JP2014508423A - 金属および金属酸化物膜のエッチング方法 - Google Patents
金属および金属酸化物膜のエッチング方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 76
- 238000005530 etching Methods 0.000 title claims abstract description 43
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 37
- 239000002184 metal Substances 0.000 title claims abstract description 37
- 229910044991 metal oxide Inorganic materials 0.000 title 1
- 150000004706 metal oxides Chemical class 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 88
- 238000006243 chemical reaction Methods 0.000 claims abstract description 51
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 45
- 239000011737 fluorine Substances 0.000 claims abstract description 44
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 26
- -1 fluorine ions Chemical class 0.000 claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 17
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims abstract description 7
- 150000002500 ions Chemical class 0.000 claims description 121
- 230000008569 process Effects 0.000 claims description 44
- 230000001629 suppression Effects 0.000 claims description 36
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 213
- 210000002381 plasma Anatomy 0.000 description 199
- 230000005284 excitation Effects 0.000 description 27
- 239000000463 material Substances 0.000 description 26
- 150000003254 radicals Chemical class 0.000 description 23
- 239000000203 mixture Substances 0.000 description 21
- 230000007935 neutral effect Effects 0.000 description 20
- 239000002243 precursor Substances 0.000 description 20
- 238000000151 deposition Methods 0.000 description 13
- 230000006870 function Effects 0.000 description 13
- 230000008021 deposition Effects 0.000 description 12
- 230000007704 transition Effects 0.000 description 11
- 230000004913 activation Effects 0.000 description 9
- 238000005137 deposition process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000012530 fluid Substances 0.000 description 7
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000011148 porous material Substances 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 101100441092 Danio rerio crlf3 gene Proteins 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical class O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- RTKIYFITIVXBLE-QEQCGCAPSA-N trichostatin A Chemical compound ONC(=O)/C=C/C(/C)=C/[C@@H](C)C(=O)C1=CC=C(N(C)C)C=C1 RTKIYFITIVXBLE-QEQCGCAPSA-N 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
- H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
Abstract
金属含有層および酸化ケイ素層を含む基板から金属含有膜を選択的にエッチングする方法は、基板処理チャンバのプラズマ発生領域内にフッ素含有ガスを流入させること、およびフッ素含有ガスにエネルギーを印加して、プラズマ発生領域内でプラズマを発生させることを含む。このプラズマは、フッ素ラジカルおよびフッ素イオンを含む。この方法はさらに、このプラズマをフィルタリングして、フッ素イオン濃度よりも高いフッ素ラジカル濃度を有する反応性ガスを提供すること、およびこの反応性ガスを、基板処理チャンバのガス反応領域内に流入させることを含む。この方法はさらに、基板処理チャンバのガス反応領域内で基板を反応性ガスにさらすことを含む。この反応性ガスは、この反応性ガスが酸化ケイ素層をエッチングするよりも速いエッチング速度で金属含有層をエッチングする。
Description
本出願は、米国特許法第１１９条（ｅ）に基づき、２０１１年３月１４日に出願された米国特許仮出願第６１／４５２，５２２号の利益を主張するものであり、この出願の内容は、あらゆる目的のために、その全体が参照によって本明細書に組み込まれている。
本出願は、２０１１年４月１８日に出願した米国特許非仮出願第１３／０８８，９３０号、２０１１年１０月３日に出願した米国特許非仮出願第１３／２５１，６６３号、および同時に出願した米国特許非仮出願第 号（弁理士整理番号Ａ１５６００／Ｔ１０３０１０、顧客参照番号０１５６００ＵＳＡ／ＤＳＭ／ＰＭＤ）にも関連し、これらのそれぞれの出願の内容は、あらゆる目的のために、その全体が参照によって本明細書に組み込まれている。
集積回路は、入り組んだパターンを有する材料層を基板表面に形成するプロセスによって可能になる。パターンを有する材料を基板表面に形成するためには、露出した材料を除去する制御された方法が必要である。フォトレジストのパターンをその下の層に転写すること、層を薄くすること、または基板表面に既に存在するフィーチャの横方向の寸法を増大させることを含むさまざまな目的に、化学エッチングが使用されている。１つの材料を別の材料よりも速くエッチングするエッチングプロセスがしばしば望ましい。このようなエッチングプロセスは、第１の材料に対して選択的であると言われる。材料、回路およびプロセスの多様性の結果、さまざまな材料に対する選択性を有するエッチングプロセスが開発された。
半導体集積回路を製造するプラズマ堆積プロセスおよびプラズマエッチングプロセスは、数十年にわたり広範囲に使用されている。これらのプロセスは通常、処理チャンバ内でガスをイオン化するのに十分なパワーの電場にさらされたガスからプラズマを形成することを含む。これらのプラズマを形成するのに必要な温度は、同じガスを熱的にイオン化するのに必要な温度よりもはるかに低い。したがって、プラズマ発生プロセスを使用して、そのガスを単純に加熱することによって可能な温度よりもかなり低いチャンバ処理温度で反応性のラジカル種およびイオン種を生み出すことができる。これにより、プラズマは、基板温度を、基板表面の材料を融解し、分解しまたは他の方法で傷つけるしきい温度よりも上昇させることなく、材料を堆積させ、かつ／または基板表面から材料をエッチングすることができる。
