JPS58202448A - 露光装置 - Google Patents
露光装置Info
- Publication number
- JPS58202448A JPS58202448A JP57084784A JP8478482A JPS58202448A JP S58202448 A JPS58202448 A JP S58202448A JP 57084784 A JP57084784 A JP 57084784A JP 8478482 A JP8478482 A JP 8478482A JP S58202448 A JPS58202448 A JP S58202448A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- layer
- lens
- liquid layer
- interference fringes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70583—Speckle reduction, e.g. coherence control or amplitude/wavefront splitting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【発明の詳細な説明】
本発明は、半導体集積回路等の製造工程で用いられる無
光装置の改良に関するものである。
光装置の改良に関するものである。
第1の微細パターンの描かれた半導体基板上のパターン
を観察して、相対的な位置合わせ全行なった後、第2の
パターンを投影する半導体露光装置において、観察すべ
き第1のノくターンは凹凸を有する段差状の形状を成し
ており、その段差状のバター゛/の上に感光剤であるホ
トレジスト層か形成されている。しかし、このホトレジ
スト層は、観察すべき第1のノくターンの凹凸に従って
凹凸が生じてその皺布厚さが均一でなくなり、観察光を
照射すると半導体基板からの反射光と半導体基板への入
射光とが相互に干渉して、レジスト膚の膜厚差による干
渉縞が生じ、観察光学上の障害となっている。
を観察して、相対的な位置合わせ全行なった後、第2の
パターンを投影する半導体露光装置において、観察すべ
き第1のノくターンは凹凸を有する段差状の形状を成し
ており、その段差状のバター゛/の上に感光剤であるホ
トレジスト層か形成されている。しかし、このホトレジ
スト層は、観察すべき第1のノくターンの凹凸に従って
凹凸が生じてその皺布厚さが均一でなくなり、観察光を
照射すると半導体基板からの反射光と半導体基板への入
射光とが相互に干渉して、レジスト膚の膜厚差による干
渉縞が生じ、観察光学上の障害となっている。
したがって、本発明の目的は、第1のノくターンを有す
る基板上に形成されたホトレジスト層の膜厚の差によっ
て生じる干渉縞の影響を低減して第1のパターンの位置
を高精度に検出し、第2のノ(ターンを正確に露光する
無光装置を提供することにある。
る基板上に形成されたホトレジスト層の膜厚の差によっ
て生じる干渉縞の影響を低減して第1のパターンの位置
を高精度に検出し、第2のノ(ターンを正確に露光する
無光装置を提供することにある。
上記目的を達成するために本発明に2いては、第1のパ
ターンが設けられ、かつ、その上に感光剤層が形成され
た基板における第1の)くターンをレンズ系を介して検
出し、感光剤層を感光すべき第2のパターンと第1のパ
ターンとの位置合せを行ない、感光剤層を第2のパター
ンでもって感光させる露光装置において、レンズ系と基
板との間に光学的に透明な液体層を介在させ、かつ、レ
ンズ系が光学的に平行で透明な板状部材を介して液体層
と接するようにして露光装置を構成したことを特徴とし
ている。
