CN106773330A - 液晶面板及其液晶配向方法、液晶显示器 - Google Patents
液晶面板及其液晶配向方法、液晶显示器 Download PDFInfo
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Abstract
本发明公开一种液晶面板,其包括对盒设置的彩膜基板和阵列基板以及夹设于所述彩膜基板和所述阵列基板之间的若干液晶分子,所述彩膜基板包括配向电极以及设置在所述配向电极上的第一配向膜层,所述阵列基板包括公共电极以及设置在所述公共电极上的第二配向膜层;当对所述液晶分子进行配向时,对所述第一配向膜层和所述第二配向膜层进行机械的摩擦处理,之后对所述配向电极和所述公共电极施加电压,并且对所述液晶分子进行紫外曝光,以在所述彩膜基板和所述阵列基板之间提供垂直电场,使所述液晶分子的预倾角达到0°。本发明还公开一种该液晶面板的液晶配向方法。本发明能够使液晶分子的预倾角达到0°,从而避免IPS型和FFS型液晶面板在暗态时出现漏光。
Description
技术领域
本发明属于液晶显示技术领域,具体地讲,涉及一种液晶面板及其液晶配向方法、液晶显示器。
背景技术
随着光电与半导体技术的演进,也带动了平板显示器(Flat Panel Display)的蓬勃发展,而在诸多平板显示器中,液晶显示器(Liquid Crystal Display,简称LCD)因具有高空间利用效率、低消耗功率、无辐射以及低电磁干扰等诸多优越特性,已被应用于生产生活的各个方面。
液晶显示器通常为背光型液晶显示器,其包括相对设置的液晶面板和背光模块。液晶面板的工作原理是在两片平行的玻璃基板(即对盒的彩膜基板(CF基板)和阵列基板(Array基板))当中放置液晶分子,两片玻璃基板通过向液晶分子通电与否来控制液晶分子改变方向,从而将背光模组的光线折射出来产生影像。
目前主流的液晶面板的类型分为扭曲向列(Twisted Nematic,TN)或超扭曲向列(Super Twisted Nematic,STN)型、面内转换(In-Plane Switching,IPS)型、垂直配向(Vertical Alignment,VA)型以及边缘电场驱动(Fringe-field Switching)型。其中IPS模式是利用与基板面大致平行的电场驱动液晶分子沿基板面内转动以响应的模式,由于具有较大的可视角度以及响应速度快等优点,所以被用于各种TV显示用途当中。而FFS模式是通过同一平面内像素间电极产生边缘电场,使电极间以及电极正上方的液晶分子都能在平行于基板的平面方向发生旋转转换,从而提高液晶层的透光效率,以克服IPS模式的透光效率低的问题,在宽视角的前提下,实现了高的透光效率。
然而,在现有的IPS型和FFS型液晶面板的液晶配向过程中,液晶分子的预倾角无法达到0°,从而IPS型和FFS型液晶面板在暗态时出现漏光现象。
发明内容
为了解决上述技术问题,本发明提供了一种能够使液晶分子的预倾角达到0°的液晶面板及其液晶配向方法、液晶显示器。
根据本发明的一方面,提供了一种液晶面板,其包括对盒设置的彩膜基板和阵列基板以及夹设于所述彩膜基板和所述阵列基板之间的若干液晶分子,所述彩膜基板包括配向电极以及设置在所述配向电极上的第一配向膜层,所述阵列基板包括公共电极以及设置在所述公共电极上的第二配向膜层;当对所述液晶分子进行配向时,对所述第一配向膜层和所述第二配向膜层进行机械的摩擦处理,之后对所述配向电极和所述公共电极施加电压,并且对所述液晶分子进行紫外曝光,以在所述彩膜基板和所述阵列基板之间提供垂直电场,使所述液晶分子的预倾角达到0°。
进一步地,所述彩膜基板还包括:第一基板、黑色矩阵、若干彩色光阻块、第一绝缘层;所述黑色矩阵设置于所述基板上且限定出多个第一像素区域,所述若干彩色光阻块设置于所述基板上,且每个彩色光阻块位于其对应的第一像素区域中,所述第一绝缘层设置在所述黑色矩阵和所述若干彩色光阻块上,所述配向电极设置在所述第一绝缘层上。
