JP4640516B2 - 露光装置、及びデバイス製造方法 - Google Patents
露光装置、及びデバイス製造方法 Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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Description
また、露光を行う際には、解像度と同様に焦点深度(DOF)も重要となる。解像度R、及び焦点深度δはそれぞれ以下の式で表される。
R=k1・λ/NA … (1)
δ=±k2・λ/NA2 … (2)
すなわち、Zステージ52は、基板Pのフォーカス位置及び傾斜角を制御して基板Pの表面をオートフォーカス方式、及びオートレベリング方式で投影光学系PLの像面に合わせ込み、XYステージ53は基板PのX軸方向及びY軸方向における位置決めを行う。なお、ZステージとXYステージとを一体的に設けてよいことは言うまでもない。
すなわち、投影領域AR1を取り囲むように連続的に形成された回収口22Aの内部に仕切部材23が設けられた構成となっている。仕切部材23により分割された分割空間24のそれぞれは上下方向で貫通している。そして、回収部材22のうち、回収口22Aを有する下端部は基板Pの表面に近接され、一方、上端部は複数の分割空間24を空間的に集合する集合空間部であるマニホールド部25となっている。そして、このマニホールド部25に回収管21Aの一端部が接続され、他端部が液体回収部21に接続されている。液体回収機構20は、液体回収部21を駆動することにより、回収口22A(回収部材22)及び回収管21Aを介して基板P上の液体1を回収する。すなわち、回収口22Aの設置位置が基板P上の液体1の回収を行う回収位置であり、液体回収機構20は投影領域AR1から離れた回収位置で基板P上の液体1の回収を行うようになっている。ここで、液体回収機構20の回収口22Aは平面視略円環状であって投影領域AR1を取り囲んだ構成となっている。すなわち、回収口22Aは、矩形の投影領域AR1の4つの側(+X方向側、−X方向側、+Y方向側、−Y方向側)、換言すると投影領域AR1に対して直交する4つの方向に離れた4つの位置に存在している。したがって、液体回収機構20は、投影領域AR1を取り囲むように設けられている回収口22Aより、投影領域AR1に対して異なる複数の方向に離れた複数の位置で基板P上の液体1の回収を同時に行うことができる。
ここで、表面処理のための薄膜は液体1に対して非溶解性の材料により形成される。また、親液化処理は、使用する液体1の材料特性に応じてその処理条件を適宜変更される。
このとき、液体供給機構10は走査方向に関して投影領域AR1の両側から供給口13A、14Aを介して液体1の供給を同時に行っているので、液浸領域AR2は均一且つ良好に形成されている。また、液体回収機構20は、投影領域AR1を囲む回収部材22の回収口22Aを介して投影領域AR1の走査方向両側を含む投影領域AR1周囲の複数の位置において液体1の回収を同時に行っているため、液体1の基板P周囲への流出や飛散を防止している。なお、本実施形態においては、基板P表面の感光材との親和性が低い純水を液体1として供給するようにしているので、液体回収機構20による回収を円滑に行うことができる。
これにより、基板P上に液体1が残存する等の不都合の発生が抑えられている。
換言すれば、液体供給機構10は、1つの基板Pに関する一連の露光処理動作が終了するまで(基板Pが基板ステージPSTにロードされて全ショット領域S1〜S12に対する露光処理が終了して基板ステージPSTからアンロードされるまで)、複数の位置から液体1を供給し続ける。これにより、液体1の供給及び停止に起因する液体の振動(ウォーターハンマー現象)の発生を防止することができる。
この場合も、投影領域AR1を取り囲むように形成された回収口で回収動作を継続的に行なっているので、液体1がいずれの方向に濡れ拡がっても、液体1を良好に回収することができる。
また、スリット管部76の他端部は回収部材22の内部流路22Hの上端部に接続している。ここで、スリット管部76の一端部は直管部75とほぼ同じ大きさに形成され、一方、スリット管部76の他端部は円環状の回収部材22の上端部の略1/4の大きさに形成されている。そして、スリット管部76は一端部から他端部に向かって水平方向に漸次拡がるように平面視略三角形状に形成されており、スリット管部76に形成されているスリット状の内部流路76Hは一端部から他端部に向かって水平方向に漸次拡がるように形成されている。
同様に、第2液体供給部12から送出された液体1も第2供給管42及び第2供給部材14を介して基板P上に均一に供給される。
第2部材92は、投影光学系PLの−X側に形成され、第1部材91の第1供給穴部94Aに接続する第3供給穴部94Bと、投影光学系PLの+X側に形成され、第1部材91の第2供給穴部95Aに接続する第4供給穴部95Bとを備えている。第3、第4供給穴部94B、95Bそれぞれの形状及び大きさは、第1、第2供給穴部94A、95Aに対応している。
照射した測長ビーム及び参照ビームに基づく移動鏡55及び参照鏡114それぞれからの反射光はレーザ干渉計56の受光部で受光され、レーザ干渉計56はこれら光を干渉し、参照ビームの光路長を基準とした測長ビームの光路長の変化量、ひいては、参照鏡114を基準とした移動鏡55の位置情報、すなわち基板ステージPSTの位置情報を計測する。同様に、不図示ではあるが、基板ステージPST上及び鏡筒PKの+Y側にも移動鏡及び参照鏡が設けられ、これらに対向する位置にはレーザ干渉計が設けられている。
更に、焦点深度は空気中に比べて約n倍、すなわち約1.44倍程度に拡大されるため、空気中で使用する場合と同程度の焦点深度が確保できればよい場合には、投影光学系PLの開口数をより増加させることができ、この点でも解像度が向上する。
13…第1供給部材、13A…供給口、14…第2供給部材、14A…供給口、
20…液体回収機構、21…液体回収部、22…回収部材、22A…回収口、
23…仕切部材(仕切り)、30…トラップ部材、31…トラップ面、
32…フィン部材(トラップ部材)、AR1…投影領域、AR2…液浸領域、
CONT…制御装置、EX…露光装置、M…マスク、P…基板、PL…投影光学系、
S1〜S12…ショット領域
Claims (17)
- 所定パターンの像を液体を介して基板に投影することによって基板を露光する露光装置であって:
前記パターンの像を基板に投影する投影光学系と;
前記投影光学系の投影領域を含む基板上の一部に液浸領域を形成するために基板上に液体を供給する液体供給機構と;
基板上の液体の回収を複数の位置で同時に行う液体回収機構と;を備え、
前記液体回収機構は液体回収位置に応じて異なる回収力で液体を回収する露光装置。 - 前記基板上の各ショット領域は所定の走査方向に移動しながら露光され、前記液体回収機構は、前記投影領域に対して前記走査方向に離れた位置での液体回収力を、それとは別の位置での液体回収力よりも大きくする請求項1記載の露光装置。
- 前記液体回収機構は、前記投影領域の両側で前記回収を同時に行う請求項1又は2に記載の露光装置。
- 前記液体回収機構は、前記投影領域を取り囲むように連続的に形成された回収口を有する請求項1〜3のいずれか一項記載の露光装置。
- 前記連続的に形成された回収口の内部に仕切りが設けられている請求項4に記載の露光装置。
- 前記投影領域に対して前記液体回収機構による液体回収位置の外側に配置され、前記液体回収機構で回収しきれなかった液体を捕捉する所定長さの液体トラップ面が形成されたトラップ部材を更に備える請求項1〜5のいずれか一項に記載の露光装置。
- 前記トラップ面は、前記液体との親和性を高める処理が施されている請求項6記載の露光装置。
- 前記トラップ面の液体親和性は、前記基板表面の液体親和性よりも高い請求項6又は7に記載の露光装置。
- 前記トラップ面は水平面に対して傾斜している請求項6〜8のいずれか一項に記載の露光装置。
- 前記トラップ面は、前記投影領域を取り囲むように配置され、その位置に応じて長さが異なる請求項6〜9のいずれか一項に記載の露光装置。
- 前記トラップ面で捕捉された液体は、前記液体回収機構に回収される請求項6〜10のいずれか一項に記載の露光装置。
- 前記液体供給機構は、前記液体回収機構による液体回収位置と前記投影領域との間で液体の供給を行う請求項1〜11のいずれか一項に記載の露光装置。
- 前記液体供給機構は実行動作に応じて液体の供給量を変える請求項1〜12のいずれか一項に記載の露光装置。
- 前記基板上の各ショット領域は前記基板を移動しながら走査露光され、前記液体供給機構は、前記基板上の2つのショット領域間のステッピング移動中と各ショット領域の露光中とで液体の供給量を異ならせる請求項13に記載の露光装置。
- 前記液体供給機構は、前記投影光学系の先端の液体接触面との親和性が前記基板表面との親和性よりも高い液体を供給する請求項1〜14のいずれか一項に記載の露光装置。
- 前記液体は水であって、前記投影光学系の先端の液体接触面は親水化処理を施されており、前記基板表面には撥水性の感光材が塗布されている請求項15に記載の露光装置。
- 請求項1〜請求項16のいずれか一項記載の露光装置を用いることを特徴とするデバイス製造方法。
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Families Citing this family (147)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101036114B1 (ko) * | 2002-12-10 | 2011-05-23 | 가부시키가이샤 니콘 | 노광장치 및 노광방법, 디바이스 제조방법 |
KR101562447B1 (ko) * | 2003-02-26 | 2015-10-21 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
JP4735258B2 (ja) | 2003-04-09 | 2011-07-27 | 株式会社ニコン | 露光方法及び装置、並びにデバイス製造方法 |
KR20170064003A (ko) * | 2003-04-10 | 2017-06-08 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
CN104597717B (zh) * | 2003-04-10 | 2017-09-05 | 株式会社尼康 | 包括用于沉浸光刻装置的真空清除的环境系统 |
TW201415536A (zh) * | 2003-05-23 | 2014-04-16 | 尼康股份有限公司 | 曝光方法及曝光裝置以及元件製造方法 |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
JP3862678B2 (ja) * | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
DE60308161T2 (de) | 2003-06-27 | 2007-08-09 | Asml Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung eines Artikels |
EP1494079B1 (en) * | 2003-06-27 | 2008-01-02 | ASML Netherlands B.V. | Lithographic Apparatus |
EP2264531B1 (en) | 2003-07-09 | 2013-01-16 | Nikon Corporation | Exposure apparatus and device manufacturing method |
KR101296501B1 (ko) | 2003-07-09 | 2013-08-13 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
TWI245163B (en) * | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP3223074A1 (en) | 2003-09-03 | 2017-09-27 | Nikon Corporation | Apparatus and method for immersion lithography for recovering fluid |
JP4444920B2 (ja) | 2003-09-19 | 2010-03-31 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
TW201834020A (zh) | 2003-10-28 | 2018-09-16 | 日商尼康股份有限公司 | 照明光學裝置、曝光裝置、曝光方法以及元件製造方法 |
