DE60331874D1 - Belichtungsapparat und Verfahren zur Herstellung einer Vorrichtung - Google Patents

Belichtungsapparat und Verfahren zur Herstellung einer Vorrichtung

Info

Publication number
DE60331874D1
DE60331874D1 DE60331874T DE60331874T DE60331874D1 DE 60331874 D1 DE60331874 D1 DE 60331874D1 DE 60331874 T DE60331874 T DE 60331874T DE 60331874 T DE60331874 T DE 60331874T DE 60331874 D1 DE60331874 D1 DE 60331874D1
Authority
DE
Germany
Prior art keywords
space
exposure apparatus
optical path
stage
forms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60331874T
Other languages
English (en)
Inventor
Noriyasu Hasegawa
Eiji Sakamoto
Shigeru Terashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002032274A external-priority patent/JP2003234281A/ja
Priority claimed from JP2002377086A external-priority patent/JP3809416B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE60331874D1 publication Critical patent/DE60331874D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus

Landscapes

  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
DE60331874T 2002-01-07 2003-01-02 Belichtungsapparat und Verfahren zur Herstellung einer Vorrichtung Expired - Lifetime DE60331874D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002000689 2002-01-07
JP2002032274A JP2003234281A (ja) 2002-02-08 2002-02-08 露光装置、デバイス製造方法
JP2002377086A JP3809416B2 (ja) 2002-01-07 2002-12-26 走査露光装置及びそれを用いたデバイス製造方法

Publications (1)

Publication Number Publication Date
DE60331874D1 true DE60331874D1 (de) 2010-05-12

Family

ID=27348060

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60331874T Expired - Lifetime DE60331874D1 (de) 2002-01-07 2003-01-02 Belichtungsapparat und Verfahren zur Herstellung einer Vorrichtung

Country Status (4)

Country Link
US (3) US6934003B2 (de)
EP (1) EP1326139B1 (de)
AT (1) ATE462991T1 (de)
DE (1) DE60331874D1 (de)

