CN106756888B - 一种纳米镀膜设备旋转货架装置 - Google Patents

一种纳米镀膜设备旋转货架装置 Download PDF

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CN106756888B
CN106756888B CN201611077033.1A CN201611077033A CN106756888B CN 106756888 B CN106756888 B CN 106756888B CN 201611077033 A CN201611077033 A CN 201611077033A CN 106756888 B CN106756888 B CN 106756888B
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CN106756888A (zh
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宗坚
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Jiangsu Favored Nanotechnology Co Ltd
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Abstract

本发明一种纳米镀膜设备旋转货架装置,属于真空镀膜技术领域。该装置中,包括反应腔室,所述反应腔室内设置有旋转货架,所述旋转货架的中心轴为中空管结构,且中空管上设置有通孔,反应腔室顶部安装有抽气口,抽气口与中空管在同一轴线上且位于其上方,所述旋转货架底部圆盘上安装内齿圈,旋转电机轴上安装齿轮,工件放置在旋转货架的置物层上。本发明装置在镀膜过程中货架持续旋转,避免出现因各区域化学单体气体密度不均匀造成固定区域的工件涂层厚度不均匀现象;通过每层货架对应中空管上的通孔,可以使进入腔室内的化学单体气体形成沿每层货架径向往通孔位置扩散的趋势,使得从腔壁到中空管区域化学单体密度更加均匀。

