TW201903835A - 無水的蝕刻方法 - Google Patents

無水的蝕刻方法 Download PDF

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TW201903835A
TW201903835A TW107117859A TW107117859A TW201903835A TW 201903835 A TW201903835 A TW 201903835A TW 107117859 A TW107117859 A TW 107117859A TW 107117859 A TW107117859 A TW 107117859A TW 201903835 A TW201903835 A TW 201903835A
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陳智君
徐霖
王安川
尼汀 茵可
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美商應用材料股份有限公司
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Abstract

示例性清潔或蝕刻方法可包括使含氟前驅物流入半導體處理腔室的遠端電漿區域中。方法可包括在遠端電漿區域內形成電漿，以產生含氟前驅物的電漿流出物。方法還可包括使電漿流出物流入半導體處理腔室的處理區域中。基板可位於處理區域內，且基板可包括曝露氧化物的區域和曝露金屬的區域。方法還可包括向處理區域提供含氫前驅物。方法可進一步包括移除曝露氧化物的至少一部分。

Description

無水的蝕刻方法
本技術關於半導體處理和配備。更具體地，本技術關於清潔或蝕刻高深寬比的結構。
藉由在基板表面上產生複雜圖案化的材料層的處理使積體電路成為可能。在基板上產生圖案化材料需要用於移除曝露材料的受控方法。化學蝕刻用於各種目的，包括將光阻中的圖案轉移到下面的層中，減薄層，或減薄已經存在於表面上的特徵的橫向尺寸。通常期望具有蝕刻一種材料比另一種材料更快的蝕刻處理，進而（例如）促進圖案轉移處理。據說此種蝕刻處理對第一種材料具有選擇性。由於材料、電路和處理的多樣性，已經開發出具有對各種材料的選擇性的蝕刻處理。
基於處理中使用的材料，蝕刻處理可被稱為濕式或乾式。濕式HF蝕刻相較於其他介電質和材料優先移除氧化矽。然而，濕式處理可能難以穿透一些受約束的溝槽，且有時可能使剩餘材料變形。在基板處理區域內形成的局部電漿中產生的乾式蝕刻可穿透更受約束的溝槽並且表現出更少的精細剩餘結構的變形。然而，局部電漿可能通過在它們放電時產生電弧而損壞基板。
因此，存在有可用以生產高品質裝置和結構的改進系統和方法的需求。本技術解決了該等和其他需求。
示例性清潔或蝕刻方法可包括使含氟前驅物流入半導體處理腔室的遠端電漿區域中。方法可包括在遠端電漿區域內形成電漿，以產生含氟前驅物的電漿流出物。方法還可包括使電漿流出物流入半導體處理腔室的處理區域中。基板可位於處理區域內，且基板可包括曝露氧化物的區域和曝露金屬的區域。方法還可包括向處理區域提供含氫前驅物。方法可進一步包括移除曝露氧化物的至少一部分。
在一些實施例中，方法可進一步包括將含氫前驅物在曝露氧化物的區域上冷凝。含氫前驅物可包括醇。醇可選自由以下所組成的群組：甲醇、乙醇、丙醇、丁醇和戊醇。方法可包括增加處理腔室內的壓力，同時移除曝露氧化物的至少一部分。壓力可增加至少約1 Torr。含氟前驅物可為或包括三氟化氮。方法還可包括降低處理腔室內的溫度，同時移除曝露氧化物的至少一部分。溫度可降低至少約5℃。金屬可選自由以下所組成的群組：鎢、鈷和銅。可在不向處理腔室提供水的情況下執行方法。當含氫前驅物提供給處理區域時，含氫前驅物可繞過遠端電漿區域。在移除操作期間，處理區域可保持無電漿。
本技術還可包括移除方法。方法可包括使含氟前驅物流入半導體處理腔室的處理區域中。處理區域可容納包含高深寬比特徵的基板，基板具有曝露氧化物的區域和曝露含金屬材料的區域。方法可包括在使含氟前驅物流入處理區域中的同時，向處理區域提供含氫前驅物以產生蝕刻劑。方法還可包括用蝕刻劑移除曝露氧化物的至少一部分。
在一些實施例中，蝕刻劑可在沒有潛伏期的情況下開始與氧化物反應。含氫前驅物可包括醇。含氟前驅物可為或包括氟化氫。方法可在低於或約10℃的處理溫度下進行。方法可在低於或約50 Torr的處理壓力下進行。金屬可選自由以下所組成的群組：鈷、鎢和銅。
與傳統系統和技術相比，此種技術可提供許多益處。例如，該處理可允許蝕刻高深寬比的特徵而不腐蝕曝露金屬。另外，該處理可允許不需要潛伏期的材料移除。結合以下的實施方式和附隨的圖式更詳細地描述該等和其他實施例以及許多它們的優點和特徵。
稀釋的酸可在許多不同的半導體處理中使用，用於清潔基板，並從該等基板移除材料。例如，稀釋的氫氟酸可為氧化矽的有效蝕刻劑，並可用以從矽表面移除氧化矽。在蝕刻或清潔操作完成之後，可從晶圓或基板表面乾燥酸。使用稀釋的氫氟酸（「DHF」）可稱為「濕式」蝕刻，且稀釋劑通常是水。可使用額外的蝕刻處理，其利用輸送到基板的前驅物。例如，電漿物種可與水蒸氣一起被輸送到晶圓，以形成蝕刻劑混合物。
雖然使用水溶液或水基處理的濕蝕刻劑可有效地用於某些基板結構，但是當在包括金屬材料的基板上使用時，水可能引起問題。例如，某些後來的製造處理（諸如產生氣隙）可能在基板上形成一定量的金屬化之後進行。若在蝕刻期間以某種方式使用水，則可能產生電解質，當電解質與金屬材料接觸時，可能導致電化學腐蝕發生，且金屬可能在各種處理中被腐蝕或取代。儘管一些傳統處理藉由利用替代前驅物避免了該問題，但是它們可能不適合於其中放置多個曝露材料的製造處理，其可包括氧化矽、氮化矽以及曝露金屬。
本技術藉由執行不使用水作為前驅物的氣相蝕刻處理而克服了該等問題。在不同實施​​例中，處理可使用或不使用電漿流出物作為蝕刻劑配方的一部分。該技術可能能夠相對於氮化矽、高品質氧化物及金屬和含金屬結構而選擇性地蝕刻氧化矽。另一個好處是藉由使用非水性材料，可最小化對基板特徵的影響，諸如藉由降低與水相關的高表面張力。關於蝕刻的術語「乾式」可用以表示在操作中不使用液態水，這與其中水可用作稀釋劑或成分（諸如DHF）的濕式蝕刻不同。