US7528929B2 (en) | 2003-11-14 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TW201809801A (zh) | 2003-11-20 | 2018-03-16 | 日商尼康股份有限公司 | 光學照明裝置、曝光裝置、曝光方法、以及元件製造方法 |
TW201809727A (zh) | 2004-02-06 | 2018-03-16 | 日商尼康股份有限公司 | 偏光變換元件 |
DE102004013886A1 (de) | 2004-03-16 | 2005-10-06 | Carl Zeiss Smt Ag | Verfahren zur Mehrfachbelichtung, Mikrolithografie-Projektionsbelichtungsanlage und Projektionssystem |
KR101504445B1 (ko) | 2004-03-25 | 2015-03-19 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
US7034917B2 (en) * | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
KR101330370B1 (ko) * | 2004-04-19 | 2013-11-15 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
EP1747499A2 (en) | 2004-05-04 | 2007-01-31 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
US7486381B2 (en) | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20070103661A1 (en) * | 2004-06-04 | 2007-05-10 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
EP1768169B9 (en) * | 2004-06-04 | 2013-03-06 | Nikon Corporation | Exposure apparatus, exposure method, and device producing method |
US8373843B2 (en) | 2004-06-10 | 2013-02-12 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
EP3067749B1 (en) * | 2004-06-10 | 2017-10-18 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8717533B2 (en) | 2004-06-10 | 2014-05-06 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US20070139628A1 (en) * | 2004-06-10 | 2007-06-21 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US20070222959A1 (en) * | 2004-06-10 | 2007-09-27 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8508713B2 (en) | 2004-06-10 | 2013-08-13 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
KR101699965B1 (ko) | 2004-06-10 | 2017-01-25 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
WO2005125186A1 (en) * | 2004-06-15 | 2005-12-29 | Quantum Semiconductor Llc | Imaging devices operable with multiple aspect ratios |
US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR101264939B1 (ko) | 2004-09-17 | 2013-05-15 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
US7133114B2 (en) | 2004-09-20 | 2006-11-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TWI538013B (zh) | 2004-11-18 | 2016-06-11 | 尼康股份有限公司 | A position measuring method, a position control method, a measuring method, a loading method, an exposure method and an exposure apparatus, and a device manufacturing method |
KR101559621B1 (ko) | 2004-12-06 | 2015-10-13 | 가부시키가이샤 니콘 | 메인터넌스 방법, 메인터넌스 기기, 노광 장치, 및 디바이스 제조 방법 |
US7180571B2 (en) * | 2004-12-08 | 2007-02-20 | Asml Netherlands B.V. | Lithographic projection apparatus and actuator |
EP3428724A1 (en) | 2004-12-15 | 2019-01-16 | Nikon Corporation | Exposure apparatus and device fabricating method |
EP1681597B1 (en) * | 2005-01-14 | 2010-03-10 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20090262316A1 (en) | 2005-01-31 | 2009-10-22 | Nikon Corporation | Exposure apparatus and method for producing device |
US8692973B2 (en) | 2005-01-31 | 2014-04-08 | Nikon Corporation | Exposure apparatus and method for producing device |
US7324185B2 (en) | 2005-03-04 | 2008-01-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2006261606A (ja) * | 2005-03-18 | 2006-09-28 | Canon Inc | 露光装置、露光方法及びデバイス製造方法 |
EP1865539A4 (en) | 2005-03-30 | 2011-09-07 | Nikon Corp | METHOD FOR DETERMINING EXPOSURE CONDITIONS, EXPOSURE METHOD, EXPOSURE DEVICE, AND DEVICE PRODUCTION APPARATUS |
TW200644079A (en) * | 2005-03-31 | 2006-12-16 | Nikon Corp | Exposure apparatus, exposure method, and device production method |
US20070132976A1 (en) * | 2005-03-31 | 2007-06-14 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US7411654B2 (en) | 2005-04-05 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20060232753A1 (en) | 2005-04-19 | 2006-10-19 | Asml Holding N.V. | Liquid immersion lithography system with tilted liquid flow |
KR101396620B1 (ko) | 2005-04-25 | 2014-05-16 | 가부시키가이샤 니콘 | 노광 방법, 노광 장치, 및 디바이스 제조 방법 |
EP2527921A3 (en) | 2005-04-28 | 2017-10-18 | Nikon Corporation | Exposure method and exposure apparatus |
US8248577B2 (en) | 2005-05-03 | 2012-08-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7317507B2 (en) | 2005-05-03 | 2008-01-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR101504765B1 (ko) | 2005-05-12 | 2015-03-30 | 가부시키가이샤 니콘 | 투영 광학계, 노광 장치 및 노광 방법 |
US20070085989A1 (en) * | 2005-06-21 | 2007-04-19 | Nikon Corporation | Exposure apparatus and exposure method, maintenance method, and device manufacturing method |
JP5045437B2 (ja) | 2005-06-21 | 2012-10-10 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
US7170583B2 (en) * | 2005-06-29 | 2007-01-30 | Asml Netherlands B.V. | Lithographic apparatus immersion damage control |
JP5194792B2 (ja) | 2005-06-30 | 2013-05-08 | 株式会社ニコン | 露光装置及び方法、露光装置のメンテナンス方法、並びにデバイス製造方法 |
JP5040653B2 (ja) | 2005-08-23 | 2012-10-03 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
US7751026B2 (en) * | 2005-08-25 | 2010-07-06 | Nikon Corporation | Apparatus and method for recovering fluid for immersion lithography |
EP1950794A4 (en) * | 2005-10-07 | 2010-03-31 | Nikon Corp | METHOD FOR MEASURING AN OPTICAL CHARACTERISTIC, EXPOSURE METHOD, COMPONENT MANUFACTURING METHOD, INVESTIGATION DEVICE AND MEASURING METHOD |
JPWO2007055199A1 (ja) | 2005-11-09 | 2009-04-30 | 株式会社ニコン | 露光装置及び方法、並びにデバイス製造方法 |
US20070127002A1 (en) * | 2005-11-09 | 2007-06-07 | Nikon Corporation | Exposure apparatus and method, and device manufacturing method |
US7773195B2 (en) * | 2005-11-29 | 2010-08-10 | Asml Holding N.V. | System and method to increase surface tension and contact angle in immersion lithography |
TW200725195A (en) | 2005-12-06 | 2007-07-01 | Nikon Corp | Exposure method, exposure apparatus, and unit manufacturing method |
