ATE542167T1 - Lithographisches immersionsgerät - Google Patents
Lithographisches immersionsgerätInfo
- Publication number
- ATE542167T1 ATE542167T1 AT04759834T AT04759834T ATE542167T1 AT E542167 T1 ATE542167 T1 AT E542167T1 AT 04759834 T AT04759834 T AT 04759834T AT 04759834 T AT04759834 T AT 04759834T AT E542167 T1 ATE542167 T1 AT E542167T1
- Authority
- AT
- Austria
- Prior art keywords
- last element
- exposure light
- immersion device
- lower portion
- lithographic
- Prior art date
Links
- 238000007654 immersion Methods 0.000 title 1
- 239000007788 liquid Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70641—Focus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
- G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7026—Focusing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7034—Leveling
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Public Health (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Automatic Focus Adjustment (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US46439203P | 2003-04-17 | 2003-04-17 | |
PCT/US2004/011287 WO2004095135A2 (en) | 2003-04-17 | 2004-04-12 | Optical arrangement of autofocus elements for use with immersion lithography |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE542167T1 true ATE542167T1 (de) | 2012-02-15 |
Family
ID=33310880
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04759834T ATE542167T1 (de) | 2003-04-17 | 2004-04-12 | Lithographisches immersionsgerät |
Country Status (8)
Country | Link |
---|---|
US (8) | US7414794B2 (de) |
EP (1) | EP1614000B1 (de) |
JP (2) | JP2006523958A (de) |
KR (2) | KR101369582B1 (de) |
CN (1) | CN1774667A (de) |
AT (1) | ATE542167T1 (de) |
SG (2) | SG194246A1 (de) |
WO (1) | WO2004095135A2 (de) |
Families Citing this family (130)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7362508B2 (en) * | 2002-08-23 | 2008-04-22 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN100568101C (zh) | 2002-11-12 | 2009-12-09 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
SG121818A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7948604B2 (en) | 2002-12-10 | 2011-05-24 | Nikon Corporation | Exposure apparatus and method for producing device |
JP4362867B2 (ja) | 2002-12-10 | 2009-11-11 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
KR20050062665A (ko) | 2002-12-10 | 2005-06-23 | 가부시키가이샤 니콘 | 노광장치 및 디바이스 제조방법 |
SG171468A1 (en) | 2002-12-10 | 2011-06-29 | Nikon Corp | Exposure apparatus and method for producing device |
US7242455B2 (en) | 2002-12-10 | 2007-07-10 | Nikon Corporation | Exposure apparatus and method for producing device |
JP4352874B2 (ja) * | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
TW201908879A (zh) | 2003-02-26 | 2019-03-01 | 日商尼康股份有限公司 | 曝光裝置、曝光方法及元件製造方法 |
EP1610361B1 (de) | 2003-03-25 | 2014-05-21 | Nikon Corporation | Belichtungssystem und bauelementeherstellungsverfahren |
WO2004090956A1 (ja) | 2003-04-07 | 2004-10-21 | Nikon Corporation | 露光装置及びデバイス製造方法 |
KR101177331B1 (ko) | 2003-04-09 | 2012-08-30 | 가부시키가이샤 니콘 | 액침 리소그래피 유체 제어 시스템 |
KR101177330B1 (ko) | 2003-04-10 | 2012-08-30 | 가부시키가이샤 니콘 | 액침 리소그래피 장치 |
SG141425A1 (en) | 2003-04-10 | 2008-04-28 | Nikon Corp | Environmental system including vacuum scavange for an immersion lithography apparatus |
EP2921905B1 (de) | 2003-04-10 | 2017-12-27 | Nikon Corporation | Ablaufweg zum sammeln von flüssigkeiten für eine immersionslithografievorrichtung |
KR101508809B1 (ko) | 2003-04-11 | 2015-04-06 | 가부시키가이샤 니콘 | 액침 리소그래피에 의한 광학기기의 세정방법 |
JP4315198B2 (ja) | 2003-04-11 | 2009-08-19 | 株式会社ニコン | 液浸液体を光学アセンブリ下に維持するリソグラフィ装置及び液浸液体維持方法並びにそれらを用いるデバイス製造方法 |
JP4582089B2 (ja) | 2003-04-11 | 2010-11-17 | 株式会社ニコン | 液浸リソグラフィ用の液体噴射回収システム |
JP2006523958A (ja) | 2003-04-17 | 2006-10-19 | 株式会社ニコン | 液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造 |
