JPS6265326A - 露光装置 - Google Patents
露光装置Info
- Publication number
- JPS6265326A JPS6265326A JP60204214A JP20421485A JPS6265326A JP S6265326 A JPS6265326 A JP S6265326A JP 60204214 A JP60204214 A JP 60204214A JP 20421485 A JP20421485 A JP 20421485A JP S6265326 A JPS6265326 A JP S6265326A
- Authority
- JP
- Japan
- Prior art keywords
- exposure
- lens
- wafer
- exposure apparatus
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【発明の詳細な説明】
〔技術分野〕
本発明は露光装置に関するものである。
近年、超LSIJPLSIKおけるデバイスの微細化が
進展するにつれて、N光装置でも解像度を一層上げる必
要があり、又寸法制御性の向上を一層図る必要がある。
進展するにつれて、N光装置でも解像度を一層上げる必
要があり、又寸法制御性の向上を一層図る必要がある。
そしてLSIにおける歩留の向上を図る必要がある。
露光装置の解像度Rは、露光波長なλ、元学系の開口数
N、 A、とすると、 の関係があり、また光学系の開口数N、 A、は対物レ
ンズの物点側媒質の屈折率をn、開口半角をθとすると
、 N、A、 −n sin θ
・・・・・・(2)の関
係がある。
N、 A、とすると、 の関係があり、また光学系の開口数N、 A、は対物レ
ンズの物点側媒質の屈折率をn、開口半角をθとすると
、 N、A、 −n sin θ
・・・・・・(2)の関
係がある。
従って、解像度Rを上げるには、(イ)λを小さくする
か、仲I N、 A、を大にする、即ちθを大にするか
、nを大に丁ればよい。
か、仲I N、 A、を大にする、即ちθを大にするか
、nを大に丁ればよい。
そこで、nを大にして、N、 A、を大にし、解像度R
を上げることが考えられる。
を上げることが考えられる。
一方、レジストに着目して解像度や寸法制御性の向上を
図ることが考えられる。
図ることが考えられる。
即ち、通常の露光装置内のウェハは室温と同温度に維持
されている。しかし、この温度でも、Agt S e
/G e X S e 1−x系レジスト(ネガ形レジ
スト)および通常使用されているポジ形レジスト系内で
は感光基のレジスト内での拡散が知られており、前者の
レジストについてはコントラストエンハンスメント(c
ontrast enhancement )効果が、
後者のレジストについては定在波効果の低減という効果
が、夫々知られている。なおAgtSe/Ge)(Se
、、系でAgの拡散によりコントラストエンハンスメン
トを行なうことについてはR,G、 Vodinsky
and L、 T。
されている。しかし、この温度でも、Agt S e
/G e X S e 1−x系レジスト(ネガ形レジ
スト)および通常使用されているポジ形レジスト系内で
は感光基のレジスト内での拡散が知られており、前者の
レジストについてはコントラストエンハンスメント(c
ontrast enhancement )効果が、
後者のレジストについては定在波効果の低減という効果
が、夫々知られている。なおAgtSe/Ge)(Se
、、系でAgの拡散によりコントラストエンハンスメン
トを行なうことについてはR,G、 Vodinsky
and L、 T。
Kemever 、Ge−8e based resi
st system forsubmicron VL
SI Application、 ”5PIE vol
39C(1983)に記載されている。
st system forsubmicron VL
SI Application、 ”5PIE vol
39C(1983)に記載されている。
先ず、前者のAg2Se/GexSe、−x系しジスト
ニついていえば、第2図(atで示すようにマスクl(
マスク基板2にパターン3を形成してなるもの)[j1
照明系からの光が照射されると、ウェハ4表面のAg
、 Se/ GexSe 、−x系レジスト5(ネガ形
レジスト)では、室温において露光され1こ部分5a(
