DE602004030365D1 - Belichtungsvorrichtung, belichtungsverfahren und verfahren zur bauelementeherstellung - Google Patents

Belichtungsvorrichtung, belichtungsverfahren und verfahren zur bauelementeherstellung

Info

Publication number
DE602004030365D1
DE602004030365D1 DE602004030365T DE602004030365T DE602004030365D1 DE 602004030365 D1 DE602004030365 D1 DE 602004030365D1 DE 602004030365 T DE602004030365 T DE 602004030365T DE 602004030365 T DE602004030365 T DE 602004030365T DE 602004030365 D1 DE602004030365 D1 DE 602004030365D1
Authority
DE
Germany
Prior art keywords
liquid
flow path
supplying
substrate
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004030365T
Other languages
English (en)
Inventor
Yoshitomo Nagahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Nippon Kogaku KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp, Nippon Kogaku KK filed Critical Nikon Corp
Publication of DE602004030365D1 publication Critical patent/DE602004030365D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Prostheses (AREA)
DE602004030365T 2003-10-22 2004-10-21 Belichtungsvorrichtung, belichtungsverfahren und verfahren zur bauelementeherstellung Active DE602004030365D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003362279 2003-10-22
PCT/JP2004/015619 WO2005038888A1 (ja) 2003-10-22 2004-10-21 露光装置、露光方法、デバイスの製造方法

Publications (1)

Publication Number Publication Date
DE602004030365D1 true DE602004030365D1 (de) 2011-01-13

Family

ID=34463503

Family Applications (2)

Application Number Title Priority Date Filing Date
DE602004030838T Active DE602004030838D1 (de) 2003-10-22 2004-10-21 Belichtungsvorrichtung, Belichtungsverfahren und Verfahren zur Herstellung einer Vorrichtung
DE602004030365T Active DE602004030365D1 (de) 2003-10-22 2004-10-21 Belichtungsvorrichtung, belichtungsverfahren und verfahren zur bauelementeherstellung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE602004030838T Active DE602004030838D1 (de) 2003-10-22 2004-10-21 Belichtungsvorrichtung, Belichtungsverfahren und Verfahren zur Herstellung einer Vorrichtung

Country Status (7)

Country Link
US (7) US7643129B2 (de)
EP (2) EP1677341B1 (de)
JP (1) JP4325623B2 (de)
KR (8) KR20060071430A (de)
AT (2) ATE493754T1 (de)
DE (2) DE602004030838D1 (de)
WO (1) WO2005038888A1 (de)

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JP4843503B2 (ja) 2004-01-20 2011-12-21 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置および投影レンズのための測定装置
KR101942136B1 (ko) 2004-02-04 2019-01-24 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
US8368870B2 (en) * 2004-06-21 2013-02-05 Nikon Corporation Exposure apparatus and device manufacturing method
JP4072543B2 (ja) 2005-03-18 2008-04-09 キヤノン株式会社 液浸露光装置及びデバイス製造方法
JP4872916B2 (ja) * 2005-04-18 2012-02-08 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
JP4661322B2 (ja) * 2005-04-22 2011-03-30 株式会社ニコン 露光装置、デバイスの製造方法及び液体供給方法
US7652746B2 (en) * 2005-06-21 2010-01-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2007023813A1 (ja) * 2005-08-23 2007-03-01 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
JP2007286162A (ja) * 2006-04-13 2007-11-01 Nikon Corp 液浸顕微鏡装置
DE102006021797A1 (de) 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung
US8681308B2 (en) * 2007-09-13 2014-03-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
NL1035970A1 (nl) * 2007-09-28 2009-04-03 Asml Holding Nv Lithographic Apparatus and Device Manufacturing Method.
EP2136250A1 (de) 2008-06-18 2009-12-23 ASML Netherlands B.V. Lithographische Vorrichtung und Verfahren
JP2009164642A (ja) * 2009-04-20 2009-07-23 Smc Corp 液浸露光のための屈折率調整用小流量液体の温調方法
NL2004808A (en) * 2009-06-30 2011-01-12 Asml Netherlands Bv Fluid handling structure, lithographic apparatus and device manufacturing method.
JP6467265B2 (ja) * 2015-03-30 2019-02-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6700794B2 (ja) * 2015-04-03 2020-05-27 キヤノン株式会社 インプリント材吐出装置
KR102645839B1 (ko) * 2018-12-18 2024-03-08 엘지이노텍 주식회사 액체 렌즈를 포함하는 카메라 모듈
CN114815524B (zh) * 2022-06-23 2022-09-02 江苏美信光电科技有限公司 一种光刻机工作台的清洁装置

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KR20180077311A (ko) 2003-08-29 2018-07-06 가부시키가이샤 니콘 액체회수장치, 노광장치, 노광방법 및 디바이스 제조방법
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WO2005038888A1 (ja) * 2003-10-22 2005-04-28 Nikon Corporation 露光装置、露光方法、デバイスの製造方法
US7697110B2 (en) * 2004-01-26 2010-04-13 Nikon Corporation Exposure apparatus and device manufacturing method
US7050146B2 (en) * 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4072543B2 (ja) * 2005-03-18 2008-04-09 キヤノン株式会社 液浸露光装置及びデバイス製造方法

Also Published As

Publication number Publication date
ATE490548T1 (de) 2010-12-15
US7973906B2 (en) 2011-07-05
US7948608B2 (en) 2011-05-24
KR20120104644A (ko) 2012-09-21
KR20120066080A (ko) 2012-06-21
KR20060071430A (ko) 2006-06-26
KR20140049044A (ko) 2014-04-24
KR20150039869A (ko) 2015-04-13
US20060187433A1 (en) 2006-08-24
US20110235006A1 (en) 2011-09-29
KR101547388B1 (ko) 2015-08-26
US9581913B2 (en) 2017-02-28
WO2005038888A1 (ja) 2005-04-28
KR101332543B1 (ko) 2013-11-25
US20180067406A1 (en) 2018-03-08
EP2079100A1 (de) 2009-07-15
KR20110123775A (ko) 2011-11-15
KR20170024154A (ko) 2017-03-06
US20170160651A1 (en) 2017-06-08
US7643129B2 (en) 2010-01-05
EP1677341B1 (de) 2010-12-01
JPWO2005038888A1 (ja) 2007-02-01
DE602004030838D1 (de) 2011-02-10
JP4325623B2 (ja) 2009-09-02
EP1677341A4 (de) 2008-01-16
EP2079100B1 (de) 2010-12-29
KR101275464B1 (ko) 2013-06-17
KR20130061770A (ko) 2013-06-11
US20080018869A1 (en) 2008-01-24
KR101712297B1 (ko) 2017-03-13
US8896813B2 (en) 2014-11-25
EP1677341A1 (de) 2006-07-05
ATE493754T1 (de) 2011-01-15
US20090153815A1 (en) 2009-06-18
US20140333909A1 (en) 2014-11-13
US9829807B2 (en) 2017-11-28

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