儘管其餘的揭露內容將常規地識別利用所揭露的技術的特定蝕刻處理，但是將容易理解的是，系統和方法同樣適用於在所描述的腔室中可能發生的沉積和清潔處理，以及其他蝕刻技術，包括可用曝露的金屬區域執行的後端產線氣隙形成和其他蝕刻。因此，該技術不應被視為限於僅與示例性蝕刻處理或腔室一起使用。此外，儘管描述了示例性腔室以為本技術提供基礎，但是應該理解本技術實際上可應用於可允許所描述的操作的任何半導體處理腔室。
第 1 圖 顯示了根據實施例的沉積、蝕刻、烘烤和固化腔室的處理系統100的一個實施例的頂部平面圖。在該圖式中，一對前開式晶圓傳送盒（FOUP）102供應各種尺寸的基板，該等基板由機械手臂104接收並在放入基板處理腔室108a-f之一者中之前放置在低壓保持區域106中，基板處理腔室108a-f位於串聯區段109a-c中。第二機械手臂110可用以將基板晶圓從保持區域106傳送到基板處理腔室108a-f並返回。除了循環層沉積（CLD）、原子層沉積（ALD）、化學氣相沉積（CVD）、物理氣相沉積（PVD）、蝕刻、預清潔、脫氣、取向和其他基板處理之外，每個基板處理腔室108a-f可配備以執行多種基板處理操作，包括於此所述的乾式蝕刻處理。
基板處理腔室108a-f可包括一個或多個系統部件，用於在基板晶圓上沉積、退火、固化及/或蝕刻介電質膜。在一種配置中，兩對處理腔室（如，108c-d和108e-f）可用以在基板上沉積介電質材料，且第三對處理腔室（如，108a-b）可用以蝕刻沉積的介電質。在另一種配置中，所有三對腔室（如，108a-f）可配置成蝕刻基板上的介電質膜。所描述的任何一個或多個處理可在與不同實施例中所示的製造系統分開的（多個）腔室中進行。將理解，系統100考慮了用於介電質膜的沉積、蝕刻、退火和固化腔室的附加配置。
第 2 圖 顯示了根據本技術的實施例的示例性處理系統200的示意性橫截面圖。系統200可包括處理腔室205和遠端電漿單元210。遠端電漿單元210可藉由一個或多個部件與處理腔室205耦接。遠端電漿單元210可與遠端電漿單元適配器215，隔離器220，壓力板225和入口適配器230，擴散器235，或混合歧管240的一個或多個耦接。混合歧管240可與處理腔室205的頂部耦接，且可與處理腔室205的入口耦接。
遠端電漿單元適配器215可在第一端211處與遠端電漿單元210耦接，並可在與第一端211相對的第二端212處與隔離器220耦接。通過遠端電漿單元適配器215可界定一個或多個通道。在第一端211處可界定通道213的開口或埠。通道213可在遠端電漿單元適配器215內居中地界定，且特徵可為第一橫截面表面積，第一橫截面表面積在正交於通過遠端電漿單元適配器215的中央軸的方向上，遠端電漿單元適配器215可在來自遠端電漿單元210的流動的方向上。通道213的直徑可與來自遠端電漿單元210的出口埠相等或一樣。通道213的特徵可為從第一端211到第二端212的長度。通道213可延伸通過遠端電漿單元適配器215的整個長度，或長度小於從第一端211到第二端212的長度。例如，通道213可延伸在從第一端211到第二端212的長度的一半以下，通道213可延伸在從第一端211到第二端212的長度的一半，或通道213可延伸在從第一端211到第二端212的長度的一半以上，或通道213可延伸在從遠端電漿單元適配器215的第一端211到第二端212的長度的約一半。
遠端電漿單元適配器215還可界定在遠端電漿單元適配器215下方界定的一個或多個溝槽214。溝槽214可為或包括在遠端電漿單元適配器215內界定的一個或多個環形凹部，以允許O形環或者彈性體元件的安放，O形環或者彈性體元件可允許與隔離器220耦接。
在實施例中，隔離器220可與遠端電漿單元適配器215的第二端212耦接。隔離器220可為或包括圍繞隔離器通道221的環形構件。隔離器通道221可在流過遠端電漿單元適配器215的方向上與中央軸線軸向對齊。隔離器通道221的特徵可在於第二橫截面積，第二橫截面積在正交於流過隔離器220的方向的方向上。第二橫截面積可等於，大於，或小於通道213的第一橫截面積。在實施例中，隔離器通道221的特徵可為比通過遠端電漿單元適配器215的通道213的直徑大，與之相等或約與之相同的直徑。
隔離器220可由與遠端電漿單元適配器215、混合歧管240，或任何其他腔室部件相似或不同的材料製成。在一些實施例中，雖然遠端電漿單元適配器215和混合歧管240可由鋁製成或包括鋁（包括鋁的氧化物，在一個或多個表面上的經處理的鋁，或一些其他材料），但隔離器220可為或包括導熱性比其他腔室部件低的材料。在一些實施例中，隔離器220可為或包括陶瓷，塑膠，或其他隔熱部件，配置成在遠端電漿單元210和腔室205之間提供熱中斷。在操作期間，遠端電漿單元210可被冷卻或在相對於腔室205較低的溫度下操作，而腔室205可被加熱或在相對於遠端電漿單元210較高的溫度下操作。提供陶瓷或熱絕緣隔離器220可防止或限制在部件之間的熱，電或其他干擾。
與隔離器220耦接的可為壓力板225。在實施例中，壓力板225可為或包括鋁或其他材料，且在實施例中，壓力板225可由與遠端電漿單元適配器215或混合歧管240相似或不同的材料製成，或包括與遠端電漿單元適配器215或混合歧管240相似或不同的材料。壓力板225可界定通過壓力板225的中央孔223。中央孔223的特徵在於通過壓力板225從靠近隔離器通道221的部分到壓力板225的相對側的錐形形狀。中央孔223靠近隔離器通道221的部分的特徵在於正交於流動方向的橫截面積等於或類似於隔離器通道221的橫截面積。中央孔223的特徵可在於錐形跨越壓力板225的長度的百分比大於或約10％，且在實施例中特徵可在於大於或約20％，大於或約30％，大於或約40％，大於或約50％，大於或約60％，大於或約70％，大於或約80％，大於或約90％，大於或約100％，大於或約150％，大於或約200％，大於或約300％，或更高的百分比。壓力板225還可界定在隔離器220下方界定的一個或多個溝槽224。溝槽224可為或包括界定在壓力板225內的一個或多個環形凹部，以允許O形環或彈性體元件的安放，這可允許與隔離器220耦接。
