JP2014525091A - 生体撮像装置および関連方法 - Google Patents

生体撮像装置および関連方法 Download PDF

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Publication number
JP2014525091A
JP2014525091A JP2014520387A JP2014520387A JP2014525091A JP 2014525091 A JP2014525091 A JP 2014525091A JP 2014520387 A JP2014520387 A JP 2014520387A JP 2014520387 A JP2014520387 A JP 2014520387A JP 2014525091 A JP2014525091 A JP 2014525091A
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electromagnetic radiation
individual
imaging device
representation
electronic
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Japanese (ja)
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JP2014525091A5 (enExample
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セイラー、スティーブン、ディー．
ユー． プレール、マーティン
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サイオニクス、インク．
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Publication of JP2014525091A publication Critical patent/JP2014525091A/ja
Publication of JP2014525091A5 publication Critical patent/JP2014525091A5/ja
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/18—Eye characteristics, e.g. of the iris
    • G06V40/19—Sensors therefor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/20—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N7/00—Television systems
    • H04N7/18—Closed-circuit television [CCTV] systems, i.e. systems in which the video signal is not broadcast
    • H04N7/183—Closed-circuit television [CCTV] systems, i.e. systems in which the video signal is not broadcast for receiving images from a single remote source

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Human Computer Interaction (AREA)
  • General Health & Medical Sciences (AREA)
  • Ophthalmology & Optometry (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Image Input (AREA)
  • Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
  • Image Analysis (AREA)
JP2014520387A 2011-07-13 2012-07-13 生体撮像装置および関連方法 Pending JP2014525091A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161507488P 2011-07-13 2011-07-13
US61/507,488 2011-07-13
PCT/US2012/046768 WO2013010127A2 (en) 2011-07-13 2012-07-13 Biometric imaging devices and associated methods

Publications (2)

Publication Number Publication Date
JP2014525091A true JP2014525091A (ja) 2014-09-25
JP2014525091A5 JP2014525091A5 (enExample) 2015-09-03

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JP2014520387A Pending JP2014525091A (ja) 2011-07-13 2012-07-13 生体撮像装置および関連方法

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US (3) US20130016203A1 (enExample)
EP (1) EP2732402A2 (enExample)
JP (1) JP2014525091A (enExample)
CN (1) CN103946867A (enExample)
WO (1) WO2013010127A2 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US9773169B1 (en) * 2012-11-06 2017-09-26 Cross Match Technologies, Inc. System for capturing a biometric image in high ambient light environments
US9557222B2 (en) * 2013-03-15 2017-01-31 Robert Bosch Gmbh Portable device with temperature sensing
US9893227B2 (en) * 2013-05-24 2018-02-13 The United States Of America As Represented By The Secretary Of The Army Enhanced deep ultraviolet photodetector and method thereof
JP6594620B2 (ja) * 2013-12-20 2019-10-23 パナソニック インテレクチュアル プロパティ コーポレーション オブ アメリカ 光脳機能計測装置
DE102014103010A1 (de) * 2014-03-06 2015-09-10 Skidata Ag Digitalkamera
KR101608316B1 (ko) * 2014-05-08 2016-04-01 아이리텍 잉크 실외 및 실내에서의 홍채이미지 획득장치 및 방법
WO2015188146A2 (en) * 2014-06-05 2015-12-10 Edward Hartley Sargent Sensors and systems for the capture of scenes and events in space and time
KR101645084B1 (ko) * 2014-06-10 2016-08-02 아이리텍 잉크 실외 및 실내에서 홍채인식이 가능한 손 부착형 웨어러블 장치
US9582879B2 (en) * 2014-10-20 2017-02-28 Microsoft Technology Licensing, Llc Facial skin mask generation for heart rate detection
JPWO2016135934A1 (ja) * 2015-02-26 2017-12-07 富士通株式会社 電子機器及び生体認証プログラム
US9654712B2 (en) * 2015-10-07 2017-05-16 Semiconductor Components Industries, Llc Pixels with a global shutter and high dynamic range
JP6643495B2 (ja) 2016-01-25 2020-02-12 ショット グラス テクノロジーズ （スゾウ） カンパニー リミテッドＳｃｈｏｔｔ Ｇｌａｓｓ Ｔｅｃｈｎｏｌｏｇｉｅｓ （Ｓｕｚｈｏｕ） Ｃｏ．， Ｌｔｄ． 光学的パラメータ検出システム
US11226402B2 (en) * 2016-06-09 2022-01-18 Ams Sensors Singapore Pte. Ltd. Optical ranging systems including optical cross-talk reducing features
EP3519850B1 (en) 2016-09-30 2024-10-30 Magic Leap, Inc. Projector with spatial light modulation
US10582095B2 (en) 2016-10-14 2020-03-03 MP High Tech Solutions Pty Ltd Imaging apparatuses and enclosures
US11765323B2 (en) 2017-05-26 2023-09-19 Calumino Pty Ltd. Apparatus and method of location determination in a thermal imaging system
KR102472629B1 (ko) * 2017-10-23 2022-11-30 삼성전자주식회사 적외선 다중 대역을 감지하는 이미지 센서 및 이를 이용한 전자 장치
US11625473B2 (en) 2018-02-14 2023-04-11 Samsung Electronics Co., Ltd. Method and apparatus with selective combined authentication
US10598936B1 (en) * 2018-04-23 2020-03-24 Facebook Technologies, Llc Multi-mode active pixel sensor
US11526793B2 (en) * 2018-10-04 2022-12-13 Intel Corporation Quantum state imaging for memory optimization
US11488999B2 (en) * 2020-01-06 2022-11-01 Qualcomm Incorporated Active depth sensing image sensor
US11258971B2 (en) * 2020-05-28 2022-02-22 Taiwan Semiconductor Manufacturing Company Limited Multi-function transfer gate electrode for a photodetector and methods of operating the same
US11373425B2 (en) 2020-06-02 2022-06-28 The Nielsen Company (U.S.), Llc Methods and apparatus for monitoring an audience of media based on thermal imaging
US11763591B2 (en) 2020-08-20 2023-09-19 The Nielsen Company (Us), Llc Methods and apparatus to determine an audience composition based on voice recognition, thermal imaging, and facial recognition
US11553247B2 (en) * 2020-08-20 2023-01-10 The Nielsen Company (Us), Llc Methods and apparatus to determine an audience composition based on thermal imaging and facial recognition
US11595723B2 (en) 2020-08-20 2023-02-28 The Nielsen Company (Us), Llc Methods and apparatus to determine an audience composition based on voice recognition

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001024936A (ja) * 1999-07-09 2001-01-26 Matsushita Electric Ind Co Ltd 画像取込装置
JP2001257927A (ja) * 2000-03-09 2001-09-21 Technosonic:Kk 被写体追尾装置
JP2002513176A (ja) * 1998-04-29 2002-05-08 カーネギー−メロン ユニバーシティ ２つの異なる波長の光を用いて対象者の眼を監視する装置および方法
JP2003308130A (ja) * 2002-04-15 2003-10-31 Matsushita Electric Ind Co Ltd 情報装置
JP2005339425A (ja) * 2004-05-31 2005-12-08 Sanyo Electric Co Ltd 本人認証装置
JP2006255430A (ja) * 2006-04-24 2006-09-28 Fujitsu Ltd 個人認識装置
US20080002863A1 (en) * 2004-12-07 2008-01-03 Aoptix Technologies, Inc. Iris imaging using reflection from the eye
WO2009016846A1 (ja) * 2007-08-02 2009-02-05 Panasonic Corporation 虹彩認証装置および虹彩認証システム
WO2011035188A2 (en) * 2009-09-17 2011-03-24 Sionyx, Inc. Photosensitive imaging devices and associated methods

Family Cites Families (714)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3487223A (en) 1968-07-10 1969-12-30 Us Air Force Multiple internal reflection structure in a silicon detector which is obtained by sandblasting
US4017887A (en) 1972-07-25 1977-04-12 The United States Of America As Represented By The Secretary Of The Air Force Method and means for passivation and isolation in semiconductor devices
US3973994A (en) 1974-03-11 1976-08-10 Rca Corporation Solar cell with grooved surface
US3922571A (en) 1974-06-12 1975-11-25 Bell Telephone Labor Inc Semiconductor voltage transformer
US3994012A (en) 1975-05-07 1976-11-23 The Regents Of The University Of Minnesota Photovoltaic semi-conductor devices
JPS52109884A (en) 1976-03-11 1977-09-14 Nec Corp Stripe type hetero junction semoonductor laser
GB1573309A (en) 1976-03-24 1980-08-20 Mullard Ltd Semiconductor devices and their manufacture
US4201450A (en) 1978-04-03 1980-05-06 Polaroid Corporation Rigid electro-optic device using a transparent ferroelectric ceramic element
US4176365A (en) 1978-05-08 1979-11-27 Sperry Rand Corporation Josephson tunnel junction device with hydrogenated amorphous silicon, germanium or silicon-germanium alloy tunneling barrier
GB2030766A (en) 1978-09-02 1980-04-10 Plessey Co Ltd Laser treatment of semiconductor material
US4181538A (en) 1978-09-26 1980-01-01 The United States Of America As Represented By The United States Department Of Energy Method for making defect-free zone by laser-annealing of doped silicon
JPS55120175A (en) 1979-03-12 1980-09-16 Clarion Co Ltd Variable capacitance diode with plural super-capacitance variable electrode structures
US4277793A (en) 1979-07-16 1981-07-07 Rca Corporation Photodiode having enhanced long wavelength response
GB2207801B (en) 1979-07-30 1989-05-24 Secr Defence Thermal imaging devices
US4242149A (en) 1979-07-31 1980-12-30 The United States Of America As Represented By The Secretary Of The Army Method of making photodetectors using ion implantation and laser annealing
US4253882A (en) 1980-02-15 1981-03-03 University Of Delaware Multiple gap photovoltaic device
US4322571A (en) 1980-07-17 1982-03-30 The Boeing Company Solar cells and methods for manufacture thereof
US4343832A (en) 1980-10-02 1982-08-10 Motorola, Inc. Semiconductor devices by laser enhanced diffusion
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS5771188A (en) 1980-10-21 1982-05-01 Mitsubishi Electric Corp Amorphous solar cell
US4568960A (en) 1980-10-23 1986-02-04 Rockwell International Corporation Blocked impurity band detectors
US4452826A (en) 1980-11-24 1984-06-05 Hughes Aircraft Company Use of polysilicon for smoothing of liquid crystal MOS displays
JPS57173966A (en) 1981-04-20 1982-10-26 Fuji Photo Film Co Ltd Solid state image pickup device
US4546945A (en) 1981-04-30 1985-10-15 Sea Co Services Limited Freight-carrying platforms
US4593303A (en) 1981-07-10 1986-06-03 Fairchild Camera & Instrument Corporation Self-aligned antiblooming structure for charge-coupled devices
DE3280293D1 (de) 1981-11-04 1991-02-21 Kanegafuchi Chemical Ind Biegsame photovoltaische einrichtung.
