JPH07220990A - パターン形成方法及びその露光装置 - Google Patents
パターン形成方法及びその露光装置Info
- Publication number
- JPH07220990A JPH07220990A JP813694A JP813694A JPH07220990A JP H07220990 A JPH07220990 A JP H07220990A JP 813694 A JP813694 A JP 813694A JP 813694 A JP813694 A JP 813694A JP H07220990 A JPH07220990 A JP H07220990A
- Authority
- JP
- Japan
- Prior art keywords
- optical system
- projection
- mask
- substrate
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
Abstract
(57)【要約】
【構成】マスクパターン３を反射型レンズ７により基板
５上へ結像させ、基板５の表面と反射型レンズ７の間を
含む露光光学系の光路の全体又は一部を、露光波長にお
ける屈折率が１より大きな液体で満たす。 【効果】簡便に実効的に短波長化したのと同等の解像力
向上効果を得ることができ、光リソグラフィの解像限界
を３０％程度向上し、０.１５μｍ 以下のパターンを形
成することができる。
５上へ結像させ、基板５の表面と反射型レンズ７の間を
含む露光光学系の光路の全体又は一部を、露光波長にお
ける屈折率が１より大きな液体で満たす。 【効果】簡便に実効的に短波長化したのと同等の解像力
向上効果を得ることができ、光リソグラフィの解像限界
を３０％程度向上し、０.１５μｍ 以下のパターンを形
成することができる。
Description
【０００１】
【産業上の利用分野】本発明は、各種固体素子の微細パ
ターンを形成するためのパターン形成方法、及びこれに
用いられる投影露光装置に関する。
ターンを形成するためのパターン形成方法、及びこれに
用いられる投影露光装置に関する。
【０００２】
【従来の技術】ＬＳＩ等の固体素子の集積度及び動作速
度を向上するため、回路パターンの微細化が進んでい
る。現在これらのパターン形成には、量産性と解像性能
に優れた縮小投影露光法が広く用いられている。
度を向上するため、回路パターンの微細化が進んでい
る。現在これらのパターン形成には、量産性と解像性能
に優れた縮小投影露光法が広く用いられている。
【０００３】図２（ｂ）に縮小投影露光法の光学系を模
式的に示す。二次光源面上の有効光源１を発した光は照
明光学系２を介してマスク３に照射され、マスク３上の
パターンにより回折された光は縮小投影レンズ４により
基板５上へ結像される。縮小投影レンズは通常屈折型レ
ンズの組合せからなるものが用いられる。この方法の解
像限界は露光波長に比例し、投影レンズの開口数（Ｎ
Ａ）に反比例するため、高ＮＡ化と短波長化により解像
限界の向上が行われてきた。従来、露光光は、高圧水銀
ランプのｇ線（波長４３６ｎｍ），ｉ線（波長３６５ｎ
ｍ）が用いられてきたが、６４メガビットＤＲＡＭ以降
回路寸法が光の波長より小さくなり、物理的限界に達し
ている。
式的に示す。二次光源面上の有効光源１を発した光は照
明光学系２を介してマスク３に照射され、マスク３上の
パターンにより回折された光は縮小投影レンズ４により
基板５上へ結像される。縮小投影レンズは通常屈折型レ
ンズの組合せからなるものが用いられる。この方法の解
像限界は露光波長に比例し、投影レンズの開口数（Ｎ
Ａ）に反比例するため、高ＮＡ化と短波長化により解像
限界の向上が行われてきた。従来、露光光は、高圧水銀
ランプのｇ線（波長４３６ｎｍ），ｉ線（波長３６５ｎ
ｍ）が用いられてきたが、６４メガビットＤＲＡＭ以降
回路寸法が光の波長より小さくなり、物理的限界に達し
ている。
【０００４】一方、顕微鏡等の光学系の実効的なＮＡを
増大させる方法として、液浸(油浸)法が知られている。
この方法は、レンズの先端と試料の間に空気より大きな
屈折率ｎを有する液体（通常油を用いる）を充填するこ
とにより、実効的に光の波長を１／ｎとして解像度を向