入口適配器230可在第一端226處與壓力板225耦接，並在與第一端226相對的第二端227處與擴散器235耦接。入口適配器230可界定通過入口適配器230而界定的中央通道228。中央通道228的特徵可在於第一部分229a和第二部分229b。第一部分229a可通過入口適配器230從第一端226延伸到第一長度，其中中央通道228可過渡到第二部分229b，第二部分229b可延伸到第二端227。第一部分229a的特徵可在於第一橫截面積或直徑，且第二部分229b的特徵可在於小於第一橫截面積或直徑的第二橫截面積或直徑。在實施例中，第一部分229a的橫截面積或直徑可為第二部分229b的橫截面積或直徑的兩倍大，且在實施例中可高達或大於約三倍大，大於或約4倍大，大於或約5倍大，大於或約6倍大，大於或約7倍大，大於或約8倍大，大於或約9倍大，大於或約10倍大或更大。在實施例中，中央通道228可配置為提供從遠端電漿單元210輸送的前驅物的電漿流出物，電漿流出物可通過遠端電漿單元適配器215的通道213、隔離器220的隔離器通道221和壓力板225的中央孔223。
入口適配器230還可界定一個或多個第二通道231，一個或多個第二通道231可從第一部分229a的下方延伸到第二端227或通過第二端227。第二通道231的特徵可在於在正交於通過入口適配器230的中央軸的方向上的第二橫截面表面積。在實施例中，第二橫截面表面積可小於第一部分229a的橫截面表面積，並可大於第二部分229b的橫截面表面積或直徑。第二通道231可在第二端227處延伸到入口適配器230的出口，並可從適配器230提供出路，用於從遠端電漿單元210交替地輸送的前驅物（諸如第一旁路前驅物）。例如，第二通道231可從沿著入口適配器230的外表面（諸如側面）而界定的第一埠232流體地進入，第一埠232可繞過遠端電漿單元210。第一埠232可沿著入口適配器230的長度位於第一部分229a處或下方，且可配置為提供對第二通道231的流體通路。
第二通道231可輸送前驅物通過入口適配器230並且從第二端227離開。第二通道231可界定在第一部分229a和第二端227之間的入口適配器230的區域中。在實施例中，第二通道231可不從中央通道228進入。第二通道231可配置成保持前驅物與從遠端電漿單元210輸送到中央通道228中的電漿流出物流體隔離。第一旁路前驅物可不接觸電漿流出物，直到通過第二端離開入口適配器230。第二通道231可包括在適配器230中界定的一個或多個通道。第二通道231可位於適配器230內的中央，且可與中央通道228相關聯。例如，在實施例中，第二通道231可同心地對齊並界定在中央通道228周圍。在實施例中，第二通道231可為環形或圓柱形通道，部分地延伸通過入口適配器230的長度或垂直橫截面。在一些實施例中，第二通道231也可為圍繞中央通道228徑向延伸的複數個通道。
入口適配器230還可界定一個或多個第三通道233，一個或多個第三通道233可從第一部分229a的下方延伸到第二端227或通過第二端227，並可從平分第一埠232的平面下方延伸。第三通道233的特徵可在於正交於通過入口適配器230的中央軸的方向上的第三橫截面表面積。在實施例中，第三橫截面表面積可小於第一部分229a的橫截面表面積，並可大於第二部分229b的橫截面表面積或直徑。第三橫截面表面積也可等於或類似於所示的第一部分229a的橫截面表面積或直徑。例如，第三通道233的外徑可等於第一部分229a的外徑，或可小於第一部分229a的外徑。第三通道233可在第二端227處延伸到入口適配器230的出口，並可從適配器230提供出路，用於從遠端電漿單元210交替地輸送的前驅物（諸如第二旁路前驅物）。例如，第三通道233可從沿著入口適配器230的外表面（諸如側面）界定的第二埠234流體地進入，第二埠234可繞過遠端電漿單元210。第二埠234可如第一埠232般位於入口適配器230的相對側或部分上。第二埠234可沿著入口適配器230的長度位於第一部分229a處或下方，並可配置成提供到第三通道233的流體通路。在實施例中，第二埠234也可沿著入口適配器230的長度位於第一埠232處或下方。
第三通道233可輸送第二旁路前驅物通過入口適配器230並從第二端227離開。第三通道233可界定在第一部分229a和第二端227之間的入口適配器230的區域中。在實施例中，第三通道233可不從中央通道228進入。第三通道233可配置成保持第二旁路前驅物與從遠端電漿單元210輸送到中央通道228中的電漿流出物流體隔離，及與通過第一埠232輸送到第二通道231中的第一旁路前驅物流體隔離。第二旁路前驅物可不接觸電漿流出物或第一旁路前驅物，直到通過第二端227離開入口適配器230。第三通道233可包括在適配器230中界定的一個或多個通道。第三通道233可置中地位於適配器230內，並可與中央通道228和第二通道231相關聯。例如，在實施例中，第三通道233可同心地對準並圍繞中央通道228而界定，且可同心地對準並圍繞第二通道231而界定。在實施例中，第三通道233可為部分地延伸通過入口適配器230的長度或垂直橫截面的第二環形或圓柱形通道。在一些實施例中，第三通道233還可為圍繞中央通道228徑向延伸的複數個通道。
擴散器235可定位在入口適配器230和混合歧管240之間，以保持通過入口適配器230輸送的前驅物流體隔離，直到進入混合歧管240。擴散器235的特徵可在於一個或多個通道，諸如通過擴散器235而界定的圓柱形或環形通道。在實施例中，擴散器235可界定第一通道236或中央通道、第二通道237和第三通道238。通道的特徵可在於與入口適配器230的中央通道228的第二部分229b、第二通道237和第三通道238的相似尺寸或直徑。例如，每個通道可將入口適配器通道延伸到混合歧管240。第二通道237和第三通道238可各自為圍繞第一通道236界定的環形通道，且在實施例中，第一通道236、第二通道237和第三通道238可同心地對準並通過擴散器235而界定。
擴散器235可另外在擴散器235周圍界定一個或多個溝槽239。例如，在實施例中，擴散器235可界定第一溝槽239a、第二溝槽239b和第三溝槽239c，這可允許O形環或彈性體構件安放於入口適配器230和擴散器235之間。在實施例中，溝槽239的每一者可為環形溝槽，​​位於通過擴散器235而界定的一個或多個通道的徑向外部。第一溝槽239a可位於第一通道236的徑向外側，可位於第一通道236和第二通道237之間。第二溝槽239b可位於第二通道237的徑向外側，且可位於第二通道237和第三通道238之間。第三溝槽239c可位於第三通道238的徑向外側。每個溝槽239的直徑可大於可與之相關聯且可位於徑向外部的通道。溝槽可改善在入口適配器230和擴散器235之間的密封，以確保前驅物在部件之間保持流體隔離，且不會發生在通道之間的洩漏。