US4419533A (en) 1982-03-03 1983-12-06 Energy Conversion Devices, Inc. Photovoltaic device having incident radiation directing means for total internal reflection
US4514582A (en) 1982-09-17 1985-04-30 Exxon Research And Engineering Co. Optical absorption enhancement in amorphous silicon deposited on rough substrate
US4663188A (en) 1982-09-27 1987-05-05 Rca Corporation Method for making a photodetector with enhanced light absorption
JPS59127879A (ja) 1983-01-12 1984-07-23 Semiconductor Energy Lab Co Ltd 光電変換装置およびその作製方法
US4493942A (en) 1983-01-18 1985-01-15 Exxon Research And Engineering Co. Solar cell with two-dimensional reflecting diffraction grating
US4536608A (en) 1983-04-25 1985-08-20 Exxon Research And Engineering Co. Solar cell with two-dimensional hexagonal reflecting diffraction grating
JPH0785135B2 (ja) 1983-09-05 1995-09-13 オリンパス光学工業株式会社 内視鏡装置
DE3437561A1 (de) 1983-10-13 1985-04-25 Canon K.K., Tokio/Tokyo Bildaufnahmevorrichtung
AU565214B2 (en) 1983-12-23 1987-09-10 Unisearch Limited Laser grooved solar cell
JPS60138918A (ja) 1983-12-27 1985-07-23 Toshiba Corp 半導体装置の製造方法
US4617593A (en) 1984-08-07 1986-10-14 Texas Instruments Incorporated Visible and near infrared imaging system
US4703996A (en) 1984-08-24 1987-11-03 American Telephone And Telegraph Company, At&T Bell Laboratories Integrated optical device having integral photodetector
AU560866B2 (en) * 1984-09-25 1987-04-16 Matsushita Electric Works Ltd. Passive infrared detector
US4679068A (en) 1985-07-25 1987-07-07 General Electric Company Composite visible/thermal-infrared imaging system
US4648936A (en) 1985-10-11 1987-03-10 The United States Of America As Represented By The United States Department Of Energy Dopant type and/or concentration selective dry photochemical etching of semiconductor materials
US4673770A (en) 1985-10-21 1987-06-16 Joseph Mandelkorn Glass sealed silicon membrane solar cell
US4777490A (en) 1986-04-22 1988-10-11 General Electric Company Monolithic antenna with integral pin diode tuning
JPS63153A (ja) 1986-05-26 1988-01-05 Fujitsu Ltd 電荷転送装置
JPH0642291B2 (ja) 1986-08-25 1994-06-01 キヤノン株式会社 集積化光ヘツド
US4723086A (en) 1986-10-07 1988-02-02 Micronix Corporation Coarse and fine motion positioning mechanism
JPS63116421A (ja) 1986-11-05 1988-05-20 Mitsubishi Electric Corp 半導体装置の製造方法
US4894526A (en) 1987-01-15 1990-01-16 American Telephone And Telegraph Company, At&T Bell Laboratories Infrared-radiation detector device
GB8703743D0 (en) 1987-02-18 1987-03-25 British Telecomm Semiconductor laser structures
US4775425A (en) 1987-07-27 1988-10-04 Energy Conversion Devices, Inc. P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same
US4751571A (en) 1987-07-29 1988-06-14 General Electric Company Composite visible/thermal-infrared imaging apparatus
US4773944A (en) 1987-09-08 1988-09-27 Energy Conversion Devices, Inc. Large area, low voltage, high current photovoltaic modules and method of fabricating same
US4968354A (en) 1987-11-09 1990-11-06 Fuji Electric Co., Ltd. Thin film solar cell array
US5146296A (en) 1987-12-03 1992-09-08 Xsirius Photonics, Inc. Devices for detecting and/or imaging single photoelectron
AU612226B2 (en) 1987-12-17 1991-07-04 Unisearch Limited Solar cells with tilted geometrical features
US4886958A (en) 1988-03-25 1989-12-12 Texas Instruments Incorporated Autofocus system for scanning laser inspector or writer
US5182231A (en) 1988-04-07 1993-01-26 Hitachi, Ltd. Method for modifying wiring of semiconductor device
US4838952A (en) 1988-04-29 1989-06-13 Spectrolab, Inc. Controlled reflectance solar cell
US4965784A (en) 1988-05-31 1990-10-23 Sandia Corporation Method and apparatus for bistable optical information storage for erasable optical disks
US6048588A (en) 1988-07-08 2000-04-11 Cauldron Limited Partnership Method for enhancing chemisorption of material
US5081049A (en) 1988-07-18 1992-01-14 Unisearch Limited Sculpted solar cell surfaces
DE3827433C2 (de) 1988-08-12 1994-04-21 Deutsche Aerospace Verfahren zur Herstellung eines flexiblen Trägersubstrates
US5873821A (en) 1992-05-18 1999-02-23 Non-Invasive Technology, Inc. Lateralization spectrophotometer
JPH02152226A (ja) 1988-12-02 1990-06-12 Fujitsu Ltd 半導体装置の製造方法
JP2864518B2 (ja) 1989-03-09 1999-03-03 ソニー株式会社 半導体装置の製造方法
JP2738557B2 (ja) 1989-03-10 1998-04-08 三菱電機株式会社 多層構造太陽電池
US5383217A (en) 1989-05-09 1995-01-17 Nikon Corporation Exposure apparatus with laser source requiring new gas introduction
JPH03131083A (ja) 1989-10-17 1991-06-04 Mitsubishi Electric Corp 半導体レーザ装置の製造方法
JPH0795602B2 (ja) 1989-12-01 1995-10-11 三菱電機株式会社 太陽電池及びその製造方法
JP2647982B2 (ja) 1989-12-11 1997-08-27 日本電気株式会社 光記憶体
WO1991014284A1 (en) 1990-03-06 1991-09-19 Unisearch Limited Schottky junction charge coupled device
US5322988A (en) 1990-03-29 1994-06-21 The United States Of America As Represented By The Secretary Of The Navy Laser texturing
US5164324A (en) 1990-03-29 1992-11-17 The United States Of America As Represented By The Secretary Of The Navy Laser texturing
JP3154418B2 (ja) 1990-06-21 2001-04-09 キヤノン株式会社 半導体光増幅装置、光通信システム、双方向光通信システム、光通信ネットワーク、及び集積型光ノード
JP2689698B2 (ja) 1990-07-19 1997-12-10 国際電信電話株式会社 αパラメータ符号を反転させた半導体素子
GB9018957D0 (en) 1990-08-31 1990-10-17 Champion Spark Plug Europ Electronic switch comprising a photosensitive semiconductor
US5114876A (en) 1990-12-07 1992-05-19 The United States Of America As Represented By The United States Department Of Energy Selective epitaxy using the gild process
US5223043A (en) 1991-02-11 1993-06-29 The United States Of America As Represented By The United States Department Of Energy Current-matched high-efficiency, multijunction monolithic solar cells
US5234790A (en) 1991-03-04 1993-08-10 E. I. Du Pont De Nemours And Company Peel-apart photosensitive element
JPH04318970A (ja) 1991-04-17 1992-11-10 Mitsubishi Electric Corp 光検知装置の製造方法
US5413100A (en) 1991-07-17 1995-05-09 Effets Biologiques Exercice Non-invasive method for the in vivo determination of the oxygen saturation rate of arterial blood, and device for carrying out the method
US5705828A (en) 1991-08-10 1998-01-06 Sanyo Electric Co., Ltd. Photovoltaic device
JP3047666B2 (ja) 1993-03-16 2000-05-29 富士電機株式会社 シリコンオキサイド半導体膜の成膜方法
US5507881A (en) 1991-09-30 1996-04-16 Fuji Electric Co., Ltd. Thin-film solar cell and method of manufacturing same
DE4134110A1 (de) 1991-10-15 1993-04-22 Wacker Chemitronic Verfahren zum rotationssaegen sproedharter werkstoffe, insbesondere solcher mit durchmessern ueber 200 mm in duenne scheiben vermittels innenlochsaege und vorrichtung zur durchfuehrung des verfahrens
GB2261079B (en) 1991-10-31 1995-06-14 Asahi Optical Co Ltd Surface reflecting mirror
JPH05267695A (ja) 1991-11-06 1993-10-15 Mitsubishi Electric Corp 赤外線撮像装置
JP3048732B2 (ja) 1991-11-25 2000-06-05 三洋電機株式会社 光起電力装置
US5356488A (en) 1991-12-27 1994-10-18 Rudolf Hezel Solar cell and method for its manufacture
FR2687009B1 (fr) 1992-01-31 1994-04-29 Sgs Thomson Microelectronics Composant de protection pour circuit automobile.
EP0566156B1 (en) 1992-04-17 1997-08-27 Terumo Kabushiki Kaisha Infrared sensor and method for production thereof
US5236863A (en) 1992-06-01 1993-08-17 National Semiconductor Corporation Isolation process for VLSI
US5923071A (en) 1992-06-12 1999-07-13 Seiko Instruments Inc. Semiconductor device having a semiconductor film of low oxygen concentration
JP3194021B2 (ja) 1992-07-03 2001-07-30 経済産業省産業技術総合研究所長 レ−ザアニ−リング装置
JPH0690014A (ja) 1992-07-22 1994-03-29 Mitsubishi Electric Corp 薄型太陽電池及びその製造方法，エッチング方法及び自動エッチング装置，並びに半導体装置の製造方法
JPH0653538A (ja) 1992-07-28 1994-02-25 Toshiba Corp 半導体受光素子
US5244817A (en) 1992-08-03 1993-09-14 Eastman Kodak Company Method of making backside illuminated image sensors
US5296045A (en) 1992-09-04 1994-03-22 United Solar Systems Corporation Composite back reflector for photovoltaic device
JPH06104414A (ja) 1992-09-18 1994-04-15 Toshiba Corp 固体撮像装置
DE4234471C1 (de) 1992-10-13 1994-01-20 Fraunhofer Ges Forschung Vorrichtung zur Absorption infraroter Strahlung
US5346850A (en) 1992-10-29 1994-09-13 Regents Of The University Of California Crystallization and doping of amorphous silicon on low temperature plastic
JP3431647B2 (ja) 1992-10-30 2003-07-28 株式会社半導体エネルギー研究所 半導体装置とその作製方法およびメモリ装置の作製方法およびレーザードーピング処理方法
FR2699015B1 (fr) 1992-12-04 1995-02-24 Sgs Thomson Microelectronics Dispositif de protection contre des surtensions.
JP3200484B2 (ja) 1992-12-04 2001-08-20 富士ゼロックス株式会社 自己倍周波レーザー素子
US5373182A (en) 1993-01-12 1994-12-13 Santa Barbara Research Center Integrated IR and visible detector
JP3526308B2 (ja) 1993-02-18 2004-05-10 株式会社日立製作所 受光素子
JP3315191B2 (ja) 1993-03-22 2002-08-19 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
FR2704094B1 (fr) 1993-04-13 1995-07-07 Sgs Thomson Microelectronics Réseau de diodes monolithique.
US20020037517A1 (en) 1993-05-28 2002-03-28 Hutchens T. William Methods for sequencing biopolymers
JP2590690B2 (ja) 1993-06-15 1997-03-12 日本電気株式会社 半導体装置
US5473138A (en) 1993-07-13 1995-12-05 Singh; Rajiv K. Method for increasing the surface area of ceramics, metals and composites
US5381431A (en) 1993-08-13 1995-01-10 Massachusetts Institute Of Technology Picosecond Q-switched microlasers
FR2710455B1 (fr) 1993-09-24 1995-12-15 Frederic Ghirardi Procédé de réalisation d'une structure intégrée monolithique incorporant des composants opto-électroniques et structure ainsi réalisée.
FR2711276B1 (fr) 1993-10-11 1995-12-01 Neuchatel Universite Cellule photovoltaïque et procédé de fabrication d'une telle cellule.