US7782442B2 (en) | 2005-12-06 | 2010-08-24 | Nikon Corporation | Exposure apparatus, exposure method, projection optical system and device producing method |
TW200722935A (en) | 2005-12-06 | 2007-06-16 | Nikon Corp | Exposure apparatus, exposure method, projection optical system and device manufacturing method |
US8953148B2 (en) * | 2005-12-28 | 2015-02-10 | Nikon Corporation | Exposure apparatus and making method thereof |
WO2007077875A1 (ja) | 2005-12-28 | 2007-07-12 | Nikon Corporation | 露光装置及び露光方法、並びにデバイス製造方法 |
TWI550688B (zh) * | 2006-01-19 | 2016-09-21 | 尼康股份有限公司 | 液浸曝光裝置及液浸曝光方法、以及元件製造方法 |
WO2007094431A1 (ja) | 2006-02-16 | 2007-08-23 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
WO2007094414A1 (ja) | 2006-02-16 | 2007-08-23 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
JPWO2007094470A1 (ja) * | 2006-02-16 | 2009-07-09 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
WO2007094407A1 (ja) | 2006-02-16 | 2007-08-23 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
CN102866591B (zh) | 2006-02-21 | 2015-08-19 | 株式会社尼康 | 曝光装置及方法、以及元件制造方法 |
EP2003680B1 (en) | 2006-02-21 | 2013-05-29 | Nikon Corporation | Exposure apparatus, exposure method and device manufacturing method |
KR101495471B1 (ko) | 2006-02-21 | 2015-02-23 | 가부시키가이샤 니콘 | 패턴 형성 장치, 마크 검출 장치, 노광 장치, 패턴 형성 방법, 노광 방법 및 디바이스 제조 방법 |
WO2007102484A1 (ja) | 2006-03-07 | 2007-09-13 | Nikon Corporation | デバイス製造方法、デバイス製造システム及び測定検査装置 |
EP1995768A4 (en) | 2006-03-13 | 2013-02-06 | Nikon Corp | EXPOSURE DEVICE, MAINTENANCE METHOD, EXPOSURE METHOD AND DEVICE MANUFACTURING METHOD |
JP4889331B2 (ja) * | 2006-03-22 | 2012-03-07 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
US9477158B2 (en) | 2006-04-14 | 2016-10-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2007119821A1 (ja) * | 2006-04-14 | 2007-10-25 | Nikon Corporation | 露光方法及び露光装置、並びにデバイス製造方法 |
EP2023378B1 (en) | 2006-05-10 | 2013-03-13 | Nikon Corporation | Exposure apparatus and device manufacturing method |
JP5217239B2 (ja) | 2006-05-18 | 2013-06-19 | 株式会社ニコン | 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法 |
TW200818256A (en) * | 2006-05-22 | 2008-04-16 | Nikon Corp | Exposure method and apparatus, maintenance method, and device manufacturing method |
JP5019170B2 (ja) | 2006-05-23 | 2012-09-05 | 株式会社ニコン | メンテナンス方法、露光方法及び装置、並びにデバイス製造方法 |
KR20090023545A (ko) | 2006-05-31 | 2009-03-05 | 가부시키가이샤 니콘 | 노광 장치 및 노광 방법 |
CN101390194B (zh) | 2006-06-30 | 2011-04-20 | 株式会社尼康 | 维修方法、曝光方法及装置、以及元件制造方法 |
US7826030B2 (en) * | 2006-09-07 | 2010-11-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7872730B2 (en) | 2006-09-15 | 2011-01-18 | Nikon Corporation | Immersion exposure apparatus and immersion exposure method, and device manufacturing method |
KR101413891B1 (ko) | 2006-09-29 | 2014-06-30 | 가부시키가이샤 니콘 | 노광 장치 및 노광 방법, 그리고 디바이스 제조 방법 |
US8208116B2 (en) | 2006-11-03 | 2012-06-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography system using a sealed wafer bath |
US8253922B2 (en) | 2006-11-03 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography system using a sealed wafer bath |
US20080158531A1 (en) * | 2006-11-15 | 2008-07-03 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
JP5055971B2 (ja) | 2006-11-16 | 2012-10-24 | 株式会社ニコン | 表面処理方法及び表面処理装置、露光方法及び露光装置、並びにデバイス製造方法 |
TW200905157A (en) | 2007-04-12 | 2009-02-01 | Nikon Corp | Measuring method, exposure method, and device fabricating method |
WO2008146819A1 (ja) | 2007-05-28 | 2008-12-04 | Nikon Corporation | 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法 |
US8164736B2 (en) * | 2007-05-29 | 2012-04-24 | Nikon Corporation | Exposure method, exposure apparatus, and method for producing device |
US8098362B2 (en) | 2007-05-30 | 2012-01-17 | Nikon Corporation | Detection device, movable body apparatus, pattern formation apparatus and pattern formation method, exposure apparatus and exposure method, and device manufacturing method |
US20080304025A1 (en) * | 2007-06-08 | 2008-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for immersion lithography |
US8547527B2 (en) | 2007-07-24 | 2013-10-01 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and pattern formation apparatus, and device manufacturing method |
US8194232B2 (en) | 2007-07-24 | 2012-06-05 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, position control method and position control system, and device manufacturing method |
KR101409149B1 (ko) | 2007-07-24 | 2014-06-17 | 가부시키가이샤 니콘 | 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법 |
US20090051895A1 (en) * | 2007-08-24 | 2009-02-26 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, device manufacturing method, and processing system |
US9304412B2 (en) | 2007-08-24 | 2016-04-05 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and measuring method |
US8023106B2 (en) | 2007-08-24 | 2011-09-20 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method |
US8218129B2 (en) | 2007-08-24 | 2012-07-10 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, measuring method, and position measurement system |
US8237919B2 (en) | 2007-08-24 | 2012-08-07 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method for continuous position measurement of movable body before and after switching between sensor heads |
US8867022B2 (en) | 2007-08-24 | 2014-10-21 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, and device manufacturing method |
US8451427B2 (en) | 2007-09-14 | 2013-05-28 | Nikon Corporation | Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method |
JP5267029B2 (ja) | 2007-10-12 | 2013-08-21 | 株式会社ニコン | 照明光学装置、露光装置及びデバイスの製造方法 |