上させる。この方法の、光リソグラフィへの応用は、例
えば、第５３回応用物理学会学術講演会講演予稿集，第
２分冊，第４７２頁（１９９２年）に論じられている。
増大させる方法として、液浸(油浸)法が知られている。
この方法は、レンズの先端と試料の間に空気より大きな
屈折率ｎを有する液体（通常油を用いる）を充填するこ
とにより、実効的に光の波長を１／ｎとして解像度を向
上させる。この方法の、光リソグラフィへの応用は、例
えば、第５３回応用物理学会学術講演会講演予稿集，第
２分冊，第４７２頁（１９９２年）に論じられている。
【０００５】一方、光リソグラフィ用の投影露光装置の
別の形態として、ステップアンドスキャン方式等の反射
型投影光学系を用いる方法が検討されている。この光学
系は波長によらず最大０.７ 程度の大きなＮＡまで実現
可能とされ、将来の露光装置として非常に有望である。
この方式では、一部に屈折型光学素子を使用するものの
色収差補正が可能なため、例えば、キセノン水銀ランプ
の２４５〜２５３ｎｍという比較的広い波長領域で露光
を行う。このため、従来の完全屈折型光学系を用いるエ
キシマレーザステッパの様な精密なレーザ波長スペクト
ルの狭帯域化と絶対波長の安定化を必要とせず、又、多
重干渉効果と定在波効果を低減することができる。又、
露光面積が広いことも実用上の大きな特長となってい
る。
別の形態として、ステップアンドスキャン方式等の反射
型投影光学系を用いる方法が検討されている。この光学
系は波長によらず最大０.７ 程度の大きなＮＡまで実現
可能とされ、将来の露光装置として非常に有望である。
この方式では、一部に屈折型光学素子を使用するものの
色収差補正が可能なため、例えば、キセノン水銀ランプ
の２４５〜２５３ｎｍという比較的広い波長領域で露光
を行う。このため、従来の完全屈折型光学系を用いるエ
キシマレーザステッパの様な精密なレーザ波長スペクト
ルの狭帯域化と絶対波長の安定化を必要とせず、又、多
重干渉効果と定在波効果を低減することができる。又、
露光面積が広いことも実用上の大きな特長となってい
る。
【０００６】ステップアンドスキャン方式の光学系は、
例えば、レジスト材料プロセス技術（技術情報協会，東
京，１９９１年）第１２頁から第１４頁に論じられてい
る。
例えば、レジスト材料プロセス技術（技術情報協会，東
京，１９９１年）第１２頁から第１４頁に論じられてい
る。
【０００７】
【発明が解決しようとする課題】ところで、上記の従来
液浸法で用いられる顕微鏡等の屈折型対物レンズは、レ
ンズ先端と試料の間に所定の屈折率の液体を充填するこ
とを前提として専用に設計されたものである。この事情
は投影露光用レンズの場合も同様であり、液浸対応の投
影レンズは従来レンズとは全く異なる設計をもつ専用レ
ンズとして特別に設計する必要がある。ここで、仮に液
浸用以外の従来型屈折レンズの先端と基板（又は試料）
の間の液体充填領域６（図２（ｂ）斜線部分）に屈折率
ｎの液体を充填したとする。この場合、波長は実効的に
１／ｎになるが、スネルの法則に従いレンズ先端におけ
る屈折角が減少するため、光線の光路は図２（ｂ）の破
線の様に変化して実効的なＮＡが減少する。このため、
必ずしも解像度は向上しない。しかも、ステッパ用レン
ズにおいて要求される広い露光面積を、液浸レンズ特有
の大きなＮＡと両立させるのは極めて困難であるという
問題があった。
液浸法で用いられる顕微鏡等の屈折型対物レンズは、レ
ンズ先端と試料の間に所定の屈折率の液体を充填するこ
とを前提として専用に設計されたものである。この事情
は投影露光用レンズの場合も同様であり、液浸対応の投
影レンズは従来レンズとは全く異なる設計をもつ専用レ
ンズとして特別に設計する必要がある。ここで、仮に液
浸用以外の従来型屈折レンズの先端と基板（又は試料）
の間の液体充填領域６（図２（ｂ）斜線部分）に屈折率
ｎの液体を充填したとする。この場合、波長は実効的に
１／ｎになるが、スネルの法則に従いレンズ先端におけ
る屈折角が減少するため、光線の光路は図２（ｂ）の破
線の様に変化して実効的なＮＡが減少する。このため、
必ずしも解像度は向上しない。しかも、ステッパ用レン
ズにおいて要求される広い露光面積を、液浸レンズ特有
の大きなＮＡと両立させるのは極めて困難であるという
