CN103430288B - 用于金属及金属氧化物膜的蚀刻的方法 - Google Patents

用于金属及金属氧化物膜的蚀刻的方法 Download PDF

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CN103430288B
CN103430288B CN201280013237.2A CN201280013237A CN103430288B CN 103430288 B CN103430288 B CN 103430288B CN 201280013237 A CN201280013237 A CN 201280013237A CN 103430288 B CN103430288 B CN 103430288B
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J·张
王安川
N·英格尔
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Abstract

一种从包括含金属层与氧化硅层的基板选择性地蚀刻含金属膜的方法，包括以下步骤：使含氟气体流动到基板处理腔室的等离子体产生区域内；以及施加能量到所述含氟气体，以在所述等离子体产生区域中产生等离子体。所述等离子体包括氟自由基与氟离子。所述方法还包括以下步骤：过滤所述等离子体，以提供具有比氟离子更高浓度的氟自由基的反应性气体；以及使所述反应性气体流动到所述基板处理腔室的气体反应区域内。所述方法还包括以下步骤：使所述基板暴露于所述基板处理腔室的所述气体反应区域中的所述反应性气体。相较于所述反应性气体蚀刻所述氧化硅层而言，所述反应性气体以更高的蚀刻速率来蚀刻所述含金属层。

Description

用于金属及金属氧化物膜的蚀刻的方法
交互参照的相关申请案
本申请根据35U.S.C.§119(e)主张2011年3月14日提出申请的美国临时申请案第61/452,522号的优先权，所述美国临时申请案的内容出于所有目的在此藉由参照而整体地被并入到本文。
本申请还和2011年4月18日提出申请的美国非临时专利申请案第13/088,930号相关、和2011年10月3日提出申请的美国非临时专利申请案第13/251,663号相关、并且和同时提出申请的美国非临时专利申请案(代理人卷号A15600/T103010，客户卷号015600USA/DSM/PMD)相关，所述案件的内容分别出于所有目的在此藉由参照而整体地被并入到本文。
技术领域
藉由在基板表面上产生复杂图案化材料层的工艺是可以制造集成电路的。在基板上产生图案化材料需要可控的用于移除暴露材料的方法。化学蚀刻用于各种目的，包括将光刻胶中的图案转移到下方层内、将层予以薄化或增加已经存在于表面上的特征结构的横向尺寸。时常，期望具有能蚀刻一种材料比蚀刻另一材料更快的蚀刻工艺。这样的蚀刻工艺被称为对于第一材料具有选择性。由于材料、电路与工艺的多样性，已经以针对各种材料的选择性来发展蚀刻工艺。
用以制造半导体集成电路的等离子体沉积与蚀刻工艺已经广泛使用长达数十年。这些工艺通常涉及从气体形成等离子体，其中所述气体被暴露于处理腔室内的足以将气体予以离子化的功率的电场。所需要以形成这些等离子体的温度会比所需要以将同样的气体予以热离子化的温度更低得多。因此，等离子体产生工艺可用以在比仅藉由加热气体而可用的温度明显更低的腔室处理温度下产生反应性自由基与离子物种。这容许等离子体能从基板表面沉积和/或蚀刻材料，而不必将基板温度升高到高于会熔化、分解或以其他方式损坏基板上的材料的阀值。
示例性等离子体沉积工艺包括位于基板晶圆的暴露表面上的电介质材料(诸如氧化硅)的等离子体增强化学气相沉积(PECVD)。传统的PECVD涉及处理腔室中的气体和/或沉积前驱物的混合及从气体引发等离子体而产生会在基板上反应且沉积材料的反应性物种。等离子体通常靠近基板的暴露表面，以促进有效的反应产物的沉积。
相似地，等离子体蚀刻工艺包括以下步骤：使基板的选择部分暴露于等离子体引发的蚀刻物种，等离子体引发蚀刻物种会从基板化学地反应和/或物理地溅射出材料。可藉由调整蚀刻剂气体、等离子体激发能量与基板和充电等离子体物种之间的电偏压及其他参数来控制被等离子体蚀刻的材料的移除速率、选择性与方向。一些等离子体技术(诸如高密度等离子体化学气相沉积(HDP-CVD))倚赖同时的等离子体蚀刻与沉积，以在基板上沉积膜。
尽管等离子体环境相比于高温沉积环境大体上更不具有对于基板的破坏性，但等离子体环境仍产生制造挑战。对于会过度蚀刻(over-etch)浅沟渠与间隙的高能等离子体而言，蚀刻精确性会是问题。等离子体中的高能物种(特别是离子化物种)会在被沉积的材料中造成不希望的反应，这会不利地影响材料的性能。因此，需要能对等离子体成分提供更精确控制的系统与方法，其中所述等离子体成分在制造期间和基板晶圆接触。
概要
描述了系统与方法，以用于等离子体与基板晶圆的表面之间的环境的改善控制，其中所述基板晶圆被暴露于等离子体和/或等离子体的流出物。可至少部分地藉由设置在等离子体与基板之间的离子抑制元件来实现所述改善控制，所述离子抑制元件减少或消除抵达基板的多个被离子充电的物种。调整抵达基板表面的离子物种的浓度可容许在基板上的等离子体辅助蚀刻和/或沉积的期间的蚀刻速率、蚀刻选择性与沉积化学作用(及其他参数)的更精确控制。
在实施例中，提供一种从包括含金属层与氧化硅层的基板选择性地蚀刻含金属膜的方法。所述方法包括以下步骤：使含氟气体流动到基板处理腔室的等离子体产生区域内；及施加能量到所述含氟气体，以在所述等离子体产生区域中产生等离子体。所述等离子体包括氟自由基与氟离子。所述方法还包括以下步骤：过滤所述等离子体，以提供具有比氟离子更高浓度的氟自由基的反应性气体；以及使所述反应性气体流动到所述基板处理腔室的气体反应区域内。所述方法还包括以下步骤：使所述基板暴露于所述基板处理腔室的所述气体反应区域中的所述反应性气体。相较于所述反应性气体蚀刻所述氧化硅层而言，所述反应性气体以更高的蚀刻速率来蚀刻所述含金属层。