WO2009050976A1 (en) | 2007-10-16 | 2009-04-23 | Nikon Corporation | Illumination optical system, exposure apparatus, and device manufacturing method |
SG185313A1 (en) | 2007-10-16 | 2012-11-29 | Nikon Corp | Illumination optical system, exposure apparatus, and device manufacturing method |
US8279399B2 (en) | 2007-10-22 | 2012-10-02 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
US8379187B2 (en) | 2007-10-24 | 2013-02-19 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
US9116346B2 (en) | 2007-11-06 | 2015-08-25 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
US9013681B2 (en) * | 2007-11-06 | 2015-04-21 | Nikon Corporation | Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method |
CN101675500B (zh) * | 2007-11-07 | 2011-05-18 | 株式会社尼康 | 曝光装置、曝光方法以及元件制造方法 |
US9256140B2 (en) * | 2007-11-07 | 2016-02-09 | Nikon Corporation | Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method with measurement device to measure movable body in Z direction |
US8665455B2 (en) * | 2007-11-08 | 2014-03-04 | Nikon Corporation | Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method |
US8422015B2 (en) | 2007-11-09 | 2013-04-16 | Nikon Corporation | Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method |
US8711327B2 (en) * | 2007-12-14 | 2014-04-29 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
SG183058A1 (en) * | 2007-12-17 | 2012-08-30 | Nikon Corp | Exposure apparatus, exposure method and device manufacturing method |
TWI643035B (zh) | 2007-12-28 | 2018-12-01 | 日商尼康股份有限公司 | Exposure apparatus, exposure method, and component manufacturing method |
NL1036715A1 (nl) | 2008-04-16 | 2009-10-19 | Asml Netherlands Bv | Lithographic apparatus. |
JP5360057B2 (ja) | 2008-05-28 | 2013-12-04 | 株式会社ニコン | 空間光変調器の検査装置および検査方法、照明光学系、照明光学系の調整方法、露光装置、およびデバイス製造方法 |
US20100165309A1 (en) * | 2008-07-10 | 2010-07-01 | Nikon Corporation | Deformation measuring apparatus, exposure apparatus, jig for the deformation measuring apparatus, position measuring method and device fabricating method |
NL2003225A1 (nl) * | 2008-07-25 | 2010-01-26 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method. |
US8384875B2 (en) | 2008-09-29 | 2013-02-26 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8619231B2 (en) | 2009-05-21 | 2013-12-31 | Nikon Corporation | Cleaning method, exposure method, and device manufacturing method |
WO2011053004A2 (ko) * | 2009-10-29 | 2011-05-05 | 주식회사 엘지화학 | 저반사 및 고접촉각을 갖는 기판 및 이의 제조방법 |
EP2502115A4 (en) * | 2009-11-20 | 2013-11-06 | Pelican Imaging Corp | RECORDING AND PROCESSING IMAGES THROUGH A MONOLITHIC CAMERA ARRAY WITH HETEROGENIC IMAGE CONVERTER |
US9651873B2 (en) | 2012-12-27 | 2017-05-16 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium |
US9352073B2 (en) | 2013-01-22 | 2016-05-31 | Niko Corporation | Functional film |
US9057955B2 (en) | 2013-01-22 | 2015-06-16 | Nikon Corporation | Functional film, liquid immersion member, method of manufacturing liquid immersion member, exposure apparatus, and device manufacturing method |
WO2014132923A1 (ja) | 2013-02-28 | 2014-09-04 | 株式会社ニコン | 摺動膜、摺動膜が形成された部材、及びその製造方法 |
US20140292111A1 (en) * | 2013-03-28 | 2014-10-02 | Ebara Corporation | Stage device and electron beam application apparatus |
KR102552792B1 (ko) | 2015-02-23 | 2023-07-06 | 가부시키가이샤 니콘 | 계측 장치, 리소그래피 시스템 및 노광 장치, 그리고 디바이스 제조 방법 |
JP6719729B2 (ja) | 2015-02-23 | 2020-07-08 | 株式会社ニコン | 基板処理システム及び基板処理方法、並びにデバイス製造方法 |
KR102574558B1 (ko) | 2015-02-23 | 2023-09-04 | 가부시키가이샤 니콘 | 계측 장치, 리소그래피 시스템 및 노광 장치, 그리고 관리 방법, 중첩 계측 방법 및 디바이스 제조 방법 |
KR20190040279A (ko) | 2016-08-24 | 2019-04-17 | 가부시키가이샤 니콘 | 계측 시스템 및 기판 처리 시스템, 그리고 디바이스 제조 방법 |
KR20240011232A (ko) | 2016-09-30 | 2024-01-25 | 가부시키가이샤 니콘 | 계측 시스템 및 기판 처리 시스템, 그리고 디바이스 제조 방법 |
JP7431597B2 (ja) * | 2020-02-05 | 2024-02-15 | キヤノン株式会社 | 振動制御装置、露光装置、および物品製造方法 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57153433A (en) * | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JPS6265326A (ja) * | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
JPH06124873A (ja) * | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JPH07220990A (ja) * | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
JPH10255319A (ja) * | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
JPH10303114A (ja) * | 1997-04-23 | 1998-11-13 | Nikon Corp | 液浸型露光装置 |
JPH10340846A (ja) * | 1997-06-10 | 1998-12-22 | Nikon Corp | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
JPH11176727A (ja) * | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
WO1999049504A1 (fr) * | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
JP2000058436A (ja) * | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
Family Cites Families (236)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1242527A (en) * | 1967-10-20 | 1971-08-11 | Kodak Ltd | Optical instruments |
US3573975A (en) * | 1968-07-10 | 1971-04-06 | Ibm | Photochemical fabrication process |
EP0023231B1 (de) | 1979-07-27 | 1982-08-11 | Tabarelli, Werner, Dr. | Optisches Lithographieverfahren und Einrichtung zum Kopieren eines Musters auf eine Halbleiterscheibe |
FR2474708B1 (fr) | 1980-01-24 | 1987-02-20 | Dme | Procede de microphotolithographie a haute resolution de traits |
JPS5754317A (en) * | 1980-09-19 | 1982-03-31 | Hitachi Ltd | Method and device for forming pattern |
US4509852A (en) * | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
US4390273A (en) * | 1981-02-17 | 1983-06-28 | Censor Patent-Und Versuchsanstalt | Projection mask as well as a method and apparatus for the embedding thereof and projection printing system |
JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
DD206607A1 (de) | 1982-06-16 | 1984-02-01 | Mikroelektronik Zt Forsch Tech | Verfahren und vorrichtung zur beseitigung von interferenzeffekten |