問題があった。
【０００８】一方、光リソグラフィの解像度をさらに向
上するには、露光波長をできるだけ短くすることが好ま
しい。しかし、従来型屈折光学系による露光法，反射型
投影露光法のいずれも、光学材料の透過率の限界からＡ
ｒＦエキシマレーザ（波長１９３ｎｍ）が実用的な短波
長化の限界となってしまうという問題があった。
上するには、露光波長をできるだけ短くすることが好ま
しい。しかし、従来型屈折光学系による露光法，反射型
投影露光法のいずれも、光学材料の透過率の限界からＡ
ｒＦエキシマレーザ（波長１９３ｎｍ）が実用的な短波
長化の限界となってしまうという問題があった。
【０００９】本発明の目的は、従来型の露光装置の構成
と光学系を大きく変更することなく、簡便に実効的に短
波長化したのと同等の解像力向上効果を得て、広い露光
領域を確保しつつ投影露光法の解像度を極限まで向上す
ることが可能なパターン形成方法を提供することにあ
る。
と光学系を大きく変更することなく、簡便に実効的に短
波長化したのと同等の解像力向上効果を得て、広い露光
領域を確保しつつ投影露光法の解像度を極限まで向上す
ることが可能なパターン形成方法を提供することにあ
る。
【００１０】
【課題を解決するための手段】上記目的を達成するた
め、本発明は、光源を発した光を照明光学系を介してマ
スクに照射し、上記マスク上のパターンを投影光学系に
より基板上へ結像させることにより上記基板上にパター
ンを形成する方法において、上記投影光学系を反射型レ
ンズを含む光学系により構成し、少なくとも上記基板と
上記投影光学系の間を含む上記投影光学系の光路の全体
又は一部を、上記光の波長における空気に対する比屈折
率が１より大きな媒質で満たす。
め、本発明は、光源を発した光を照明光学系を介してマ
スクに照射し、上記マスク上のパターンを投影光学系に
より基板上へ結像させることにより上記基板上にパター
ンを形成する方法において、上記投影光学系を反射型レ
ンズを含む光学系により構成し、少なくとも上記基板と
上記投影光学系の間を含む上記投影光学系の光路の全体
又は一部を、上記光の波長における空気に対する比屈折
率が１より大きな媒質で満たす。
【００１１】
【作用】図２（ａ）に示す反射光学系の光路全体を満た
す媒質の屈折率を変化させることを考える。図２（ａ）
は、図２（ｂ）における屈折型縮小投影レンズ４を反射
型縮小投影レンズ７に置き換えたものである。図２
（ａ）において、媒質の屈折率が小さい場合の光線の光
路と大きい場合の光線の光路を各々実線と点線で示し
た。反射光学系中の光路は、反射の法則に従い反射レン
ズの表面形状のみによって決まり、媒質の屈折率によら
ない。従って、媒質の屈折率を変化させても、開口数等
の光学系の幾何光学的な性質は何ら変化しない。一方、
媒質として真空に対する比屈折率ｎの物質を用いると、
波長は実効的に１／ｎとなる。この結果、実質的に波長
だけが短くなったのと等しい効果が得られる。なお、図
２（ａ）では簡単のため完全な反射光学系を仮定して説
明したが、部分的には屈折光学系を用いもよい。
す媒質の屈折率を変化させることを考える。図２（ａ）
は、図２（ｂ）における屈折型縮小投影レンズ４を反射
型縮小投影レンズ７に置き換えたものである。図２
（ａ）において、媒質の屈折率が小さい場合の光線の光
路と大きい場合の光線の光路を各々実線と点線で示し
た。反射光学系中の光路は、反射の法則に従い反射レン
ズの表面形状のみによって決まり、媒質の屈折率によら
ない。従って、媒質の屈折率を変化させても、開口数等
の光学系の幾何光学的な性質は何ら変化しない。一方、
媒質として真空に対する比屈折率ｎの物質を用いると、
波長は実効的に１／ｎとなる。この結果、実質的に波長
だけが短くなったのと等しい効果が得られる。なお、図
２（ａ）では簡単のため完全な反射光学系を仮定して説
明したが、部分的には屈折光学系を用いもよい。
【００１２】また媒質は、露光波長に対する屈折率がで
きるだけ大きいことが望ましく、十分な解像度効果を得
るために、１.２ 以上であることが望ましい。又、露光
波長に対して実質的に透明で、かつ、光学素子及びレジ
ストに悪影響を与えないことが望ましい。具体的には、
例えば、水、又はアルコール，直鎖炭化水素等の有機溶
媒，シリコーン樹脂、更に無機化合物又は有機化合物を
