CN1501173A - 光刻装置和器件制造方法 - Google Patents
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Abstract
在光刻投射装置中,密封构件围绕投射系统的末端元件和光刻投射装置基底台之间间隙。气密封在所述密封构件和所述基底的表面之间形成,以容纳间隙中的液体。
Description
技术领域
本发明涉及一种光刻投射装置,包括:
-用于提供辐射投射光束的辐射系统;
-用于支撑构图部件的支撑结构,所述构图部件用于根据理想的图案对投射光束进行构图;
-用于保持基底的基底台;
-用于将带图案的光束投射到基底的靶部上的投射系统;
-用于至少部分地将所述投射系统末端元件和所述基底之间的间隙填充液体的液体供给系统。
背景技术
这里使用的术语“构图部件”应广义地解释为能够给入射的辐射光束赋予带图案的截面的部件,其中所述图案与要在基底的靶部上形成的图案一致;本文中也使用术语“光阀”。一般地,所述图案与在靶部中形成的器件的特殊功能层相应,如集成电路或者其它器件(如下文)。这种构图部件的示例包括:
■掩模。掩模的概念在光刻中是公知的。它包括如二进制型、交替相移型、和衰减相移型的掩模类型,以及各种混合掩模类型。这种掩模在辐射光束中的布置使入射到掩模上的辐射能够根据掩模上的图案而选择性的被透射(在透射掩模的情况下)或者被反射(在反射掩模的情况下)。在使用掩模的情况下,支撑结构一般是一个掩模台,它能够保证掩模被保持在入射光束中的理想位置,并且如果需要该台会相对光束移动。
■程控反射镜阵列。这种设备的一个例子是具有一粘弹性控制层和一反射表面的矩阵可寻址表面。这种装置的理论基础是(例如)反射表面的寻址区域将入射光反射为衍射光,而非可寻址区域将入射光反射为非衍射光。用一个适当的滤光器,从反射的光束中过滤所述非衍射光,只保留衍射光;按照这种方式,光束根据矩阵可寻址表面的寻址图案而产生图案。程控反射镜阵列的另一实施例利用微小反射镜的矩阵排列,通过使用适当的局部电场,或者通过使用压电致动器装置,使得每个反射镜能够独立地关于一轴倾斜。再者,反射镜是矩阵可寻址的,由此已定址的反射镜以不同的方向将入射的辐射光束反射到无地址的反射镜上;按照这种方式,根据矩阵可寻址反射镜的定址图案对反射光束进行构图。可以用适当的电子装置进行该所需的矩阵寻址。在上述两种情况中,构图部件可包括一个或者多个程控反射镜阵列。反射镜阵列的更多信息可以从例如美国专利US5,296,891、美国专利US5,523,193、PCT专利申请WO98/38597和WO 98/33096中获得,这些文献在这里引入作为参照。在程控反射镜阵列的情况中,所述支撑结构可以是框架或者工作台,例如所述结构根据需要可以是固定的或者是可移动的。
■程控LCD阵列,例如由美国专利US 5,229,872给出的这种结构,它在这里引入作为参照。如上所述,在这种情况下支撑结构可以是框架或者工作台,例如所述结构根据需要可以是固定的或者是可移动的。
为简单起见,本文的其余部分在一定的情况下具体以掩模和掩模台为例;可是,在这样的例子中所讨论的一般原理应适用于上述更宽范围的构图部件。
光刻投影装置可以用于例如集成电路(IC)的制造。在这种情况下,构图部件可产生对应于IC每一层的电路图案,该图案可以成像在已涂敷辐射敏感材料(抗蚀剂)层的基底(硅片)的靶部上(例如包括一个或者多个电路小片(die))。一般的,单一的晶片将包含相邻靶部的整个网格,该相邻靶部由投影系统逐个相继辐射。在目前采用掩模台上的掩模进行构图的装置中,有两种不同类型的机器。一类光刻投影装置是,通过一次曝光靶部上的全部掩模图案而辐射每一靶部;这种装置通常称作晶片分档器。另一种装置(通常称作分步扫描装置)通过在投射光束下沿给定的参考方向(“扫描”方向)依次扫描掩模图案、并同时沿与该方向平行或者反平行的方向同步扫描基底台来辐射每一靶部;因为一般来说,投影系统有一个放大系数M(通常<1),因此对基底台的扫描速度V是对掩模台扫描速度的M倍。如这里描述的关于光刻设备的更多信息可以从例如美国专利US6,046,729中获得,该文献这里作为参考引入。
在用光刻投影装置的制造方法中,(例如在掩模中的)图案成像在至少部分由一层辐射敏感材料(抗蚀剂)覆盖的基底上。在这种成像步骤之前,可以对基底可进行各种处理,如涂底漆、涂敷抗蚀剂和软烘烤。在曝光后,可以对基底进行其它的处理,如曝光后烘烤(PEB),显影,硬烘烤和测量/检查成像特征。以这一系列工艺为基础,对例如IC的器件的单层形成图案。这种图案层然后可进行任何不同的处理,如蚀刻、离子注入(掺杂)、镀金属、氧化、化学-机械抛光等完成一单层所需的所有处理。如果需要多层,那么对每一新层重复全部步骤或者其变化。最终,在基底(晶片)上出现器件阵列。然后采用例如切割或者锯断的技术将这些器件彼此分开,单个器件可以安装在载体上,与管脚等连接。关于这些步骤的进一步信息可从例如Peter van Zant的
“微型 集成电路片制造:半导体加工实践入门(Microchip Fabrication:A Practical Guide toSemiconductor Processing)”一书(第三版,McGraw Hill Publishing Co.,1997,ISBN0-07-067250-4)中获得,这里作为参考引入。
为了简单起见,投影系统在下文称为“镜头”;可是,该术语应广义地解释为包含各种类型的投影系统,包括例如折射光学装置,反射光学装置,和反折射系统。辐射系统还可以包括根据这些设计类型中任一设计的操作部件,该操作部件用于操纵、整形或者控制辐射的投射光束,这种部件在下文还可共同地或者单独地称作“镜头”。另外,光刻装置可以具有两个或者多个基底台(和/或两个或者多个掩模台)。在这种“多级式”器件中,可以并行使用这些附加台,或者可以在一个或者多个台上进行准备步骤,而一个或者多个其它台用于曝光。例如在美国专利US5,969,441和WO98/40791中描述的二级光刻装置,这里作为参考引入。
