JP4843503B2 - マイクロリソグラフィ投影露光装置および投影レンズのための測定装置 - Google Patents
マイクロリソグラフィ投影露光装置および投影レンズのための測定装置 Download PDFInfo
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- JP4843503B2 JP4843503B2 JP2006548258A JP2006548258A JP4843503B2 JP 4843503 B2 JP4843503 B2 JP 4843503B2 JP 2006548258 A JP2006548258 A JP 2006548258A JP 2006548258 A JP2006548258 A JP 2006548258A JP 4843503 B2 JP4843503 B2 JP 4843503B2
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- Prior art keywords
- immersion liquid
- heat transfer
- immersion
- transfer element
- projection
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Description
Claims (9)
- マイクロリソグラフィ投影露光装置であって、
投影光(13)を生成する照明システム(12)と、
感光層(26)上にマスク(24)を結像させる、複数の光学素子(L1〜L5;54)を含む投影レンズ(20)と、
液浸液(34)で満たされる液浸空間(44)と
を備え、
液浸空間(44)の区域における温度を選択的に変えるための伝熱要素(503)を設け、
前記伝熱要素(503)は、前記伝熱要素(503)と前記区域との間で熱放射によって熱が交換されるように、前記液浸空間(44)からある距離で配置され、
前記伝熱要素(503)と前記液浸空間(44)との間に配置されて、前記熱放射の方向を変化させる方向性光学素子(66)を設けたことを特徴とするマイクロリソグラフィ投影露光装置。 - 前記伝熱要素はペルチェ素子(503)であることを特徴とする請求項1に記載の投影露光装置。
- 前記方向性光学素子(66)は正の屈折力を有することを特徴とする請求項1または2に記載の投影露光装置。
- 前記伝熱要素は加熱または冷却される平面放熱器(503)であることを特徴とする請求項1〜3のいずれか1項に記載の投影露光装置。
- 前記伝熱要素(503)の温度を測定する熱センサ(65)を設けたことを特徴とする請求項1〜4のいずれか1項に記載の投影露光装置。
- 前記熱センサ(65)は前記伝熱要素の加熱または冷却出力を調整する制御装置に接続されていることを特徴とする請求項5に記載の投影露光装置。
- マイクロリソグラフィ投影露光装置(10)のための投影レンズ(20)を製造する方法であって、
a)複数の光学素子から前記投影レンズを組み立てるステップと、
b)前記投影レンズ(20)の像側に配置される試験光学部品(140;140’)を含む測定装置に前記投影レンズを取り付けるステップと、
c)液浸空間(44)に液浸液(34)を導入するステップと、
d)伝熱要素(503)によって前記液浸空間(44)の区域における前記液浸液(34)の温度を選択的に変化させ、ここで、前記伝熱要素(503)は、前記伝熱要素(503)と前記区域との間で熱放射によって熱が交換されるように、前記液浸空間(44)からある距離で配置され、前記熱放射の方向は、前記伝熱要素(503)と前記液浸空間(44)との間に配置された方向性光学素子(66)によって変化させられるステップと、
e)前記投影レンズ(20)の結像特性を決定するステップと、
f)前記投影レンズ(20)の少なくとも1個の前記光学素子の位置を調整するステップと
を含む方法。 - 微細構造化構成部品のマイクロリソグラフィ製造のための方法であって、
a)投影レンズ(20)を設けるステップと、
b)前記投影レンズ(20)の物体平面(22)にマスク(24)を配置するステップと、
c)液浸空間(44)に液浸液(34)を導入するステップと、
d)伝熱要素(503)によって前記液浸空間(44)の区域における前記液浸液(34)の温度を選択的に変化させ、ここで、前記伝熱要素(503)は、前記伝熱要素(503)と前記区域との間で熱放射によって熱が交換されるように、前記液浸空間(44)からある距離で配置され、前記熱放射の方向は、前記伝熱要素(503)と前記液浸空間(44)との間に配置された方向性光学素子(66)によって変化させられるステップと、
e)前記マスク(24)を感光層(26)上に投影するステップと
を含む方法。 - 前記液浸液(34)は、上記請求項8のe)に記載のいかなる投影も行われない時間間隔の間にのみポンプによって前記液浸空間において循環させられることを特徴とする請求項8に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US53778404P | 2004-01-20 | 2004-01-20 | |
US60/537,784 | 2004-01-20 | ||
PCT/EP2005/000246 WO2005071491A2 (en) | 2004-01-20 | 2005-01-13 | Exposure apparatus and measuring device for a projection lens |
