CN115616803A - 电子装置 - Google Patents

电子装置 Download PDF

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Publication number
CN115616803A
CN115616803A CN202211338922.4A CN202211338922A CN115616803A CN 115616803 A CN115616803 A CN 115616803A CN 202211338922 A CN202211338922 A CN 202211338922A CN 115616803 A CN115616803 A CN 115616803A
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China
Prior art keywords
layer
substrate
semiconductor layer
gate
electronic device
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CN202211338922.4A
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English (en)
Inventor
高振宽
杨清喆
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Innolux Corp
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Innolux Display Corp
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Priority to CN202211338922.4A priority Critical patent/CN115616803A/zh
Publication of CN115616803A publication Critical patent/CN115616803A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G02F1/136204—Arrangements to prevent high voltage or static electricity failures
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Abstract

本发明公开了一种电子装置，其包括第一基板以及静电防护元件。第一基板具有周边区，静电防护元件设置于第一基板的周边区上。静电防护元件包括第一半导体层、第二半导体层、第一闸极与第二闸极，第一半导体层与第二半导体层彼此分离，第一闸极与第二闸极彼此分离，第一闸极与第一半导体层电连接，第二闸极与第二半导体层电连接。

Description

电子装置
本申请是申请日为2018年03月14日、申请号为201810210868.2、发明名称为“显示设备及其制造方法”的发明专利申请的分案申请。
技术领域
本发明涉及一种显示设备以及其制造方法，特别是涉及一种具有用以遮蔽静电防护元件的遮蔽层的显示设备以及其制造方法。
背景技术
显示设备是由两片基板以及设置在两片基板之间的多个膜层与各式电子元件所构成，以达到显示画面的功能。由于显示器具有外型轻薄、耗电量少以及无辐射污染等特性，因此已被广泛地应用在各式携带式或穿戴式电子产品例如笔记本计算机(notebook)、智能型手机(smart phone)、手表以及车用显示器等，以更方便的传递与显示信息。