Description

一种纳米镀膜设备旋转货架装置
技术领域
本发明属于真空镀膜技术领域,特别涉及一种纳米镀膜设备旋转货架装置。
背景技术
等离子镀膜作为提升材料表面性能有效方法被广泛应用于航空航天、汽车制造、机械重工和五金工具制造等领域。在等离子镀膜过程中,需要将镀膜设备腔室内空气抽出维持低压力状态,同时需要通入工艺气体和化学单体气体用于反应生成聚合物涂层。由于整个等离子镀膜过程中需要持续抽气,且抽气口、进气口、加料口位置是固定的,因此化学单体气体有向抽气口方向扩散的趋势,导致化学单体气体在加料口区域和扩散方向区域的密度相对较大。这就出现了这些区域放置的被镀膜工件表面聚合物涂层厚度较厚而其他区域涂层厚度较薄现象,造成批量生产的质量不一致。
发明内容
本发明的目的是克服上述不足,提供一种纳米镀膜设备旋转货架装置。
本发明为实现上述目的所采用的技术方案如下:
一种纳米镀膜设备旋转货架装置,其特征在于:包括反应腔室,所述反应腔室内设置有旋转货架,所述旋转货架的中心轴为中空管结构,且中空管上设置有通孔,反应腔室顶部安装有抽气口,抽气口与中空管在同一轴线上且位于其上方,抽气口安装有导向套,且导向套内径比中空管外径大,中空管可插入抽气口导向套并相对抽气口转动。所述旋转货架底部圆盘上安装内齿圈,旋转电机轴上安装齿轮,齿轮与内齿圈啮合,通过齿轮带动货架底部圆盘齿圈使货架转动,工件放置在旋转货架的置物层上,真空泵通过真空管路与腔体抽气口连接,进气阀通过进气管路与腔体进气口连接,加料阀通过加料管路与腔体加料口连接,射频电源通过导线与腔体内电极连接。
所述反应腔室的腔容积为50L~3000L,材质为铝合金或不锈钢。
所述旋转货架包括1~20层置物层,材质为铝合金或不锈钢。
所述真空泵的功率为3-50KW,抽速为600-1200m3/h。
所述旋转电机的的功率为30-3000W。
所述射频电源的功率为50-1500W。
本发明的上述技术方案与现有技术相比具有以下优点:
(1)镀膜过程中货架持续旋转,避免出现因各区域化学单体气体密度不均匀造成固定区域的工件涂层厚度不均匀现象。同时,货架转动也有利于将进入腔室内的化学单体气体充分混合均匀。
(2)通过每层货架对应中空管上的通孔,可以使进入腔室内的化学单体气体形成沿每层货架径向往通孔位置扩散的趋势,使得从腔壁到中空管区域化学单体密度更加均匀。
附图说明
图1为一种纳米镀膜设备旋转货架装置结构示意图
图中:1、反应腔室,2、旋转货架,3、真空泵,4、进气阀,5、加料阀,6、旋转电机,7、射频电源,8、工件。
具体实施方式
下面结合附图和具体实施例详细说明本发明,但本发明并不局限于具体实施例。
实施例1
如图1所示:一种纳米镀膜设备旋转货架装置,其特征在于:包括反应腔室,反应腔室的容积为50L,所述反应腔室内设置有旋转货架,旋转货架包括1层置物层,所述旋转货架的中心轴为中空管结构,且中空管上设置有通孔,反应腔室顶部安装有抽气口,抽气口与中空管在同一轴线上且位于其上方,抽气口安装有导向套,且导向套内径比中空管外径大,中空管可插入抽气口导向套并相对抽气口转动,所述旋转货架底部圆盘上安装内齿圈,旋转电机轴上安装齿轮,旋转电机的功率为30W,通过齿轮带动货架底部圆盘齿圈使货架转动,工件放置在旋转货架的置物层上,真空泵通过真空管路与腔体抽气口连接,真空泵的功率为3KW,抽速为600m3/h,进气阀通过进气管路与腔体进气口连接,加料阀通过加料管路与腔体加料口连接,射频电源通过导线与腔体内电极连接,射频电源的功率为50W。