US7348575B2 (en) | 2003-05-06 | 2008-03-25 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
KR101647934B1 (ko) | 2003-05-06 | 2016-08-11 | 가부시키가이샤 니콘 | 투영 광학계, 노광 장치 및 노광 방법 |
TWI295414B (en) * | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
TWI421906B (zh) | 2003-05-23 | 2014-01-01 | 尼康股份有限公司 | An exposure method, an exposure apparatus, and an element manufacturing method |
TWI424470B (zh) | 2003-05-23 | 2014-01-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
CN100541717C (zh) | 2003-05-28 | 2009-09-16 | 株式会社尼康 | 曝光方法、曝光装置以及器件制造方法 |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7684008B2 (en) | 2003-06-11 | 2010-03-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP3401946A1 (de) | 2003-06-13 | 2018-11-14 | Nikon Corporation | Belichtungsvorrichtung und verfahren zur herstellung eines artikels |
KR101146962B1 (ko) | 2003-06-19 | 2012-05-22 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조방법 |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
DE60308161T2 (de) | 2003-06-27 | 2007-08-09 | Asml Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung eines Artikels |
EP2466382B1 (de) | 2003-07-08 | 2014-11-26 | Nikon Corporation | Wafertisch für die Immersionslithografie |
EP2264531B1 (de) | 2003-07-09 | 2013-01-16 | Nikon Corporation | Belichtungsgerät und Verfahren zur Herstellung einer Vorrichtung |
WO2005006416A1 (ja) | 2003-07-09 | 2005-01-20 | Nikon Corporation | 結合装置、露光装置、及びデバイス製造方法 |
WO2005006418A1 (ja) | 2003-07-09 | 2005-01-20 | Nikon Corporation | 露光装置及びデバイス製造方法 |
EP1650787A4 (de) | 2003-07-25 | 2007-09-19 | Nikon Corp | Untersuchungsverfahren und untersuchungseinrichtung für ein optisches projektionssystem und herstellungsverfahren für ein optisches projektionssystem |
EP1503244A1 (de) | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographischer Projektionsapparat und Verfahren zur Herstellung einer Vorrichtung |
EP2264534B1 (de) | 2003-07-28 | 2013-07-17 | Nikon Corporation | Belichtungsapparat, Verfahren zur Herstellung einer Vorrichtung, und Verfahren zur Steuerung des Apparats |
US7175968B2 (en) | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
US7779781B2 (en) | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2261740B1 (de) | 2003-08-29 | 2014-07-09 | ASML Netherlands BV | Lithographischer Apparat |
TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
SG145780A1 (en) | 2003-08-29 | 2008-09-29 | Nikon Corp | Exposure apparatus and device fabricating method |
KR101748923B1 (ko) | 2003-09-03 | 2017-06-19 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
WO2005029559A1 (ja) | 2003-09-19 | 2005-03-31 | Nikon Corporation | 露光装置及びデバイス製造方法 |
KR101421398B1 (ko) | 2003-09-29 | 2014-07-18 | 가부시키가이샤 니콘 | 노광장치, 노광방법 및 디바이스 제조방법 |
KR20060126949A (ko) | 2003-10-08 | 2006-12-11 | 가부시키가이샤 니콘 | 기판 반송 장치와 기판 반송 방법, 노광 장치와 노광 방법,및 디바이스 제조 방법 |
KR101111364B1 (ko) | 2003-10-08 | 2012-02-27 | 가부시키가이샤 자오 니콘 | 기판 반송 장치 및 기판 반송 방법, 노광 장치 및 노광방법, 디바이스 제조 방법 |
TW201738932A (zh) | 2003-10-09 | 2017-11-01 | Nippon Kogaku Kk | 曝光裝置及曝光方法、元件製造方法 |
US7411653B2 (en) | 2003-10-28 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus |
US7352433B2 (en) | 2003-10-28 | 2008-04-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4295712B2 (ja) | 2003-11-14 | 2009-07-15 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び装置製造方法 |
TWI470371B (zh) | 2003-12-03 | 2015-01-21 | 尼康股份有限公司 | An exposure apparatus, an exposure method, an element manufacturing method, and an optical component |
KR101499405B1 (ko) | 2003-12-15 | 2015-03-05 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 및 노광 방법 |
US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2005191394A (ja) * | 2003-12-26 | 2005-07-14 | Canon Inc | 露光方法及び装置 |
EP1706793B1 (de) | 2004-01-20 | 2010-03-03 | Carl Zeiss SMT AG | Belichtungsvorrichtung und messeinrichtung für eine projektionslinse |