JPS5919912A (ja) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
DD242880A1 (de) | 1983-01-31 | 1987-02-11 | Kuch Karl Heinz | Einrichtung zur fotolithografischen strukturuebertragung |
DD221563A1 (de) * | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
JPS6194342U (ja) | 1984-11-27 | 1986-06-18 | ||
JPS62121417A (ja) | 1985-11-22 | 1987-06-02 | Hitachi Ltd | 液浸対物レンズ装置 |
JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
US5040020A (en) * | 1988-03-31 | 1991-08-13 | Cornell Research Foundation, Inc. | Self-aligned, high resolution resonant dielectric lithography |
JPH0263664A (ja) | 1988-08-31 | 1990-03-02 | Keihin Seiki Mfg Co Ltd | 真空ダイカスト装置 |
JPH069195B2 (ja) * | 1989-05-06 | 1994-02-02 | 大日本スクリーン製造株式会社 | 基板の表面処理方法 |
JPH03209479A (ja) | 1989-09-06 | 1991-09-12 | Sanee Giken Kk | 露光方法 |
US5121256A (en) * | 1991-03-14 | 1992-06-09 | The Board Of Trustees Of The Leland Stanford Junior University | Lithography system employing a solid immersion lens |
JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH0562877A (ja) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | 光によるlsi製造縮小投影露光装置の光学系 |
JPH06188169A (ja) | 1992-08-24 | 1994-07-08 | Canon Inc | 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法 |
US5304759A (en) | 1992-10-15 | 1994-04-19 | Johnson Service Company | Direct mount pressure control with a field adjustable trip point and reset point |
JP2753930B2 (ja) * | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
JP2520833B2 (ja) | 1992-12-21 | 1996-07-31 | 東京エレクトロン株式会社 | 浸漬式の液処理装置 |
US6989647B1 (en) | 1994-04-01 | 2006-01-24 | Nikon Corporation | Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device |
US7365513B1 (en) | 1994-04-01 | 2008-04-29 | Nikon Corporation | Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device |
US5528118A (en) | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
US5874820A (en) | 1995-04-04 | 1999-02-23 | Nikon Corporation | Window frame-guided stage mechanism |
US5623853A (en) | 1994-10-19 | 1997-04-29 | Nikon Precision Inc. | Precision motion stage with single guide beam and follower stage |
US6008500A (en) | 1995-04-04 | 1999-12-28 | Nikon Corporation | Exposure apparatus having dynamically isolated reaction frame |
JPH08316124A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
US5661092A (en) * | 1995-09-01 | 1997-08-26 | The University Of Connecticut | Ultra thin silicon oxide and metal oxide films and a method for the preparation thereof |
US6297871B1 (en) * | 1995-09-12 | 2001-10-02 | Nikon Corporation | Exposure apparatus |
WO1998009278A1 (en) * | 1996-08-26 | 1998-03-05 | Digital Papyrus Technologies | Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction |
US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
CN1244018C (zh) | 1996-11-28 | 2006-03-01 | 株式会社尼康 | 曝光方法和曝光装置 |
JP4029182B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 露光方法 |
JP4029183B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 投影露光装置及び投影露光方法 |
JP3728613B2 (ja) * | 1996-12-06 | 2005-12-21 | 株式会社ニコン | 走査型露光装置の調整方法及び該方法を使用する走査型露光装置 |
DE69735016T2 (de) | 1996-12-24 | 2006-08-17 | Asml Netherlands B.V. | Lithographisches Gerät mit zwei Objekthaltern |
US5815246A (en) | 1996-12-24 | 1998-09-29 | U.S. Philips Corporation | Two-dimensionally balanced positioning device, and lithographic device provided with such a positioning device |
JP3612920B2 (ja) | 1997-02-14 | 2005-01-26 | ソニー株式会社 | 光学記録媒体の原盤作製用露光装置 |
USRE40043E1 (en) | 1997-03-10 | 2008-02-05 | Asml Netherlands B.V. | Positioning device having two object holders |
US5744294A (en) * | 1997-04-30 | 1998-04-28 | Eastman Kodak Company | Radiographic element modified to provide protection from visual fatigue |
US5900354A (en) * | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
US6563565B2 (en) * | 1997-08-27 | 2003-05-13 | Nikon Corporation | Apparatus and method for projection exposure |
EP1041607A4 (en) | 1997-11-12 | 2003-11-05 | Nikon Corp | PROJECTION EXPOSURE APPARATUS |
WO1999031717A1 (fr) | 1997-12-12 | 1999-06-24 | Nikon Corporation | Procede d'exposition par projection et graveur a projection |
US6208407B1 (en) | 1997-12-22 | 2001-03-27 | Asm Lithography B.V. | Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement |
US6522777B1 (en) | 1998-07-08 | 2003-02-18 | Ppt Vision, Inc. | Combined 3D- and 2D-scanning machine-vision system and method |
KR19980081982A (ko) * | 1998-08-11 | 1998-11-25 | 양승창 | 형광등 반사갓 |
JP2000173884A (ja) * | 1998-12-02 | 2000-06-23 | Canon Inc | デバイス製造装置および方法ならびにデバイス製造装置の配線・配管実装方法 |
US6377332B1 (en) * | 1999-02-03 | 2002-04-23 | Nikon Corporation | Optical member for photolithography and photolithography apparatus |
AU2327800A (en) * | 1999-02-12 | 2000-08-29 | Nikon Corporation | Exposure method and apparatus |
EP1039551B2 (en) | 1999-03-23 | 2010-09-15 | Kaneka Corporation | Photovoltaic module |
TWI242111B (en) * | 1999-04-19 | 2005-10-21 | Asml Netherlands Bv | Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus |
JP2001021875A (ja) | 1999-07-12 | 2001-01-26 | Seiko Epson Corp | 液晶装置及びこれを用いた投写型表示装置 |
KR100625625B1 (ko) * | 1999-10-07 | 2006-09-20 | 가부시키가이샤 니콘 | 기판, 스테이지 장치, 스테이지 구동 방법, 노광 장치 및노광 방법 |
JP3679668B2 (ja) | 1999-12-20 | 2005-08-03 | キヤノン株式会社 | インクジェット記録ヘッドの製造方法 |
US7187503B2 (en) * | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
US6995930B2 (en) * | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
JP2001272604A (ja) * | 2000-03-27 | 2001-10-05 | Olympus Optical Co Ltd | 液浸対物レンズおよびそれを用いた光学装置 |
US20020014403A1 (en) * | 2000-04-07 | 2002-02-07 | Eiichi Hoshino | Method of fabricating reflective mask, and methods and apparatus of detecting wet etching end point and inspecting side etching amount |