例示的なプラズマ堆積プロセスは、基板ウエハの露出した表面に酸化ケイ素などの誘電体材料を堆積させるプラズマ化学気相堆積（ＰＥＣＶＤ）を含む。従来のＰＥＣＶＤは、処理チャンバ内でガスおよび／または堆積前駆体を混合し、それらのガスからプラズマに点火して、材料と反応し基板上に材料を堆積させる反応性の種を発生させることを含む。反応生成物の効率的な堆積を容易にするため、プラズマは通常、基板の露出した表面の近くに置かれる。
同様に、プラズマエッチングプロセスは、材料と化学的に反応しかつ／または基板から材料を物理的にスパッタリングするプラズマ活性化されたエッチング種に、基板の選択された部分をさらすことを含む。エッチング剤ガス、プラズマ励起エネルギー、基板と荷電プラズマ種との間の電気バイアスなどのパラメータを調整することで、プラズマエッチングする材料の除去速度、選択性および方向を制御することができる。高密度プラズマ化学気相堆積（ＨＤＰ−ＣＶＤ）などのいくつかのプラズマ技法は、同時プラズマエッチング／堆積に依存して基板の表面に膜を堆積させる。
プラズマ環境は一般に、高温堆積環境ほどには基板に対して破壊的ではないが、それでもプラズマ環境には製造上の課題がある。浅いトレンチおよびギャップをオーバーエッチングしてしまう高エネルギープラズマに関しては、エッチング精度が問題となりうる。プラズマ中の高エネルギー種、特にイオン化した種は、堆積材料内において、材料の性能に不利な影響を及ぼす不必要な反応を生み出すことがある。したがって、製造中に基板ウエハと接触するプラズマ成分のより精密な制御を提供するシステムおよび方法が求められている。
プラズマおよび／またはその流出物（ｅｆｆｌｕｅｎｔ）にさらされた基板ウエハの表面とプラズマとの間の環境の制御を向上させるシステムおよび方法が記載される。制御の向上は、基板に到達するイオン性荷電種（ｉｏｎｉｃａｌｌｙ−ｃｈａｒｇｅｄ ｓｐｅｃｉｅｓ）の数を低減または排除する、プラズマと基板の間に配置されたイオン抑制要素によって少なくとも部分的に実現することができる。基板表面に到達するイオン種の濃度を調整することによって、基板表面でのプラズマ支援エッチングおよび／またはプラズマ支援堆積中のエッチング速度、エッチング選択性および堆積ケミストリなどのパラメータをより精密に制御することができる。
一実施形態では、金属含有層および酸化ケイ素層を含む基板から金属含有膜を選択的にエッチングする方法が提供される。この方法は、基板処理チャンバのプラズマ発生領域内にフッ素含有ガスを流入させること、およびフッ素含有ガスにエネルギーを印加して、プラズマ発生領域内でプラズマを発生させることを含む。プラズマは、フッ素ラジカルおよびフッ素イオンを含む。この方法はさらに、このプラズマをフィルタリングして、フッ素イオン濃度よりも高いフッ素ラジカル濃度を有する反応性ガスを提供すること、およびこの反応性ガスを、基板処理チャンバのガス反応領域内に流入させることを含む。この方法はさらに、基板処理チャンバのガス反応領域内で基板を反応性ガスにさらすことを含む。この反応性ガスは、この反応性ガスが酸化ケイ素層をエッチングするよりも速いエッチング速度で金属含有層をエッチングする。
他の実施形態では、誘電体膜のエッチング速度よりも速い金属含有膜のエッチング速度を提供するエッチングプロセスが提供される。このプロセスは、フッ素含有ガスからプラズマを発生させることを含む。プラズマは、フッ素ラジカルおよびフッ素イオンを含む。このプロセスはさらに、このプラズマからフッ素イオンの一部を除去して、フッ素イオン濃度よりも高いフッ素ラジカル濃度を有する反応性ガスを提供すること、ならびに金属含有層および誘電体層を含む基板を反応性ガスにさらすことを含む。この反応性ガスは、この反応性ガスが誘電体層をエッチングするよりも速いエッチング速度で金属含有層をエッチングする。
追加の実施形態および特徴のうち、一部は、以下の説明に記載されており、当業者が本明細書を読むことによって明白となり、または本発明を実施することによって知ることができる。本発明のそれらの特徴および利点は、本明細書に記載された手段、組合せおよび方法によって実現し、達成することができる。
本明細書の残りの部分および図面を参照することによって、本発明の性質および利点をさらに理解することができる。これらのいくつかの図面の全体を通じて、同様の構成要素を指すために同様の参照符号が使用される。ある場合には、参照符号に副標識が付けられ、この副標識は、ハイフンの後に付けられて、同種の複数の構成要素のうちの１つの構成要素を表す。存在する副標識を指定せずに参照符号に言及したときには、そのような同種の複数の構成要素の全てを指すことが意図されている。
半導体処理チャンバ内においてプラズマを発生させ制御するシステムおよび方法について説明する。このプラズマは、処理チャンバ内で発生させ、もしくは処理チャンバ外の遠隔プラズマユニットで発生させ、またはその両方において発生させることができる。処理チャンバ内では、プラズマと基板ウエハの間に配置されたイオン抑制要素の助けを借りて、プラズマを閉じ込め、プラズマを基板ウエハから分離する。いくつかの例では、このイオン抑制要素は、プラズマ発生ユニット（例えば電極）、ガス／前駆体分配システム（例えばシャワーヘッド）および／または処理システムの他の構成要素の部分としても機能する。追加の例では、このイオン抑制要素は主に、プラズマ発生領域と、基板ウエハの露出した表面の材料をエッチングしかつ／または基板ウエハの露出した表面に材料を堆積させるガス反応領域との間の仕切りを画定するように機能する。
このイオン抑制要素は、プラズマ発生領域から基板へ移動するイオン性荷電種を低減または排除するように機能する。帯電していない中性種およびラジカル種は、イオン抑制器の開口を通り抜けて基板のところで反応することができる。基板の周囲の反応領域からイオン性荷電種を完全に排除することが必ずしも所望の目的でないことに留意すべきである。エッチングプロセスおよび／または堆積プロセスを実行するため、多くの場合に、イオン種が基板に到達することが必要である。これらの場合には、イオン抑制器は、反応領域内のイオン種の濃度を、そのプロセスを支援するレベルに制御するのを助ける。
例示的な処理システム構成
例示的な処理システム構成は、基板に到達するプラズマ励起した種（以後、プラズマ励起種）のタイプおよび量を制御するために処理チャンバ内に配置されたイオン抑制器を含む。いくつかの実施形態では、このイオン抑制器ユニットは、プラズマ発生ユニットの電極としても機能する多孔板である。追加の実施形態では、このイオン抑制器は、基板に接した反応領域にガスおよび励起種を分配するシャワーヘッドである。他の実施形態では、イオンの抑制は、多孔板イオン抑制器およびシャワーヘッドによって実現され、プラズマ励起種は、多孔板イオン抑制器とシャワーヘッドの両方を通り抜けて反応領域に到達する。
例示的な処理システム構成は、基板に到達するプラズマ励起した種（以後、プラズマ励起種）のタイプおよび量を制御するために処理チャンバ内に配置されたイオン抑制器を含む。いくつかの実施形態では、このイオン抑制器ユニットは、プラズマ発生ユニットの電極としても機能する多孔板である。追加の実施形態では、このイオン抑制器は、基板に接した反応領域にガスおよび励起種を分配するシャワーヘッドである。他の実施形態では、イオンの抑制は、多孔板イオン抑制器およびシャワーヘッドによって実現され、プラズマ励起種は、多孔板イオン抑制器とシャワーヘッドの両方を通り抜けて反応領域に到達する。
図１および図２はそれぞれ、容量結合プラズマ（ＣＣＰ）ユニット１０２の一部としてのイオン抑制器１１０と、イオン抑制にも寄与することができるシャワーヘッド１０４の両方を含む処理システムの略断面図および略斜視図を示す。場合により、この処理システムはさらに、処理チャンバ１００の外側に配置された流体供給システム１１４などの構成要素を含むことができる。処理チャンバ１００は、周囲の圧力とは異なる内圧を維持することができる。例えば、処理チャンバ内の圧力を約１ミリトル（ｍＴｏｒｒ）から約１００トルとすることができる。