これらに溶解した液体、又、従来液浸顕微鏡や液浸屈折
率測定法等において使用されている各種液体等を用いる
ことができる。
きるだけ大きいことが望ましく、十分な解像度効果を得
るために、１.２ 以上であることが望ましい。又、露光
波長に対して実質的に透明で、かつ、光学素子及びレジ
ストに悪影響を与えないことが望ましい。具体的には、
例えば、水、又はアルコール，直鎖炭化水素等の有機溶
媒，シリコーン樹脂、更に無機化合物又は有機化合物を
これらに溶解した液体、又、従来液浸顕微鏡や液浸屈折
率測定法等において使用されている各種液体等を用いる
ことができる。
【００１３】なお、光学系中で媒質の温度や密度等のゆ
らぎにより屈折率が変化すると、光学系の結像特性に悪
影響を及ぼす恐れがあるため、これら温度等は注意深く
制御することが望ましい。特に、走査光学系では光学系
に対して基板を走査するので、媒質の流れにより結像特
性が変化しないように気を付けることが好ましい。
らぎにより屈折率が変化すると、光学系の結像特性に悪
影響を及ぼす恐れがあるため、これら温度等は注意深く
制御することが望ましい。特に、走査光学系では光学系
に対して基板を走査するので、媒質の流れにより結像特
性が変化しないように気を付けることが好ましい。
【００１４】
（実施例１）本発明の一実施例による反射型投影露光装
置を図１に示す。ＫｒＦエキシマレーザ１１から発生し
たレーザ光１２を、ビーム整形光学系１３及び照明光学
系２を介してマスク３に照射する。マスクを通過した光
は反射型縮小投影レンズ７を介して基板５を露光する。
反射型縮小レンズは開口数０.３ のシュバルツシュルド
型光学系で、マスク３を基板５上に結像させる。但し、
図中の光学系はあくまで模式的なものであり、実際の光
学系の構成を忠実に示したものではない。ここで、照明
光学系の射出側からマスクを経て基板に至る光学系の全
体を液体容器１４の内部に設置し、液体容器中に水を満
たして光路を水で充填した。
置を図１に示す。ＫｒＦエキシマレーザ１１から発生し
たレーザ光１２を、ビーム整形光学系１３及び照明光学
系２を介してマスク３に照射する。マスクを通過した光
は反射型縮小投影レンズ７を介して基板５を露光する。
反射型縮小レンズは開口数０.３ のシュバルツシュルド
型光学系で、マスク３を基板５上に結像させる。但し、
図中の光学系はあくまで模式的なものであり、実際の光
学系の構成を忠実に示したものではない。ここで、照明
光学系の射出側からマスクを経て基板に至る光学系の全
体を液体容器１４の内部に設置し、液体容器中に水を満
たして光路を水で充填した。
【００１５】次に、投影露光装置を用いて、Ｓｉ基板上
に塗布したポジ型レジスト膜(PMMA,膜厚１μｍ）に様々
な寸法のパターンを転写した結果、０.３５μｍＬ／Ｓ
パターンを形成できた。比較のため、光学系から水を除
去し空気中で露光を行ったところ解像限界は０.５μｍ
に後退した。
に塗布したポジ型レジスト膜(PMMA,膜厚１μｍ）に様々
な寸法のパターンを転写した結果、０.３５μｍＬ／Ｓ
パターンを形成できた。比較のため、光学系から水を除
去し空気中で露光を行ったところ解像限界は０.５μｍ
に後退した。
【００１６】なお、露光装置の波長，光源の種類，投影
レンズの方式及び開口数，媒体の種類，使用するレジス
トプロセス，マスクパタン寸法等、本実施例に示したも
のに限定しない。例えば、エキシマレーザの代わりに、
高圧水銀ランプやキセノン水銀ランプを用いてもよい。
又、液体溶液中に水に代えて、パーフルオロアルキルポ
リエーテル等を用いてもよい。この液体は、露光波長に
透明であるとともにレジストの感光特性に全く影響を与
えなかった。又、レジストとしても、ＰＭＭＡに代えて
適当なノボラック系ポジ型レジストや化学増幅系レジス
ト等を用いてもよい。
レンズの方式及び開口数，媒体の種類，使用するレジス
トプロセス，マスクパタン寸法等、本実施例に示したも
のに限定しない。例えば、エキシマレーザの代わりに、
高圧水銀ランプやキセノン水銀ランプを用いてもよい。
又、液体溶液中に水に代えて、パーフルオロアルキルポ
リエーテル等を用いてもよい。この液体は、露光波長に
透明であるとともにレジストの感光特性に全く影響を与
えなかった。又、レジストとしても、ＰＭＭＡに代えて