JP2002014005A (ja) | 2000-04-25 | 2002-01-18 | Nikon Corp | 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置 |
US20020041377A1 (en) | 2000-04-25 | 2002-04-11 | Nikon Corporation | Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method |
DE60130754T2 (de) | 2000-05-03 | 2008-01-24 | Asml Holding, N.V. | Apparat zur Erzeugung eines gespülten optischen Weges in einer photolithographischen Projektionsanlage sowie ein entsprechendes Verfahren |
US6488040B1 (en) | 2000-06-30 | 2002-12-03 | Lam Research Corporation | Capillary proximity heads for single wafer cleaning and drying |
JP3682914B2 (ja) | 2000-07-31 | 2005-08-17 | 巌 秋月 | データ通信システムおよびこれに用いるデータ処理装置、ブラウザを利用した接続維持方法、記録媒体 |
TW591653B (en) * | 2000-08-08 | 2004-06-11 | Koninkl Philips Electronics Nv | Method of manufacturing an optically scannable information carrier |
KR100866818B1 (ko) | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
JP2002198286A (ja) * | 2000-12-25 | 2002-07-12 | Nikon Corp | 露光装置 |
JP3961311B2 (ja) * | 2001-01-19 | 2007-08-22 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置およびデバイスの製造方法 |
WO2002063664A1 (fr) | 2001-02-06 | 2002-08-15 | Nikon Corporation | Systeme et procede d'exposition et procede de production de dispositif |
US7095482B2 (en) * | 2001-03-27 | 2006-08-22 | Nikon Corporation | Multiple system vibration isolator |
WO2002091078A1 (en) | 2001-05-07 | 2002-11-14 | Massachusetts Institute Of Technology | Methods and apparatus employing an index matching medium |
JP2002333018A (ja) * | 2001-05-09 | 2002-11-22 | Canon Inc | 流体軸受装置、およびこれを用いた露光装置ならびにデバイス製造方法 |
US6618205B2 (en) * | 2001-05-14 | 2003-09-09 | Pentax Corporation | Endoscope objective optical system |
JP2002343565A (ja) * | 2001-05-18 | 2002-11-29 | Sharp Corp | 有機led表示パネルの製造方法、その方法により製造された有機led表示パネル、並びに、その方法に用いられるベースフィルム及び基板 |
US6600547B2 (en) * | 2001-09-24 | 2003-07-29 | Nikon Corporation | Sliding seal |
US20030091767A1 (en) | 2001-11-02 | 2003-05-15 | Podhajny Richard M. | Anti-microbial packaging materials and methods for making the same |
CN1791839A (zh) * | 2001-11-07 | 2006-06-21 | 应用材料有限公司 | 光点格栅阵列光刻机 |
US20040007589A1 (en) * | 2002-02-12 | 2004-01-15 | Lindsay Leveen | Device and method for dispensing carbonated beverages |
US7092069B2 (en) * | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
DE10229818A1 (de) * | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
DE10210899A1 (de) * | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
US7362508B2 (en) | 2002-08-23 | 2008-04-22 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
US6954993B1 (en) * | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
US6988326B2 (en) * | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
US7383843B2 (en) * | 2002-09-30 | 2008-06-10 | Lam Research Corporation | Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer |
US6988327B2 (en) * | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Methods and systems for processing a substrate using a dynamic liquid meniscus |
US7093375B2 (en) * | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
US7367345B1 (en) | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
SG2010050110A (en) * | 2002-11-12 | 2014-06-27 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7110081B2 (en) * | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG121822A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
CN101470360B (zh) * | 2002-11-12 | 2013-07-24 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
DE60335595D1 (de) * | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
JP3953460B2 (ja) * | 2002-11-12 | 2007-08-08 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ投影装置 |
SG131766A1 (en) * | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10253679A1 (de) * | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
DE10258718A1 (de) | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
AU2003289272A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Surface position detection apparatus, exposure method, and device porducing method |
KR20110086130A (ko) | 2002-12-10 | 2011-07-27 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
DE10257766A1 (de) | 2002-12-10 | 2004-07-15 | Carl Zeiss Smt Ag | Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage |
JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
TW200421444A (en) | 2002-12-10 | 2004-10-16 | Nippon Kogaku Kk | Optical device and projecting exposure apparatus using such optical device |
EP1429190B1 (en) * | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Exposure apparatus and method |
KR101157002B1 (ko) | 2002-12-10 | 2012-06-21 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
SG150388A1 (en) | 2002-12-10 | 2009-03-30 | Nikon Corp | Exposure apparatus and method for producing device |
KR101036114B1 (ko) | 2002-12-10 | 2011-05-23 | 가부시키가이샤 니콘 | 노광장치 및 노광방법, 디바이스 제조방법 |
WO2004053951A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光方法及び露光装置並びにデバイス製造方法 |
SG152063A1 (en) | 2002-12-10 | 2009-05-29 | Nikon Corp | Exposure apparatus and method for producing device |
WO2004053952A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及びデバイス製造方法 |
EP1573730B1 (en) | 2002-12-13 | 2009-02-25 | Koninklijke Philips Electronics N.V. | Liquid removal in a method and device for irradiating spots on a layer |
EP1732075A3 (en) | 2002-12-19 | 2007-02-21 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
EP1579435B1 (en) | 2002-12-19 | 2007-06-27 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
US7010958B2 (en) * | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
US7112727B2 (en) * | 2002-12-20 | 2006-09-26 | Peotec Seeds S.R.L. | Mutant allele of tomato |
US6781670B2 (en) * | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