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US6954255B2 (en) * 2001-06-15 2005-10-11 Canon Kabushiki Kaisha Exposure apparatus
JPWO2003085708A1 (ja) * 2002-04-09 2005-08-18 株式会社ニコン 露光方法及び露光装置、並びにデバイス製造方法
TWI442694B (zh) * 2003-05-30 2014-06-21 Asml Netherlands Bv 微影裝置及元件製造方法
TWI385707B (zh) * 2003-09-03 2013-02-11 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
US20050153424A1 (en) * 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
US20070103661A1 (en) * 2004-06-04 2007-05-10 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
EP1768169B9 (de) * 2004-06-04 2013-03-06 Nikon Corporation Belichtungsvorrichtung, belichtungsverfahren und verfahren zur herstellung eines bauelementes
US20070222959A1 (en) * 2004-06-10 2007-09-27 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
EP3067749B1 (de) * 2004-06-10 2017-10-18 Nikon Corporation Belichtungsvorrichtung, belichtungsverfahren und verfahren zur herstellung der vorrichtung
US7522261B2 (en) * 2004-09-24 2009-04-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP3977377B2 (ja) * 2005-03-04 2007-09-19 キヤノン株式会社 露光装置およびデバイス製造方法
JP2006245400A (ja) * 2005-03-04 2006-09-14 Canon Inc 光学装置およびデバイス製造方法。
JP2006269942A (ja) * 2005-03-25 2006-10-05 Canon Inc 露光装置及びデバイス製造方法
US20070024982A1 (en) * 2005-06-14 2007-02-01 Carl Zeiss Smt Ag Imaging system for a microlithographic projection exposure system
JP4708876B2 (ja) * 2005-06-21 2011-06-22 キヤノン株式会社 液浸露光装置
JP2007067344A (ja) * 2005-09-02 2007-03-15 Canon Inc 露光装置および方法ならびにデバイス製造方法
US20080073596A1 (en) * 2006-08-24 2008-03-27 Asml Netherlands B.V. Lithographic apparatus and method
JP4966922B2 (ja) * 2008-07-07 2012-07-04 東京エレクトロン株式会社 レジスト処理装置、レジスト塗布現像装置、およびレジスト処理方法
SG159467A1 (en) * 2008-09-02 2010-03-30 Asml Netherlands Bv Fluid handling structure, lithographic apparatus and device manufacturing method
NL2006243A (en) * 2010-03-19 2011-09-20 Asml Netherlands Bv A lithographic apparatus, an illumination system, a projection system and a method of manufacturing a device using a lithographic apparatus.
JP5241862B2 (ja) 2011-01-01 2013-07-17 キヤノン株式会社 露光装置及びデバイスの製造方法
NL2008954A (en) 2011-07-08 2013-01-09 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
CN103959171B (zh) * 2011-11-17 2017-11-28 Asml荷兰有限公司 光刻设备及器件制造方法
WO2013135494A2 (en) 2012-03-14 2013-09-19 Asml Netherlands B.V. Lithographic apparatus
JP6025976B2 (ja) 2012-07-06 2016-11-16 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置
NL2012291A (en) 2013-02-20 2014-08-21 Asml Netherlands Bv Gas flow optimization in reticle stage environment.
US9488924B2 (en) 2014-01-07 2016-11-08 Applied Materials Israel Ltd. Cleaning an object within a non-vacuumed environment
NL2014934A (en) * 2014-07-16 2016-04-12 Asml Netherlands Bv Lithographic Apparatus and Device Manufacturing Method.
NL2016541A (en) * 2015-04-21 2016-10-24 Asml Netherlands Bv Lithographic Apparatus.
JP6698706B2 (ja) 2015-07-02 2020-05-27 エーエスエムエル ネザーランズ ビー．ブイ． 基板ホルダ、リソグラフィ装置およびデバイス製造方法
US10168626B2 (en) 2016-06-17 2019-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and a method of forming a particle shield
US11397385B2 (en) 2016-06-17 2022-07-26 Taiwan Semiconductor Manufacturing Company, Ltd Apparatus and a method of forming a particle shield
US10788764B2 (en) 2016-06-17 2020-09-29 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and a method of forming a particle shield
CN107783283B (zh) * 2016-08-30 2020-01-24 上海微电子装备（集团）股份有限公司 镜片防污染装置及方法
JP7060584B2 (ja) * 2016-09-02 2022-04-26 エーエスエムエル ネザーランズ ビー．ブイ． 冷却装置およびリソグラフィ装置
CN109283797B (zh) * 2017-07-21 2021-04-30 上海微电子装备（集团）股份有限公司 物镜保护装置、物镜系统以及光刻设备
CN113333234A (zh) * 2020-03-03 2021-09-03 伊利诺斯工具制品有限公司 分配装置