而在部分类型的显示设备的制作工艺中，会通过照射光线的方式驱使显示设备中的液晶混合材料进行聚合反应，举例而言，在液晶显示设备(liquid crystal display,LCD)中，为了提供广视角显示效果，会通过照射紫外光并对显示设备通电的方式对液晶分子进行配向。然而，在照光的过程中，显示设备中的部分电子元件会因为照射到光线而有暂时性或是永久性的影响，例如影响晶体管的阻值，使得在进行需照光与通电的反应(例如液晶配向)时，所提供的电压(例如配向电压)会因照光而被影响，导致液晶配向不良，进而造成显示设备的显示质量与合格率下降。
发明内容
在一实施例中，本发明提供了一种电子装置，其包括第一基板以及静电防护元件。第一基板具有周边区，静电防护元件设置于第一基板的周边区上。静电防护元件包括第一半导体层、第二半导体层、第一闸极与第二闸极，第一半导体层与第二半导体层彼此分离，第一闸极与第二闸极彼此分离，第一闸极与第一半导体层电连接，第二闸极与第二半导体层电连接。
附图说明
图1所示为本发明一实施例的显示设备的俯视示意图。
图2所示为本发明一实施例的显示设备的部分俯视示意图。
图3A所示为本发明第一实施例的静电防护元件的电路图。
图3B所示为本发明第一实施例的静电防护元件与遮蔽层的俯视示意图。
图4所示为沿着图3B中剖线A-A’的剖面示意图。
图5所示为本发明一实施例的显示设备的剖面示意图。
图6所示为本发明第二实施例的显示设备的剖面示意图。
图7所示为本发明第三实施例的显示设备的剖面示意图。
图8所示为本发明第四实施例的显示设备的剖面示意图。
图9所示为本发明第五实施例的显示设备的剖面示意图。
图10所示为本发明第六实施例的静电防护元件与遮蔽层的俯视示意图。
图11所示为本发明第七实施例的显示设备的剖面示意图。
图12到图15所示为本发明一实施例的显示设备的制造方法的剖面示意图。
图16所示为本发明一实施例的显示设备的制造方法的流程图。
附图标记说明：100、200、300、400、500、600、700-显示设备；110-阵列基板；120-静电防护元件；130、230、330、430、530、630、730-遮蔽层；140-对向基板；150-导电连接结构；632-第一遮蔽层；634-第二遮蔽层；1010～1040-步骤；AL-配向层；AR-显示区；BA-测试电路；BM-对向遮蔽层；CL-导电层；CS-导电结构；D-俯视方向；D1-第一汲极；D2-第二汲极；DL-数据线；G1-第一闸极；G2-第二闸极；IL-绝缘层；LC-液晶层；LCM-液晶分子；M1-第一金属层；M2-第二金属层；M3-第三金属层；PA-连接垫；PR-周边区；RM-反应性单体；S1-第一源极；S2-第二源极；SB1-第一基板；SB2-第二基板；SL-扫描线；SM-半导体层；SM1-第一半导体层；SM2-第二半导体层；SP1、SP2-间距；T1-第一晶体管；T2-第二晶体管；UV-光线；V-电压。
具体实施方式
为使本领域技术人员能更进一步了解本发明，以下特列举本发明的实施例，并配合附图详细说明本发明的构成内容及所欲达成的功效。须注意的是，附图均为简化的示意图，因此，仅显示与本发明有关的元件与组合关系，以对本发明的基本架构或实施方法提供更清楚的描述，而实际的元件与布局可能更为复杂。另外，为了方便说明，本发明的各附图中所示的元件并非以实际实施的数目、形状、尺寸做等比例绘制，其详细的比例可依照设计的需求进行调整。
另外，当在本说明书中使用术语"包括(含)"和/或"具有"时，其指定了所述特征、区域、步骤、操作和/或元件的存在，但并不排除一个或多个其他特征、区域、步骤、操作、元件和/或其组合的存在或增加。当诸如层或区域的元件被称为在另一元件(或其变型)"上"或延伸到另一元件"上"时，它可以直接在另一元件上或直接延伸到另一元件上，或者两者之间还可以存在插入的元件。另一方面，当称一元件"直接"在另一元件(或其变型)上或者"直接"延伸到另一元件上时，两者间不存在插入元件。并且，当一元件被称作"电连接"或"耦接"到另一元件(或其变型)时，它可以直接连接到另一元件或通过一或多个元件间接地连接到另一元件。