ＣＣＰユニット１０２は、処理チャンバ１００内でプラズマを発生させるように機能することができる。ＣＣＰユニット１０２の構成要素は、蓋またはホット電極（ｈｏｔ ｅｌｅｃｔｒｏｄｅ）１０６およびイオン抑制要素１１０（本明細書ではイオン抑制器とも呼ぶ）を含むことができる。いくつかの実施形態では、蓋１０６およびイオン抑制器１１０は導電性電極であり、これらの電極間のガスをイオン化してプラズマにするのに十分な強さの電場を発生させるために、これらの電極を互いに対して電気的にバイアスすることができる。電気絶縁体１０８は、蓋電極１０６とイオン抑制器電極１１０を分離して、プラズマが発生したときにこれらが短絡することを防ぐことができる。蓋１０６、絶縁体１０８およびイオン抑制器１１０のプラズマにさらされる表面は、ＣＣＰユニット１０２内のプラズマ励起領域１１２を画定することができる。
プラズマを発生させるガス（以後、プラズマ発生ガス）は、ガス供給システム１１４からガス入口１１６を通ってプラズマ励起領域１１２内へ移動することができる。このプラズマ発生ガスを使用して励起領域１１２内でプラズマに点火することができ、または、このプラズマ発生ガスは、既に形成されているプラズマを維持することができる。いくつかの実施形態では、プラズマ発生ガスは、入口１１６を通って下流に移動してＣＣＰユニット１０２に達する前に、処理チャンバ１００の外側に配置された遠隔プラズマシステム（図示せず）内で既に、少なくとも部分的にプラズマ励起種に変化している。このプラズマ励起種はプラズマ励起領域１１２に到達したときに、プラズマ励起種をＣＣＰユニット１０２内でさらに励起することができ、または追加の励起なしでプラズマ励起領域を通過させることもできる。いくつかの操作では、基板処理の順序および／または条件に応じて、ＣＣＰユニット１０２によって提供する追加の励起の程度を時間とともに変化させる。
このプラズマ発生ガスおよび／またはプラズマ励起種は、プラズマ励起領域１１２内へより均一に送達するための蓋１０６の複数の孔（図示せず）を通り抜けることができる。例示的な構成は、プラズマ発生ガス／プラズマ励起種が蓋１０６の孔を通ってプラズマ励起領域１１２内に流入するように、入口１１６が、蓋１０６によってプラズマ励起領域１１２から分離されたガス供給領域１２０内へ開いていることを含む。プラズマ励起領域１１２から、供給領域１２０、入口１１６および流体供給システム１１４へプラズマがあまり逆流しないように、構造特徴および動作特徴を選択することができる。構造特徴は、逆流しているプラズマを非活性化する蓋１０６の孔の寸法および断面幾何形状の選択を含むことができる。逆流しているプラズマの非活性化については図７Ａおよび図７Ｂを参照して後に説明する。動作特徴は、イオン抑制器１１０を通り抜けるプラズマの一方向の流れを維持する、ガス供給領域１２０とプラズマ励起領域１１２の間の圧力差を維持することを含むことができる。
前述のとおり、蓋１０６およびイオン抑制器１１０はそれぞれ、蓋１０６および／またはイオン抑制器１１０が電荷を受け取ることができるように、第１の電極および第２の電極として機能することができる。これらの構成では、蓋１０６もしくはイオン抑制器１１０またはその両方にパワー（例えばＲＦパワー）を供給することができる。例えば、蓋１０６にパワーを供給し、イオン抑制器１１０を接地することができる。この基板処理システムは、蓋１０６および／またはイオン抑制器１１０にパワーを供給するＲＦジェネレータ１４０を含むことができる。帯電した蓋１０６は、プラズマ励起領域１１２内のプラズマの均一な分布を促進にする（すなわち局在するプラズマを減らす）ことができる。プラズマ励起領域１１２内でのプラズマの形成を可能にするため、絶縁体１０８は、蓋１０６とイオン抑制器１１０とを電気的に絶縁することができる。絶縁体１０８はセラミック製とすることができ、電気火花の発生を防ぐために高い絶縁破壊電圧を有することができる。プラズマにさらされた表面を循環冷却剤（例えば水）によって冷却するため、ＣＣＰユニット１０２はさらに、１つまたは複数の冷却流体チャネルを含む冷却ユニット（図示せず）を含むことができる。
イオン抑制器１１０は、プラズマ励起領域１１２からのイオン性荷電種の移動を抑制し、同時に、帯電していない中性種またはラジカル種がイオン抑制器１１０を通り抜けて活性化されたガス（以後、活性化ガス）の送達領域１２４に入ることを許す複数の孔１２２を含むことができる。帯電していないこれらの中性種またはラジカル種は、より反応性の低いキャリアガスによって運ばれて孔１２２を通り抜ける反応性の高い種を含むことができる。前述のとおり、孔１２２を通り抜けるイオン種の移動を低減させることができ、場合によっては完全に抑制することができる。イオン抑制器１１０を通り抜けるイオン種の量を制御することによって、その下のウエハ基板と接触するガス混合物の制御が向上し、ガス混合物の制御が向上することによって、ガス混合物の堆積特性および／またはエッチング特性の制御が向上する。例えば、ガス混合物のイオン濃度を調整することによって、ガス混合物のエッチング選択性（例えばＳｉＮｘ：ＳｉＯｘエッチング比、金属：ＳｉＯｘエッチング比、金属：ＳｉＮｘエッチング比、ポリＳｉ：ＳｉＯｘエッチング比など）を大幅に変化させることができる。ガス混合物のイオン濃度を調整することによって、堆積する誘電体材料の共形性（ｃｏｎｆｏｒｍａｌ）と流動性（ｆｌｏｗａｂｌｅ）との平衡を変化させることもできる。
イオン抑制器１１０を通り抜ける活性化ガス（すなわちイオン種、ラジカル種および／または中性種）の通り抜けを制御するように、複数の孔１２２を構成することができる。例えば、イオン抑制器１１０を通り抜ける活性化ガス中のイオン性荷電種の流量が低下するように、孔のアスペクト比（すなわち孔の直径と長さの比）および／または孔の幾何形状を制御することができる。イオン抑制器１１０の孔は、プラズマ励起領域１１２に面するテーパの付いた部分と、シャワーヘッド１０４に面する円筒形部分とを含むことができる。この円筒形部分の形状および寸法を調整して、シャワーヘッド１０４に達するイオン種の流れを制御することができる。イオン抑制器を通り抜けるイオン種の流れを制御する追加の手段として、調整可能な電気バイアスをイオン抑制器１１０に与えることもできる。
シャワーヘッド１０４は、ＣＣＰユニット１０２のイオン抑制器１１０と、ペデスタル１５０上に装着されていることがある基板と接触するガス反応領域１３０（すなわちガス活性化領域）との間に配置される。ガスおよびプラズマ励起種は、イオン抑制器１１０を通り抜け、イオン抑制器１１０とシャワーヘッド１０４の間に画定された活性化ガス送達領域１２４に入ることができる。これらのガスおよびプラズマ励起種の一部はさらに、シャワーヘッド１０４を通り抜け、基板と接触するガス反応領域１３０に入ることができる。
このシャワーヘッドは、プラズマ励起種の通り抜けを許すチャネル１２６の第１のセットと、第２のガス／前駆体混合物をガス反応／活性化領域１３０内に送達するチャネルの第２のセットとを有する２重ゾーンシャワーヘッドとすることができる。これらの２つのチャネルセットは、ガス反応領域１３０に到達する前に、プラズマ励起種と第２のガス／前駆体混合物とが混合することを防ぐ。いくつかの実施形態では、プラズマ励起種の少なくとも一部が、その流れの方向を変えることなく孔１２２およびチャネル１２６を通り抜けることを可能にするため、イオン抑制器１１０の孔１２２のうちの１つまたは複数の孔が、シャワーヘッド１０４のチャネル１２６のうちの１つまたは複数のチャネルと整列する。追加の実施形態では、チャネルの第２のセットのガス反応領域１３０に面した開口の形状が環形であり、それらの環形の開口が、チャネル１２６の第１のセットの円形の開口を取り巻き、チャネル１２６の第１のセットの円形の開口と同心で整列する。
シャワーヘッド１０４のチャネルの第２のセットは、そのプロセスを実行するために選択された原料ガス／前駆体混合物（図示せず）に流体結合される。例えば、二酸化ケイ素（ＳｉＯ２）などの誘電体材料の堆積を実行するように処理システムが構成されているとき、原料ガス／前駆体混合物は、シラン、ジシラン、ＴＳＡ、ＤＳＡ、ＴＥＯＳ、ＯＭＣＴＳ、ＴＭＤＳＯなど、シリコンを含むガスまたは前駆体を含むことができる。この混合物は、ガス反応領域１３０内で酸化性ガス混合物と反応することができ、この酸化性ガス混合物は、プラズマ発生したラジカル酸素（Ｏ）、活性化された分子状酸素（Ｏ２）、オゾン（Ｏ３）などのプラズマ励起種を含むことができる。プラズマ励起種がイオン抑制器１１０の孔１２２を通り抜けるときにプラズマ励起種中の過剰のイオンを減らすことができ、プラズマ励起種がシャワーヘッド１０４のチャネル１２６を通り抜けるときにプラズマ励起種中の過剰のイオンをさらに減らすことができる。他の例として、基板表面でエッチングを実行するように処理システムが構成されているとき、原料ガス／前駆体混合物は、酸化剤、ハロゲン、水蒸気および／またはキャリアガスなどのエッチング剤を含むことができ、このエッチング剤は、ガス反応領域１３０内で、シャワーヘッド１０４のチャネルの第１のセットから分配されたプラズマ励起種と混合する。
