CN102324462A - 基于纳米线的透明导体及其应用 - Google Patents
基于纳米线的透明导体及其应用 Download PDFInfo
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- CN102324462A CN102324462A CN2011102294881A CN201110229488A CN102324462A CN 102324462 A CN102324462 A CN 102324462A CN 2011102294881 A CN2011102294881 A CN 2011102294881A CN 201110229488 A CN201110229488 A CN 201110229488A CN 102324462 A CN102324462 A CN 102324462A
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Classifications
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- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
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Abstract
Description
在浸入之前 | 10秒. | 20秒. | 60秒. | |
%T | 89.1 | 89.3 | 90.0 | 91.3 |
%H | 3.02 | 2.36 | 1.74 | 0.53 |
Ohm/Sq. | 45 | 112 | 1700 | 开放电路 |
在浸入之前 | 1分钟. | 11分钟. | 35分钟. | 66分钟. | |
%T | 89.5 | 89.4 | 89.2 | 88.7 | 88.5 |
%H | 2.80 | 2.82 | 2.81 | 2.66 | 2.56 |
Ohm/Sq. | 51 | 47 | 58 | 173 | 193 |
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US60/911,058 | 2007-04-10 | ||
US91323107P | 2007-04-20 | 2007-04-20 | |
US60/913,231 | 2007-04-20 | ||
CN2007800456614A CN101589473B (zh) | 2006-10-12 | 2007-10-12 | 基于纳米线的透明导体及其应用 |
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SG180278A1 (en) | 2012-05-30 |
US20210028321A1 (en) | 2021-01-28 |
KR20090112626A (ko) | 2009-10-28 |
CN101589473A (zh) | 2009-11-25 |
SG151667A1 (en) | 2009-05-29 |
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CN101589473B (zh) | 2011-10-05 |
SG156217A1 (en) | 2009-11-26 |
CN102324462B (zh) | 2015-07-01 |
SG10201502808UA (en) | 2015-05-28 |
JP6130882B2 (ja) | 2017-05-17 |
SG175612A1 (en) | 2011-11-28 |
TW200839794A (en) | 2008-10-01 |
EP2082436B1 (en) | 2019-08-28 |
JP5785226B2 (ja) | 2015-09-24 |
EP3595016A1 (en) | 2020-01-15 |
JP5409369B2 (ja) | 2014-02-05 |
US8760606B2 (en) | 2014-06-24 |
US20080143906A1 (en) | 2008-06-19 |
US20110088770A1 (en) | 2011-04-21 |
US10749048B2 (en) | 2020-08-18 |
US20140338735A1 (en) | 2014-11-20 |
TW201440080A (zh) | 2014-10-16 |
TWI426531B (zh) | 2014-02-11 |
US8094247B2 (en) | 2012-01-10 |
JP2016012726A (ja) | 2016-01-21 |
JP2014003298A (ja) | 2014-01-09 |
JP2010507199A (ja) | 2010-03-04 |
EP2082436A2 (en) | 2009-07-29 |
KR101545219B1 (ko) | 2015-08-18 |
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