TW299897U (en) 1993-11-05 1997-03-01 Semiconductor Energy Lab A semiconductor integrated circuit
US5714404A (en) 1993-11-18 1998-02-03 Regents Of The University Of California Fabrication of polycrystalline thin films by pulsed laser processing
JP3271222B2 (ja) 1994-02-22 2002-04-02 ソニー株式会社 固体撮像装置
US5792280A (en) 1994-05-09 1998-08-11 Sandia Corporation Method for fabricating silicon cells
US5600130A (en) 1994-06-17 1997-02-04 The Regents Of The University Of Colorado Two-dimensional optoelectronic array module
US5523570A (en) 1994-07-15 1996-06-04 Loral Infrared & Imaging Systems, Inc. Double direct injection dual band sensor readout input circuit
US5510271A (en) 1994-09-09 1996-04-23 Georgia Tech Research Corporation Processes for producing low cost, high efficiency silicon solar cells
JP3119090B2 (ja) 1994-10-05 2000-12-18 株式会社日立製作所 水中レーザ加工装置及びその装置を用いた水中施工方法
FI97186C (fi) 1994-11-11 1996-10-25 Nokia Telecommunications Oy Ylikuormituksen esto tietoliikenneverkon solmussa
FR2727571A1 (fr) 1994-11-25 1996-05-31 Sgs Thomson Microelectronics Thyristor a sensibilite en retournement controlee
US5627081A (en) 1994-11-29 1997-05-06 Midwest Research Institute Method for processing silicon solar cells
US5589704A (en) 1995-01-27 1996-12-31 Lucent Technologies Inc. Article comprising a Si-based photodetector
JP3211604B2 (ja) 1995-02-03 2001-09-25 株式会社日立製作所 半導体装置
CA2168484C (en) 1995-03-13 2000-12-05 Mehmet Reha Civanlar Client-server architecture using internet and public switched networks
JP3287173B2 (ja) 1995-04-07 2002-05-27 三菱電機株式会社 赤外線検出素子
US5569624A (en) 1995-06-05 1996-10-29 Regents Of The University Of California Method for shallow junction formation
US5758644A (en) 1995-06-07 1998-06-02 Masimo Corporation Manual and automatic probe calibration
FR2735225B1 (fr) 1995-06-12 1997-09-05 Motorola Semiconducteurs Capteur de position optoelectronique et systeme de compensation pour un tel capteur
DE19522539C2 (de) 1995-06-21 1997-06-12 Fraunhofer Ges Forschung Solarzelle mit einem, eine Oberflächentextur aufweisenden Emitter sowie Verfahren zur Herstellung derselben
FR2735907B1 (fr) 1995-06-22 1997-09-05 Sgs Thomson Microelectronics Assemblage monolitique de composants semiconducteurs incluant une diode rapide
JP3143591B2 (ja) 1995-09-14 2001-03-07 キヤノン株式会社 表示装置
GB9520901D0 (en) 1995-10-12 1995-12-13 Philips Electronics Nv Electronic device manufacture
US5641362A (en) 1995-11-22 1997-06-24 Ebara Solar, Inc. Structure and fabrication process for an aluminum alloy junction self-aligned back contact silicon solar cell
JP3416364B2 (ja) 1995-11-27 2003-06-16 三洋電機株式会社 光起電力素子及びその製造方法
US5597621A (en) 1995-12-01 1997-01-28 University Of Florida Method of manufacturing photoluminescing semiconductor material using lasers
JP3608858B2 (ja) 1995-12-18 2005-01-12 三菱電機株式会社 赤外線検出器及びその製造方法
EP0793277B1 (en) 1996-02-27 2001-08-22 Canon Kabushiki Kaisha Photovoltaic device provided with an opaque substrate having a specific irregular surface structure
JP3444081B2 (ja) 1996-02-28 2003-09-08 株式会社日立製作所 ダイオード及び電力変換装置
US5641969A (en) 1996-03-28 1997-06-24 Applied Materials, Inc. Ion implantation apparatus
US5766127A (en) 1996-04-15 1998-06-16 Ohmeda Inc. Method and apparatus for improved photoplethysmographic perfusion-index monitoring
JP3516552B2 (ja) 1996-04-30 2004-04-05 シャープ株式会社 受光素子の製造方法
US5871826A (en) 1996-05-30 1999-02-16 Xerox Corporation Proximity laser doping technique for electronic materials
WO1997048258A1 (en) 1996-06-14 1997-12-18 Matsushita Electric Industrial Co., Ltd. Screen printing method and screen printing apparatus
US6133119A (en) 1996-07-08 2000-10-17 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method manufacturing same
JP2833588B2 (ja) 1996-07-30 1998-12-09 日本電気株式会社 フォトディテクタおよびその製造方法
DE19637182A1 (de) 1996-09-12 1998-03-19 Wacker Siltronic Halbleitermat Verfahren zur Herstellung von Halbleiterscheiben aus Silicium mit geringer Defektdichte
KR100269287B1 (ko) 1996-11-22 2000-11-01 윤종용 반도체장치의hsg형성방법
US5802091A (en) 1996-11-27 1998-09-01 Lucent Technologies Inc. Tantalum-aluminum oxide coatings for semiconductor devices
JP3917698B2 (ja) 1996-12-12 2007-05-23 株式会社半導体エネルギー研究所 レーザーアニール方法およびレーザーアニール装置
US6080988A (en) 1996-12-20 2000-06-27 Nikon Corporation Optically readable radiation-displacement-conversion devices and methods, and image-rendering apparatus and methods employing same
US5751005A (en) 1996-12-20 1998-05-12 Raytheon Company Low-crosstalk column differencing circuit architecture for integrated two-color focal plane arrays
US5808350A (en) 1997-01-03 1998-09-15 Raytheon Company Integrated IR, visible and NIR sensor and methods of fabricating same
US6106689A (en) 1997-01-20 2000-08-22 Canon Kabushiki Kaisha Process for forming zinc oxide film and processes for producing semiconductor device substrate and photo-electricity generating device using the film
JPH10209168A (ja) 1997-01-24 1998-08-07 Nec Corp 半導体装置の製造方法
JPH10209039A (ja) 1997-01-27 1998-08-07 Nikon Corp 投影露光方法及び投影露光装置
AU744065B2 (en) 1997-03-03 2002-02-14 British Telecommunications Public Limited Company Security check provision
EP0867701A1 (en) 1997-03-28 1998-09-30 Interuniversitair Microelektronica Centrum Vzw Method of fabrication of an infrared radiation detector and more particularly an infrared sensitive bolometer
US6117499A (en) 1997-04-09 2000-09-12 Komag, Inc. Micro-texture media made by polishing of a selectively irradiated surface
US5781392A (en) 1997-05-12 1998-07-14 Tii Industries, Inc. Balanced overvoltage protector for a dual-wire system
JP3924352B2 (ja) 1997-06-05 2007-06-06 浜松ホトニクス株式会社 裏面照射型受光デバイス
US5918140A (en) 1997-06-16 1999-06-29 The Regents Of The University Of California Deposition of dopant impurities and pulsed energy drive-in
DE19729396A1 (de) 1997-07-09 1999-01-14 Siemens Ag Elektrischer Kontakt für ein II-VI-Halbleiterbauelement und Verfahren zum Herstellen des elektrischen Kontaktes
US6107618A (en) 1997-07-14 2000-08-22 California Institute Of Technology Integrated infrared and visible image sensors
US6097031A (en) 1997-07-25 2000-08-01 Honeywell Inc. Dual bandwith bolometer
JPH1177348A (ja) 1997-08-29 1999-03-23 Canon Inc 溶接方法及び光起電力素子
US6107641A (en) 1997-09-10 2000-08-22 Xerox Corporation Thin film transistor with reduced parasitic capacitance and reduced feed-through voltage
IL135139A0 (en) 1997-09-19 2001-05-20 Nikon Corp Stage apparatus, scanning type exposure apparatus, and device produced with the same
JPH1197724A (ja) 1997-09-25 1999-04-09 Citizen Watch Co Ltd 太陽電池およびその製造方法
JP3168961B2 (ja) 1997-10-06 2001-05-21 住友電気工業株式会社 ダイヤモンド基板及びダイヤモンド基板の評価方法並びにダイヤモンド表面弾性波フィルタ
US6041246A (en) 1997-10-14 2000-03-21 Transonic Systems, Inc. Single light sensor optical probe for monitoring blood parameters and cardiovascular measurements
DE19752208A1 (de) 1997-11-25 1999-06-02 Bosch Gmbh Robert Thermischer Membransensor und Verfahren zu seiner Herstellung
WO1999029095A1 (en) 1997-12-03 1999-06-10 Telcordia Technologies, Inc. Intelligent data peripheral systems and methods
JPH11168069A (ja) 1997-12-03 1999-06-22 Nec Corp 半導体装置の製造方法
US6229192B1 (en) 1998-01-27 2001-05-08 Ois Optical Imaging Systems, Inc. Image sensor or LCD including switching pin diodes
US6131512A (en) 1998-02-03 2000-10-17 Agfa-Gevaert, N.V. Printing master comprising strain gauges
JP4208281B2 (ja) 1998-02-26 2009-01-14 キヤノン株式会社 積層型光起電力素子
DE19811878C2 (de) 1998-03-18 2002-09-19 Siemens Solar Gmbh Verfahren und Ätzlösung zum naßchemischen pyramidalen Texturätzen von Siliziumoberflächen
JP3592075B2 (ja) 1998-04-16 2004-11-24 松下電器産業株式会社 円板形状体の位置決め装置
US6756104B2 (en) 1998-04-21 2004-06-29 Lsp Technologies, Inc. Surface finishes on laser rods and slabs for laser peening systems
US6160833A (en) 1998-05-06 2000-12-12 Xerox Corporation Blue vertical cavity surface emitting laser
US6489643B1 (en) 1998-06-27 2002-12-03 Hynix Semiconductor Inc. Photodiode having a plurality of PN junctions and image sensor having the same
AUPP437598A0 (en) 1998-06-29 1998-07-23 Unisearch Limited A self aligning method for forming a selective emitter and metallization in a solar cell
US6198147B1 (en) 1998-07-06 2001-03-06 Intel Corporation Detecting infrared and visible light
DE19838439C1 (de) 1998-08-24 2000-04-27 Fraunhofer Ges Forschung Dünnfilmphotodiode und Verfahren zur Herstellung
US6465860B2 (en) 1998-09-01 2002-10-15 Kabushiki Kaisha Toshiba Multi-wavelength semiconductor image sensor and method of manufacturing the same
EP0986110A1 (de) 1998-09-10 2000-03-15 Electrowatt Technology Innovation AG Lichtempfindliches Halbleiterelement und Verwendung zur Regelung von Flammen
US6721585B1 (en) 1998-10-15 2004-04-13 Sensidyne, Inc. Universal modular pulse oximeter probe for use with reusable and disposable patient attachment devices
US6071796A (en) 1998-10-30 2000-06-06 Sharp Laboratories Of America, Inc. Method of controlling oxygen incorporation during crystallization of silicon film by excimer laser anneal in air ambient
US6121130A (en) 1998-11-16 2000-09-19 Chartered Semiconductor Manufacturing Ltd. Laser curing of spin-on dielectric thin films
US6111300A (en) 1998-12-01 2000-08-29 Agilent Technologies Multiple color detection elevated pin photo diode active pixel sensor
US6333485B1 (en) 1998-12-11 2001-12-25 International Business Machines Corporation Method for minimizing sample damage during the ablation of material using a focused ultrashort pulsed beam
US6049058A (en) 1998-12-15 2000-04-11 Lsp Technologies, Inc. Laser peening process and apparatus with uniform pressure pulse confinement
WO2000040938A1 (en) 1999-01-08 2000-07-13 Sarnoff Corporation Optical detectors using nulling for high linearity and large dynamic range
US6429036B1 (en) 1999-01-14 2002-08-06 Micron Technology, Inc. Backside illumination of CMOS image sensor
US6514840B2 (en) 1999-04-13 2003-02-04 International Business Machines Corporation Micro heating of selective regions
US6876003B1 (en) 1999-04-15 2005-04-05 Sumitomo Electric Industries, Ltd. Semiconductor light-emitting device, method of manufacturing transparent conductor film and method of manufacturing compound semiconductor light-emitting device
US6331445B1 (en) 1999-05-07 2001-12-18 National Research Council Of Canada Phototonic device with strain-induced three dimensional growth morphology
US6727521B2 (en) 2000-09-25 2004-04-27 Foveon, Inc. Vertical color filter detector group and array
JP2001007381A (ja) 1999-06-24 2001-01-12 Nippon Hoso Kyokai <Nhk> 光電変換膜とその作製方法
AU5784400A (en) 1999-07-02 2001-01-22 Digirad Corporation Indirect back surface contact to semiconductor devices
US6657178B2 (en) 1999-07-20 2003-12-02 Intevac, Inc. Electron bombarded passive pixel sensor imaging
JP3422290B2 (ja) 1999-07-22 2003-06-30 日本電気株式会社 半導体薄膜の製造方法
US6168965B1 (en) 1999-08-12 2001-01-02 Tower Semiconductor Ltd. Method for making backside illuminated image sensor
US6290713B1 (en) 1999-08-24 2001-09-18 Thomas A. Russell Flexible illuminators for phototherapy
US6313901B1 (en) 1999-09-01 2001-11-06 National Semiconductor Corporation Liquid crystal display fabrication process using a final rapid thermal anneal
US7112545B1 (en) 1999-09-10 2006-09-26 The Board Of Trustees Of The University Of Arkansas Passivation of material using ultra-fast pulsed laser
US6486522B1 (en) 1999-09-28 2002-11-26 Pictos Technologies, Inc. Light sensing system with high pixel fill factor
US6984571B1 (en) 1999-10-01 2006-01-10 Ziptronix, Inc. Three dimensional device integration method and integrated device
AU1318001A (en) 1999-10-26 2001-05-08 Telefonaktiebolaget Lm Ericsson (Publ) System and method for improved resource management in an integrated telecommunications network having packet-switched network portion and a circuit-switched network portion