已经提出了将光刻投射装置中的基底浸没在一种具有比较高折射率的液体中,比如水,以使其填充投射系统末端元件和基底之间的空间。这样做的目的是由于曝光射线在液体中具有更短的波长,从而能够对更小的特征成像。(也可以将液体的作用看作提高系统的有效NA。)
然而,将基底台浸入液体中意味着在扫描曝光过程中,必须加速大量的液体。这就需要附加的或者更强劲的马达,并且液体中的紊流会导致不良的和不可预知的影响。
在光刻投射装置中存在液体会随之产生一些问题。比如,溢出的液体将引起干扰干涉计的问题,以及如果光刻投射装置需要光束保持在真空中,那么将会破坏真空。此外,除非采取恰当的预防措施否则液体会很快用完。
浸没光刻术产生的更多的问题包括保持液体的深度恒定的难点以及将基底移至在末端投射系统元件之下的成像位置以及从成像位置移开的难点。并且,液体的污染(化学物质溶解其中引起的)以及液体温度的升高不利地影响了可实现的成像质量。
如果发生由于某种原因引起的计算机故障或者能源故障或者设备的失控的情况,需要采取一些手段以保护,特别是投射系统的光学元件。必须采取措施避免液体溢出到装置的其他组件上。
如果所使用的液体供给系统中液体具有自由表面的,需要采取措施以避免由于施加给液体供给系统的力而引起的在该自由表面上的波动的产生。波动会从移动的基底向投射系统传递振动。
WO99/49504公开了一种光刻装置,其中向投射透镜和晶片之间的间隙供给液体。当晶片在透镜之下-X方向上被扫描时,在透镜的+X侧供给液体,并且在-X侧排出液体。
发明内容
本发明的一个目的是提供一种光刻投射装置,其中在将平台(stage)移动过程中所必须加速的液体的容积最小化的同时,在基底和投射系统之间的间隙填充液体。
依照本发明在开始段中说明的光刻装置实现上述及其他发明目的,其特征在于所述液体供给系统包括:
■密封构件,沿所述投射系统末端元件和所述基底台之间所述间隙的边缘的至少一部分延伸;
■气密封装置,用于在所述密封构件和所述基底的表面之间形成气密封。
从而气密封装置在密封构件和基底之间形成非接触密封,使液体容纳在投射系统末端元件和基底之间的间隙中,甚至在扫描曝光过程中,基底在投射系统下移动的时候。
密封构件可以围绕间隙以闭合环路的形式提供,无论是圆形、矩形、或者其他形状,或者可以是不完全的,例如形成U形或甚至仅沿着间隙的一边延伸。如果密封构件是不完全的,当基底在投射系统下扫描时,应定位密封构件以封闭液体。
优选地,气密封装置是用于支撑所述密封构件的气体轴承。这具有液体供给系统的同一部分既可以用于轴承也可以用于密封投射系统末端元件和基底之间的间隙中的液体的优点,因此减少了密封构件的复杂性和重量。同样,能够继续应用先前在真空环境下使用气体轴承获得的经验。
优选地,气密封装置包括形成在与所述基底相对的所述密封构件的一个面上的气体入口以及第一气体出口,向所述气体入口供给有压力气体的装置以及用来从所述第一气体出口抽取气体的真空装置。更有选地,气体入口位于比所述第一气体出口从所述投射系统的光轴向外更远的位置。这样,在气体密封中的气体流动是向内的并且最有效地容纳液体。在这种情况下,气密封装置有利地还包括形成在密封构件与基底相对的表面中的第二气体出口,第一和第二气体出口形成在气体入口相对的两侧上。第二气体出口确保气体最小程度地从气体入口溢出到密封构件周围的环境中。这样就将光刻装置中气体溢出和对干涉计的干扰或者降低真空的风险减少到最小。
液体供给系统也可以包括用来测量密封构件的表面和基底之间的距离和/或基底上表面的外表构形的传感器。这样,控制装置可用于通过控制例如正向输送或反向输送方式的气密封装置,来改变密封构件表面和基底之间的距离。
装置还可以包括改变相对于表面的其余部分第一气体出口和最靠近光轴的表面的边缘之间的所述密封构件的所述表面的一部分的水平高度(level)的装置。这就使在容纳间隙中液体的压力,能够独立地受到入口下的压力的控制,使得基底上的密封构件的高度能够在不破坏保持间隙中液体的力的平衡下得到校正。另一种确保这个的方法是使用用于改变相对于表面的其余部分处于第一或第二气体出口和气体入口之间的表面的一部分的水平高度的装置。那三个系统可以以任何的组合方式使用。
另一种分开气密封装置的密封功能和负荷功能的方法是提供一个形成于密封构件比第一气体出口更靠近投射系统光轴的表面上的通道。该通道中的压力可以变化以容纳间隙中液体,然而进和出的气体可以用来改变密封构件在基底上的高度,这样,它们仅仅起到支撑密封构件的作用,并且即便需要,也只有很少的密封功能。
另一个有利的特征是在气体入口上设置多孔部件,用来均匀地分布流过气体入口区域的气体。
形成气体出入口是很便利的,所以每个气体出入口包含一个在所述密封构件相对于所述基底的所述表面上的凹槽和多个在间隔位置上通向所述凹槽的管道。
同样,优选所述密封构件和所述气密封装置内部的所述基底的表面之间的很小,以至于毛细管作用将液体吸入和/或阻止来自气密封装置的气体进入间隙。密封构件下面吸液体的毛细管力和将它推出去的气流之间的平衡形成了特别稳定的密封。
本发明的另一个目的是提供一种光刻投射装置,其中基底和投射系统之间的间隙充满了液体,同时将基底和投射系统之间的扰动力的传播最小化。
依照本发明在开始段中说明的光刻装置实现上述及其他发明目的,其特征在于所述间隙通过输送管与贮液器以液体方式连接,并且在垂直于液体流动方向的平面中,所述输送管的最小横截面面积至少是
其中ΔV是时间tmin内必须从所述间隙清除的液体的容积,L是输送管的长度,η是在所述间隙中液体的粘度,以及ΔPmax是在所述末端元件上的最大允许压力。