在另一实施例中，提供一种提供比介电膜蚀刻速率更高的含金属膜蚀刻速率的蚀刻工艺。所述工艺包括以下步骤：从含氟气体产生等离子体。所述等离子体包括氟自由基与氟离子。所述工艺还包括以下步骤：从所述等离子体移除一部分的氟离子，以提供具有比氟离子更高浓度的氟自由基的反应性气体；及使包括含金属层与介电层的基板暴露于所述反应性气体。相较于所述反应性气体蚀刻所述介电层而言，所述反应性气体以更高的蚀刻速率来蚀刻所述含金属层。
额外的实施例与特征部分地被揭露在以下的发明说明中且对于本领域技术人员在审阅本说明书后是明显的或可藉由实施本发明而被了解。可藉由本说明书中所描述的设施手段、组合与方法来了解且获得本发明的特征与优点。
附图简要说明
可藉由参考本说明书与附图的其余部分来实现对本发明的本质与优点的进一步了解，其中一些附图中所使用的类似参考标号指称类似的元件。在一些情况中，子符号关联于参考标号，且子符号在连字号之后，以此代表多个类似元件之一。当参考标号被提及而没有载明现有的子符号时，旨在指称所有这样的多个类似元件。
图1显示根据本发明实施例的处理系统的简化剖视图，所述处理系统包括处理腔室，所述处理腔室具有电容耦合等离子体(CCP)单元与喷头；
图2显示根据本发明实施例的处理系统的简化透视图，所述处理系统包括处理腔室，所述处理腔室具有CCP单元与喷头；
图3显示根据本发明实施例的通过处理系统的一对气体混合物的气体流动路径的简化示意图；
图4显示根据本发明实施例的处理系统的简化剖视图，所述处理系统包括处理腔室，所述处理腔室具有还作为离子抑制元件的喷头；
图5显示根据本发明实施例的处理系统的简化剖视图，所述处理系统包括处理腔室，所述处理腔室具有离子抑制板，所述离子抑制板使等离子体区域和气体反应区域分隔；
图6A显示根据本发明实施例的离子抑制元件的简化透视图；
图6B显示根据本发明实施例的还作为离子抑制元件的喷头的简化透视图；
图7A显示根据本发明实施例用于离子抑制元件中的开口的一些示例性孔洞几何形态；
图7B显示根据本发明实施例用于开口的孔洞几何形态的示意图；
图8显示根据本发明实施例的一对电极中的相对开口的示例性配置，其中所述对电极有助于在处理腔室中界定等离子体区域；
图9是示出根据本发明实施例的从包括含金属层与氧化硅层的基板中选择性地蚀刻含金属膜的示例性方法的简化流程图；及
图10是示出根据本发明实施例而提供比介电膜(诸如氧化硅膜和/或氮化硅膜)蚀刻速率更高的含金属膜蚀刻速率的示例性蚀刻工艺的简化流程图。
详细描述
描述系统与方法，以用于半导体处理腔室内的等离子体的产生与控制。等离子体可源自处理腔室内、源自处理腔室外的远端等离子体单元中、或源自上述两者。在腔室内，通过位于等离子体与基板晶圆之间的离子抑制元件的辅助，等离子体被包含住且等离子体和基板晶圆分离。在一些情况中，所述离子抑制元件还可作用成作为等离子体产生单元(例如电极)、气体/前驱物分布系统(例如喷头)和/或处理系统的另一部件的一部分。在额外的情况中，离子抑制元件可主要作用成用以界定等离子体产生区域与气体反应区域之间的分隔，其中所述气体反应区域在基板晶圆的暴露表面上蚀刻和/或沉积材料。
离子抑制元件作用成用以减少或消除从等离子体产生区域行进到基板的离子充电物种。未充电的中性与自由基物种可通过离子抑制件中的开口而在基板处反应。应注意，环绕基板的反应区域中的离子充电物种的完全消除并非总是期望的目标。在许多情况中，离子物种需要抵达基板，从而执行蚀刻和/或沉积工艺。在这些情况中，离子抑制件有助于将反应区域中的离子物种的浓度控制在对工艺有帮助的水平。
示例性处理系统配置
示例性处理系统配置包括设置在处理腔室内的离子抑制件，以控制抵达基板的等离子体激发物种的类型与量。在一些实施例中，离子抑制件单元可以是穿孔板，所述穿孔板还可作为等离子体产生单元的电极。在额外的实施例中，离子抑制件可以是能将气体与激发物种分布到和基板接触的反应区域的喷头。在又更多实施例中，可藉由穿孔板离子抑制件与喷头来实现离子抑制，其中等离子体激发物种通过穿孔板离子抑制件与喷头两者而抵达反应区域。
图1和图2分别显示处理系统的简化剖视图与透视图，所述处理系统包括离子抑制件110与喷头104，离子抑制件110作为电容耦合等离子体(capacitivelycoupled plasma,CCP)单元102的一部分，喷头104也可对离子抑制作出贡献。处理系统还能可选地包括位于处理腔室100外的部件，诸如流体供应系统114。处理系统100可保持不同于周围压力的内部压力。例如，处理腔室内的压力可从约1mTorr到约100Torr。
CCP单元102可作用成在处理腔室100内产生等离子体。CCP单元102的部件可包括盖或热电极106与离子抑制元件110(在此也称为离子抑制件)。在一些实施例中，盖106与离子抑制件110是导电电极，所述导电电极可相对于彼此被电偏压以产生强到足以将所述电极之间的气体予以离子化成等离子体的电场。电绝缘体108可分离盖106与离子抑制件110电极，以避免所述盖106电极及所述离子抑制件110电极在等离子体被产生时会短路。盖106、绝缘体108与离子抑制件110的等离子体暴露表面可在CCP单元102中界定等离子体激发区域112。