ターンが設けられ、かつ、その上に感光剤層が形成され
た基板における第1の)くターンをレンズ系を介して検
出し、感光剤層を感光すべき第2のパターンと第1のパ
ターンとの位置合せを行ない、感光剤層を第2のパター
ンでもって感光させる露光装置において、レンズ系と基
板との間に光学的に透明な液体層を介在させ、かつ、レ
ンズ系が光学的に平行で透明な板状部材を介して液体層
と接するようにして露光装置を構成したことを特徴とし
ている。
かかる本発明の特徴的な構成により、ホトレジスト層の
膜厚のムラに起因する干渉縞の影響を抑制することが可
能となるため基板上のパターンの位置を正確に検出でき
る。その結果、高精度な露光が可能な露光装置を提供で
きるようになった。
膜厚のムラに起因する干渉縞の影響を抑制することが可
能となるため基板上のパターンの位置を正確に検出でき
る。その結果、高精度な露光が可能な露光装置を提供で
きるようになった。
以下、本発明全実施例を参照して詳細に説明する。
第1図は本発明による露光装置の基本構成を示したもの
である。露光装置は光源1、コンデンサレンズ2、拡大
パターンの描かれたレティクル3、縮小投影レンズ4と
から構成されており、レティクル3に描かれたパターン
を基板である半導体ウェー−・5上に塗布さnた感光剤
であるホトレジスト層に投影することによってウェーハ
5に所望のパターンを形成するものである。
である。露光装置は光源1、コンデンサレンズ2、拡大
パターンの描かれたレティクル3、縮小投影レンズ4と
から構成されており、レティクル3に描かれたパターン
を基板である半導体ウェー−・5上に塗布さnた感光剤
であるホトレジスト層に投影することによってウェーハ
5に所望のパターンを形成するものである。
一般に、半導体素子は、種々の回路パターンを数回に渡
って、高精度に位置合わせを行ない重ね焼きして行く必
要がある。重ね焼きを行なうためには、前もって形成さ
2′した第1のパターン7の位置を検出光学系8,11
によって検出し、ウェーハ5の乗った移動台9を駆動さ
せ、ウェーハ5を所望の位置に位置決めして、レティク
ル3に形成さ:rした第2のパターンと正確に合わせて
露光する。
って、高精度に位置合わせを行ない重ね焼きして行く必
要がある。重ね焼きを行なうためには、前もって形成さ
2′した第1のパターン7の位置を検出光学系8,11
によって検出し、ウェーハ5の乗った移動台9を駆動さ
せ、ウェーハ5を所望の位置に位置決めして、レティク
ル3に形成さ:rした第2のパターンと正確に合わせて
露光する。
通常、上述の第1のパターン7は凹凸状の段差形状を成
しているため、レティクル3の第2のパターンを露光す
るためのホトレジスト層60表面形状も第一のパターン
7の凹凸にならって図示したように凹凸(膜厚差)10
を失じる。
しているため、レティクル3の第2のパターンを露光す
るためのホトレジスト層60表面形状も第一のパターン
7の凹凸にならって図示したように凹凸(膜厚差)10
を失じる。
第1のパターン7の位置の検出光学系8,11は、縮小
投影レン責4を通して第1のパターン7を検出する。一
般に、露光装置に用いられる高解像力の縮小投影レンズ
は、単波長光用に設計されているため、検出光学系8.
11に使用する光も単波長光を用いることになる。単波
長の光を用いて、透明なホトレジスト層6を通して第1
のノくターン7を検出する際には、ウエーノ・5の表面
からの反射光とつ二一ノ・5への入射光とが互いに干渉
しあって、ホトレジスト層と空気層とのように屈折率の
異なる媒体の接する境界面でホトレジスト層6の膜厚の
差に応じた干渉縞を生じてしまう。
投影レン責4を通して第1のパターン7を検出する。一
般に、露光装置に用いられる高解像力の縮小投影レンズ
は、単波長光用に設計されているため、検出光学系8.
