CN108899280A - 显示屏及其制造方法 - Google Patents
显示屏及其制造方法 Download PDFInfo
- Publication number
- CN108899280A CN108899280A CN201810718560.9A CN201810718560A CN108899280A CN 108899280 A CN108899280 A CN 108899280A CN 201810718560 A CN201810718560 A CN 201810718560A CN 108899280 A CN108899280 A CN 108899280A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 39
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 89
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 230000005855 radiation Effects 0.000 claims abstract description 31
- 239000010410 layer Substances 0.000 claims description 130
- 239000012790 adhesive layer Substances 0.000 claims description 75
- 239000000463 material Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 23
- 230000001070 adhesive effect Effects 0.000 claims description 10
- 239000000853 adhesive Substances 0.000 claims description 9
- 239000007787 solid Substances 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 239000004814 polyurethane Substances 0.000 claims description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 229920001296 polysiloxane Polymers 0.000 claims description 4
- 229920002635 polyurethane Polymers 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 15
- 230000000694 effects Effects 0.000 abstract description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 abstract 1
- -1 Polybutylene Polymers 0.000 description 8
- 239000002042 Silver nanowire Substances 0.000 description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 230000005476 size effect Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 239000002033 PVDF binder Substances 0.000 description 2
- 229930040373 Paraformaldehyde Natural products 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004697 Polyetherimide Substances 0.000 description 2
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- 229920001748 polybutylene Polymers 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920001601 polyetherimide Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000004633 polyglycolic acid Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920006324 polyoxymethylene Polymers 0.000 description 2
- 229920001955 polyphenylene ether Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920002620 polyvinyl fluoride Polymers 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000004693 Polybenzimidazole Substances 0.000 description 1
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- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 1
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- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 229920002480 polybenzimidazole Polymers 0.000 description 1
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- 230000035945 sensitivity Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Laminated Bodies (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810718560.9A CN108899280B (zh) | 2018-06-30 | 2018-06-30 | 显示屏及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810718560.9A CN108899280B (zh) | 2018-06-30 | 2018-06-30 | 显示屏及其制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN108899280A true CN108899280A (zh) | 2018-11-27 |
CN108899280B CN108899280B (zh) | 2021-01-29 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201810718560.9A Active CN108899280B (zh) | 2018-06-30 | 2018-06-30 | 显示屏及其制造方法 |
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Country | Link |
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CN (1) | CN108899280B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110136891A (zh) * | 2019-05-24 | 2019-08-16 | 南京大学 | 一种选区激光图案化制备柔弹性电极的方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102324462A (zh) * | 2006-10-12 | 2012-01-18 | 凯博瑞奥斯技术公司 | 基于纳米线的透明导体及其应用 |
CN104992924A (zh) * | 2015-07-01 | 2015-10-21 | 昆山工研院新型平板显示技术中心有限公司 | 柔性显示器件及其制造方法 |
CN105204695A (zh) * | 2014-06-12 | 2015-12-30 | 宸鸿科技(厦门)有限公司 | 纳米银线导电层叠结构及电容式触控面板 |
CN105321956A (zh) * | 2014-08-05 | 2016-02-10 | 乐金显示有限公司 | 柔性显示装置及其制造方法 |
-
2018
- 2018-06-30 CN CN201810718560.9A patent/CN108899280B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102324462A (zh) * | 2006-10-12 | 2012-01-18 | 凯博瑞奥斯技术公司 | 基于纳米线的透明导体及其应用 |
CN105204695A (zh) * | 2014-06-12 | 2015-12-30 | 宸鸿科技(厦门)有限公司 | 纳米银线导电层叠结构及电容式触控面板 |
CN105321956A (zh) * | 2014-08-05 | 2016-02-10 | 乐金显示有限公司 | 柔性显示装置及其制造方法 |
CN104992924A (zh) * | 2015-07-01 | 2015-10-21 | 昆山工研院新型平板显示技术中心有限公司 | 柔性显示器件及其制造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110136891A (zh) * | 2019-05-24 | 2019-08-16 | 南京大学 | 一种选区激光图案化制备柔弹性电极的方法 |
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Publication number | Publication date |
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CN108899280B (zh) | 2021-01-29 |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
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EE01 | Entry into force of recordation of patent licensing contract | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20181127 Assignee: Bazhou Yungu Electronic Technology Co., Ltd.|Kunshan Institute of technology new flat panel display technology center Co., Ltd.|Kunshan Guoxian photoelectric Co., Ltd Assignor: The valley (Guan) Technology Co. Ltd. Contract record no.: X2019990000155 Denomination of invention: Protective film for plasma display panel and method for manufacturing this protective film, and plasma display panel and method for manufacturing thereof License type: Common License Record date: 20191030 |
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TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20191210 Address after: No. 2 Xiangshan Avenue, Yongning Street, Zengcheng District, Guangzhou, Guangdong province (the core of Zengcheng economic and Technological Development Zone) Applicant after: Guangzhou Guoxian Technology Co., Ltd Address before: 065500 Hebei Langfang County Guan emerging industry demonstration area Applicant before: The valley (Guan) Technology Co. Ltd. |
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