JP5591710B2 - 有機電子発光デバイス - Google Patents
有機電子発光デバイス Download PDFInfo
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- 0 CC(C)NC1=*(C=C)c(cc2)ccc2Oc(cc2)ccc2*2=C(*)C3c4ccccc4C=CC3ON2Oc2c1c1ccccc1cc2 Chemical compound CC(C)NC1=*(C=C)c(cc2)ccc2Oc(cc2)ccc2*2=C(*)C3c4ccccc4C=CC3ON2Oc2c1c1ccccc1cc2 0.000 description 1
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Description
Mは出現毎に同一または異なり、Be、Mg、Ca、Sr、Ba、Fe、Ru、Os、Co、Ni、Pd、Cu、Zn、Cd、Hg、SnおよびPbから選択された+IIの酸化状態にある金属イオンである;
Xは、出現毎に同一または異なる、O、SまたはCO-Oである;
Ar1は、1つ以上の遊離基Rで置換され得る5〜60個の芳香環原子を持つ芳香族またはヘテロ芳香族環系であり、個々の芳香族基は、さらに、1つ以上の隣接していないC原子がOまたはSで置換され得る1〜10個のC原子を持つアルキレン基を介して互いに接続され得る;
Ar2は出現毎に同一または異なり、1つ以上の遊離基Rで置換され得る5〜60個の芳香環原子を持った芳香族またはヘテロ芳香族環系である;
Yは出現毎に同一または異なり、単結合であるか、または、窒素原子と結合されていない1つ以上の隣接していないC原子がOで置き換えられてもよく、1つ以上の遊離基Rで置換されてもよい1〜10個のC原子を持つアルキレン基である;
Rは出現毎に同一または異なり、H、F、Cl、Br、I、N(R2)2、CN、NO2、Si(R2)3、B(OR2)2、C(=O)R2、P(=O)(R2)2、S(=O)R2、S(=O)2R2、OSO2R2、各々が1つ以上の遊離基R2で置換され得る1〜40個のC原子を持つ直鎖アルキル、アルコキシもしくはチオアルキル基または3〜40個のC原子を持つ分岐鎖もしくは環状アルキル、アルコキシもしくはチオアルキル基(ここで、1つ以上の隣接していないCH2基はR2C=CR2、C≡C、Si(R2)2、Ge(R2)2、Sn(R2)2、C=O、C=S、C=Se、C=NR2、P(=O)(R2)、SO、SO2、NR2、O、SまたはCONR2に置き換えられてもよく、1つ以上のH原子は、F、Cl、Br、I、CNもしくはNO2、または、各々が1つ以上の遊離基R2で置換され得る5〜60個の芳香環原子を持つ芳香族もしくはヘテロ芳香族環系、または、1つ以上の遊離基R2で置換され得る5〜60個の芳香環原子を持つアリールオキシもしくはヘテロアリールオキシ基で置き換えられてもよい)、またはこれらの系の組合せであり、ここで2つ以上の置換基Rは、互いに単環式もしくは多環式の、脂肪族環系もしくは芳香族環系を形成し得る;
R1は出現毎に同一または異なり、H、F、CF3、各々が1つ以上の遊離基R2で置換され得る1〜40個のC原子を持つ直鎖アルキル基または3〜40個のC原子を持つ分岐鎖もしくは環状アルキル基 (ここで、1つ以上の隣接していないCH2基はR2C=CR2、C≡C、Si(R2)2、Ge(R2)2、Sn(R2)2で置き換えられてもよく、1つ以上のH原子は、F、Cl、Br、I、CNもしくはNO2、または、各々が1つ以上の遊離基R2で置換され得る5〜60個の芳香環原子を持つ芳香族もしくはヘテロ芳香族環系で置き換えられてもよい)、またはこれらの系の組合せであり、ここでR1は、1つ以上の置換基Rを有する単環式もしくは多環式の、脂肪族環系もしくは芳香族環系を形成し得る;
R2は出現毎に同一または異なり、H、F、または1〜20個の炭素原子を持つ脂肪族、芳香族もしくはヘテロ芳香環族炭化水素の遊離基であり、さらに、1つ以上のH原子はFで置き換えられてもよく、ここで2つ以上の置換基R2は、互いに単環式もしくは多環式の、脂肪族環系もしくは芳香族環系を形成し得る;
nは出現毎に同一または異なる、0、1または2である)。
