JPH04305915A - 密着型露光装置 - Google Patents
密着型露光装置Info
- Publication number
- JPH04305915A JPH04305915A JP3094867A JP9486791A JPH04305915A JP H04305915 A JPH04305915 A JP H04305915A JP 3094867 A JP3094867 A JP 3094867A JP 9486791 A JP9486791 A JP 9486791A JP H04305915 A JPH04305915 A JP H04305915A
- Authority
- JP
- Japan
- Prior art keywords
- immersion liquid
- photoresist
- wafer
- exposure
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007788 liquid Substances 0.000 claims abstract description 32
- 238000007654 immersion Methods 0.000 claims abstract description 31
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 16
- 239000004094 surface-active agent Substances 0.000 claims abstract description 11
- 230000003287 optical effect Effects 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 9
- 230000031700 light absorption Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 150000001767 cationic compounds Chemical class 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【０００１】
【産業上の利用分野】本発明は、ＬＳＩの製造工程にお
いて、フォトマスク上のパターンをウエハ上に投影露光
する露光装置、特に密着型露光装置に関するものである
。
いて、フォトマスク上のパターンをウエハ上に投影露光
する露光装置、特に密着型露光装置に関するものである
。
【０００２】
【従来の技術】レ−ザー光等を照射しフォトマスク上の
パターンを投影光学系によってシリコンウエハ等の半導
体基板上に投影露光するこの種の露光装置における露光
方式としては、■密着（コンタクト）露光方式、■プロ
キシミティ露光方式、■反射型投影露光方式、■縮小レ
ンズ投影露光方式の４方式が知られている。
パターンを投影光学系によってシリコンウエハ等の半導
体基板上に投影露光するこの種の露光装置における露光
方式としては、■密着（コンタクト）露光方式、■プロ
キシミティ露光方式、■反射型投影露光方式、■縮小レ
ンズ投影露光方式の４方式が知られている。
【０００３】このうち密着露光方式は、フォトマスク（
または投影光学系）とウエハとを密着させて露光するも
ので、これらが完全に密着している場合には、フォトレ
ジスト中の波長が屈折率分の１に短くなるため、回折の
影響が少なく、高解像度の転写が得られるという特色を
有している。この密着は真空吸着、静電チャック等によ
って行っている。しかし、完全な密着を実現することは
極めて難しく、またフォトマスクとウエハとを機械的に
接触させているためにウエハ表面の突起等によりフォト
マスクに欠陥が生じ、その寿命を低下させると同時にデ
バイスの歩留りに影響を及ぼすといった問題があった。
または投影光学系）とウエハとを密着させて露光するも
ので、これらが完全に密着している場合には、フォトレ
ジスト中の波長が屈折率分の１に短くなるため、回折の
影響が少なく、高解像度の転写が得られるという特色を
有している。この密着は真空吸着、静電チャック等によ
って行っている。しかし、完全な密着を実現することは
極めて難しく、またフォトマスクとウエハとを機械的に
接触させているためにウエハ表面の突起等によりフォト
マスクに欠陥が生じ、その寿命を低下させると同時にデ
バイスの歩留りに影響を及ぼすといった問題があった。
【０００４】そこで、密着露光方式によるこのような問
題を解決する方法としてフォトマスクとウエハ間に液体