进一步地,所述阵列基板还包括:第二基板、设置在所述第二基板上的多条扫描线和多条数据线、多个开关单元、绝缘保护层、像素电极,所述多条扫描线和所述多条数据线相互绝缘交错,以限定出多个第二像素区域,每个开关单元设置在其对应的一个第二像素区域中,所述绝缘保护层设置在所述多个开关单元上,所述像素电极和所述公共电极彼此独立设置在所述绝缘保护层上,所述第二配向膜层设置在所述像素电极、所述公共电极和所述绝缘保护层上。
进一步地,所述开关单元包括:形成于所述第二基板上的栅极;形成于所述栅极和所述第二基板上的栅极绝缘层;对应于所述栅极上方且形成于所述栅极绝缘层上的半导体层;形成于所述半导体层和所述栅极绝缘层上的源极和漏极,所述绝缘保护层形成于所述源极、所述漏极、所述半导体层以及所述栅极绝缘层上,所述绝缘层保护层上形成对应于所述漏极上方的过孔,所述像素电极通过所述过孔与所述漏极相接触。
进一步地,所述阵列基板还包括:第二基板、设置在所述第二基板上的多条扫描线和多条数据线、多个开关单元、第二绝缘层、绝缘保护层、像素电极,所述多条扫描线和所述多条数据线相互绝缘交错,以限定出多个第二像素区域,每个开关单元设置在其对应的一个第二像素区域中,所述绝缘保护层设置在所述多个开关单元上,所述公共电极设置在所述绝缘保护层上,所述第二绝缘层设置在所述公共电极和所述绝缘保护层上,所述像素电极设置在所述第二绝缘层上,所述第二配向膜层设置在所述像素电极和所述第二绝缘层上。
进一步地,所述开关单元包括:形成于所述第二基板上的栅极;形成于所述栅极和所述第二基板上的栅极绝缘层;对应于所述栅极上方且形成于所述栅极绝缘层上的半导体层;形成于所述半导体层和所述栅极绝缘层上的源极和漏极,所述绝缘保护层形成于所述源极、所述漏极、所述半导体层以及所述栅极绝缘层上,所述绝缘层保护层和所述第二绝缘层上形成对应于所述漏极上方的过孔,所述像素电极通过所述过孔与所述漏极相接触。
进一步地,所述若干液晶分子中掺有反应型单体。
根据本发明的另一方面,还提供了一种上述液晶面板的液晶配向方法,其包括步骤:对所述第一配向膜层和所述第二配向膜层进行机械的摩擦处理;对所述配向电极和所述公共电极施加电压,并且对所述液晶分子进行紫外曝光,以在所述彩膜基板和所述阵列基板之间提供垂直电场,使所述液晶分子的预倾角达到0°。
根据本发明的又一方面,又提供了一种液晶显示器,包括相对的上述液晶面板和背光模块。
本发明的有益效果:本发明的液晶面板及其液晶配向方法,能够使液晶分子的预倾角达到0°,从而避免IPS型和FFS型液晶面板在暗态时出现漏光。
附图说明
通过结合附图进行的以下描述,本发明的实施例的上述和其它方面、特点和优点将变得更加清楚,附图中:
图1是根据本发明的实施例的彩膜基板的俯视示意图;
图2是根据本发明的实施例的彩膜基板的侧视示意图;
图3是根据本发明的实施例的阵列基板的俯视示意图;
图4是根据本发明的实施例的阵列基板的侧视示意图;
图5是根据本发明的另一实施例的阵列基板的俯视示意图;
图6是根据本发明的另一实施例的阵列基板的侧视示意图;
图7是采用图2所示的彩膜基板和图4所示的阵列基板对盒形成的液晶面板的结构示意图;
图8是采用图2所示的彩膜基板和图6所示的阵列基板对盒形成的液晶面板的结构示意图。
具体实施方式
以下,将参照附图来详细描述本发明的实施例。然而,可以以许多不同的形式来实施本发明,并且本发明不应该被解释为限制于这里阐述的具体实施例。相反,提供这些实施例是为了解释本发明的原理及其实际应用,从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。
在附图中,为了清楚器件,夸大了层和区域的厚度。将理解的是,在一元件被称为设置于另一元件“之上”或“上”时,它可以直接设置于该另一元件上,或者也可以存在中间元件。
图1是根据本发明的实施例的彩膜基板的俯视示意图。图2是根据本发明的实施例的彩膜基板的侧视示意图。在图1中,为了便于图示黑色矩阵120和彩色光阻块130的设置,未示出第一绝缘层140、配向电极150以及第一配向膜层160。
参照图1和图2,根据本发明的实施例的彩膜基板100包括:第一基板110、黑色矩阵120、多个彩色光阻块130、第一绝缘层140、配向电极150以及第一配向膜层160。
第一基板110可例如是透明的玻璃基板或者树脂基板,但本发明并不限制于此。