请参考图1、图2、图3A、图3B、图4与图5，图1所示为本发明一实施例的显示设备的俯视示意图，图2所示为本发明一实施例的显示设备的部分俯视示意图，图3A所示为本发明第一实施例的静电防护元件的电路图，图3B所示为本发明第一实施例的静电防护元件与遮蔽层的俯视示意图，图4所示为沿着图3B中剖线A-A’的剖面示意图，图5所示为本发明一实施例的显示设备的剖面示意图，其中图2绘示图1中显示区AR的一角落部分的电子元件与结构，图3A与图3B绘示图2的一个静电防护元件，图5绘示图2中的多个静电防护元件的剖面图。本文所述的显示设备以液晶显示设备(liquid crystal display,LCD)为例，但本发明的显示设备不以此为限。如图1、图2、图3A、图3B、图4与图5所示，本实施例的显示设备100包括阵列基板110，并可选择性的包括对向基板140、液晶层LC与两层配向层AL。阵列基板110包括用以承载电子元件、电路结构或膜层的第一基板SB1，而第一基板SB1具有显示区AR以及位于显示区AR外围的周边区PR，其中在第一基板SB1的显示区AR上设置有用以显示画面的膜层与电子元件，例如像素电极、晶体管、扫描线与数据线等，而在第一基板SB1的周边区PR上则设置有例如用以驱动显示区AR内部电子元件的驱动电路(例如集成闸极驱动电路(integrated gate driver,IGD))、连接垫、集成电路(integrated circuit)与信号走线等电子元件，但不以此为限。须说明的是，为了彰显本发明的内容，图1的显示区AR仅绘示其区域范围而并未绘示其内部元件，并省略部分周边区PR中的元件，图2在显示区AR中仅绘示数据线DL与扫描线SL，但本发明不以此为限。在本实施例中，周边区PR环绕包围显示区AR，但不以此为限。在变化实施例中，周边区PR可设置在显示区AR至少一侧。本实施例的对向基板140与阵列基板110相对设置，并包括第二基板SB2，液晶层LC设置在阵列基板110与对向基板140之间，并包括多个液晶分子。配向层AL设置在阵列基板110与对向基板140之间，用以让液晶分子达到配向，其中配向层AL可由反应性单体(monomer)所形成，举例来说，液晶层LC还可选择性的包括反应性单体，而反应性单体可在显示设备100的制造过程中的配向工艺反应而形成配向层AL，但配向层AL的形成方式不以此为限，须说明的是，若液晶层LC的反应性单体在配向工艺中反应完全，则显示设备100完成制造时，液晶层LC中可不具有反应性单体。本实施例的配向层AL可分别设置在液晶层LC与第一基板SB1之间以及设置在液晶层LC与第二基板SB2之间，但不以此为限。于本实施例中，反应性单体可通过照光的方式反应而形成配向层AL，也就是本实施例的反应性单体可具有光反应性，而所照射的光线举例可为紫外光，但不限于此。另外，第一基板SB1与第二基板SB2可为硬质基板例如玻璃基板、塑料基板、石英基板或蓝宝石基板，也可为例如包含聚亚酰胺材料(polyimide,PI)或聚对苯二甲酸乙二酯材料(polyethylene terephthalate,PET)的可挠式基板，但不以此为限。
如图1、图2、图3A、图3B与图4所示，在本发明中，为了对显示设备100进行静电防护，显示设备100的阵列基板110包括至少一静电防护元件120以及遮蔽层130。静电防护元件120设置在第一基板SB1上，并位于周边区PR内，并且，静电防护元件120可耦接于设置在第一基板SB1上的电子元件，而此电子元件可位于显示区AR或周边区PR内，举例而言，如图2所示，静电防护元件120可于耦接设置在显示区AR内的数据线DL或扫描线SL，且在图2中，数据线DL与扫描线SL还耦接于连接垫PA，以连接相应的电路，但不以此为限。在本实施例中，静电防护元件120举例可包括双向二极管，而双向二极管可由第一晶体管T1与第二晶体管T2所形成。详细而言，阵列基板110还可包括第一金属层M1、绝缘层IL、第二金属层M2以及半导体层SM，在本实施例中，第一金属层M1设置在第一基板SB1上，绝缘层IL设置在第一金属层M1与第一基板SB1上，第二金属层M2设置在第一金属层M1上并位于绝缘层IL中，半导体层SM设置在第二金属层M2上并位于绝缘层IL中，其中半导体层SM包括第一半导体层SM1与第二半导体层SM2，且第一半导体层SM1与第二半导体层SM2彼此电性绝缘。