この処理システムはさらに、プラズマ励起領域１１２内でプラズマを発生させるためのパワーを蓋１０６および／またはイオン抑制器１１０に供給するためにＣＣＰユニット１０２に電気的に結合された電源１４０を含むことができる。この電源を、実行されるプロセスに応じて調整可能な量のパワーをＣＣＰユニット１０２に送達するように構成することができる。例えば堆積プロセスでは、ＣＣＰユニット１０２に送達するパワーを調整して、堆積層の共形性を設定することができる。堆積した誘電体膜は通常、プラズマ出力が低いほどより流動性であり、プラズマ出力を増大させると流動性から共形性へと変化する。例えば、プラズマ励起領域１１２内に維持されたアルゴンを含むプラズマは、プラズマ出力を、約１０００ワットから約１００ワットまたはそれ以下（例えば約９００、８００、７００、６００もしくは５００ワットまたはそれ以下）に低下させると、より流動性の酸化ケイ素層を生成することができ、プラズマ出力を、約１０００ワットまたはそれ以上（例えば約１０００、１１００、１２００、１３００、１４００、１５００、１６００、１７００ワットまたそれ以上）に増大させると、より共形性の層を生成することができる。プラズマ出力を低出力から高出力へ高めたとき、流動性の堆積膜から共形性の堆積膜への遷移は、比較的に滑らかで連続的であることもあり、または比較的に離散したしきい値を横切って進行することもある。プラズマ出力を（単独でまたは他の堆積パラメータに加えて）調整して、堆積膜の共形特性と流動特性の間の平衡を選択することができる。
この処理システムはさらに、基板（例えばウエハ基板）を支持し移動させるように動作可能なペデスタル１５０を含むことができる。ペデスタル１５０とシャワーヘッド１０４の間の距離は、ガス反応領域１３０を部分的に画定する。ガス反応領域１３０を拡張または縮小し、シャワーヘッド１０４を通り抜けたガスに対してウエハ基板を再配置することによりウエハ基板の堆積またはエッチングを達成するために、ペデスタルを、処理チャンバ１００内で垂直方向または軸方向に調整できるようにすることができる。ペデスタル１５０は、ウエハ基板の温度を制御するためにその中を熱交換流体が流れる熱交換チャネルを有することができる。この熱交換流体を循環させることによって、基板温度を比較的に低い温度（例えば約−２０℃から約９０℃）に維持することができる。例示的な熱交換流体にはエチレングリコール、水などがある。
基板を加熱温度（例えば約９０℃から約１１００℃）に維持するため、加熱要素（抵抗性加熱要素など）を含むようにペデスタル１５０を構成することもできる。例示的な加熱要素には、２周以上巻かれて平行同心円の形態をなす、基板支持プラテンに埋め込まれた単一ループヒータ要素が含まれる。このヒータ要素の外側部分は、支持プラテンの周界に隣接して延びることができ、内側部分は、より小さな半径を有する同心円経路に沿って延びることができる。ヒータ要素への配線はペデスタルの脚を通して実施することができる。
図３は、イオン抑制器プレートとシャワーヘッドの両方を含む処理システム内を通る一対のガス混合物のガス流路の略図である。ブロック３０５で、プラズマ発生ガス混合物などの第１のガスを、ガス入口を通して処理チャンバに供給する。第１のガスは、以下のガスのうちの１種または数種のガスを含むことができる：ＣＦ４、ＮＨ３、ＮＦ３、Ａｒ、Ｈｅ、Ｈ２Ｏ、Ｈ２、Ｏ２など。ブロック３１０で、処理チャンバ内で第１のガスをプラズマ放電によって励起させて、１種または数種のプラズマ流出物を形成する。あるいは（またはインシトゥ（ｉｎ−ｓｉｔｕ）プラズマ発生に加えて）、処理チャンバに結合された遠隔プラズマシステム（ＲＰＳ）を使用してエクスシトゥ（ｅｘ−ｓｉｔｕ）プラズマを発生させ、そのプラズマ励起生成物を処理チャンバ内へ導入することもできる。ＲＰＳプラズマ励起生成物は、イオン性荷電プラズマ種ならびに中性種およびラジカル種を含むことができる。
プラズマ流出物をインシトゥプラズマユニットによって発生させるのか、もしくはＲＰＳユニットによって発生させるのか、またはその両方によって発生させるのかに関わらず、ブロック３１５で、プラズマ流出物を処理チャンバ内のイオン抑制器に通す。イオン抑制器は、第１のプラズマ活性化ガスが処理チャンバ内のガス反応領域に移動するときに、イオン種の通り抜けを遮断しかつ／または制御し、同時にラジカル種および／または中性種の通り抜けを許すことができる。ブロック３２０で、処理チャンバ内に第２のガスを導入する。前述のとおり、第２のガスの内容は実行するプロセスに依存する。例えば、第２のガスは、堆積プロセス用の堆積化合物（例えばＳｉを含む化合物）およびエッチングプロセス用のエッチング剤を含むことができる。第１のガスおよび第２のガスが処理チャンバのガス反応領域に到達するまで、第１ガスと第２のガスの間の接触および反応を防ぐことができる。
ガス反応領域よりも前に第１のガスと第２のガスが相互作用することを防ぐ１つの方法は、２重ゾーンシャワーヘッド（ｄｕａｌ−ｚｏｎｅ ｓｈｏｗｅｒｈｅａｄ）（ＤＺＳＨ）内の別個のチャネルにこれらのガスを流す方法である。ブロック３３０は、活性化された第１のガスおよび活性化された第２のガスがＤＺＳＨを通り抜けることを示す。ＤＺＳＨは、複数の第２のチャネルを通り抜ける第２のガスと相互作用することなく第１の活性化ガスがシャワーヘッドを通り抜けることを可能にする複数の第１のチャネルを有する。ＤＺＳＨを出た後、ブロック３３５で、第１のガスと第２のガスは、処理チャンバのガス反応領域内で互いに混合する。実行するプロセスに応じて、この混合されたガスは反応して、基板の露出した表面に材料を堆積させ、もしくは基板から材料をエッチングし、またはその両方を達成する。
次に図４を参照すると、イオン抑制要素としても機能するシャワーヘッド４２８を有する処理システム４００の略断面図が示されている。図示の構成では、プラズマを発生させるための第１のガス源４０２が、任意選択のＲＰＳユニット４０４に流体結合されており、ＲＰＳユニット４０４で第１のプラズマを発生させ、そのプラズマ流出物を、ガス入口４０８を通して処理チャンバ４０６内へ運ぶことができる。処理チャンバ４０６内で、このガスは、ガス分配プレート４１２の孔４１０を通り抜け、ガス分配プレート４１２とシャワーヘッド４２８の間に画定されたガス領域４１４に入ることができる。いくつかの実施形態では、この領域４１４がプラズマ励起／活性化領域であり、このプラズマ励起／活性化領域では、ガスをさらに励起させかつ／または第１のプラズマを発生させるために、ガス分配プレート４１２およびシャワーヘッド４２８が第１および第２の電極として機能する。ガス分配プレート４１２の孔４１０は、寸法または幾何形状に関して、逆流しているプラズマを非活性化するように構築することができる。ガスを励起させかつ／またはプラズマを発生させるため、プレート４１２およびシャワーヘッド４２８を、プレート４１２およびシャワーヘッド４２８に電荷を供給するＲＦパワージェネレータ４２２に結合することができる。一実施形態では、シャワーヘッド４２８を接地し、プレート４１２に電荷を供給する。
ガス領域４１４内の励起したガス（以後、励起ガス）または活性化ガスは、シャワーヘッド４２８を通り抜け、基板４１８に隣接するガス反応領域４１６に入って、基板の表面から材料をエッチングし、かつ／または基板の表面に材料を堆積させることができる。シャワーヘッド４２８は、励起ガスがガス領域４１４からガス反応領域４１６内に入ることを可能にし、同時に第２のガス（すなわち前駆体ガス／混合物）が外部源（図示せず）から第２のガス入口４２６を通してガス反応領域４１６内に流入することを可能にするＤＺＳＨとすることができる。ＤＺＳＨは、活性化ガス／励起ガスおよび第２のガスがガス反応領域４１６内に流入する前に、これらのガスが混合することを防ぐことができる。