等离子体产生气体可从气体供应系统114经由气体入口116行进到等离子体激发区域112内。等离子体产生气体可用以在激发区域112中引发等离子体，或可维持已经被形成的等离子体。在一些实施例中，等离子体产生气体在经由入口116向下行进到CCP单元102之前，等离子体产生气体可在设置于处理腔室100外的远端等离子体系统(未示出)中已经至少部分地被转变成等离子体激发物种。当等离子体激发物种抵达等离子体激发区域112时，所述等离子体激发物种可在CCP单元102中进一步被激发，或通过等离子体激发区域而不进行进一步激发。在一些操作中，由CCP单元102所提供的增加的激发的程度可随着时间改变，取决于基板处理顺序和/或条件。
等离子体产生气体和/或等离子体激发物种可通过盖106中的多个孔洞(未示出)，以为了能更均匀地输送到等离子体激发区域112内。示例性配置包括使入口116开放到藉由盖106和等离子体激发区域112分隔的气体供应区域120内，以致气体/物种流动通过盖106中的孔洞到等离子体激发区域112内。可选择结构与操作特征，以避免明显的从等离子体激发区域112回流到供应区域120、入口116与流体供应系统114内的等离子体回流。结构特征可包括盖106中的孔洞的尺寸和剖面几何形态的选择，其中所述孔洞的尺寸和剖面几何形态会将回流等离子体予以停止(deactivate)，如下文参照图7A和图7B所述。操作特征可包括维持气体供应区域120与等离子体激发区域112之间的压力差，其中所述压力差可维持等离子体通过离子抑制件110的单一方向流动。
如上所述，盖106与离子抑制件110可分别作用成第一电极与第二电极，从而盖106和/或离子抑制件110可接收电荷。在这些配置中，电功率(例如RF功率)可被施加到盖106、离子抑制件110或上述两者。例如，电功率可被施加到盖106，而离子抑制件110被接地。基板处理系统可包括RF产生器140，RF产生器140提供电功率到盖106和/或离子抑制件110。被充电的盖106可促进等离子体在等离子体激发区域112内的均匀分布(即减少局部等离子体)。为了使等离子体在等离子体激发区域112中的形成成为可能，绝缘体108可将盖106与离子抑制件110予以电绝缘。绝缘体108可由陶瓷制成且可具有高击穿电压以避免发出火花(sparking)。CCP单元102可进一步包括冷却单元(未示出)，冷却单元包括一个或多个冷却流体通道以利用循环冷却剂(例如水)来冷却被暴露于等离子体的表面。
离子抑制件110可包括多个孔洞122，所述孔洞122能抑制被离子充电的物种迁移出等离子体激发区域112，同时容许未被充电的中性或自由基物种能通过离子抑制件110到被引发的气体输送区域124内。这些未被充电的物种可包括随同较不具反应性的载体气体被传送通过孔洞122的高反应性物种。如上所述，离子物种通过孔洞122的迁移可被减少，并且在一些情况中可完全地被抑制。控制离子物种通过离子抑制件110的量提供了对于和下方晶圆基板接触的气体混合物的增强控制，这进而可增强对于气体混合物的沉积和/或蚀刻特征的控制。例如，气体混合物的离子浓度的调整可显著地改变所述气体混合物的蚀刻选择性(例如SiNx:SiOx蚀刻比例、金属:SiOx蚀刻比例、金属:SiNx蚀刻比例、多晶硅:SiOx蚀刻比例等)。这还可改变被沉积的电介质材料的共形性与可流动性之间的平衡。
所述多个孔洞122可配置成控制被引发的气体(即离子、自由基和/或中性物种)通过离子抑制件110的通过。例如，孔洞的深宽比(即孔洞直径对长度)和/或孔洞的几何形态可经控制，从而减少在被引发的气体中的被离子充电的物种通过离子抑制件110的流量。离子抑制件110中的孔洞可包括面对等离子体激发区域112的锥状化部分及面对喷头104的圆柱形部分。圆柱形部分的形状和尺寸可经设计，以控制离子物种通过到喷头104的流量。可调整的电偏压也可被施加到离子抑制件110作为控制离子物种通过抑制件的流量的额外方式。
喷头104设置在CCP单元102的离子抑制件110与气体反应区域130(即气体引发区域)之间，其中所述气体反应区域130和可被装设在底座150上的基板接触。气体与等离子体激发物种可通过离子抑制件110到被引发的气体输送区域124内，其中所述气体输送区域124被界定在离子抑制件110与喷头104之间。这些气体与物种的一部分可进一步通过喷头104到和基板接触的气体反应区域130内。
喷头可以是双区域喷头，所述双区域喷头具有第一组通道126与第二组通道，第一组通道126用以容许等离子体激发物种的通过，第二组通道输送第二气体/前驱物混合物到气体反应/引发区域130内。此两组通道避免等离子体激发物种与第二气体/前驱物混合物结合，直到所述等离子体激发物种及所述第二气体/前驱物混合物抵达气体反应区域130。在一些实施例中，离子抑制件110中的一个或多个孔洞122可和喷头104中的一个或多个通道126对准，以容许至少一些等离子体激发物种能通过孔洞122和通道126而不会改变所述至少一些等离子体激发物种的流动方向。在额外的实施例中，第二组通道可在面对气体反应区域130的开口处具有环形形状，并且这些环形开口可绕着第一组通道126的圆形开口而同心地对准。
喷头104中的第二组通道可流体地耦接到源气体/前驱物混合物(未示出)，其中所述源气体/前驱物混合物经选择以用于待执行的工艺。例如，当处理系统配置成执行电介质材料(诸如二氧化硅(SiOx))的沉积时，气体/前驱物混合物可包括含硅气体或前驱物(诸如硅烷、二硅烷、TSA、DSA、TEOS、OMCTS、TMDSO、及其他含硅材料)。所述混合物可在气体反应区域130中和氧化气体混合物反应，其中所述氧化气体混合物可包括等离子体激发物种(诸如被等离子体产生的自由基氧(O)、被引发的分子氧(O2)、及臭氧(O3)、及其他物种)。当物种移动通过离子抑制件110中的孔洞，等离子体激发物种中过量的离子可被减少，且当物种移动通过喷头104中的通道126，等离子体激发物种中过量的离子可被进一步减少。在另一示例中，当处理系统配置成在基板表面上执行蚀刻时，源气体/前驱物混合物可包括蚀刻剂(诸如氧化剂)、卤素、水蒸气和/或载体气体，所述蚀刻剂、卤素、水蒸气和/或载体气体在气体反应区域130中和从喷头104中的第一组通道所分配的等离子体激发物种混合。