11に使用する光も単波長光を用いることになる。単波
長の光を用いて、透明なホトレジスト層6を通して第1
のノくターン7を検出する際には、ウエーノ・5の表面
からの反射光とつ二一ノ・5への入射光とが互いに干渉
しあって、ホトレジスト層と空気層とのように屈折率の
異なる媒体の接する境界面でホトレジスト層6の膜厚の
差に応じた干渉縞を生じてしまう。
この干渉縞は明暗の線状となるため、第1のノくターン
7の輪郭と区別することが難しくなり、誤検出の原因と
なり、その結果、重ね合せ精度を劣化させる要因となる
ものである。特に、第、1のパターン7の形状と完全に
相似な形状のホトレジスト層6の膜厚差(凹凸)10が
得られる場合には、干渉縞を用いて、第1のパターン7
の位置を検出し、これからパターン位置を類推すること
も可能であるが、現実には、段差を有する第1のパター
ン7と相似な形状のホトレジスト層6の膜厚差(凹凸)
10を得ることは不可能である。
7の輪郭と区別することが難しくなり、誤検出の原因と
なり、その結果、重ね合せ精度を劣化させる要因となる
ものである。特に、第、1のパターン7の形状と完全に
相似な形状のホトレジスト層6の膜厚差(凹凸)10が
得られる場合には、干渉縞を用いて、第1のパターン7
の位置を検出し、これからパターン位置を類推すること
も可能であるが、現実には、段差を有する第1のパター
ン7と相似な形状のホトレジスト層6の膜厚差(凹凸)
10を得ることは不可能である。
そこで、本発明では上述のホトレジスト層6の膜厚差(
凹凸)10による干渉縞の発生を低減して第1のパター
ン7の検出精度を向上させるため次の如く構成したもの
である。干渉縞の発生を低減させるためにはホトレジス
ト曽6の屈折率とほぼ等しい屈折率を有する液体層12
でホトレジスト層6の表面をおおうことによりホトレジ
スト層6の表面と液体層12との接する境界面における
屈折率差が小さくなp1ホトレジスト層6の表面での干
渉縞の発生が低減できる。ところが、静止状態では液体
層120表面は自由表面となるため平坦となるが、露光
装置として用いる場合には、ウェーハ5を乗せた移動台
9が高速にステップ・アンド・リピートするため、液体
層120表面は波打ってしまうという問題が生じる。そ
こで、液体層12の縮小投影レンズ4に対する面を常に
平坦に保つために、本発明では、縮小投影レンズ4の下
端に光学的に平行で透明なガラス板13を設けである。
凹凸)10による干渉縞の発生を低減して第1のパター
ン7の検出精度を向上させるため次の如く構成したもの
である。干渉縞の発生を低減させるためにはホトレジス
ト曽6の屈折率とほぼ等しい屈折率を有する液体層12
でホトレジスト層6の表面をおおうことによりホトレジ
スト層6の表面と液体層12との接する境界面における
屈折率差が小さくなp1ホトレジスト層6の表面での干
渉縞の発生が低減できる。ところが、静止状態では液体
層120表面は自由表面となるため平坦となるが、露光
装置として用いる場合には、ウェーハ5を乗せた移動台
9が高速にステップ・アンド・リピートするため、液体
層120表面は波打ってしまうという問題が生じる。そ
こで、液体層12の縮小投影レンズ4に対する面を常に
平坦に保つために、本発明では、縮小投影レンズ4の下
端に光学的に平行で透明なガラス板13を設けである。
カラス板13は、常に、液体層12と接する状態を保っ
ている。縮小投影レンズ4とガラス板13とはシール材
14で仕切らnている。
ている。縮小投影レンズ4とガラス板13とはシール材
14で仕切らnている。
ここで、レンズ15は縮小投影レンズ4のレンズ糸を構
成するフロントレンズである。カラス板13と液体層1
2との接する境界面でも油接率の差から干渉縞の発生も
あり得るが、液体層12の厚さ全適当に規定することに
より、その境界面を縮小投影レンズ4の焦点深度外の領
域に設定することは容易であるので、ガラス板13の屈
折率は任意にすることが可能である。
成するフロントレンズである。カラス板13と液体層1
2との接する境界面でも油接率の差から干渉縞の発生も
あり得るが、液体層12の厚さ全適当に規定することに