这个装置具有以下优点,能够完全地封闭液体,从而没有适合于产生波动的很大的自由表面,即间隙或者贮液器在顶部封闭并且贮液器中充满液体。这是因为在给定时间(用实验方法测量的撞击时间)内能够流过输送管的流体的量很大,足以避免当装置撞击时对投射系统的末端元件的破坏,因为在间隙中的压力增加到毁坏发生的水平之前,液体能够从输送管中溢出。当密封构件相对末端元件移动时,液体必须溢出,否则在末端元件向密封构件相对移动过程中,施加于末端元件上的流体静压会毁坏末端元件。
本发明的另一方面,提供一种在开始段中说明的光刻装置,特征在于液体供给系统还包括一个在所述液体供给系统中液体的上表面上的抑制装置,用于抑制波动的产生,并且包括压力释放装置。
这样,波动的产生能够通过抑制装置与液体上表面的接触而得到抑制。然而一旦发生撞击,液体仍旧能够从溢出以避免毁坏末端元件。
一种提供抑制装置的方法是通过弹性薄膜或者可替代地在间隙中液体的上表面放置与间隙中的液体不融和的高粘度液体。在每一个例子中压力释放功能性是通过抑制装置的弹性提供的。
本发明的另一个方面提供一种器件制造方法,包括以下步骤:
-提供至少部分覆盖一层辐射敏感材料的基底;
-利用辐射系统提供辐射投射射束;
-利用构图部件使该投射射束在横截面上具有图案;
-在辐射敏感材料层的靶部上投射该带有图案的辐射投射射束;
-提供液体充满基底和所述投射步骤中使用的投射系统末端元件之间的间隙;
或者特征在于:
-在沿所述间隙边界的至少一部分延伸的密封构件和所述基底的表面之间形成气密封;
或者
-提供通过输送管与所述间隙以液体方式连接的贮液器;以及
-确保在垂直于液体流动方向的平面中所述输送管的最小横截面面积为其中ΔV是时间tmin内必须从所述间隙清除的液体的容积,L是输送管的长度,η是在所述间隙中液体的粘度,以及ΔPmax是在所述末端元件上的最大允许压力;
或者其特征在于:
-用抑制装置抑制在所述液体上波动的产生并且允许释放所述液体的压力。
在本申请中,本发明的装置具体用于制造IC,但是应该明确理解这些装置可能具有其它应用。例如,它可用于制造集成光学系统、用于磁畴存储器、液晶显示板、薄膜磁头等的引导和检测图案等。本领域的技术人员将理解,在这种可替换的用途范围中,在说明书中任何术语“划线板”、“晶片”或者“电路小片(die)”的使用应认为分别可以由更普通的术语“掩模”、“基底”和“靶部”代替。
在本文件中,使用的术语“辐射”和“光束”包含所有类型的电磁辐射,包括紫外辐射(例如具有365、248、193、157或者126nm的波长)和EUV(远紫外辐射,例如具有5-20nm的波长范围)。
附图说明
现在仅通过举例的方式,参照附图描述本发明的实施方案,其中:
图1表示本发明实施方案的光刻投射装置;
图2表示本发明第一实施方案的贮液器;
图3是本发明第一实施方案的贮液器的局部放大图;
图4表示本发明第二实施方案的贮液器;
图5是本发明第二实施方案的贮液器的局部放大图;
图6是本发明第三实施方案的贮液器的放大图;
图7表示本发明第四实施方案的贮液器;
图8是本发明第四实施方案的贮液器的局部放大图;
图9表示本发明第五实施方案的贮液器;
图10表示本发明第六实施方案的贮液器;
图11表示第六实施方案的密封构件下侧的平面图;
图12表示第七实施方案的密封构件下侧的平面图;
图13表示第七实施方案的贮液器的横截面;
图14表示第八实施方案的贮液器的横截面;
图15表示第九实施方案的贮液器的横截面;
图16表示第九实施方案另一种贮液器的横截面;
图17表示第十实施方案的贮液器的横截面。
在图中相应的附图标记表示相应的部件。
具体实施方式
实施方案1
图1示意性地表示了本发明一具体实施方案的一光刻投影装置。该装置包括:
辐射系统Ex,IL,用于提供辐射投射光束PB(例如DUV辐射),在该具体的例子中该辐射系统也包括辐射源LA;
第一目标台(掩模台)MT,设有用于保持掩模MA(例如划线板)的掩模保持器,并与用于将该掩模相对于物体PL精确定位的第一定位装置连接;
第二目标台(基底台)WT,设有用于保持基底W(例如涂敷抗蚀剂的硅晶片)的基底保持器,并与用于将基底相对于物体PL精确定位的第二定位装置连接;
投射系统(“镜头”)PL(例如,折射透镜系统),用于将掩模MA的辐射部分成像在基底W的靶部C(例如包括一个或多个电路小片(die))上。
如上所述,该装置是透射型的(即具有透射掩模)。但是该装置通常也可以例如是折射型的(具有折射掩模)。或者该装置可以采用其他类型的构图部件,例如上述程控反射镜阵列类型。
辐射源LA(例如受激准分子激光器)产生辐射束。该光束直接或经过如扩束器Ex的调节装置后,再照射到照射系统(照射器)IL上。照射器IL包括调节装置AM,用于设定光束强度分布的外和/或内径向量(通常分别称为σ-外和σ-内)。另外,它一般包括各种其它部件,如积分器IN和聚光器CO。按照这种方式,照射到掩模MA上的光束PB在其横截面具有理想的均匀性和强度分布。
应该注意,图1中的辐射源LA可以置于光刻投射装置的壳体中(例如当源是汞灯时经常是这种情况),但也可以远离光刻投射装置,其产生的辐射光束被(例如通过适当的定向反射镜的帮助)引导至该装置中;当光源LA是准分子激光器时通常是后面的那种情况。本发明和权利要求包含这两种方案。
光束PB然后与保持在掩膜台MT上的程控构图部件MA相交。经过掩模MA之后的光束PB通过镜头PL,该镜头将光束PB聚焦在基底W的靶部C上。在第二定位装置(和干涉测量装置IF)的辅助下,基底台WT可以精确地移动,例如在光束PB的光路中定位不同的靶部C。类似的,例如在从掩模库中机械取出掩模MA后或在扫描期间,可以使用第一定位装置将掩模MA相对光束PB的光路进行精确定位。一般地,用图1中未明确显示的长冲程模块(粗略定位)和短行程模块(精确定位),可以实现目标台MT、WT的移动。可是,在晶片分档器中(与分步扫描装置相对),掩膜台MT可仅与短冲程执行装置连接,或者固定。