黑色矩阵120设置在第一基板110之上且限定出多个第一像素区域PX1。这些第一像素区域PX1呈阵列排布。
多个彩色光阻块130设置在第一基板110之上,且每个彩色光阻块130位于其对应的一个第一像素区域PX1中。在本实施例中,所述彩色光阻块130为红色光阻块或绿色光阻块或蓝色光阻块,但本发明并不限制于此,例如彩色光阻块130可以为任何合适颜色(诸如白色)的光阻块。所述多个彩色光阻块130包括红色光阻块、绿色光阻块和蓝色光阻块。在本实施例中,可以以红色光阻块、绿色光阻块和蓝色光阻块为一光阻块单元阵列排布。
第一绝缘层140设置在黑色矩阵120和多个彩色光阻块130上。第一绝缘层140可以采用无机绝缘材料或者有机绝缘材料形成。
配向电极150设置在第一绝缘层140上。作为本发明的一种实施方式,配向电极150可例如由铟锡氧化物、铟锌氧化物、铝锡氧化物、铝锌氧化物、铟锗锌氧化物中的一种或多种形成,但本发明并不限制于此。
第一配向膜层160设置在配向电极150之上。作为本发明的一种实施方式,第一配向膜层160由聚酰亚胺(PI)形成,但本发明并不限制于此。
图3是根据本发明的实施例的阵列基板的俯视示意图。图4是根据本发明的实施例的阵列基板的侧视示意图。在图3中,未示出栅极绝缘层242和第二配向膜层280,而在图4中,未示出扫描线220和数据线230,这是为了便于图示其它元件。
参照图3和图4,根据本发明的实施例的阵列基板200为IPS型阵列基板,其包括:第二基板210、多条扫描线220、多条数据线230、多个开关单元240、绝缘保护层250、像素电极260、公共电极270以及第二配向膜层280。
第二基板210可例如是透明的玻璃基板或者树脂基板,但本发明并不限制于此。
多条扫描线220和多条数据线230相互绝缘交错,以限定出多个第二像素区域PX2。当阵列基板200与彩膜基板100对盒组装之后,第二像素区域PX2和第一像素区域PX1一一对应。
每个开关单元240设置于其对应的一个第二像素区域PX2中。作为本发明的一实施方式,开关单元240包括:形成于第二基板210上的栅极241、形成于栅极241及第二基板210上的栅极绝缘层242、对应于栅极241上方且形成于栅极绝缘层242上的半导体层(或称有源层)243、形成于半导体层243及栅极绝缘层242上的源极244和漏极245,其中源极244和漏极245分别与半导体层243的两端相接触
绝缘保护层250形成于所述源极244、漏极245、半导体层243以及栅极绝缘层242上。所述绝缘保护层250上对应所述漏极245的上方设有过孔251。
像素电极260和公共电极270形成于绝缘保护层250上,其中像素电极260通过过孔251与所述漏极245相接触。
利用同一导电透明层图案化得到像素电极260和公共电极270,像素电极260和公共电极270彼此独立绝缘。在每一第二像素区域PX2范围内的像素电极260为一体,而在不同第二像素区域PX2范围内的像素电极260彼此独立绝缘。在整个阵列基板上,公共电极270为一体。
此外,所述导电透明层采用铟锡氧化物、铟锌氧化物、铝锡氧化物、铝锌氧化物、铟锗锌氧化物中的一种或多种制成,但本发明并不限制于此。
第二配向膜层280形成于所述像素电极260、公共电极270和绝缘保护层250上。作为本发明的一种实施方式,第二配向膜层280由聚酰亚胺(PI)形成,但本发明并不限制于此。
图5是根据本发明的另一实施例的阵列基板的俯视示意图。图6是根据本发明的另一实施例的阵列基板的侧视示意图。在图5中,未示出栅极绝缘层242、第二配向膜层280、第二绝缘层290和公共电极270,而在图4中,未示出扫描线220和数据线230,这是为了便于图示其它元件。
参照图5和图6,根据本发明的另一实施例的阵列基板200’为FFS型阵列基板,其与图3和图4所示的阵列基板200不同的是,公共电极270和像素电极260不在同一平面上。
具体地,根据本发明的另一实施例的阵列基板200’还包括:第二绝缘层290。与图3和图4所示的阵列基板200不同之处在于:公共电极270形成于绝缘保护层250上,其中对应所述漏极245上方没有公共电极270,但在整个阵列基板上,公共电极270依然保持一体。
