JP5353862B2 - 露光装置、露光方法及びデバイス製造方法 - Google Patents
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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Description
R=k1・λ/NA … (1)
δ=±k2・λ/NA2 … (2)
すなわち、投影領域AR1を取り囲むように連続的に形成された回収口22Aの内部に仕切部材23が設けられた構成となっている。仕切部材23により分割された分割空間24のそれぞれは上下方向で貫通している。そして、回収部材22のうち、回収口22Aを有する下端部は基板Pの表面に近接され、一方、上端部は複数の分割空間24を空間的に集合する集合空間部であるマニホールド部25となっている。そして、このマニホールド部25に回収管21Aの一端部が接続され、他端部が液体回収部21に接続されている。液体回収機構20は、液体回収部21を駆動することにより、回収口22A(回収部材22)及び回収管21Aを介して基板P上の液体1を回収する。すなわち、回収口22Aの設置位置が基板P上の液体1の回収を行う回収位置であり、液体回収機構20は投影領域AR1から離れた回収位置で基板P上の液体1の回収を行うようになっている。ここで、液体回収機構20の回収口22Aは平面視略円環状であって投影領域AR1を取り囲んだ構成となっている。すなわち、回収口22Aは、矩形の投影領域AR1の4つの側(+X方向側、−X方向側、+Y方向側、−Y方向側)、換言すると投影領域AR1に対して直交する4つの方向に離れた4つの位置に存在している。したがって、液体回収機構20は、投影領域AR1を取り囲むように設けられている回収口22Aより、投影領域AR1に対して異なる複数の方向に離れた複数の位置で基板P上の液体1の回収を同時に行うことができる。
同様に、第2液体供給部12から送出された液体1も第2供給管42及び第2供給部材14を介して基板P上に均一に供給される。
Claims (26)
- 基板を走査方向に移動しながら、前記基板に液体を介してパターン像を投影することによって、前記基板の複数のショット領域のそれぞれを順次露光する走査型露光装置であって:
前記パターン像を前記基板に投影する投影光学系と;
前記投影光学系の先端部を配置可能な貫通穴と、前記基板の表面が対向するように配置され、前記液体を供給するための供給口と、前記基板の表面が対向するように配置され、前記液体を回収するための回収口とが設けられた流路形成部材と、
前記供給口から液体を供給する液体供給機構と;
前記供給口から供給された液体を、前記回収口から、前記投影光学系の投影領域に対して異なる複数の方向に離れた複数の位置で同時に回収する液体回収機構と、を備え、前記供給口からの液体供給と前記回収口からの液体回収とによって前記投影領域を含む前記基板上の一部に形成された液浸領域を介して、前記パターン像が前記基板に投影される露光装置。 - 前記回収口は、前記投影領域を取り囲むように配置されている請求項1記載の露光装置。
- 前記回収口は、前記投影領域を取り囲むように前記流路形成部材に形成された複数の回収穴部を含む請求項1又は2に記載の露光装置。
- 前記流路形成部材は、前記投影領域に対して前記回収口の外側に配置され、前記回収口で回収しきれなかった液体を捕捉するトラップ面を有する請求項1〜3のいずれか一項に記載の露光装置。
- 前記トラップ面は、前記液体との親和性を高める処理が施されている請求項4記載の露光装置。
- 前記トラップ面の液体親和性は、前記基板表面の液体親和性よりも高い請求項5に記載の露光装置。
- 前記トラップ面は水平面に対して傾斜している請求項4〜6のいずれか一項に記載の露光装置。
- 前記トラップ面で捕捉された液体は、前記回収口から回収される請求項4〜7のいずれか一項に記載の露光装置。
- 前記供給口は、前記貫通穴と前記回収口との間に設けられている請求項1〜8のいずれか一項記載の露光装置。
- 前記回収口は、前記供給口を囲むように前記流路形成部材に設けられている請求項1〜9のいずれか一項記載の露光装置。
- 前記供給口は、前記基板の走査方向に関して前記投影領域の両側に設けられている請求項1〜10のいずれか一項記載の露光装置。
- 前記液体回収機構は、前記回収口から前記液体を気体とともに回収する請求項1〜11のいずれか一項記載の露光装置。
- 基板を基板ホルダで保持する基板ステージをさらに備え、
前記基板ステージは、前記基板ホルダに保持された基板を囲むように設けられたプレート部を有する請求項1〜12のいずれか一項記載の露光装置。 - 前記プレート部は、前記基板ホルダに保持された基板の表面とほぼ同じ高さとなる平面を有する請求項13記載の露光装置。
- 前記プレート部は、前記基板ホルダに保持された基板のエッジとの間に隙間が形成されるように設けられている請求項13又は14記載の露光装置。
- 前記隙間は、0.1〜2mmである請求項15記載の露光装置。
- 請求項1〜16のいずれか一項に記載の露光装置を用いるデバイス製造方法。
- 基板を走査方向に移動しながら、投影光学系と液体を介して前記基板にパターン像を投影することによって、前記基板の複数のショット領域のそれぞれを順次露光する走査露光方法であって:
前記投影光学系の先端部を囲むように配置された流路形成部材の供給口から液体を供給することと、
前記供給口から供給された液体を、前記流路形成部材に設けられた回収口から、前記投影光学系の投影領域に対して異なる複数の方向に離れた複数の位置で同時に回収することと、
前記基板の表面が対向するように設けられた前記供給口からの液体供給と前記基板の表面が対向するように設けられた前記回収口からの液体回収とによって前記投影領域を含む前記基板上の一部に形成された液浸領域を介して前記パターン像を前記基板に投影することと、を含む露光方法。 - 前記回収口は、前記投影領域を取り囲むように配置されている請求項18記載の露光方法。
- 前記回収口は、前記供給口を囲むように前記流路形成部材に設けられている請求項18又は19記載の露光方法。
- 前記供給口は、前記基板の走査方向に関して前記投影領域の両側に設けられている請求項18〜20のいずれか一項記載の露光方法。
- 前記回収口から前記液体を気体とともに回収する請求項18〜21のいずれか一項記載の露光方法。
- 前記基板を基板ステージの基板ホルダで保持することをさらに含み、
前記基板ステージは、前記基板ホルダに保持された前記基板を囲むように設けられたプレート部を有する請求項18〜22のいずれか一項記載の露光方法。 - 前記プレート部は、前記基板ホルダに保持された基板の表面とほぼ同じ高さとなる平面を有する請求項23記載の露光方法。
- 前記プレート部は、前記基板ホルダに保持された前記基板のエッジとの間に隙間が形成されるように設けられている請求項23又は24記載の露光方法。
- 前記隙間は、0.1〜2mmである請求項25記載の露光方法。
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KR101484435B1 (ko) | 2003-04-09 | 2015-01-19 | 가부시키가이샤 니콘 | 노광 방법 및 장치, 그리고 디바이스 제조 방법 |
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TWI612557B (zh) * | 2003-05-23 | 2018-01-21 | Nikon Corp | 曝光方法及曝光裝置以及元件製造方法 |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
DE60308161T2 (de) | 2003-06-27 | 2007-08-09 | Asml Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung eines Artikels |
EP1494079B1 (en) * | 2003-06-27 | 2008-01-02 | ASML Netherlands B.V. | Lithographic Apparatus |
JP3862678B2 (ja) * | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US6809794B1 (en) * | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
KR101296501B1 (ko) | 2003-07-09 | 2013-08-13 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
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