所示的装置可以按照二种不同模式使用:
在步进模式中,掩模台MT基本保持不动,整个掩模图像被一次投射(即单“闪”)到靶部C上。然后基底台WT沿x和/或y方向移动,以使不同的靶部C能够由光束PB照射。
在扫描模式中,基本为相同的情况,但是所给的靶部C没有暴露在单“闪”中。取而代之的是,掩模台MT沿给定的方向(所谓的“扫描方向,例如y方向”)以速度v移动,以使投射光束PB扫描整个掩模图像;同时,基底台WT沿相同或者相反的方向以速度V=Mv同时移动,其中M是镜头PL的放大率(通常M=1/4或1/5)。在这种方式中,可以曝光相当大的靶部C,而没有牺牲分辨率。
图2示出了在投射系统和基底台之间的贮液器10。贮液器10充满了通过入口/出口输送管13提供的具有比较高折射率的液体11,例如水。液体具有使投射束的辐射在液体中比在空气中或真空中具有更短的波长,可以分辨更小的特征的作用。众所周知,投射系统的分辨率极限,特别地,由投射光束的波长和系统的数值孔径决定。液体的存在也可以看作提高了有效数值孔径。此外,对于确定的数值孔径,液体对增加景深有效。
贮液器10在投射系统像场周围形成对基底的非接触式密封,从而限制液体充满基底表面和投射系统末端元件之间的空间。贮液器由位于投射系统PL末端元件下方并且环绕该元件的密封构件12形成。液体进入投射系统下方并且在密封构件构件12之内的空间。密封构件12在投射系统末端元件之上略微延伸,并且液体水平面升至末端元件之上从而提供了液体缓冲区。密封构件12具有在其上端部最好严密符合投射系统或者其末端元件的形状的内边缘,并且可以是例如圆形。在底部,内边缘严密符合像场的形状,例如矩形,尽管并不必需这样。
通过在密封构件12底部和基底W表面之间的气密封16将液体封闭在贮液器中。气密封由气体形成,比如空气或者人造空气,但优选N2或者另一种惰性气体,在压力下,经由入口15提供给密封构件12和基底之间的间隙,并由第一出口14排出。设置在气体入口15的过压,第一出口14的真空级以及缝隙的几何形状,从而具有向内的高速空气流封闭液体。更详细的示于图3中。
气密封由两个环形凹槽18、19形成,环形凹槽通过一系列围绕凹槽间隔开的小通道分别与第一入口15和第一出口14相连接。入口和出口14,15可以是围绕密封构件24圆周的多个不连续的漏孔,也可以是连续的槽或缝。在密封构件中,可以在每个入口和出口提供很大的环形腔从而形成歧管(manifold)。气密封通过当作气体轴承使用也可以有效支撑密封构件12。
气体入口15外侧上的缝隙G1,最好是小而长的为气体向外流动提供阻力,但是不必需这样。在入口15径向的缝隙G2稍大以确保围绕密封构件足够的气体分布,入口15由围绕密封构件的许多小孔组成。选择缝隙G3以控制流过密封的气体。缝隙G4更大以提供良好的真空分布,出口14由和入口15相同方式的多个小孔组成。缝隙G5很小从而阻止气体/氧气扩散到间隙中的液体中,以阻止大容量液体进入并破坏真空,并且确保毛细管起作用一直将它充满液体。
气密封因此是将液体抽入缝隙的毛细管力和将液体推出的气流之间的平衡。由于缝隙从G5到G4变宽,毛细管力减少而气流增加以使液体边界处于这个区域中并且甚至当基底在投射系统PL之下移动的时候液体边界也将稳定。
在G2处的入口和在G4处的出口之间的压力差以及缝隙G3的大小和几何形状,决定了流过密封构件16的气体并且根据特定的实施方案决定。然而,如果缝隙G3的长度短并且在G2处的绝对压力是在G4处的两倍,就会实现一个可能的优点,在这种情况下,气体速度将是气体中声音的速度并且不能再升高了。从而获得稳定的气流。
通过减少气体入口压力,并且使液体进入缝隙G4并由真空系统吸出,气体出口系统也能用来将液体完全从系统中清除,可以很容易地设置真空系统以处理液体以及用来形成封层的气体。控制气密封中的压力也能够用来确保通过缝隙G5的液体的流动,以至于在该缝隙中,当基底移动时由于摩擦而加热的液体不会扰乱在投射系统下的空间中液体的温度。
应当选择环绕气体入口和出口的密封构件的形状以尽可能地提供层流从而减少紊流和振动。同样,应对气流进行设置以使在液体界面上流动方向的改变尽可能地大以提供最大的封闭液体的力。
液体供给系统循环贮液器10中的液体以使新鲜的液体供应到贮液器10中。
气密封16能够产生足够大的力以支撑密封构件12。的确,向基底倾斜密封构件12,以使由密封构件12支撑的有效重量更大可能是必要的。密封构件12无论如何都会保持在XY平面(垂直于光轴)内一个相对于投射系统并在其之下,但与投射系统分离的基本上固定的位置。密封构件12可以在Z方向和Rx和Ry自由地移动。
实施方案2
第二实施方案示于图4和图5中,除了以下描述的之外均与第一实施方案相同。
在本实施方案中,相对于第一气体出口14,在气体入口15另一侧提供第二气体出口216。这样任何从气体入口15向外远离装置的光轴方向溢出的气体被与真空源相连接的第二气体出口216吸收。这样就防止了气体从气密封溢出,所以就不会干扰例如干涉计读数或者干扰投射系统和/或基底所在的真空。
使用两个气体出口的实施方案的另一个优点是这种设计与在先前用于光刻投射装置中的空气轴承的设计非常相似。因此在那些空气轴承中所获得的经验可以直接应用于该实施方案的气密封。第二实施方案中的气密封特别适合用作空气轴承,也可用作密封装置,以至于它能够用来支撑密封构件12的重量。