US6562705B1 (en) 1999-10-26 2003-05-13 Kabushiki Kaisha Toshiba Method and apparatus for manufacturing semiconductor element
EP1096577B9 (en) 1999-10-27 2016-06-01 Kaneka Corporation Method of producing a thin-film photovoltaic device
US6867806B1 (en) 1999-11-04 2005-03-15 Taiwan Advanced Sensors Corporation Interlace overlap pixel design for high sensitivity CMOS image sensors
AU4347600A (en) 1999-11-10 2001-06-06 Rainfinity, Inc. Distributed traffic controlling system and method for network data
US6272768B1 (en) 1999-11-12 2001-08-14 Michael J. Danese Apparatus for treating an object using ultra-violet light
US6457478B1 (en) 1999-11-12 2002-10-01 Michael J. Danese Method for treating an object using ultra-violet light
JP4124396B2 (ja) 1999-12-17 2008-07-23 独立行政法人科学技術振興機構 ホログラムの製造方法および装置
GB9930257D0 (en) 1999-12-22 2000-02-09 Suisse Electronique Microtech Optoelectronic sensor
KR100683390B1 (ko) 1999-12-28 2007-02-15 매그나칩 반도체 유한회사 이미지센서의 제조 방법
JP2001189478A (ja) 1999-12-28 2001-07-10 Sanyo Electric Co Ltd 半導体素子及びその製造方法
US6586318B1 (en) 1999-12-28 2003-07-01 Xerox Corporation Thin phosphorus nitride film as an N-type doping source used in laser doping technology
US6366804B1 (en) 1999-12-29 2002-04-02 Ge Medical Systems Information Technologies, Inc. Method of and apparatus for Identifying a portion of a waveform representing a physiological event
US6501065B1 (en) 1999-12-29 2002-12-31 Intel Corporation Image sensor using a thin film photodiode above active CMOS circuitry
US6291302B1 (en) 2000-01-14 2001-09-18 Advanced Micro Devices, Inc. Selective laser anneal process using highly reflective aluminum mask
JP3398638B2 (ja) 2000-01-28 2003-04-21 科学技術振興事業団 発光ダイオードおよび半導体レーザーとそれらの製造方法
JP2001236671A (ja) 2000-02-22 2001-08-31 Pioneer Electronic Corp 光ピックアップ装置及びレーザダイオードチップ
KR20010085722A (ko) 2000-02-29 2001-09-07 추후제출 반도체 물질상에서의 선택적인 레이저 어닐
US6830993B1 (en) 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
FR2807569B1 (fr) 2000-04-10 2004-08-27 Centre Nat Rech Scient Perfectionnement apportes aux diodes schottky
US6483116B1 (en) 2000-04-25 2002-11-19 Innovative Technology Licensing, Llc High performance ultraviolet imager for operation at room temperature
JP2001326201A (ja) 2000-05-16 2001-11-22 Ebara Corp ポリッシング装置
US6682383B2 (en) 2000-05-17 2004-01-27 Electronics And Telecommunications Research Institute Cathode structure for field emission device and method of fabricating the same
JP3713418B2 (ja) 2000-05-30 2005-11-09 光正 小柳 ３次元画像処理装置の製造方法
US6483929B1 (en) 2000-06-08 2002-11-19 Tarian Llc Method and apparatus for histological and physiological biometric operation and authentication
US7211214B2 (en) 2000-07-18 2007-05-01 Princeton University Laser assisted direct imprint lithography
JP2002043594A (ja) 2000-07-21 2002-02-08 Sharp Corp 光透過型薄膜太陽電池モジュール
ATE346410T1 (de) 2000-08-04 2006-12-15 Amberwave Systems Corp Siliziumwafer mit monolithischen optoelektronischen komponenten
US6388204B1 (en) 2000-08-29 2002-05-14 International Business Machines Corporation Composite laminate circuit structure and methods of interconnecting the same
JP2002072980A (ja) 2000-08-31 2002-03-12 Nec Corp カラー映像表示方法および装置
DE10042733A1 (de) 2000-08-31 2002-03-28 Inst Physikalische Hochtech Ev Multikristalline laserkristallisierte Silicium-Dünnschicht-Solarzelle auf transparentem Substrat
US6580053B1 (en) 2000-08-31 2003-06-17 Sharp Laboratories Of America, Inc. Apparatus to control the amount of oxygen incorporated into polycrystalline silicon film during excimer laser processing of silicon films
JP4919546B2 (ja) 2000-09-18 2012-04-18 東芝モバイルディスプレイ株式会社 多結晶シリコン膜の形成方法
US6900839B1 (en) 2000-09-29 2005-05-31 Rockwell Science Center, Llc High gain detector amplifier with enhanced dynamic range for single photon read-out of photodetectors
IL138884A (en) 2000-10-05 2006-07-05 Conmed Corp Pulse oximeter and a method of its operation
TW466785B (en) 2000-10-11 2001-12-01 Ultratera Corp Thin-type photosensitive semiconductor device
US6689209B2 (en) 2000-11-03 2004-02-10 Memc Electronic Materials, Inc. Process for preparing low defect density silicon using high growth rates
US7352454B2 (en) * 2000-11-09 2008-04-01 Canesta, Inc. Methods and devices for improved charge management for three-dimensional and color sensing
JP3994655B2 (ja) 2000-11-14 2007-10-24 住友電気工業株式会社 半導体受光素子
US6498336B1 (en) 2000-11-15 2002-12-24 Pixim, Inc. Integrated light sensors with back reflectors for increased quantum efficiency
AU2002233930A1 (en) 2000-11-16 2002-05-27 Solarflex Technologies, Inc. System and methods for laser assisted deposition
US20020060322A1 (en) 2000-11-20 2002-05-23 Hiroshi Tanabe Thin film transistor having high mobility and high on-current and method for manufacturing the same
JP4461657B2 (ja) 2000-12-07 2010-05-12 セイコーエプソン株式会社 光電変換素子
KR20020077484A (ko) 2000-12-20 2002-10-11 다이셀 가가꾸 고교 가부시끼가이샤 유기 전기발광 소자용 재료 및 그의 제조 방법
JP2002190386A (ja) 2000-12-20 2002-07-05 Daicel Chem Ind Ltd 有機エレクトロルミネッセンス素子用材料およびその製造方法
US6509204B2 (en) 2001-01-29 2003-01-21 Xoptix, Inc. Transparent solar cell and method of fabrication
FR2820883B1 (fr) 2001-02-12 2003-06-13 St Microelectronics Sa Photodiode a grande capacite
US6782154B2 (en) 2001-02-12 2004-08-24 Rensselaer Polytechnic Institute Ultrafast all-optical switch using carbon nanotube polymer composites
JP2002343993A (ja) 2001-03-15 2002-11-29 Canon Inc 薄膜多結晶太陽電池及びその形成方法
US6734455B2 (en) 2001-03-15 2004-05-11 Micron Technology, Inc. Agglomeration elimination for metal sputter deposition of chalcogenides
US6597025B2 (en) 2001-03-15 2003-07-22 Koninklijke Philips Electronics N.V. Light sensitive semiconductor component
JP4433131B2 (ja) 2001-03-22 2010-03-17 キヤノン株式会社 シリコン系薄膜の形成方法
JP2002289879A (ja) 2001-03-27 2002-10-04 Toshiba Corp ダイオード
GB0108795D0 (en) 2001-04-07 2001-05-30 Power Innovations Ltd Overvoltage protection device
TWI256076B (en) 2001-04-11 2006-06-01 Memc Electronic Materials Control of thermal donor formation in high resistivity CZ silicon
US6586738B2 (en) 2001-04-13 2003-07-01 Mcnc Electromagnetic radiation detectors having a micromachined electrostatic chopper device
US7390689B2 (en) 2001-05-25 2008-06-24 President And Fellows Of Harvard College Systems and methods for light absorption and field emission using microstructured silicon
US7354792B2 (en) * 2001-05-25 2008-04-08 President And Fellows Of Harvard College Manufacture of silicon-based devices having disordered sulfur-doped surface layers
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US6796144B2 (en) 2001-05-30 2004-09-28 Battelle Memorial Institute System and method for glass processing and temperature sensing
US6735225B2 (en) 2001-06-07 2004-05-11 Lambda Physik Ag Chirp compensation method and apparatus
US7075079B2 (en) 2001-06-27 2006-07-11 Wood Roland A Sensor for dual wavelength bands
FR2827707B1 (fr) 2001-07-20 2003-11-21 Fr De Detecteurs Infrarouges S Procede de realisation d'un detecteur bolometrique et detecteur realise selon ce procede
US6720595B2 (en) 2001-08-06 2004-04-13 International Business Machines Corporation Three-dimensional island pixel photo-sensor
JP2003058269A (ja) 2001-08-09 2003-02-28 Mitsubishi Heavy Ind Ltd 個人認証システム
JP2003069061A (ja) 2001-08-24 2003-03-07 Sharp Corp 積層型光電変換素子
US6777317B2 (en) 2001-08-29 2004-08-17 Ultratech Stepper, Inc. Method for semiconductor gate doping
KR100390919B1 (ko) 2001-09-05 2003-07-12 주식회사 하이닉스반도체 반도체소자의 제조방법
US6803555B1 (en) 2001-09-07 2004-10-12 Indigo Systems Corporation Two-stage auto-zero amplifier circuit for electro-optical arrays
JP2003104121A (ja) 2001-09-27 2003-04-09 Matsushita Electric Ind Co Ltd 後方視界表示装置
US6607927B2 (en) 2001-09-28 2003-08-19 Agere Systems, Inc. Method and apparatus for monitoring in-line copper contamination
CA2359269A1 (en) * 2001-10-17 2003-04-17 Biodentity Systems Corporation Face imaging system for recordal and automated identity confirmation
FR2832224B1 (fr) 2001-11-15 2004-01-16 Commissariat Energie Atomique Dispositif electronique monolithique multicouches et procede de realisation d'un tel dispositif
US7109517B2 (en) 2001-11-16 2006-09-19 Zaidi Saleem H Method of making an enhanced optical absorption and radiation tolerance in thin-film solar cells and photodetectors
US7202102B2 (en) 2001-11-27 2007-04-10 Jds Uniphase Corporation Doped absorption for enhanced responsivity for high speed photodiodes
KR20040068928A (ko) 2001-11-29 2004-08-02 오리진 에너지 솔라 피티와이 리미티드 반도체 가공 방법
US6759262B2 (en) 2001-12-18 2004-07-06 Agilent Technologies, Inc. Image sensor with pixel isolation system and manufacturing method therefor
FR2834128B1 (fr) 2001-12-21 2005-03-04 St Microelectronics Sa Dispositif de protection bidirectionnel a faible capacite
US6667528B2 (en) 2002-01-03 2003-12-23 International Business Machines Corporation Semiconductor-on-insulator lateral p-i-n photodetector with a reflecting mirror and backside contact and method for forming the same
US6923625B2 (en) 2002-01-07 2005-08-02 Integrated Sensing Systems, Inc. Method of forming a reactive material and article formed thereby
KR100843001B1 (ko) 2002-01-16 2008-07-01 동화약품공업주식회사 구강점막 부착형 필름제제
JP2003258285A (ja) 2002-02-27 2003-09-12 Sharp Corp 表面凹凸構造の作製方法及び太陽電池
US6583936B1 (en) 2002-03-11 2003-06-24 Eastman Kodak Company Patterned roller for the micro-replication of complex lenses
US20050088634A1 (en) 2002-03-15 2005-04-28 Nikon Corporation Exposure system and device production process
US7012643B2 (en) 2002-05-08 2006-03-14 Ball Aerospace & Technologies Corp. One chip, low light level color camera
JP4123415B2 (ja) 2002-05-20 2008-07-23 ソニー株式会社 固体撮像装置
US6946715B2 (en) 2003-02-19 2005-09-20 Micron Technology, Inc. CMOS image sensor and method of fabrication
JP2004047682A (ja) 2002-07-11 2004-02-12 Toshiba Corp 固体撮像装置
EP1535340A1 (en) 2002-07-16 2005-06-01 STMicroelectronics N.V. Tfa image sensor with stability-optimized photodiode
KR100460066B1 (ko) 2002-07-19 2004-12-04 주식회사 하이닉스반도체 반도체소자의 제조방법
US7078702B2 (en) 2002-07-25 2006-07-18 General Electric Company Imager
US7705349B2 (en) 2002-08-29 2010-04-27 Micron Technology, Inc. Test inserts and interconnects with electrostatic discharge structures
JP4403687B2 (ja) 2002-09-18 2010-01-27 ソニー株式会社 固体撮像装置およびその駆動制御方法
EP1540733B1 (en) 2002-09-19 2008-07-16 Quantum Semiconductor, LLC Light-sensing device
AU2003279758A1 (en) 2002-10-03 2004-04-23 Pan Jit Americas, Inc. Low temperature texturing layer to enhance adhesion of subsequent layers
US6864190B2 (en) 2002-10-17 2005-03-08 National Research Council Of Canada Laser chemical fabrication of nanostructures
US6929974B2 (en) 2002-10-18 2005-08-16 Motorola, Inc. Feedthrough design and method for a hermetically sealed microdevice
KR20040036087A (ko) 2002-10-23 2004-04-30 주식회사 하이닉스반도체 광의 파장에 따라 포토다이오드의 깊이가 다른 씨모스이미지센서 및 그 제조 방법
JP4387091B2 (ja) 2002-11-05 2009-12-16 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
DE10253679A1 (de) 2002-11-18 2004-06-03 Infineon Technologies Ag Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
TW569351B (en) 2002-11-22 2004-01-01 Au Optronics Corp Excimer laser anneal apparatus and the application of the same
US6753585B1 (en) 2002-12-05 2004-06-22 National Semiconductor Corporation Vertical color photo-detector with increased sensitivity and compatible video interface
CN100388511C (zh) 2002-12-10 2008-05-14 北京力诺桑普光伏高科技有限公司 单晶硅太阳能电池的表面结构及其制作方法
JP2004193350A (ja) 2002-12-11 2004-07-08 Sharp Corp 太陽電池セルおよびその製造方法
US7211501B2 (en) 2002-12-12 2007-05-01 Intel Corporation Method and apparatus for laser annealing
US7453129B2 (en) 2002-12-18 2008-11-18 Noble Peak Vision Corp. Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
EP1434264A3 (en) 2002-12-27 2017-01-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method using the transfer technique
