JP2005536775A - 投影光学系、フォトリソグラフィ方法および露光装置、並びに露光装置を用いた方法 - Google Patents
投影光学系、フォトリソグラフィ方法および露光装置、並びに露光装置を用いた方法 Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
- G02B17/0892—Catadioptric systems specially adapted for the UV
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B21/00—Microscopes
- G02B21/33—Immersion oils, or microscope systems or objectives for use with immersion fluids
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/22—Telecentric objectives or lens systems
Abstract
Description
0.012<Cb・D/NA<0.475 (1)
|P・D|<1.0×10-4 (2)
b. 結果として生ずる球面収差やコマ収差は、当該系内の幾つかの非球面を含む他の要素の中で容易に補正でき、このことは、マイクロリソグラフィーで使用される広視野内で急激に変化する軸外球面収差、コマ収差、非点収差、ディストーション等の高次の収差を補正する上で有利なことである。この手法は、V型反射屈折系設計等の2つの中間像を有する長く複雑な系において特に有効である。
c. コンセントリック条件を厳密に満たした面の場合に発生するようなウエハ上の焦点ゴースト像は全く発生しない。
+C4・y4+C6・y6+C8・y8+C10・y10+C12・y12
+C14・y14+C16・y16+C18・y18+C20・y20 (4)
λ=193.306nm
β=−1/4
NA=1.0
D=B=15mm
A=3mm
LX=26mm
LY=4.4mm
Cb=0.01095mm-1
P=0mm-1
Cb・D/NA=0.164
|P・D|=0
β=−1/4
NA=1.0
D=B=15mm
A=3mm
LX=26mm
LY=4.4mm
Cb=0.01087mm-1
P=0mm-1
Cb・D/NA=0.163
|P・D|=0
β=−1/4
NA=0.9
D=B=12mm
LX=22mm
LY=9mm
Cb=0.002mm-1
P=0mm-1
Cb・D/NA=0.0267
|P・D|=0
0.75<MA/MG3<1.1 (5)
好ましくは、0.8<MA/MG3<1.05
但し、MAは光学系全体の倍率であり、MG3は第3結像レンズ系G3の倍率である。
倍率 MA
MG3 MA/MG3
第1実施例 1/4
1/3.55 0.888
第2実施例(ArF) 1/4
1/3.53 0.883
第3実施例(F2) 1/4
1/3.78 0.945
第5実施例 1/4
1/3.42 0.855
NA(像側):1.25
倍率MA:1/4
露光領域:A=3.5mm、B=15.1mmであるから矩形領域26mm×4mm
中心波長:193.306nm
石英ガラスの屈折率:1.5603261
純水の屈折率:1.4368163
石英ガラスの分散(dn/dλ):−1.591E−6/pm
純水の分散(dn/dλ):−2.096E−6/pm
Claims (43)
- 第1面(OP)の像を第2面(IP)上に投影するための投影光学系であって、
境界レンズ(E233)と、
前記境界レンズ(E233)と前記第2面(IP)との間の少なくとも1つの液浸液(IL)の層とを有し、
前記境界レンズ(E233)は、前記境界レンズ(E233)を通して前記第2面(IP)上に投影される光に関して、入射前の外縁光線収束角(L)が前記境界レンズ(E233)内の外縁光線収束角(S)より大きくなるように形成された第1面側の光学面(S263)を有している投影光学系。 - 請求項1に記載の投影光学系であって、
前記境界レンズ(E233)に近接し、かつ、非球面光学面(S259、S260、S261、S262)を有する少なくとも1つの正の屈折力を有するレンズ要素(E231、E232)を更に有している投影光学系。 - 請求項1に記載の投影光学系であって、
前記境界レンズ(E233)に近接し、かつ、少なくとも1つの非球面光学面(S259、S260)を有する第1の正の屈折力を有するレンズ要素(E231)と、