US7090964B2 (en) | 2003-02-21 | 2006-08-15 | Asml Holding N.V. | Lithographic printing with polarized light |
JP4352930B2 (ja) * | 2003-02-26 | 2009-10-28 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
KR101562447B1 (ko) | 2003-02-26 | 2015-10-21 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
US6943941B2 (en) * | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7206059B2 (en) * | 2003-02-27 | 2007-04-17 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7029832B2 (en) * | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
TW585291U (en) * | 2003-03-25 | 2004-04-21 | Quanta Comp Inc | A strap buckle apparatus for a notebook computer |
JP4488004B2 (ja) | 2003-04-09 | 2010-06-23 | 株式会社ニコン | 液浸リソグラフィ流体制御システム |
CN104597717B (zh) | 2003-04-10 | 2017-09-05 | 株式会社尼康 | 包括用于沉浸光刻装置的真空清除的环境系统 |
JP4656057B2 (ja) | 2003-04-10 | 2011-03-23 | 株式会社ニコン | 液浸リソグラフィ装置用電気浸透素子 |
KR101129213B1 (ko) | 2003-04-10 | 2012-03-27 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 액체를 수집하는 런-오프 경로 |
KR20170064003A (ko) | 2003-04-10 | 2017-06-08 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
KR101508810B1 (ko) | 2003-04-11 | 2015-04-14 | 가부시키가이샤 니콘 | 액침 리소그래피에 의한 광학기기의 세정방법 |
JP4582089B2 (ja) | 2003-04-11 | 2010-11-17 | 株式会社ニコン | 液浸リソグラフィ用の液体噴射回収システム |
KR101178756B1 (ko) | 2003-04-11 | 2012-08-31 | 가부시키가이샤 니콘 | 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침액체를 유지하는 장치 및 방법 |
JP2006523958A (ja) | 2003-04-17 | 2006-10-19 | 株式会社ニコン | 液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造 |
JP4146755B2 (ja) * | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
JP4025683B2 (ja) * | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
TWI295414B (en) * | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP1480065A3 (en) | 2003-05-23 | 2006-05-10 | Canon Kabushiki Kaisha | Projection optical system, exposure apparatus, and device manufacturing method |
JP2004349645A (ja) * | 2003-05-26 | 2004-12-09 | Sony Corp | 液浸差動排液静圧浮上パッド、原盤露光装置および液侵差動排液による露光方法 |
TWI442694B (zh) * | 2003-05-30 | 2014-06-21 | Asml Netherlands Bv | 微影裝置及元件製造方法 |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2261742A3 (en) * | 2003-06-11 | 2011-05-25 | ASML Netherlands BV | Lithographic apparatus and device manufacturing method. |
JP4084710B2 (ja) * | 2003-06-12 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP4054285B2 (ja) * | 2003-06-12 | 2008-02-27 | 松下電器産業株式会社 | パターン形成方法 |
US6867844B2 (en) * | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
JP4029064B2 (ja) * | 2003-06-23 | 2008-01-09 | 松下電器産業株式会社 | パターン形成方法 |
JP4084712B2 (ja) * | 2003-06-23 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP2005019616A (ja) * | 2003-06-25 | 2005-01-20 | Canon Inc | 液浸式露光装置 |
JP4343597B2 (ja) * | 2003-06-25 | 2009-10-14 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
JP3862678B2 (ja) * | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US6809794B1 (en) * | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
EP1498778A1 (en) * | 2003-06-27 | 2005-01-19 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE60308161T2 (de) | 2003-06-27 | 2007-08-09 | Asml Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung eines Artikels |
EP1494074A1 (en) * | 2003-06-30 | 2005-01-05 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7236232B2 (en) | 2003-07-01 | 2007-06-26 | Nikon Corporation | Using isotopically specified fluids as optical elements |
EP2264531B1 (en) * | 2003-07-09 | 2013-01-16 | Nikon Corporation | Exposure apparatus and device manufacturing method |
US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
EP1503244A1 (en) * | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
US7326522B2 (en) * | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
US7175968B2 (en) * | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
US7579135B2 (en) * | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
US7700267B2 (en) * | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
US7061578B2 (en) * | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7085075B2 (en) | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
US6954256B2 (en) * | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
US7070915B2 (en) | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
US7014966B2 (en) | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
EP3223074A1 (en) | 2003-09-03 | 2017-09-27 | Nikon Corporation | Apparatus and method for immersion lithography for recovering fluid |
US6961186B2 (en) | 2003-09-26 | 2005-11-01 | Takumi Technology Corp. | Contact printing using a magnified mask image |
US7369217B2 (en) | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
US7678527B2 (en) | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
US7411653B2 (en) | 2003-10-28 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus |
JP2007525824A (ja) | 2003-11-05 | 2007-09-06 | ディーエスエム アイピー アセッツ ビー.ブイ. | マイクロチップを製造するための方法および装置 |
US7924397B2 (en) * | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
US7528929B2 (en) * | 2003-11-14 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005054953A2 (en) | 2003-11-24 | 2005-06-16 | Carl-Zeiss Smt Ag | Holding device for an optical element in an objective |
US7545481B2 (en) | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7125652B2 (en) * | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
WO2005059617A2 (en) | 2003-12-15 | 2005-06-30 | Carl Zeiss Smt Ag | Projection objective having a high aperture and a planar end surface |
KR100965330B1 (ko) | 2003-12-15 | 2010-06-22 | 칼 짜이스 에스엠티 아게 | 적어도 한 개의 액체 렌즈를 가진 마이크로리소그래피 투사대물렌즈로서의 대물렌즈 |
US7460206B2 (en) * | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