更有利的是,可以提供传感器用来测量密封构件12的底面和基底W之间的距离,或者基底W上表面的外表构形(topography)。然后可以使用控制装置改变应用于气体出入口14、15、216的压力从而改变封闭贮液器中液体11的压力P2和支撑密封构件12的压力P1和P3。因此可以改变密封构件12和基底W之间的距离D或者将其保持在恒定距离上。相同的控制装置也可以用来保持密封构件12水平。控制装置可以通过前馈或反馈控制回路控制。
图5详细地示出了如何调节气密封以独立地控制保持贮液器中液体11的压力P2以及支撑密封构件12的压力P3。这种附加的控制是有利的,因为它提供了一种在工作过程中将液体损失减到最小的方法。第二实施方案允许独立地控制压力P2和P3以解决在曝光过程中的不同的条件。不同的条件可能是单位时间内不同的液体损失水平,这是由于不同扫描速度或者可能由于基底W的边缘被密封构件12重叠造成的。这可以通过提供改变密封构件12面对基底W的表面的离散部分到基底W的距离的装置来实现。这些部分包括第一气体出口14和密封构件12距离光轴最近的边缘之间的部分220,气体入口15和第一气体出口14之间的部分230,以及第二气体出口216和气体入口15之间的部分240。可以利用比如压电驱动器驱动这些部分向着或者远离基底W移动。也就是说密封构件12的底面可以包括压电驱动器(优选堆叠(stacks)的),该压电驱动器通过利用它们之间的电压差能够伸长/缩短。也可以使用其他的机械装置。
在气体入口15下产生的压力P3由施加于气体入口15的气体压力P5、分别施加于第一和第二气体出口14和216的气体压力P6和P4、以及基底W和密封构件12面对基底W的底面之间的距离D决定。同样气体入口和出口之间的水平距离也有影响。
用压力P3补偿密封构件12的重量,以使密封构件12停留在离晶片W为D的距离上。D的减小导致P3的增加,并且D的增加将导致P3的减小。因此这是一个自调节系统。
由于压力P3为恒定推力,只能通过压力P4、P5、P6调节距离D。然而,P5、P6和D的组合产生将液体11保持在贮液器中的压力P2。在给定的压力水平下,能够计算从液体容器中溢出的液体的量并且液体中的压力PLIQ也同样重要。如果PLIQ大于P2,液体从贮液器中溢出,如果PLIQ小于P2,在液体中就会出现不想要的气泡。期望试图将P2保持在一个稍微小于PLIQ的值,以确保没有气泡在液体中形成,但也确保了当这些液体需要替换时没有太多的液体溢出。优选利用恒定值D就能全部实现。如果部分220和晶片W之间的距离D1改变,从贮液器中溢出的液体的量就会显著改变,溢出液体的量的改变与距离D1的平方相对应。所需的距离变化仅仅是1mm量级的,优选10μm,并且能够轻易地由具有100V量级或更高的工作电压的压电堆叠(piezoelectricstack)提供。
另外,通过在部分230的底部放置压电元件可以调整能够溢出的液体的量。改变距离D2有效地改变了压力P2。但是,为了保持D恒定,这种解决方案需要调整气体入口15处的压力P5。
当然,部分240较低部分和基底W之间的距离D3也能够通过类似的方法改变,并且能够用于独立地调整P2和P3。可以理解,压力P4、P5和P6以及距离D1、D2和D3都能够独立地或组合在一起被调整,以达到所需要的P2和P3的变化。
的确第二实施方案用于对贮液器10中液体量的有效管理特别的有效。没有基底W被成像的投射装置的备用状态,可以是贮液器10中没有液体,但气密封是起作用的从而支撑密封构件12。在基底W放好之后,液体注入贮液器10。继而使基底W成像。在基底W移开之前,就能将来自贮液器的液体清除。在最后的基底曝光之后,贮液器10中的液体将会清除。只要清除了液体,必须实施气体净化以干燥先前液体占据的区域。如上所述,在根据第二实施方案的装置中,通过改变P2同时保持P3恒定,显然能够轻易地清除液体。在其他实施方案中通过改变P5和P6(如果必要或合适的话还有P4)也能够达到相似的效果。
实施方案3
如图6所示,作为第二实施方案可选择的或更进一步的发展,可以在密封构件12面对基底W的面上,第一气体出口14内部(即距离投射系统的光轴更近)提供通道320。通道320可以具有与气体出入口14、15、216相同的结构。
利用通道320,压力P2可以与压力P3相独立地改变。或者,通过将通道向贮液器10中液体液位之上的环境压力开放,在工作过程中贮液器的液体消耗大大地减少。已经结合第二实施方案对本实施方案进行了阐述,然而通道320可以结合任何的其他实施方案使用,特别是第一实施方案。另一个优点是气体入口15和气体出口14(以及对于某些实施方案的第二气体出口216)不会被干扰。
此外,尽管仅仅解释了三个元件,但任何数量的通道能够并入密封构件12与基底W相对的面中,每个通道有一个压力,以改进刚度,液体消耗,稳定性或者液体供给系统的其他性质。
实施方案4
如图7和8所示的第四实施方案除了以下描述的均与第一实施方案相同。然而,第四实施方案也可以有利地与描述过的任何其他实施方案共同使用。
在第四实施方案中,多孔部件410,优选多孔碳素或者多孔陶瓷部件,贴附于气体离开密封构件12底面的气体入口15。多孔部件的底部最好与密封构件的底部共面。这种多孔碳素部件410对于不完全平坦的表面(本例中指基底W)不灵敏,并且离开入口14的气体在整个入口的出口上很好地分布。当密封构件12部分地位于基底边缘之上时,由于在该点气封层所遇到的表面是不平坦的,通过使用多孔部件410而获得的优点也是显而易见的。
在第四实施方案的另一种形式中,多孔部件410可以设置在真空通道14中。应当选择多孔部件410具有的多孔性以保持处于压力之下同时防止无法接受的压力损失。当对基底W的边缘成像时以及气体轴承在基底W的边缘上移动时这是有利的,因为尽管在边缘位置的预载力可能会损失,然而真空通道不会被大量及可变的气体污染,大大地减少了在预载中的变化,因而减少了间隙和台上的力的变化。
实施方案5