第一晶体管T1的第一闸极G1与第二晶体管T2的第二闸极G2由第一金属层M1所形成，也就是第一金属层M1具有包括第一闸极G1与第二闸极G2的闸极电极，而第一闸极G1与第二闸极G2位于第一基板SB1与半导体层SM之间并彼此电性绝缘，且第一闸极G1与第一半导体层SM1电性连接，第二闸极G2与第二半导体层SM2电性连接，而第一晶体管T1的第一源极S1与第一汲极D1与第二晶体管T2的第二源极S2与第二汲极D2由第二金属层M2所形成，也就是第二金属层M2具有包括第一源极S1与第二源极S2的源极电极以及包括第一汲极D1与第二汲极D2的汲极电极，以使第一晶体管T1与第二晶体管T2形成为底闸型薄膜晶体管(bottom gate transistor)，但不以此为限。在图3A与图3B中，本实施例的第一源极S1、第一半导体层SM1、第一闸极G1以及第二汲极D2彼此电性连接，第二源极S2第二半导体层SM2、第二闸极G2以及第一汲极D1彼此电性连接，以形成双向二极管，但双向二极管的连接方式不以此为限，而静电防护元件120也可包括其他具有静电防护功能的元件。半导体层SM可例如包括金属氧化物、非晶硅或多晶硅。此外，阵列基板110还可选择性地包括更多的导电层、绝缘层或是其他需要的膜层，举例而言，如图3B所示，阵列基板110另包括两个导电层CL，导电层CL可为金属导电层、透明导电层或其他适合的导电层，用以分别将第一晶体管T1的第一闸极G1与第一晶体管T1的第一源极S1电连接并将第二晶体管T2的第二闸极G2与第二晶体管T2的第二源极S2电连接。在另一实施例中，静电防护元件120的电阻值可大于或等于1M欧姆(OhmΩ)，例如其电阻值范围可为1M～100M欧姆，其中1M欧姆等于1000000欧姆，但静电防护元件120的阻值范围不受此限。
另外，在图1与图2中，阵列基板110还可选择性的包括测试电路(short bar)BA，设置在周边区PR内的第一基板SB1上，并耦接于静电防护元件120，藉此，静电荷可通过静电防护元件120释放到被提供共同电压(common voltage)的一元件中，例如共同电极(commonelectrode)，而本实施例的阵列基板110具有四个测试电路BA，分别设置在显示区AR的四侧，并分别以导电结构CS彼此电连接。因此，如图2与图3A所示，在静电防护元件120进行静电防护的过程中，若第一闸极接收到过大的负静电或是第二闸极接收到过大的正静电，静电防护元件120的第二晶体管T2会开启而产生如图3A中的实线箭头流向的电流，若第一闸极接收到过大的正静电或是第二闸极接收到过大的负静电，静电防护元件120的第一晶体管T1会开启而产生如图3A中的虚线箭头流向的电流，藉此将静电传导至测试电路BA以释放静电。此外，测试电路BA举例可由透明导电层所形成，但不以此为限。
如图1、图2、图3A、图3B与图4所示，遮蔽层130设置在周边区PR内的第一基板SB1上，并在第一基板SB1的俯视方向D上重迭于静电防护元件120的至少一部分，在本实施例中，遮蔽层130设置在静电防护元件120上，并可为图案化膜层，但不以此为限。在本发明中，遮蔽层130可阻挡用以配向的光线(例如用以形成配向层AL的光线)，以减弱光线对于静电防护元件120的影响。须说明的是，本文中的"一膜层阻挡特定光线"表示此膜层可防止或减弱特定波段光线穿透，因此，遮蔽层130可具有吸收、反射或散射特定波段光线的特性。遮蔽层130可包括间隔物材料、光阻材料、有机材料与金属材料的其中至少一种或其他适合的材料，而遮蔽层130可为单层结构或多层结构。在本实施例中，遮蔽层130可为单层结构，其中间隔物材料可包括光阻间隔物(photo-spacer resist,PS)材料或黑色光阻间隔物(blackphoto-spacer resist,BPS)材料，光阻材料可包括彩色光阻材料或是其他光阻，彩色光阻材料例如可包括红色光阻材料与绿色光阻材料的其中至少一种，金属材料举例可包含铬，但都不以此为限。