混合歧管240可在第一端241處與擴散器235耦接，並可在第二端242處與腔室205耦接。混合歧管240可在第一端241處界定入口243。入口243可提供來自擴散器235的流體通路，且入口243的特徵可在於直徑等於或約相同於通過擴散器235的第三通道238的直徑。入口243可界定通過混合歧管240的通道244的一部分，且通道244可由界定通道244的輪廓的一個或多個部分構成。入口243可為通過混合歧管240的通道244的流動方向上的第一部分。入口243的特徵可在於長度可小於在混合歧管240的流動方向上的一半長度。入口243的長度也可小於混合歧管240的長度的三分之一，且在實施例中可小於混合歧管240的長度的四分之一。入口243可從擴散器235接收每個前驅物，並可允許前驅物的混合，前驅物可保持流體隔離直到輸送到混合歧管240。
入口243可延伸到通道244的第二部分，第二部分可為或包括錐形部分245。錐形部分245可從等於或類似於入口243的直徑的第一直徑延伸到小於第一直徑的第二直徑。在一些實施例中，第二直徑可為約或小於第一直徑的一半。在實施例中，錐形部分245的特徵可在於錐形的百分比大於或約10％，大於或約20％，大於或約30％，大於或約40％，大於或約50％，大於或約60％，大於或約70％，大於或約80％，大於或約90％，大於或約100％，大於或約150％，大於或約200％，大於或約為300％或更高。
錐形部分245可過渡到通道244的第三區域，第三區域可為喇叭形部分246。喇叭形部分246可從錐形部分245延伸到第二端242處的混合歧管240的出口。喇叭形部分246可從等於錐形部分245的第二直徑的第一直徑延伸到大於第一直徑的第二直徑。在一些實施例中，第二直徑可為約或大於第一直徑的兩倍。在實施例中，喇叭形部分246的特徵可在於喇叭的百分比大於或約10％，大於或約20％，大於或約30％，大於或約40％，大於或約50％，大於或約60％，大於或約70％，大於或約80％，大於或約90％，大於或約100％，大於或約150％，大於或約200％，大於或約300％或更高。
喇叭形部分246可經由出口247提供通過第二端242的出路給通過混合歧管240而輸送的前驅物。通道244通過混合歧管240的部分可配置成在將混合前驅物提供到腔室205中之前，提供輸送到混合歧管的前驅物的充分或徹底混合。與傳統技術不同，藉由在輸送到腔室之前執行蝕刻劑或前驅物混合，本系統可在腔室和基板周圍分配蝕刻劑之前提供具有均勻性質的蝕刻劑。以此方式，利用本技術執行的處理可遍布基板表面具有更均勻的結果。
腔室205可包括堆疊佈置中的多個部件。腔室堆疊可包括氣體箱250、阻擋板260、面板270、離子抑制元件280和蓋間隔件290。該等部件可用以將前驅物或一組前驅物通過腔室分配，以提供將蝕刻劑或其他前驅物均勻輸送到基板上進行處理。在實施例中，該等部件可為堆疊板，每個板至少部分地界定腔室205的外部。
氣體箱250可界定腔室入口252。中央通道254可通過氣體箱250界定，以將前驅物輸送到腔室205中。入口252可與混合歧管240的出口247對準。在實施例中，入口252及/或中央通道254的特徵可在於類似的直徑。中央通道254可延伸通過氣體箱250並配置成將一個或多個前驅物輸送到由氣體箱250從上方界定的容積257中。氣體箱250可包括第一表面253（諸如頂表面），以及與第一表面253相對的第二表面255（諸如氣體箱250的底表面）。在實施例中，頂表面253可為平坦或基本平坦的表面。與頂表面253耦接的可為加熱器248。
在實施例中，加熱器248可配置成加熱腔室205，且可導電地加熱每個蓋堆疊部件。加熱器248可為任何類型的加熱器，包括流體加熱器，電加熱器，微波加熱器，或配置成將熱傳導地輸送到腔室205的其他裝置。在一些實施例中，加熱器248可為或包括以繞氣體箱250的第一表面253的環形圖案而形成的電加熱器。加熱器可跨越氣體箱250界定，並圍繞混合歧管240。加熱器可為板式加熱器或電阻元件加熱器，可配置成提供高達，約，或大於約2,000W的加熱，且可配置成提供大於或約2,500W，大於或約3,000W，大於或約3,500W，大於或約4,000W，大於或約4,500W，大於或約5,000W或更多。
在實施例中，加熱器248可配置成產生高達，約，或大於約50℃的可變腔室部件溫度，且可配置成產生大於或約75℃，大於或約100℃，大於或約150℃，大於或約200℃，大於或約250℃，大於或約300℃，或更高的腔室部件溫度。加熱器248可配置成將各個部件（諸如離子抑制元件280）升高到該等溫度中的任一個，以促進處理操作，諸如退火。在一些處理操作中，基板可朝向離子抑制元件280升高以進行退火操作，並可調節加熱器248以將加熱器的溫度傳導地升高到上述任何特定溫度，或在任何宣稱溫度內或之間的溫度的任何範圍內。
氣體箱250的第二表面255可與阻擋板260耦接。阻擋板260的特徵可在於直徑等於或類似於氣體箱250的直徑。阻擋板260可界定通過阻擋板260的複數個孔263，僅顯示了其樣品，複數個孔263可允許來自容積257的前驅物（諸如蝕刻劑）的分配，並可開始通過腔室205分配前驅物以均勻地輸送到基板。儘管僅顯示了幾個孔263，但是應該理解阻擋板260可具有通過結構而界定的任何數量的孔263。阻擋板260的特徵可在於在阻擋板260的外徑處的升高環形部分265，及在阻擋板260的外徑處的降低環形部分266。在實施例中，升高環形部分265可為阻擋板260提供結構剛度，並可界定容積257的側面或外徑。阻擋板260還可從下方界定容積257的底部。容積257可允許在通過阻擋板260的孔263之前從氣體箱250的中央通道254分配前驅物。在實施例中，降低環形部分266還可為阻擋板260提供結構剛性，並可界定第二容積258的側面或外徑。阻擋板260還可從上方界定容積258的頂部，而容積258的底部可由面板270從下方界定。
面板270可包括第一表面272和與第一表面272相對的第二表面274。面板270可在第一表面272處與阻擋板260耦接，第一表面272可嚙合阻擋板260的降低環形部分266。面板270可在第二表面274的內部界定凸緣273，第二表面274延伸到至少部分地界定在面板270內或由面板270界定的第三容積275。例如，面板270可界定第三容積275的側面或外徑以及從上方界定容積275的頂部，而離子抑制元件280可從下方界定第三容積275。面板270可界定通過面板的複數個通道，儘管第2圖中未顯示。