励起ガスは、ＤＺＳＨの複数の孔４２４を通り抜けることができる。ＤＺＳＨの複数の孔４２４は、寸法および／または幾何形状に関して、プラズマ（すなわちイオン性荷電種）の通り抜けを制御または防止し、同時に活性化ガス／励起ガス（すなわち反応性ラジカルまたは帯電していない中性種）の通り抜けを許すように構築することができる。図７Ａは、ＤＺＳＨで使用することができる孔の輪郭の例示的な実施形態を示す。孔４２４の他に、ＤＺＳＨは、その中を第２のガスが流れる複数のチャネル４２６を含むことができる。第２のガス（前駆体ガス）は、孔４２４に隣接して配置された１つまたは複数の開口部（図示せず）を通ってシャワーヘッド４２８を出ることができる。ＤＺＳＨは、第２のガス送達システムとイオン抑制要素の両方として機能することができる。
前述のとおり、混合されたこれらのガスは、プラテン４２０上に配置されていることがある基板４１８の表面に材料を堆積させ、かつ／または基板４１８の表面から材料をエッチングすることができる。プラテン４２０は、処理チャンバ４０６内で垂直方向に移動できるようにすることができる。処理チャンバ４０６内での基板４１８の処理は、孔４２４の輪郭、ガス領域４１４内の圧力および／または処理チャンバ内の基板４１８の位置の影響を受けることがある。さらに、孔４２４の輪郭および／またはガス領域４１４内の圧力によって、ガス励起領域４１６内へ通すイオン種（プラズマ）の濃度を制御することができる。このガス混合物のイオン濃度は、エッチング選択性を変化させるだけでなく、堆積する誘電体材料の共形性−流動性平衡を変化させることができる。
次に図５を参照すると、イオン抑制要素として機能するプレート５１２（すなわちイオン抑制器プレート）を有する他の処理システム５００の略断面図が示されている。図示の構成では、第１のガス源５０２がＲＰＳユニット５０４に流体結合されており、ＲＰＳユニット５０４で第１のプラズマを発生させ、そのプラズマ流出物を、ガス入口５０８を通して処理チャンバ５０６内へ運ぶことができる。このプラズマ流出物を、イオン抑制器プレート５１２とガス入口５０８の間に画定されたガス領域５１４に運ぶことができる。ガス領域５１４内で、このガスは、イオン抑制器５１２の孔５１０を通り抜け、イオン抑制器５１２と基板５１８の間に画定されたガス反応／活性化領域５１６に入ることができる。上記の説明と同様に、基板５１８をプラテン５２０上に支持して、処理チャンバ５０６内で基板を移動させることができるようにすることができる。
上記の説明と同様に、孔５１０は、寸法および／または幾何形状に関して、イオン性荷電種（すなわちプラズマ）の通り抜けを防止および／または制御し、同時に帯電していない中性種またはラジカル種（すなわち活性化ガス）の通り抜けを許すように構築することができる。イオン種の通り抜けは、ガス領域５１４内のプラズマの圧力を変化させることによって制御できることがある。ガス領域５１４内の圧力は、ガス入口５０８を通して送達されるガスの量を制御することによって制御することができる。前駆体ガス（すなわち第２のガス）は、イオン抑制器５１２の垂直方向下方にまたはイオン抑制器５１２と平行に配置された１つまたは複数の第２のガス入口５２２から処理チャンバ５０６内に導入することができる。第２のガス入口５２２は、処理チャンバ５０６の壁に配置された１つまたは複数の開口部、管など（図示せず）を含むことができ、さらに、それらの開口部、管などに前駆体ガスを送達する１つまたは複数のガス分配チャネル（図示せず）を含むことができる。一実施形態では、イオン抑制器５１２が、その中を前駆体ガスが流れる１つまたは複数の第２のガス入口を含む。イオン抑制器５１２の第２のガス入口は、この前駆体ガスをガス反応領域５１６内に送達することができる。このような一実施形態では、イオン抑制器５１２が、イオン抑制器と上で説明した２重ゾーンシャワーヘッドの両方の機能を果たす。エッチングプロセスおよび／または堆積プロセスのために、孔５１０を通り抜けた活性化ガスと処理チャンバ５０６内に導入された前駆体ガスをガス反応チャンバ５１６内で混合することができる。
以上では処理チャンバの例示的な実施形態を説明した。以下では、イオン抑制器プレート４１２、５１２、シャワーヘッド４２８などのイオン抑制器の例示的な実施形態を説明する。
例示的なイオン抑制器
図６Ａは、本発明の一実施形態に基づくイオン抑制要素６００（イオン抑制器）の略斜視図である。イオン抑制要素６００は例えば図４および／または図５のイオン抑制器プレートに対応する。この斜視図は、イオン抑制要素またはイオン抑制プレート６００の上面を示す。イオン抑制プレート６００は概して円形の形状を有することができ、また、第１の領域（例えばプラズマ領域）から第２の領域（例えばガス反応領域またはシャワーヘッド）へのプラズマ流出物の通り抜けを可能にする１つまたは複数の貫通孔をそれぞれが含む複数のプラズマ流出物通路６０２を含むことができる。一実施形態では、通路６０２の貫通孔が、１つまたは複数の円形のパターンを形成するように配置されるが、他の構成も可能である。前述のとおり、これらの貫通孔は、幾何形状または寸法に関して、イオン種の通り抜けを制御または防止し、同時に帯電していない中性種またはラジカル種の通り抜けを許すように構成することができる。これらの貫通孔は、イオン抑制プレート６００の上面の近くのより大きな内径と、イオン抑制プレートの底面の近くのより小さな内径とを有することができる。さらに、これらの貫通孔は概して円筒形もしくは円錐形とし、またはこれらの組合せとすることができる。これらの貫通孔の輪郭の例示的な実施形態が図７Ａ〜図７Ｂに示されている。
図６Ａは、本発明の一実施形態に基づくイオン抑制要素６００（イオン抑制器）の略斜視図である。イオン抑制要素６００は例えば図４および／または図５のイオン抑制器プレートに対応する。この斜視図は、イオン抑制要素またはイオン抑制プレート６００の上面を示す。イオン抑制プレート６００は概して円形の形状を有することができ、また、第１の領域（例えばプラズマ領域）から第２の領域（例えばガス反応領域またはシャワーヘッド）へのプラズマ流出物の通り抜けを可能にする１つまたは複数の貫通孔をそれぞれが含む複数のプラズマ流出物通路６０２を含むことができる。一実施形態では、通路６０２の貫通孔が、１つまたは複数の円形のパターンを形成するように配置されるが、他の構成も可能である。前述のとおり、これらの貫通孔は、幾何形状または寸法に関して、イオン種の通り抜けを制御または防止し、同時に帯電していない中性種またはラジカル種の通り抜けを許すように構成することができる。これらの貫通孔は、イオン抑制プレート６００の上面の近くのより大きな内径と、イオン抑制プレートの底面の近くのより小さな内径とを有することができる。さらに、これらの貫通孔は概して円筒形もしくは円錐形とし、またはこれらの組合せとすることができる。これらの貫通孔の輪郭の例示的な実施形態が図７Ａ〜図７Ｂに示されている。
これらの複数の通路は、イオン抑制プレート６００の表面に実質的に均一に分布させることができ、それにより、中性種またはラジカル種は、イオン抑制プレート６００を均等に通り抜けて第２の領域に入ることができる。図５の実施形態などのいくつかの実施形態では、処理チャンバがイオン抑制プレート６００だけを含み、他の実施形態では、処理チャンバが、イオン抑制プレート６００と、図６Ｂのシャワーヘッドなどのシャワーヘッドの両方を含み、または処理チャンバが、２重ゾーンシャワーヘッドとイオン抑制プレートの両方として機能する単一のプレートを含む。
図６Ｂは、本発明の一実施形態に基づくシャワーヘッド６２０の略下面図である。シャワーヘッド６２０は例えば図４に示したシャワーヘッドに対応する。前述のとおり、シャワーヘッド６２０は、ガス反応領域の垂直方向上方に、ガス反応領域に隣接して配置することができる。イオン抑制プレート６００と同様に、シャワーヘッド６２０も概して円形の形状を有することができ、複数の第１の孔６２２および複数の第２の孔６２４を含むことができる。複数の第１の孔６２２は、プラズマ流出物がシャワーヘッド６２０を通り抜けてガス反応領域に入ることを可能にし、複数の第２の孔６２４は、シリコン前駆体などの駆体ガス、エッチング剤などがガス反応領域に入ることを可能にする。
複数の第１の孔６２２は、シャワーヘッド６２０の上面からシャワーヘッドを貫通して延びる貫通孔とすることができる。一実施形態では、複数の第１の孔６２２がそれぞれ、シャワーヘッド６２０の上面の近くのより小さな内径（ＩＤ）と底面の近くのより大きなＩＤとを有する。さらに、プラズマ流出物がシャワーヘッドを出たときにガス反応領域内でプラズマ流出物を均一に分配するのを助け、それによってプラズマ流出物と前駆体ガスの均一な混合を促進するため、複数の第１の孔６２２の底縁を面取り６２６することができる。第１の孔６２２のより小さなＩＤは約０．５ｍｍから約２０ｍｍの間とすることができる。一実施形態では、このより小さなＩＤが約１ｍｍから６ｍｍの間である。第１の孔６２２の断面形状は、概して円筒形もしくは円錐形とし、またはこれらの組合せとすることができる。さらに、処理チャンバ内でイオン抑制要素６００とシャワーヘッド６２０の両方を使用するときには、第１の孔６２２を通路６０２の貫通孔と同心で整列させることができる。この同心整列は、処理チャンバ内において活性化ガスがイオン抑制要素６００とシャワーヘッド６２０の両方を通り抜けるのを容易にすることがある。