DE10305009A1 (de) 2003-02-07 2004-09-02 Robert Bosch Gmbh Vorrichtung und Verfahren zur Bilderzeugung
US7176528B2 (en) 2003-02-18 2007-02-13 Corning Incorporated Glass-based SOI structures
DE10310740A1 (de) 2003-03-10 2004-09-30 Forschungszentrum Jülich GmbH Verfahren zur Herstellung einer spannungsrelaxierten Schichtstruktur auf einem nicht gitterangepassten Substrat, sowie Verwendung eines solchen Schichtsystems in elektronischen und/oder optoelektronischen Bauelementen
JP2004273886A (ja) 2003-03-11 2004-09-30 Hitachi Cable Ltd 結晶薄膜半導体装置および光起電力装置
JP2004273887A (ja) 2003-03-11 2004-09-30 Hitachi Cable Ltd 結晶薄膜半導体装置及び太陽電池素子
US7619269B2 (en) 2003-03-19 2009-11-17 Fujitsu Microelectronics Limited Semiconductor device, manufacturing process thereof and imaging device
US6864156B1 (en) 2003-04-04 2005-03-08 Xilinx, Inc. Semiconductor wafer with well contacts on back side
IL155536A0 (en) 2003-04-21 2003-11-23 Yissum Res Dev Co Voltage tunable integrated infrared imager
TWI227913B (en) 2003-05-02 2005-02-11 Au Optronics Corp Method of fabricating polysilicon film by excimer laser crystallization process
US7161173B2 (en) 2003-05-20 2007-01-09 Burgener Ii Robert H P-type group II-VI semiconductor compounds
US7008854B2 (en) 2003-05-21 2006-03-07 Micron Technology, Inc. Silicon oxycarbide substrates for bonded silicon on insulator
US7273788B2 (en) 2003-05-21 2007-09-25 Micron Technology, Inc. Ultra-thin semiconductors bonded on glass substrates
US6911375B2 (en) 2003-06-02 2005-06-28 International Business Machines Corporation Method of fabricating silicon devices on sapphire with wafer bonding at low temperature
US20040256561A1 (en) 2003-06-17 2004-12-23 Allyson Beuhler Wide band light sensing pixel array
US7560750B2 (en) 2003-06-26 2009-07-14 Kyocera Corporation Solar cell device
US7148528B2 (en) 2003-07-02 2006-12-12 Micron Technology, Inc. Pinned photodiode structure and method of formation
US7247527B2 (en) 2003-07-31 2007-07-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device, and laser irradiation apparatus
US7358498B2 (en) 2003-08-04 2008-04-15 Technest Holdings, Inc. System and a method for a smart surveillance system
US6984816B2 (en) 2003-08-13 2006-01-10 Motorola, Inc. Vertically integrated photosensor for CMOS imagers
US6927432B2 (en) 2003-08-13 2005-08-09 Motorola, Inc. Vertically integrated photosensor for CMOS imagers
EA009012B1 (ru) 2003-08-14 2007-10-26 Юниверсити Оф Йоханнесбург Полупроводниковые пленки из четырех и более компонентных сплавов элементов групп i-iii-vi
JP4442157B2 (ja) 2003-08-20 2010-03-31 ソニー株式会社 光電変換装置及び固体撮像装置
US7067385B2 (en) 2003-09-04 2006-06-27 Micron Technology, Inc. Support for vertically oriented capacitors during the formation of a semiconductor device
CN100431177C (zh) 2003-09-24 2008-11-05 三洋电机株式会社 光生伏打元件及其制造方法
TWI246783B (en) 2003-09-24 2006-01-01 Matsushita Electric Works Ltd Light-emitting device and its manufacturing method
US7271405B2 (en) 2003-10-14 2007-09-18 Stc.Unm Intersubband detector with avalanche multiplier region
KR100543532B1 (ko) 2003-10-24 2006-01-20 준 신 이 모듈일체형 태양전지 및 그 제조방법
EP1678523B1 (de) 2003-10-29 2007-07-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Abstandssensor und verfahren zur abstandserfassung
JP4507560B2 (ja) 2003-10-30 2010-07-21 日本電気株式会社 薄膜デバイス基板の製造方法
US7084460B2 (en) 2003-11-03 2006-08-01 International Business Machines Corporation Method for fabricating SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) substrates
WO2005048319A2 (en) 2003-11-06 2005-05-26 Yale University Large-area detector
US7285433B2 (en) 2003-11-06 2007-10-23 General Electric Company Integrated devices with optical and electrical isolation and method for making
JP4578797B2 (ja) 2003-11-10 2010-11-10 パナソニック株式会社 撮像装置
US20050101160A1 (en) 2003-11-12 2005-05-12 Diwakar Garg Silicon thin film transistors and solar cells on plastic substrates
US7542085B2 (en) 2003-11-26 2009-06-02 Aptina Imaging Corporation Image sensor with a capacitive storage node linked to transfer gate
KR100603318B1 (ko) 2003-11-27 2006-07-20 삼성에스디아이 주식회사 반도체의 레이저 어닐링용 인라인 처리 장치
US7123298B2 (en) 2003-12-18 2006-10-17 Avago Technologies Sensor Ip Pte. Ltd. Color image sensor with imaging elements imaging on respective regions of sensor elements
KR20060133555A (ko) 2003-12-29 2006-12-26 셔우드 인포메이션 파트너스 인코포레이션 멀티플 ｈｄｄ 케이스를 이용한 대량 저장 시스템 및 방법
JP3729826B2 (ja) 2004-01-09 2005-12-21 松下電器産業株式会社 固体撮像装置の製造方法
US20050150542A1 (en) 2004-01-13 2005-07-14 Arun Madan Stable Three-Terminal and Four-Terminal Solar Cells and Solar Cell Panels Using Thin-Film Silicon Technology
GB0401578D0 (en) 2004-01-24 2004-02-25 Koninkl Philips Electronics Nv Phototransistor
US6897118B1 (en) 2004-02-11 2005-05-24 Chartered Semiconductor Manufacturing Ltd. Method of multiple pulse laser annealing to activate ultra-shallow junctions
US7663057B2 (en) 2004-02-19 2010-02-16 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell
US7154136B2 (en) 2004-02-20 2006-12-26 Micron Technology, Inc. Isolation structures for preventing photons and carriers from reaching active areas and methods of formation
US7492027B2 (en) 2004-02-20 2009-02-17 Micron Technology, Inc. Reduced crosstalk sensor and method of formation
US7486705B2 (en) 2004-03-31 2009-02-03 Imra America, Inc. Femtosecond laser processing system with process parameters, controls and feedback
JP4317115B2 (ja) 2004-04-12 2009-08-19 国立大学法人東北大学 固体撮像装置、光センサおよび固体撮像装置の動作方法
US7419846B2 (en) 2004-04-13 2008-09-02 The Trustees Of Princeton University Method of fabricating an optoelectronic device having a bulk heterojunction
JP5095073B2 (ja) 2004-04-28 2012-12-12 株式会社イー・エム・ディー 半導体物質の表面改質方法、半導体装置の製造方法
JP5110239B2 (ja) 2004-05-11 2012-12-26 Ｊｓｒ株式会社 有機シリカ系膜の形成方法、膜形成用組成物
US7629234B2 (en) 2004-06-18 2009-12-08 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laterally spaced laser beam spots with joint velocity profiling
US7923306B2 (en) 2004-06-18 2011-04-12 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots
US7687740B2 (en) 2004-06-18 2010-03-30 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows
US7935941B2 (en) 2004-06-18 2011-05-03 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots spaced on-axis on non-adjacent structures
US8466004B2 (en) 2004-06-24 2013-06-18 The Trustees Of Princeton University Solar cells
KR100745985B1 (ko) 2004-06-28 2007-08-06 삼성전자주식회사 이미지 센서
JP4130815B2 (ja) 2004-07-16 2008-08-06 松下電器産業株式会社 半導体受光素子及びその製造方法
JP2006033493A (ja) 2004-07-16 2006-02-02 Matsushita Electric Ind Co Ltd 撮像装置
US7880255B2 (en) 2004-07-19 2011-02-01 Micron Technology, Inc. Pixel cell having a grated interface
DE102004036220B4 (de) 2004-07-26 2009-04-02 Jürgen H. Werner Verfahren zur Laserdotierung von Festkörpern mit einem linienfokussierten Laserstrahl
US7501666B2 (en) 2004-08-06 2009-03-10 Sumitomo Electric Industries, Ltd. Method for forming p-type semiconductor region, and semiconductor element
KR20060020400A (ko) 2004-08-31 2006-03-06 매그나칩 반도체 유한회사 광 손실을 감소시킨 시모스 이미지센서의 제조방법
KR100652379B1 (ko) 2004-09-11 2006-12-01 삼성전자주식회사 Ｃｍｏｓ 이미지 센서 및 그 제조 방법
US7235812B2 (en) 2004-09-13 2007-06-26 International Business Machines Corporation Method of creating defect free high Ge content (>25%) SiGe-on-insulator (SGOI) substrates using wafer bonding techniques
US7425460B2 (en) 2004-09-17 2008-09-16 California Institute Of Technology Method for implementation of back-illuminated CMOS or CCD imagers
TWI244214B (en) 2004-09-23 2005-11-21 Au Optronics Corp Semiconductor device and method of fabricating a LTPS film
US7633097B2 (en) 2004-09-23 2009-12-15 Philips Lumileds Lighting Company, Llc Growth of III-nitride light emitting devices on textured substrates
WO2006086014A2 (en) 2004-09-24 2006-08-17 President And Fellows Of Harvard College Method for manufacturing of silicon-based detektors having laser-microstructured sulfur-doped surface layers
US7259413B2 (en) 2004-09-28 2007-08-21 Micron Technology, Inc. High dynamic range image sensor
CN100344001C (zh) 2004-09-30 2007-10-17 无锡尚德太阳能电力有限公司 一种制备多晶硅绒面的方法
KR20120096586A (ko) 2004-10-20 2012-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
JP4867152B2 (ja) 2004-10-20 2012-02-01 ソニー株式会社 固体撮像素子
JP4501633B2 (ja) 2004-10-28 2010-07-14 ソニー株式会社 固体撮像素子とその製造方法
KR100682898B1 (ko) * 2004-11-09 2007-02-15 삼성전자주식회사 적외선을 이용한 영상 장치 및 그의 영상 식별 방법
CA2585190A1 (en) 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
US7737053B2 (en) 2004-11-18 2010-06-15 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and manufacturing method of the same
US7645337B2 (en) 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
JP2006147991A (ja) 2004-11-24 2006-06-08 Canon Inc 固体撮像素子及びそれを有する光学機器
WO2006057818A2 (en) 2004-11-24 2006-06-01 Nanosys, Inc. Contact doping and annealing systems and processes for nanowire thin films
US8637340B2 (en) 2004-11-30 2014-01-28 Solexel, Inc. Patterning of silicon oxide layers using pulsed laser ablation
US7446807B2 (en) 2004-12-03 2008-11-04 Micron Technology, Inc. Imager pixel with capacitance for boosting reset voltage
US20060118781A1 (en) 2004-12-03 2006-06-08 Omnivision Technologies, Inc. Image sensor and pixel having a polysilicon layer over the photodiode
US7521326B2 (en) 2004-12-03 2009-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2006173381A (ja) 2004-12-16 2006-06-29 Toyota Motor Corp 光起電力素子
KR100690880B1 (ko) 2004-12-16 2007-03-09 삼성전자주식회사 픽셀별 광감도가 균일한 이미지 센서 및 그 제조 방법
CN101084290B (zh) 2004-12-21 2012-07-18 日立金属株式会社 荧光材料以及其制造方法，使用荧光材料的放射线检测器，与x射线ct装置
US7342268B2 (en) 2004-12-23 2008-03-11 International Business Machines Corporation CMOS imager with Cu wiring and method of eliminating high reflectivity interfaces therefrom
TWI269355B (en) 2004-12-29 2006-12-21 Ind Tech Res Inst Quantum-dot infrared photodetector
KR100660320B1 (ko) 2004-12-30 2006-12-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그의 제조방법
JP2006190757A (ja) 2005-01-05 2006-07-20 Konica Minolta Holdings Inc 有機半導体層の形成方法および有機薄膜トランジスタの製造方法
US7551059B2 (en) 2005-01-06 2009-06-23 Goodrich Corporation Hybrid infrared detector array and CMOS readout integrated circuit with improved dynamic range
NZ556251A (en) 2005-01-12 2010-05-28 Resmed Ltd Reinforcing member for a patient interface
WO2006078319A1 (en) 2005-01-19 2006-07-27 Massachusetts Institute Of Technology Light trapping in thin film solar cells using textured photonic crystal
US7256112B2 (en) 2005-01-20 2007-08-14 Chartered Semiconductor Manufacturing, Ltd Laser activation of implanted contact plug for memory bitline fabrication
JP2006210701A (ja) 2005-01-28 2006-08-10 Sanyo Electric Co Ltd 固体撮像装置及びその製造方法
US7378635B2 (en) 2005-02-11 2008-05-27 Micron Technology, Inc. Method and apparatus for dark current and hot pixel reduction in active pixel image sensors
US20060180885A1 (en) 2005-02-14 2006-08-17 Omnivision Technologies, Inc. Image sensor using deep trench isolation
JP4839632B2 (ja) 2005-02-25 2011-12-21 ソニー株式会社 撮像装置
US7202543B2 (en) 2005-03-07 2007-04-10 Micron Technology, Inc. Method and structure to reduce optical crosstalk in a solid state imager
US7611060B2 (en) 2005-03-11 2009-11-03 Hand Held Products, Inc. System and method to automatically focus an image reader
US8317327B2 (en) * 2005-03-16 2012-11-27 Lc Technologies, Inc. System and method for eyeball surface topography as a biometric discriminator
JP4826111B2 (ja) 2005-03-17 2011-11-30 ソニー株式会社 固体撮像素子および固体撮像素子の製造方法および画像撮影装置
US7642205B2 (en) 2005-04-08 2010-01-05 Mattson Technology, Inc. Rapid thermal processing using energy transfer layers
FR2884351A1 (fr) 2005-04-11 2006-10-13 St Microelectronics Sa Procede de fabrication d'un circuit integre comprenant une photodiode et circuit integre correspondant.