US7589822B2 (en) | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
WO2005076321A1 (ja) | 2004-02-03 | 2005-08-18 | Nikon Corporation | 露光装置及びデバイス製造方法 |
TWI402893B (zh) | 2004-03-25 | 2013-07-21 | 尼康股份有限公司 | 曝光方法 |
US7898642B2 (en) | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1747499A2 (de) | 2004-05-04 | 2007-01-31 | Nikon Corporation | Vorrichtung und verfahren zur bereitstellung eines fluids für die immersionslithographie |
US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005119368A2 (en) | 2004-06-04 | 2005-12-15 | Carl Zeiss Smt Ag | System for measuring the image quality of an optical imaging system |
EP2966670B1 (de) | 2004-06-09 | 2017-02-22 | Nikon Corporation | Belichtungsvorrichtung und vorrichtungsherstellungsverfahren |
US7463330B2 (en) | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
ATE441937T1 (de) | 2004-07-12 | 2009-09-15 | Nikon Corp | Belichtungsgerät und bauelemente- herstellungsverfahren |
EP1801853A4 (de) | 2004-08-18 | 2008-06-04 | Nikon Corp | Belichtungsvorrichtung und bauelementeherstellungsverfahren |
US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR100593751B1 (ko) * | 2004-11-16 | 2006-06-28 | 삼성전자주식회사 | 오토 포커스 시스템, 오토 포커스 방법 및 이를 이용한노광장치 |
US7411657B2 (en) | 2004-11-17 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7446850B2 (en) | 2004-12-03 | 2008-11-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7196770B2 (en) | 2004-12-07 | 2007-03-27 | Asml Netherlands B.V. | Prewetting of substrate before immersion exposure |
US7365827B2 (en) | 2004-12-08 | 2008-04-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7352440B2 (en) | 2004-12-10 | 2008-04-01 | Asml Netherlands B.V. | Substrate placement in immersion lithography |
US7403261B2 (en) | 2004-12-15 | 2008-07-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7528931B2 (en) | 2004-12-20 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7880860B2 (en) | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7405805B2 (en) | 2004-12-28 | 2008-07-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1681597B1 (de) | 2005-01-14 | 2010-03-10 | ASML Netherlands B.V. | Lithografische Vorrichtung und Herstellungsverfahren |
EP2506289A3 (de) | 2005-01-31 | 2013-05-22 | Nikon Corporation | Belichtungsvorrichtung und Verfahren zur Herstellung einer Vorrichtung |
US8692973B2 (en) | 2005-01-31 | 2014-04-08 | Nikon Corporation | Exposure apparatus and method for producing device |
US8859188B2 (en) | 2005-02-10 | 2014-10-14 | Asml Netherlands B.V. | Immersion liquid, exposure apparatus, and exposure process |
US7224431B2 (en) | 2005-02-22 | 2007-05-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8018573B2 (en) | 2005-02-22 | 2011-09-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7378025B2 (en) | 2005-02-22 | 2008-05-27 | Asml Netherlands B.V. | Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method |
US7282701B2 (en) | 2005-02-28 | 2007-10-16 | Asml Netherlands B.V. | Sensor for use in a lithographic apparatus |
US7428038B2 (en) | 2005-02-28 | 2008-09-23 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid |
US7324185B2 (en) | 2005-03-04 | 2008-01-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7411654B2 (en) | 2005-04-05 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7291850B2 (en) | 2005-04-08 | 2007-11-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
USRE43576E1 (en) | 2005-04-08 | 2012-08-14 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
US20060232753A1 (en) | 2005-04-19 | 2006-10-19 | Asml Holding N.V. | Liquid immersion lithography system with tilted liquid flow |
US8248577B2 (en) | 2005-05-03 | 2012-08-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7433016B2 (en) | 2005-05-03 | 2008-10-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2006313866A (ja) * | 2005-05-09 | 2006-11-16 | Canon Inc | 露光装置及び方法 |
