DE602005019689D1 - Belichtungsvorrichtung und messeinrichtung für eine projektionslinse - Google Patents
Belichtungsvorrichtung und messeinrichtung für eine projektionslinseInfo
- Publication number
- DE602005019689D1 DE602005019689D1 DE602005019689T DE602005019689T DE602005019689D1 DE 602005019689 D1 DE602005019689 D1 DE 602005019689D1 DE 602005019689 T DE602005019689 T DE 602005019689T DE 602005019689 T DE602005019689 T DE 602005019689T DE 602005019689 D1 DE602005019689 D1 DE 602005019689D1
- Authority
- DE
- Germany
- Prior art keywords
- immersion liquid
- immersion
- projection
- apparatus includes
- exposure apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Computer Networks & Wireless Communication (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Eye Examination Apparatus (AREA)
- Video Image Reproduction Devices For Color Tv Systems (AREA)
- Indication In Cameras, And Counting Of Exposures (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US53778404P | 2004-01-20 | 2004-01-20 | |
PCT/EP2005/000246 WO2005071491A2 (en) | 2004-01-20 | 2005-01-13 | Exposure apparatus and measuring device for a projection lens |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602005019689D1 true DE602005019689D1 (de) | 2010-04-15 |
Family
ID=34807120
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005019689T Active DE602005019689D1 (de) | 2004-01-20 | 2005-01-13 | Belichtungsvorrichtung und messeinrichtung für eine projektionslinse |
Country Status (9)
Country | Link |
---|---|
US (5) | US20070070316A1 (de) |
EP (1) | EP1706793B1 (de) |
JP (3) | JP4843503B2 (de) |
KR (2) | KR101204157B1 (de) |
CN (1) | CN1938646B (de) |
AT (1) | ATE459898T1 (de) |
DE (1) | DE602005019689D1 (de) |
TW (1) | TW200525309A (de) |
WO (1) | WO2005071491A2 (de) |
Families Citing this family (103)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG121819A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG2010050110A (en) | 2002-11-12 | 2014-06-27 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
KR101562447B1 (ko) | 2003-02-26 | 2015-10-21 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
KR20050110033A (ko) | 2003-03-25 | 2005-11-22 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
KR101176817B1 (ko) | 2003-04-07 | 2012-08-24 | 가부시키가이샤 니콘 | 노광장치 및 디바이스 제조방법 |
KR20110104084A (ko) | 2003-04-09 | 2011-09-21 | 가부시키가이샤 니콘 | 액침 리소그래피 유체 제어 시스템 |
KR101506431B1 (ko) | 2003-04-10 | 2015-03-26 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템 |
EP1611482B1 (de) | 2003-04-10 | 2015-06-03 | Nikon Corporation | Flüssigkeitsabfluss für verwendung in einer immersionslithographievorrichtung |
EP3352015A1 (de) | 2003-04-10 | 2018-07-25 | Nikon Corporation | Umweltsystem mit einer transportregion für eine immersionslithographievorrichtung |
KR20180054929A (ko) | 2003-04-11 | 2018-05-24 | 가부시키가이샤 니콘 | 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법 |
WO2004092830A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
EP2161620A1 (de) | 2003-04-11 | 2010-03-10 | Nikon Corporation | Reinigungsverfahren für Optik in Immersionslithographie |
WO2004095135A2 (en) | 2003-04-17 | 2004-11-04 | Nikon Corporation | Optical arrangement of autofocus elements for use with immersion lithography |
TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
TW201415536A (zh) | 2003-05-23 | 2014-04-16 | 尼康股份有限公司 | 曝光方法及曝光裝置以及元件製造方法 |
TWI616932B (zh) | 2003-05-23 | 2018-03-01 | Nikon Corp | Exposure device and component manufacturing method |
KR20110110320A (ko) | 2003-05-28 | 2011-10-06 | 가부시키가이샤 니콘 | 노광 방법, 노광 장치, 및 디바이스 제조 방법 |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2261741A3 (de) | 2003-06-11 | 2011-05-25 | ASML Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
KR101242815B1 (ko) | 2003-06-13 | 2013-03-12 | 가부시키가이샤 니콘 | 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조방법 |
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DE102006021797A1 (de) * | 2006-05-09 | 2007-11-15 | Carl Zeiss Smt Ag | Optische Abbildungseinrichtung mit thermischer Dämpfung |
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Publication number | Publication date |
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EP1706793A2 (de) | 2006-10-04 |
JP2007519238A (ja) | 2007-07-12 |
US9436095B2 (en) | 2016-09-06 |
US10345710B2 (en) | 2019-07-09 |
JP5992066B2 (ja) | 2016-09-14 |
KR101204157B1 (ko) | 2012-11-22 |
US20130120723A1 (en) | 2013-05-16 |
EP1706793B1 (de) | 2010-03-03 |
JP2015135524A (ja) | 2015-07-27 |
CN1938646B (zh) | 2010-12-15 |
WO2005071491A2 (en) | 2005-08-04 |
CN1938646A (zh) | 2007-03-28 |
US8330935B2 (en) | 2012-12-11 |
JP5898853B2 (ja) | 2016-04-06 |
ATE459898T1 (de) | 2010-03-15 |
JP2011166165A (ja) | 2011-08-25 |
KR20100049652A (ko) | 2010-05-12 |
US20100141912A1 (en) | 2010-06-10 |
US20170082930A1 (en) | 2017-03-23 |
US20080309894A1 (en) | 2008-12-18 |
TW200525309A (en) | 2005-08-01 |
KR101135232B1 (ko) | 2012-04-12 |
KR20100046263A (ko) | 2010-05-06 |
JP4843503B2 (ja) | 2011-12-21 |
US20070070316A1 (en) | 2007-03-29 |
WO2005071491A3 (en) | 2006-05-26 |
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