斜線で示す部分)へ矢印で示すように周囲から感光基の
拡散が起り、現像液に不溶化する。
ニついていえば、第2図(atで示すようにマスクl(
マスク基板2にパターン3を形成してなるもの)[j1
照明系からの光が照射されると、ウェハ4表面のAg
、 Se/ GexSe 、−x系レジスト5(ネガ形
レジスト)では、室温において露光され1こ部分5a(
斜線で示す部分)へ矢印で示すように周囲から感光基の
拡散が起り、現像液に不溶化する。
この場合のレジスト位11txに対する光強度は通常同
図(blに示す如くなり、これに対したレジストの反応
度は同図(c)のイの如く立上った特性がみられる。こ
の特性では立上り文下り部分の段差がそれほど高くなく
解像度が十分でないことが判る。そこで解像度を向上さ
せるには露光部分5aへの感光基の拡散の度合を大にし
てやればよい。この対策をどう丁べきかが問題となって
いる。
図(blに示す如くなり、これに対したレジストの反応
度は同図(c)のイの如く立上った特性がみられる。こ
の特性では立上り文下り部分の段差がそれほど高くなく
解像度が十分でないことが判る。そこで解像度を向上さ
せるには露光部分5aへの感光基の拡散の度合を大にし
てやればよい。この対策をどう丁べきかが問題となって
いる。
また後者のポジ形レジスト系では第3図の如くウェハ4
表面のポジ形レジスト6が定在波効果により境界部分で
波形に露光され、7で示す部分では元が吸収されレジス
トが分解されている。しかし室温においても前述しfこ
ように感光基の拡散が起り、この定在波効果が低減され
た状態となっているが、寸法制御性の点で不十分である
。そこで寸法制御性の向上を図るには、定在波効果のよ
り一層の低減を図ることが必要であり、その対策をどう
丁べきかが問題となっている。
表面のポジ形レジスト6が定在波効果により境界部分で
波形に露光され、7で示す部分では元が吸収されレジス
トが分解されている。しかし室温においても前述しfこ
ように感光基の拡散が起り、この定在波効果が低減され
た状態となっているが、寸法制御性の点で不十分である
。そこで寸法制御性の向上を図るには、定在波効果のよ
り一層の低減を図ることが必要であり、その対策をどう
丁べきかが問題となっている。
このように、レジストについては、解像度の向上や寸法
制御性の向上対策が問題となっている。
制御性の向上対策が問題となっている。
以上から、露光装置の解像度Rの向上、レジストに着目
した場合の解像度及び寸法制御性の向上を図ることは、
ま丁ま丁微細化してい<LSIの歩留の向上を図ろうえ
できわめて重要な課題となっている。
した場合の解像度及び寸法制御性の向上を図ることは、
ま丁ま丁微細化してい<LSIの歩留の向上を図ろうえ
できわめて重要な課題となっている。
本発明の目的は、解像度や寸法制御性の向上を図り、も
って被処理部材の歩留の向上を図るようにした露光装置
を提供することにある。
って被処理部材の歩留の向上を図るようにした露光装置
を提供することにある。
本発明の前記ならびにそのはかの目的と新規な特徴は、
本明細書の記述および添付図面からあきらかになるであ
ろう。
本明細書の記述および添付図面からあきらかになるであ
ろう。
本願において開示されろ発明のうち代表的なもののW1
要を簡単に説明丁れば、下記のとおりである。
要を簡単に説明丁れば、下記のとおりである。
丁なわち、縮小投影露光装置において、縮小レンズ系の
レンズとウェハ面との間に、レンズの屈折率よりやや小
さい屈折率の液体たとえば水を介在させて露光を行なう
ことにより高い解像度を得るようにし、もって被処理部
材であるウエノ・の歩留の向上を図るようにし1こもの
である。
レンズとウェハ面との間に、レンズの屈折率よりやや小
さい屈折率の液体たとえば水を介在させて露光を行なう
ことにより高い解像度を得るようにし、もって被処理部
材であるウエノ・の歩留の向上を図るようにし1こもの
である。
また露光装置において、パターン露光されるウェハが配
置される載置台に、ウェハを所定温度に加熱設定するk
めの加熱装置を内蔵させ、露光しながらつ1パ表面に形
成したレジスト内の感光基の拡散を十分に図るようにし
、レジストについての解償度の向上や寸法制御性の向上
を図り、もって被処理部材であるウェハの歩留の向上を
図るようにしたものである。
置される載置台に、ウェハを所定温度に加熱設定するk
めの加熱装置を内蔵させ、露光しながらつ1パ表面に形