实施例2
如图1所示:一种纳米镀膜设备旋转货架装置,其特征在于:包括反应腔室,反应腔室的容积为500L,所述反应腔室内设置有旋转货架,旋转货架包括10层置物层,所述旋转货架的中心轴为中空管结构,且中空管上设置有通孔,反应腔室顶部安装有抽气口,抽气口与中空管在同一轴线上且位于其上方,抽气口安装有导向套,且导向套内径比中空管外径大,中空管可插入抽气口导向套并相对抽气口转动,所述旋转货架底部圆盘上安装内齿圈,旋转电机轴上安装齿轮,旋转电机的的功率为300W,通过齿轮带动货架底部圆盘齿圈使货架转动,工件放置在旋转货架的置物层上,真空泵通过真空管路与腔体抽气口连接,真空泵的功率为12KW,抽速为800m3/h,进气阀通过进气管路与腔体进气口连接,加料阀通过加料管路与腔体加料口连接,射频电源通过导线与腔体内电极连接,射频电源的功率为300W。
实施例3
如图1所示:一种纳米镀膜设备旋转货架装置,其特征在于:包括反应腔室,反应腔室的容积为1800L,所述反应腔室内设置有旋转货架,旋转货架包括15层置物层,所述旋转货架的中心轴为中空管结构,且中空管上设置有通孔,反应腔室顶部安装有抽气口,抽气口与中空管在同一轴线上且位于其上方,抽气口安装有导向套,且导向套内径比中空管外径大,中空管可插入抽气口导向套并相对抽气口转动,所述旋转货架底部圆盘上安装内齿圈,旋转电机轴上安装齿轮,旋转电机的的功率为1500W,通过齿轮带动货架底部圆盘齿圈使货架转动,工件放置在旋转货架的置物层上,真空泵通过真空管路与腔体抽气口连接,真空泵的功率为30KW,抽速为1100m3/h,进气阀通过进气管路与腔体进气口连接,加料阀通过加料管路与腔体加料口连接,射频电源通过导线与腔体内电极连接,射频电源的功率为1000W。
工件制作流程如下:首先将镀膜工件放置于镀膜设备腔室内的旋转货架的置物层上,真空泵从抽气口将腔室内空气抽出使腔室内压力降低,然后通过进气阀从进气口向腔室内通入工艺气体,再通过加料阀从加料口向腔室内添加化学单体气体,旋转电机带动货架旋转,由射频电源放电,引发化学单体气体发生聚合并沉积在工件表面形成聚合物涂层。
实施例4
如图1所示:一种纳米镀膜设备旋转货架装置,其特征在于:包括反应腔室,反应腔室的容积为3000L,所述反应腔室内设置有旋转货架,旋转货架包括20层置物层,所述旋转货架的中心轴为中空管结构,且中空管上设置有通孔,反应腔室顶部安装有抽气口,抽气口与中空管在同一轴线上且位于其上方,抽气口安装有导向套,且导向套内径比中空管外径大,中空管可插入抽气口导向套并相对抽气口转动,所述旋转货架底部圆盘上安装内齿圈,旋转电机轴上安装齿轮,旋转电机的的功率为3000W,通过齿轮带动货架底部圆盘齿圈使货架转动,工件放置在旋转货架的置物层上,真空泵通过真空管路与腔体抽气口连接,真空泵的功率为50KW,抽速为1200m3/h,进气阀通过进气管路与腔体进气口连接,加料阀通过加料管路与腔体加料口连接,射频电源通过导线与腔体内电极连接,射频电源的功率为1500W。