处理系统可进一步包括功率供应器140，功率供应器140电耦接到CCP单元102以提供电功率到盖106和/或离子抑制件110而在等离子体激发区域112中产生等离子体。功率供应器可配置成输送可调整的功率量到CCP单元102，取决于所执行的工艺。例如，在沉积工艺中，可调整被输送到CCP单元102的功率，以设定沉积层的共形性。被沉积的介电膜通常在较低的等离子体功率下是较可流动的，并且当等离子体功率被增加时能从可流动的改变为共形的。例如，当等离子体功率从约1000瓦被降低到约100瓦或更低(例如约900、800、700、600或500瓦或更小)时，被维持在等离子体激发区域112中的含氩等离子体可产生较可流动的氧化硅层，并且当等离子体功率从约1000瓦或更大(例如约1000、1100、1200、1300、1400、1500、1600、1700瓦或更大)被增加时，被维持在等离子体激发区域112中的含氩等离子体可产生较共形的层。当等离子体功率从低增加到高，从可流动到共形的沉积膜的转变可相对平顺且连续，或者所述转变可经过相对分离的阀值而进展。可调整等离子体功率(单独地调整，或除了其他沉积参数以外而调整)，以选择沉积膜的共形与可流动性质之间的平衡。
处理系统可再进一步包括底座150，底座150可运作以支撑且移动基板(例如晶圆基板)。底座150与喷头104之间的距离有助于界定气体反应区域130。底座在处理腔室100内可垂直地或轴向地调整，以增加或减少气体反应区域130且藉由将晶圆基板相对于被通过喷头104的气体重新设置而进行晶圆基板的沉积或蚀刻。底座150可具有热交换通道，热交换流体流动通过所述热交换通道以控制晶圆基板的温度。热交换流体的循环容许基板温度能被维持在相对低的温度(例如约-20℃到约90℃)。示例性热交换流体包括乙二醇与水。
底座150还可配置成具有加热元件(诸如电阻式加热元件)以将基板维持在加热温度(例如约90℃到约1100℃)。示例性加热元件可包括被嵌设在基板支撑盘中的单回路加热器元件，所述单回路加热器元件以平行同心圆的形式形成两个或更多个完全匝。加热器元件的外部可走向为邻近着支撑盘的周边，而内部可走向为在具有较小半径的同心圆的路径上。到加热器元件的配线可通过底座的杆。
图3显示通过处理系统的一对气体混合物的气体流动路径的简化示意图，其中所述处理系统包括离子抑制件板与喷头两者。在方块305，第一气体(诸如等离子体产生气体混合物)经由气体入口被供应到处理腔室。第一气体可包括以下气体的一个或多个气体：CF4、NH3、NF3、Ar、He、H2O、H2、O2等。在方块310，在处理腔室内，第一气体可通过等离子体放电被激发而形成一个或多个等离子体流出物。或者(或除了原位等离子体产生以外)，耦接到处理腔室的远端等离子体系统(RPS)可用以产生异位等离子体(ex-situ plasma)，异位等离子体的等离子体激发产物被引进到处理腔室内。RPS等离子体激发产物可包括被离子充电的等离子体物种及中性和自由基物种。
无论等离子体流出物是由原位等离子体单元、RPS单元或上述两者产生，在方块315，所述等离子体流出物可通过处理腔室中的离子抑制件。当被等离子体引发的第一气体行进到处理腔室中的气体反应区域时，所述离子抑制件可阻挡和/或控制离子物种的通过，同时容许自由基和/或中性物种的通过。在方块320，第二气体可被引进到处理腔室内。如上所述，第二气体的内容物取决于所执行的工艺。例如，第二气体可包括用于沉积工艺的沉积化合物(例如含硅化合物)及用于蚀刻工艺的蚀刻剂。可避免第一与第二气体之间的接触和反应，直到这些气体抵达处理腔室的气体反应区域。
避免第一与第二气体在气体反应区域之前起交互作用的一种方式是使所述第一与第二气体流动通过双区域喷头(dual-zone showerhead,DZSH)中的不同通道。方块330显示被引发的第一气体与第二气体通过DZSH33，DZSH33具有第一多个通道，第一多个通道容许被引发的第一气体能通过喷头而不会和通过第二多个通道的第二气体起交互作用。在方块335，在离开DZSH之后，第一与第二气体可在处理腔室的气体反应区域中混合在一起。取决于所执行的工艺，结合的气体可反应以在基板的暴露表面上沉积材料、从基板蚀刻材料或上述两者。
现在参照图4，图4显示处理系统400的简化剖视图，其中所述处理系统400具有还作为离子抑制元件的喷头428。在所显示的配置中，用于等离子体产生428的第一气体源402流体地耦接到可选的RPS单元404，其中第一等离子体可在RPS单元404处被产生，并且等离子体流出物可在RPS单元404处经由气体入口408被传送到处理腔室406内。在处理腔室406内，气体可通过气体分布板412中的通孔410到被界定在板412与喷头428之间的气体区域414内。在一些实施例中，所述区域414可以是等离子体激发/引发区域，其中气体分布板412与喷头428作为第一与第二电极以进一步激发气体和/或产生第一等离子体。气体分布板412中的孔洞410可依孔洞410的尺寸与几何形态被建构成将回流等离子体予以停止。板412与喷头428可和RF功率产生器422耦接，RF功率产生器422供应电荷到板412与喷头428以激发气体和/或产生等离子体。在一个实施例中，喷头428被接地，而电荷被施加到板412。
气体区域414中的激发气体或引发气体可通过喷头428到邻近基板418的气体反应区域416内，以从基板的表面蚀刻材料和/或沉积材料在基板的表面上。喷头428可以是DZSH，DZSH容许激发气体能从气体区域414通过到气体反应区域416内，同时还容许第二气体(即前驱物气体/混合物)能从外部源(未示出)经由第二气体入口426流动到气体反应区域416内。DZSH可避免引发/激发气体和第二气体混合，直到气体流动到气体反应区域416内。