前記第1の正の屈折力を有するレンズ要素(E231)と前記境界レンズ(E233)との間にあり、かつ、少なくとも1つの非球面光学面(S261、S262)を有する第2の正の屈折力を有するレンズ要素(E232)とを備えた投影光学系。 - 請求項1乃至3のいずれか1項に記載の投影光学系であって、
第3の正の屈折力を有するレンズ要素(E222)、第1の負の屈折力を有するレンズ要素(E223)、第2の負の屈折力を有するレンズ要素(E224)、及び第4の正の屈折力を有するレンズ要素(E225)を含んだ球面収差を低減するために配置された複ガウス型アナスチグマートを更に有している投影光学系。 - 請求項1乃至4のいずれか1項に記載の投影光学系であって、
凹面鏡(E215)と少なくとも1つの負の屈折力を有するシュプマン型レンズ(E213、E214)とを有する反射屈折型アナスチグマートを更に有している投影光学系。 - 請求項5に記載の投影光学系であって、
前記反射屈折型アナスチグマートは2つの負の屈折力を有するシュプマン型レンズ(E213、E214)を有している投影光学系。 - 請求項1乃至6のいずれか1項に記載の投影光学系であって、
紫外光と共に使用するために適合化された投影光学系。 - 第1面(OP)の像を第2面(IP)上に投影するための投影光学系であって、
光学系と、
境界レンズ(E233)と、
前記境界レンズ(E233)と前記第2面(IP)との間の少なくとも1つの液浸液(IL)の層とを有し、
前記第1面(OP)からの光が、前記光学系を透過して、所定の外縁光線収束角(L)をもって射出し、かつ、
前記境界レンズ(E233)は、前記光学系から射出した前記光を受けるために配置されており、かつ、前記境界レンズ(E233)を通して前記第2面(IP)上に投影される光に関して、前記入射前の外縁光線収束角(L)が前記境界レンズ(E233)内の外縁光線収束角(S)より大きくなるように適合化されている投影光学系。 - 請求項8に記載の投影光学系であって、
前記境界レンズ(E233)に近接し、かつ、非球面光学面(S259、S260、S261、S262)を有する少なくとも1つの正の屈折力を有するレンズ要素(E231、E232)を有している投影光学系。 - 請求項8に記載の投影光学系であって、
前記境界レンズ(E233)に近接し、かつ、少なくとも1つの非球面光学面(S259、S260)を有する第1の正の屈折力を有するレンズ要素(E231)と、
前記第1の正の屈折力を有するレンズ要素(E231)と前記境界レンズ(E233)との間にあり、かつ、少なくとも1つの非球面光学面(S261、S262)を有する第2の正の屈折力を有するレンズ要素(E232)とを有している投影光学系。 - 請求項8乃至10のいずれか1項に記載の投影光学系であって、
第3の正の屈折力を有するレンズ要素(E222)、第1の負の屈折力を有するレンズ要素(E223)、第2の負の屈折力を有するレンズ要素(E224)、及び第4の正の屈折力を有するレンズ要素(E225)を含んだ球面収差を低減するために配置された複ガウス型アナスチグマートを有している投影光学系。 - 請求項8乃至11のいずれか1項に記載の投影光学系であって、凹面鏡(E215)と少なくとも1つの負の屈折力を有するシュプマン型レンズ(E213、E214)とを有する反射屈折型アナスチグマートを更に有している投影光学系。
- 請求項12に記載の投影光学系であって、
前記反射屈折型アナスチグマートは2つの負の屈折力を有するシュプマン型レンズ(E213、E214)を有している投影光学系。 - 請求項8乃至13のいずれか1項に記載の投影光学系であって、
紫外光と共に使用するために適合化された投影光学系。 - 第1面の像を第2面(IP)上に投影するための投影方法であって、
第1の外縁光線収束角(L)を持つ光を境界レンズ(E233)に伝えるステップと、
第2の外縁光線収束角(S)を持つ光を前記境界レンズ(E233)を通して伝えるステップと、
前記境界レンズ(E233)からの光を液浸液(IL)を通して前記第2面(IP)に伝えるステップとを含んでおり、
前記第1の外縁光線収束角(L)は前記第2の外縁光線収束角(S)より大きい投影方法。 - 請求項15に記載の投影方法であって、
前記境界レンズ(E233)に近接し、かつ、非球面光学面(S259、S260、S261、S262)を有する少なくとも1つの正の屈折力を有するレンズ要素(E231、E232)を通して光を伝えるステップを含んだ投影方法。 - 請求項15に記載の投影方法であって、
前記境界レンズ(E233)に近接し、かつ、少なくとも1つの非球面光学面(S259、S260)を有する第1の正の屈折力を有するレンズ要素(E231)を通して光を伝えるステップと、