US7652746B2 (en) | 2005-06-21 | 2010-01-26 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7474379B2 (en) | 2005-06-28 | 2009-01-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7834974B2 (en) | 2005-06-28 | 2010-11-16 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8054445B2 (en) | 2005-08-16 | 2011-11-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7411658B2 (en) | 2005-10-06 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7864292B2 (en) | 2005-11-16 | 2011-01-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7804577B2 (en) | 2005-11-16 | 2010-09-28 | Asml Netherlands B.V. | Lithographic apparatus |
US7773195B2 (en) | 2005-11-29 | 2010-08-10 | Asml Holding N.V. | System and method to increase surface tension and contact angle in immersion lithography |
US7649611B2 (en) | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8045134B2 (en) | 2006-03-13 | 2011-10-25 | Asml Netherlands B.V. | Lithographic apparatus, control system and device manufacturing method |
JP4889331B2 (ja) * | 2006-03-22 | 2012-03-07 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
WO2007118014A2 (en) | 2006-04-03 | 2007-10-18 | Nikon Corporation | Incidence surfaces and optical windows that are solvophobic to immersion liquids |
US9477158B2 (en) | 2006-04-14 | 2016-10-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE102006021797A1 (de) | 2006-05-09 | 2007-11-15 | Carl Zeiss Smt Ag | Optische Abbildungseinrichtung mit thermischer Dämpfung |
US7826030B2 (en) | 2006-09-07 | 2010-11-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8045135B2 (en) | 2006-11-22 | 2011-10-25 | Asml Netherlands B.V. | Lithographic apparatus with a fluid combining unit and related device manufacturing method |
US9632425B2 (en) | 2006-12-07 | 2017-04-25 | Asml Holding N.V. | Lithographic apparatus, a dryer and a method of removing liquid from a surface |
US8634053B2 (en) | 2006-12-07 | 2014-01-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8237911B2 (en) | 2007-03-15 | 2012-08-07 | Nikon Corporation | Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine |
US8947629B2 (en) | 2007-05-04 | 2015-02-03 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US7900641B2 (en) | 2007-05-04 | 2011-03-08 | Asml Netherlands B.V. | Cleaning device and a lithographic apparatus cleaning method |
JP5097166B2 (ja) | 2008-05-28 | 2012-12-12 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び装置の動作方法 |
US7742163B2 (en) * | 2008-07-08 | 2010-06-22 | Tokyo Electron Limited | Field replaceable units (FRUs) optimized for integrated metrology (IM) |
NL2005207A (en) | 2009-09-28 | 2011-03-29 | Asml Netherlands Bv | Heat pipe, lithographic apparatus and device manufacturing method. |
EP2381310B1 (de) | 2010-04-22 | 2015-05-06 | ASML Netherlands BV | Flüssigkeitshandhabungsstruktur und lithographischer Apparat |
US9389349B2 (en) * | 2013-03-15 | 2016-07-12 | Kla-Tencor Corporation | System and method to determine depth for optical wafer inspection |
KR102138089B1 (ko) | 2013-07-04 | 2020-07-28 | 한국과학기술원 | 리소그래피용 메타-포토레지스트 |
EP4229387A4 (de) * | 2020-10-15 | 2024-10-16 | Applied Materials Inc | Inline-metrologiesysteme, vorrichtung und verfahren für optische vorrichtungen |
Family Cites Families (134)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2102922C3 (de) * | 1971-01-22 | 1978-08-24 | Ernst Leitz Wetzlar Gmbh, 6330 Wetzlar | Anordnung zum selbsttätigen Fokussieren auf in optischen Geräten zu betrachtende Objekte |
US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
JPS57153433A (en) * | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
JPS5919912A (ja) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH0562877A (ja) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | 光によるlsi製造縮小投影露光装置の光学系 |
JP3374413B2 (ja) * | 1992-07-20 | 2003-02-04 | 株式会社ニコン | 投影露光装置、投影露光方法、並びに集積回路製造方法 |