在本实施例中，用以配向的光线的波长范围可从254纳米(nm)到400纳米，也就是紫外光，因此，遮蔽层130可包括可吸收波长范围为254纳米到400纳米的光线的材料，或是包括具有反射或散射此波长范围光线的材料，以使得遮蔽层130对于波长范围为254纳米到400纳米的光的穿透率小于或等于80％。此外，遮蔽层130还可允许位于上述波长范围之外的光线穿透，但不限于此。另外，为了达到良好的光线阻挡效果，遮蔽层130的厚度可例如为0.1微米(μm)到10微米。举例来说，若遮蔽层130包括光阻材料或有机材料时，遮蔽层130的厚度可例如为约1微米到约10微米或为约1微米到约5微米，若遮蔽层130包括金属材料时，遮蔽层130的厚度可例如为约0.1微米到约1微米，但不以此为限。遮蔽层130的厚度可依据液晶层间隙(cell gap)的大小而对应设计。
一般而言，显示设备100的制造过程中，会在阵列基板110与对向基板140组立后进行配向工艺，而在配向工艺中，会先对阵列基板110与对向基板140施以电压，例如对阵列基板110中的电子元件(如显示区AR中的像素电极)提供电压以及对对向基板140的共同电极提供电压，使液晶分子朝预定方向倾斜而产生预倾角，接着，再对液晶层LC照射用以配向的光线，将液晶层LC中的反应性单体聚合在阵列基板110与对向基板140的表面上，进而形成配向层AL，使得液晶分子可透过配向层AL以预定的预倾角与方位角固定，进而达到高对比度与广视角的显示。举例而言，可使液晶分子朝向多个方向配向以形成多区域(multi-domain)配向型的液晶显示设备，例如为多区域垂直配向型(multi-domain verticalalignment,MVA)液晶显示设备，但不以此为限。然而，在传统的显示设备中，由于静电防护元件并不具有遮蔽层130，因此在形成配向层时，光线会直接照射或经由膜层反射到周边区的静电防护元件，使得静电防护元件的电性受到暂时性或永久性的影响，例如静电防护元件的半导体层因为此光线的照射而改变电阻。由于静电防护元件120会与显示区AR中的电子元件电连接(电子元件例如像素电极、晶体管、扫描线与数据线等)，因此，在进行配向工艺时，显示区AR中的电子元件所接收到的电压会因为静电防护元件120的电性改变而受到影响，使得液晶分子的倾斜角或方位角过大或过小，导致显示设备的显示质量受到影响，例如产生亮度或色度不均(mura)的现象或显示光线的穿透率下降。相反地，在本发明中，由于遮蔽层130在第一基板SB1的俯视方向D上重迭于静电防护元件120，且遮蔽层130具有阻挡用以配向的光线的特性，因此，可减少此光线对于静电防护元件120的影响，以达到预定的配向，进而提升显示设备100的显示质量。在本实施例中，由于静电防护元件120为具有半导体层SM的双向二极管，因此，为了降低此光线对于半导体层SM的影响，遮蔽层130在俯视方向D上至少遮蔽(重迭于)静电防护元件120的半导体层SM，而在本实施例中，遮蔽层130完整的遮蔽静电防护元件120，也就是可同时遮蔽彼此分离的第一半导体层SM1与第二半导体层SM2，但不以此为限。须说明的是，本文所述的"一膜层(或多个膜层)在俯视方向D上遮蔽一元件"表示此元件在俯视方向D上位于此(此些)膜层内。另外，为了提升遮蔽效果，静电防护元件120的半导体层SM可设置在闸极电极(包括有第一闸极G1与第二闸极G2)与遮蔽层130之间，且闸极、源极与汲极在俯视方向D上遮蔽半导体层SM，使得半导体层SM的一侧由遮蔽层130所遮蔽，另一侧由闸极电极、源极电极与汲极电极所遮蔽，也就是说，图4中的遮蔽层130阻挡由上而下的光线，第一闸极G1、第一源极S1与第一汲极D1阻挡由下而上的光线，但不以此为限。在另一实施例中，第一晶体管T1与第二晶体管T2的源极电极与汲极电极位于半导体层SM与遮蔽层130之间，因此，半导体层SM的一侧由遮蔽层130所遮蔽(遮蔽层130完全遮蔽半导体层SM)或是由遮蔽层130、源极电极与汲极电极所遮蔽(遮蔽层130、源极电极与汲极电极都遮蔽部分的半导体层SM)，而另一侧由闸极电极所遮蔽，其中第一半导体层SM1与第二半导体层SM2在俯视方向D上分别位于第一闸极G1与第二闸极G2内。此外，本实施例的遮蔽层130的边缘与半导体层SM的边缘之间可具有大于或等于5微米的间距SP1，以阻挡斜向入射的光线，藉此达到良好的遮蔽效果。