第二绝缘层290形成于公共电极270和绝缘保护层250之上。第二绝缘层290可以采用无机绝缘材料或者有机绝缘材料形成。
像素电极260形成于第二绝缘层290上。过孔251贯穿第二绝缘层290,从而使像素电极260通过过孔251与所述漏极245相接触。
图7是采用图2所示的彩膜基板和图4所示的阵列基板对盒形成的液晶面板的结构示意图。图8是采用图2所示的彩膜基板和图6所示的阵列基板对盒形成的液晶面板的结构示意图。
参照图7,彩膜基板100和阵列基板200对盒设置,若干液晶分子300填充在彩膜基板100和阵列基板200之间。
参照图8,彩膜基板100和阵列基板200’对盒设置,若干液晶分子300填充在彩膜基板100和阵列基板200’之间。
当对液晶分子300进行配向时,液晶面板的液晶配向方法包括步骤:
首先,对所述第一配向膜层160和所述第二配向膜层280进行机械的摩擦(Rubbing)处理。这里,采用通常的IPS型液晶面板中对配向膜层进行摩擦的方法即可。
接着,对配向电极150和公共电极270施加电压,并且对所述液晶分子300进行紫外曝光,以在彩膜基板100和阵列基板200或200’之间提供垂直电场,使所述液晶分子300的预倾角达到0°。
在本实施例中,若干液晶分子300中可以掺有反应型单体(Reactive Monomer)。当施加电压及紫外光照射时,反应型单体可与液晶分子300发生相分离现象,从而在配向膜层上形成聚合物,该聚合物通过跟液晶分子300的相互作用,使液晶分子300具有预倾角。
综上所述,根据本发明的实施例,能够使液晶分子的预倾角达到0°,从而使避免IPS型和FFS型液晶面板在暗态时出现漏光。
虽然已经参照特定实施例示出并描述了本发明,但是本领域的技术人员将理解:在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下,可在此进行形式和细节上的各种变化。
Claims (9)
1.一种液晶面板,其特征在于,包括对盒设置的彩膜基板和阵列基板以及夹设于所述彩膜基板和所述阵列基板之间的若干液晶分子,所述彩膜基板包括配向电极以及设置在所述配向电极上的第一配向膜层,所述阵列基板包括公共电极以及设置在所述公共电极上的第二配向膜层;
当对所述液晶分子进行配向时,对所述第一配向膜层和所述第二配向膜层进行机械的摩擦处理,之后对所述配向电极和所述公共电极施加电压,并且对所述液晶分子进行紫外曝光,以在所述彩膜基板和所述阵列基板之间提供垂直电场,使所述液晶分子的预倾角达到0°。
2.根据权利要求1所述的液晶面板,其特征在于,所述彩膜基板还包括:第一基板、黑色矩阵、若干彩色光阻块、第一绝缘层;所述黑色矩阵设置于所述基板上且限定出多个第一像素区域,所述若干彩色光阻块设置于所述基板上,且每个彩色光阻块位于其对应的第一像素区域中,所述第一绝缘层设置在所述黑色矩阵和所述若干彩色光阻块上,所述配向电极设置在所述第一绝缘层上。
3.根据权利要求1或2所述的液晶面板,其特征在于,所述阵列基板还包括:第二基板、设置在所述第二基板上的多条扫描线和多条数据线、多个开关单元、绝缘保护层、像素电极,所述多条扫描线和所述多条数据线相互绝缘交错,以限定出多个第二像素区域,每个开关单元设置在其对应的一个第二像素区域中,所述绝缘保护层设置在所述多个开关单元上,所述像素电极和所述公共电极彼此独立设置在所述绝缘保护层上,所述第二配向膜层设置在所述像素电极、所述公共电极和所述绝缘保护层上。
4.根据权利要求3所述的液晶面板,其特征在于,所述开关单元包括:
形成于所述第二基板上的栅极;
形成于所述栅极和所述第二基板上的栅极绝缘层;
对应于所述栅极上方且形成于所述栅极绝缘层上的半导体层;
形成于所述半导体层和所述栅极绝缘层上的源极和漏极,所述绝缘保护层形成于所述源极、所述漏极、所述半导体层以及所述栅极绝缘层上,所述绝缘层保护层上形成对应于所述漏极上方的过孔,所述像素电极通过所述过孔与所述漏极相接触。
5.根据权利要求1或2所述的液晶面板,其特征在于,所述阵列基板还包括:第二基板、设置在所述第二基板上的多条扫描线和多条数据线、多个开关单元、第二绝缘层、绝缘保护层、像素电极,所述多条扫描线和所述多条数据线相互绝缘交错,以限定出多个第二像素区域,每个开关单元设置在其对应的一个第二像素区域中,所述绝缘保护层设置在所述多个开关单元上,所述公共电极设置在所述绝缘保护层上,所述第二绝缘层设置在所述公共电极和所述绝缘保护层上,所述像素电极设置在所述第二绝缘层上,所述第二配向膜层设置在所述像素电极和所述第二绝缘层上。