所有上面描述的实施方案典型地具有贮液器10中的具有自由表面的液体,该液体暴露于气体,比如空气。这是为了防止投射系统PL的末端元件在投射系统的流体静压力增大引起撞击的情况下造成的损坏。在撞击过程中,贮液器10中的液体是不封闭的,以至于当投射系统PL对着液体移动时,液体将轻易地让步,即被迫上升。这种解决方案的缺点是工作过程中会在自由表面出现表面波动,从而自基底W向投射系统PL传递不想要的干扰力。
解决这个问题的一个方法是确保贮液器10完全地容纳在密封构件中,特别是上表面。然后通过输送管从辅助贮液器向贮液器10供应液体。辅助贮液器可以具有不封闭的上表面,在撞击过程中促使液体通过输送管进入辅助贮液器,从而可以避免投射系统上的第一贮液器10中巨大流体静压力的增长。
在这样一个封闭的系统中,通过确保连接贮液器的输送管具有与半径为以下等式的输送管相等的横截面积,避免了投射系统上液体压力的局部增长,
其中R是输送管半径,ΔV是在时间t内必须从贮液器10中清除的液体的容积,L是输送管的长度,η是液体的粘度,以及ΔP是辅助贮液器和主贮液器10之间的压力差。假设基底台能以0.2米/秒(实验测量)的速度撞击,并且ΔPmax为104Pa(大约是投射系统的末端元件在毁坏之前能够经受的最大压力),对于0.2m的输送管长度,所需导管半径约为2.5毫米。优选输送管的有效半径是公式所给的最小值的至少两倍。
另一种避免贮液器液体中波动形成同时仍然确保在撞击中投射系统PL得到保护的方法是在贮液器10中液体的顶面上为液体的自由表面提供抑制薄膜510。这个解决方案需要安全装置515以在没有过高的压力产生的撞击情况下允许液体溢出。一个解决方案如图9所示。抑制薄膜可以以这样的方法由贴附于密封构件12壁或者投射系统的弹性材料制成:在液体中的压力达到预定允许的最大值之前,液体可以使弹性抑制薄膜510变形,这样液体能够分别从投射系统PL和抑制薄膜510之间或者抑制薄膜和密封构件之间溢出。因此在撞击中,不破坏投射系统PL液体就能从安全薄膜上溢出。对于这个实施方案,显然优选在抑制薄膜之上具有一个至少为贮液器10容积的空间。这样弹性薄膜足够硬以阻止贮液器10中液体上表面的波动的形成,但不足以硬到一旦液体达到预定流体静压力时阻止液体溢出的程度。通过使用压力阀515与更硬的抑制薄膜结合能够达到相同的效果,该压力阀在预定压力之上允许液体自由流动。
抑制装置的另一种形式是在贮液器10中液体的上自由表面放置高粘度液体。这将会抑制表面波动的形成同时在撞击情况下允许液体溢出不阻挡投射系统PL。显而易见,高粘度液体必须不能和空间10中使用的液体融和。
另一个可供选择的液体抑制装置510是它包括网孔。这样能将液体上表面分为具有更小面积的几部分。这样,就可以避免由于共振而增大并且干扰投射系统的大表面波动的产生,因为几部分的表面积和网孔开口相等使大表面波动的产生得到了有效的抑制。同样,由于网孔允许液体流过它的开口,为在撞击情况下投射系统的保护提供了一种有效的压力释放机构。
实施方案6
如图10和11所示的第六实施方案除了以下描述的均与第一实施方案相同。第六实施方案利用了先前实施方案中的几个思想。
如其他实施方案中,浸没液体11由位于投射系统末端元件之下并将其围绕的密封构件12封闭在投射系统PL之下的区域。
密封构件12和基底W之间的气密封由三种形式的出入口形成。密封构件一般由出口614、入口615和附加入口617组成。这些出入口放置成出口614距离投射系统PL最近,在出口614外的附加入口617以及离投射系统PL最远的入口615。入口615包括空气轴承,该空气轴承通过环形腔622向面对基底W的密封构件12表面上的多个出口孔620提供气体。离开出口620的空气的力既支撑密封构件12至少部分重量,并且也提供朝向出口614的空气流以帮助密封浸没液体,以将其封闭在投射系统PL下局部区域。腔622的作用是使离散的气体供给孔625以均匀的压力在出口孔620提供气体。出口孔620直径约为0.25mm并且近似有54个出口孔620。封闭在出口孔620和腔622之间的流动中存在量级差,以确保均匀流动流出所有出口洞620,尽管仅提供少数量或者甚至只有一个主供给孔625。
离开出口620的空气既向内径向流动又向外径向流动。向内径向流动到出口614的空气有效地在密封构件12和基底W之间形成密封。但是,已经发现如果由附加入口617提供附加空气流,就会改进密封。通道630连接到气体源,比如大气。来自入口615向内径向流动的空气流有效地把来自附加入口617的附加气体向出口614拉。
在通道630末端提供的环形凹槽633(而不是一连串离散的入口)确保在凹槽633的最里面的边缘和出口614之间的密封气流均匀围绕整个圆周。凹槽典型地为2.5mm宽并且高度也近似。
凹槽633的最里面边缘635如图所示,具有半径以确保气体通过通道630向出口614平滑流动。
出口614也具有连续的凹槽640,大约0.7mm高,6~7mm宽。凹槽640最外部边缘642为有棱角的,基本上90度的边,使气体的流动,特别是附加入口630外的气体的流动加速,以加强气密封的效果。凹槽640具有多个通入环形腔647,并由此达到离散出口通道649的出口孔645。多个出口孔645直径约为1mm,以使通过出口孔645的水滴分解为更小的水滴。
通过连接于附加入口617的校正阀638可以调整密封构件12的液体移动的效果。阀638有效地校正调整通过附加入口617的流动从而改变通过出口614的气密封12的液体移动的效果。
密封构件的整个直径为100mm量级。
图11示出了图10的密封构件12下侧的平面图。可以看出,入口615以多个离散入口孔620的方式提供。优点在于利用主入口615的凹槽,由于凹槽作为空气轴承具有容量(由于气体可压缩的性质),使得在这样的系统中会产生振动。小直径入口孔620在其中具有更低的气体量,并且因此更少遇到由于容量引起的问题。