離子抑制元件280可定位在面板270的第二表面274附近，並可在第二表面274處與面板270耦接。離子抑制元件280可配置成減少離子遷移到容納基板的腔室205的處理區域中。離子抑制元件280可界定通過該結構的複數個孔，儘管第2圖中未顯示。在實施例中，氣體箱250、阻擋板260、面板270和離子抑制元件280可耦接在一起，且在實施例中可直接耦接在一起。藉由直接耦接部件，加熱器248產生的熱量可通過部件而傳導，以維持特定的腔室溫度，該溫度可保持在部件之間的較小變化。離子抑制元件280還可接觸蓋間隔件290，離子抑制元件280和蓋間隔件290可一起至少部分地界定電漿處理區域，在處理期間基板保持在電漿處理區域。
先前討論的腔室可在執行包括蝕刻方法的示例性方法中使用。轉到第 3 圖 顯示了根據本技術的實施例的方法300中的示例性操作。在該方法的第一次操作之前，可在將基板放置在可執行方法300的腔室的處理區域內之前，以一種或多種方式處理基板。例如，溝槽，孔，或其他特徵可形成在基板中，基板可包括矽基板。該處理可包括形成各種結構，結構可包括金屬化以及形成襯裡和其他結構特徵，以分離基板上的節點。該等操作的一些或全部可如前所述在腔室或系統工具中執行，或可在相同的系統工具上的不同腔室中執行，系統工具可包括執行方法300的操作的腔室。
方法300可包括在操作305處將含氟前驅物流入半導體處理腔室的遠端電漿區域中。示例性腔室可為先前描述的腔室205，腔室205可包括RPS單元210或腔室內的第一電漿區域的一者或兩者。該等區域的任一個或兩個可為在操作305中使用的遠端電漿區域。在操作310處，可在遠端電漿區域內產生電漿，這可產生含氟前驅物的電漿流出物。在操作315處，電漿流出物可流到腔室的處理區域。電漿流出物可與處理區域中的基板相互作用，這可包括各種結構特徵和形成（包括多種材料），或任何其他基板或元件的組合，如在半導體製造中將理解的那樣。
基板可包括曝露氧化物的區域，氧化物可來自一個或多個源。例如，氧化物可為在形成溝槽或其他特徵之後保留的氧化物硬遮罩，且可為熱氧化物。氧化物也可為或包括在包括CVD或其他沉積的介電質材料的節點之間已經形成的氧化物的層。在操作320處，可將含氫前驅物與電漿流出物一起提供給處理區域。在操作325處，電漿流出物和含氫前驅物可與曝露氧化物相互作用，以移除曝露氧化物的至少一部分。
方法中使用的前驅物可包括含氟前驅物或含鹵素前驅物。示例性的含氟前驅物可為三氟化氮（NF3 ），三氟化氮可流入遠端電漿區域中，遠端電漿區域可與處理區域分離，但是與處理區域流體耦接。其他氟的源可與三氟化氮結合使用或作為三氟化氮的替代物使用。通常，含氟前驅物可流入遠端電漿區域中，且含氟前驅物可包括選自由以下的群組的至少一種前驅物：原子氟、雙原子氟、三氟化氮、四氟化碳、氟化氫、二氟化氙和在半導體處理中使用或可用的各種其它含氟前驅物。前驅物還可包括任何數量的載氣，載氣可包括氮氣、氦氣、氬氣，或其他稀有、惰性，或有用的前驅物。
含氫前驅物可包括氫、烴、醇、過氧化氫，或如熟悉本領域者所理解的可包括氫的其他材料。次要的前驅物也可包括額外的前驅物，諸如載氣或惰性材料。前驅物的一個或多個可繞過遠端電漿區域並流入處理腔室的額外區域中。該等前驅物可與處理區域或腔室的一些其他區域中的電漿流出物混合。例如，當含氟前驅物流過遠端電漿區域以產生含氟電漿流出物時，含氫前驅物可繞過遠端電漿區域。含氫前驅物可藉由在腔室的頂部的旁路而繞過遠端電漿區域，或者可流入腔室的單獨區域中，諸如通過提供進入前述部件的埠。含氫前驅物可接著流入處理區域中，在那裡它可接著與含氟電漿流出物混合或相互作用。在實施例中，在移除操作期間，電漿處理區域可保持無電漿。無電漿意味著在操作期間可能不會在處理區域內主動形成電漿，儘管可在操作期間使用如前所述的遠端產生的電漿流出物。
在一些實施例中，含氫前驅物可不是水，且在一些實施例中，水可不作為前驅物而輸送到處理區域中。可在其上執行方法300的基板可包括具有金屬或含金屬材料的曝露區域以及氧化物的曝露區域的基板。可能曝露的額外材料包括矽、氮化物、氧化物（包括金屬氮化物或金屬氧化物）。蝕刻處理可包括使含氫前驅物在基板的一個或多個區域上或遍布基板的表面冷凝。含氟電漿流出物可接著與液體相互作用，以產生蝕刻劑。利用水作為前驅物之一的蝕刻處理也可使金屬或含金屬材料曝露於水，這可能腐蝕材料。例如，可能發生電化腐蝕，電化腐蝕可能蝕刻或移位金屬的部分，使結構變形。因此，當不包括水作為前驅物時，可限制或避免此種類型的腐蝕或變形。
用醇和含鹵素前驅物（可為含氟前驅物或其他鹵素）的反應處理可使含氟材料解離，以形成蝕刻劑。氧化矽可接收質子，諸如氫，可接著藉由蝕刻劑蝕刻質子，以產生揮發性成分和其他反應副產物。在一些實施例中，反應副產物可包括水。儘管可產生水，但是水的量可比使用水作為前驅物的處理少得多，且因此作為反應副產物產生的水可為可接受的。另外，醇還可幫助帶走和移除水副產物，以免與基板上的金屬或含金屬材料相互作用。
在本技術中使用的醇可包括任何包括鍵合的-OH的材料，且可包括一元醇，多元醇，脂族醇，或脂環族醇。示例性醇可包括甲醇，乙醇，丙醇，丁醇，戊醇，二醇，三醇，或其他含醇材料。例如，在一些實施例中可使用乙醇，且在一些實施例中可使用丁醇。較長鏈的醇的特徵可在於較低的蒸氣壓，這可促進冷凝，從而實現某些蝕刻處理或增加蝕刻速率。較長鏈的醇還可促進較低的處理腔室壓力，這可減少氮化物蝕刻，與氮化物的曝露區域相比增加氧化物蝕刻的選擇性。
本技術的另一個益處是處理的特徵可在於在蝕刻之前的潛伏。利用電漿前驅物或水的一些處理可在開始蝕刻之前具有一段潛伏期，蝕刻可接著更快地發生。因為等待期間之後快速蝕刻，該等處理可能更難以調整。另外，一些傳統技術可能執行產生固體副產物的處理，固體副產物在連續蝕刻之前被移除，這可在蝕刻的循環中並接著移除副產物來執行。對於高深寬比特徵，這種處理可能更耗時，這可能需要許多循環來完成蝕刻處理。本技術可能不會遭受該等缺陷，因為可能不會形成固體副產物，且蝕刻可能在與氧化物材料接觸時開始。例如，可為醇的含氫前驅物可在基板的表面上冷凝，並可與含氟前驅物相互作用，含氟前驅物可解離並開始蝕刻而不需要潛伏。
