ATE542167T1 - Lithographisches immersionsgerät - Google Patents
Lithographisches immersionsgerätInfo
- Publication number
- ATE542167T1 ATE542167T1 AT04759834T AT04759834T ATE542167T1 AT E542167 T1 ATE542167 T1 AT E542167T1 AT 04759834 T AT04759834 T AT 04759834T AT 04759834 T AT04759834 T AT 04759834T AT E542167 T1 ATE542167 T1 AT E542167T1
- Authority
- AT
- Austria
- Prior art keywords
- last element
- exposure light
- immersion device
- lower portion
- lithographic
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70641—Focus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
- G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7026—Focusing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7034—Leveling
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Automatic Focus Adjustment (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US46439203P | 2003-04-17 | 2003-04-17 | |
| PCT/US2004/011287 WO2004095135A2 (en) | 2003-04-17 | 2004-04-12 | Optical arrangement of autofocus elements for use with immersion lithography |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE542167T1 true ATE542167T1 (de) | 2012-02-15 |
Family
ID=33310880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT04759834T ATE542167T1 (de) | 2003-04-17 | 2004-04-12 | Lithographisches immersionsgerät |
Country Status (8)
| Country | Link |
|---|---|
| US (8) | US7414794B2 (de) |
| EP (1) | EP1614000B1 (de) |
| JP (2) | JP2006523958A (de) |
| KR (2) | KR101369582B1 (de) |
| CN (1) | CN1774667A (de) |
| AT (1) | ATE542167T1 (de) |
| SG (2) | SG194246A1 (de) |
| WO (1) | WO2004095135A2 (de) |
Families Citing this family (146)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005536775A (ja) * | 2002-08-23 | 2005-12-02 | 株式会社ニコン | 投影光学系、フォトリソグラフィ方法および露光装置、並びに露光装置を用いた方法 |
| US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| KR100585476B1 (ko) | 2002-11-12 | 2006-06-07 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 및 디바이스 제조방법 |
| US7372541B2 (en) | 2002-11-12 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| SG121819A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7948604B2 (en) | 2002-12-10 | 2011-05-24 | Nikon Corporation | Exposure apparatus and method for producing device |
| AU2003289271A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure apparatus, exposure method and method for manufacturing device |
| EP1571697A4 (de) | 2002-12-10 | 2007-07-04 | Nikon Corp | Belichtungssystem und bauelementeherstellungsverfahren |
| JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| US7242455B2 (en) | 2002-12-10 | 2007-07-10 | Nikon Corporation | Exposure apparatus and method for producing device |
| KR101085372B1 (ko) | 2002-12-10 | 2011-11-21 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| KR20050062665A (ko) | 2002-12-10 | 2005-06-23 | 가부시키가이샤 니콘 | 노광장치 및 디바이스 제조방법 |
| DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
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| KR101176817B1 (ko) | 2003-04-07 | 2012-08-24 | 가부시키가이샤 니콘 | 노광장치 및 디바이스 제조방법 |
| KR101177331B1 (ko) | 2003-04-09 | 2012-08-30 | 가부시키가이샤 니콘 | 액침 리소그래피 유체 제어 시스템 |
| JP4488005B2 (ja) | 2003-04-10 | 2010-06-23 | 株式会社ニコン | 液浸リソグラフィ装置用の液体を捕集するための流出通路 |
| EP3352015A1 (de) | 2003-04-10 | 2018-07-25 | Nikon Corporation | Umweltsystem mit einer transportregion für eine immersionslithographievorrichtung |
| KR101369016B1 (ko) | 2003-04-10 | 2014-02-28 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템 |
| KR20180054929A (ko) | 2003-04-11 | 2018-05-24 | 가부시키가이샤 니콘 | 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법 |