Related Child Applications (1)
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JP2011096982A Division JP5898853B2 (ja) | 2004-01-20 | 2011-04-25 | マイクロリソグラフィ投影露光装置および投影レンズのための測定装置 |
Publications (2)
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JP2007519238A JP2007519238A (ja) | 2007-07-12 |
JP4843503B2 true JP4843503B2 (ja) | 2011-12-21 |
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JP2006548258A Expired - Fee Related JP4843503B2 (ja) | 2004-01-20 | 2005-01-13 | マイクロリソグラフィ投影露光装置および投影レンズのための測定装置 |
JP2011096982A Expired - Fee Related JP5898853B2 (ja) | 2004-01-20 | 2011-04-25 | マイクロリソグラフィ投影露光装置および投影レンズのための測定装置 |
JP2015082177A Expired - Fee Related JP5992066B2 (ja) | 2004-01-20 | 2015-04-14 | マイクロリソグラフィ投影露光装置および投影レンズのための測定装置 |
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JP2011096982A Expired - Fee Related JP5898853B2 (ja) | 2004-01-20 | 2011-04-25 | マイクロリソグラフィ投影露光装置および投影レンズのための測定装置 |
JP2015082177A Expired - Fee Related JP5992066B2 (ja) | 2004-01-20 | 2015-04-14 | マイクロリソグラフィ投影露光装置および投影レンズのための測定装置 |
Country Status (9)
Country | Link |
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US (5) | US20070070316A1 (ja) |
EP (1) | EP1706793B1 (ja) |
JP (3) | JP4843503B2 (ja) |
KR (2) | KR101204157B1 (ja) |
CN (1) | CN1938646B (ja) |
AT (1) | ATE459898T1 (ja) |
DE (1) | DE602005019689D1 (ja) |
TW (1) | TW200525309A (ja) |
WO (1) | WO2005071491A2 (ja) |
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EP1706793A2 (en) | 2006-10-04 |
TW200525309A (en) | 2005-08-01 |
CN1938646A (zh) | 2007-03-28 |
JP5898853B2 (ja) | 2016-04-06 |
KR20100049652A (ko) | 2010-05-12 |
KR101204157B1 (ko) | 2012-11-22 |
CN1938646B (zh) | 2010-12-15 |
US20130120723A1 (en) | 2013-05-16 |
US8330935B2 (en) | 2012-12-11 |
KR20100046263A (ko) | 2010-05-06 |
EP1706793B1 (en) | 2010-03-03 |
JP2015135524A (ja) | 2015-07-27 |
US20070070316A1 (en) | 2007-03-29 |
US10345710B2 (en) | 2019-07-09 |
US20100141912A1 (en) | 2010-06-10 |
JP2007519238A (ja) | 2007-07-12 |
US20170082930A1 (en) | 2017-03-23 |
JP2011166165A (ja) | 2011-08-25 |
DE602005019689D1 (de) | 2010-04-15 |
JP5992066B2 (ja) | 2016-09-14 |
ATE459898T1 (de) | 2010-03-15 |
WO2005071491A3 (en) | 2006-05-26 |
WO2005071491A2 (en) | 2005-08-04 |
US20080309894A1 (en) | 2008-12-18 |
US9436095B2 (en) | 2016-09-06 |
KR101135232B1 (ko) | 2012-04-12 |
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