參考第 4A-4B 圖 可進一步理解本技術的其他態樣。第4圖顯示了根據本技術的實施例處理的基板的橫截面圖。從第4A圖開始顯示了可利用本技術的基板的橫截面圖。例如，矽基板405可具有在表面內或表面上形成或界定的一個或多個特徵。表面可具有包括金屬或含金屬材料的一種或多種材料形成。例如，基板405可具有覆蓋材料，包括襯裡、矽化物和電晶體形成中使用的其他材料。如圖所示，基板405可具有形成的矽化物材料410，矽化物材料410可為含金屬的材料，諸如矽化鈷，例如，或可促進在矽基板上的金屬形成的任何其他材料。
例如，基板還可包括襯裡材料415，襯裡材料415可為氮化物，諸如含金屬的氮化物，諸如氮化鈦。結構可界定一個或多個溝槽425。例如，在溝槽425內及或沿著基板的表面，可為金屬材料420，諸如鎢，鈷，或銅。另外，在溝槽內，可為覆蓋金屬材料420的氮化物材料430。在金屬材料420和氮化物材料430的任一側上可為氧化物材料435。在本技術所涵蓋的實施例中，可移除氧化物材料435，以在金屬材料420周圍產生氣隙。溝槽425可為如前所述的高深寬比溝槽，並可具有大於10，大於50，大於100，或在該等數字的任何一個內的深寬比，或可形成更深、更窄的溝槽。第4圖僅包括示例性結構和材料，且根據本技術，任何材料在其他處理中可為不同的。例如，金屬或含金屬材料可包括鎢，鈷，銅，鈦，或其他金屬，且可包括氧化物，氮化物，矽化物，或包括任何該等材料的其他結構。例如，額外的化合物可包括氮化鈦、氮化鉭、矽化鈷，或在製造中使用的任何其他材料和含金屬材料。本技術同樣可應用於要移除氧化物材料的任何數量的結構中，且也可包括金屬的曝露區域。
可執行處理的操作（諸如先前描述的處理300的選定操作），以從矽基板405的表面移除曝露的氧化物材料。例如，含氫前驅物和含氟前驅物的電漿流出物可被輸送到處理區域，以至少部分地移除氧化物材料435。如第4B圖所示，蝕刻操作可從約金屬材料420和氮化物材料430移除氧化物材料，以提供氣隙。因為溝槽425連同任何其他特徵可能具有高深寬比，所以蝕刻處理可利用先前描述的材料以促進一致的蝕刻，而不需要移除副產物作為處理的操作。以此方式，可執行連續蝕刻處理，因為前驅物繼續被輸送到處理區域。另外，藉由使用醇作為前驅物之一，本技術可不移除或腐蝕基板周圍的可與蝕刻劑材料接觸的曝露金屬和含金屬材料。
處理條件還可影響在方法300中執行的操作以及根據本技術的其他移除方法。在實施例中，方法400的操作的每一個可在恆定溫度期間執行，而在一些實施例中，可在不同操作期間調整溫度。例如，在實施例中，方法300期間的基板、基座，或腔室溫度可保持在低於或約50℃。基板溫度也可保持在低於或約45℃，低於或約40℃，低於或約35℃，低於或約30℃，低於或約25℃，低於或約20℃，低於或約15℃，低於或約10℃，低於或約5℃，低於或約0℃，低於或約-5℃，或更低。藉由在實施例中使用可能不包括水的含氫前驅物，可使用較低的溫度，同時減少對基板上的冷凍的擔憂。溫度也可保持在該等範圍內，該等範圍所涵蓋的較小範圍內，或該等範圍的任一個之間的任何溫度。
在一些實施例中，移除操作325可在第一溫度和第二溫度下執行，或可在當溫度從第一溫度調節到第二溫度時執行。溫度的任一個或兩個可在先前描述的範圍的任一個內。在實施例中，第二溫度可低於第一溫度。例如，基板的溫度可從第一溫度降低到第二溫度。藉由降低基板的溫度，也可增加晶圓級的飽和度，而不會向處理腔室添加更多的前驅物。可接著減少前驅物液滴在腔室部件上或在基板上形成的機會，這可有助於減少或防止圖案變形或塌陷。
例如，在實施例中，第一溫度可小於或約20℃，第二溫度可小於或約10℃。溫度可在先前描述範圍的任一個內。在一些實施例中，第一溫度可為在約0℃至約20℃之間，在約1℃至約15℃之間，在約1℃至約10℃之間，或在實施例中可為約4℃，約5℃，約6℃，或約7℃。另外，在實施例中，第二溫度可為在約-5℃至約10℃之間，在約-5℃至約5℃之間，在約-1℃至約5℃之間，或在實施例中可為約1℃，約2℃，約3℃，或約4℃。在實施例中，在第一溫度和第二溫度之間的溫度降低可為至少約2℃，且可為至少或約3℃，至少或約4℃，至少或約5℃，至少或約6℃，至少或約7℃，至少或約8℃，至少或約9℃，至少或約10℃，至少或約11℃，至少或約12℃或更高。另外，溫度降低可小於或約15℃，或該等範圍的任一個之間或該等範圍的任何內的任何較小範圍。
腔室內的壓力也可影響所執行的操作，且在實施例中，腔室壓力可保持低於約50 Torr，低於或約40 Torr，低於或約30 Torr，低於或約25 Torr，低於或約為20 Torr，低於或約15 Torr，低於或約10 Torr，低於或約5 Torr，低於或約1 Torr，或更低。壓力也可保持在該等範圍內，該等範圍所涵蓋的較小範圍內，或該等範圍的任一個之間的任何壓力。藉由在低於約30 Torr的壓力下進行操作，可提高處理相對於含氮材料的選擇性。
在一些實施例中，移除操作325可在第一壓力和第二壓力下執行，且可在當調節腔室內的壓力時執行。壓力的任一個或兩個可在先前描述的範圍的任一個內。在實施例中，第二壓力可高於第一壓力。例如，處理腔室內的壓力可從第一壓力增加到第二壓力。藉由增加腔室內的壓力，也可增加晶圓級的冷凝，而不會向處理腔室添加更多的前驅物。可接著減少在腔室部件上或在基板上形成液滴的機會，這也可有助於減少或防止圖案變形或坍塌。
例如，在實施例中，第一壓力可小於或約20 Torr，且第二壓力可大於或約30 Torr。在實施例中，第一壓力可在約1 Torr和約25 Torr之間，在約1 Torr和約20 Torr之間，在約1 Torr和約15 Torr之間，或可在前述範圍的任一個內。在一些實施例中，第二壓力可在約0 Torr和約30 Torr之間，在約5 Torr和約25 Torr之間，在約10 Torr和約20 Torr之間，或可在前述範圍的任一個內。在實施例中，在第一壓力和第二壓力之間的壓力增加可為至少約1 Torr，且在實施例中，可為至少或約2 Torr，至少或約3 Torr，至少或約4 Torr，至少或約5 Torr，至少或約6 Torr，至少或約7 Torr，至少或約8 Torr，或更多。在實施例中，壓力增加可小於或約10 Torr，或可在該等範圍的任一個內或在該等範圍的任一個之間的較小範圍。