他の実施形態では、複数の第１の孔６２２が、シャワーヘッド６２０の上面からシャワーヘッドを貫通して延びる貫通孔であり、第１の孔６２２がそれぞれ、シャワーヘッドの上面の近くのより大きなＩＤと、シャワーヘッドの底面の近くのより小さなＩＤとを有する。さらに、第１の孔６２２は、このより大きなＩＤとより小さなＩＤとの間で遷移するテーパ領域を含むことができる。このような構成は、プラズマが孔を通り抜けるのを防止または調節し、同時に活性化ガスが通り抜けることを許すことができる。このような実施形態は、イオン抑制要素６００の代わりにまたはイオン抑制要素６００に加えて使用することができる。このような貫通孔の例示的な実施形態が図７Ａに示されている。
複数の第１の孔６２２の数は約６０から約２０００個の間とすることができる。複数の第１の孔６２２はさまざまな形状を有することができるが、一般に丸形である。処理チャンバがイオン抑制プレート６００とシャワーヘッド６２０の両方を含む実施形態では、プラズマ流出物がイオン抑制プレートおよびシャワーヘッドを通り抜けるのを容易にするために、複数の第１の孔６２２を通路６０２と実質的に整列させることができる。
複数の第２の孔６２４は、シャワーヘッド６２０の底面からシャワーヘッドを部分的に貫いて延びることができる。この複数の第２の孔を、前駆体ガス（例えば堆積化合物、エッチング剤など）を外部ガス源（図示せず）から第２の孔６２４へ送達する複数のチャネル（図示せず）に結合または接続することができる。第２の孔は、シャワーヘッド６２０の底面のより小さなＩＤと、シャワーヘッドの内部のより大きなＩＤとを含むことができる。第２の孔６２４の数は、約１００から約５０００個の間とすることができ、または異なる実施形態では約５００から約２０００個の間とすることができる。第２の孔のより小さなＩＤの直径（すなわち底面における孔の直径）は、約０．１ｍｍから約２ｍｍの間とすることができる。第２の孔６２４は一般に丸形であり、同様に円筒形もしくは円錐形またはこれらの組合せとすることができる。プラズマ流出物と前駆体ガスの均一な混合を促進するため、第１の孔と第２の孔の両方をシャワーヘッド６２０の底面に均一に分布させることができる。
図７Ａを参照すると、貫通孔の例示的な輪郭が示されている。図示された貫通孔は一般に、孔の上端の近くの大きな内径（ＩＤ）の領域と、孔の底または下端の近くのより小さなＩＤの領域とを含む。このより小さなＩＤは約０．２ｍｍから約５ｍｍの間とすることができる。また、孔のアスペクト比（すなわちより小さなＩＤと孔の長さの比）は約１から２０とすることができる。このような構成は、プラズマ流出物のイオン種の通り抜けを実質的に遮断および／または制御し、同時にラジカル種または中性化学種の通り抜けを許すことができる。例えば、アスペクト比を変更することで、貫通孔を通り抜けるプラズマの量を調節することができる。プラズマの通り抜けは、貫通孔の直上の領域内のプラズマの圧力を変化させることによっても調節することができる。
次に具体的な輪郭を参照する。貫通孔７０２は、孔の上端の大きなＩＤの領域７０４と孔の下端の小さなＩＤの領域７０６とを含み、大きなＩＤと小さなＩＤの間に段状の縁がある。貫通孔７１０は、孔の上端の大きなＩＤの領域７１２と孔の下端の大きなＩＤの領域７１６とを含み、これらの領域間に小さなＩＤの領域７１４がある。大きなＩＤの領域と小さなＩＤの領域との間の遷移は、それらの領域間の遷移を急にするために段状またはブラント（ｂｌｕｎｔ）とすることができる。
貫通孔７２０は、孔の上端の大きなＩＤの領域７２２と孔の下端の小さなＩＤの領域７２６とを含み、大きなＩＤの領域と小さなＩＤの領域の間に、角度θで遷移するテーパの付いた領域（以後、テーパ領域）７２４がある。小さなＩＤの領域７２６の高さ７２８は、孔の全高７２７、テーパ領域７２４の角度θ、大きなＩＤおよび小さなＩＤによって決まる。一実施形態では、テーパ領域７２４が、約１５°から約３０°の間、好ましくは約２２°の角度を含み、全高７２７が約４ｍｍから約８ｍｍの間、好ましくは約６．３５ｍｍであり、大きなＩＤが約１ｍｍから約４ｍｍの間、好ましくは約２．５４ｍｍであり、小さなＩＤが約０．２ｍｍから１．２ｍｍの間、好ましくは約０．８９ｍｍであり、その結果、小さなＩＤの領域７２６の高さ７２８が約１ｍｍから約３ｍｍの間、好ましくは約２．１ｍｍである。
貫通孔７３０は、孔の上端の第１のＩＤ領域７３２と、第１のＩＤ領域７３２と同心に整列し、第１のＩＤ領域７３２の垂直方向下方に位置する第２のＩＤ領域７３４と、第２のＩＤ領域７３４と同心に整列し、第２のＩＤ領域７３４の垂直方向下方に位置する第３のＩＤ領域７３６とを含む。第１のＩＤ領域７３２は大きなＩＤを含み、第２のＩＤ領域７３４は小さなＩＤを含み、第３のＩＤ領域７３６は、第２のＩＤ領域７３４よりわずかに大きなＩＤを含む。第３のＩＤ領域７３６は孔の下端まで延び、または出口ＩＤ７３７までの外側へ広がるテーパを有することができる。第３のＩＤ領域７３６と出口ＩＤ７３７の間のテーパは角度θ３で広がり、角度θ３は約１５°から約３０°の間とすることができ、約２２°であると好ましい。第２のＩＤ領域７３４は、第１のＩＤ領域７３２から角度θ１で遷移する面取りされた縁を含むことができ、角度θ１は約１１０°から約１４０°の間とすることができる。同様に、第２のＩＤ領域７３４は、第３のＩＤ領域７３６まで角度θ２で遷移する面取りされた縁を含むことができ、角度θ２も約１１０°から約１４０°の間とすることができる。一実施形態では、第１の領域７３２の大きなＩＤが約２．５ｍｍから約７ｍｍの間、好ましくは約３．８ｍｍであり、第２のＩＤ領域７３４の小さなＩＤが約０．２ｍｍから約５ｍｍの間、好ましくは約０．４ｍｍであり、第３のＩＤ領域７３６のわずかに大きなＩＤが約０．７５ｍｍから約２ｍｍの間、好ましくは約１．１ｍｍであり、出口ＩＤが約２．５ｍｍから約５ｍｍの間、好ましくは約３．８ｍｍである。
大きなＩＤの領域と小さなＩＤの領域の間の遷移（ブラント、段状、テーパなど）は、イオン種が孔を通り抜けることを実質的に遮断し、同時にラジカル種または中性種の通り抜けを許すことができる。例えば、次に図７Ｂを参照すると、大きなＩＤの領域７２２と小さなＩＤの領域７２６の間に遷移領域７２４を含む貫通孔７２０の拡大図が示されている。テーパ領域７２４は、プラズマ７２５が貫通孔７２０を通り抜けるのを実質的に防ぐことができる。例えば、プラズマ７２５が貫通孔７２０に侵入すると、テーパ領域７２４の壁と接触することによってイオン種は非活性化または接地し、それによってプラズマが貫通孔を通り抜けることを制限し、貫通孔７２０よりも上方の領域にプラズマを閉じ込めることができる。しかしながら、ラジカル種または中性種は貫通孔７２０を通り抜けることができる。したがって、貫通孔７２０はプラズマ７２０をフィルタリングして、不必要な種の通り抜けを防止または制御する。例示的な一実施形態では、貫通孔の小さなＩＤの領域７２６が１ｍｍ以下のＩＤを含む。貫通孔を通り抜けるラジカル種および／または中性種の濃度をかなりのレベルに維持するため、小さなＩＤの領域の長さおよび／またはテーパ角を制御することができる。
プラズマの通り抜けを防ぐだけでなく、本明細書で説明した貫通孔を使用して、所望のレベルのプラズマが貫通孔を通り抜けることができるように、プラズマの通り抜けを調節することもできる。貫通孔を通り抜けるプラズマの流れの調節は、所望の割合のプラズマが、非活性化したりまたは接地したりすることなくイオン抑制器を通り抜けることができるように、イオン抑制器プレートの上方のガス領域内のプラズマの圧力を増大させることを含むことができる。
次に図８を参照すると、ＣＣＰユニット８００の略図が示されている。具体的には、図示のＣＣＰユニット８００は、プラズマを閉じ込めるプラズマ発生領域８１０を画定するトッププレート８０２およびボトムプレート８０４を含む。前述のとおり、ＲＰＳ（図示せず）によってプラズマを発生させ、そのプラズマを、貫通孔８０６を通してプラズマ発生領域８１０に送達することができる。あるいはまたはそれに加えて、例えばトッププレート８０２およびボトムプレート８０４を、発電ユニット（図示せず）に結合された第１および第２の電極として利用することによって、ＣＣＰユニット８００内でプラズマを発生させることもできる。