成したレジスト内の感光基の拡散を十分に図るようにし
、レジストについての解償度の向上や寸法制御性の向上
を図り、もって被処理部材であるウェハの歩留の向上を
図るようにしたものである。
〔実施例1〕
第1図は本発明によるI!元装置の一実施例を示し、特
に縮小投影露光装置の場合を示している。
に縮小投影露光装置の場合を示している。
ここでは被処理部材としてウエノ・に適用した場合を例
にとり、以下本発明を説明する。
にとり、以下本発明を説明する。
11は水銀ランプ、12は集光レンズであって、これら
の水銀ランプ11と集光レンズ12は露光照明系13を
構成する。水銀ランプ11かもの元は集光レンズ12を
介してマスクとしてのレチクル14に照射され縮小レン
ズ系15の一方のレンズ15aに入射される。16は筒
状の部材で内面側に反射防止膜が被着され【いる。縮小
レンズ系15の他方のレンズ15bとウェハ17i面と
の間には、レンズ15bの屈折率よりやや小さい屈折率
の液体、ここでは水18を介在させ【ある。
の水銀ランプ11と集光レンズ12は露光照明系13を
構成する。水銀ランプ11かもの元は集光レンズ12を
介してマスクとしてのレチクル14に照射され縮小レン
ズ系15の一方のレンズ15aに入射される。16は筒
状の部材で内面側に反射防止膜が被着され【いる。縮小
レンズ系15の他方のレンズ15bとウェハ17i面と
の間には、レンズ15bの屈折率よりやや小さい屈折率
の液体、ここでは水18を介在させ【ある。
従って縮小レンズ系15の他方のレンズ15bから射出
される光は、水18を介してウェハ17上に達する。そ
してウェハ17表面のレジストがパターン露光されるこ
とになる。ここでレンズ15bとウェハ17間に水18
を浸し2て露光するためには、レンズ15bとウェハ1
7間がきわめて接近し【いるので、ウェハ17表面全体
に予め水を浸してからステップアンドリピート方式でウ
ェハ17全体を露光してもよいし、またはウェハ17上
を順次スキャンして次々露光してい(箇所毎に、その都
度露光前にその露光しようとする部分(チップを4個ず
つ露光するなら、該当する4つのチップ分)のウェハ1
7上に水を盛りながら液浸露光を行なってもよい。19
はウェハ17が配置されるチャックプレート(ウェハチ
ャック)であって、このチャックプレート19は真空吸
着方式を用いて、ウェハ17を所定位置に吸着保持する
ものである。このチャックプレート19はXY移動ステ
ージ20に取付けられている。このXY移動ステージ2
0は水平方向(X−Y方向)に自由に移動することがで
きるように構成されており、XY移動ステージ20の移
動によりウェハ17を露光部べき所定位置に合せること
ができる。
される光は、水18を介してウェハ17上に達する。そ
してウェハ17表面のレジストがパターン露光されるこ
とになる。ここでレンズ15bとウェハ17間に水18
を浸し2て露光するためには、レンズ15bとウェハ1
7間がきわめて接近し【いるので、ウェハ17表面全体
に予め水を浸してからステップアンドリピート方式でウ
ェハ17全体を露光してもよいし、またはウェハ17上
を順次スキャンして次々露光してい(箇所毎に、その都
度露光前にその露光しようとする部分(チップを4個ず
つ露光するなら、該当する4つのチップ分)のウェハ1
7上に水を盛りながら液浸露光を行なってもよい。19
はウェハ17が配置されるチャックプレート(ウェハチ
ャック)であって、このチャックプレート19は真空吸
着方式を用いて、ウェハ17を所定位置に吸着保持する
ものである。このチャックプレート19はXY移動ステ
ージ20に取付けられている。このXY移動ステージ2
0は水平方向(X−Y方向)に自由に移動することがで
きるように構成されており、XY移動ステージ20の移
動によりウェハ17を露光部べき所定位置に合せること
ができる。
このように構成された露光装置においては、解18!度
を上げろために(2)式の屈折率nを大きくするように
している。媒質の屈折率nとしては液浸の原理よりレン
ズ15bの屈折率と略同等か、それよりやや小さ−・屈
折率であればよい。従って、レンズ15bの屈折率と略
同等か、あるいはそれよりもやや小さい屈折率の液体、
ここでは水18を用いている。水18(屈折率4/3)
は空気よりも屈折率が大きい。レンズ15bとウェハ1
7間に水18を介在させたことにより光学系、即ち縮小
レンズ系15の開口数N、 A、を大にすることができ
