
8200 室内機
8201 筐体
8202 送風口
8203 CPU
8204 室外機
8300 電気冷凍冷蔵庫
8301 筐体
8302 冷蔵室用扉
8303 冷凍室用扉
8304 CPU
9700 電気自動車
9701 二次電池
9702 制御回路
9703 駆動装置
9704 処理装置
Claims (6)
- インジウム原子および酸素原子を有する層の上下を、ガリウム原子、亜鉛原子および酸素原子を有する層によって挟んだ構造を有する複数の平板状の粒子を有し、
複数の前記平板状の粒子の向きが不規則に配置され、
透過型電子顕微鏡によって、結晶粒界が確認されないことを特徴とする酸化物半導体膜。 - 請求項1において、
前記平板状の粒子は、厚さが0.5nm以上0.9nm以下であり、かつ平面の円相当径が1nm以上3nm以下であることを特徴とする酸化物半導体膜。 - 請求項1または請求項2において、
前記平板状の粒子は、原子配列の秩序性を有することを特徴とする酸化物半導体膜。 - 結晶性In−Ga−Zn酸化物を含むターゲットにイオンを衝突させることで、インジウム原子および酸素原子を有する層の上下を、ガリウム原子、亜鉛原子および酸素原子を有する層によって挟んだ構造を有する複数の平板状の粒子を剥離させ、
前記平板状の粒子を、表面温度が15℃以上35℃以下の基板上に不規則に堆積させることを特徴とする酸化物半導体膜の作製方法。 - 請求項4において、
前記ターゲットに含まれる前記結晶性In−Ga−Zn酸化物の組成式がInGaZnO4であることを特徴とする酸化物半導体膜の作製方法。 - ゲート電極と、
前記ゲート電極と接するゲート絶縁膜と、
前記ゲート絶縁膜を介して前記ゲート電極と向かい合う請求項1乃至請求項3のいずれか一に記載の酸化物半導体膜と、を有することを特徴とする半導体装置。
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KR102274659B1 (ko) | 2021-07-09 |
US9583632B2 (en) | 2017-02-28 |
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US20150021593A1 (en) | 2015-01-22 |
TW201505073A (zh) | 2015-02-01 |
KR20150010572A (ko) | 2015-01-28 |
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