より、その境界面を縮小投影レンズ4の焦点深度外の領
域に設定することは容易であるので、ガラス板13の屈
折率は任意にすることが可能である。
従って、カラス板13は縮小投影レンズ4に最適な屈折
率を有するものが使用できる。なお、ガラス板13と液
体層12とを介した場合の縮小投影レンズ4の焦点位置
合わせは、移動台9を光軸方向に勤かして制御すること
によって遜せられる。
率を有するものが使用できる。なお、ガラス板13と液
体層12とを介した場合の縮小投影レンズ4の焦点位置
合わせは、移動台9を光軸方向に勤かして制御すること
によって遜せられる。
上述のように本発明は、王にホトレジスト層6の表面に
生じる干渉縞の発生を低減させるという効果が得らnる
ものであるが、付随的に以下の利点も得らnるものであ
る。
生じる干渉縞の発生を低減させるという効果が得らnる
ものであるが、付随的に以下の利点も得らnるものであ
る。
用いる液体層12を清浄化した、温度制御した状態のも
のを用いることにより、現在、半導体ツロ+ス上問題と
なっているウェーハ5上への塵埃の付着や、外筒囲の温
度変化の影響を極わめて小きくすることが容易になり、
微細化パターンの形成を要求される半導体プロセスにお
ける歩留りの向上が図れる。
のを用いることにより、現在、半導体ツロ+ス上問題と
なっているウェーハ5上への塵埃の付着や、外筒囲の温
度変化の影響を極わめて小きくすることが容易になり、
微細化パターンの形成を要求される半導体プロセスにお
ける歩留りの向上が図れる。
上述した実施例において使用したホトレジストはS h
i pi ey社のポジティブホトレジストAZ13
50Jであシ、このホトレジスト層厚さ約1μmで塗布
してホトレジスト層6を形成した。
i pi ey社のポジティブホトレジストAZ13
50Jであシ、このホトレジスト層厚さ約1μmで塗布
してホトレジスト層6を形成した。
このホトレジスト層6の光の屈折率は約1.65である
。また、液体層12は光の屈折率が約1.33の水、光
の屈折率が約1.50のベンゼンの2種類を使用した。
。また、液体層12は光の屈折率が約1.33の水、光
の屈折率が約1.50のベンゼンの2種類を使用した。
そして、カラス板13ゆ1常用いられている光学ガラス
であり、その厚さは2.3m+のものを用いた。この光
学ガラスの光の屈折率は約1.5である。
であり、その厚さは2.3m+のものを用いた。この光
学ガラスの光の屈折率は約1.5である。
なお、本発明は、干渉縞等の外乱を防止できるため高分
解能で、かつ、高精度な微細パターンの検査装置として
応用することも可能である。
解能で、かつ、高精度な微細パターンの検査装置として
応用することも可能である。
また、半導体霧光装置における王たる投影光学系とは別
に、第2のレンズ光学系を用いて、ウェーハ上のパター
ンの位置を検出する方式を取る半導体霧光装置において
、第2のレンズ光学系のウェーハに対面した対物レンズ
の下端に、本発明を応用することにより、ウェーハ上に
塗布されたホトレジストの表面の凹凸に起因する干渉縞
による外乱を防いで、検出精度を向上させることができ
る。
に、第2のレンズ光学系を用いて、ウェーハ上のパター
ンの位置を検出する方式を取る半導体霧光装置において
、第2のレンズ光学系のウェーハに対面した対物レンズ
の下端に、本発明を応用することにより、ウェーハ上に
塗布されたホトレジストの表面の凹凸に起因する干渉縞
による外乱を防いで、検出精度を向上させることができ
る。
以上説明したごとく、半導体基板に塗布されたホトレジ
スト層の膜厚のムラによって生じる干渉縞によるウェー
ハ上のパターンの位置を誤検出することを防ぐため、ホ
トレジスト層の屈折率に近い屈折率の液体層でホトレジ
スト層の表面をおおい、かつ、縮小投影レンズの下端に
設けた光学的に平行で透明なカラス板を液体層に接触さ
せた状態で駆動する露光装置の構成とすることにより、
高精度なパターンの重ね合わせが行なえるようになる。
スト層の膜厚のムラによって生じる干渉縞によるウェー
ハ上のパターンの位置を誤検出することを防ぐため、ホ
トレジスト層の屈折率に近い屈折率の液体層でホトレジ