、(11式の解像度を著しく上げることができる。
を上げろために(2)式の屈折率nを大きくするように
している。媒質の屈折率nとしては液浸の原理よりレン
ズ15bの屈折率と略同等か、それよりやや小さ−・屈
折率であればよい。従って、レンズ15bの屈折率と略
同等か、あるいはそれよりもやや小さい屈折率の液体、
ここでは水18を用いている。水18(屈折率4/3)
は空気よりも屈折率が大きい。レンズ15bとウェハ1
7間に水18を介在させたことにより光学系、即ち縮小
レンズ系15の開口数N、 A、を大にすることができ
、(11式の解像度を著しく上げることができる。
そして被処理部材であるウェハ即ちLSIの歩留の向上
を図ることができる。
を図ることができる。
〔実施例2〕
本発明の第2実施例について第1図を用いて説明する。
第1図におけろ水18による液浸を用いずに、チャック
プレート19は、更にウェハ17従って表面のレジスト
を所定温度たとえば約100’Cに加熱設定するための
加熱装置を内蔵する構成とする。この所定温度はレジス
トの種類に合せて選択される。通常は100℃前後が選
択される。
プレート19は、更にウェハ17従って表面のレジスト
を所定温度たとえば約100’Cに加熱設定するための
加熱装置を内蔵する構成とする。この所定温度はレジス
トの種類に合せて選択される。通常は100℃前後が選
択される。
更にここでは図示していないが、加熱装置としては、ヒ
ータ(たとえば抵抗ヒータなと)や高温の液体を循環さ
せてなる装置などが用いられ、露光中所定温度が維持さ
れるように構成されている。
ータ(たとえば抵抗ヒータなと)や高温の液体を循環さ
せてなる装置などが用いられ、露光中所定温度が維持さ
れるように構成されている。
所定温度に保つべく一定制御される構成でもよい。
ウェハ17を室温よりも高い温度で、ここでは約100
℃で第1図装置により露光を行なう。
℃で第1図装置により露光を行なう。
先ず、レジストがAg* Se/ Ge )(Se 1
−x系レジストである場合においては、高温(約100
℃)で露光することにより、レジスト内の感光基の拡散
を一層促進させることができ、ウェハ17表面の露光部
分のレジストの反応度は第2図(c)で示す口の如(な
り、露光された部分と、露光されない部分との段差がき
わめて大となる。これはg元部弁5aでの感光基の拡散
が十分に行なわれたことを示している。このようにコン
トラストエンノ・ンスメント効果の増大により解像度を
一層上げることができ、ウェハ即ちLSIの歩留の向上
をより一層図ることができる。
−x系レジストである場合においては、高温(約100
℃)で露光することにより、レジスト内の感光基の拡散
を一層促進させることができ、ウェハ17表面の露光部
分のレジストの反応度は第2図(c)で示す口の如(な
り、露光された部分と、露光されない部分との段差がき
わめて大となる。これはg元部弁5aでの感光基の拡散
が十分に行なわれたことを示している。このようにコン
トラストエンノ・ンスメント効果の増大により解像度を
一層上げることができ、ウェハ即ちLSIの歩留の向上
をより一層図ることができる。
次にレジストとしてポジ形レジストを用いた場合につい
℃説明する。この場合には前述した如(定在波効果が顕
著に現われるので、本発明では高温(約100℃)で露
光を行なうことにより、この定在波効果を著しく低減さ
せるようにしている。即ち、高温でwt光を行なうと、
レジスト中で分解、未分解の感光基の拡散を著しく促進
させることができ、しかもこのような拡散をさせながら
露光を行なうことができるので、第3図の露光部分6a
では分解、未分解の感光基が混り合い、ぼかされたよう
な状態となる。
℃説明する。この場合には前述した如(定在波効果が顕
著に現われるので、本発明では高温(約100℃)で露
光を行なうことにより、この定在波効果を著しく低減さ
せるようにしている。即ち、高温でwt光を行なうと、
レジスト中で分解、未分解の感光基の拡散を著しく促進
させることができ、しかもこのような拡散をさせながら
露光を行なうことができるので、第3図の露光部分6a
では分解、未分解の感光基が混り合い、ぼかされたよう
な状態となる。
この結果レジスト6の露光された部分と露光されない部
分との境界部分では境界面が点線ノ・、二で示す如く直
線的となり定在波効果を著しく低減させることができる
。従ってレジストパターンひいてはデバイスパターンの