US7619670B2 (en) 2005-04-26 2009-11-17 Micron Technology Inc. Rolling shutter for prevention of blooming
US20090101197A1 (en) 2005-05-11 2009-04-23 Mitsubishi Electric Corporation Solar Battery and Production Method Thereof
US7375378B2 (en) 2005-05-12 2008-05-20 General Electric Company Surface passivated photovoltaic devices
WO2006122774A1 (en) 2005-05-17 2006-11-23 Interuniversitair Microelektronica Centrum Vzw Method for the production of photovoltaic cells
US7291539B2 (en) 2005-06-01 2007-11-06 International Business Machines Corporation Amorphization/templated recrystallization method for hybrid orientation substrates
US7586601B2 (en) 2005-06-14 2009-09-08 Ebstein Steven M Applications of laser-processed substrate for molecular diagnostics
US7317579B2 (en) 2005-08-11 2008-01-08 Micron Technology, Inc. Method and apparatus providing graded-index microlenses
US7605397B2 (en) 2005-08-17 2009-10-20 Digirad Corporation Capacitive bypass
JP5110519B2 (ja) 2005-08-30 2012-12-26 国立大学法人静岡大学 半導体測距素子及び固体撮像装置
US7315014B2 (en) 2005-08-30 2008-01-01 Micron Technology, Inc. Image sensors with optical trench
US7432148B2 (en) 2005-08-31 2008-10-07 Micron Technology, Inc. Shallow trench isolation by atomic-level silicon reconstruction
US20070052050A1 (en) 2005-09-07 2007-03-08 Bart Dierickx Backside thinned image sensor with integrated lens stack
KR100806577B1 (ko) 2005-09-07 2008-02-28 엘지전자 주식회사 생체 신호 측정 장치 및 방법
US20080173620A1 (en) 2005-09-26 2008-07-24 Ultratech, Inc. Apparatuses and methods for irradiating a substrate to avoid substrate edge damage
US7666766B2 (en) 2005-09-27 2010-02-23 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus, method for forming film, and method for manufacturing photoelectric conversion device
US7608823B2 (en) 2005-10-03 2009-10-27 Teledyne Scientific & Imaging, Llc Multimode focal plane array with electrically isolated commons for independent sub-array biasing
JP2007122237A (ja) 2005-10-26 2007-05-17 Mitsubishi Electric Corp 偽造判定用撮像装置及び個人識別装置
WO2007056753A2 (en) 2005-11-08 2007-05-18 General Atomics Apparatus and methods for use in flash detection
JP4708965B2 (ja) 2005-11-10 2011-06-22 キヤノン株式会社 撮像装置
US20070115554A1 (en) 2005-11-22 2007-05-24 Breitung Eric M Antireflective surfaces, methods of manufacture thereof and articles comprising the same
US11211510B2 (en) 2005-12-13 2021-12-28 The Boeing Company Multijunction solar cell with bonded transparent conductive interlayer
US7456452B2 (en) 2005-12-15 2008-11-25 Micron Technology, Inc. Light sensor having undulating features for CMOS imager
KR100761829B1 (ko) 2005-12-15 2007-09-28 삼성전자주식회사 반도체 소자, 시모스 이미지 센서, 반도체 소자의 제조방법및 시모스 이미지 센서의 제조방법
US7576404B2 (en) 2005-12-16 2009-08-18 Icemos Technology Ltd. Backlit photodiode and method of manufacturing a backlit photodiode
US8753990B2 (en) 2005-12-21 2014-06-17 University Of Virginia Patent Foundation Systems and methods of laser texturing and crystallization of material surfaces
CN102420271B (zh) 2005-12-21 2016-07-06 太阳能公司 背面触点太阳能电池及制造方法
WO2008127807A1 (en) 2007-03-09 2008-10-23 University Of Virginia Patent Foundation Systems and methods of laser texturing of material surfaces and their applications
JP2007180642A (ja) 2005-12-27 2007-07-12 Swcc Showa Device Technology Co Ltd 高精細画像シリアルデータ伝送装置
JP2007180643A (ja) 2005-12-27 2007-07-12 Sony Corp スイッチ装置、信号伝送回路装置及びスイッチング方法
KR100741931B1 (ko) * 2005-12-28 2007-07-23 동부일렉트로닉스 주식회사 이미지 센서 및 그의 제조방법
KR101181820B1 (ko) 2005-12-29 2012-09-11 삼성에스디아이 주식회사 태양 전지의 제조 방법
KR100809323B1 (ko) 2006-01-31 2008-03-05 삼성전자주식회사 크로스토크가 감소하고 감도가 증가한 이미지 센서
KR20070081773A (ko) * 2006-02-13 2007-08-17 스마트 와이어레스 가부시키가이샤 적외선 얼굴 인증장치, 이를 구비하는 휴대 단말기 및보안장치
WO2007095282A2 (en) 2006-02-13 2007-08-23 Max-Viz, Inc. System for and method of synchronous acquisition of pulsed source light in performance of monitoring aircraft flight operation
US7804148B2 (en) 2006-02-16 2010-09-28 International Business Machines Corporation Opto-thermal mask including aligned thermal dissipative layer, reflective layer and transparent capping layer
US7621640B2 (en) 2006-02-17 2009-11-24 Beverly Lloyd Optical device for producing a virtual image
JP5092251B2 (ja) 2006-02-22 2012-12-05 住友電気工業株式会社 光検出装置
JP4992446B2 (ja) 2006-02-24 2012-08-08 ソニー株式会社 固体撮像装置及びその製造方法、並びにカメラ
US20070201859A1 (en) 2006-02-24 2007-08-30 Logitech Europe S.A. Method and system for use of 3D sensors in an image capture device
US7623165B2 (en) 2006-02-28 2009-11-24 Aptina Imaging Corporation Vertical tri-color sensor
US7648851B2 (en) 2006-03-06 2010-01-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating backside illuminated image sensor
US8008205B2 (en) 2006-03-08 2011-08-30 Sharp Kabushiki Kaisha Methods for producing a semiconductor device having planarization films
US7605440B2 (en) 2006-04-07 2009-10-20 Aptina Imaging Corporation Pixel cell isolation of charge storage and floating diffusion regions using doped wells
JP4965151B2 (ja) 2006-04-11 2012-07-04 ルネサスエレクトロニクス株式会社 固体撮像装置
JP2007287860A (ja) 2006-04-14 2007-11-01 Toshiba Corp 半導体装置の製造方法
US7777166B2 (en) 2006-04-21 2010-08-17 Cree, Inc. Solid state luminaires for general illumination including closed loop feedback control
JP4193870B2 (ja) 2006-05-09 2008-12-10 ソニー株式会社 固体撮像素子、撮像装置
US20100171948A1 (en) 2006-06-14 2010-07-08 President And Fellows Of Harvard College Metalized semiconductor substrates for raman spectroscopy
US8271063B2 (en) 2006-06-16 2012-09-18 Medtor Llc System and method for a non-invasive medical sensor
US7714368B2 (en) 2006-06-26 2010-05-11 Aptina Imaging Corporation Method and apparatus providing imager pixel array with grating structure and imager device containing the same
US7656024B2 (en) 2006-06-30 2010-02-02 Fairchild Semiconductor Corporation Chip module for complete power train
US20080000522A1 (en) 2006-06-30 2008-01-03 General Electric Company Photovoltaic device which includes all-back-contact configuration; and related processes
JP2008021875A (ja) 2006-07-13 2008-01-31 Toshiba Corp 固体撮像装置
US8355545B2 (en) 2007-04-10 2013-01-15 Lumidigm, Inc. Biometric detection using spatial, temporal, and/or spectral techniques
US8034724B2 (en) 2006-07-21 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7592593B2 (en) 2006-07-26 2009-09-22 Northrop Grumman Corporation Multi-band focal plane array
DE102006034786B4 (de) 2006-07-27 2011-01-20 Siltronic Ag Monokristalline Halbleiterscheibe mit defektreduzierten Bereichen und Verfahren zur Ausheilung GOI-relevanter Defekte in einer monokristallinen Halbleiterscheibe
KR20080014301A (ko) 2006-08-10 2008-02-14 삼성전자주식회사 딥트렌치 소자분리막을 포함하는 이면 조사형 ｃｍｏｓ이미지 센서 및 그 제조방법
KR100745991B1 (ko) 2006-08-11 2007-08-06 삼성전자주식회사 이미지 센서 및 그 제조 방법
WO2008025057A1 (en) 2006-08-31 2008-03-06 Newsouth Innovations Pty Limited Thin-film diode structure using a sacrificial doped dielectric layer
US8121356B2 (en) * 2006-09-15 2012-02-21 Identix Incorporated Long distance multimodal biometric system and method
US20090038669A1 (en) 2006-09-20 2009-02-12 Translucent Photonics, Inc. Thin Film Solar Cell III
FR2906405B1 (fr) 2006-09-22 2008-12-19 Commissariat Energie Atomique Procede de realisation de regions dopees dans un substrat et de cellule photovoltaique
JP4973115B2 (ja) 2006-10-16 2012-07-11 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および撮像装置
US7629582B2 (en) 2006-10-24 2009-12-08 Raytheon Company Dual band imager with visible or SWIR detectors combined with uncooled LWIR detectors
US7888159B2 (en) 2006-10-26 2011-02-15 Omnivision Technologies, Inc. Image sensor having curved micro-mirrors over the sensing photodiode and method for fabricating
US20080178932A1 (en) 2006-11-02 2008-07-31 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
US7651880B2 (en) 2006-11-04 2010-01-26 Sharp Laboratories Of America, Inc. Ge short wavelength infrared imager
DE102007012115A1 (de) 2006-11-30 2008-06-05 Osram Opto Semiconductors Gmbh Strahlungsdetektor
JP2010512664A (ja) 2006-12-11 2010-04-22 ルーメンツ リミテッド ライアビリティ カンパニー 酸化亜鉛多接合光電池及び光電子装置
US7763913B2 (en) 2006-12-12 2010-07-27 Aptina Imaging Corporation Imaging method, apparatus, and system providing improved imager quantum efficiency
JP5147226B2 (ja) 2006-12-15 2013-02-20 株式会社日立製作所 固体撮像素子、光検出器及びこれを用いた認証装置
JP2008160730A (ja) 2006-12-26 2008-07-10 Nikon Corp 信号ムラを修正する画像処理装置、較正方法、撮像装置、画像処理プログラム、および画像処理方法
JP4609428B2 (ja) 2006-12-27 2011-01-12 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および撮像装置
KR101364997B1 (ko) 2007-01-11 2014-02-19 삼성디스플레이 주식회사 백라이트 어셈블리 및 이를 구비한 표시 장치
US7582515B2 (en) 2007-01-18 2009-09-01 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US7808538B2 (en) 2007-01-22 2010-10-05 Omnivision Technologies, Inc. Image sensors with blooming reduction mechanisms
JP2008181970A (ja) 2007-01-23 2008-08-07 Sharp Corp アライメントマーク形成方法、アライメント方法、半導体装置の製造方法および固体撮像装置の製造方法
US20080179762A1 (en) 2007-01-25 2008-07-31 Au Optronics Corporation Layered structure with laser-induced aggregation silicon nano-dots in a silicon-rich dielectric layer, and applications of the same
JP4749351B2 (ja) 2007-01-30 2011-08-17 富士通株式会社 赤外線検出器
US7633629B2 (en) 2007-02-05 2009-12-15 Palo Alto Research Center Incorporated Tuning optical cavities
US7803647B2 (en) 2007-02-08 2010-09-28 Taiwan Semiconductor Manufacturing Company, Ltd. Optical transmission improvement on multi-dielectric structure in advance CMOS imager
US8289430B2 (en) 2007-02-09 2012-10-16 Gentex Corporation High dynamic range imaging device
US20080191310A1 (en) 2007-02-12 2008-08-14 Weng-Jin Wu By-product removal for wafer bonding process
US20080198251A1 (en) 2007-02-15 2008-08-21 Micron Technology, Inc. Method, apparatus, and system providing multiple pixel integration periods
US20080202577A1 (en) 2007-02-16 2008-08-28 Henry Hieslmair Dynamic design of solar cell structures, photovoltaic modules and corresponding processes
AU2007346981B2 (en) 2007-02-16 2013-08-22 Mitsubishi Heavy Industries, Ltd. Photovoltaic device and process for producing same
KR100825808B1 (ko) 2007-02-26 2008-04-29 삼성전자주식회사 후면 조명 구조의 이미지 센서 및 그 이미지 센서 제조방법
US7498650B2 (en) 2007-03-08 2009-03-03 Teledyne Licensing, Llc Backside illuminated CMOS image sensor with pinned photodiode
US7468649B2 (en) 2007-03-14 2008-12-23 Flextronics International Usa, Inc. Isolated power converter
US20080223436A1 (en) 2007-03-15 2008-09-18 Guardian Industries Corp. Back reflector for use in photovoltaic device
WO2008113067A2 (en) 2007-03-15 2008-09-18 Johns Hopkins University Deep submicron and nano cmos single photon photodetector pixel with event based circuits for readout data-rate reduction
EP2135292A2 (en) 2007-03-16 2009-12-23 BP Corporation North America Inc. Solar cells
EP1976001A3 (en) 2007-03-26 2012-08-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7728274B2 (en) 2007-03-30 2010-06-01 Subrahmanyam Pilla Imaging system with negative electron affinity photocathode
US9508890B2 (en) 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US20080251812A1 (en) 2007-04-16 2008-10-16 Woo Sik Yoo Heteroepitaxial Crystal Quality Improvement