トッププレート８０２は、プロセスガスおよび／またはプラズマがプラズマ発生領域８１０内に送達されることを許し、同時にプラズマがトッププレート８０２を通って逆流することを防ぐ貫通孔８０６を含むことができる。貫通孔８０６は、貫通孔７３０と同様の輪郭を有することができ、第１、第２および第３のＩＤ領域（それぞれ８２０、８２２および８２４）、ならびに隣接する領域間の面取りされた縁（８２８および８２９）、および第３のＩＤ領域８２４と出口ＩＤの間で遷移するテーパ領域８２６を有することができる。第３のＩＤ領域８２４と出口ＩＤの間のテーパ領域８２６および／または第２のＩＤ領域と第３のＩＤ領域（それぞれ８２２および８２４）の間の面取りされた縁は、プラズマが貫通孔８０６内に侵入したときにイオン種を非活性化または接地することによって、プラズマの逆流を防ぐことができる。
同様に、ボトムプレート８０４は、ラジカル種または中性種が貫通孔を通り抜けることを許し、同時にイオン種の通り抜けを防止または制御する貫通孔８０８を含むことができる。貫通孔８０８は、貫通孔７２０と同様の輪郭を有することができ、大きなＩＤの領域８３０、小さなＩＤの領域８３２、および大きなＩＤの領域８３０と小さなＩＤの領域８３２の間で遷移するテーパ領域８３４を有することができる。テーパ領域８３４は、以前に説明したようにイオン種を非活性化または接地することによって貫通孔８０８を通り抜けるプラズマの流れを防ぐことができ、同時にラジカル種または中性種が貫通孔８０８を通り抜けることを許す。
プラズマが貫通孔８０６および／または８０８を通り抜けることをさらに防ぐため、トッププレート８０２および／またはボトムプレート８０４は電荷を受け取って、プラズマを電気的にバイアスし、プラズマ発生領域８１０内にプラズマを閉じ込め、かつ／またはボトムプレートを通り抜ける活性化ガス中のイオン濃度を調整することができる。ＣＣＰユニット８００内でトッププレート８０２およびボトムプレート８０４を使用することによって、プラズマ発生領域８１０内でプラズマを実質的に発生させかつ／または維持することができ、同時にラジカル種および中性種をガス反応領域に送達して、１種または数種の前駆体ガスと混合し、それによって基板表面から材料をエッチングし、または基板表面に材料を堆積させる。
例示的なプロセス
本発明のいくつかの実施形態によれば、前述のイオン抑制器を使用して、エッチングプロセスまたは堆積プロセス用のラジカル種および／または中性種を提供することができる。例えば、一実施形態では、イオン抑制器を使用して、金属含有膜を選択的にエッチングするためのフッ素ラジカルを提供する。フッ素ラジカルを使用することによって、酸化ケイ素膜に対する金属含有膜の約８０：１以上の高いエッチング速度選択性を得ることができる。さらに、窒化ケイ素膜に対する金属含有膜の約３０：１以上の高いエッチング速度選択性を得ることもできる。このようなプロセスの１つの用途は、３次元デバイス構造体中の金属含有膜の除去である。本発明の実施形態に従ってエッチングすることができる金属含有膜には例えば、タングステン膜、ハフニウム膜、ジルコニウム膜、タンタル膜、チタン膜など、ならびにこれらの膜のケイ酸塩および酸化物が含まれる。
本発明のいくつかの実施形態によれば、前述のイオン抑制器を使用して、エッチングプロセスまたは堆積プロセス用のラジカル種および／または中性種を提供することができる。例えば、一実施形態では、イオン抑制器を使用して、金属含有膜を選択的にエッチングするためのフッ素ラジカルを提供する。フッ素ラジカルを使用することによって、酸化ケイ素膜に対する金属含有膜の約８０：１以上の高いエッチング速度選択性を得ることができる。さらに、窒化ケイ素膜に対する金属含有膜の約３０：１以上の高いエッチング速度選択性を得ることもできる。このようなプロセスの１つの用途は、３次元デバイス構造体中の金属含有膜の除去である。本発明の実施形態に従ってエッチングすることができる金属含有膜には例えば、タングステン膜、ハフニウム膜、ジルコニウム膜、タンタル膜、チタン膜など、ならびにこれらの膜のケイ酸塩および酸化物が含まれる。
イオン抑制器を使用して、イオン濃度よりも高いラジカル濃度を有する反応性ガスを提供することができる。プラズマの荷電粒子の大部分はイオン抑制器によってフィルタリングまたは除去されるため、エッチングプロセスの間、基板は通常、バイアスされない。ラジカルおよび他の中性種を使用するこのようなプロセスは、スパッタリングおよび衝撃（ｂｏｍｂａｒｄｍｅｎｔ）を含む従来のプラズマエッチングプロセスに比べて、プラズマ損傷を減らすことができる。さらに、本発明の実施形態は、液体の表面張力によって小さなフィーチャの曲りおよび剥離が生じることがある従来の湿式エッチングプロセスよりも有利である。
図９は、金属含有層ならびに酸化ケイ素層および／または窒化ケイ素層を含む基板から金属含有膜を選択的にエッチングする本発明の一実施形態に基づく例示的な方法を示す簡略化した流れ図である。この方法は、基板処理チャンバのプラズマ発生領域内にフッ素含有ガスを流入させること（９０２）を含む。このフッ素含有ガスは、ＨＦ、Ｆ２、ＮＦ３、ＣＦ４、ＣＨＦ３、Ｃ２Ｆ６、Ｃ３Ｆ６、ＢｒＦ３、ＣｌＦ３、ＳＦ６などを含むことができる。他の実施形態は、フッ素含有ガスの代わりにまたはフッ素含有ガスに加えて、Ｃｌ２、ＨＢｒ、ＳｉＣｌ４などの他のハロゲン含有ガスを含むことができる。図９の例示的な方法では、フッ素含有ガスがさらに、Ｏ２、Ｏ３、Ｎ２Ｏ、ＮＯなどの１種または数種の酸素源を含むことができる。酸素を使用することによって、酸化ケイ素および／または窒化ケイ素のエッチング速度に対する影響を最小限に抑えつつ、金属含有層のエッチング速度を増大させることができる。フッ素含有ガスはさらに、Ｈ２、Ｈｅ、Ｎ２、Ａｒなどの１種または数種の不活性ガスを含むことができる。不活性ガスを使用してプラズマ安定性を向上させることができる。これらのさまざまなガスの流量および比を使用して、エッチング速度およびエッチング選択性を制御することができる。一実施形態では、フッ素含有ガスが、約５ｓｃｃｍから５００ｓｃｃｍの間の流量のＮＦ３、約０ｓｃｃｍから５０００ｓｃｃｍの間の流量のＯ２、および約０ｓｃｃｍから５０００ｓｃｃｍの間の流量のＨｅを含む。処理チャンバ構成、基板サイズ、エッチングするフィーチャの形状寸法およびレイアウトを含むいくつかの因子によっては、他のガスおよび／または流量を使用することができることを当業者は理解するであろう。
この方法はさらに、フッ素含有ガスにエネルギーを印加して、プラズマ発生領域内でプラズマを発生させること（９０４）を含む。当業者には理解されるとおり、このプラズマは、ラジカルおよびイオンを含むいくつかの荷電種および中性種を含むことがある。このプラズマは、知られている技法（例えばＲＦ、誘導結合、容量結合など）を使用して発生させることができる。一実施形態では、約１５Ｗから５０００Ｗの間のソースパワー、約０．２トルから３０トルの間の圧力のＣＣＰユニットを使用してエネルギーが供給される。ＣＣＰユニットは、処理チャンバのガス反応領域から離れた位置に配置することができる。例えば、イオン抑制器によって、ＣＣＰユニットおよびプラズマ発生領域をガス反応領域から分離することができる。
この方法はさらに、このプラズマをフィルタリングして、フッ素イオン濃度よりも高いフッ素ラジカル濃度を有する反応性ガスを提供すること（９０６）を含む。プラズマは、基板処理チャンバのプラズマ発生領域とガス反応領域の間に配置されたイオン抑制器を使用してフィルタリングすることができる。このイオン抑制器は、プラズマ発生領域とガス反応領域の間でフッ素ラジカルおよび中性種が移動することを可能にする複数のチャネルを含むことができる。このイオン抑制器は、プラズマ発生領域から移動するイオンの一部または全部を除去するように構成することができる。例えば、一実施形態では、この反応性ガスがイオンを実質的に含まないような態様で、イオンのかなりの部分が除去される。
この方法はさらに、この反応性ガスを、基板処理チャンバのガス反応領域内に流入させること（９０８）を含む。一実施形態では、イオン抑制器がシャワーヘッドとして構成され、イオン抑制器を出た反応性ガスが、基板に隣接するガス反応領域内に流入する。あるいは、イオン抑制器を出た反応性ガスが、シャワーヘッドまたは他のガス分配器を通り抜けてガス反応領域内に流入する。