寸法制御性の向上が図られ、もりて被処理部材としての
ウェハ、即ちLSIの歩留の向上を図ろことができる。
分との境界部分では境界面が点線ノ・、二で示す如く直
線的となり定在波効果を著しく低減させることができる
。従ってレジストパターンひいてはデバイスパターンの
寸法制御性の向上が図られ、もりて被処理部材としての
ウェハ、即ちLSIの歩留の向上を図ろことができる。
(1)液浸の原理を用いて光学系の開口数N、 A、を
大きくすることにより高い解像度が得られ、被処理部材
(たとえばLSIウェハ)の歩留の向上を図ることがで
きる。
大きくすることにより高い解像度が得られ、被処理部材
(たとえばLSIウェハ)の歩留の向上を図ることがで
きる。
(2)高温処理を施す(高温で8元するか、露光後高温
処理を施す)ことによりレジスト内での感光基の拡散を
著しく促進させることができ、コントラストエンハンス
メント効果の増大を図ることができ、従って解像度を著
しく上げることができ、もって被処理部材(たとえばL
SIウェハ)の歩留の向上を図ることができる。
処理を施す)ことによりレジスト内での感光基の拡散を
著しく促進させることができ、コントラストエンハンス
メント効果の増大を図ることができ、従って解像度を著
しく上げることができ、もって被処理部材(たとえばL
SIウェハ)の歩留の向上を図ることができる。
(3)高温処理な施工(高温で露光するか、露光後高温
処理を施す)ことによりレジスト内での感光基の拡散を
著しく促進さヤろことができ、定在波効果を著しく低減
させることができ、従って寸法制御性の向上を著しく図
ることができ、もって被処理部材(たとえばLSIウェ
ハ)の歩留の向上を図ることができる。
処理を施す)ことによりレジスト内での感光基の拡散を
著しく促進さヤろことができ、定在波効果を著しく低減
させることができ、従って寸法制御性の向上を著しく図
ることができ、もって被処理部材(たとえばLSIウェ
ハ)の歩留の向上を図ることができる。
以上本発明者によりてなされた発明を実施例にもとづき
具体的に説明したが、本発明は上記実施例に限定される
ものではなく、その要旨を逸脱しない範囲で種々変更可
能であることはいうまでもない。たとえば、実施例1に
おいては、レンズ15bとウェハ17間に液体を介挿さ
せた場合であるが、レンズ15aとマスクとしてのレチ
クル14間に液体を介挿させてもよい。第1図では筒状
部材16内に液体を充填してやればよい。筒状部材16
の如きものが配設されていない露光装置では、筒状部材
16と同様の部材を適宜用いればよい。
具体的に説明したが、本発明は上記実施例に限定される
ものではなく、その要旨を逸脱しない範囲で種々変更可
能であることはいうまでもない。たとえば、実施例1に
おいては、レンズ15bとウェハ17間に液体を介挿さ
せた場合であるが、レンズ15aとマスクとしてのレチ
クル14間に液体を介挿させてもよい。第1図では筒状
部材16内に液体を充填してやればよい。筒状部材16
の如きものが配設されていない露光装置では、筒状部材
16と同様の部材を適宜用いればよい。
また実施例2では高温で露光しているが、露光後ウェハ
17全体をチャックプレート19に内蔵された加熱装置
により一挙に高温熱処理(所定温度で)をしてもよいし
、また露光装置とは別に設けた加熱装置により高温処理
をしてもよい。これらの場合も前述したと同様の作用効
果を奏する。
17全体をチャックプレート19に内蔵された加熱装置
により一挙に高温熱処理(所定温度で)をしてもよいし
、また露光装置とは別に設けた加熱装置により高温処理
をしてもよい。これらの場合も前述したと同様の作用効
果を奏する。
しかし実施例2の方が、工程の短縮が図られ、スループ
ットの向上が図られる。
ットの向上が図られる。
更に本発明は実施例1と実施例2とを併用した露光装置
、即ち実施例1の液浸と実施例2の加熱装置内蔵のチャ
ックプレート19とを併用した露光装置、たとえば縮小
投影露光装置を用いてもよい、この場合、特にネガ形レ
ジストの場合にはより高い解像度を得ることができ、ま
たポジ形レジストの場合には解像度及び寸法制御性の向
上とを図ることができる。
、即ち実施例1の液浸と実施例2の加熱装置内蔵のチャ
ックプレート19とを併用した露光装置、たとえば縮小
投影露光装置を用いてもよい、この場合、特にネガ形レ
ジストの場合にはより高い解像度を得ることができ、ま
たポジ形レジストの場合には解像度及び寸法制御性の向
