JP5480880B2 - リソグラフィ投影装置 - Google Patents
リソグラフィ投影装置 Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
Description
− 放射線の投影ビームを供給する放射線システムと、
− 所望するパターンに従って投影ビームをパターン化するパターニング手段を支持する支持構造と、
− 基板を保持する基板テーブルと、
− パターン化されたビームを基板の目標部分に投影する投影システムと、
− 該投影システムの最終素子と該基板間のスペースを少なくとも部分的に液体で満たす液体供給システムとから成るリソグラフィ投影装置に関する。
− マスク。マスクの概念はリソグラフィにおいて周知のものであり、これには、様々なハイブリッドマスクタイプのみならず、バイナリマスク、レベンソンマスク、減衰位相シフトマスクといったようなマスクタイプも含まれる。放射線ビームにこのようなマスクを配置することにより、マスクに照射する放射線の、マスクパターンに従う選択的透過(透過性マスクの場合)や選択的反射(反射性マスクの場合)を可能にする。マスクの場合、その支持構造は一般的に、入射する放射線ビームの所望する位置にマスクを保持しておくことが可能であり、かつ、必要な場合、ビームに対して運動させることの可能なマスクテーブルである。
− プログラマブルミラーアレイ。このようなデバイスの一例として、粘弾性制御層および反射面を有するマトリクスアドレス可能面があげられる。こうした装置の基本的原理は、(例えば)反射面のアドレスされた領域は入射光を回折光として反射するが、アドレスされていない領域は入射光を非回折光として反射するといったことである。適切なフィルタを使用することにより、回折光のみを残して上記非回折光を反射ビームからフィルタすることが可能である。この方法において、ビームはマトリクスアドレス可能面のアドレスパターンに従ってパターン形成される。プログラマブルミラーアレイのまた別の実施形態では小さな複数のミラーのマトリクス配列を用いる。そのミラーの各々は、適した局部電界を適用することによって、もしくは圧電作動手段を用いることによって、軸を中心に個々に傾けられている。もう一度言うと、ミラーはマトリクスアドレス可能であり、それによりアドレスされたミラーはアドレスされていないミラーとは異なる方向に入射の放射線ビームを反射する。このようにして、反射されたビームはマトリクスアドレス可能ミラーのアドレスパターンに従いパターン形成される。必要とされるマトリクスアドレッシングは適切な電子手段を用いて実行される。前述の両方の状況において、パターニング手段は1つ以上のプログラマブルミラーアレイから構成可能である。ここに参照を行ったミラーアレイに関するより多くの情報は、例えば、米国特許第US5,296,891号および同第US5,523,193号、並びに、PCT特許種出願第WO98/38597および同WO98/33096に開示されているので詳細は、これらの内容を参照されたい。プログラマブルミラーアレイの場合、上記支持構造は、例えばフレームもしくはテーブルとして具体化され、これは必要に応じて、固定式となるか、もしくは可動式となる。
− プログラマブルLCDアレイ。このような構成の例が米国特許第US5,229,872号に開示されているので詳細は、この内容を参照されたい。上記同様、この場合における支持構造も、例えばフレームもしくはテーブルとして具体化され、これも必要に応じて、固定式となるか、もしくは可動式となる。簡潔化の目的で、本文の残りを、特定の箇所において、マスクおよびマスクテーブルを必要とする例に限定して説明することとする。しかし、こうした例において論じられる一般的な原理は、既に述べたようなパターニング手段のより広範な状況において理解されるべきである。
− 上記投影システムの最終素子と上記基板テーブル間の上記スペースの少なくとも境界の部分に沿って伸長したシール部材と、
− 該シール部材と該基板の表面間においてガスシールを形成するガスシール手段とから構成される。
− 放射線感光材料の層により少なくとも部分的に覆われた基板を提供するステップと、
− 放射線システムを用いて放射線の投影ビームを供給するステップと、
− パターニング手段を用いて投影ビームのその断面にパターンを与えるステップと、
− 放射線感光材料の層の目標部分に放射線のパターン化されたビームを投影するステップと、
− 基板と、上記投影ステップにおいて使用される投影システムの最終素子間のスペースを満たすように液体を供給するステップとからなるデバイス製造方法が提供され、
− 該スペースの少なくとも境界の部分に沿って伸長したシール部材と該基板の表面間においてガスシールを形成するか、あるいは、
− ダクトを通して該スペースと液体にて連結する液体リザーバを提供するかのいずれかであって、
− 該ダクトは、
− 抑制手段によって該液体の波の発生を抑制し、かつ、該液体の圧力を解除させることを特徴とする。
図1は、本発明の独自の実施形態に基づくリソグラフィ投影装置を示したものである。この装置は、特別な本実施形態において放射線源LAも備えた、放射線の投影ビームPB(例えばDUV放射線)を供給する放射線システムEx、ILと、マスクMA(例えばレクチル)を保持するマスクホルダーw備え、かつ、品目PLに対して正確にマスクの位置決めを行う第一位置決め手段に連結を行った第一オブジェクト・テーブル(マスクテーブル)MTと、基板W(例えば、レジスト塗布シリコンウェハ)を保持する基板ホルダを備え、かつ、品目PLに対して正確に基板の位置決めを行う第二位置決め手段に連結を行った第二オブジェクト・テーブル(基板テーブル)WTと、マスクMAの照射部分を、基板Wの目標部分C(例えば、1つあるいはそれ以上のダイから成る)に像形成する投影システム(「レンズ」)PL(例えば反射屈折レンズシステム)とにより構成されている。ここで示しているように、この装置は透過タイプ(すなわち透過マスクを有する)である。しかし、一般的には、例えば反射マスクを有する反射タイプのものも可能である。あるいは、本装置は、上記に関連するタイプであるプログラマブルミラーアレイといったような、他の種類のパターニング手段も使用可能である。