使用凹槽633形式的附加入口617可以用来确保围绕密封构件12整个圆周的连续的气流,当仅使用离散入口孔620时可能不是必需的。由于提供了能够有效均匀排出气流的凹槽640,如腔647和622,提供如离散实体的出口645也不是问题了。
液体的入口没有在图10和11的密封构件12中示出。液体可以以如在前实施方案中所阐述的相同方式提供,或者可以选择在欧洲专利申请No.03256820.6和03256809.9中所描述的任何液体入口和出口。
实施方案7
第七实施方案中除了以下描述的均与第六实施方案相同。图12是与示于图11中的密封构件相似的密封构件12下侧的平面图。在图12中,密封构件没有提供如在第六实施方案中的附加入口,尽管可以选择加上。
第七实施方案的密封构件12包括由入口孔720形成的气体轴承715,该气体轴承的整体设计和第六实施方案中的一样。入口714包括仅有两个分别通向气体源和真空源的通道745、747的环形凹槽740。这样就建立了从连接到通道745的气体源向连接到通道747的真空源的高速气体流。通过这种高速气体流,浸没液体能够更有效地排出。此外,通过在真空腔中建立更大受限制的真空流动,由于基底W之上的密封构件12的高度变化或者表面上其他泄漏源引起的流量波动将不会影响为气体轴承提供预载的真空腔压力。
实施方案8
将联系附图14对第八实施方案进行描述,除以下描述的均与第一实施方案相同。
从图14中看出,第八实施方案和第一实施方案一样,密封构件12具有入口815和出口814。但是,提供了设置成可以形成气体喷射流的附加入口817,该气体喷射可以提高在出口14之下或在出口14向外径向边缘上基底W表面上的气体速度,使浸没液体能够更有效地从基底W的表面清除。附加入口817具有由喷嘴所提供的出口,该喷嘴以一个朝投射系统PL向内径向的角度直接朝向基底W。这样,由于附加入口817确保了具有更高空气速度的气体与基底表面相接触,改善了在入口815和出口814之间并且基底表面具有速度为0的简单抛物线速度分布的不能从晶片移除最后的几微米液体的不同的气层流动(具有大约300的雷诺兹(Reynolds)数)。
从图14中可以看出,附加入口817的出口喷嘴在出口814径向向外,但距离出口814比距离入口815更近。
实施方案9
图15和16示出了第九实施方案,除以下描述的均与第一实施方案相同。
在第九实施方案中,改变面对基底W的密封构件12的底表面中的出口914的口以提高进入出口914中的空气速度。这是通过减少入口915的口的大小同时保持出口914的通道大小不变来实现的。这是通过将密封构件12的材料向通道的中心延伸以形成外部附加部分940以及内部附加部分950从而提供更小的口来实现的。外部附加部分940小于内部附加部分950并且在两个部分940,950之间的间隙大约比出口914其余部分小20倍。口宽大约为100~300um。
图16中示出了第九实施方案另一种可供选择的形式,其中给出了与第八实施方案中的附加入口817相似的附加入口917。然而,在这个例子中,附加入口917提供了基本上与基底W的表面平行的气流喷射,因此加速了进入出口914的口的气体。
实施方案10
图17示出第十实施方案,除以下描述的均与第一实施方案相同。
在第十实施方案中,依照与第八实施方案中相同的原理,通过增加在基底W表面上气体的速度,改进液体清除的效率。离开入口1015并且朝出口1014向内径向移动的气体在环形凹槽1018的下面通过。如所述的,凹槽的作用是使气体在它的径向最外侧进入凹槽并且在径向向内侧以一个朝向基底W的角度离开凹槽,因此增加了在出口1014入口处的基底的表面上气体的速度并且提高了液体清除的效率。
需要明确的是任何一个实施方案中的特征都能够与任何其他实施方案中的一些或全部特征结合使用。
以上已描述本发明的具体实施例,但应当理解本发明除上述之外,可以采用其他方式进行实施。本说明不作为本发明的限定。
Claims (29)
1.一种光刻投射装置,包括:
-用于提供辐射投射光束的辐射系统;
-用于支撑构图部件的支撑结构,所述构图部件用于根据理想的图案对投射光束进行构图;
-用于保持基底的基底台;
-用于将带图案的光束投射到基底的靶部上的投射系统;
-用于至少部分地将所述投射系统的末端元件和所述基底之间的间隙填充液体的液体供给系统,特征在于所述液体供给系统包括:
-在沿所述投射系统末端元件和所述基底台之间的所述间隙的边缘的至少一部分延伸的密封构件;
-用于在所述密封构件和所述基底表面之间形成气密封的气密封装置。
2.根据权利要求1的装置,其中所述气密封装置是用来在所述基底上支撑所述密封构件的气体轴承。
3.根据权利要求1或2的装置,其中所述气密封装置包括在所述密封构件与所述基底相对的一个面中形成的气体入口和第一气体出口,用于向所述气体入口供给有压强气体的装置以及用于从所述第一气体出口抽取气体的真空装置。
4.根据权利要求3的装置,还包括位于所述第一气体出口和所述气体入口之间并连接到气体源的附加入口。
5.根据权利要求4的装置,其中所述附加入口包括在所述密封构件面对所述基底的表面中的连续环形凹槽。
6.根据权利要求5的装置,其中所述凹槽径向最里面的角具有半径。
7.根据权利要求3-6中的任一装置,其中所述第一气体出口包括在所述密封构件面对所述基底的表面中的连续环形凹槽。
8.根据权利要求3-7中的任一装置,其中所述第一气体出口和/或所述气体入口包括分别在所述供给装置和所述真空装置之间的腔,以及在所述表面上的所述入口或出口的开口,在所述表面上,腔提供比所述开口更低的流动限制。
9.根据权利要求3-8中的任一装置,其中所述气体入口包括在所述密封构件面对所述基底的表面中的一连串离散开口。
10.根据权利要求3-9中的任一装置,其中多孔构件设置在所述气体入口之上,用于均匀地分配在所述气体入口区域上的气流。