上とを図ることができる。
以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野である被処理部材としての
ウェハのパターン露光に適用した場合について説明した
が、それに限定されろものではなく、たとえばレチクル
などのパターン形成のための露光全般に適用できる。本
発明は被処理部材とじ【、少なくとも露光ケ必要とされ
るものには適用できろ。
をその背景となった利用分野である被処理部材としての
ウェハのパターン露光に適用した場合について説明した
が、それに限定されろものではなく、たとえばレチクル
などのパターン形成のための露光全般に適用できる。本
発明は被処理部材とじ【、少なくとも露光ケ必要とされ
るものには適用できろ。
第1図は本発明による露光装置の一実施例を示す簡略構
成図、 第2図(al〜(C)および@3図は本発明を説明する
ための図である。 11・・・水銀ランプ、12・・・集光レンズ、13・
°。 11元照明系、14・・・レチクル、15・・・縮小レ
ンズ系、15a、15b・・レンズ、16・・・筒状部
材、17・・・ウェハ、18・・・水、19・・・チャ
ックプレート、20・・・XY移動ステージ。 第 1 図 第 2 図 第 3 図 4(/7ン
成図、 第2図(al〜(C)および@3図は本発明を説明する
ための図である。 11・・・水銀ランプ、12・・・集光レンズ、13・
°。 11元照明系、14・・・レチクル、15・・・縮小レ
ンズ系、15a、15b・・レンズ、16・・・筒状部
材、17・・・ウェハ、18・・・水、19・・・チャ
ックプレート、20・・・XY移動ステージ。 第 1 図 第 2 図 第 3 図 4(/7ン
Claims (1)
- 【特許請求の範囲】 1、露光照明系からの光をマスク及びレンズを介して載
置台上に配置される被処理部材上に照射してパターン露
光を行なうようにした露光装置において、前記レンズと
被処理部材の間あるいは前記レンズと前記マスクの間に
前記レンズの屈折率と略等しいか、あるいは前記レンズ
の屈折率よりやや小さい屈折率の液体を介在させて露光
するようにしたことを特徴とする露光装置。 2、前記液体として水を用いてなる特許請求の範囲第1
項記載の露光装置。 3、露光照明系からの光をマスクを介して載置台上に配
置される被処理部材上に照射してパターン露光を行なう
ようにした露光装置において、前記載置台は被処理部材
を所定温度に設定するための加熱装置を備え、前記所定
温度にてパターン露光を行なうようにしたことを特徴と
する露光装置。 4、前記載置台は、前記被処理部材に対し着脱自在の真
空吸着方式を用い、かつ前記加熱装置を有するプレート
チャックとこのプレートチャックが取付けられ、移動自
在なステージとからなる特許請求の範囲第3項記載の露
光装置。 5、前記加熱装置として、ヒータあるいは高温の液体を
循環させる装置を用いてなる特許請求の範囲第3項又は
第4項記載の露光装置。 6、前記所定温度として約100℃を用いてなる特許請
求の範囲第3項ないし第5項のいずれかに記載の露光装
置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60204214A JPS6265326A (ja) | 1985-09-18 | 1985-09-18 | 露光装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60204214A JPS6265326A (ja) | 1985-09-18 | 1985-09-18 | 露光装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6265326A true JPS6265326A (ja) | 1987-03-24 |
Family
ID=16486724
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60204214A Pending JPS6265326A (ja) | 1985-09-18 | 1985-09-18 | 露光装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6265326A (ja) |
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