DCyは出現毎に同一または異なり、少なくとも1つのドナー原子、好ましくは窒素、カルベンの形態にある炭素、またはリンを含む環状基であり、前記環状基はドナー原子を介して金属と結合され、かつ、1つ以上の置換基Rも持ち得、前記基DCyおよびCCyは共有結合を介して互いに接続される;
CCyは出現毎に同一または異なり、炭素原子を含む環状基であり、前記環状基は炭素原子を介して金属と結合され、かつ、1つ以上の置換基Rも持ち得る;
Aは出現毎に同一または異なり、モノアニオン性の二座キレート配位子、好ましくはジケトナート配位子である)。
1. B-Alqおよび他のアルミニウム錯体と比較して、著しく高い出力効率をもたらす式(I)の化合物の使用によって、動作電圧が顕著に低下する。
以下の合成は、特に表示がない限り、乾燥溶媒中での保護ガス雰囲気下で実行される。出発原料はALDRICHから購入可能なものであるか、または文献既知のプロセスによって調製される。2,2'-ジニトロビフェニルからの 2,2'-ジアミノビフェニルの合成は、Chem. Commun. 2005, 46, 5799-5801に記載されたプロセスに従って実行される。4,4'-ジブロモ-2,2'-ジニトロビフェニルの合成はJ. Am. Chem. Soc. 2006, 128, 9034-9035に記載される。2-メルカプトベンズアルデヒドの合成はSynlett 2001, 1956-1958に記載される。
錯体を調製するための2つの一般的方法がある:
A) 芳香族アミンと、金属塩と、o-ヒドロキシアルデヒドまたはo-ヒドロキシケトンとの反応;
B) 芳香族アミンのシッフ塩基と金属塩との反応。
配位子合成は、生成した水を除去するために共沸蒸留を用いて実行する。300 mLの乾燥トルエンを、三口フラスコ、スターラー、内部温度計および滴下漏斗を備えた蒸留装置中で、沸騰するまで加熱する。50 mLの乾燥トルエン中の60 mmolの芳香族アミンの溶液と、50 mLのトルエン中の120 mmolのアルデヒドまたはケトンの溶液とを、その後、緩徐に滴下で添加する。触媒量のp-トルエンスルホン酸を混合物に添加する。透明な、凝縮されたトルエンが現れるまで蒸留を実行する。溶媒の残りを真空オイルポンプ(130 Pa)で除去する。アゾメチンを黄色の固体として単離し、トルエンで再結晶させ、MeOHで洗浄する。
100 mLのメタノール中の対応するイミン配位子(17 mmol)の溶液を、100 mLのメタノール中の19 mmolの適切な金属塩、例えば3.4 gの酢酸亜鉛二水和物の溶液に添加し、混合物を室温下で3日間攪拌する。濾過後、固体を減圧下で乾燥し、引続いて、保護ガス下で再結晶させる。
合成は、400 mLのトルエン中の11.16 g (60.59 mmol)の2,2'-ジアミノビフェニル、16.3 g (120 mmol)の2-ヒドロキシアセトフェノンおよび0.2 g (1.1 mmol)のp-トルエンスルホン酸から実行される。 24時間後、沈殿した固体を冷メタノールで洗浄し、20 g (47 mmol)の結晶性固体を得る。総収率は76 %である。
合成は、200 mLのメタノール中の3.4 g (19 mmol)の酢酸亜鉛二水和物および6 g (17mmol)の配位子から実行される。24時間後、沈殿した固体を冷メタノールで洗浄し、減圧下で乾燥させ、引続いて、保護ガス下にて無水EtOHで再結晶させ、6 g (13.1 mmol)の結晶性固体を得る。総収率は86 % (Tg = 143.4℃、Tm = 261.0℃)である。
合成は、400 mLのトルエン中の11.16 g (60.59 mmol)の2,2'-ジアミノビフェニル、23 g (120 mmol)の2-ヒドロキシベンゾフェノンおよび0.2 g (1.1 mmol)のp-トルエンスルホン酸から実行される。24時間後、沈殿した固体を冷メタノールで洗浄し、22.5 g (41 mmol)の結晶性固体を得る。総収率は70 %である。
合成は、200 mLのメタノール中の3.4 g (19 mmol)の酢酸亜鉛二水和物および9.2 g (17 mmol)の配位子から実行される。24時間後、沈殿した固体を冷メタノールで洗浄し、減圧下で乾燥させ、引続いて、保護ガス下にて無水EtOHで再結晶させ、7.5 g (11 mmol)の結晶性固体を得る。総収率は73 % (Tg = 232.8℃、Tm = 354.5℃)である。