| EP2161620A1 (de) | 2003-04-11 | 2010-03-10 | Nikon Corporation | Reinigungsverfahren für Optik in Immersionslithographie |
| JP4582089B2 (ja) | 2003-04-11 | 2010-11-17 | 株式会社ニコン | 液浸リソグラフィ用の液体噴射回収システム |
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| EP2672307A3 (de) | 2003-05-06 | 2014-07-23 | Nikon Corporation | Optisches Projektionssystem, Belichtungsvorrichtung und Belichtungsverfahren |
| US7348575B2 (en) | 2003-05-06 | 2008-03-25 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
| TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
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| EP2466383B1 (de) | 2003-07-08 | 2014-11-19 | Nikon Corporation | Waferplatte für die Immersionslithografie |
| EP2264531B1 (de) | 2003-07-09 | 2013-01-16 | Nikon Corporation | Belichtungsgerät und Verfahren zur Herstellung einer Vorrichtung |
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-
2004
- 2004-04-12 SG SG2012028072A patent/SG194246A1/en unknown
- 2004-04-12 JP JP2006509951A patent/JP2006523958A/ja active Pending
- 2004-04-12 CN CNA2004800103892A patent/CN1774667A/zh active Pending
- 2004-04-12 WO PCT/US2004/011287 patent/WO2004095135A2/en not_active Ceased
- 2004-04-12 SG SG200716980-8A patent/SG152078A1/en unknown
- 2004-04-12 KR KR1020127029277A patent/KR101369582B1/ko not_active Expired - Fee Related
- 2004-04-12 KR KR1020057019798A patent/KR20050122269A/ko not_active Ceased
- 2004-04-12 AT AT04759834T patent/ATE542167T1/de active
- 2004-04-12 EP EP04759834A patent/EP1614000B1/de not_active Expired - Lifetime
-
2005
- 2005-09-26 US US11/234,279 patent/US7414794B2/en not_active Expired - Fee Related
-
2006
- 2006-12-01 US US11/606,914 patent/US7570431B2/en not_active Expired - Fee Related
-
2009
- 2009-06-19 US US12/457,742 patent/US8018657B2/en not_active Expired - Fee Related
- 2009-08-24 US US12/461,762 patent/US8094379B2/en not_active Expired - Fee Related
-
2010
- 2010-01-25 JP JP2010013490A patent/JP2010093299A/ja active Pending
-
2011
- 2011-12-07 US US13/313,399 patent/US8599488B2/en not_active Expired - Fee Related
-
2013
- 2013-10-29 US US14/066,315 patent/US8810915B2/en not_active Expired - Fee Related
-
2014
- 2014-07-14 US US14/330,263 patent/US8953250B2/en not_active Expired - Fee Related
-
2015
- 2015-01-05 US US14/589,399 patent/US9086636B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| SG194246A1 (en) | 2013-11-29 |
| US8599488B2 (en) | 2013-12-03 |
| US9086636B2 (en) | 2015-07-21 |
| US20070076303A1 (en) | 2007-04-05 |
| JP2006523958A (ja) | 2006-10-19 |
| US7570431B2 (en) | 2009-08-04 |
| SG152078A1 (en) | 2009-05-29 |
| US20120075609A1 (en) | 2012-03-29 |
| EP1614000B1 (de) | 2012-01-18 |
| US8018657B2 (en) | 2011-09-13 |
| EP1614000A4 (de) | 2007-05-09 |
| JP2010093299A (ja) | 2010-04-22 |
| CN1774667A (zh) | 2006-05-17 |
| US20150109595A1 (en) | 2015-04-23 |
| WO2004095135A2 (en) | 2004-11-04 |
| WO2004095135A3 (en) | 2004-12-09 |
| US20140055762A1 (en) | 2014-02-27 |
| KR101369582B1 (ko) | 2014-03-04 |
| KR20120132694A (ko) | 2012-12-07 |
| US20060017900A1 (en) | 2006-01-26 |
| US20140320833A1 (en) | 2014-10-30 |
| US8810915B2 (en) | 2014-08-19 |
| EP1614000A2 (de) | 2006-01-11 |
| US20090317751A1 (en) | 2009-12-24 |
| US7414794B2 (en) | 2008-08-19 |
| US8953250B2 (en) | 2015-02-10 |
| KR20050122269A (ko) | 2005-12-28 |
| US8094379B2 (en) | 2012-01-10 |
| US20090262322A1 (en) | 2009-10-22 |
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