JPH06124873A (ja) | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JP2753930B2 (ja) * | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
KR100300618B1 (ko) * | 1992-12-25 | 2001-11-22 | 오노 시게오 | 노광방법,노광장치,및그장치를사용하는디바이스제조방법 |
JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
DE19604363A1 (de) * | 1995-02-23 | 1996-08-29 | Zeiss Carl Fa | Zusatzmodul zur ortsaufgelösten Fokusvermessung |
JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
JPH08316124A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
JP3747566B2 (ja) * | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
JPH11176727A (ja) * | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
AU2747999A (en) * | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
KR20010048755A (ko) | 1999-11-29 | 2001-06-15 | 윤종용 | 오토 포커스 시스템을 갖는 노광 장치의 포커싱 방법 |
US7187503B2 (en) * | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
US6995930B2 (en) * | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
KR100866818B1 (ko) * | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
US20020163629A1 (en) * | 2001-05-07 | 2002-11-07 | Michael Switkes | Methods and apparatus employing an index matching medium |
TW527652B (en) * | 2002-02-06 | 2003-04-11 | Taiwan Semiconductor Mfg | Manufacturing method of selection gate for the split gate flash memory cell and its structure |
DE10229818A1 (de) * | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
US7092069B2 (en) * | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
JP4370554B2 (ja) * | 2002-06-14 | 2009-11-25 | 株式会社ニコン | オートフォーカス装置およびオートフォーカス付き顕微鏡 |
US7362508B2 (en) | 2002-08-23 | 2008-04-22 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
US6988326B2 (en) * | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
US7367345B1 (en) | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US7093375B2 (en) * | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
US6954993B1 (en) * | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
SG121822A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7110081B2 (en) * | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN101424881B (zh) * | 2002-11-12 | 2011-11-30 | Asml荷兰有限公司 | 光刻投射装置 |
CN100568101C (zh) * | 2002-11-12 | 2009-12-09 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
DE60335595D1 (de) * | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
SG121818A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
SG131766A1 (en) * | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10253679A1 (de) * | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
DE10258718A1 (de) * | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
CN100429748C (zh) * | 2002-12-10 | 2008-10-29 | 株式会社尼康 | 曝光装置和器件制造方法 |
EP1429190B1 (de) * | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Belichtungsapparat und -verfahren |
JP4184346B2 (ja) | 2002-12-13 | 2008-11-19 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 層上のスポットを照射するための方法及び装置における液体除去 |
US7010958B2 (en) * | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
KR100971440B1 (ko) | 2002-12-19 | 2010-07-21 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 레이어 상의 스폿을 조사하기 위한 방법 및 장치 |
DE60307322T2 (de) | 2002-12-19 | 2007-10-18 | Koninklijke Philips Electronics N.V. | Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts |
US6781670B2 (en) * | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
US7090964B2 (en) * | 2003-02-21 | 2006-08-15 | Asml Holding N.V. | Lithographic printing with polarized light |
US6943941B2 (en) * | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7206059B2 (en) * | 2003-02-27 | 2007-04-17 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7029832B2 (en) * | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
KR101177331B1 (ko) | 2003-04-09 | 2012-08-30 | 가부시키가이샤 니콘 | 액침 리소그래피 유체 제어 시스템 |