（浸液）を充填している。図２はウエハを浸液を介して
投影光学系に密着させた場合を示すもので、１はフォト
マスク、２は投影光学系の一部を構成する露光レンズ、
３はフォトレジスト４が塗布されたウエハ、５は露光レ
ンズ２とウエハ３間に充填された浸液、６はフォトマス
ク１のパターン７を照射しフォトレジスト４を露光する
照射光、８はウエハ３を保持する保持体、９は保持体８
を上方に付勢しウエハ３を露光レンズ２に所定圧にて押
し付ける圧縮コイルばねである。照射光６の波長は短い
ほど回折の影響が少なく、そのため光源としてエキシマ
レーザー等のレーザ−装置が用いられる。浸液５として
は、屈折率がフォトレジスト４と同程度で光の吸収が少
なく、しかもフォトレジスト４を溶かさないものが望ま
しく、通常純水が使用される。
題を解決する方法としてフォトマスクとウエハ間に液体
（浸液）を充填している。図２はウエハを浸液を介して
投影光学系に密着させた場合を示すもので、１はフォト
マスク、２は投影光学系の一部を構成する露光レンズ、
３はフォトレジスト４が塗布されたウエハ、５は露光レ
ンズ２とウエハ３間に充填された浸液、６はフォトマス
ク１のパターン７を照射しフォトレジスト４を露光する
照射光、８はウエハ３を保持する保持体、９は保持体８
を上方に付勢しウエハ３を露光レンズ２に所定圧にて押
し付ける圧縮コイルばねである。照射光６の波長は短い
ほど回折の影響が少なく、そのため光源としてエキシマ
レーザー等のレーザ−装置が用いられる。浸液５として
は、屈折率がフォトレジスト４と同程度で光の吸収が少
なく、しかもフォトレジスト４を溶かさないものが望ま
しく、通常純水が使用される。
【０００５】
【発明が解決しようとする課題】しかしながら、上述し
たような浸液５を使用した密着型露光装置においては、
浸液５自身の膜厚ムラがあると、浸液５による照射光６
の吸収量にムラが生じるため、コンタクト露光されたフ
ォトレジスト４のパターンが的確に露光されている部分
とそうでない部分とが生じてしまうという問題があった
。したがって、このような露光ムラの発生を防止するた
め、浸液５の濡れ性を高めて表面張力を下げ、膜厚ｄ１
を極力薄くすることが望まれている。
たような浸液５を使用した密着型露光装置においては、
浸液５自身の膜厚ムラがあると、浸液５による照射光６
の吸収量にムラが生じるため、コンタクト露光されたフ
ォトレジスト４のパターンが的確に露光されている部分
とそうでない部分とが生じてしまうという問題があった
。したがって、このような露光ムラの発生を防止するた
め、浸液５の濡れ性を高めて表面張力を下げ、膜厚ｄ１
を極力薄くすることが望まれている。
【０００６】本発明は上述したような従来の問題点およ
び要望に鑑みてなされたもので、その目的とするところ
は、浸液の膜厚を薄くし、浸液による露光ムラを軽減防
止し得るようにした密着型露光装置を提供することにあ
る。
び要望に鑑みてなされたもので、その目的とするところ
は、浸液の膜厚を薄くし、浸液による露光ムラを軽減防
止し得るようにした密着型露光装置を提供することにあ
る。
【０００７】
【課題を解決するための手段】本発明は上記目的を達成
するため、フォトレジストを塗布されたウエハを投影光
学系もしくはフォトマスクに浸液を介して密着させ、照
射光の照射によりフォトマスクのパターンを前記フォト
レジストに転写するようにした密着型露光装置において
、前記浸液は前記フォトレジストに影響を与えない範囲
で界面活性剤が混入されているものである。
するため、フォトレジストを塗布されたウエハを投影光
学系もしくはフォトマスクに浸液を介して密着させ、照
射光の照射によりフォトマスクのパターンを前記フォト
レジストに転写するようにした密着型露光装置において
、前記浸液は前記フォトレジストに影響を与えない範囲
で界面活性剤が混入されているものである。
【０００８】
【作用】本発明において界面活性剤は浸液の濡れ性を高
め、表面張力を下げる。したがって浸液の膜厚を薄くす
る。
め、表面張力を下げる。したがって浸液の膜厚を薄くす
る。
【０００９】
【実施例】以下、本発明を図面に示す実施例に基づいて
詳細に説明する。図１は本発明に係る密着型露光装置の
一実施例を示す要部の断面図である。なお、図中図２と
同一構成部品のものに対しては同一符号を以て示し、そ
の説明を省略する。
詳細に説明する。図１は本発明に係る密着型露光装置の
一実施例を示す要部の断面図である。なお、図中図２と
同一構成部品のものに対しては同一符号を以て示し、そ
の説明を省略する。
【００１０】本実施例は投影光学系にウエハを密着させ
た場合を示すもので、フォトマスク投影光学系の一部を