另一方面，如图4与图5所示，在本实施例中，显示设备100举例为彩色滤光层(color filter)位于对向基板140的架构，而彩色滤光层中的红色光阻材料与绿色光阻材料会阻挡紫外光，因此在进行配向工艺时，用以配向的光线会由阵列基板110的一侧照射入显示设备100内，也就是说，在图4与图5中，光线会由下而上的射入显示设备100中。而为了使位于周边区PR的液晶混和物中的配向单体材料反应完全，本实施例的遮蔽层130之间具有一大于或等于3微米的间距SP2，以允许光线可透过遮蔽层130之间的间隙照射液晶混和物，且各遮蔽层130可遮蔽一个静电防护元件120，但不以此为限。此外，显示设备100中还可依据需求包括其他膜层，举例来说，显示设备100的对向基板140还可包括对向遮蔽层BM，用以分隔像素与遮蔽周边区PR内的电路结构，并遮蔽周边区PR的结构，但不以此为限，例如还可包括偏振片(polarizer)。另外，由于本实施例的显示设备100可为多区域垂直配向型液晶显示设备，故显示设备100可为垂直配向(vertical alignment)类型，但不限制在垂直配向的液晶技术类型。
在另一实施例中，彩色滤光层可设置于阵列基板110中，也就是显示设备100可为COA(color filter on array)架构的显示设备，且对向基板140不具有彩色滤光层。于此架构下，用以配向的光线会由对向基板140的一侧照射入显示设备100内(即图4中由上而下的照射)，以进行配向工艺，而在此情况下，阵列基板110的遮蔽层130可阻挡此光线影响静电防护元件120的电性。此外，若遮蔽层130包括彩色光阻材料，且显示设备100为COA架构的显示设备时，显示设备的彩色滤光层与遮蔽层130可由同一膜层所形成，但不以此为限。
本发明的显示设备不以上述实施例为限，下文将继续揭示其它实施例，然而为了简化说明并突显各实施例与上述实施例之间的差异，下文中使用相同标号标注相同元件，并不再对重复部分作赘述。
请参考图6，图6所示为本发明第二实施例的显示设备的剖面示意图。如图6所示，本实施例与第一实施例之间的差异在于本实施例的显示设备200的遮蔽层230为多层结构。举例而言，若遮蔽层230为彩色光阻材料，遮蔽层230的其中一层可为红色光阻材料，遮蔽层230的其中另一层可为绿色光阻材料。若遮蔽层230包括金属材料，遮蔽层230的其中一层可为金属层(例如铬)，遮蔽层230的其中另一层可为金属氧化层(例如氧化铬)，但都不以上述为限。
请参考图7，图7所示为本发明第三实施例的显示设备的剖面示意图。如图7所示，本实施例与第一实施例之间的差异在于本实施例的显示设备300的遮蔽层330可接触对向基板140，例如可作为显示设备300中用以支撑阵列基板110与对向基板140以形成液晶层间隙(cell gap)的间隔物(spacer)，但不以此为限。此外，间隔物举例可为圆柱、四角柱、截锥体或其他适合的形状。
请参考图8，图8所示为本发明第四实施例的显示设备的剖面示意图。如图8所示，本实施例与第一实施例之间的差异在于本实施例的显示设备400的遮蔽层430可由绝缘层IL中的金属层所形成，在图8中，遮蔽层430举例由设置在第二金属层M2与半导体层SM上的第三金属层M3所形成。此外，本实施例的遮蔽层430与第一金属层M1以及第二金属层M2电性绝缘，例如可处于浮接(floating)状态，但不以此为限。
请参考图9，图9所示为本发明第五实施例的显示设备的剖面示意图。如图9所示，本实施例与第一实施例之间的差异在于本实施例的显示设备500的静电防护元件120的第一晶体管T1与第二晶体管T2可为顶闸型薄膜晶体管(top-gate transistor)，包括第一闸极G1与第二闸极G2的闸极电极与半导体层SM位于遮蔽层530上，遮蔽层530位于闸极电极与第一基板SB1之间，且半导体层SM位于闸极电极与遮蔽层530之间，举例来说，遮蔽层530可由第一金属层M1所形成，闸极电极可由第二金属层M2所形成，源极电极(包括第一源极S1与第二源极S2)与汲极电极(包括第一汲极D1与第二汲极D2)可由第三金属层M3所形成，闸极电极、源极电极与汲极电极都位于半导体层SM上，源极电极与汲极电极通过导电连接结构(Via)150电连接半导体层SM，而遮蔽层530位于第一基板SB1与半导体层SM之间，使得图9中的遮蔽层530可阻挡由下而上的光线，闸极电极、源极电极与汲极电极可阻挡由上而下的光线，但不以此为限。于本实施例中，遮蔽层530通过绝缘层IL与半导体层SM电性绝缘。于另一实施例中，遮蔽层530也可由绝缘材料所构成，例如间隔物材料、光阻材料与有机材料的其中至少一种或其他适合的绝缘材料。于此情况下，遮蔽层530可与半导体层SM相接触或不接触。