Claims (6)

1.一种纳米镀膜设备旋转货架装置,其特征在于:包括反应腔室(1),所述反应腔室(1)内设置有旋转货架(2),所述旋转货架(2)的中心轴为中空管结构,且中空管上设置有通孔,反应腔室顶部安装有抽气口,抽气口与中空管在同一轴线上且位于其上方,抽气口安装有导向套,且导向套内径比中空管外径大,所述旋转货架(2)底部圆盘上安装内齿圈,旋转电机(6)轴上安装齿轮,工件(8)放置在旋转货架(2)的置物层上,真空泵(3)通过真空管路与反应腔室(1)腔体抽气口连接,进气阀(4)通过进气管路与反应腔室(1)腔体进气口连接,加料阀(5)通过加料管路与反应腔室(1)腔体加料口连接,射频电源(7)通过导线与反应腔室(1)腔体内电极连接。
2.根据权利要求1所述的一种纳米镀膜设备旋转货架装置,其特征在于:所述反应腔室(1)的腔容积为50L~3000L,材质为铝合金或不锈钢。
3.根据权利要求1所述的一种纳米镀膜设备旋转货架装置,其特征在于:所述旋转货架(2)包括1~20层置物层,材质为铝合金或不锈钢。
4.根据权利要求1所述的一种纳米镀膜设备旋转货架装置,其特征在于:所述真空泵(3)的功率为3-50KW,抽速为600-1200m3/h。
5.根据权利要求1所述的一种纳米镀膜设备旋转货架装置,其特征在于:所述旋转电机(6)的功率为30-3000W。
6.根据权利要求1所述的一种纳米镀膜设备旋转货架装置,其特征在于:所述射频电源(7)的功率为50-1500W。
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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106756888B (zh) 2016-11-30 2018-07-13 江苏菲沃泰纳米科技有限公司 一种纳米镀膜设备旋转货架装置
US11339477B2 (en) 2016-11-30 2022-05-24 Jiangsu Favored Nanotechnology Co., LTD Plasma polymerization coating apparatus and process
CN112538617B (zh) * 2019-09-20 2022-02-22 江苏菲沃泰纳米科技股份有限公司 镀膜设备
US11555247B2 (en) 2019-09-20 2023-01-17 Jiangsu Favored Nanotechnology Co., Ltd. Coating apparatus and movable electrode arrangement, movable support arrangement, and application thereof
CN110684962B (zh) * 2019-10-21 2022-03-29 江苏菲沃泰纳米科技股份有限公司 用于镀膜设备的气流导散装置及其应用
US11938512B2 (en) * 2019-11-04 2024-03-26 Hzo, Inc. In situ polymerization of para-xylene for production of parylene F-like coating
US11898248B2 (en) * 2019-12-18 2024-02-13 Jiangsu Favored Nanotechnology Co., Ltd. Coating apparatus and coating method
TWI766488B (zh) 2020-12-19 2022-06-01 逢甲大學 有機高分子薄膜及其製作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2848874Y (zh) * 2005-11-04 2006-12-20 夏建业 用于真空镀膜的旋转式镀件架
CN101818326A (zh) * 2009-02-26 2010-09-01 鸿富锦精密工业(深圳)有限公司 溅镀装置
CN203904442U (zh) * 2014-06-30 2014-10-29 江苏安阳文化创意产业园股份有限公司 镀膜机工件夹具放置架
CN104131261A (zh) * 2014-07-08 2014-11-05 东莞市汇成真空科技有限公司 一种随工件运动的在位动态监控膜厚的真空光学镀膜机
CN206219660U (zh) * 2016-11-30 2017-06-06 无锡荣坚五金工具有限公司 一种纳米镀膜设备旋转货架装置