SG141425A1 (en) | 2003-04-10 | 2008-04-28 | Nikon Corp | Environmental system including vacuum scavange for an immersion lithography apparatus |
EP2921905B1 (de) | 2003-04-10 | 2017-12-27 | Nikon Corporation | Ablaufweg zum sammeln von flüssigkeiten für eine immersionslithografievorrichtung |
WO2004090633A2 (en) | 2003-04-10 | 2004-10-21 | Nikon Corporation | An electro-osmotic element for an immersion lithography apparatus |
KR101177330B1 (ko) | 2003-04-10 | 2012-08-30 | 가부시키가이샤 니콘 | 액침 리소그래피 장치 |
JP4315198B2 (ja) | 2003-04-11 | 2009-08-19 | 株式会社ニコン | 液浸液体を光学アセンブリ下に維持するリソグラフィ装置及び液浸液体維持方法並びにそれらを用いるデバイス製造方法 |
KR101508809B1 (ko) | 2003-04-11 | 2015-04-06 | 가부시키가이샤 니콘 | 액침 리소그래피에 의한 광학기기의 세정방법 |
JP4582089B2 (ja) | 2003-04-11 | 2010-11-17 | 株式会社ニコン | 液浸リソグラフィ用の液体噴射回収システム |
JP2006523958A (ja) | 2003-04-17 | 2006-10-19 | 株式会社ニコン | 液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造 |
JP4025683B2 (ja) * | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
JP4146755B2 (ja) * | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
EP1477856A1 (de) * | 2003-05-13 | 2004-11-17 | ASML Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
US7684008B2 (en) * | 2003-06-11 | 2010-03-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4054285B2 (ja) * | 2003-06-12 | 2008-02-27 | 松下電器産業株式会社 | パターン形成方法 |
JP4084710B2 (ja) * | 2003-06-12 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
US6867844B2 (en) * | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
JP4084712B2 (ja) * | 2003-06-23 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP4029064B2 (ja) * | 2003-06-23 | 2008-01-09 | 松下電器産業株式会社 | パターン形成方法 |
US6809794B1 (en) * | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
EP1639391A4 (de) | 2003-07-01 | 2009-04-29 | Nikon Corp | Verwendung isotopisch spezifizierter fluide als optische elemente |
US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7175968B2 (en) * | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
US7326522B2 (en) * | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
US7061578B2 (en) | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7700267B2 (en) * | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
US7579135B2 (en) * | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
US7085075B2 (en) * | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
US7070915B2 (en) * | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
US6954256B2 (en) * | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
US7014966B2 (en) * | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
KR101748923B1 (ko) | 2003-09-03 | 2017-06-19 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
US6961186B2 (en) * | 2003-09-26 | 2005-11-01 | Takumi Technology Corp. | Contact printing using a magnified mask image |
US7369217B2 (en) * | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
US7678527B2 (en) * | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
US7411653B2 (en) | 2003-10-28 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus |
JP2007525824A (ja) | 2003-11-05 | 2007-09-06 | ディーエスエム アイピー アセッツ ビー.ブイ. | マイクロチップを製造するための方法および装置 |
US7924397B2 (en) * | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
WO2005054953A2 (en) | 2003-11-24 | 2005-06-16 | Carl-Zeiss Smt Ag | Holding device for an optical element in an objective |
US7545481B2 (en) | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7125652B2 (en) * | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
WO2005059654A1 (en) | 2003-12-15 | 2005-06-30 | Carl Zeiss Smt Ag | Objective as a microlithography projection objective with at least one liquid lens |
KR101200654B1 (ko) | 2003-12-15 | 2012-11-12 | 칼 짜이스 에스엠티 게엠베하 | 고 개구율 및 평평한 단부면을 가진 투사 대물렌즈 |
JP5102492B2 (ja) | 2003-12-19 | 2012-12-19 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 結晶素子を有するマイクロリソグラフィー投影用対物レンズ |