前記第1の正の屈折力を有するレンズ要素(E231)と前記境界レンズ(E233)との間にあり、かつ、少なくとも1つの非球面光学面(S261、S262)を有する第2の正の屈折力を有するレンズ要素(E232)を通して光を伝えるステップとを含んだ投影方法。 - 請求項15乃至17のいずれか1項に記載の投影方法であって、
第3の正の屈折力を有するレンズ要素(E222)、第1の負の屈折力を有するレンズ要素(E223)、第2の負の屈折力を有するレンズ要素(E224)、及び第4の正の屈折力を有するレンズ要素(E225)を含んだ球面収差を低減するために配置された複ガウス型アナスチグマートを通して光を伝えるステップを更に含んだ投影方法。 - 請求項15乃至18のいずれか1項に記載の投影方法であって、
凹面鏡(E215)と少なくとも1つの負の屈折力を有するシュプマン型レンズ(E213、E214)とを有する反射屈折型アナスチグマートを通して光を伝えるステップを含んだ投影方法。 - 請求項19に記載の投影方法であって、
2つの負の屈折力を有するシュプマン型レンズ(E213、E214)を通して光を伝えるステップを含んだ投影方法。 - 請求項15乃至20のいずれか1項に記載の投影方法であって、
前記光は紫外光の光線である投影方法。 - 第1面(OP)に設定されたマスクを照明するための照明系と、前記マスクに形成されたパターンの像を第2面(IP)に設定された感光性基板上に形成するための請求項1乃至21のいずれか1項に記載の投影光学系とを有する露光装置。
- 第1面(OP)に設定されたマスクを照明するステップと、請求項1乃至21のいずれか1項に記載の投影光学系を介して前記マスクに形成されたパターンの像を第2面(IP)に設定された感光性基板上に投影露光するステップとを含む露光方法。
- 第1面(OP)の像を第2面(IP)上に投影するための投影光学系であって、
前記投影光学系は最も第2面側に配置された境界レンズを含む複数のレンズを有する光路を有し、前記境界レンズの前記第1面(OP)の面は正の屈折力を有し、かつ、屈折率1を有する前記光路中の雰囲気に対して、前記境界レンズと前記第2面(IP)との間の光路は1.1よりも大きい屈折率を有する媒質で満たされている投影光学系。 - 請求項24に記載の投影光学系であって、
前記境界レンズの第1面(OP)側の曲率をCbとし、光軸と有効結像領域の最外点との距離をDとし、前記境界レンズの前記第2面(IP)側の開口数をNAとするとき、
0.012<Cb・D/NA<0.475
の条件を満足する投影光学系。 - 請求項24又は25に記載の投影光学系であって、
前記境界レンズと前記第2面(IP)との間の光路中に少なくとも1つのほぼ無屈折力の光学部材(Lp)が配置され、かつ、前記境界レンズと前記光学部材との間の光路及び前記光学部材と前記第2面(IP)との間の光路は前記媒質で満たされている投影光学系。 - 請求項26に記載の投影光学系であって、
前記ほぼ無屈折力の少なくとも1つ光学部材は前記境界レンズと前記第2面(IP)との間の光路中に挿脱自在に配置されている投影光学系。 - 請求項26又は27に記載の投影光学系であって、前記ほぼ無屈折力の光学部材の姿勢は調整可能である投影光学系。
- 請求項26乃至28のいずれか1項に記載の投影光学系であって、
前記ほぼ無屈折力の光学部材の屈折力をPとし、前記光軸と前記有効結像領域の最外点との距離をDとするとき、
|P・D|<1.0×10-4
の条件を満足する投影光学系。 - 請求項24乃至29のいずれか1項に記載の投影光学系であって、
少なくとも1つの凹面反射鏡を有する反射屈折光学系である投影光学系。 - 請求項30に記載の投影光学系であって、
前記光軸に対して偏心した有効結像領域を有し、前記投影光学系の前記光路中に少なくとも1つの中間像が形成される投影光学系。 - 請求項31に記載の投影光学系であって、
前記少なくとも1つの凹面反射鏡を有し前記中間像を形成するための1つの結像光学系(G2)と、前記中間像からの光束に基づいて最終像を前記第2面(IP)上に形成するための他の結像光学系(G3)と、
前記1つの結像光学系と前記他の結像光学系との間の光路中に配置された偏向鏡とを有する投影光学系。 - 請求項32に記載の投影光学系であって、
前記光学系全体の倍率をMAとし、前記他の結像光学系(G3)の倍率をMG3とするとき、次の条件式
0.75<MA/MG3<1.1
を満足する投影光学系。 - 請求項31に記載の投影光学系であって、
前記第1面(OP)の第1中間像を形成するための第1結像光学系(G1)と、前記少なくとも1つの凹面反射鏡を有し前記第1中間像からの光束に基づいて第2中間像を形成するための第2結像光学系(G2)と、前記第2中間像からの光束に基づいて最終像を前記第2面(IP)上に形成するための第3結像光学系(G3)とを有し、