適当なノボラック系ポジ型レジストや化学増幅系レジス
ト等を用いてもよい。
【００１７】（実施例２）本発明の第二の実施例による
反射型投影露光装置を図３に示す。ＡｒＦエキシマレー
ザ（図示せず）から発生したレーザ光を、ビーム整形光
学系及び照明光学系（図示せず）を介してマスク３に照
射する。マスクを通過した光は走査型反射光学系２１を
介して基板５を露光する。走査型反射光学系は開口数
０.７ のステップアンドスキャン型光学系で、マスク３
を基板５上に結像させる。但し、図中の光学系はあくま
で模式的なものであり、実際の光学系の構成を忠実に示
したものではない。ここで、投影光学系の光路内の図中
斜線で示した領域２２に水を充填した。
反射型投影露光装置を図３に示す。ＡｒＦエキシマレー
ザ（図示せず）から発生したレーザ光を、ビーム整形光
学系及び照明光学系（図示せず）を介してマスク３に照
射する。マスクを通過した光は走査型反射光学系２１を
介して基板５を露光する。走査型反射光学系は開口数
０.７ のステップアンドスキャン型光学系で、マスク３
を基板５上に結像させる。但し、図中の光学系はあくま
で模式的なものであり、実際の光学系の構成を忠実に示
したものではない。ここで、投影光学系の光路内の図中
斜線で示した領域２２に水を充填した。
【００１８】次に、投影露光装置を用いて、Ｓｉ基板上
に塗布したポジ型レジスト膜(PMMA,膜厚１μｍ）に、様
々な寸法のパターンを転写した結果、０.１１μｍＬ／
Ｓ パターンを形成できた。比較のため、光学系から水
を除去し空気中で露光を行ったところ、解像限界は０.
１５μｍ に後退し、本発明の効果が確認された。
に塗布したポジ型レジスト膜(PMMA,膜厚１μｍ）に、様
々な寸法のパターンを転写した結果、０.１１μｍＬ／
Ｓ パターンを形成できた。比較のため、光学系から水
を除去し空気中で露光を行ったところ、解像限界は０.
１５μｍ に後退し、本発明の効果が確認された。
【００１９】（実施例３）実施例２の投影露光装置にお
いて、図４に示す様に光学系側と基板側とを石英の平行
平板３１により分割した。これにより、基板を光学系に
対して走査したりステップ送りしたときに生じる液体媒
質の流れが光学系側に及ぶことがないため、屈折率の揺
らぎ等の影響が抑えられてパターンの寸法精度が向上し
た。なお、石英窓挿入により発生する球面収差に対して
は、あらかじめ補正を行った。
いて、図４に示す様に光学系側と基板側とを石英の平行
平板３１により分割した。これにより、基板を光学系に
対して走査したりステップ送りしたときに生じる液体媒
質の流れが光学系側に及ぶことがないため、屈折率の揺
らぎ等の影響が抑えられてパターンの寸法精度が向上し
た。なお、石英窓挿入により発生する球面収差に対して
は、あらかじめ補正を行った。
【００２０】（実施例４）実施例２の投影露光装置にお
いて、図５に示す様に光学系と基板の間に石英平行平板
３２，３３を設け、液体容器を光学系側液体容器３４と
基板側液体容器３５に分割した。更に基板５の光学系に
対する走査又はステップ送りを、基板側液体容器３５ご
と行うようにした。これにより、基板近傍での液体の流
れも抑制することができるため、屈折率の揺らぎ等の影
響が抑えられてパターンの寸法精度が更に向上した。
いて、図５に示す様に光学系と基板の間に石英平行平板
３２，３３を設け、液体容器を光学系側液体容器３４と
基板側液体容器３５に分割した。更に基板５の光学系に
対する走査又はステップ送りを、基板側液体容器３５ご
と行うようにした。これにより、基板近傍での液体の流
れも抑制することができるため、屈折率の揺らぎ等の影
響が抑えられてパターンの寸法精度が更に向上した。
【００２１】なお、本実施例による構成を実施例１に適
用する場合、マスク側にも同様の機構を設けることがで
きる。
用する場合、マスク側にも同様の機構を設けることがで
きる。
【００２２】
【発明の効果】本発明によれば、マスクパターンを投影
光学系により基板上へ結像させることにより上記基板上
にパターンを転写する際、投影光学系を反射型レンズを
含む光学系により構成するとともに、基板表面と投影光
学系の間を含む投影光学系の光路の全体又は一部を、光
の波長における空気に対する比屈折率が１より大きな媒