请参考图10，图10所示为本发明第六实施例的静电防护元件与遮蔽层的俯视示意图。如图10所示，本实施例与第一实施例之间的差异在于本实施例的显示设备600的遮蔽层630包括第一遮蔽层632与第二遮蔽层634，第一遮蔽层632与第二遮蔽层634彼此分隔，并在第一基板SB1的俯视方向D上重迭于静电防护元件120的不同部分，举例来说，第一遮蔽层632重迭于第一半导体层SM1，第二遮蔽层634重迭于第二半导体层SM2，以分别遮蔽半导体层SM的不同部分，但不以此为限。另外，由于遮蔽层630的第一遮蔽层632与第二遮蔽层634彼此分隔，因此使得有更多的光线可照射液晶混和物，以避免液晶混和物中的单体反应不完全。
请参考图11，图11所示为本发明第七实施例的显示设备的剖面示意图，其中图11绘示图2中的多个静电防护元件的剖面图。如图11所示，本实施例与第一实施例之间的差异在于本实施例的显示设备700的遮蔽层730可遮蔽多个静电防护元件120。若显示设备700为彩色滤光层位于对向基板140的架构，也就是用以配向的光线会由阵列基板110的一侧照射入显示设备700内(即图11中由下而上的照射)，显示设备700的遮蔽层730之间可具有大于或等于3微米的间距(类似于图5中的间距SP2)，以允许光线可透过遮蔽层730之间的间隙照射液晶混和物。若本实施例的显示设备700为COA架构的显示设备，由于用以配向的光线会由对向基板140的一侧照射入显示设备700内(即图11中由上而下的照射)，且此光线可在显示设备700中反射而照射到周边区PR内的液晶分子，例如从显示区AR进入液晶层LC中的紫外光可通过反射的方式进入周边区PR中，因此，即使阵列基板110的遮蔽层730在周边区PR中遮蔽多个静电防护元件120的部分不具有孔洞或间隙，也不会影响配向材料的反应，举例而言，本实施例的一个遮蔽层730可遮蔽所有的静电防护元件120，但不以此为限。此外，若遮蔽层730包括彩色光阻材料，且显示设备700为COA架构的显示设备时，显示设备的彩色滤光层与遮蔽层730可由同一膜层所形成，但不以此为限。
请参考图12到图16，图12到图15所示为本发明一实施例的显示设备的制造方法的剖面示意图，图16所示为本发明一实施例的显示设备的制造方法的流程图，其中图12到图15的显示设备100以本发明的第一实施例为例，并省略了显示设备100的显示区AR中的部分元件，而下文也以第一实施例的显示设备100作为范例以对显示设备的制造方法进行说明。如图12与图16所示，先提供如上所述的阵列基板110(步骤1010)，接着，在阵列基板110上形成液晶层LC以及对向基板140，其中液晶层LC设置在阵列基板110与对向基板140之间，且液晶层LC包括多个液晶分子LCM以及多个反应性单体RM(步骤1020)。举例而言，可在阵列基板110上进行液晶滴落，并使液晶均匀散布于阵列基板110上，接着，再将对向基板140设置于阵列基板110上并彼此组立，使得液晶层LC位于对向基板140与阵列基板110之间，其中在进行两个基板的组立之前，可在对向基板140与阵列基板110的其中一个上形成框胶，而在组立时可对两个基板之间进行真空抽气并使框胶黏着于对向基板140与阵列基板110之间，接着再对框胶进行照光(例如紫外光)及/或加热的固化工艺以完成两个基板的组立，但形成液晶层LC与组立两个基板的方式不以此为限。此外，在进行两个基板的组立之前，还可选择性的在阵列基板110与对向基板140的表面形成有机配向材料层，以利于液晶分子的配向工艺，其中有机配向材料层举例可包括聚酰亚胺(Polyimide,PI)。