前記第1結像光学系と前記第2結像光学系との間の光路中に第1偏向鏡が配置され、前記第2結像光学系と前記第3結像光学系との間の光路中に第2偏向鏡が配置されている投影光学系。 - 請求項34に記載の投影光学系であって、
前記第1結像光学系の光軸と前記第3結像光学系の光軸とが一致している投影光学系。 - 請求項34又は35に記載の投影光学系であって、
前記光学系全体の倍率をMAとし、前記第3結像光学系(G3)の倍率をMG3とするとき、次の条件式
0.75<MA/MG3<1.1
を満足する投影光学系。 - 請求項32に記載の投影光学系であって、
前記他の結像光学系(G3)は開口絞りを含んでおり、かつ、前記開口絞りの前記第2面(IP)側に配置されたレンズ要素の数は5以下である投影光学系。 - 請求項37に記載の投影光学系であって、
前記第2面(IP)と前記第3結像光学系中の前記開口絞りとの間に配置された総てのレンズ要素は正の屈折力を有している投影光学系。 - 請求項37に記載の投影光学系であって、
前記開口絞りの前記第2面(IP)側に配置されたレンズ要素に負の屈折力を有するレンズ要素は含まれていない投影光学系。 - 請求項24乃至39のいずれか1項に記載の投影光学系であって、
前記第1面(OP)側の開口数が0.22以上である投影光学系。 - 請求項24乃至40のいずれか1項に記載の投影光学系であって、
前記媒質を通過する際に発生する光量損失が50%以下である投影光学系。 - 第1面(OP)に設定されたマスクを照明するための照明系と、前記マスクに形成されたパターンの像を前記第2面(IP)に設定された感光性基板上に形成するための請求項24乃至41のいずれか1項に記載の投影光学系とを有する露光装置。
- 第1面(OP)に設定されたマスクを照明するステップと、請求項24乃至41のいずれか1項に記載の投影光学系を介して前記マスクに形成されたパターンの像を第2面(IP)に設定された感光性基板上に投影露光するステップとを含む露光方法。
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Also Published As
Publication number | Publication date |
---|---|
US7619827B2 (en) | 2009-11-17 |
TW200426542A (en) | 2004-12-01 |
US7551362B2 (en) | 2009-06-23 |
EP1532489A2 (en) | 2005-05-25 |
US20080068573A1 (en) | 2008-03-20 |
AU2003256081A1 (en) | 2004-03-11 |
CN1668984A (zh) | 2005-09-14 |
TWI242691B (en) | 2005-11-01 |
WO2004019128A2 (en) | 2004-03-04 |
US7688517B2 (en) | 2010-03-30 |
US7362508B2 (en) | 2008-04-22 |
CN100462844C (zh) | 2009-02-18 |
TWI249082B (en) | 2006-02-11 |
US20080049336A1 (en) | 2008-02-28 |
US7701640B2 (en) | 2010-04-20 |
TW200403547A (en) | 2004-03-01 |
US20080049306A1 (en) | 2008-02-28 |
KR20050035890A (ko) | 2005-04-19 |
JP2010097221A (ja) | 2010-04-30 |
US20080068576A1 (en) | 2008-03-20 |
WO2004019128A3 (en) | 2004-10-28 |
US20080068724A1 (en) | 2008-03-20 |
AU2003256081A8 (en) | 2004-03-11 |
US20050248856A1 (en) | 2005-11-10 |
JP2010061159A (ja) | 2010-03-18 |
US20080094696A1 (en) | 2008-04-24 |
US7609455B2 (en) | 2009-10-27 |
US7580197B2 (en) | 2009-08-25 |
JP4803301B2 (ja) | 2011-10-26 |
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