US7460206B2 (en) * | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
US20050185269A1 (en) * | 2003-12-19 | 2005-08-25 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7589818B2 (en) * | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
US7119884B2 (en) | 2003-12-24 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050147920A1 (en) * | 2003-12-30 | 2005-07-07 | Chia-Hui Lin | Method and system for immersion lithography |
US7088422B2 (en) * | 2003-12-31 | 2006-08-08 | International Business Machines Corporation | Moving lens for immersion optical lithography |
JP4371822B2 (ja) * | 2004-01-06 | 2009-11-25 | キヤノン株式会社 | 露光装置 |
JP4429023B2 (ja) * | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US20050153424A1 (en) * | 2004-01-08 | 2005-07-14 | Derek Coon | Fluid barrier with transparent areas for immersion lithography |
CN102169226B (zh) | 2004-01-14 | 2014-04-23 | 卡尔蔡司Smt有限责任公司 | 反射折射投影物镜 |
US8279524B2 (en) | 2004-01-16 | 2012-10-02 | Carl Zeiss Smt Gmbh | Polarization-modulating optical element |
WO2005069078A1 (en) | 2004-01-19 | 2005-07-28 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus with immersion projection lens |
EP1706793B1 (de) | 2004-01-20 | 2010-03-03 | Carl Zeiss SMT AG | Belichtungsvorrichtung und messeinrichtung für eine projektionslinse |
US7026259B2 (en) * | 2004-01-21 | 2006-04-11 | International Business Machines Corporation | Liquid-filled balloons for immersion lithography |
US7391501B2 (en) * | 2004-01-22 | 2008-06-24 | Intel Corporation | Immersion liquids with siloxane polymer for immersion lithography |
EP1723467A2 (de) | 2004-02-03 | 2006-11-22 | Rochester Institute of Technology | Ein fluid verwendendes photolithographieverfahren und system dafür |
EP1716454A1 (de) | 2004-02-09 | 2006-11-02 | Carl Zeiss SMT AG | Projektionsobjektiv für eine mikrolithographische projektionsbelichtungsvorrichtung |
US7050146B2 (en) * | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2007522508A (ja) | 2004-02-13 | 2007-08-09 | カール・ツアイス・エスエムテイ・アーゲー | マイクロリソグラフィック投影露光装置のための投影対物レンズ |
WO2005081030A1 (en) | 2004-02-18 | 2005-09-01 | Corning Incorporated | Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light |
US20050205108A1 (en) * | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
US7027125B2 (en) * | 2004-03-25 | 2006-04-11 | International Business Machines Corporation | System and apparatus for photolithography |
US7084960B2 (en) * | 2004-03-29 | 2006-08-01 | Intel Corporation | Lithography using controlled polarization |
US7034917B2 (en) * | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
US7227619B2 (en) * | 2004-04-01 | 2007-06-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7295283B2 (en) * | 2004-04-02 | 2007-11-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005098504A1 (en) | 2004-04-08 | 2005-10-20 | Carl Zeiss Smt Ag | Imaging system with mirror group |
-
2004
- 2004-04-12 JP JP2006509951A patent/JP2006523958A/ja active Pending
- 2004-04-12 CN CNA2004800103892A patent/CN1774667A/zh active Pending
- 2004-04-12 SG SG2012028072A patent/SG194246A1/en unknown
- 2004-04-12 KR KR1020127029277A patent/KR101369582B1/ko active IP Right Grant
- 2004-04-12 WO PCT/US2004/011287 patent/WO2004095135A2/en active Application Filing
- 2004-04-12 EP EP04759834A patent/EP1614000B1/de not_active Expired - Lifetime
- 2004-04-12 KR KR1020057019798A patent/KR20050122269A/ko not_active Application Discontinuation
- 2004-04-12 SG SG200716980-8A patent/SG152078A1/en unknown
- 2004-04-12 AT AT04759834T patent/ATE542167T1/de active
-
2005
- 2005-09-26 US US11/234,279 patent/US7414794B2/en not_active Expired - Fee Related
-
2006
- 2006-12-01 US US11/606,914 patent/US7570431B2/en not_active Expired - Fee Related
-
2009
- 2009-06-19 US US12/457,742 patent/US8018657B2/en not_active Expired - Fee Related
- 2009-08-24 US US12/461,762 patent/US8094379B2/en not_active Expired - Fee Related