激发气体可流动通过DZSH中的多个孔洞424，所述孔洞424可依孔洞424之尺寸与几何形态被建构成控制或避免等离子体(即被离子充电的物种)的通过，同时容许引发/激发气体(即反应性自由基或未被充电的中性物种)的通过。图7A提供可被用在DZSH中的孔洞配置的示例性实施例。除了孔洞424以外，DZSH可包括多个通道426，第二气体流动通过所述多个通道426。第二气体(前驱物气体)可经由一个或多个穿孔(未示出)离开喷头428，所述穿孔设置成邻近所述孔洞424。DZSH可作为第二气体输送系统与离子抑制元件两者。
如上所述，混合气体可沉积材料在基板418的表面上和/或从基板418的表面蚀刻材料，其中所述基板418可设置在盘420上。盘420可在处理腔室406内垂直地移动。基板418在处理腔室406内的处理可能受到孔洞424的配置、气体区域414内的压力和/或基板418在处理腔室内的位置影响。进一步，孔洞424的配置和/或气体区域414内的压力可控制被容许通过到气体激发区域416内的离子物种(等离子体)的浓度。除了改变蚀刻选择性以外，气体混合物的浓度可改变被沉积的电介质材料的共形性和可流动性之间的平衡。
现在参照图5，图5显示另一处理系统500的简化剖视图，其中所述另一处理系统500具有作为离子抑制元件的板512(即离子抑制件板)。在所显示的配置中，第一气体源502流体地耦接到RPS单元504，其中第一等离子体可在RPS单元504处被产生，并且等离子体流出物可在RPS单元504处经由气体入口508被传送到处理腔室506内。等离子体流出物可被传送到被界定在离子抑制件板512与气体入口508之间的气体区域514。在气体区域514内，气体可通过离子抑制件512中的通孔510到被界定在离子抑制件512与基板518之间的气体反应/引发区域516内。基板518可如上所述被支撑在盘520上，以致基板可在处理腔室506内移动。
同样如上所述，所述孔洞510可依孔洞510的尺寸和/或几何形态被建构成使得可避免和/或控制被离子充电的物种(即等离子体)的通过，同时容许未被充电的中性或自由基物种(即引发气体)的通过。可藉由改变在气体区域514内的等离子体的压力来控制离子物种的通过。可藉由控制被输送通过气体入口508的气体的量来控制气体区域514中的压力。前驱物气体(即第二气体)可在一个或多个第二气体入口522处被引进到处理腔室506内，其中所述第二气体入口522垂直地设置在离子抑制件512下方或设置成平行于离子抑制件512。第二气体入口522可在处理腔室506壁中包括一个或多个穿孔、管等(未示出)且可进一步包括一个或多个气体分布通道(未示出)以将前驱物气体输送到所述穿孔、管等。在一个实施例中，离子抑制件512包括一个或多个第二气体入口，前驱物气体流动通过所述第二气体入口。离子抑制件512的第二气体入口可将前驱物气体输送到气体反应区域516内。在这样的实施例中，离子抑制件512如上所述作用成离子抑制件与双区域喷头两者。通过孔洞510的引发气体及被引进到处理腔室506中的前驱物气体可在气体反应区域516中被混合以用于蚀刻和/或沉积工艺。
已经描述了处理腔室的示例性实施例，现在将焦点转向离子抑制件的示例性实施例，诸如离子抑制件板412和512及喷头428。
示例性离子抑制件
图6A显示根据本发明的实施例的离子抑制元件600(离子抑制件)的简化透视图。离子抑制元件600可对应于图4和/或图5的离子抑制件板。所述透视图显示离子抑制元件或板600的顶部。离子抑制板600可具有大体上圆形的形状且可包括多个等离子体流出物管道602，其中各个管道602包括一个或多个通孔，所述通孔能容许等离子体流出物从第一区域(例如等离子体区域)到第二区域(例如气体反应区域或喷头)的通过。在一个实施例中，管道602的通孔可被配置成形成一个或多个圆形图案，尽管其他配置是可行的。如上所述，通孔可依通孔的几何形态或尺寸被建构成控制或避免离子物种的通过，同时容许未被充电的中性或自由基物种的通过。所述通孔可具有朝向离子抑制板600的顶表面的较大内径及朝向离子抑制板的底表面的较小内径。此外，所述通孔可具有大体上圆柱形、圆锥形或任何上述组合的形状。通孔的配置的示例性实施例被提供在图7A-B中。
所述多个管道可实质上均匀地被分布在离子抑制板600的表面上，这可提供均匀的中性或自由基物种通过离子抑制板到第二区域内的通过。在一些实施例(诸如图5的实施例)中，处理腔室可仅包括离子抑制板600，而在其他实施例中，处理腔室可包括离子抑制板600与喷头(诸如图6B的喷头)两者，或处理腔室可包括作为双区域喷头和离子抑制板两者的单一板。
图6B显示根据本发明的实施例的喷头620的简化仰视图。喷头620可对应于图4所示的喷头。如上所述，喷头620可垂直地设置成邻近气体反应区域并且位于气体反应区域上方。相似于离子抑制板600，喷头620可具有大体上圆形的形状且可包括多个第一孔洞622与多个第二孔洞624。所述多个第一孔洞622可容许等离子体流出物通过喷头620到气体反应区域内，而所述多个第二孔洞624可容许前驱物气体(诸如硅前驱物)、蚀刻剂等通过到气体反应区域内。