− ステップモードにおいて、マスクテーブルMTは基本的に静止状態に保たれている。そして、マスクの像全体が1回の作動(すなわち1回の「フラッシュ」)で目標部分Cに投影される。次に基板テーブルWTがx方向および/あるいはy方向にシフトされ、異なる目標部分CがビームPBにより照射され得る。
− スキャンモードにおいて、基本的に同一シナリオが適用されるが、但し、ここでは、所定の目標部分Cは1回の「フラッシュ」では露光されない。代わって、マスクテーブルMTが、速度vにて所定方向(いわゆる「走査方向」、例えばy方向)に運動可能であり、それによってビームPBがマスクの像を走査する。これと同時に、基板テーブルWTが速度V=Mvで、同一方向あるいは反対方向に運動する。ここで、MはレンズPLの倍率(一般的にM=1/4あるいは1/5)である。このように、解像度を妥協することなく、比較的大きな目標部分Cを露光することが可能となる。
図4および図5において第2実施例を示している。第2実施例は以下に記載の内容を除いて第1実施例と同様である。
図6に示すように、第2実施例の代替案、あるいはさらなる展開として、第一ガス導出口14の内側(投影システムの光軸にさらに近い)に、基板Wに面したシール部材12の面にチャネル320が設けられる。チャネル320はガス導入口および導出口の14、15、216と同様の構成を有する。
図7および図8に示した第4実施例は、以下に記載の内容を除いては第1実施例と同様である。しかし、第4実施例はここに記載のいずれか他の実施例とともに有効に使用することも可能である。
上記の実施例全てにおいて一般的に、自由表面を有する、空気といったガスに露出されるリザーバ10内に液体を有する。これは、投影システムPLの最終素子が、投影システムに静水力が増すことによるクラッシュの場合に破壊するのを防ぐためでる。クラッシュの間、投影システムPLがそれに対して作用するとき、リザーバ10内の液体は抑制させず、液体が容易に上方にあがることを余儀なくされる。この解決法の欠点は、稼動中に自由表面で表面波が生じ、それにより基板Wから投影システムPLに好ましからざる外乱を伝えることである。
図10および図11に示した第6実施例は、以下に記載の内容を除いて第1実施例と同様である。第6実施例は上述の実施例における提案のいくつかを使用する。
第7実施例は以下に記載の内容を除いて第6実施例に類似する。図12は、図11と類似するシール部材12下側の平面図である。図12において、シール部材12には第6実施例に示したようなさらなる導入口は設けられないが、任意に追加することも可能である。
第8実施例は図14との関連において説明を行うものであり、以下に記載の内容を除いて第一実施例と同様である。
第9実施例を図15および図16に示しており、これは以下に記載の内容を除いて第一実施例と同様である。
第10実施例を図17に示しており、本実施例は以下に記載の内容を除いて第1実施例と同様である。
Claims (7)
- 基板を保持するテーブルと、
パターン化されたビームを前記基板の目標部分に投影する投影システムと、
前記投影システムの最終素子と前記基板及び/又は前記テーブルとの間のスペースを少なくとも部分的に液体で満たす液体供給システムとを有し、
前記液体供給システムは、
前記スペースの少なくとも一部に沿って伸長したシール部材と、
前記シール部材と前記基板及び/又は前記テーブルの表面との間においてガスシールを形成するガスシール手段と
を有し、
前記シール部材は、前記基板及び/又は前記テーブルに面した前記シール部材の面の一部の前記基板及び/又は前記テーブルに対する距離を変える調整手段を含む、
リソグラフィ投影装置。 - 前記ガスシール手段は、前記基板及び/又は前記テーブルに対向した前記シール部材の面に形成されたガス導入口および第一ガス導出口と、前記ガス導入口に加圧下にてガスを供給する手段と、前記第一ガス導出口からガスを抽出する真空手段とを含む請求項1に記載のリソグラフィ投影装置。
- 前記ガスシール手段は、前記基板及び/又は前記テーブルに対向した前記シール部材の前記面に形成された第二ガス導出口をさらに備え、前記第一ガス導出口および前記第二ガス導出口は前記ガス導入口の両側に形成される請求項2に記載のリソグラフィ投影装置。
- 前記調整手段は、前記面の残り部分に対して、前記第一ガス導出口と前記ガス導入口間における前記面の部分のレベルを変える請求項2又は3に記載のリソグラフィ投影装置。
- 前記調整手段は、前記面の残り部分に対して、前記第一ガス導出口と光軸に最も近い面のエッジとの間における前記面の部分のレベルを変える請求項2から4のいずれか1項に記載のリソグラフィ投影装置。
- 前記ガス導入口は、前記投影システムの光軸から、前記第一ガス導出口よりもさらに外側に配置されている請求項2から5のいずれか1項に記載のリソグラフィ投影装置。
- 前記シール部材の前記面と、前記基板及び/又は前記基板のトポロジーとの間の距離を測定するセンサーをさらに備える請求項1から6のいずれか1項に記載のリソグラフィ投影装置。
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EP02257822 | 2002-11-12 | ||
EP02257822.3 | 2002-11-12 | ||
EP03252955 | 2003-05-13 | ||
EP03252955.4 | 2003-05-13 |
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JP5480880B2 true JP5480880B2 (ja) | 2014-04-23 |
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JP2003417259A Expired - Fee Related JP3977324B2 (ja) | 2002-11-12 | 2003-11-11 | リソグラフィ装置 |