-
2010
- 2010-01-25 JP JP2010013490A patent/JP2010093299A/ja active Pending
-
2011
- 2011-12-07 US US13/313,399 patent/US8599488B2/en not_active Expired - Fee Related
-
2013
- 2013-10-29 US US14/066,315 patent/US8810915B2/en not_active Expired - Fee Related
-
2014
- 2014-07-14 US US14/330,263 patent/US8953250B2/en not_active Expired - Fee Related
-
2015
- 2015-01-05 US US14/589,399 patent/US9086636B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO2004095135A3 (en) | 2004-12-09 |
EP1614000A4 (de) | 2007-05-09 |
KR20120132694A (ko) | 2012-12-07 |
US20140055762A1 (en) | 2014-02-27 |
SG152078A1 (en) | 2009-05-29 |
US8953250B2 (en) | 2015-02-10 |
US8018657B2 (en) | 2011-09-13 |
US20140320833A1 (en) | 2014-10-30 |
SG194246A1 (en) | 2013-11-29 |
US8599488B2 (en) | 2013-12-03 |
US20120075609A1 (en) | 2012-03-29 |
EP1614000A2 (de) | 2006-01-11 |
US20060017900A1 (en) | 2006-01-26 |
CN1774667A (zh) | 2006-05-17 |
KR20050122269A (ko) | 2005-12-28 |
JP2006523958A (ja) | 2006-10-19 |
JP2010093299A (ja) | 2010-04-22 |
US20090262322A1 (en) | 2009-10-22 |
WO2004095135A2 (en) | 2004-11-04 |
US20150109595A1 (en) | 2015-04-23 |
US7570431B2 (en) | 2009-08-04 |
US9086636B2 (en) | 2015-07-21 |
US8094379B2 (en) | 2012-01-10 |
KR101369582B1 (ko) | 2014-03-04 |
US20090317751A1 (en) | 2009-12-24 |
US7414794B2 (en) | 2008-08-19 |
EP1614000B1 (de) | 2012-01-18 |
US20070076303A1 (en) | 2007-04-05 |
US8810915B2 (en) | 2014-08-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE542167T1 (de) | Lithographisches immersionsgerät | |
TW200508811A (en) | Exposure method, exposure device, and device manufacturing method | |
TW200518187A (en) | Exposure apparatus, exposure method, and device manufacturing method | |
ATE448565T1 (de) | Lichtquelleneinheit, optische beleuchtungsvorrichtung und belichtungsvorrichtung | |
WO2004107048A3 (de) | Mikrolithographische projektionsbelichtungsanlage | |
TW200625445A (en) | Substrate processing method | |
TW200509205A (en) | Exposure method and device-manufacturing method | |
TW200502720A (en) | Immersion photolithography system and method using inverted wafer-projection optics interface | |
WO2005078522A3 (en) | Illumination system for a microlithographic projection exposure apparatus | |
DE60331874D1 (de) | Belichtungsapparat und Verfahren zur Herstellung einer Vorrichtung | |
WO2004019128A3 (en) | Projection optical system and method for photolithography and exposure apparatus and method using same | |
JP2005268759A5 (de) | ||
TW200520052A (en) | Exposure apparatus, exposure method, and device-producing method | |
DE60236637D1 (de) | Belichtungsapparat, Belichtungsverfahren, Verwendung eines solchen Belichtungsapparats und Verfahren zur Herstellung von Vorrichtungen | |
EP1355194A3 (de) | Projektionsbelichtungsapparat und Verfahren zur Herstellung einer Vorrichtung | |
WO2005069080A3 (de) | Vorrichtung und verfahren zur optischen vermessung eines optischen systems, messstrukturträger und mikrolithographie-projektionsbelichtungsanlage | |
TW200727335A (en) | Method for forming resist pattern, and method for manufacturing semiconductor device | |
TW200702947A (en) | Liquid immersion lithography system having a tilted showerhead relative to a substrate | |
JP2012155330A5 (ja) | 露光装置、露光方法、およびデバイス製造方法 | |
TW200622514A (en) | Lithographic apparatus and device manufacturing method | |
ATE469425T1 (de) | Belichtungsspiegel und damit versehene belichtungsvorrichtung | |
ATE354911T1 (de) | Gerät zur gleichzeitigen bildprojektion und raumbeleuchtung | |
WO2006041544A3 (en) | Solid immersion lens lithography | |
ATE546286T1 (de) | Erzeugung einer einheitlichen bildgebungsoberfläche | |
WO2005106594A3 (en) | Device and method for determining an illumination intensity profile of an illuminator for a lithography system |