所述多个第一孔洞622可以是从喷头620的顶表面延伸通过喷头的通孔。在一个实施例中，所述多个第一孔洞622的每一个可具有朝向喷头620的顶表面的较小内径(ID)及朝向底表面的较大ID。此外，所述多个第一孔洞622的底部边缘可被去角(chamfer)626，以有助于当等离子体流出物离开喷头时能均匀地分布等离子体流出物在气体反应区域中且藉此促进等离子体流出物和前驱物气体的均匀混合。所述第一孔洞622的较小ID可介于约0.5mm与约20mm之间。在一个实施例中，较小ID可介于约1mm与6mm之间。所述第一孔洞622的剖面形状可以是大体上圆柱形、圆锥形或任何上述的组合。此外，当处理腔室中使用离子抑制元件600与喷头620两者时，所述第一孔洞622可和所述管道602的所述通孔同心地对准。同心对准可促进处理腔室中引发气体通过离子抑制元件600与喷头620两者的通过。
在另一实施例中，所述多个第一孔洞622可以是从喷头620的顶表面延伸通过喷头的通孔，其中各个第一孔洞622具有朝向喷头的顶表面的较大ID及朝向喷头的底表面的较小ID。此外，所述第一孔洞622可包括在较大与较小ID之间过渡的锥状化区域。这样的配置可避免或调节等离子体通过孔洞的通过，同时容许引发气体的通过。这样的实施例可被用来取代离子抑制元件600，或添加到离子抑制元件600。这样的通孔的示例性实施例被提供在图7A中。
所述多个第一孔洞622的数量可介于约60个与约2000个之间。所述多个第一孔洞622也可具有各种形状，但大体上是圆形。在处理腔室包括离子抑制板600与喷头620两者的实施例中，所述多个第一孔洞622可和所述管道602实质上对准，以促进等离子体流出物通过离子抑制板与喷头的通过。
所述多个第二孔洞624可从喷头620的底表面部分地延伸通过喷头。所述多个第二孔洞可耦接到或连接到多个通道(未示出)，所述多个通道将前驱物气体(例如沉积化合物、蚀刻剂等)从外部气体源(未示出)输送到所述第二孔洞624。所述第二孔洞可包括在喷头620的底表面处的较小ID及在喷头的内部中的较大ID。所述第二孔洞624的数量在不同实施例中可介于约100个与约5000个之间或介于约500个与约2000个之间。所述第二孔洞的较小ID的直径(即孔洞在底表面处的直径)可介于约0.1mm与约2mm之间。所述第二孔洞624可具有大体上圆形的形状且可同样地具有圆柱形、圆锥形或任何上述组合的形状。所述第一与第二孔洞可皆均匀地被分布在喷头620的底表面上，以促进等离子体流出物与前驱物气体的均匀混合。
参照图7A，图7A显示通孔的示例性配置。所示出的通孔大体上包括朝向孔洞的上端的大内径(ID)区域及朝向孔洞的底端或下端的较小ID区域。较小ID可介于约0.2mm与约5mm之间。此外，孔洞的深宽比(即较小ID和孔洞长度对比)可以是约1到20。这样的配置可实质上阻挡和/或控制等离子体流出物的离子物种的通过，同时容许自由基或中性物种的通过。例如，改变深宽比可调节被容许通过通孔的等离子体的量。可藉由改变等离子体在位于通孔正上方的区域内的压力来进一步调节等离子体通过。
现在参照特定配置，通孔702可包括在孔洞的上端处的大ID区域704及在孔洞的下端处的小ID区域706，且具有介于大ID与小ID之间的阶梯化边缘。通孔710可包括在上端处的大ID区域712及在孔洞的下端处的大ID区域716，且具有介于大ID区域712与大ID区域716之间的小ID区域714。大与小ID区域之间的过渡可被阶梯化或被钝化，以提供所述区域之间的急剧过渡。
通孔720可包括在孔洞的上端处的大ID区域722及在孔洞的下端处的小ID区域726，而具有在大与小ID区域之间以角度θ过渡的锥状化区域724。小ID区域726的高度728可取决于孔洞的总高度727、锥状化区域724的角度θ、大ID与小ID。在一个实施例中，锥状化区域724包括介于约15°与约30°之间且较佳为约22°的角度；总高度727介于约4mm与约8mm之间且较佳为约6.35mm；大ID介于约1mm与约4mm之间且较佳为约2.54mm；小ID介于约0.2mm与约1.2mm之间且较佳为约0.89mm，从而小ID区域726的高度728介于约1mm与约3mm之间且较佳为约2.1mm。
通孔730可包括在孔洞的上端处的第一ID区域732、同心地对准于第一ID区域732且垂直地设置于第一ID区域732下方的第二ID区域734与同心地对准于第二ID区域734且垂直地设置于第二ID区域734下方的第三ID区域736。第一ID区域732可包括大ID，第二ID区域734可包括小ID，且第三ID区域736可包括比第二ID区域734稍大的ID。第三ID区域736可延伸到孔洞的下端或可向外地被锥状化到出口ID737。第三ID区域736与出口ID737之间的的锥体能以角度θ3而锥状化，所述角度θ3可介于约15°与约30°之间且较佳为约22°。第二ID区域734可包括以角度θ1从第一ID区域732过渡的去角边缘，所述角度θ1可介于约110°与约140°之间。相似地，第二ID区域734可包括以角度θ2过渡成第三ID区域736的去角边缘，所述角度θ2也可介于约110°与约140°之间。在一个实施例中，第一ID区域732的大ID可介于约2.5mm与约7mm之间且较佳为约3.8mm；第二ID区域734的小ID可介于约0.2mm与约5mm之间且较佳为约0.4mm；第三ID区域736的稍大ID可介于约0.75mm与约2mm之间且较佳为约1.1mm；且出口ID可介于约2.5mm与约5mm之间且较佳为约3.8mm。
所述大ID区域与小ID区域之间的过渡(钝化、阶梯化、锥状化等)可实质上阻挡离子物种通过孔洞的通过，同时容许自由基或中性物种的通过。例如，现在参照图7B，图7B显示通孔720的放大图，所述通孔720包括介于大ID区域722与小ID区域726之间的过渡区域724。锥状化区域724可实质上避免等离子体725穿过通孔720。例如，当等离子体725穿过进入到通孔720内时，离子物种会藉由接触锥状化区域724的壁而停止(deactivate)或着壁(groundout)，藉此限制等离子体通过通孔的通过且将等离子体包括在通孔720上方的区域内。然而，自由基或中性物种可通过通孔720。因此，通孔720可过滤等离子体725，而避免或控制不希望的物种的通过。在示例性实施例中，通孔的小ID区域726包括1mm或更小的ID。为了维持显著的自由基和/或中性物种穿过通孔的浓度，可控制小ID区域的长度和/或锥状化角度。