この方法はさらに、基板処理チャンバのガス反応領域内で基板を反応性ガスにさらすこと（９１０）を含む。一実施形態では、基板の温度が約−１０℃から２００℃の間であり、基板処理チャンバ内の圧力が約０．２トルから３０トルの間である。上で説明したいくつかの因子に応じて、他の温度および／または圧力を使用することもできることを当業者は理解するであろう。この反応性ガスは、この反応性ガスが酸化ケイ素層および／または窒化ケイ素層をエッチングするよりも速いエッチング速度で金属含有層をエッチングする。
図１０は、酸化ケイ素膜および／または窒化ケイ素膜などの誘電体膜のエッチング速度よりも速い金属含有膜のエッチング速度を提供する本発明の一実施形態に基づく例示的なエッチングプロセスを示す簡略化した流れ図である。このプロセスは、フッ素含有ガスから、フッ素ラジカルおよびフッ素イオンを含むプラズマを発生させること（１００２）を含む。上で説明したとおり、このプラズマは、ガス反応領域から分離された基板処理チャンバのプラズマ発生領域内で形成することができる。このプロセスはさらに、このプラズマからフッ素イオンの一部を除去して、フッ素イオン濃度よりも高いフッ素ラジカル濃度を有する反応性ガスを提供すること（１００４）を含む。フッ素イオンの前記一部は、イオン抑制器を使用して除去することができる。このプロセスはさらに、金属含有層および誘電体層を含む基板を反応性ガスにさらし、この反応性ガスが、この反応性ガスが酸化ケイ素層および／または窒化ケイ素層をエッチングするよりも速いエッチング速度で金属含有層をエッチングすること（１００６）を含む。
図９〜図１０に示した例示的なプロセスは、図６Ａ、図６Ｂ、図７Ａ、図７Ｂおよび図８〜図９に示したイオン抑制要素の図１〜図５に示した処理チャンバとともに使用することだけに限定されないことを理解すべきである。本発明の実施形態に基づくプロセスは、他のハードウェア構成を使用して実行することもできる。また、図９〜図１０に示した具体的なステップは、本発明の実施形態に基づく特定の方法を提供する。代替実施形態によれば、上で概説したステップをシステムソフトウェアによって連続的に繰り返すことができ、他のステップシーケンスを実行することができる。例えば、上で概説したステップを異なる順序で実行することができる。さらに、図９〜図１０に示した個々のステップは、その個々のステップに対して適当なさまざまなシーケンスで実行することができる複数のサブステップを含むことができる。さらに、その特定の用途に応じて、追加のステップを追加または除去することもできる。当業者は、多くの変更形態、改変形態および代替形態を認識するであろう。
本明細書の全体を通して論じた方法および装置は、単なる例として提供したものであることに留意すべきである。さまざまな実施形態は、さまざまなステップまたは構成要素を適宜、省略し、置換し、または追加することができる。例えば、ある実施形態に関して説明した諸特徴を、他のさまざまな他の実施形態において組み合わせることができることを理解すべきである。さらに、実施形態は、ハードウェア、ソフトウェア、ファームウェア、ミドルウェア、マイクロコード、ハードウェア記述言語またはこれらの組合せによって実現することができる。ソフトウェア、ファームウェア、ミドルウェアまたはマイクロコードで実現されるときには、必要なタスクを実行するためのプログラムコードまたはコードセグメントを、記憶媒体などのコンピュータ可読媒体に記憶することができる。必要なタスクを実行するように、プロセッサを適合させることができる。用語「コンピュータ可読媒体」は、限定はされないが、携帯可能なまたは固定された記憶装置、光記憶装置、ｓｉｍカード、他のスマートカード、および命令またはデータを記憶、収容または搬送することができる他のさまざまな他の媒体を含む。
Claims (15)
- 金属含有層および酸化ケイ素層を含む基板から金属含有膜を選択的にエッチングする方法であって、
基板処理チャンバのプラズマ発生領域内にフッ素含有ガスを流入させること、
前記フッ素含有ガスにエネルギーを印加して、前記プラズマ発生領域内で、フッ素ラジカルおよびフッ素イオンを含むプラズマを発生させること、
前記プラズマをフィルタリングして、フッ素イオン濃度よりも高いフッ素ラジカル濃度を有する反応性ガスを提供すること、
前記反応性ガスを、前記基板処理チャンバのガス反応領域内に流入させること、ならびに
前記基板処理チャンバの前記ガス反応領域内で前記基板を前記反応性ガスにさらし、前記反応性ガスが、前記反応性ガスが前記酸化ケイ素層をエッチングするよりも速いエッチング速度で前記金属含有層をエッチングすること
を含む方法。 - 前記フッ素含有ガスがＮＦ３を含む、請求項１に記載の方法。
- 前記金属含有層がタングステンを含む、請求項１に記載の方法。
- 前記金属含有層がハフニウムを含む、請求項１に記載の方法。
- 前記反応性ガスがフッ素イオンを実質的に含まない、請求項１に記載の方法。
- 前記プラズマが、前記基板処理チャンバの前記プラズマ発生領域と前記ガス反応領域との間に配置されたイオン抑制器を使用してフィルタリングされ、前記イオン抑制器が、前記プラズマ発生領域と前記ガス反応領域との間でのフッ素ラジカルの通り抜けを可能にする複数のチャネルを含む、請求項１に記載の方法。
- 誘電体膜のエッチング速度よりも速い金属含有膜のエッチング速度を提供するエッチングプロセスであって、
フッ素含有ガスから、フッ素ラジカルおよびフッ素イオンを含むプラズマを発生させること、
前記プラズマから前記フッ素イオンの一部を除去して、フッ素イオン濃度よりも高いフッ素ラジカル濃度を有する反応性ガスを提供すること、ならびに
金属含有層および誘電体層を含む基板を前記反応性ガスにさらし、前記反応性ガスが、前記反応性ガスが前記誘電体層をエッチングするよりも速いエッチング速度で前記金属含有層をエッチングすること
を含むエッチングプロセス。 - 前記フッ素含有ガスがＮＦ３を含む、請求項７に記載のエッチングプロセス。
- 前記フッ素含有ガスが、ＨｅおよびＡｒのうちの少なくとも一方を含む、請求項７に記載のエッチングプロセス。
- 前記金属含有層が、タングステンを含む、請求項７に記載のエッチングプロセス。
- 前記金属含有層がハフニウムを含む、請求項７に記載のエッチングプロセス。
- 前記反応性ガスがフッ素イオンを実質的に含まない、請求項７に記載のエッチングプロセス。
- 前記フッ素イオンの前記一部がイオン抑制器を使用して前記プラズマから除去され、前記イオン抑制器が、フッ素ラジカルの通り抜けおよびフッ素イオンの抑制を可能にする複数のチャネルを含む、請求項７に記載のエッチングプロセス。
- 前記誘電体層が酸化ケイ素を含む、請求項７に記載のエッチングプロセス。
- 前記誘電体層が窒化ケイ素を含む、請求項７に記載のエッチングプロセス。
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2012
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- 2012-03-13 JP JP2013558123A patent/JP6087845B2/ja active Active
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| JP2023070001A (ja) * | 2020-12-31 | 2023-05-18 | セメス カンパニー，リミテッド | 基板処理方法及び基板処理装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201243941A (en) | 2012-11-01 |
| US20150318186A1 (en) | 2015-11-05 |
| WO2012125654A3 (en) | 2012-12-27 |
| CN103430288A (zh) | 2013-12-04 |
| US9064815B2 (en) | 2015-06-23 |
| JP6087845B2 (ja) | 2017-03-01 |
| KR20140016938A (ko) | 2014-02-10 |
| WO2012125654A2 (en) | 2012-09-20 |
| TWI560768B (en) | 2016-12-01 |
| US20120238103A1 (en) | 2012-09-20 |
| CN103430288B (zh) | 2016-08-24 |
| US10062578B2 (en) | 2018-08-28 |
| KR101901158B1 (ko) | 2018-09-21 |
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