EP2432015A1 (en) 2007-04-18 2012-03-21 Invisage Technologies, Inc. Materials, systems and methods for optoelectronic devices
KR20080097709A (ko) 2007-05-03 2008-11-06 동부일렉트로닉스 주식회사 이미지 센서 및 그의 제조방법
TWI436474B (zh) 2007-05-07 2014-05-01 Sony Corp A solid-state image pickup apparatus, a manufacturing method thereof, and an image pickup apparatus
JP4325703B2 (ja) 2007-05-24 2009-09-02 ソニー株式会社 固体撮像装置、固体撮像装置の信号処理装置および信号処理方法、ならびに撮像装置
DE102007024478A1 (de) 2007-05-25 2008-11-27 Friedrich-Schiller-Universität Jena Fotoempfindliches Halbleiterbauelement
TW200849462A (en) 2007-06-11 2008-12-16 Taiwan Semiconductor Mfg Isolation structure for image sensor device
US20080309913A1 (en) 2007-06-14 2008-12-18 James John Fallon Systems and methods for laser radar imaging for the blind and visually impaired
KR100870821B1 (ko) 2007-06-29 2008-11-27 매그나칩 반도체 유한회사 후면 조사 이미지 센서
US7825966B2 (en) 2007-06-29 2010-11-02 Omnivision Technologies, Inc. High dynamic range sensor with blooming drain
US8013238B2 (en) 2007-07-09 2011-09-06 Energy Related Devices, Inc. Micro concentrators elastically coupled with spherical photovoltaic cells
JP4304638B2 (ja) 2007-07-13 2009-07-29 オムロン株式会社 Ｃｉｓ系太陽電池及びその製造方法
JP4910923B2 (ja) 2007-07-20 2012-04-04 ソニー株式会社 撮像装置、撮像方法及び撮像プログラム
US8194232B2 (en) 2007-07-24 2012-06-05 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, position control method and position control system, and device manufacturing method
JP4379500B2 (ja) 2007-07-30 2009-12-09 ソニー株式会社 生体撮像装置
US20090039397A1 (en) 2007-08-09 2009-02-12 Micromedia Technology Corp. Image sensor structure
CN101778598B (zh) 2007-08-10 2013-03-27 皇家飞利浦电子股份有限公司 医学系统中的运动检测
JP2009055479A (ja) 2007-08-28 2009-03-12 Panasonic Corp イメージセンサ及び電磁波イメージング装置
US20090056797A1 (en) 2007-08-28 2009-03-05 Blue Square Energy Incorporated Photovoltaic Thin-Film Solar Cell and Method Of Making The Same
US8143514B2 (en) 2007-09-11 2012-03-27 Silicon China (Hk) Limited Method and structure for hydrogenation of silicon substrates with shaped covers
US8638363B2 (en) 2009-02-18 2014-01-28 Google Inc. Automatically capturing information, such as capturing information using a document-aware device
US20090078316A1 (en) 2007-09-24 2009-03-26 Qualcomm Incorporated Interferometric photovoltaic cell
JP5151375B2 (ja) 2007-10-03 2013-02-27 ソニー株式会社 固体撮像装置およびその製造方法および撮像装置
US8446470B2 (en) 2007-10-04 2013-05-21 Magna Electronics, Inc. Combined RGB and IR imaging sensor
US8269181B2 (en) 2007-10-10 2012-09-18 Positron Corporation Avalanche pixel sensors and related methods
US8035343B2 (en) 2007-10-15 2011-10-11 Black & Decker Inc. Method for balancing cells in a battery pack
US20090109305A1 (en) 2007-10-31 2009-04-30 Tiejun Dai One-step black level calibration for image sensors
US20090114630A1 (en) 2007-11-05 2009-05-07 Hawryluk Andrew M Minimization of surface reflectivity variations
WO2009067483A1 (en) 2007-11-19 2009-05-28 Applied Materials, Inc. Solar cell contact formation process using a patterned etchant material
JP5286046B2 (ja) 2007-11-30 2013-09-11 株式会社半導体エネルギー研究所 光電変換装置の製造方法
JP5248995B2 (ja) 2007-11-30 2013-07-31 株式会社半導体エネルギー研究所 光電変換装置の製造方法
TWI390008B (zh) 2007-12-12 2013-03-21 Solar cells and their light-emitting conversion layer
CN101465361A (zh) 2007-12-18 2009-06-24 台湾积体电路制造股份有限公司 图像传感器元件的隔离结构
JP5167799B2 (ja) 2007-12-18 2013-03-21 ソニー株式会社 固体撮像装置およびカメラ
US7880168B2 (en) 2007-12-19 2011-02-01 Aptina Imaging Corporation Method and apparatus providing light traps for optical crosstalk reduction
US8981200B2 (en) 2007-12-19 2015-03-17 Tel Solar Ag Method for obtaining high performance thin film devices deposited on highly textured substrates
US20090242019A1 (en) 2007-12-19 2009-10-01 Silexos, Inc Method to create high efficiency, low cost polysilicon or microcrystalline solar cell on flexible substrates using multilayer high speed inkjet printing and, rapid annealing and light trapping
US7897942B1 (en) 2007-12-20 2011-03-01 Kla-Tencor Corporation Dynamic tracking of wafer motion and distortion during lithography
DE102008026839A1 (de) 2007-12-20 2009-07-02 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements in Dünnschichttechnik
EP2398055B1 (en) 2008-01-10 2012-12-12 Stmicroelectronics Sa Pixel circuit for global electronic shutter
US8743247B2 (en) 2008-01-14 2014-06-03 International Business Machines Corporation Low lag transfer gate device
WO2009100015A2 (en) 2008-01-31 2009-08-13 President & Fellows Of Harvard College Engineering flat surfaces on materials doped via pulsed laser irradiation
US7982177B2 (en) 2008-01-31 2011-07-19 Omnivision Technologies, Inc. Frontside illuminated image sensor comprising a complex-shaped reflector
US8895839B2 (en) 2008-02-01 2014-11-25 President And Fellows Of Harvard College Multijunction photovoltaic device
US7989859B2 (en) 2008-02-08 2011-08-02 Omnivision Technologies, Inc. Backside illuminated imaging sensor with silicide light reflecting layer
US7800192B2 (en) 2008-02-08 2010-09-21 Omnivision Technologies, Inc. Backside illuminated image sensor having deep light reflective trenches
US8063465B2 (en) 2008-02-08 2011-11-22 Omnivision Technologies, Inc. Backside illuminated imaging sensor with vertical pixel sensor
US7741666B2 (en) 2008-02-08 2010-06-22 Omnivision Technologies, Inc. Backside illuminated imaging sensor with backside P+ doped layer
US20090200631A1 (en) 2008-02-08 2009-08-13 Omnivision Technologies, Inc. Backside illuminated imaging sensor with light attenuating layer
US8183510B2 (en) 2008-02-12 2012-05-22 Omnivision Technologies, Inc. Image sensor with buried self aligned focusing element
KR101028085B1 (ko) 2008-02-19 2011-04-08 엘지전자 주식회사 비대칭 웨이퍼의 식각방법, 비대칭 식각의 웨이퍼를포함하는 태양전지, 및 태양전지의 제조방법
US20090211627A1 (en) 2008-02-25 2009-08-27 Suniva, Inc. Solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation
US7816220B2 (en) 2008-02-27 2010-10-19 President & Fellows Of Harvard College Laser-induced structuring of substrate surfaces
JP2009206356A (ja) 2008-02-28 2009-09-10 Toshiba Corp 固体撮像装置およびその製造方法
US8058615B2 (en) 2008-02-29 2011-11-15 Sionyx, Inc. Wide spectral range hybrid image detector
US20090227061A1 (en) 2008-03-05 2009-09-10 Nicholas Bateman Establishing a high phosphorus concentration in solar cells
EP2105972A3 (en) 2008-03-28 2015-06-10 Semiconductor Energy Laboratory Co, Ltd. Photoelectric conversion device and method for manufacturing the same
US7893464B2 (en) 2008-03-28 2011-02-22 Jds Uniphase Corporation Semiconductor photodiode and method of manufacture thereof
JP4968151B2 (ja) 2008-04-07 2012-07-04 コニカミノルタホールディングス株式会社 光センサ
EP2109143B1 (en) 2008-04-09 2013-05-29 Sony Corporation Solid-state imaging device, production method thereof, and electronic device
US20090256156A1 (en) 2008-04-09 2009-10-15 E-Phocus, Inc Hybrid imaging sensor with approximately equal potential photodiodes
US8077240B2 (en) 2008-04-23 2011-12-13 Inernational Business Machines Corporation Methods for enhancing quality of pixel sensor image frames for global shutter imaging
JP4697258B2 (ja) 2008-05-09 2011-06-08 ソニー株式会社 固体撮像装置と電子機器
US7759755B2 (en) 2008-05-14 2010-07-20 International Business Machines Corporation Anti-reflection structures for CMOS image sensors
EP2302705B1 (en) 2008-06-02 2018-03-14 LG Innotek Co., Ltd. Supporting substrate for fabrication of semiconductor light emitting device and semiconductor light emitting device using the same
JP2009290161A (ja) 2008-06-02 2009-12-10 Mitsubishi Electric Corp 光半導体装置
DE102008002270A1 (de) * 2008-06-06 2009-12-17 Robert Bosch Gmbh Multispektraler Sensor
CN102099870A (zh) 2008-06-11 2011-06-15 因特瓦克公司 用于在太阳能电池制作中使用的专用注入系统和方法
US7851698B2 (en) 2008-06-12 2010-12-14 Sunpower Corporation Trench process and structure for backside contact solar cells with polysilicon doped regions
US8207444B2 (en) 2008-07-01 2012-06-26 Sunpower Corporation Front contact solar cell with formed electrically conducting layers on the front side and backside
US20100074396A1 (en) 2008-07-07 2010-03-25 Siemens Medical Solutions Usa, Inc. Medical imaging with black silicon photodetector
US20100013036A1 (en) 2008-07-16 2010-01-21 Carey James E Thin Sacrificial Masking Films for Protecting Semiconductors From Pulsed Laser Process
US8159328B2 (en) 2008-07-16 2012-04-17 George William Luckhardt Biometric authentication and verification
US20100013039A1 (en) 2008-07-21 2010-01-21 Omnivision Technologies, Inc. Backside-illuminated imaging sensor including backside passivation
KR20100013649A (ko) 2008-07-31 2010-02-10 삼성전자주식회사 광전소자 및 이의 제조 방법
JP4875033B2 (ja) 2008-08-14 2012-02-15 株式会社東芝 光デバイス
US7847253B2 (en) 2008-08-15 2010-12-07 Sionyx, Inc. Wideband semiconducting light detector
CN101656273B (zh) 2008-08-18 2011-07-13 中芯国际集成电路制造(上海)有限公司 选择性发射极太阳能电池单元及其制造方法
US20100044552A1 (en) 2008-08-19 2010-02-25 Lockheed Martin Corporation Automatic simultaneous dual gain readout integrated circuit using threshold voltage shifts of mosfet bulk to source potential
KR101010286B1 (ko) 2008-08-29 2011-01-24 엘지전자 주식회사 태양 전지의 제조 방법
US20100051809A1 (en) 2008-09-02 2010-03-04 Princeton Lightwave, Inc. Monolithic Dual Band Imager
US7915154B2 (en) 2008-09-03 2011-03-29 Piwczyk Bernhard P Laser diffusion fabrication of solar cells
WO2010028177A1 (en) 2008-09-03 2010-03-11 Sionyx, Inc. High sensitivity photodetectors, imaging arrays, and high efficiency photovoltaic devices produced using ion implantation and femtosecond laser irradiation
FR2935839B1 (fr) 2008-09-05 2011-08-05 Commissariat Energie Atomique Capteur d'images cmos a reflexion lumineuse
US20100059385A1 (en) 2008-09-06 2010-03-11 Delin Li Methods for fabricating thin film solar cells
US7968834B2 (en) 2008-09-22 2011-06-28 Sionyx, Inc. Response-enhanced monolithic-hybrid pixel
WO2010033127A1 (en) 2008-09-22 2010-03-25 Sionyx, Inc. Response-enhanced monolithic-hybrid pixel
US8101856B2 (en) 2008-10-02 2012-01-24 International Business Machines Corporation Quantum well GaP/Si tandem photovoltaic cells
US7875948B2 (en) 2008-10-21 2011-01-25 Jaroslav Hynecek Backside illuminated image sensor
US7915652B2 (en) 2008-10-24 2011-03-29 Sharp Laboratories Of America, Inc. Integrated infrared and color CMOS imager sensor
EP2180513A1 (en) 2008-10-27 2010-04-28 Stmicroelectronics SA Near infrared/color image sensor
CN101404307A (zh) 2008-10-29 2009-04-08 中山大学 一种多晶硅太阳电池绒面制作方法
JP4862878B2 (ja) 2008-10-30 2012-01-25 ソニー株式会社 固体撮像装置、その製造方法および撮像装置
US20100109060A1 (en) 2008-11-06 2010-05-06 Omnivision Technologies Inc. Image sensor with backside photodiode implant
US8400537B2 (en) 2008-11-13 2013-03-19 Omnivision Technologies, Inc. Image sensors having gratings for color separation
CN101423942B (zh) 2008-11-13 2012-09-05 蒋冬 一种制备单晶硅绒面的碱腐蚀溶液及方法
US8125042B2 (en) 2008-11-13 2012-02-28 Samsung Electronics Co., Ltd. Semiconductor package and method of manufacturing the same
JP5353201B2 (ja) 2008-11-21 2013-11-27 ソニー株式会社 固体撮像装置の製造方法