6.根据权利要求5所述的液晶面板,其特征在于,所述开关单元包括:
形成于所述第二基板上的栅极;
形成于所述栅极和所述第二基板上的栅极绝缘层;
对应于所述栅极上方且形成于所述栅极绝缘层上的半导体层;
形成于所述半导体层和所述栅极绝缘层上的源极和漏极,所述绝缘保护层形成于所述源极、所述漏极、所述半导体层以及所述栅极绝缘层上,所述绝缘层保护层和所述第二绝缘层上形成对应于所述漏极上方的过孔,所述像素电极通过所述过孔与所述漏极相接触。
7.根据权利要求1所述的液晶面板,其特征在于,所述若干液晶分子中掺有反应型单体。
8.一种权利要求1至5任一项所述的液晶面板的液晶配向方法,其特征在于,包括步骤:
对所述第一配向膜层和所述第二配向膜层进行机械的摩擦处理;
对所述配向电极和所述公共电极施加电压,并且对所述液晶分子进行紫外曝光,以在所述彩膜基板和所述阵列基板之间提供垂直电场,使所述液晶分子的预倾角达到0°。
9.一种液晶显示器,包括相对的液晶面板和背光模块,其特征在于,所述液晶面板为权利要求1至7任一项所述的液晶面板。
Priority Applications (3)
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CN201611064137.9A CN106773330A (zh) | 2016-11-25 | 2016-11-25 | 液晶面板及其液晶配向方法、液晶显示器 |
PCT/CN2017/071332 WO2018094865A1 (zh) | 2016-11-25 | 2017-01-17 | 液晶面板及其液晶配向方法、液晶显示器 |
US15/328,899 US20180210293A1 (en) | 2016-11-25 | 2017-01-17 | Liquid crystal panels, liquid crystal alignment methods thereof and liquid crystal displays |
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CN108121116A (zh) * | 2017-12-29 | 2018-06-05 | 深圳市华星光电半导体显示技术有限公司 | 一种液晶显示面板的配向方法 |
CN108267898A (zh) * | 2018-01-16 | 2018-07-10 | 深圳市华星光电技术有限公司 | 改善自取向液晶的配向效果的方法 |
WO2019075887A1 (zh) * | 2017-10-19 | 2019-04-25 | 深圳市华星光电技术有限公司 | 阵列基板及显示面板 |
CN110109293A (zh) * | 2019-04-04 | 2019-08-09 | 深圳市华星光电技术有限公司 | 液晶无机配向薄膜的制造方法 |
CN110275333A (zh) * | 2018-03-14 | 2019-09-24 | 群创光电股份有限公司 | 显示设备以及其制造方法 |
CN114784022A (zh) * | 2022-05-10 | 2022-07-22 | 长沙惠科光电有限公司 | 阵列基板及其制作方法、显示装置 |
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CN110109293A (zh) * | 2019-04-04 | 2019-08-09 | 深圳市华星光电技术有限公司 | 液晶无机配向薄膜的制造方法 |
CN114784022A (zh) * | 2022-05-10 | 2022-07-22 | 长沙惠科光电有限公司 | 阵列基板及其制作方法、显示装置 |
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