本発明による電子発光デバイスは、例えば、WO 05/003253に記載されたように作ることができる。種々のOLEDについての結果をここで比較する。基礎構造、使用される材料、ドーピングの程度およびその層厚は、良好な比較性のために同一にする。発光層中のホストのみを変える。最初のデバイスの例は、発光層がホスト材料B-Alqおよびゲスト材料(ドーパント) Ir(piq)3から構成される、先行技術に関して標準的な比較例を記載する。さらに、ホスト材料であるZn錯体(1)およびゲスト材料(ドーパント)であるIr(piq)3で構成される発光層を持つOLCDが記載される。以下の構造を持つOLCDが、先述した一般的プロセスと同じように作られる:
正孔注入層(HIL)
10 nmの2,2',7,7'-テトラキス (ジ-パラ-トリルアミノ)スピロ-9,9'-ビフルオレン
正孔輸送層(HTL)
30 nmのNPB(N-ナフチル-N-フェニル-4-4'-ジアミノビフェニル)
発光層(EML)
ホスト:比較のためのB-Alq (蒸着、E-Rayから入手し、2回昇華されてさらに精製されたビス(2-メチル-8-キノリノラト-N1,O8)-(1,1'-ビフェニル-4-オラト)アルミニウムから蒸着される)またはCBP (ビス(カルバゾール-9-イル)ビフェニル)、またはZn錯体(1)
ドーパント:Ir(piq)3 (10% ドープ、蒸着、WO 03/0068526に従って合成される)
電子伝導体(ETL)
20 nmのAlQ3 (E-Rayから購入したトリス(キノリノラト)アルミニウム(III))
陰極
上部に1 nmのLiF、150 nmのAl
明確性のために、Ir(piq)3の構造を以下に示す。
Claims (15)
- 有機電子発光デバイスであって、発光層中に少なくとも1つの燐光化合物と、式(I)
Mは出現毎に同一または異なり、Be、Mg、Ca、Sr、Ba、Fe、Ru、Os、Co、Cu、Zn、Cd、Hg、SnおよびPbから選択された+IIの酸化状態にある金属イオンである;
Xは、出現毎に同一または異なる、O、SまたはCO-Oである;
Ar1は、1つ以上の遊離基Rで置換され得る5〜60個の芳香環原子を持つ芳香族またはヘテロ芳香族環系であり、個々の芳香族基は、さらに、1〜10個のC原子を持つアルキレン基を介して互いに接続され得、1つ以上の隣接していないC原子はOまたはSで置換され得る;
Ar2は出現毎に同一または異なり、1つ以上の遊離基Rで置換され得る5〜60個の芳香環原子を持った芳香族またはヘテロ芳香族環系である;
Yは出現毎に同一または異なり、単結合であるか、または、窒素原子と結合されていない1つ以上の隣接していないC原子がOで置き換えられてもよく、1つ以上の遊離基Rで置換され得る1〜10個のC原子を持つアルキレン基である;
Rは出現毎に同一または異なり、H、F、Cl、Br、I、N(R2)2、CN、NO2、Si(R2)3、B(OR2)2、C(=O)R2、P(=O)(R2)2、S(=O)R2、S(=O)2R2、OSO2R2、または各々が1つ以上の遊離基R2で置換され得る1〜40個のC原子を持つ直鎖アルキル、アルコキシもしくはチオアルキル基、3〜40個のC原子を持つ分岐鎖もしくは環状アルキル、アルコキシもしくはチオアルキル基(ここで、1つ以上の隣接していないCH2基はR2C=CR2、C≡C、Si(R2)2、Ge(R2)2、Sn(R2)2、C=O、C=S、C=Se、C=NR2、P(=O)(R2)、SO、SO2、NR2、O、SまたはCONR2に置き換えられてもよく、1つ以上のH原子は、F、Cl、Br、I、CNもしくはNO2、または、1つ以上の遊離基R2で置換され得る5〜60個の芳香環原子を持つ芳香族もしくはヘテロ芳香族環系、または、各々が1つ以上の遊離基R2で置換され得る5〜60個の芳香環原子を持つアリールオキシもしくはヘテロアリールオキシ基で置き換えられてもよい)、またはこれらの系の組合せであり、ここで2つ以上の置換基Rは、互いに単環式もしくは多環式の、脂肪族環系もしくは芳香族環系を形成し得る;