除了避免等离子体的通过以外，在此所述的通孔可用以调节等离子体的通过，以致期望的等离子体位准能被容许通过通孔。调节等离子体流通过通孔的流动的步骤可包括以下步骤：增加在离子抑制件板上方的气体区域中的等离子体的压力，使得期望的等离子体比例能通过离子抑制件而不会停止或着壁。
现在参照图8，图8显示CCP单元800的简化图。更详细地说，所显示的CCP单元800包括顶板802与底板804，顶板802与底板804界定等离子体被包括于内的等离子体产生区域810。如上所述，等离子体可由RPS(未示出)产生且经由通孔806被输送到等离子体产生区域810。替代地或除此以外，可例如藉由利用顶板802与底板804作为耦接到功率产生单元(未示出)的第一与第二电极以在CCP单元800中产生等离子体。
顶板802可包括通孔806，所述通孔806容许工艺气体和/或等离子体能被输送到等离子体产生区域810内，同时避免等离子体通过顶板802的回流。通孔806可建构成相似于通孔730，而具有第一、第二和第三ID区域(分别是820、822和824)，且有去角边缘(828和829)介于邻近的区域之间，且锥状化区域826在第三ID区域824与出口ID之间过渡。当等离子体穿过进入到通孔806内时，介于第三ID区域824与出口ID之间的锥状化区域826和/或介于第二和第三ID区域(分别是822和824)之间的去角边缘可藉由将离子物种予以停止或着壁而避免等离子体的回流。
相似地，底板804可包括通孔808，通孔808容许自由基或中性物种能通过通孔，同时避免或控制离子物种的通过。通孔808可建构成相似于通孔720，而具有大ID区域830、小ID区域832与锥状化区域834，其中所述锥状化区域834在大ID区域830与小ID区域832之间过渡。锥状化区域834可如上所解释地藉由将离子物种予以停止或着壁而避免等离子体通过通孔808的流动，同时容许自由基或中性物种能通过通孔。
为了进一步避免等离子体通过通孔806和/或808的通过，顶板802和/或底板804可接收电荷，以将等离子体予以电偏压且将等离子体包括在等离子体产生区域810内和/或调整通过底板的引发气体中的离子浓度。通过在CCP单元800中使用顶板802与底板804，等离子体可实质上被产生和/或被维持在等离子体产生区域810中，同时自由基与中性物种可被输送到气体反应区域而和一个或多个前驱物气体混合，以从基板表面蚀刻材料或沉积材料在基板表面上。
示例性工艺
根据本发明的一些实施例，如上所述的离子抑制件可用以提供用于蚀刻或沉积工艺的自由基和/或中性物种。例如，在一个实施例中，离子抑制件用以提供氟自由基而选择性地蚀刻含金属膜。通过使用氟自由基，可获得高达约80:1或更大的含金属膜对氧化硅膜的蚀刻速率选择性。此外，可获得高达约30:1或更大的含金属膜对氮化硅膜的蚀刻速率选择性。这样的工艺的一项应用是移除三维器件结构中的含金属膜。可根据本发明的实施例而被蚀刻的含金属膜包括例如钨膜、铪膜、锆膜、钽膜、钛膜等，以及这些膜的硅酸盐和氧化物。
离子抑制件可用以提供具有比离子更高浓度的自由基的反应性气体。由于等离子体中大部分的被充电的微粒被离子抑制件过滤或移除，基板在蚀刻工艺期间通常不被偏压。相较于包括溅射和轰击的传统等离子体蚀刻工艺，这样的使用自由基与其他中性物种的工艺可减少等离子体损伤。本发明的实施例相较于传统湿式蚀刻工艺也是有利的，其中对于传统湿式蚀刻工艺而言，液体的表面张力会造成小特征结构的弯曲和剥落。
图9是示出根据本发明实施例的从包括含金属层与氧化硅层和/或氮化硅层的基板而选择性地蚀刻含金属膜的示例性方法的简化流程图。此方法包括以下步骤：使含氟气体流动到基板处理腔室的等离子体产生区域内(902)。含氟气体可包括HF、F2、NF3、CF4、CHF3、C2F6、C3F6、BrF3、ClF3、SF6等。其他实施例可包括其他含卤素气体，诸如Cl2、HBr、SiCl4等，以取代含氟气体或添加到含氟气体。在图9的示例性方法中，含氟气体还可包括一个或多个氧源，诸如O2、O3、N2O、NO等。使用氧可增加含金属层的蚀刻速率，而对氧化硅和/或氮化硅的蚀刻速率具有最小的冲击。含氟气体还可包括一个或多个惰性气体，诸如H2、He、N2、Ar等。惰性气体可用以改善等离子体稳定性。不同气体的流速与比例可用以控制蚀刻速率与蚀刻选择性。在实施例中，含氟气体包括流速介于约5sccm与500sccm之间的NF3、流速介于约0sccm与5000sccm之间的O2及流速介于约0sccm与5000sccm之间的He。本领域技术人员可了解的是可使用其他气体和/或流量，取决于许多因素(包括处理腔室配置、基板尺寸、被蚀刻的特征结构的几何形态与布局等)。
此方法还包括以下步骤：施加能量到含氟气体以在等离子体产生区域中产生等离子体(904)。如同本领域技术人员所能了解的，等离子体可包括许多被充电的与中性的物种(包括自由基与离子)。可使用已知的技术(例如RF电容耦合、感应式耦合等)来产生等离子体。在实施例中，使用在介于约15W与5000W之间的源功率与介于约0.2Torr与30Torr之间的压力下的CCP单元来施加能量。CCP单元可设置在处理腔室的气体反应区域的远端。例如，可藉由离子抑制件使CCP单元与等离子体产生区域和气体反应区域分离。
此方法还包括以下步骤：过滤等离子体，以提供具有比氟离子更高浓度的氟自由基的反应性气体(906)。可使用设置在基板处理腔室的等离子体产生区域与气体反应区域之间的离子抑制件来过滤等离子体。离子抑制件可包括多个通道，所述通道容许氟自由基与中性物种在等离子体产生区域与气体反应区域之间的通过。离子抑制件可配置成移除从等离子体产生区域通过的离子的一些或全部。例如，在实施例中，可移除主要部分的离子，以致反应性气体实质上不含有离子。