還可用其他處理條件的任一個來調節一種或多種前驅物的流速。例如，在移除操作期間，可減少、維持，或增加含氟前驅物的流速。在方法300的操作的任一個期​​間，含氟前驅物的流速可在約2 sccm和約100 sccm之間。另外，含氟前驅物的流速可為至少或約5 sccm，至少或約10 sccm，至少或約15 sccm，至少或約20 sccm，至少或約25 sccm，至少或約30 sccm，至少或約40 sccm，至少或約50 sccm，至少或約60 sccm，至少或約80 sccm，至少或約100 sccm，至少或約120 sccm，至少或約150 sccm，或更多。流速也可在該等所述流速的任一個之間，或在該等數字的任一個所涵蓋的較小範圍內。
取決於所使用的前驅物，含氫前驅物可以該等流速的任一個流動，前驅物可為任何數量的含氫前驅物。例如，若使用醇，則醇可以至少或約0.5 g/min的速率引入。醇也可以至少或約1 g/min，至少或約2 g/min，至少或約3 g/min，至少或約4 g/min，至少或約5 g/min，至少或約6 g/min，至少或約7 g/min，至少或約8 g/min，至少或約9 g/min，或更高的速率引入，儘管可以低於約10 g/min引入醇，以減少部件和基板上的冷凝。醇也可以在該等所述的流速的任一個之間，或在該等數字的任一個所涵蓋的較小範圍內的流速引入。
在方法300完成時，在實施例中，基板中的氟濃度可低於或約為8％，且可低於或約7％，低於或約6％，低於或約5％，低於或約4％，低於或約3％，低於或約2％，低於或約1％，或更低。類似地，在實施例中，基板中的氧濃度可低於或約為15％，且可低於或約12％，低於或約10％，低於或約9％，低於或約8％，低於或約7％，低於或約6％，低於或約5％，低於或約4％，低於或約3％，低於或約2％，低於或約1％，或更低。
轉到第 5 圖 顯示了根據本技術的實施例的方法500中的示例性操作。方法500可包括先前描述的方法300的操作，條件，前驅物，參數或結果的一些或全部，或包括關於第4圖所討論的條件的任一個的一些或全部。方法500可為用於執行包括關於第4圖描述的彼等移除的額外方法。在一些實施例中，方法500與方法300的不同之處可在於方法500可不使用電漿流出物。例如，方法500可使含氟或其他含鹵素前驅物流到基板而不將前驅物曝露於電漿。在操作510處，含鹵素前驅物可流入腔室的處理區域中。基板可容納在處理區域內，且基板的特徵可在於具有曝露氧化物的區域及曝露金屬或含金屬材料的區域的高深寬比特徵。
在操作615處，含氫前驅物可流入處理區域中。含氫前驅物和含氟前驅物可共流入處理區域中，且可流過處理腔室的不同或類似部分。例如，兩種前驅物可流過腔室的入口，或含氟前驅物可流過第一通道進入腔室，且含氫前驅物可流過第二通道進入腔室。在操作520處，可移除曝露氧化物的至少一部分，而仍在基板上保持金屬​​或含金屬材料，或可藉由對該等材料進行最小程度的蝕刻而移除曝露氧化物的至少一部分。前驅物可為先前提到的前驅物的任一個，且在實施例中，含氟前驅物可為或包括氟化氫，且含氫前驅物可為或包括醇。方法500可在不使用水作為前驅物的情況下進行，並可不包括向處理腔室提供水，儘管在一些實施例中水可為反應副產物。
例如，基於如前所述的腔室條件，可將醇輸送到處理腔室，且可在基板的曝露表面上冷凝。該等表面可包括待移除的含氧材料（諸如氧化物），並可包括一種或多種待保持或最小地減少的材料(諸如金屬或含金屬的材料，矽或含矽材料，氮化物，或其他曝露的材料)。當氟化氫與冷凝醇相互作用時，氟化氫可解離以產生（例如）可改變和蝕刻氧化矽的蝕刻劑。
與其他材料相比，本技術可選擇性地蝕刻氧化矽，並可相對於其他類型的氧化矽選擇性地蝕刻某些類型的氧化矽。例如，本技術可相對於熱氧化物以至少約10：1的速率來蝕刻沉積的氧化矽，且可相對於熱氧化物以至少約15：1，至少約20：1，至少約50：1，至少約100：1，或更高的速率來蝕刻沉積的氧化物。沉積的氧化物可包括旋塗介電質，或沉積技術包括CVD、PECVD和其他沉積技術。本技術還可相對於氮化矽以至少約20：1，至少約25：1，至少約30：1，至少約50：1，至少約100：1，至少約150：1，或更高的速率來蝕刻氧化矽。本技術還可相對於氮化鈦以至少約50：1，至少約75：1，至少約100：1，至少約150：1，至少約200：1，至少約300：1，或更高的速率來蝕刻氧化矽。本技術還可相對於先前提到的金屬和含金屬材料的任一個以至少約20：1，至少約25：1，至少約30：1，至少約50：1，至少約100：1，至少約150：1，至少約200：1，至少約250：1，至少約300：1，至少約350：1，至少約400：1 ，至少約450：1，至少約500：1，或更高的速率來蝕刻氧化矽。
先前討論的方法可允許從基板移除氧化物材料同時限制氟摻入，同時保持基板特徵的關鍵尺寸，基板特徵可為高深寬比特徵，並同時保持其他材料（包括金屬和含金屬材料及其他含矽材料）。所執行的操作可包括在移除期間增加含氟前驅物流速，或如所討論的那樣持續一段時間的移除的一種或多種。如在整個本揭露書中所討論的，還可調整額外的腔室操作。藉由利用本方法和操作，可清潔或蝕刻高深寬比特徵，同時不導致圖案坍塌（與濕式蝕刻不同），且同時不增加或同時限制諸如氟的雜質內含物（與一些傳統的乾式蝕刻不同）。
在前面的描述中，出於解釋的目的，已經闡述了許多細節以便提供對本技術的各種實施例的理解。然而，對於熟悉本領域者將顯而易見的是，某些實施例可在沒有該等細節的一些或者具有額外細節的情況下實施。
已經揭露了若干實施例，熟悉本領域者將認識到在不背離實施例的精神的情況下，可使用各種修改、替代構造和等效元件。另外，尚未描述許多已知的處理和元件，以避免不必要地模糊本技術。因此，以上的描述不應被視為限制本技術的範圍。另外，方法或處理可被描述為順序的或依步驟的，但是應該理解操作可同時地執行，或者以與列出的順序不同的順序執行。
在提供值的範圍的情況下，應當理解除非上下文另有明確指出，否則還具體地揭露了在該範圍的上限和下限之間的每個中間值，至下限單位的最小部分。涵蓋了在所述範圍中的任何所述值或非所述的中間值與所述範圍中的任何其他所述或中間值之間的任何較窄範圍。彼等較小範圍的上限和下限可獨立地包括在該範圍內或排除在該範圍內，且本技術內也涵蓋了包括在較小範圍中的上下限的任一個或兩個，不包括在較小範圍中的上下限兩個的每個範圍，受制於在所述範圍中任何特別排除的限制。若所述範圍包括上下限的一個或兩個，則還包括排除該等所包括的限制的任一個或兩個的範圍。
如於此和所附隨的申請專利範圍中所使用的，單數形式「一（a）」，「一（an）」和「該（the）」包括複數指代，除非上下文另有明確說明。因此，例如，提及「一前驅物」包括複數個此類前驅物，且提及「該層」包括提及一個或多個層及熟悉本領域者已知的其等效元件等等。