R1は出現毎に同一または異なり、H、F、CF3、各々が1つ以上の遊離基R2で置換され得る1〜40個のC原子を持つ直鎖アルキル基または3〜40個のC原子を持つ分岐鎖もしくは環状アルキル基(ここで、1つ以上の隣接していないCH2基はR2C=CR2、C≡C、Si(R2)2、Ge(R2)2、Sn(R2)2で置き換えられてもよく、1つ以上のH原子は、F、Cl、Br、I、CNもしくはNO2、または、各々が1つ以上の遊離基R2で置換され得る5〜60個の芳香環原子を持つ芳香族もしくはヘテロ芳香族環系で置き換えられてもよい)、またはこれらの系の組合せであり、ここでR1は、1つ以上の置換基Rを有する単環式もしくは多環式の、脂肪族環系もしくは芳香族環系を形成し得る;
R2は出現毎に同一または異なり、H、F、または1〜20個の炭素原子を持つ脂肪族、芳香族もしくはヘテロ芳香環族炭化水素の遊離基であり、さらに、1つ以上のH原子はFで置き換えられてもよく、ここで2つ以上の置換基R2は、互いに単環式もしくは多環式の、脂肪族環系もしくは芳香族環系を形成し得る;
nは出現毎に同一または異なる、0、1または2である)、有機電子発光デバイス。 - 前記記号Yは出現毎に同一または異なり、単結合またはC(R)2基を表すことを特徴とする請求項1記載の有機電子発光デバイス。
- 前記記号Ar2は出現毎に同一または異なり、1つ以上の遊離基Rで置換され得る5〜16個の芳香環原子を持つアリールまたはヘテロアリール基、特に、各々が1つ以上の遊離基Rで置換され得るフェニル、1-もしくは2-ナフチル、4-ビフェニル、1-もしくは2-アントリル、2-もしくは3-チエニル、2-もしくは3-ピロリル、2-もしくは3-フラニル、2-、3-もしくは4-ピリジニル、3-もしくは4-ピリダジニル、4-もしくは5-ピリミジニル、ピラジニル、2-、3-、4-、5-、6-、7-もしくは8-キノリニル、または3-、4-、5-、6-、7-もしくは8-イソキノリニルより選択されるアリールまたはヘテロアリール基を表すことを特徴とする請求項1〜4何れか1項記載の有機電子発光デバイス。
- 前記記号Rは出現毎に同一または異なり、F、N(R2)2、Si(R2)3、C(=O)R2、P(=O)(R2)2、各々が1つ以上の遊離基R2で置換され得る1〜10個のC原子を持つ直鎖アルキル基または3〜10個のC原子を持つ分岐鎖もしくは環状アルキル基(ここで、1つ以上の隣接していないCH2基はR2C=CR2、OまたはSで置き換えられてもよく、1つ以上のH原子は、F、または各々が1つ以上の遊離基R2で置換され得る5〜16個の芳香環原子を持つアリールまたはヘテロアリール基で置き換えられてもよい)、またはこれらの系の組合せを表し、ここで2つ以上の置換基Rは互いに単環式もしくは複環式の、脂肪族環系もしくは芳香族環系を形成することを特徴とする請求項1〜5何れか1項記載の有機電子発光デバイス。
- 前記記号R1は出現毎に同一または異なり、H、1〜6個のC原子を持つ直鎖アルキル基、3〜6個のC原子を持つ分岐鎖もしくは環状アルキル基を表し、各々の場合において、1つ以上のH原子は、F、または各々が1つ以上の遊離基R2で置換され得る5〜16個の芳香族環原子を持つアリールまたはヘテロアリール基で置換され得ることを特徴とする請求項1〜6何れか1項記載の有機電子発光デバイス。
- 前記式(I)の化合物が、固相中で単純な錯体の形態にあるか、またはダイマーもしくはオリゴマーの形態にあることを特徴とする請求項1〜7何れか1項記載の有機電子発光デバイス。
- 前記式(I)の化合物において、全ての記号Ar2が同一であり、全ての記号Xが同一であり、全ての記号R1が同一であり、全ての記号Yが同一あり、かつ、前記化合物が等しく置換されることを特徴とする請求項1〜8何れか1項記載の有機電子発光デバイス。
- 陰極、陽極および少なくとも1つの発光層を含み、任意で正孔注入層、正孔輸送層、電子遮断層、正孔遮断層、電子輸送層、電子注入層、電荷発生層から選択されるさらなる層、および有機もしくは無機のp/n接合を含むことを特徴とする請求項1〜9何れか1項記載の有機電子発光デバイス。
- 前記有機電子発光デバイスが、少なくとも1つの層が前記式(I)の少なくとも1つの化合物および少なくとも1つの燐光化合物を含む複数の発光層を含むことを特徴とする請求項1〜10何れか1項記載の有機電子発光デバイス。