11.根据权利要求3-10中的任一装置,其中所述密封构件还包括在所述密封构件与所述基底相对的所述面上形成的第二气体出口,所述第一和第二气体出口形成在所述气体入口的相对两侧上。
12.根据权利要求3-11中的任一装置,还包括用于改变相对于所述面的其余部分所述第一气体出口和所述气体入口之间的所述面的一部分的高度的装置。
13.根据权利要求3-12中的任一装置,还包括用于改变相对于所述面的其余部分所述第一气体出口和距离所述光轴最近的所述面的边缘之间的所述面的一部分的高度的装置。
14.根据权利要求3-13中的任一装置,其中所述气密封装置包括形成在所述面上并位于比所述第一气体出口更靠近投射系统光轴处的通道。
15.根据权利要求14的装置,其中所述通道是第二气体入口。
16.根据权利要求15的装置,其中所述通道向所述间隙中液体高度之上的环境敞开。
17.根据权利要求3-16中的任一装置,其中所述气体入口比所述第一气体出口位于从所述投射系统光轴向外更远处。
18.根据权利要求3-17中的任一装置,其中所述每个气体入口和出口包括在所述密封构件相对于所述基底的所述面上的凹槽,以及多个间隔放置的导入所述凹槽的的导管。
19.根据权利要求1-18中的任一装置,还包括用于测量所述密封构件的所述面和所述基底之间距离,和/或所述基底的表面构形的传感器。
20.根据权利要求1-19中的任一装置,还包括控制所述气密封装置中的气体压力从而控制在所述密封构件和所述基底之间的刚度,和/或所述密封构件和所述基底之间的距离的控制装置。
21.根据任一在前的权利要求的装置,其中在所述密封构件和所述气密封装置内部的所述基底表面之间的间隙很小,以致于毛细管作用将液体吸入间隙和/或阻止气体从所述气密封装置进入到所述投射系统和所述基底之间的所述间隙中。
22.根据任一在前的权利要求的装置,其中所述密封构件围绕所述投射系统和所述基底之间的所述间隙形成封闭环路。
24.根据权利要求23的装置,其中所述间隙是封闭的,所以当液体出现在所述间隙中时,所述液体不具有自由上表面。
25.一种光刻投射装置,包括:
-用于提供辐射投射光束的辐射系统;
-用于支撑构图部件的支撑结构,所述构图部件用于根据理想的图案对投射光束进行构图;
-用于保持基底的基底台;
-用于将带图案的光束投射到基底的靶部上的投射系统;
-用于至少部分地将所述投射系统末端元件和所述基底之间的间隙填充液体的液体供给系统,
其特征在于所述液体供给系统还包括在所述液体供给系统中液体的顶面上,用于抑制波动产生的抑制装置并且包括压力释放装置。
26.根据权利要求25的装置,其中所述抑制装置包括弹性薄膜。
27.根据权利要求25或26的装置,其中所述抑制装置包括网状物,以使所述液体的所述顶面的最大面积与网状物的开口相等。
28.根据权利要求25、26或27的装置,其中所述抑制装置包括允许其中的某个压力之上的液体通过的安全阀。
29.根据权利要求25的装置,其中所述抑制装置是不能与所述液体融和的高粘度液体。
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US10620545B2 (en) | 2020-04-14 |
US20190265596A1 (en) | 2019-08-29 |
TWI232357B (en) | 2005-05-11 |
JP2010135857A (ja) | 2010-06-17 |
SG121818A1 (en) | 2006-05-26 |
US6952253B2 (en) | 2005-10-04 |
CN100470367C (zh) | 2009-03-18 |
US20150362844A1 (en) | 2015-12-17 |
US7388648B2 (en) | 2008-06-17 |
US20090002652A1 (en) | 2009-01-01 |
KR100585476B1 (ko) | 2006-06-07 |
JP5017403B2 (ja) | 2012-09-05 |
JP2007142460A (ja) | 2007-06-07 |
JP5480880B2 (ja) | 2014-04-23 |
US20110228241A1 (en) | 2011-09-22 |
US7982850B2 (en) | 2011-07-19 |
US20080218726A1 (en) | 2008-09-11 |
SG2010050110A (en) | 2014-06-27 |
US9091940B2 (en) | 2015-07-28 |
US20130301017A1 (en) | 2013-11-14 |
KR20040044119A (ko) | 2004-05-27 |
JP3977324B2 (ja) | 2007-09-19 |
US8208120B2 (en) | 2012-06-26 |
JP4567013B2 (ja) | 2010-10-20 |
JP2004289126A (ja) | 2004-10-14 |
US8797503B2 (en) | 2014-08-05 |
JP2012064979A (ja) | 2012-03-29 |
US10222706B2 (en) | 2019-03-05 |
US20040207824A1 (en) | 2004-10-21 |
TW200426521A (en) | 2004-12-01 |
US20060023189A1 (en) | 2006-02-02 |
SG135052A1 (en) | 2007-09-28 |
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