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5938375A (ja) 1982-08-26 1984-03-02 Canon Inc プラズマcvd装置
JPS59211220A (ja) 1983-05-17 1984-11-30 Shimadzu Corp プラズマcvd装置
JPS6043488A (ja) 1983-08-22 1985-03-08 Toshiba Corp 薄膜製造装置
JPS61110768A (ja) 1984-11-05 1986-05-29 Sharp Corp アモルフアスシリコン感光体製造用装置
US4632842A (en) 1985-06-20 1986-12-30 Atrium Medical Corporation Glow discharge process for producing implantable devices
DE3717985A1 (de) 1986-05-28 1987-12-03 Minolta Camera Kk Elektrochrome vorrichtung
KR910003742B1 (ko) 1986-09-09 1991-06-10 세미콘덕터 에너지 라보라터리 캄파니 리미티드 Cvd장치
US4926793A (en) * 1986-12-15 1990-05-22 Shin-Etsu Handotai Co., Ltd. Method of forming thin film and apparatus therefor
JP2653083B2 (ja) 1988-02-10 1997-09-10 富士ゼロックス株式会社 プラズマcvd装置
US4996077A (en) 1988-10-07 1991-02-26 Texas Instruments Incorporated Distributed ECR remote plasma processing and apparatus
US5279669A (en) 1991-12-13 1994-01-18 International Business Machines Corporation Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions
US5286297A (en) 1992-06-24 1994-02-15 Texas Instruments Incorporated Multi-electrode plasma processing apparatus
US5591268A (en) 1994-10-14 1997-01-07 Fujitsu Limited Plasma process with radicals
US5653811A (en) 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
ES2188006T3 (es) 1997-09-29 2003-06-16 Unaxis Trading Ag Instalacion de recubrimiento a vacio y disposicion de acoplamiento y procedimiento para la fabricacion de piezas de trabajo.
US6582578B1 (en) * 1999-04-08 2003-06-24 Applied Materials, Inc. Method and associated apparatus for tilting a substrate upon entry for metal deposition
TW514301U (en) * 2001-02-13 2002-12-11 Mosel Vitelic Inc Block plate rotary installation
GB0207350D0 (en) * 2002-03-28 2002-05-08 Univ Sheffield Surface
US20050211171A1 (en) 2004-03-26 2005-09-29 Applied Materials, Inc. Chemical vapor deposition plasma reactor having an ion shower grid
JP2006049817A (ja) * 2004-07-07 2006-02-16 Showa Denko Kk プラズマ処理方法およびプラズマエッチング方法
KR100672820B1 (ko) 2004-11-12 2007-01-22 삼성전자주식회사 플라즈마를 사용한 피처리체의 처리 방법
JP4475136B2 (ja) * 2005-02-18 2010-06-09 東京エレクトロン株式会社 処理システム、前処理装置及び記憶媒体
JP5058511B2 (ja) 2006-04-28 2012-10-24 キヤノン株式会社 堆積膜形成装置
JP5074741B2 (ja) 2006-11-10 2012-11-14 株式会社日立ハイテクノロジーズ 真空処理装置
US20080173238A1 (en) 2006-12-12 2008-07-24 Hitachi Kokusai Electric Inc. Substrate processing apparatus, method of manufacturing semiconductor device, and reaction vessel
EP1936656A1 (en) * 2006-12-21 2008-06-25 Nederlandse Organisatie voor Toegepast-Natuuurwetenschappelijk Onderzoek TNO Plasma generator and method for cleaning an object
US8133360B2 (en) * 2007-12-20 2012-03-13 Applied Materials, Inc. Prediction and compensation of erosion in a magnetron sputtering target
CN102024658B (zh) 2009-09-22 2012-09-05 北京北方微电子基地设备工艺研究中心有限责任公司 一种等离子体处理设备及方法
CN102296284B (zh) * 2010-06-22 2014-04-30 鸿富锦精密工业(深圳)有限公司 镀膜装置
TWI562204B (en) 2010-10-26 2016-12-11 Hitachi Int Electric Inc Substrate processing apparatus, semiconductor device manufacturing method and computer-readable recording medium
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
WO2012139006A2 (en) * 2011-04-07 2012-10-11 Veeco Instruments Inc. Metal-organic vapor phase epitaxy system and process
JP2013028851A (ja) 2011-07-29 2013-02-07 Kobe Steel Ltd プラズマcvd装置
KR20130060544A (ko) * 2011-11-30 2013-06-10 현대자동차주식회사 나노멀티레이어 코팅층 형성방법 및 형성장치
US20130168352A1 (en) 2011-12-28 2013-07-04 Andreas Fischer Methods and apparatuses for controlling plasma properties by controlling conductance between sub-chambers of a plasma processing chamber
JP2014125651A (ja) 2012-12-26 2014-07-07 Kobe Steel Ltd インライン式プラズマcvd装置
JP6147168B2 (ja) 2013-11-18 2017-06-14 株式会社神戸製鋼所 成膜装置
JP6307984B2 (ja) 2014-03-31 2018-04-11 東京エレクトロン株式会社 基板処理装置
CN105339522B (zh) * 2014-06-12 2018-08-10 深圳市大富精工有限公司 一种真空镀膜设备以及真空镀膜的方法
JP6330630B2 (ja) 2014-11-13 2018-05-30 東京エレクトロン株式会社 成膜装置
CN204497191U (zh) 2015-04-30 2015-07-22 中国计量学院 一种带防静电涂层的考夫曼电源
CN105949836B (zh) 2016-05-13 2017-06-16 无锡荣坚五金工具有限公司 一种栅控等离子体引发气相聚合表面涂层的装置及方法
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US11339477B2 (en) * 2016-11-30 2022-05-24 Jiangsu Favored Nanotechnology Co., LTD Plasma polymerization coating apparatus and process
CN206304929U (zh) 2016-11-30 2017-07-07 无锡荣坚五金工具有限公司 一种等离子体聚合涂层装置
CN206359611U (zh) 2016-11-30 2017-07-28 无锡荣坚五金工具有限公司 一种纳米镀膜设备行星回转货架装置
CN106756888B (zh) 2016-11-30 2018-07-13 江苏菲沃泰纳米科技有限公司 一种纳米镀膜设备旋转货架装置
CN106637140B (zh) 2016-11-30 2018-08-10 江苏菲沃泰纳米科技有限公司 一种纳米镀膜设备行星回转货架装置
KR20210005072A (ko) * 2018-05-04 2021-01-13 지앙수 페이보레드 나노테크놀로지 컴퍼니., 리미티드 전기 디바이스에 대한 나노-코팅 보호 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2848874Y (zh) * 2005-11-04 2006-12-20 夏建业 用于真空镀膜的旋转式镀件架
CN101818326A (zh) * 2009-02-26 2010-09-01 鸿富锦精密工业(深圳)有限公司 溅镀装置
CN203904442U (zh) * 2014-06-30 2014-10-29 江苏安阳文化创意产业园股份有限公司 镀膜机工件夹具放置架
CN104131261A (zh) * 2014-07-08 2014-11-05 东莞市汇成真空科技有限公司 一种随工件运动的在位动态监控膜厚的真空光学镀膜机
CN206219660U (zh) * 2016-11-30 2017-06-06 无锡荣坚五金工具有限公司 一种纳米镀膜设备旋转货架装置

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