質で満たすことにより、従来型の露光装置の構成と光学
系を大きく変更することなく、簡便に実効的に短波長化
したのと同等の解像力向上を図ることができる。これに
より、光リソグラフィの解像限界を３０％程度向上し、
０.１５μｍ 以下のパターンを形成することが可能とな
る。
光学系により基板上へ結像させることにより上記基板上
にパターンを転写する際、投影光学系を反射型レンズを
含む光学系により構成するとともに、基板表面と投影光
学系の間を含む投影光学系の光路の全体又は一部を、光
の波長における空気に対する比屈折率が１より大きな媒
質で満たすことにより、従来型の露光装置の構成と光学
系を大きく変更することなく、簡便に実効的に短波長化
したのと同等の解像力向上を図ることができる。これに
より、光リソグラフィの解像限界を３０％程度向上し、
０.１５μｍ 以下のパターンを形成することが可能とな
る。
【図１】本発明の原理の説明図。
【図２】本発明の一実施例による露光装置の説明図。
【図３】本発明の第二の実施例による露光装置の説明
図。
図。
【図４】本発明の第三の実施例による露光装置の説明
図。
図。
【図５】本発明の第四の実施例による露光装置の説明
図。
図。
２…照明光学系、３…マスク、５…基板、７…反射型縮
小投影レンズ、１１…エキシマレーザ、１２…レーザ
光、１３…ビーム整形光学系、１４…液体容器。
小投影レンズ、１１…エキシマレーザ、１２…レーザ
光、１３…ビーム整形光学系、１４…液体容器。
Claims (5)
- 【請求項１】光源を発した光を照明光学系を介してマス
クに照射し、上記マスク上のパターンを投影光学系によ
り基板上へ結像させることにより上記基板上にパターン
を形成する方法において、上記投影光学系を反射型レン
ズを含む光学系により構成し、少なくとも上記基板と上
記投影光学系の間を含む上記投影光学系の光路の全体又
は一部を、上記光の波長における空気に対する比屈折率
が１より大きな媒質で満たすことを特徴とするパターン
形成方法。 - 【請求項２】請求項１において、上記媒質は液体である
パターン形成方法。 - 【請求項３】請求項２において、上記光の波長は１５０
〜２５０ｎｍであるパターン形成方法。 - 【請求項４】光源を発した光を照明光学系を介してマス
クに照射し、上記マスク上のパターンを投影光学系によ
り基板上へ結像させることにより上記基板上にパターン
を形成する際に用いられる露光装置において、上記投影
光学系を反射型レンズを含む光学系により構成し、上記
基板と上記投影光学系の間を含む上記投影光学系の光路
の全体又は一部を、上記光の波長における空気に対する
比屈折率が１より大きな媒質で満たしたことを特徴とす
る投影露光装置。 - 【請求項５】請求項４において、上記投影光学系と前記
基板の間に、透明な隔壁を設け、上記媒質を光学系側と
基板側に分割する投影露光装置。
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP813694A JPH07220990A (ja) | 1994-01-28 | 1994-01-28 | パターン形成方法及びその露光装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP813694A JPH07220990A (ja) | 1994-01-28 | 1994-01-28 | パターン形成方法及びその露光装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07220990A true JPH07220990A (ja) | 1995-08-18 |
Family
ID=11684883
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP813694A Pending JPH07220990A (ja) | 1994-01-28 | 1994-01-28 | パターン形成方法及びその露光装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07220990A (ja) |
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