スト層の表面をおおい、かつ、縮小投影レンズの下端に
設けた光学的に平行で透明なカラス板を液体層に接触さ
せた状態で駆動する露光装置の構成とすることにより、
高精度なパターンの重ね合わせが行なえるようになる。
また、清浄化された液体層でホトレジスト層の表面をお
おうtめ、ウェーハ上への防塵対策が容易になる。さら
には、熱容量の大きい液体層を用いることが可能である
ため、外部の温度変化に対するウェーハの変形等も容易
に防ぐことが可能となるなどの付随的な効果も得られる
。
おうtめ、ウェーハ上への防塵対策が容易になる。さら
には、熱容量の大きい液体層を用いることが可能である
ため、外部の温度変化に対するウェーハの変形等も容易
に防ぐことが可能となるなどの付随的な効果も得られる
。
第1図は本発明による露光装置の概略構成図である。
1・・・光源、2・・・コンデンサレンズ、3・・・レ
ティクル、4・・・縮小投影レンズ、5・・・基板(ウ
エーノ・)、6・・・ホトレジスト層、7・・・第1の
パターン、8・・・位置検出光学系、9・・・移動台、
10・・・膜厚差(凹凸)、11・・・ハーフミラ−1
12・・・液体層、13・・・ガラス板、14・・・シ
ール板、15・・・フロン、トレ7′・
、6.−°−″コ、− 代理人 弁理士 薄日オU幸τ;〜、″−・二゛;゛′
:− ¥31 図 第1頁の続き 0発 明 者 保坂純男 国分寺市東恋ケ窪1丁目280番 地株式会社日立製作所中央研究 所内 0発 明 者 寺澤恒男 国分寺市東恋ケ窪1丁目280番 地株式会社日立製作所中央研究 所内
ティクル、4・・・縮小投影レンズ、5・・・基板(ウ
エーノ・)、6・・・ホトレジスト層、7・・・第1の
パターン、8・・・位置検出光学系、9・・・移動台、
10・・・膜厚差(凹凸)、11・・・ハーフミラ−1
12・・・液体層、13・・・ガラス板、14・・・シ
ール板、15・・・フロン、トレ7′・
、6.−°−″コ、− 代理人 弁理士 薄日オU幸τ;〜、″−・二゛;゛′
:− ¥31 図 第1頁の続き 0発 明 者 保坂純男 国分寺市東恋ケ窪1丁目280番 地株式会社日立製作所中央研究 所内 0発 明 者 寺澤恒男 国分寺市東恋ケ窪1丁目280番 地株式会社日立製作所中央研究 所内
Claims (1)
- 1、第1のパターンが設けられ、かつ、その上に感光剤
層が形成された基板における上記第1のパターンをレン
ズ系を介して検出し、上記感光剤層を感光すべき第2の
パターンと上記第1のパターンとの位置合せを行ない、
上記感光剤を上記第2のパターンでもって感光させる露
光装置において、上記レンズ系と上記基板との間に光学
的に透明な液体層を介在させ、かつ、上記レンズ系が光
学的に平行で透明な板状部材を介して上記液体層と接す
る如く構成してなることを特徴とする露光装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57084784A JPS58202448A (ja) | 1982-05-21 | 1982-05-21 | 露光装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57084784A JPS58202448A (ja) | 1982-05-21 | 1982-05-21 | 露光装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58202448A true JPS58202448A (ja) | 1983-11-25 |
Family
ID=13840318
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57084784A Pending JPS58202448A (ja) | 1982-05-21 | 1982-05-21 | 露光装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58202448A (ja) |
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