- 前記燐光化合物が、銅、モリブデン、タングステン、レニウム、ルテニウム、オスミウム、ロジウム、イリジウム、パラジウム、白金、銀、金またはユーロピウムを含有する請求項1〜11何れか1項記載の有機電子発光デバイス。
- 前記燐光化合物が、式(XXII)〜(XXV)
DCyは出現毎に同一または異なり、少なくとも1つのドナー原子、好ましくは窒素、カルベンの形態にある炭素、またはリンを含む環状基であり、前記環状基はドナー原子を介して金属と結合され、かつ、1つ以上の置換基Rを持ち得、前記基DCyおよびCCyは共有結合を介して互いに接続される;
CCyは出現毎に同一または異なり、炭素原子を含む基であり、前記環状基は炭素原子を介して金属と結合され、かつ、1つ以上の置換基Rも持ち得る環状基である;
Aは出現毎に同一または異なり、モノアニオン性の二座キレート配位子、好ましくはジケトナート配位子である)、請求項12記載の有機電子発光デバイス。 - 1つ以上の層が、昇華プロセスによって、もしくはOVPD (有機気相蒸着)プロセスによって、もしくはOVJP (有機蒸気ジェット印刷)プロセスによって、もしくはキャリアガス補助昇華によって適用されるか、または、スピンコーティングによって、もしくは印刷プロセスによって溶液から作られることを特徴とする請求項1〜13何れか1項記載の有機電子発光デバイスを製造するためのプロセス。
- 有機電子発光デバイスにおける燐光化合物のためのマトリクス材料としての、請求項1〜9何れか1項記載の前記式(I)の化合物の使用。
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PCT/EP2008/008684 WO2009062578A1 (de) | 2007-11-12 | 2008-10-14 | Organische elektrolumineszenzvorrichtungen enthaltend azomethin-metall-komplexe |
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-
2007
- 2007-11-12 DE DE102007053771A patent/DE102007053771A1/de not_active Withdrawn
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- 2008-10-14 JP JP2010533453A patent/JP5591710B2/ja not_active Expired - Fee Related
- 2008-10-14 EP EP08802877A patent/EP2207864A1/de not_active Withdrawn
- 2008-10-14 CN CN200880115344.XA patent/CN101878279B/zh not_active Expired - Fee Related
- 2008-10-14 US US12/742,549 patent/US8487300B2/en not_active Expired - Fee Related
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KR101571178B1 (ko) | 2015-11-23 |
US20100244009A1 (en) | 2010-09-30 |
WO2009062578A1 (de) | 2009-05-22 |
KR20100096162A (ko) | 2010-09-01 |
DE102007053771A1 (de) | 2009-05-14 |
JP2011503886A (ja) | 2011-01-27 |
CN101878279A (zh) | 2010-11-03 |
CN101878279B (zh) | 2016-05-11 |
EP2207864A1 (de) | 2010-07-21 |
US8487300B2 (en) | 2013-07-16 |
TW200946635A (en) | 2009-11-16 |
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