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JPS6030018B2 (ja) 1977-11-14 1985-07-13 三菱電機株式会社 露光装置
DE3447488A1 (de) 1984-10-19 1986-05-07 Canon K.K., Tokio/Tokyo Projektionseinrichtung
US4801352A (en) * 1986-12-30 1989-01-31 Image Micro Systems, Inc. Flowing gas seal enclosure for processing workpiece surface with controlled gas environment and intense laser irradiation
EP0357423B1 (de) 1988-09-02 1995-03-15 Canon Kabushiki Kaisha Belichtungseinrichtung
DE68929187T2 (de) 1988-09-02 2000-09-28 Canon K.K., Tokio/Tokyo Belichtungsapparat
JP2731950B2 (ja) 1989-07-13 1998-03-25 キヤノン株式会社 露光方法
US5231291A (en) 1989-08-01 1993-07-27 Canon Kabushiki Kaisha Wafer table and exposure apparatus with the same
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US5559584A (en) 1993-03-08 1996-09-24 Nikon Corporation Exposure apparatus
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JP3459742B2 (ja) 1996-01-17 2003-10-27 キヤノン株式会社 露光装置及びそれを用いたデバイスの製造方法
US6317479B1 (en) 1996-05-17 2001-11-13 Canon Kabushiki Kaisha X-ray mask, and exposure method and apparatus using the same
JPH10214782A (ja) 1996-11-29 1998-08-11 Nikon Corp 露光装置
AU8885198A (en) 1997-08-26 1999-03-16 Nikon Corporation Aligner, exposure method, method of pressure adjustment of projection optical system, and method of assembling aligner
JP3563935B2 (ja) 1997-09-30 2004-09-08 キヤノン株式会社 半導体製造用露光装置およびこれを用いた半導体デバイス製造プロセス
US5997963A (en) * 1998-05-05 1999-12-07 Ultratech Stepper, Inc. Microchamber
EP0957402B1 (de) 1998-05-15 2006-09-20 ASML Netherlands B.V. Lithographische Vorrichtung
JP2000200745A (ja) 1999-01-07 2000-07-18 Nikon Corp 投影露光装置
JP2000357643A (ja) 1999-06-14 2000-12-26 Canon Inc 露光方法及びそれを用いた露光装置
KR100805142B1 (ko) 1999-07-16 2008-02-21 가부시키가이샤 니콘 노광방법 및 노광장치
JP2001118783A (ja) 1999-10-21 2001-04-27 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
TW480372B (en) 1999-11-05 2002-03-21 Asm Lithography Bv Lithographic projection apparatus, method of manufacturing a device using the apparatus, and device manufactured according to the method
EP1098225A3 (de) 1999-11-05 2002-04-10 Asm Lithography B.V. Lithographischer Projektionsapparat mit Spülgassystem und Verfahren unter Verwendung desselben
EP1098226A3 (de) 1999-11-05 2002-01-09 Asm Lithography B.V. Lithographischer Apparat mit Spülgassystem
TW563002B (en) 1999-11-05 2003-11-21 Asml Netherlands Bv Lithographic projection apparatus, method of manufacturing a device using a lithographic projection apparatus, and device manufactured by the method
US6933513B2 (en) 1999-11-05 2005-08-23 Asml Netherlands B.V. Gas flushing system for use in lithographic apparatus
JP2001250759A (ja) 2000-03-06 2001-09-14 Canon Inc 露光装置
JP3869999B2 (ja) 2000-03-30 2007-01-17 キヤノン株式会社 露光装置および半導体デバイス製造方法
JP2001284224A (ja) 2000-03-30 2001-10-12 Nikon Corp 露光装置及び露光方法
JP3531914B2 (ja) 2000-04-14 2004-05-31 キヤノン株式会社 光学装置、露光装置及びデバイス製造方法
DE60130754T2 (de) 2000-05-03 2008-01-24 Asml Holding, N.V. Apparat zur Erzeugung eines gespülten optischen Weges in einer photolithographischen Projektionsanlage sowie ein entsprechendes Verfahren
JP2001358056A (ja) 2000-06-15 2001-12-26 Canon Inc 露光装置
JP4560182B2 (ja) 2000-07-06 2010-10-13 キヤノン株式会社 減圧処理装置、半導体製造装置およびデバイス製造方法
JP2002198277A (ja) 2000-12-22 2002-07-12 Canon Inc 補正装置、露光装置、デバイス製造方法及びデバイス
JP2002373852A (ja) 2001-06-15 2002-12-26 Canon Inc 露光装置
US6954255B2 (en) 2001-06-15 2005-10-11 Canon Kabushiki Kaisha Exposure apparatus

Also Published As

Publication number Publication date
US20060274292A1 (en) 2006-12-07
EP1326139A3 (de) 2004-10-13
US7123343B2 (en) 2006-10-17
US20050213063A1 (en) 2005-09-29
US20030169407A1 (en) 2003-09-11
EP1326139A2 (de) 2003-07-09
ATE462991T1 (de) 2010-04-15
EP1326139B1 (de) 2010-03-31
US6934003B2 (en) 2005-08-23
US7738076B2 (en) 2010-06-15

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Legal Events

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