如图13、图14与图16所示，进行第一配向工艺(步骤1030)，而在第一配向工艺中，先施加电压V于阵列基板110，以使液晶层LC的液晶分子LCM朝预定方向倾斜而产生预倾角(步骤1030a，如图13所示)，而在本实施例中，可同时施加电压V于阵列基板110与对向基板140，例如同时对阵列基板110中的电子元件(如显示区AR中的像素电极)以及对对向基板140的共同电极提供电压。接着，在施加电压V的状况下，对液晶层LC照射用以配向的光线UV，使至少部分的反应性单体RM反应以固定邻近对向基板140表面与阵列基板110表面(有机配向材料层的表面)的液晶分子的预倾角以及方向(步骤1030b，如图14所示)，使得而移除电压后，邻近基板表面(有机配向材料层的表面)的液晶分子可维持固定的预倾角与方向，其中照射光线UV而反应的反应性单体RM可与基板表面的有机配向材料层交联固化而形成配向层AL，在本实施例中，所照射的光线UV为紫外光(波长范围为254纳米到400纳米)，并在图14中由下而上的照射，但不以此为限，在其他实施例中，光线UV可由上而下的照射。若在第一配向工艺中将所有的反应性单体RM完全反应，则可形成如图15所示的显示设备100。另外，若在第一配向工艺中无法将所有的反应性单体RM完全反应时，则可进行第二配向工艺，对液晶层LC继续照射光线UV，将剩下的反应性单体总反应量趋近饱和(步骤1040)，进而形成如图15所示的显示设备100。此外，在进行第一配向工艺之前，可选择性地进行一切割工艺，将显示设备100的部分连接垫裸露，使得电压V可通过扎针的方式经由此些连接垫传递到阵列基板110中的电子元件或对向基板140的共同电极。由于本实施例的静电防护元件120的半导体层SM可被遮蔽层130、闸极电极、源极电极与汲极电极所遮蔽(绘示于图4)，因此，可使得半导体层SM在第一配向工艺与第二配向工艺中所照射到的光线UV的强度低于液晶层所照射到的光线UV的强度，藉此减少光线UV对于半导体层SM的影响，进而减少光线UV对于静电防护元件120的功能的影响。
综上所述，由于本发明的遮蔽层在第一基板的俯视方向上重迭于静电防护元件，且遮蔽层具有阻挡用以配向的光线的特性，因此，可减少此光线对于静电防护元件的影响，以达到预定的配向，进而提升显示设备的显示质量。
以上所述仅为本发明的实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (9)

1.一种电子装置，其特征在于，包括：
一第一基板，具有一周边区；以及
一静电防护元件，设置于所述第一基板的所述周边区上，其中所述静电防护元件包括：
一第一半导体层与一第二半导体层，所述第一半导体层与所述第二半导体层彼此分离；以及
一第一闸极与一第二闸极，所述第一闸极与所述第二闸极彼此分离，所述第一闸极与所述第一半导体层电连接，所述第二闸极与所述第二半导体层电连接。
2.如权利要求1所述的电子装置，其特征在于，还包括：
一第二基板，与所述第一基板相对设置；以及
一遮蔽层，设置于所述第一基板与所述第二基板之间，其中所述遮蔽层在所述电子装置的一俯视方向上至少部分重迭于所述第一半导体层与所述第二半导体层中的至少其中之一。
3.如权利要求1所述的电子装置，其特征在于，还包括一第一信号线与一第二信号线，其中所述静电防护元件电连接所述第一信号线与所述第二信号线。
4.如权利要求3所述的电子装置，其特征在于，所述第一信号线与所述第二信号线是位于不同层的导电层。
5.如权利要求3所述的电子装置，其特征在于，所述第一信号线与所述第二信号线是位于同层的导电层。
6.如权利要求3所述的电子装置，其特征在于，所述第二信号线为一共同电极线。
7.如权利要求3所述的电子装置，其特征在于，还包括一连接垫，其中所述连接垫电连接所述第一信号线。
8.如权利要求1所述的电子装置，其特征在于，还包括：
一第二基板，与所述第一基板相对设置；以及
一间隔物，设置在所述第一基板与所述第二基板之间，其中所述间隔物在所述电子装置的一俯视方向上至少部分重迭于所述静电防护元件。
9.如权利要求8所述的电子装置，其特征在于，所述间隔物设置在所述第一基板上。
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