KR20100057983A (ko) * 2008-11-24 2010-06-03 한국전자통신연구원 생체 인식 시스템의 다중 영상 획득 장치
US8487351B2 (en) 2008-11-28 2013-07-16 Samsung Electronics Co., Ltd. Image sensor and image sensing system including the same
US8093559B1 (en) 2008-12-02 2012-01-10 Hrl Laboratories, Llc Methods and apparatus for three-color infrared sensors
KR20100064699A (ko) 2008-12-05 2010-06-15 삼성전자주식회사 후면 조명 구조의 이미지 센서
US20100140768A1 (en) 2008-12-10 2010-06-10 Zafiropoulo Arthur W Systems and processes for forming three-dimensional circuits
US8124993B2 (en) 2008-12-17 2012-02-28 Palo Alto Research Center Incorporated Selective decomposition of nitride semiconductors to enhance LED light extraction
US20100147383A1 (en) 2008-12-17 2010-06-17 Carey James E Method and apparatus for laser-processing a semiconductor photovoltaic apparatus
CN101478013A (zh) 2008-12-30 2009-07-08 无锡尚德太阳能电力有限公司 一种反应离子刻蚀制备太阳电池硅片绒面的方法以及用该方法制造的太阳电池
US7745901B1 (en) 2009-01-29 2010-06-29 Sionyx, Inc. Highly-depleted laser doped semiconductor volume
KR101776955B1 (ko) 2009-02-10 2017-09-08 소니 주식회사 고체 촬상 장치와 그 제조 방법, 및 전자 기기
CN102317951B (zh) * 2009-02-11 2015-01-21 数据逻辑扫描公司 利用彩色成像器进行高分辨率光学代码成像的系统和方法
US8953149B2 (en) * 2009-02-17 2015-02-10 Microsoft Corporation CMOS three-dimensional image sensor detectors having reduced inter-gate capacitance, and enhanced modulation contrast
JP5185206B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 半導体光検出素子
JP5185205B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 半導体光検出素子
JP5185208B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 フォトダイオード及びフォトダイオードアレイ
JP5185207B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 フォトダイオードアレイ
JP5185157B2 (ja) 2009-02-25 2013-04-17 浜松ホトニクス株式会社 フォトダイオードの製造方法及びフォトダイオード
US20100224229A1 (en) 2009-03-09 2010-09-09 Pralle Martin U Multi-junction semiconductor photovoltaic apparatus and methods
US7964431B2 (en) 2009-03-19 2011-06-21 Twin Creeks Technologies, Inc. Method to make electrical contact to a bonded face of a photovoltaic cell
EP2234387B8 (en) 2009-03-24 2012-05-23 Sony Corporation Solid-state imaging device, driving method of solid-state imaging device, and electronic apparatus
US8604405B2 (en) 2009-03-31 2013-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Backside illuminated image sensor device with refractive index dependent layer thicknesses and method of forming the same
US8962376B2 (en) 2009-04-21 2015-02-24 The Silanna Group Pty Ltd Optoelectronic device with lateral pin or pin junction
US8207051B2 (en) 2009-04-28 2012-06-26 Sionyx, Inc. Semiconductor surface modification
KR101160112B1 (ko) 2009-04-29 2012-06-26 주식회사 효성 함몰전극형 태양전지의 제조방법
US20100300505A1 (en) 2009-05-26 2010-12-02 Chen Yung T Multiple junction photovolatic devices and process for making the same
US20100300507A1 (en) 2009-06-02 2010-12-02 Sierra Solar Power, Inc. High efficiency low cost crystalline-si thin film solar module
KR100984700B1 (ko) 2009-06-04 2010-10-01 엘지전자 주식회사 태양 전지 및 그 제조 방법
US8076746B2 (en) 2009-06-26 2011-12-13 Omnivision Technologies, Inc. Back-illuminated image sensors having both frontside and backside photodetectors
US8111724B2 (en) 2009-07-07 2012-02-07 International Business Machines Corporation Temperature control device for optoelectronic devices
CN101634026A (zh) 2009-08-26 2010-01-27 北京市太阳能研究所有限公司 一种制备单晶硅绒面的腐蚀液及方法
CN101634027A (zh) 2009-08-26 2010-01-27 北京市太阳能研究所有限公司 一种制备单晶硅绒面的方法
KR101139443B1 (ko) 2009-09-04 2012-04-30 엘지전자 주식회사 이종접합 태양전지와 그 제조방법
US8906670B2 (en) 2009-09-11 2014-12-09 Pacific Bioscience Of California, Inc. Zero-mode waveguides with non-reflecting walls
US8476681B2 (en) 2009-09-17 2013-07-02 Sionyx, Inc. Photosensitive imaging devices and associated methods
US9881965B2 (en) 2009-09-30 2018-01-30 Stmicroelectronics S.A. Back-side image sensor
JP5538811B2 (ja) 2009-10-21 2014-07-02 キヤノン株式会社 固体撮像素子
US20110095387A1 (en) 2009-10-22 2011-04-28 James Carey Semiconductor devices having an enhanced absorption region and associated methods
WO2011072179A2 (en) 2009-12-09 2011-06-16 Solexel, Inc. High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using semiconductor wafers
JP5297997B2 (ja) 2009-12-21 2013-09-25 株式会社日立メディアエレクトロニクス 個人認証装置及び移動通信端末
JP5172819B2 (ja) 2009-12-28 2013-03-27 株式会社東芝 固体撮像装置
KR20110079323A (ko) 2009-12-31 2011-07-07 주식회사 동부하이텍 이미지 센서 및 그 제조방법
JP5351066B2 (ja) 2010-01-25 2013-11-27 浜松ホトニクス株式会社 Ｏｃｔ装置
EP2531884A1 (en) 2010-02-03 2012-12-12 Battelle Memorial Institute Three-dimensional imaging system using a single lens system
JP2013527598A (ja) 2010-03-24 2013-06-27 サイオニクス、インク． 高められた電磁放射線検出を有するデバイス及び関連方法
JP5663925B2 (ja) 2010-03-31 2015-02-04 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
US8389377B2 (en) 2010-04-02 2013-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Sensor element isolation in a backside illuminated image sensor
CN101818348A (zh) 2010-04-02 2010-09-01 浙江大学 一步法制备单晶硅太阳能电池绒面的方法
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
US20120111396A1 (en) 2010-05-04 2012-05-10 Sionyx, Inc. Photovoltaic Devices and Associated Methods
CN201725796U (zh) 2010-06-01 2011-01-26 格科微电子（上海）有限公司 背面照光的cmos图像传感器
CN102270646A (zh) 2010-06-01 2011-12-07 格科微电子（上海）有限公司 背面照光的cmos图像传感器
KR101432016B1 (ko) 2010-06-01 2014-08-20 볼리 미디어 커뮤니케이션스 (센젠) 캄파니 리미티드 다중 스펙트럼 감광소자
US20120001841A1 (en) 2010-06-30 2012-01-05 Jeff Gokingco Identifying ambient light type and illuminance compensation using a plurality of photodetectors
US8390089B2 (en) 2010-07-27 2013-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor with deep trench isolation structure
DE102010038796B4 (de) 2010-08-02 2014-02-20 Von Ardenne Anlagentechnik Gmbh Dünnschichtsolarzelle und Verfahren zu ihrer Herstellung
JP5726005B2 (ja) 2010-08-02 2015-05-27 アイメックＩｍｅｃ Ｃｍｏｓ撮像装置アレイの製造方法
US8625013B2 (en) 2010-08-23 2014-01-07 Red.Com, Inc. Multi-exposure imaging
JP5218502B2 (ja) 2010-08-30 2013-06-26 ソニー株式会社 固体撮像装置の製造方法
JP2012054321A (ja) 2010-08-31 2012-03-15 Sony Corp 固体撮像素子及びその製造方法、並びに固体撮像装置及び撮像装置
US8378398B2 (en) 2010-09-30 2013-02-19 Omnivision Technologies, Inc. Photodetector isolation in image sensors
FR2969384A1 (fr) 2010-12-21 2012-06-22 St Microelectronics Sa Capteur d'image a intermodulation reduite
US8723094B2 (en) 2010-12-21 2014-05-13 Sionyx, Inc. Photodetecting imager devices having correlated double sampling and associated methods
KR20140014121A (ko) 2010-12-21 2014-02-05 사이오닉스, 아이엔씨. 기판 손상을 감소시키는 반도체 소자 및 관련 방법
FR2969385A1 (fr) 2010-12-21 2012-06-22 St Microelectronics Crolles 2 Capteur d'images a taux d'intermodulation réduit
JP2012156334A (ja) 2011-01-26 2012-08-16 Sony Corp 固体撮像装置、固体撮像装置の製造方法及び電子機器
KR20120092326A (ko) 2011-02-11 2012-08-21 서울옵토디바이스주식회사 광 결정 구조를 갖는 비극성 발광 다이오드 및 그것을 제조하는 방법
JP5708025B2 (ja) 2011-02-24 2015-04-30 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
JP5810551B2 (ja) 2011-02-25 2015-11-11 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
JP6299058B2 (ja) 2011-03-02 2018-03-28 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
DE102011013076A1 (de) 2011-03-04 2012-09-06 Rolls-Royce Deutschland Ltd & Co Kg Strahltriebwerksvorrichtung mit einem Nebenstromkanal
JP2012191005A (ja) 2011-03-10 2012-10-04 Sony Corp 固体撮像素子、固体撮像素子の製造方法および撮像装置
JP2012212349A (ja) 2011-03-31 2012-11-01 Hitachi Solutions Ltd 生体認証装置
US9083905B2 (en) 2011-04-26 2015-07-14 Semiconductor Components Industries, Llc Structured light imaging system
US20120291859A1 (en) 2011-05-17 2012-11-22 Christopher Vineis Multi-Junction Semiconductor Photovoltaic Apparatus and Methods
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US20120313205A1 (en) 2011-06-10 2012-12-13 Homayoon Haddad Photosensitive Imagers Having Defined Textures for Light Trapping and Associated Methods
CA2840267C (en) 2011-06-24 2017-11-14 Boly Media Communications (Shenzhen) Co., Ltd Multi-depth-of-field light-sensing device, system, depth of field extension method, and optical imaging system
US9153490B2 (en) 2011-07-19 2015-10-06 Sony Corporation Solid-state imaging device, manufacturing method of solid-state imaging device, manufacturing method of semiconductor device, semiconductor device, and electronic device
US20130168792A1 (en) 2011-09-16 2013-07-04 Sionyx, Inc. Three Dimensional Architecture Semiconductor Devices and Associated Methods
JP5794068B2 (ja) 2011-09-16 2015-10-14 ソニー株式会社 固体撮像素子および製造方法、並びに電子機器
US20130168803A1 (en) 2011-09-16 2013-07-04 Sionyx, Inc. Semiconductor-On-Insulator Devices and Associated Methods
US8865507B2 (en) 2011-09-16 2014-10-21 Sionyx, Inc. Integrated visible and infrared imager devices and associated methods
JP2013093553A (ja) 2011-10-04 2013-05-16 Canon Inc 光電変換装置及びその製造方法、並びに光電変換システム
KR101853333B1 (ko) 2011-10-21 2018-05-02 삼성전자주식회사 블랙 레벨 안정화를 위한 이미지 센서
US9593053B1 (en) 2011-11-14 2017-03-14 Hypersolar, Inc. Photoelectrosynthetically active heterostructures
JP5768684B2 (ja) 2011-11-29 2015-08-26 富士通株式会社 ステレオ画像生成装置、ステレオ画像生成方法及びステレオ画像生成用コンピュータプログラム
US9653627B2 (en) 2012-01-18 2017-05-16 Wostec, Inc. Arrangements with pyramidal features having at least one nanostructured surface and methods of making and using
US9373732B2 (en) 2012-02-07 2016-06-21 Semiconductor Components Industries, Llc Image sensors with reflective optical cavity pixels
US8772898B2 (en) 2012-02-09 2014-07-08 Omnivision Technologies, Inc. Lateral light shield in backside illuminated imaging sensors
US9419249B2 (en) 2012-04-13 2016-08-16 Asahi Kasei E-Materials Corporation Light extraction product for semiconductor light emitting device and light emitting device
US9659981B2 (en) 2012-04-25 2017-05-23 Taiwan Semiconductor Manufacturing Co., Ltd. Backside illuminated image sensor with negatively charged layer
US9136300B2 (en) 2013-01-11 2015-09-15 Digimarc Corporation Next generation imaging methods and systems
US9293500B2 (en) 2013-03-01 2016-03-22 Apple Inc. Exposure control for image sensors
KR20140147508A (ko) 2013-06-20 2014-12-30 삼성전자주식회사 이미지 센서
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods
US9559215B1 (en) 2015-12-23 2017-01-31 Intel Corporation Method and apparatus for making p-channel thin film transistors for OLED and LED active matrix flat panel displays

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002513176A (ja) * 1998-04-29 2002-05-08 カーネギー−メロン ユニバーシティ ２つの異なる波長の光を用いて対象者の眼を監視する装置および方法
JP2001024936A (ja) * 1999-07-09 2001-01-26 Matsushita Electric Ind Co Ltd 画像取込装置
JP2001257927A (ja) * 2000-03-09 2001-09-21 Technosonic:Kk 被写体追尾装置
JP2003308130A (ja) * 2002-04-15 2003-10-31 Matsushita Electric Ind Co Ltd 情報装置
JP2005339425A (ja) * 2004-05-31 2005-12-08 Sanyo Electric Co Ltd 本人認証装置
US20080002863A1 (en) * 2004-12-07 2008-01-03 Aoptix Technologies, Inc. Iris imaging using reflection from the eye
JP2006255430A (ja) * 2006-04-24 2006-09-28 Fujitsu Ltd 個人認識装置
WO2009016846A1 (ja) * 2007-08-02 2009-02-05 Panasonic Corporation 虹彩認証装置および虹彩認証システム
WO2011035188A2 (en) * 2009-09-17 2011-03-24 Sionyx, Inc. Photosensitive imaging devices and associated methods

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