JP2007038065A Expired - Fee Related JP4567013B2 (ja) | 2002-11-12 | 2007-02-19 | リソグラフィ投影装置 |
JP2010059726A Expired - Fee Related JP5017403B2 (ja) | 2002-11-12 | 2010-03-16 | リソグラフィ投影装置 |
JP2011281445A Expired - Fee Related JP5480880B2 (ja) | 2002-11-12 | 2011-12-22 | リソグラフィ投影装置 |
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JP2007038065A Expired - Fee Related JP4567013B2 (ja) | 2002-11-12 | 2007-02-19 | リソグラフィ投影装置 |
JP2010059726A Expired - Fee Related JP5017403B2 (ja) | 2002-11-12 | 2010-03-16 | リソグラフィ投影装置 |
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US (8) | US6952253B2 (ja) |
JP (4) | JP3977324B2 (ja) |
KR (1) | KR100585476B1 (ja) |
CN (1) | CN100470367C (ja) |
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CN100568101C (zh) | 2002-11-12 | 2009-12-09 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
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US7372541B2 (en) | 2002-11-12 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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SG150388A1 (en) * | 2002-12-10 | 2009-03-30 | Nikon Corp | Exposure apparatus and method for producing device |
SG171468A1 (en) * | 2002-12-10 | 2011-06-29 | Nikon Corp | Exposure apparatus and method for producing device |
US7948604B2 (en) * | 2002-12-10 | 2011-05-24 | Nikon Corporation | Exposure apparatus and method for producing device |
US7242455B2 (en) * | 2002-12-10 | 2007-07-10 | Nikon Corporation | Exposure apparatus and method for producing device |
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US20090002652A1 (en) | 2009-01-01 |
KR100585476B1 (ko) | 2006-06-07 |
JP2007142460A (ja) | 2007-06-07 |
JP3977324B2 (ja) | 2007-09-19 |
JP2004289126A (ja) | 2004-10-14 |
US9091940B2 (en) | 2015-07-28 |
US20060023189A1 (en) | 2006-02-02 |
JP5017403B2 (ja) | 2012-09-05 |
TW200426521A (en) | 2004-12-01 |
US8208120B2 (en) | 2012-06-26 |
CN100470367C (zh) | 2009-03-18 |
US7388648B2 (en) | 2008-06-17 |
US10222706B2 (en) | 2019-03-05 |
US20080218726A1 (en) | 2008-09-11 |
CN1501173A (zh) | 2004-06-02 |
US20110228241A1 (en) | 2011-09-22 |
JP2010135857A (ja) | 2010-06-17 |
JP4567013B2 (ja) | 2010-10-20 |
SG2010050110A (en) | 2014-06-27 |
US8797503B2 (en) | 2014-08-05 |
US20040207824A1 (en) | 2004-10-21 |
US20150362844A1 (en) | 2015-12-17 |
KR20040044119A (ko) | 2004-05-27 |
US6952253B2 (en) | 2005-10-04 |
US10620545B2 (en) | 2020-04-14 |
US20190265596A1 (en) | 2019-08-29 |
SG121818A1 (en) | 2006-05-26 |
JP2012064979A (ja) | 2012-03-29 |
SG135052A1 (en) | 2007-09-28 |
TWI232357B (en) | 2005-05-11 |
US20130301017A1 (en) | 2013-11-14 |
US7982850B2 (en) | 2011-07-19 |
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