ATE470889T1 - Belichtungsapparat, belichtungsverfahren, verwendung eines solchen belichtungsapparats und verfahren zur herstellung von vorrichtungen - Google Patents

Belichtungsapparat, belichtungsverfahren, verwendung eines solchen belichtungsapparats und verfahren zur herstellung von vorrichtungen

Info

Publication number
ATE470889T1
ATE470889T1 AT02257487T AT02257487T ATE470889T1 AT E470889 T1 ATE470889 T1 AT E470889T1 AT 02257487 T AT02257487 T AT 02257487T AT 02257487 T AT02257487 T AT 02257487T AT E470889 T1 ATE470889 T1 AT E470889T1
Authority
AT
Austria
Prior art keywords
alignment
exposure apparatus
exposure
reticle
producing devices
Prior art date
Application number
AT02257487T
Other languages
English (en)
Inventor
Satoru Oishi
Hideki Ina
Takehiko Suzuki
Koichi Sentoku
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE470889T1 publication Critical patent/ATE470889T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G03F9/7011—Pre-exposure scan; original with original holder alignment; Prealignment, i.e. workpiece with workpiece holder
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G03F9/7015—Reference, i.e. alignment of original or workpiece with respect to a reference not on the original or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Eyeglasses (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT02257487T 2001-10-30 2002-10-29 Belichtungsapparat, belichtungsverfahren, verwendung eines solchen belichtungsapparats und verfahren zur herstellung von vorrichtungen ATE470889T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001333347A JP4006217B2 (ja) 2001-10-30 2001-10-30 露光方法、露光装置及びデバイスの製造方法

Publications (1)

Publication Number Publication Date
ATE470889T1 true ATE470889T1 (de) 2010-06-15

Family

ID=19148621

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02257487T ATE470889T1 (de) 2001-10-30 2002-10-29 Belichtungsapparat, belichtungsverfahren, verwendung eines solchen belichtungsapparats und verfahren zur herstellung von vorrichtungen

Country Status (5)

Country Link
US (2) US7110116B2 (de)
EP (1) EP1308789B1 (de)
JP (1) JP4006217B2 (de)
AT (1) ATE470889T1 (de)
DE (1) DE60236637D1 (de)

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JP4803901B2 (ja) * 2001-05-22 2011-10-26 キヤノン株式会社 位置合わせ方法、露光装置、および半導体デバイス製造方法
JP4677174B2 (ja) * 2003-02-03 2011-04-27 キヤノン株式会社 位置検出装置
US7154582B2 (en) * 2003-02-14 2006-12-26 Canon Kabushiki Kaisha Exposure apparatus and method
JP4478424B2 (ja) * 2003-09-29 2010-06-09 キヤノン株式会社 微細加工装置およびデバイスの製造方法
US20050275841A1 (en) 2004-06-09 2005-12-15 Asml Netherlands B.V. Alignment marker and lithographic apparatus and device manufacturing method using the same
US7078700B2 (en) * 2004-06-30 2006-07-18 Intel Corporation Optics for extreme ultraviolet lithography
US7333175B2 (en) * 2004-09-13 2008-02-19 Asml Netherlands, B.V. Method and system for aligning a first and second marker
JP2006165371A (ja) * 2004-12-09 2006-06-22 Canon Inc 転写装置およびデバイス製造方法
JP4765313B2 (ja) * 2004-12-27 2011-09-07 株式会社ニコン 露光装置
JP4819419B2 (ja) * 2005-07-07 2011-11-24 キヤノン株式会社 結像光学系、露光装置及びデバイス製造方法
JP4958614B2 (ja) * 2006-04-18 2012-06-20 キヤノン株式会社 パターン転写装置、インプリント装置、パターン転写方法および位置合わせ装置
JP4795300B2 (ja) * 2006-04-18 2011-10-19 キヤノン株式会社 位置合わせ方法、インプリント方法、位置合わせ装置、インプリント装置、及び位置計測方法
EP2029963A1 (de) * 2006-05-31 2009-03-04 Canon Kabushiki Kaisha Fugenmessverfahren, druckverfahren und druckvorrichtung
JP4250637B2 (ja) * 2006-06-14 2009-04-08 キヤノン株式会社 走査露光装置及びデバイス製造方法
DE102006029799A1 (de) * 2006-06-27 2008-01-03 Carl Zeiss Smt Ag Reflektives optisches Element und Verfahren zu seiner Charakterisierung
DE102008004762A1 (de) * 2008-01-16 2009-07-30 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie mit einer Messeinrichtung
JP2010056361A (ja) * 2008-08-29 2010-03-11 Toshiba Corp 露光装置及び露光方法
JP5400579B2 (ja) 2008-12-08 2014-01-29 キヤノン株式会社 露光装置およびデバイス製造方法
US8050380B2 (en) * 2009-05-05 2011-11-01 Media Lario, S.R.L. Zone-optimized mirrors and optical systems using same
US20110027542A1 (en) * 2009-07-28 2011-02-03 Nsk Ltd. Exposure apparatus and exposure method
JP5563319B2 (ja) * 2010-01-19 2014-07-30 キヤノン株式会社 インプリント装置、および物品の製造方法
US8489225B2 (en) 2011-03-08 2013-07-16 International Business Machines Corporation Wafer alignment system with optical coherence tomography
DE102018201170A1 (de) * 2018-01-25 2019-07-25 Carl Zeiss Smt Gmbh Abbildende Optik für die EUV-Mikrolithographie
CN109932872B (zh) * 2019-02-14 2021-02-26 长江存储科技有限责任公司 一种标记的处理方法、套刻精度的量测方法以及标记
CN115698868A (zh) * 2020-06-09 2023-02-03 Asml控股股份有限公司 具有内置同轴照射的光刻预对准成像传感器

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Also Published As

Publication number Publication date
US20030081213A1 (en) 2003-05-01
EP1308789A2 (de) 2003-05-07
US7173716B2 (en) 2007-02-06
US7110116B2 (en) 2006-09-19
JP2003142363A (ja) 2003-05-16
EP1308789B1 (de) 2010-06-09
JP4006217B2 (ja) 2007-11-14
DE60236637D1 (de) 2010-07-22
US20050211918A1 (en) 2005-09-29
EP1308789A3 (de) 2006-04-12

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