此方法还包括以下步骤：使反应性气体流动到基板处理腔室的气体反应区域内(908)。在实施例中，离子抑制件可配置成作为喷头，并且离开离子抑制件的反应性气体可流动到邻近基板的气体反应区域内。或者，离开离子抑制件的反应性气体可流动通过喷头或另一气体分布器且进入到气体反应区域内。
此方法还包括以下步骤：使基板暴露于基板处理腔室的气体反应区域中的反应性气体(910)。在实施例中，基板的温度可介于约-10℃与200℃之间，并且基板处理腔室中的压力可介于约0.2Torr与30Torr之间。本领域技术人员可了解的是可使用其他温度和/或压力，取决于许多因素，如上所解释。相较于反应性气体蚀刻氧化硅层和/或氮化硅层而言，反应气体以更高的蚀刻速率来蚀刻含金属层。
图10是示出根据本发明实施例而提供比介电膜(诸如氧化硅膜和/或氮化硅膜)蚀刻速率更高的含金属膜蚀刻速率的示例性蚀刻工艺的简化流程图。所述工艺包括以下步骤：由含氟气体产生等离子体，所述等离子体包括氟自由基与氟离子(1002)。如上所解释，可在和气体反应区域分离的基板处理腔室的等离子体产生区域中形成等离子体。所述工艺还包括以下步骤：从等离子体移除一部分的氟离子，以提供具有比氟离子更高浓度的氟自由基的反应性气体(1004)。可使用离子抑制件来移除所述部分的氟离子。所述工艺还包括以下步骤：使包括含金属层与介电层的基板暴露于反应性气体，其中相较于反应性气体蚀刻氧化硅层和/或氮化硅层而言，反应性气体以更高的蚀刻速率来蚀刻含金属层(1006)。
应了解，图9-10中示出的示例性工艺不被局限为和图1-5中示出的处理腔室及图6A、6B、7A、7B和图8-9中示出的离子抑制元件一并使用。相反，可使用其他硬件配置来执行根据本发明的实施例的工艺。此外，图9-10中示出的所述详细步骤是根据本发明的实施例提供特定方法。根据替代的实施例，可由系统软件来持续地重复上述的步骤，并且可执行其他步骤顺序。例如，可以不同的次序来执行上述的步骤。此外，图9-10中示出的个别步骤可包括多个子步骤，所述子步骤能依对个别步骤为适当的各种顺序而被执行。此外，取决于特定应用，可增加或移除额外的步骤。本领域技术人员可了解许多变化、变更与替代。
应注意，本说明书通篇所讨论的方法与设备仅被提供作为示例。各种实施例可依适当性而省略、取代或增加各种步骤或部件。例如，应了解，涉及特定实施例而描述的特征可被结合在各种其他实施例中。此外，可由硬件、软件、固件、中间件、微代码、硬件描述语言或任何上述组合来实施实施例。当被实施在软件、固件、中间件或微代码中时，用以执行必要任务的程序代码或代码片段可被储存在计算机可读媒介(诸如储存媒介)中。处理器可适于执行必要任务。用语“计算机可读媒介”包括但不限于便携式或固定式储存装置、光学储存装置、SIM卡、其他智能卡、以及能够储存、包含或承载指令或数据的各种其他媒介。

Claims (13)

1.一种从包括含金属层与氧化硅层的基板选择性地蚀刻含金属膜的方法，所述方法包括以下步骤：
使含氟气体流动到基板处理腔室的等离子体产生区域内；
施加能量到所述含氟气体，以在所述等离子体产生区域中产生等离子体，所述等离子体包括氟自由基与氟离子；
过滤所述等离子体，以提供具有比氟离子更高浓度的氟自由基的反应性气体，其中使用设置在所述基板处理腔室的所述等离子体产生区域与气体反应区域之间的离子抑制件来过滤所述等离子体，所述离子抑制件包括多个通道，所述多个通道容许氟自由基在所述等离子体产生区域与所述气体反应区域之间的通过，且所述离子抑制件与RF功率产生器耦接；
通过喷头使所述反应性气体流动到所述基板处理腔室的所述气体反应区域内，其中所述喷头与RF功率产生器耦接；及
使所述基板暴露于所述基板处理腔室的所述气体反应区域中的所述反应性气体，其中相较于所述反应性气体蚀刻所述氧化硅层而言，所述反应性气体以更高的蚀刻速率来蚀刻所述含金属层。
2.如权利要求1所述的方法，其中所述含氟气体包括NF3。
3.如权利要求1所述的方法，其中所述含金属层包括钨。
4.如权利要求1所述的方法，其中所述含金属层包括铪。
5.如权利要求1所述的方法，其中所述反应性气体不含有氟离子。
6.一种提供比介电膜蚀刻速率更高的含金属膜蚀刻速率的蚀刻工艺，所述工艺包括以下步骤：
由含氟气体产生等离子体，所述等离子体包括氟自由基与氟离子；
从所述等离子体移除一部分的所述氟离子，以提供具有比氟离子更高浓度的氟自由基的反应性气体，其中使用离子抑制件从所述等离子体移除所述部分的所述氟离子，所述离子抑制件包括多个通道，所述多个通道容许氟自由基的通过与氟离子的抑制，且所述离子抑制件与RF功率产生器耦接；
通过喷头使所述反应性气体流动到基板处理腔室的气体反应区域内，其中所述喷头与RF功率产生器耦接；以及
使包括含金属层与介电层的基板暴露于所述反应性气体，其中相较于所述反应性气体蚀刻所述介电层而言，所述反应性气体以更高的蚀刻速率来蚀刻所述含金属层。
7.如权利要求6所述的蚀刻工艺，其中所述含氟气体包括NF3。
8.如权利要求6所述的蚀刻工艺，其中所述含氟气体包括He或Ar的至少一者。
9.如权利要求6所述的蚀刻工艺，其中所述含金属层包括钨。
10.如权利要求6所述的蚀刻工艺，其中所述含金属层包括铪。
11.如权利要求6所述的蚀刻工艺，其中所述反应性气体不含有氟离子。
12.如权利要求6所述的蚀刻工艺，其中所述介电层包括氧化硅。
13.如权利要求6所述的蚀刻工艺，其中所述介电层包括氮化硅。
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