US20050185269A1 (en) * | 2003-12-19 | 2005-08-25 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
JP5102492B2 (ja) | 2003-12-19 | 2012-12-19 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 結晶素子を有するマイクロリソグラフィー投影用対物レンズ |
US7394521B2 (en) * | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7589818B2 (en) * | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
US7119884B2 (en) | 2003-12-24 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050147920A1 (en) * | 2003-12-30 | 2005-07-07 | Chia-Hui Lin | Method and system for immersion lithography |
US7088422B2 (en) * | 2003-12-31 | 2006-08-08 | International Business Machines Corporation | Moving lens for immersion optical lithography |
JP4371822B2 (ja) * | 2004-01-06 | 2009-11-25 | キヤノン株式会社 | 露光装置 |
JP4429023B2 (ja) * | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US20050153424A1 (en) * | 2004-01-08 | 2005-07-14 | Derek Coon | Fluid barrier with transparent areas for immersion lithography |
CN102169226B (zh) | 2004-01-14 | 2014-04-23 | 卡尔蔡司Smt有限责任公司 | 反射折射投影物镜 |
KR101099847B1 (ko) | 2004-01-16 | 2011-12-27 | 칼 짜이스 에스엠티 게엠베하 | 편광변조 광학소자 |
WO2005069078A1 (en) | 2004-01-19 | 2005-07-28 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus with immersion projection lens |
DE602005019689D1 (de) | 2004-01-20 | 2010-04-15 | Zeiss Carl Smt Ag | Belichtungsvorrichtung und messeinrichtung für eine projektionslinse |
US7026259B2 (en) * | 2004-01-21 | 2006-04-11 | International Business Machines Corporation | Liquid-filled balloons for immersion lithography |
US7391501B2 (en) * | 2004-01-22 | 2008-06-24 | Intel Corporation | Immersion liquids with siloxane polymer for immersion lithography |
US8852850B2 (en) * | 2004-02-03 | 2014-10-07 | Rochester Institute Of Technology | Method of photolithography using a fluid and a system thereof |
US7050146B2 (en) * | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1716454A1 (en) | 2004-02-09 | 2006-11-02 | Carl Zeiss SMT AG | Projection objective for a microlithographic projection exposure apparatus |
EP1714192A1 (en) | 2004-02-13 | 2006-10-25 | Carl Zeiss SMT AG | Projection objective for a microlithographic projection exposure apparatus |
JP2007523383A (ja) | 2004-02-18 | 2007-08-16 | コーニング インコーポレイテッド | 深紫外光による大開口数結像のための反射屈折結像光学系 |
US20050205180A1 (en) * | 2004-03-16 | 2005-09-22 | Goudeau Michael C | Method and apparatus for three dimensional object covers |
US20050205108A1 (en) | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
US7027125B2 (en) * | 2004-03-25 | 2006-04-11 | International Business Machines Corporation | System and apparatus for photolithography |
US7084960B2 (en) * | 2004-03-29 | 2006-08-01 | Intel Corporation | Lithography using controlled polarization |
US7034917B2 (en) | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
US7227619B2 (en) | 2004-04-01 | 2007-06-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7295283B2 (en) | 2004-04-02 | 2007-11-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005098504A1 (en) | 2004-04-08 | 2005-10-20 | Carl Zeiss Smt Ag | Imaging system with mirror group |
US7898642B2 (en) | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7271878B2 (en) | 2004-04-22 | 2007-09-18 | International Business Machines Corporation | Wafer cell for immersion lithography |
US7244665B2 (en) | 2004-04-29 | 2007-07-17 | Micron Technology, Inc. | Wafer edge ring structures and methods of formation |
US20050241694A1 (en) | 2004-04-29 | 2005-11-03 | Red Flame Hot Tap Services Ltd. | Hot tapping method, system and apparatus |
US7379159B2 (en) | 2004-05-03 | 2008-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20060244938A1 (en) | 2004-05-04 | 2006-11-02 | Karl-Heinz Schuster | Microlitographic projection exposure apparatus and immersion liquid therefore |
EP1747499A2 (en) | 2004-05-04 | 2007-01-31 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
US7091502B2 (en) | 2004-05-12 | 2006-08-15 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Apparatus and method for immersion lithography |
KR20170129271A (ko) | 2004-05-17 | 2017-11-24 | 칼 짜이스 에스엠티 게엠베하 | 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈 |
US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7486381B2 (en) | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN100594430C (zh) | 2004-06-04 | 2010-03-17 | 卡尔蔡司Smt股份公司 | 用于测量光学成像系统的图像质量的系统 |
US8605257B2 (en) | 2004-06-04 | 2013-12-10 | Carl Zeiss Smt Gmbh | Projection system with compensation of intensity variations and compensation element therefor |
US8717533B2 (en) * | 2004-06-10 | 2014-05-06 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US7701550B2 (en) * | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
-
2004
- 2004-02-26 KR KR1020137025633A patent/KR101562447B1/ko active IP Right Grant
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Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57153433A (en) * | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JPS6265326A (ja) * | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
JPH06124873A (ja) * | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JPH07220990A (ja) * | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
JPH10255319A (ja) * | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
JPH10303114A (ja) * | 1997-04-23 | 1998-11-13 | Nikon Corp | 液浸型露光装置 |
JPH10340846A (ja) * | 1997-06-10 | 1998-12-22 | Nikon Corp | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
JPH11176727A (ja) * | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
WO1999049504A1 (fr) * | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
JP2000058436A (ja) * | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
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