構成する露光レンズ２とウエハ３との間に介在される純
水等の浸液５に界面活性剤１１を混入したものである。
た場合を示すもので、フォトマスク投影光学系の一部を
構成する露光レンズ２とウエハ３との間に介在される純
水等の浸液５に界面活性剤１１を混入したものである。
【００１１】界面活性剤１１としては、陽イオン性、陰
イオン性、非イオン性等種々のものが使用可能であるが
、屈折率が浸液５と同程度で光の吸収が少なく、またフ
ォトレジスト４を溶かしたりすることのない範囲で混入
されることが望ましい。特に、陽イオン性のうち四級ア
ンモニウム塩系は、濡れ性も高く、レジストへの影響も
少なく、光の吸収も少ないため好ましい。
イオン性、非イオン性等種々のものが使用可能であるが
、屈折率が浸液５と同程度で光の吸収が少なく、またフ
ォトレジスト４を溶かしたりすることのない範囲で混入
されることが望ましい。特に、陽イオン性のうち四級ア
ンモニウム塩系は、濡れ性も高く、レジストへの影響も
少なく、光の吸収も少ないため好ましい。
【００１２】かくしてこのような構成においては界面活
性剤１１が浸液５の表面張力を減らして濡れ性を高める
ため、ウエハ３を所定圧力にて露光レンズ２に圧接した
際、浸液５の膜厚ｄ２ を図２に示した従来装置と比較
して薄くする（ｄ２ ＜ｄ１ ）ことができ、また膜厚
が薄くなれば光の吸収量も少なくなるので、これに比例
して光の吸収ムラが減少し、露光ムラを軽減防止するこ
とができるものである。
性剤１１が浸液５の表面張力を減らして濡れ性を高める
ため、ウエハ３を所定圧力にて露光レンズ２に圧接した
際、浸液５の膜厚ｄ２ を図２に示した従来装置と比較
して薄くする（ｄ２ ＜ｄ１ ）ことができ、また膜厚
が薄くなれば光の吸収量も少なくなるので、これに比例
して光の吸収ムラが減少し、露光ムラを軽減防止するこ
とができるものである。
【００１３】
【発明の効果】以上説明したように本発明に係る密着型
露光装置によれば、浸液に界面活性剤を混入することに
より、浸液自身の表面張力を減らして濡れ性を向上させ
るようにしたので、浸液の膜厚を薄くすることができる
。したがって、浸液の膜厚ムラが小さく、光の吸収を少
なくすることができ、浸液による露光ムラを軽減防止す
ることができる。
露光装置によれば、浸液に界面活性剤を混入することに
より、浸液自身の表面張力を減らして濡れ性を向上させ
るようにしたので、浸液の膜厚を薄くすることができる
。したがって、浸液の膜厚ムラが小さく、光の吸収を少
なくすることができ、浸液による露光ムラを軽減防止す
ることができる。
【図１】本発明に係る密着型露光装置の一実施例を示す
要部の断面図である。
要部の断面図である。
【図２】密着型露光装置の従来例を示す要部の断面図で
ある。
ある。
１ フォトマスク
２ 露光レンズ
３ ウエハ
４ フォトレジスト
５ 浸液
６ 照射光
７ マスク
１１ 界面活性剤
Claims (1)
- 【請求項１】 フォトレジストを塗布されたウエハを
投影光学系もしくはフォトマスクに浸液を介して密着さ
せ、照射光の照射によりフォトマスクのパターンを前記
フォトレジストに転写するようにした密着型露光装置に
おいて、前記浸液は前記フォトレジストに影響を与えな
い範囲で界面活性剤が混入されていることを特徴とする
密着型露光装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3094867A JPH04305915A (ja) | 1991-04-02 | 1991-04-02 | 密着型露光装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3094867A JPH04305915A (ja) | 1991-04-02 | 1991-04-02 | 密着型露光装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04305915A true JPH04305915A (ja) | 1992-10-28 |
Family
ID=14121998
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3094867A Pending JPH04305915A (ja) | 1991-04-02 | 1991-04-02 | 密着型露光装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04305915A (ja) |
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