此外，當在本說明書和以下的申請專利範圍中使用時，詞語「包含（comprise(s)）」，「包含（comprising）」，「含有（contain(s)）」，「含有（containing）」，「包括（include(s)）」和「包括（including）」旨在指定所述的特徵，整數，部件或操作的存在，但它們不排除一個或多個其他特徵，整數，部件，操作，動作或群組的存在或增加。
100‧‧‧系統
102‧‧‧前開式晶圓傳送盒
104‧‧‧機械手臂
106‧‧‧保持區域
108a-f‧‧‧腔室
109a-c‧‧‧串聯區段
110‧‧‧機械手臂
200‧‧‧系統
205‧‧‧腔室
210‧‧‧遠端電漿單元/RPS單元
211‧‧‧第一端
212‧‧‧第二端
213‧‧‧通道
214‧‧‧溝槽
215‧‧‧遠端電漿單元適配器
220‧‧‧隔離器
221‧‧‧隔離器通道
223‧‧‧中央孔
224‧‧‧溝槽
225‧‧‧壓力板
226‧‧‧第一端
227‧‧‧第二端
228‧‧‧中央通道
229a‧‧‧第一部分
229b‧‧‧第二部分
230‧‧‧適配器
231‧‧‧第二通道/通道
232‧‧‧第一埠
233‧‧‧第三通道
234‧‧‧第二埠
235‧‧‧擴散器
236‧‧‧第一通道
237‧‧‧第二通道
238‧‧‧第三通道
239a‧‧‧第一溝槽
239b‧‧‧第二溝槽
239c‧‧‧第三溝槽
240‧‧‧混合歧管
241‧‧‧第一端
242‧‧‧第二端
243‧‧‧入口
244‧‧‧通道
245‧‧‧錐形部分
246‧‧‧喇叭形部分
247‧‧‧出口
248‧‧‧加熱器
250‧‧‧氣體箱
252‧‧‧入口
253‧‧‧第一表面/頂表面
254‧‧‧中央通道
255‧‧‧第二表面
257‧‧‧容積
258‧‧‧容積
260‧‧‧阻擋板
263‧‧‧孔
265‧‧‧升高環形部分
266‧‧‧降低環形部分
270‧‧‧面板
272‧‧‧第一表面
273‧‧‧凸緣
274‧‧‧第二表面
275‧‧‧容積
280‧‧‧離子抑制元件
290‧‧‧蓋間隔件
300‧‧‧方法/處理
305‧‧‧操作
310‧‧‧操作
315‧‧‧操作
320‧‧‧操作
325‧‧‧操作
405‧‧‧基板
410‧‧‧矽化物材料
415‧‧‧襯裡材料
420‧‧‧金屬材料
425‧‧‧溝槽
430‧‧‧氮化物材料
435‧‧‧氧化物材料
500‧‧‧方法
510‧‧‧操作
515‧‧‧操作
520‧‧‧操作
藉由參考說明書的剩餘部分和圖式，可實現對所揭露技術的本質和優點的進一步理解。
第1圖顯示了根據本技術的實施例的示例性處理系統的一個實施例的頂部平面圖。
第2圖是示例性處理系統的示意性橫截面圖
第3圖顯示了根據本技術的實施例的方法中的示例性操作。
第4A-4B圖顯示了根據本技術的實施例而處理的基板的橫截面圖。
第5圖顯示了根據本技術的實施例的方法中的示例性操作。
包括若干圖式作為示意圖。應理解圖式僅用於說明目的，且除非特別說明依比例，否則不應視為依比例。另外，作為示意圖，提供圖式以幫助理解，且可能不包括與實際表示相比的所有態樣或資訊，且可能包括用於說明目的的附加或誇大的材料。
在附隨的圖式中，類似的部件及/或特徵可具有相同的元件符號。此外，可藉由在元件符號之後用區分類似部件的字母來區分相同類型的各種部件。若在說明書中僅使用第一元件符號，則該描述適用於具有相同第一元件符號的任何一個類似部件，而與字母無關。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無

Claims (20)

  1. 一種蝕刻方法，包含以下步驟： 使一含氟前驅物流入一半導體處理腔室的一遠端電漿區域中；在該遠端電漿區域內形成一電漿，以產生該含氟前驅物的多個電漿流出物；使該等電漿流出物流入該半導體處理腔室的一處理區域中，其中該處理區域容納一基板，該基板包含一曝露氧化物的區域和一曝露金屬的區域；向該處理區域提供一含氫前驅物；及移除該曝露氧化物的至少一部分。
  2. 如請求項1所述之蝕刻方法，進一步包含以下步驟：在該曝露氧化物的區域上冷凝該含氫前驅物。
  3. 如請求項1所述之蝕刻方法，其中該含氫前驅物包含一醇。
  4. 如請求項3所述之蝕刻方法，其中該醇選自由以下所組成的群組：甲醇、乙醇、丙醇、丁醇和戊醇。
  5. 如請求項1所述之蝕刻方法，進一步包含以下步驟：增加該處理腔室內的一壓力，同時移除該曝露氧化物的至少一部分。
  6. 如請求項5所述之蝕刻方法，其中該壓力增加至少約1Torr。
  7. 如請求項1所述之蝕刻方法，其中該含氟前驅物包含三氟化氮。
  8. 如請求項1所述之蝕刻方法，進一步包含以下步驟：降低該處理腔室內的一溫度，同時移除該曝露氧化物的至少一部分。
  9. 如請求項8所述之蝕刻方法，其中該溫度降低至少約5℃。
  10. 如請求項1所述之蝕刻方法，其中該金屬選自由以下所組成的群組：鎢、鈷、銅、氮化鈦、氮化鉭和矽化鈷。
  11. 如請求項1所述之蝕刻方法，其中該方法在不向該處理腔室提供水的情況下執行。
  12. 如請求項1所述之蝕刻方法，其中當提供給該處理區域時，該含氫前驅物繞過該遠端電漿區域。
  13. 如請求項1所述之蝕刻方法，其中在該等移除操作期間該處理區域保持無電漿。
  14. 一種移除方法，包含以下步驟： 使一含氟前驅物流入一半導體處理腔室的一處理區域中，其中該處理區域容納包含一高深寬比特徵的一基板，該基板具有一曝露氧化物的區域和一曝露含金屬材料的區域；在使該含氟前驅物流入該處理區域中的同時，向該處理區域提供一含氫前驅物以產生一蝕刻劑；及用該蝕刻劑移除該曝露氧化物的至少一部分。
  15. 如請求項14所述之移除方法，其中該蝕刻劑在沒有一潛伏期的情況下開始與氧化物反應。
  16. 如請求項14所述之移除方法，其中該含氫前驅物包含一醇。
  17. 如請求項14所述之移除方法，其中該含氟前驅物包含氟化氫。
  18. 如請求項14所述之移除方法，其中該方法在低於或約10℃的一處理溫度下進行。
  19. 如請求項14所述之移除方法，其中該方法在低於或約50 Torr的一處理壓力下進行。
  20. 如請求項14所述之移除方法，其中該金屬選自由以下所組成的群組：鈷、鎢和銅。
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